KR890008619A - 전자사진 수광소자의 제조방법 - Google Patents

전자사진 수광소자의 제조방법 Download PDF

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Publication number
KR890008619A
KR890008619A KR1019880014688A KR880014688A KR890008619A KR 890008619 A KR890008619 A KR 890008619A KR 1019880014688 A KR1019880014688 A KR 1019880014688A KR 880014688 A KR880014688 A KR 880014688A KR 890008619 A KR890008619 A KR 890008619A
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KR
South Korea
Prior art keywords
manufacturing
light receiving
electrophotographic light
main component
receiving device
Prior art date
Application number
KR1019880014688A
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English (en)
Other versions
KR0156562B1 (ko
Inventor
유즈루 후꾸다
마사유끼 니시까와
시게루 야기
겐-이찌 카라끼다
Original Assignee
고바야시요따로
후지 제록스 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP62282236A external-priority patent/JP2595575B2/ja
Priority claimed from JP63049608A external-priority patent/JP2720448B2/ja
Application filed by 고바야시요따로, 후지 제록스 가부시끼가이샤 filed Critical 고바야시요따로
Publication of KR890008619A publication Critical patent/KR890008619A/ko
Application granted granted Critical
Publication of KR0156562B1 publication Critical patent/KR0156562B1/ko

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G7/00—Selection of materials for use in image-receiving members, i.e. for reversal by physical contact; Manufacture thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/043—Photoconductive layers characterised by having two or more layers or characterised by their composite structure
    • G03G5/0433—Photoconductive layers characterised by having two or more layers or characterised by their composite structure all layers being inorganic
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/081—Oxides of aluminium, magnesium or beryllium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Photoreceptors In Electrophotography (AREA)

Abstract

내용 없음

Description

전자사진 수광소자의 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음

Claims (10)

  1. 산소 가스를 도입시키면서 이온 도금하여 전하 운반층을 형성시켜, 주성분으로서 무정형 실리콘을 함유하는 전하 발생층 및 주성분으로서 산화 알루미늄을 함유하는 전하 운반층을 갖는 기판을 포함하는 전자사진 수광소자를 제조하는 방법.
  2. 제1항에 있어서, 기판상에 주성분으로서 무정형 실리콘을 함유하는 전하 발생층을 형성시킨 후에 그위에 주성분으로서 산화 알루미늄을 함유하는 전하 운반층을 형성시켜 전자사진 수광소자를 제조하는 방법.
  3. 제1항에 있어서, 기판상에 주성분으로서 산화 알루미늄을 함유하는 전하 운반층을 형성시킨 후에 그 위에 주성분으로서 무정형 실리콘을 함유하는 전하 발생층을 형성시켜 전자사진 수광소자를 제조하는 방법.
  4. 제1항에 있어서, 전하 운반층에 함유되는 원재료가 Al2O3인 전자사진 수광소자의 제조방법.
  5. 제1항에 있어서, 전하 운반층에 함유되는 원재료가 알루미늄인 전자사진 수광소자의 제조방법.
  6. 제1항에 있어서, 플라즈마 CVD법에 의해 실란 또는 실란계 가스를 글로우-방전시켜 전하 발생층을 형성시킴을 특징으로 하는 전자사진 수광소자의 제조방법.
  7. 제1항에 있어서, 전하 발생층이 주성분으로서 무정형 실리콘을 함유하며 1 내지 40원자%의 수소를 추가로 함유함을 특징으로 하는 전자사진 수광소자의 제조방법.
  8. 제1항에 있어서, 전하 발생층이 두께가 0.1 내지 30㎛인 전자사진 수광소자의 제조방법.
  9. 제1항에 있어서, 산소 가스를 1×10-6내지 1×10-2torr의 진공도로 도입시킴을 특징으로 하는 전자사진 수광소자의 제조방법.
  10. 제1항에 있어서, 전하 운반층을 두께가 2 내지 100㎛인 전자사진 수광소자의 제조방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019880014688A 1987-11-10 1988-11-09 전자사진 감광체의 제조방법 KR0156562B1 (ko)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP282236/87 1987-11-10
JP62-282236 1987-11-10
JP62282236A JP2595575B2 (ja) 1987-11-10 1987-11-10 電子写真感光体の製造方法
JP63049608A JP2720448B2 (ja) 1988-03-04 1988-03-04 電子写真感光体の製造方法
JP49608/88 1988-03-04
JP63-49608 1988-03-04

Publications (2)

Publication Number Publication Date
KR890008619A true KR890008619A (ko) 1989-07-12
KR0156562B1 KR0156562B1 (ko) 1998-11-16

Family

ID=26390024

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019880014688A KR0156562B1 (ko) 1987-11-10 1988-11-09 전자사진 감광체의 제조방법

Country Status (4)

Country Link
US (1) US5082760A (ko)
KR (1) KR0156562B1 (ko)
DE (1) DE3838165A1 (ko)
GB (1) GB2212289B (ko)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0810332B2 (ja) * 1988-02-10 1996-01-31 富士ゼロックス株式会社 電子写真感光体の製造方法
US11486042B2 (en) 2018-01-18 2022-11-01 Viavi Solutions Inc. Silicon coating on hard shields

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2746967C2 (de) * 1977-10-19 1981-09-24 Siemens AG, 1000 Berlin und 8000 München Elektrofotographische Aufzeichnungstrommel
AU530905B2 (en) * 1977-12-22 1983-08-04 Canon Kabushiki Kaisha Electrophotographic photosensitive member
JPS6035059B2 (ja) * 1977-12-22 1985-08-12 キヤノン株式会社 電子写真感光体およびその製造方法
US4361638A (en) * 1979-10-30 1982-11-30 Fuji Photo Film Co., Ltd. Electrophotographic element with alpha -Si and C material doped with H and F and process for producing the same
US4369242A (en) * 1980-09-25 1983-01-18 Minnesota Mining And Manufacturing Company Non-porous and porous Al2 O3 barrier zones in layered electrophotographic device
JPS596540A (ja) * 1982-07-05 1984-01-13 Toshiba Corp 半導体装置の製造方法
JPS5990821A (ja) * 1982-11-16 1984-05-25 Canon Inc エレクトロクロミツク素子
JPS6166216A (ja) * 1984-09-07 1986-04-05 Hitachi Ltd 磁気ヘツド
US4634648A (en) * 1985-07-05 1987-01-06 Xerox Corporation Electrophotographic imaging members with amorphous carbon
US4737429A (en) * 1986-06-26 1988-04-12 Xerox Corporation Layered amorphous silicon imaging members
JPH0782240B2 (ja) * 1986-09-04 1995-09-06 富士ゼロックス株式会社 電子写真感光体
JPH0810332B2 (ja) * 1988-02-10 1996-01-31 富士ゼロックス株式会社 電子写真感光体の製造方法

Also Published As

Publication number Publication date
DE3838165A1 (de) 1989-05-24
GB2212289B (en) 1991-10-09
DE3838165C2 (ko) 1993-01-07
GB2212289A (en) 1989-07-19
GB8826096D0 (en) 1988-12-14
US5082760A (en) 1992-01-21
KR0156562B1 (ko) 1998-11-16

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