ZA200404372B - Coloured diamond. - Google Patents
Coloured diamond. Download PDFInfo
- Publication number
- ZA200404372B ZA200404372B ZA200404372A ZA200404372A ZA200404372B ZA 200404372 B ZA200404372 B ZA 200404372B ZA 200404372 A ZA200404372 A ZA 200404372A ZA 200404372 A ZA200404372 A ZA 200404372A ZA 200404372 B ZA200404372 B ZA 200404372B
- Authority
- ZA
- South Africa
- Prior art keywords
- diamond
- colour
- layer according
- diamond layer
- spectrum
- Prior art date
Links
- 239000010432 diamond Substances 0.000 title claims description 210
- 229910003460 diamond Inorganic materials 0.000 title claims description 199
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 88
- 239000007789 gas Substances 0.000 claims description 59
- 239000000758 substrate Substances 0.000 claims description 55
- 238000010521 absorption reaction Methods 0.000 claims description 53
- 230000007547 defect Effects 0.000 claims description 50
- 238000000034 method Methods 0.000 claims description 43
- 229910052757 nitrogen Inorganic materials 0.000 claims description 41
- 238000000862 absorption spectrum Methods 0.000 claims description 40
- 238000001228 spectrum Methods 0.000 claims description 38
- 238000004020 luminiscence type Methods 0.000 claims description 35
- 239000013078 crystal Substances 0.000 claims description 34
- 239000010437 gem Substances 0.000 claims description 21
- 229910001751 gemstone Inorganic materials 0.000 claims description 21
- 230000015572 biosynthetic process Effects 0.000 claims description 19
- 238000003786 synthesis reaction Methods 0.000 claims description 14
- 239000012535 impurity Substances 0.000 claims description 12
- 238000001748 luminescence spectrum Methods 0.000 claims description 5
- 230000000630 rising effect Effects 0.000 claims description 5
- 230000005284 excitation Effects 0.000 claims description 2
- 239000003086 colorant Substances 0.000 description 16
- 229910052739 hydrogen Inorganic materials 0.000 description 14
- 239000000463 material Substances 0.000 description 14
- 230000008569 process Effects 0.000 description 14
- 230000003595 spectral effect Effects 0.000 description 13
- 239000001257 hydrogen Substances 0.000 description 11
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 10
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 10
- 238000004817 gas chromatography Methods 0.000 description 10
- 230000003287 optical effect Effects 0.000 description 10
- 229910052760 oxygen Inorganic materials 0.000 description 10
- 239000001301 oxygen Substances 0.000 description 10
- 230000007935 neutral effect Effects 0.000 description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 7
- 239000000203 mixture Substances 0.000 description 7
- 238000001069 Raman spectroscopy Methods 0.000 description 6
- 230000001419 dependent effect Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 238000005259 measurement Methods 0.000 description 6
- 238000005498 polishing Methods 0.000 description 6
- 239000004575 stone Substances 0.000 description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 5
- 238000007792 addition Methods 0.000 description 5
- 229910052799 carbon Inorganic materials 0.000 description 5
- 238000011065 in-situ storage Methods 0.000 description 5
- 238000002360 preparation method Methods 0.000 description 5
- 238000012545 processing Methods 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 4
- 238000005286 illumination Methods 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 238000005316 response function Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 238000011282 treatment Methods 0.000 description 4
- 241000723347 Cinnamomum Species 0.000 description 3
- 238000000137 annealing Methods 0.000 description 3
- 239000012159 carrier gas Substances 0.000 description 3
- 235000017803 cinnamon Nutrition 0.000 description 3
- 239000000356 contaminant Substances 0.000 description 3
- 238000000354 decomposition reaction Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 238000010494 dissociation reaction Methods 0.000 description 3
- 230000005593 dissociations Effects 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 229910052736 halogen Inorganic materials 0.000 description 3
- 150000002367 halogens Chemical class 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 230000000155 isotopic effect Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000004044 response Effects 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- 238000000411 transmission spectrum Methods 0.000 description 3
- 229910052774 Proactinium Inorganic materials 0.000 description 2
- 238000004854 X-ray topography Methods 0.000 description 2
- 238000004847 absorption spectroscopy Methods 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000005441 aurora Substances 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 235000019646 color tone Nutrition 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 125000004433 nitrogen atom Chemical group N* 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 241000894007 species Species 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 238000002371 ultraviolet--visible spectrum Methods 0.000 description 2
- 230000000007 visual effect Effects 0.000 description 2
- 239000002699 waste material Substances 0.000 description 2
- WKBPZYKAUNRMKP-UHFFFAOYSA-N 1-[2-(2,4-dichlorophenyl)pentyl]1,2,4-triazole Chemical compound C=1C=C(Cl)C=C(Cl)C=1C(CCC)CN1C=NC=N1 WKBPZYKAUNRMKP-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 241001070941 Castanea Species 0.000 description 1
- 235000014036 Castanea Nutrition 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- YZCKVEUIGOORGS-OUBTZVSYSA-N Deuterium Chemical compound [2H] YZCKVEUIGOORGS-OUBTZVSYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 238000001237 Raman spectrum Methods 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- YZCKVEUIGOORGS-NJFSPNSNSA-N Tritium Chemical compound [3H] YZCKVEUIGOORGS-NJFSPNSNSA-N 0.000 description 1
- 238000002835 absorbance Methods 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000003466 anti-cipated effect Effects 0.000 description 1
- -1 argon ion Chemical class 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000012993 chemical processing Methods 0.000 description 1
- 235000020057 cognac Nutrition 0.000 description 1
- 238000004737 colorimetric analysis Methods 0.000 description 1
- 230000002860 competitive effect Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000012790 confirmation Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000009795 derivation Methods 0.000 description 1
- 229910052805 deuterium Inorganic materials 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000001362 electron spin resonance spectrum Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 210000000887 face Anatomy 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000004442 gravimetric analysis Methods 0.000 description 1
- 150000008282 halocarbons Chemical class 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 238000007373 indentation Methods 0.000 description 1
- 229910001872 inorganic gas Inorganic materials 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000002808 molecular sieve Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000004660 morphological change Effects 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 238000005424 photoluminescence Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 238000011002 quantification Methods 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- URGAHOPLAPQHLN-UHFFFAOYSA-N sodium aluminosilicate Chemical compound [Na+].[Al+3].[O-][Si]([O-])=O.[O-][Si]([O-])=O URGAHOPLAPQHLN-UHFFFAOYSA-N 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 229920002994 synthetic fiber Polymers 0.000 description 1
- 239000011031 topaz Substances 0.000 description 1
- 229910052853 topaz Inorganic materials 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 229910052722 tritium Inorganic materials 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
- 238000001429 visible spectrum Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/10—Heating of the reaction chamber or the substrate
- C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/10—Heating of the reaction chamber or the substrate
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/25—Diamond
- C01B32/28—After-treatment, e.g. purification, irradiation, separation or recovery
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/04—Diamond
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/30—Self-sustaining carbon mass or layer with impregnant or other layer
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Geology (AREA)
- General Life Sciences & Earth Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
- Diaphragms For Electromechanical Transducers (AREA)
- Polishing Bodies And Polishing Tools (AREA)
- Carbon And Carbon Compounds (AREA)
- Adornments (AREA)
- Telescopes (AREA)
- Local Oxidation Of Silicon (AREA)
- Luminescent Compositions (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB0130004A GB0130004D0 (en) | 2001-12-14 | 2001-12-14 | Coloured diamond |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ZA200404372B true ZA200404372B (en) | 2005-06-03 |
Family
ID=9927670
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| ZA200404372A ZA200404372B (en) | 2001-12-14 | 2004-06-03 | Coloured diamond. |
Country Status (16)
| Country | Link |
|---|---|
| US (3) | US20040194690A1 (de) |
| EP (2) | EP1466041B1 (de) |
| JP (1) | JP4344244B2 (de) |
| KR (1) | KR100979002B1 (de) |
| CN (1) | CN1322178C (de) |
| AT (1) | ATE489489T1 (de) |
| AU (1) | AU2002358226B2 (de) |
| CA (1) | CA2469789C (de) |
| DE (1) | DE60238442D1 (de) |
| GB (2) | GB0130004D0 (de) |
| HK (1) | HK1076643A1 (de) |
| IL (2) | IL162356A0 (de) |
| RU (1) | RU2314368C2 (de) |
| TW (1) | TWI233426B (de) |
| WO (1) | WO2003052177A1 (de) |
| ZA (1) | ZA200404372B (de) |
Families Citing this family (43)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CA2412853C (en) * | 2000-06-15 | 2009-08-25 | Geoffrey Alan Scarsbrook | Single crystal diamond prepared by cvd |
| EP1290251B8 (de) * | 2000-06-15 | 2006-02-01 | Element Six (PTY) Ltd | Dicke einkristalline diamantschicht, verfahren zur herstellung der schicht und edelsteine hergestellt durch bearbeitung der schicht |
| GB0130005D0 (en) * | 2001-12-14 | 2002-02-06 | Diamanx Products Ltd | Boron doped diamond |
| GB0130004D0 (en) * | 2001-12-14 | 2002-02-06 | Diamanx Products Ltd | Coloured diamond |
| JP4711677B2 (ja) * | 2002-09-06 | 2011-06-29 | エレメント シックス リミテッド | 着色されたダイヤモンド |
| GB0221949D0 (en) * | 2002-09-20 | 2002-10-30 | Diamanx Products Ltd | Single crystal diamond |
| GB2433738B (en) * | 2002-11-21 | 2007-08-15 | Element Six Ltd | Optical Quality Diamond Material |
| GB0227261D0 (en) * | 2002-11-21 | 2002-12-31 | Element Six Ltd | Optical quality diamond material |
| KR101240785B1 (ko) | 2003-12-12 | 2013-03-07 | 엘리멘트 식스 리미티드 | 화학적 증착 다이아몬드에 마크를 통합시키는 방법 |
| JP4525897B2 (ja) * | 2004-03-22 | 2010-08-18 | 住友電気工業株式会社 | ダイヤモンド単結晶基板 |
| JP4697514B2 (ja) * | 2004-01-16 | 2011-06-08 | 住友電気工業株式会社 | ダイヤモンド単結晶基板の製造方法およびダイヤモンド単結晶基板 |
| JP5002982B2 (ja) * | 2005-04-15 | 2012-08-15 | 住友電気工業株式会社 | 単結晶ダイヤモンドの製造方法 |
| GB0512728D0 (en) * | 2005-06-22 | 2005-07-27 | Element Six Ltd | High colour diamond |
| CA2607202C (en) | 2005-06-22 | 2014-06-03 | Element Six Limited | High colour diamond layer |
| EP1957689B1 (de) | 2005-12-09 | 2011-04-20 | Element Six Technologies (PTY) LTD | Synthetischer diamant mit hoher kristalliner qualität |
| JP5284575B2 (ja) * | 2006-10-31 | 2013-09-11 | 住友電気工業株式会社 | ダイヤモンド単結晶及びその製造方法 |
| JP4803464B2 (ja) * | 2008-07-04 | 2011-10-26 | 独立行政法人産業技術総合研究所 | 単結晶ダイヤモンドの表面損傷の除去方法 |
| GB0813491D0 (en) | 2008-07-23 | 2008-08-27 | Element Six Ltd | Diamond Material |
| GB0813490D0 (en) | 2008-07-23 | 2008-08-27 | Element Six Ltd | Solid state material |
| SG176933A1 (en) | 2009-06-26 | 2012-01-30 | Element Six Ltd | Method for making fancy pale blue or fancy pale blue /green single crystal cvd diamond and product obtained |
| US9017632B2 (en) | 2009-06-26 | 2015-04-28 | Element Six Technologies Limited | Diamond material |
| US9157170B2 (en) | 2009-12-21 | 2015-10-13 | Element Six Technologies Limited | Single crystal diamond material |
| US10273598B2 (en) | 2009-12-22 | 2019-04-30 | Element Six Technologies Limited | Synthetic CVD diamond |
| GB2476478A (en) * | 2009-12-22 | 2011-06-29 | Element Six Ltd | Chemical vapour deposition diamond synthesis |
| WO2012019112A2 (en) * | 2010-08-05 | 2012-02-09 | University Of Houston System | Method of producing diamond powder and doped diamonds |
| US9277792B2 (en) * | 2010-08-24 | 2016-03-08 | Board Of Trustees Of Michigan State University | Multicolored single crystal diamond gemstones and methods for forming the same |
| GB201021985D0 (en) * | 2010-12-24 | 2011-02-02 | Element Six Ltd | Dislocation engineering in single crystal synthetic diamond material |
| GB201121642D0 (en) * | 2011-12-16 | 2012-01-25 | Element Six Ltd | Single crtstal cvd synthetic diamond material |
| US9359213B2 (en) * | 2012-06-11 | 2016-06-07 | The Board Of Regents Of The Nevada System Of Higher Education On Behalf Of The University Of Nevada, Las Vegas | Plasma treatment to strengthen diamonds |
| US9441312B2 (en) | 2012-06-29 | 2016-09-13 | Sumitomo Electric Industries, Ltd. | Diamond single crystal, method for producing the same, and single crystal diamond tool |
| GB201216697D0 (en) * | 2012-09-19 | 2012-10-31 | Element Six Ltd | Single crystal chemical vapour deposited synthetic diamond materials having uniform colour |
| CN105026926A (zh) * | 2013-03-04 | 2015-11-04 | 株式会社岛津制作所 | 色谱数据处理装置以及处理方法 |
| WO2015199180A1 (ja) | 2014-06-25 | 2015-12-30 | 住友電気工業株式会社 | ダイヤモンド基板の製造方法、ダイヤモンド基板、及び、ダイヤモンド複合基板 |
| JP6594889B2 (ja) * | 2014-10-29 | 2019-10-23 | 住友電気工業株式会社 | 単結晶ダイヤモンド材料、ならびにそれを含む工具、放射温度モニター、および赤外光学部品 |
| GB201516814D0 (en) | 2015-09-23 | 2015-11-04 | Element Six Technologies Ltd | Method of fabricating a plurality of single crystal CVD synthetic diamonds |
| GB201620415D0 (en) * | 2016-12-01 | 2017-01-18 | Element Six Tech Ltd | Single crystal synthetic diamond material via chemical vapour deposition |
| GB201620413D0 (en) | 2016-12-01 | 2017-01-18 | Element Six Tech Ltd | Single crystal synthetic diamond material via chemical vapour deposition |
| GB201811162D0 (en) | 2018-07-06 | 2018-08-29 | Element Six Tech Ltd | Method of manufacture of single crystal synthetic diamond material |
| GB201904435D0 (en) * | 2019-03-29 | 2019-05-15 | Element Six Tech Ltd | Single crystal synthetic diamond material |
| CN110219043A (zh) * | 2019-05-23 | 2019-09-10 | 宁波晶钻工业科技有限公司 | 一种多色单晶金刚石生长方法 |
| US11802053B2 (en) | 2021-06-10 | 2023-10-31 | Daniel Hodes | Method and apparatus for the fabrication of diamond by shockwaves |
| GB2614522B (en) | 2021-10-19 | 2024-04-03 | Element Six Tech Ltd | CVD single crystal diamond |
| GB2614521A (en) | 2021-10-19 | 2023-07-12 | Element Six Tech Ltd | CVD single crystal diamond |
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| DE3322304A1 (de) * | 1983-06-21 | 1985-01-03 | Siemens AG, 1000 Berlin und 8000 München | Streifenleitungsdopplerradar |
| KR900008505B1 (ko) * | 1987-02-24 | 1990-11-24 | 세미콘덕터 에너지 라보라터리 캄파니 리미티드 | 탄소 석출을 위한 마이크로파 강화 cvd 방법 |
| US5284709A (en) * | 1987-03-30 | 1994-02-08 | Crystallume | Diamond materials with enhanced heat conductivity |
| JP2571795B2 (ja) | 1987-11-17 | 1997-01-16 | 住友電気工業株式会社 | 紫色ダイヤモンドおよびその製造方法 |
| JP2571808B2 (ja) * | 1988-01-13 | 1997-01-16 | 住友電気工業株式会社 | 緑色ダイヤモンド及びその製造方法 |
| EP0326856A1 (de) | 1988-01-28 | 1989-08-09 | Siemens Aktiengesellschaft | Elektronischer Impulszähler |
| GB8810111D0 (en) * | 1988-04-28 | 1988-06-02 | Jones B L | Diamond growth |
| JP2730144B2 (ja) * | 1989-03-07 | 1998-03-25 | 住友電気工業株式会社 | 単結晶ダイヤモンド層形成法 |
| US6162412A (en) * | 1990-08-03 | 2000-12-19 | Sumitomo Electric Industries, Ltd. | Chemical vapor deposition method of high quality diamond |
| JP2940099B2 (ja) | 1990-08-09 | 1999-08-25 | 住友電気工業株式会社 | 高熱伝導性ダイヤモンド単結晶の合成方法 |
| US5474021A (en) | 1992-09-24 | 1995-12-12 | Sumitomo Electric Industries, Ltd. | Epitaxial growth of diamond from vapor phase |
| JPH06107494A (ja) | 1992-09-24 | 1994-04-19 | Sumitomo Electric Ind Ltd | ダイヤモンドの気相成長法 |
| JP3314444B2 (ja) * | 1993-03-15 | 2002-08-12 | 住友電気工業株式会社 | 赤色ダイヤモンドおよび桃色ダイヤモンド |
| JP3484749B2 (ja) * | 1994-04-04 | 2004-01-06 | 住友電気工業株式会社 | ダイヤモンドの合成法 |
| CN1123847A (zh) * | 1994-11-29 | 1996-06-05 | 中国科学院物理研究所 | 一种热丝法生长金刚石的方法 |
| JP4291886B2 (ja) * | 1994-12-05 | 2009-07-08 | 住友電気工業株式会社 | 低欠陥ダイヤモンド単結晶及びその合成方法 |
| US5628824A (en) * | 1995-03-16 | 1997-05-13 | The University Of Alabama At Birmingham Research Foundation | High growth rate homoepitaxial diamond film deposition at high temperatures by microwave plasma-assisted chemical vapor deposition |
| JP4032482B2 (ja) | 1997-04-18 | 2008-01-16 | 住友電気工業株式会社 | 単結晶ダイヤモンドの製造方法 |
| US6582513B1 (en) * | 1998-05-15 | 2003-06-24 | Apollo Diamond, Inc. | System and method for producing synthetic diamond |
| GB0007887D0 (en) * | 2000-03-31 | 2000-05-17 | De Beers Ind Diamond | Colour change of diamond |
| AU779501B2 (en) | 2000-03-31 | 2005-01-27 | Element Six Technologies (Pty) Ltd | High temperature/high pressure colour change of diamond |
| EP1290251B8 (de) * | 2000-06-15 | 2006-02-01 | Element Six (PTY) Ltd | Dicke einkristalline diamantschicht, verfahren zur herstellung der schicht und edelsteine hergestellt durch bearbeitung der schicht |
| CA2412853C (en) * | 2000-06-15 | 2009-08-25 | Geoffrey Alan Scarsbrook | Single crystal diamond prepared by cvd |
| GB0130004D0 (en) * | 2001-12-14 | 2002-02-06 | Diamanx Products Ltd | Coloured diamond |
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| GB0221949D0 (en) * | 2002-09-20 | 2002-10-30 | Diamanx Products Ltd | Single crystal diamond |
| GB0227261D0 (en) * | 2002-11-21 | 2002-12-31 | Element Six Ltd | Optical quality diamond material |
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2001
- 2001-12-14 GB GB0130004A patent/GB0130004D0/en not_active Ceased
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2002
- 2002-12-13 CN CNB028268318A patent/CN1322178C/zh not_active Expired - Lifetime
- 2002-12-13 WO PCT/IB2002/005332 patent/WO2003052177A1/en active Application Filing
- 2002-12-13 EP EP02791923A patent/EP1466041B1/de not_active Expired - Lifetime
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