KR970017960A - 대 표면 영역 실리콘 기판 - Google Patents
대 표면 영역 실리콘 기판 Download PDFInfo
- Publication number
- KR970017960A KR970017960A KR1019960039123A KR19960039123A KR970017960A KR 970017960 A KR970017960 A KR 970017960A KR 1019960039123 A KR1019960039123 A KR 1019960039123A KR 19960039123 A KR19960039123 A KR 19960039123A KR 970017960 A KR970017960 A KR 970017960A
- Authority
- KR
- South Korea
- Prior art keywords
- substrate
- gas
- silicon
- plasma
- deposited
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims abstract 19
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract 13
- 229910052710 silicon Inorganic materials 0.000 title claims abstract 13
- 239000010703 silicon Substances 0.000 title claims abstract 13
- 238000000034 method Methods 0.000 claims abstract description 14
- 239000007789 gas Substances 0.000 claims abstract 16
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract 3
- 239000001301 oxygen Substances 0.000 claims abstract 3
- 229910052760 oxygen Inorganic materials 0.000 claims abstract 3
- 239000000463 material Substances 0.000 claims 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 4
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 claims 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 2
- 229910003902 SiCl 4 Inorganic materials 0.000 claims 2
- 229910052786 argon Inorganic materials 0.000 claims 2
- 238000000151 deposition Methods 0.000 claims 2
- 239000001257 hydrogen Substances 0.000 claims 2
- 229910052739 hydrogen Inorganic materials 0.000 claims 2
- 229910052757 nitrogen Inorganic materials 0.000 claims 2
- 239000005049 silicon tetrachloride Substances 0.000 claims 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 claims 1
- 229910000077 silane Inorganic materials 0.000 claims 1
- 230000008021 deposition Effects 0.000 abstract 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 239000007788 liquid Substances 0.000 abstract 1
- 230000000873 masking effect Effects 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45519—Inert gas curtains
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/24—Deposition of silicon only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/513—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using plasma jets
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Plasma & Fusion (AREA)
- Electromagnetism (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Silicon Compounds (AREA)
- Photovoltaic Devices (AREA)
- Plasma Technology (AREA)
Abstract
본 발명은 피착 영역을 한정하기 위하여 기판(31)을 마스킹하므로써 실리콘 기판을 생산하는 방법에 관한 것이다. 실리콘은 피착 영역에 가스의 형태로 피착된다(33). 이러한 피착은 실리카가 형성되지 않도록 산소를 포함하고 있지 않은 가스 또는 액체(32)하에서 기판에 대한 플라즈마 피착에 의해 실행된다.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제5도는 본 발명의 방법의 공정을 보여주는 다이어그램.
Claims (11)
- 플라즈마 리액터내에서 실리콘 기판을 생산하는 방법에 있어서, 피착 영역을 한정하기 위하여 피착 기판위에 마스크를 위치시키는 단계; 상기 기판에 플라즈마를 제공하는 단계; 상기 기판을 산소 불함유 가스로 막을 치는 단계; 실리콘 함유 재료를 상기 플라즈마내로 주입시켜 상기 기판에 실리콘을 피착하는 단계를 포함하는 실리콘 기판 생산 방법.
- 제1항에 있어서, 실리콘은 상기 가스막을 통해서 상기 기판에 피착되는 실리콘 기판 생산 방법.
- 제2항에 있어서, 상기 실리콘 함유 재료로는 실린 가스(SiH4) 및 실리콘 테트라크로라이드(SiCl4)중에서 하나가 선택되는 실리콘 기판 생산 방법.
- 제1항에 있어서, 상기 가스막은 적어도 아르곤 및 질소 중에서 하나이며 수소는 선택적으로 이차 가스가 되는 실리콘 기판 생산 방법.
- 제1항에 있어서, 솔라 셀을 형성하기 위해서 적어도 하나의 부가적인 재료층을 피착하는 단계를 포함하는 실리콘 기판 생산 방법.
- 플라즈마 반응기내에서 실리콘 기판을 생산하는 방법에 있어서, 피착 영역을 한정하기 위해서 피착 기판위에 마스크를 배치하는 단계; 상기 기판에 플라즈마를 제공하는 단계; 상기 기판을 산소 불함유 가스로 막을 치는 단계; 상기 플라즈마내로 실리콘 함유 가스 재료를 주입시켜 실리콘을 상기 기판에 피착하는 단계를 포함하는 실리콘 기판 생산 방법.
- 제6항에 있어서, 상기 실리콘은 상기 가스막을 통해서 상기 기판에 제공되는 실리콘 기판 생산 방법.
- 제6항에 있어서, 상기 실리콘 함유 가스로는 실란 가스(SiH4) 및 실리콘 테트라크로라이드 가스(SiCl4)중에서 하나가 선택되는 실리콘 기판 생산 방법.
- 제6항에 있어서, 상기 가스막은 적어도 아르곤 및 질소중에서 하나이고 수소는 선택적으로 이차 가스가 되는 실리콘 기판 생산 방법.
- 제6항에 있어서, 솔라 셀을 형성하기 위해서 적어도 하나의 부가적인 재료층을 피착하는 단계를 포함하는 실리콘 기판 생산 방법.
- 재료를 기판에 피착하는데 이용되는 플라즈마 반응기에 있어서, 플라즈마 반응기내에 플라즈마를 형성하기 위한 애노드 및 캐소드; 상기 애노드 및 캐소드와 협력하여 플라즈마를 형성하기 위한 가스를 주입시키기 위한 제1입구; 및 상기 기판상에 피착될 재료를 플라즈마내로 주입하기 위한 제2입구; 및 상기 기판에 막을 치기 위한 가스를 주입하기 위한 제3입구를 포함하는 플라즈마 반응기.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US356895P | 1995-09-11 | 1995-09-11 | |
| US60/003,568 | 1995-09-11 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR970017960A true KR970017960A (ko) | 1997-04-30 |
Family
ID=21706487
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019960039123A KR970017960A (ko) | 1995-09-11 | 1996-09-10 | 대 표면 영역 실리콘 기판 |
Country Status (3)
| Country | Link |
|---|---|
| EP (1) | EP0762518A3 (ko) |
| JP (1) | JPH09142991A (ko) |
| KR (1) | KR970017960A (ko) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100476152B1 (ko) * | 1996-11-08 | 2005-05-16 | 어플라이드 머티어리얼스, 인코포레이티드 | 깊은uv포토레지스트막을증착하기위한방법및장치 |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19807086A1 (de) * | 1998-02-20 | 1999-08-26 | Fraunhofer Ges Forschung | Verfahren zum Beschichten von Oberflächen eines Substrates, Vorrichtung zur Durchführung des Verfahrens, Schichtsystem sowie beschichtetes Substrat |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3016807A1 (de) * | 1980-05-02 | 1981-11-05 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Verfahren zur herstellung von silizium |
| JP2840699B2 (ja) * | 1990-12-12 | 1998-12-24 | 株式会社 半導体エネルギー研究所 | 被膜形成装置及び被膜形成方法 |
| US5264376A (en) * | 1991-06-24 | 1993-11-23 | Texas Instruments Incorporated | Method of making a thin film solar cell |
| KR960000190B1 (ko) * | 1992-11-09 | 1996-01-03 | 엘지전자주식회사 | 반도체 제조방법 및 그 장치 |
-
1996
- 1996-09-10 KR KR1019960039123A patent/KR970017960A/ko not_active Application Discontinuation
- 1996-09-11 EP EP96306593A patent/EP0762518A3/en not_active Withdrawn
- 1996-09-11 JP JP8240759A patent/JPH09142991A/ja active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100476152B1 (ko) * | 1996-11-08 | 2005-05-16 | 어플라이드 머티어리얼스, 인코포레이티드 | 깊은uv포토레지스트막을증착하기위한방법및장치 |
Also Published As
| Publication number | Publication date |
|---|---|
| EP0762518A2 (en) | 1997-03-12 |
| EP0762518A3 (en) | 1999-10-13 |
| JPH09142991A (ja) | 1997-06-03 |
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| Date | Code | Title | Description |
|---|---|---|---|
| WITN | Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid |