GB2433738B - Optical Quality Diamond Material - Google Patents
Optical Quality Diamond MaterialInfo
- Publication number
- GB2433738B GB2433738B GB0703373A GB0703373A GB2433738B GB 2433738 B GB2433738 B GB 2433738B GB 0703373 A GB0703373 A GB 0703373A GB 0703373 A GB0703373 A GB 0703373A GB 2433738 B GB2433738 B GB 2433738B
- Authority
- GB
- United Kingdom
- Prior art keywords
- optical
- diamond material
- less
- cvd
- wavelength
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000003287 optical effect Effects 0.000 title abstract 10
- 229910003460 diamond Inorganic materials 0.000 title abstract 5
- 239000010432 diamond Substances 0.000 title abstract 5
- 239000000463 material Substances 0.000 title abstract 5
- 239000013078 crystal Substances 0.000 abstract 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract 2
- 238000010521 absorption reaction Methods 0.000 abstract 2
- 238000005229 chemical vapour deposition Methods 0.000 abstract 1
- 230000007547 defect Effects 0.000 abstract 1
- 229910052757 nitrogen Inorganic materials 0.000 abstract 1
- 239000007787 solid Substances 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/25—Diamond
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
- C23C16/0227—Pretreatment of the material to be coated by cleaning or etching
- C23C16/0245—Pretreatment of the material to be coated by cleaning or etching by etching with a plasma
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
- C23C16/27—Diamond only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
- C23C16/27—Diamond only
- C23C16/274—Diamond only using microwave discharges
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/04—Diamond
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Life Sciences & Earth Sciences (AREA)
- Geology (AREA)
- General Life Sciences & Earth Sciences (AREA)
Abstract
A CVD single crystal diamond material suitable for use in, or as, an optical device or element which has an optical absorption such that a sample of at least 0.5 mm thickness has an optical absorption coefficient at a wavelength of 1.06 žm of less than 0.09cm<-1> or at a wavelength of 10.6 žm of less than 0.04cm<-1>. Also a CVD single crystal diamond material which has an optical scatter such that for a sample of at least 0.4 mm thickness the forward scatter at 1.064 žm integrated over a solid angle from 3.5 to 87.5{ from the transmitted beam is less than 0.4%. It is suitable for use in a wide range of optical applications such as, for example, optical windows, laser windows, optical reflectors, optical refractors and gratings, and etalons. The CVD diamond material is produced by a CVD method in the presence of a controlled low level of nitrogen to control the development of crystal defects and thus achieve a diamond material having key characteristics for optical applications.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GBGB0227261.5A GB0227261D0 (en) | 2002-11-21 | 2002-11-21 | Optical quality diamond material |
GB0512114A GB2411895B (en) | 2002-11-21 | 2003-11-20 | Optical quality diamond material |
Publications (3)
Publication Number | Publication Date |
---|---|
GB0703373D0 GB0703373D0 (en) | 2007-03-28 |
GB2433738A GB2433738A (en) | 2007-07-04 |
GB2433738B true GB2433738B (en) | 2007-08-15 |
Family
ID=38157541
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB0703373A Expired - Lifetime GB2433738B (en) | 2002-11-21 | 2007-02-21 | Optical Quality Diamond Material |
GB0703372A Expired - Lifetime GB2433737B (en) | 2002-11-21 | 2007-02-21 | Optical quality diamond material |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB0703372A Expired - Lifetime GB2433737B (en) | 2002-11-21 | 2007-02-21 | Optical quality diamond material |
Country Status (1)
Country | Link |
---|---|
GB (2) | GB2433738B (en) |
Families Citing this family (51)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2004022821A1 (en) | 2002-09-06 | 2004-03-18 | Element Six Limited | Coloured diamond |
GB201013112D0 (en) | 2010-08-04 | 2010-09-22 | Element Six Ltd | A diamond optical element |
GB201307321D0 (en) * | 2013-04-23 | 2013-05-29 | Element Six Ltd | Synthetic diamond optical elements |
US10012769B2 (en) * | 2013-03-06 | 2018-07-03 | Element Six Technologies Limited | Synthetic diamond optical elements |
GB201307312D0 (en) * | 2013-04-23 | 2013-05-29 | Element Six Ltd | Synthetic diamond optical elements |
GB201310212D0 (en) | 2013-06-07 | 2013-07-24 | Element Six Ltd | Post-synthesis processing of diamond and related super-hard materials |
US9910105B2 (en) | 2014-03-20 | 2018-03-06 | Lockheed Martin Corporation | DNV magnetic field detector |
US9817081B2 (en) | 2016-01-21 | 2017-11-14 | Lockheed Martin Corporation | Magnetometer with light pipe |
US9853837B2 (en) | 2014-04-07 | 2017-12-26 | Lockheed Martin Corporation | High bit-rate magnetic communication |
US9829545B2 (en) | 2015-11-20 | 2017-11-28 | Lockheed Martin Corporation | Apparatus and method for hypersensitivity detection of magnetic field |
US10520558B2 (en) | 2016-01-21 | 2019-12-31 | Lockheed Martin Corporation | Diamond nitrogen vacancy sensor with nitrogen-vacancy center diamond located between dual RF sources |
US9845153B2 (en) | 2015-01-28 | 2017-12-19 | Lockheed Martin Corporation | In-situ power charging |
US10168393B2 (en) | 2014-09-25 | 2019-01-01 | Lockheed Martin Corporation | Micro-vacancy center device |
US10088452B2 (en) | 2016-01-12 | 2018-10-02 | Lockheed Martin Corporation | Method for detecting defects in conductive materials based on differences in magnetic field characteristics measured along the conductive materials |
US10338162B2 (en) | 2016-01-21 | 2019-07-02 | Lockheed Martin Corporation | AC vector magnetic anomaly detection with diamond nitrogen vacancies |
US9590601B2 (en) | 2014-04-07 | 2017-03-07 | Lockheed Martin Corporation | Energy efficient controlled magnetic field generator circuit |
US9551763B1 (en) | 2016-01-21 | 2017-01-24 | Lockheed Martin Corporation | Diamond nitrogen vacancy sensor with common RF and magnetic fields generator |
US9557391B2 (en) | 2015-01-23 | 2017-01-31 | Lockheed Martin Corporation | Apparatus and method for high sensitivity magnetometry measurement and signal processing in a magnetic detection system |
US9910104B2 (en) | 2015-01-23 | 2018-03-06 | Lockheed Martin Corporation | DNV magnetic field detector |
US9638821B2 (en) | 2014-03-20 | 2017-05-02 | Lockheed Martin Corporation | Mapping and monitoring of hydraulic fractures using vector magnetometers |
CN106460226A (en) | 2014-07-15 | 2017-02-22 | 住友电气工业株式会社 | Single crystal diamond, method for producing single crystal diamond, and tool using single crystal diamond |
WO2016190909A2 (en) | 2015-01-28 | 2016-12-01 | Lockheed Martin Corporation | Magnetic navigation methods and systems utilizing power grid and communication network |
WO2016126436A1 (en) | 2015-02-04 | 2016-08-11 | Lockheed Martin Corporation | Apparatus and method for recovery of three dimensional magnetic field from a magnetic detection system |
GB2550809A (en) | 2015-02-04 | 2017-11-29 | Lockheed Corp | Apparatus and method for estimating absolute axes' orientations for a magnetic detection system |
WO2017078766A1 (en) | 2015-11-04 | 2017-05-11 | Lockheed Martin Corporation | Magnetic band-pass filter |
WO2017087013A1 (en) | 2015-11-20 | 2017-05-26 | Lockheed Martin Corporation | Apparatus and method for closed loop processing for a magnetic detection system |
WO2017095454A1 (en) | 2015-12-01 | 2017-06-08 | Lockheed Martin Corporation | Communication via a magnio |
WO2017127090A1 (en) | 2016-01-21 | 2017-07-27 | Lockheed Martin Corporation | Higher magnetic sensitivity through fluorescence manipulation by phonon spectrum control |
WO2017127081A1 (en) | 2016-01-21 | 2017-07-27 | Lockheed Martin Corporation | Diamond nitrogen vacancy sensor with circuitry on diamond |
AU2016387314A1 (en) | 2016-01-21 | 2018-09-06 | Lockheed Martin Corporation | Magnetometer with a light emitting diode |
WO2017127098A1 (en) | 2016-01-21 | 2017-07-27 | Lockheed Martin Corporation | Diamond nitrogen vacancy sensed ferro-fluid hydrophone |
US10527746B2 (en) | 2016-05-31 | 2020-01-07 | Lockheed Martin Corporation | Array of UAVS with magnetometers |
US10145910B2 (en) | 2017-03-24 | 2018-12-04 | Lockheed Martin Corporation | Photodetector circuit saturation mitigation for magneto-optical high intensity pulses |
US10359479B2 (en) | 2017-02-20 | 2019-07-23 | Lockheed Martin Corporation | Efficient thermal drift compensation in DNV vector magnetometry |
US10345396B2 (en) | 2016-05-31 | 2019-07-09 | Lockheed Martin Corporation | Selected volume continuous illumination magnetometer |
US10274550B2 (en) | 2017-03-24 | 2019-04-30 | Lockheed Martin Corporation | High speed sequential cancellation for pulsed mode |
US10571530B2 (en) | 2016-05-31 | 2020-02-25 | Lockheed Martin Corporation | Buoy array of magnetometers |
US20170343621A1 (en) | 2016-05-31 | 2017-11-30 | Lockheed Martin Corporation | Magneto-optical defect center magnetometer |
US10330744B2 (en) | 2017-03-24 | 2019-06-25 | Lockheed Martin Corporation | Magnetometer with a waveguide |
US10228429B2 (en) | 2017-03-24 | 2019-03-12 | Lockheed Martin Corporation | Apparatus and method for resonance magneto-optical defect center material pulsed mode referencing |
US10345395B2 (en) | 2016-12-12 | 2019-07-09 | Lockheed Martin Corporation | Vector magnetometry localization of subsurface liquids |
US10317279B2 (en) | 2016-05-31 | 2019-06-11 | Lockheed Martin Corporation | Optical filtration system for diamond material with nitrogen vacancy centers |
US10408890B2 (en) | 2017-03-24 | 2019-09-10 | Lockheed Martin Corporation | Pulsed RF methods for optimization of CW measurements |
US10338163B2 (en) | 2016-07-11 | 2019-07-02 | Lockheed Martin Corporation | Multi-frequency excitation schemes for high sensitivity magnetometry measurement with drift error compensation |
US10281550B2 (en) | 2016-11-14 | 2019-05-07 | Lockheed Martin Corporation | Spin relaxometry based molecular sequencing |
US10371765B2 (en) | 2016-07-11 | 2019-08-06 | Lockheed Martin Corporation | Geolocation of magnetic sources using vector magnetometer sensors |
US10677953B2 (en) | 2016-05-31 | 2020-06-09 | Lockheed Martin Corporation | Magneto-optical detecting apparatus and methods |
US10371760B2 (en) | 2017-03-24 | 2019-08-06 | Lockheed Martin Corporation | Standing-wave radio frequency exciter |
US10379174B2 (en) | 2017-03-24 | 2019-08-13 | Lockheed Martin Corporation | Bias magnet array for magnetometer |
US10338164B2 (en) | 2017-03-24 | 2019-07-02 | Lockheed Martin Corporation | Vacancy center material with highly efficient RF excitation |
US10459041B2 (en) | 2017-03-24 | 2019-10-29 | Lockheed Martin Corporation | Magnetic detection system with highly integrated diamond nitrogen vacancy sensor |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5451430A (en) * | 1994-05-05 | 1995-09-19 | General Electric Company | Method for enhancing the toughness of CVD diamond |
JPH1149596A (en) * | 1997-07-14 | 1999-02-23 | De Beers Ind Diamond Div Ltd | Diamond |
WO2003052177A1 (en) * | 2001-12-14 | 2003-06-26 | Element Six Limited | Coloured diamond |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2730144B2 (en) * | 1989-03-07 | 1998-03-25 | 住友電気工業株式会社 | Single crystal diamond layer formation method |
KR950032732A (en) * | 1994-03-25 | 1995-12-22 | 야스니시구니오 | Diamond Crystals and Manufacturing Method Thereof |
JP3168961B2 (en) * | 1997-10-06 | 2001-05-21 | 住友電気工業株式会社 | Diamond substrate, method for evaluating diamond substrate, and diamond surface acoustic wave filter |
-
2007
- 2007-02-21 GB GB0703373A patent/GB2433738B/en not_active Expired - Lifetime
- 2007-02-21 GB GB0703372A patent/GB2433737B/en not_active Expired - Lifetime
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5451430A (en) * | 1994-05-05 | 1995-09-19 | General Electric Company | Method for enhancing the toughness of CVD diamond |
JPH1149596A (en) * | 1997-07-14 | 1999-02-23 | De Beers Ind Diamond Div Ltd | Diamond |
WO2003052177A1 (en) * | 2001-12-14 | 2003-06-26 | Element Six Limited | Coloured diamond |
Also Published As
Publication number | Publication date |
---|---|
GB0703372D0 (en) | 2007-03-28 |
GB0703373D0 (en) | 2007-03-28 |
GB2433737A (en) | 2007-07-04 |
GB2433738A (en) | 2007-07-04 |
GB2433737B (en) | 2007-08-15 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
GB2433738B (en) | Optical Quality Diamond Material | |
EP2284298A3 (en) | Optical quality diamond material | |
GB2400116B (en) | Boron doped diamond | |
WO2002037621A3 (en) | Tunable controlled laser array | |
TW200745712A (en) | Wavelength conversion optical element, method for fabricating wavelength conversion optical element, wavelength conversion device, ultraviolet laser irradiator and laser material processing system | |
CA2169785A1 (en) | Saturable bragg reflector | |
EP1315027A3 (en) | Optical converting method using a single-crystal lithium tetraborate | |
CA2470280A1 (en) | Electromagnetic radiation attenuating and scattering member with improved thermal stability | |
HK1064742A1 (en) | Method for producing light of a given polarisationstate | |
EP1035084A3 (en) | Synthetic fused silica glass member | |
WO2004083133A3 (en) | Apparatus for cutting glass plate | |
WO2004078663A3 (en) | Optical synthetic quartz glass and method for producing the same | |
WO2005045476A3 (en) | Apparatus for combining multiple lasers and methods of use | |
WO2005031396A3 (en) | Methods for manufacturing volume bragg grating elements | |
AU2003235105A1 (en) | Synthetic quartz glass for optical member, projection exposure device, and projection exposure method | |
DE50304214D1 (en) | PHOTONIC CRYSTALS WITH SKELETON STRUCTURE | |
KR860700375A (en) | Raman laser with single reflector | |
WO2002071555A9 (en) | High repetition rate excimer laser system | |
Vydra et al. | Improved all-silica fibers for deep-UV applications | |
Karlov et al. | Optical materials for CO2 lasers | |
WO2005027209A3 (en) | Multiple zone structure capable of light radiation annealing and method using said structure | |
WO2003010572A3 (en) | Method and apparatus for aligning a waveguide with a radiation source | |
Yoshida et al. | Wavelength-dependence of laser-induced damage in fused silica and fused quartz | |
AU2002358485A1 (en) | Method and device for producing laser radiation based on semiconductors | |
EP1329772A3 (en) | Lithographic projection apparatus, device manufacturing method and device manufactured thereby |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
732E | Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977) |
Free format text: REGISTERED BETWEEN 20140710 AND 20140716 |
|
PE20 | Patent expired after termination of 20 years |
Expiry date: 20231119 |