GB0703372D0 - Optical quality diamond material - Google Patents

Optical quality diamond material

Info

Publication number
GB0703372D0
GB0703372D0 GBGB0703372.3A GB0703372A GB0703372D0 GB 0703372 D0 GB0703372 D0 GB 0703372D0 GB 0703372 A GB0703372 A GB 0703372A GB 0703372 D0 GB0703372 D0 GB 0703372D0
Authority
GB
United Kingdom
Prior art keywords
optical
diamond material
less
cvd
wavelength
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GBGB0703372.3A
Other versions
GB2433737B (en
GB2433737A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Element Six Ltd
Original Assignee
Element Six Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from GBGB0227261.5A external-priority patent/GB0227261D0/en
Application filed by Element Six Ltd filed Critical Element Six Ltd
Publication of GB0703372D0 publication Critical patent/GB0703372D0/en
Publication of GB2433737A publication Critical patent/GB2433737A/en
Application granted granted Critical
Publication of GB2433737B publication Critical patent/GB2433737B/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C01B31/06—
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0227—Pretreatment of the material to be coated by cleaning or etching
    • C23C16/0245—Pretreatment of the material to be coated by cleaning or etching by etching with a plasma
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C23C16/274—Diamond only using microwave discharges
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics

Abstract

A CVD single crystal diamond material suitable for use in, or as, an optical device or element which has an optical absorption such that a sample of at least 0.5 mm thickness has an optical absorption coefficient at a wavelength of 1.06 žm of less than 0.09cm<-1> or at a wavelength of 10.6 žm of less than 0.04cm<-1>. Also a CVD single crystal diamond material which has an optical scatter such that for a sample of at least 0.4 mm thickness the forward scatter at 1.064 žm integrated over a solid angle from 3.5 to 87.5{ from the transmitted beam is less than 0.4%. It is suitable for use in a wide range of optical applications such as, for example, optical windows, laser windows, optical reflectors, optical refractors and gratings, and etalons. The CVD diamond material is produced by a CVD method in the presence of a controlled low level of nitrogen to control the development of crystal defects and thus achieve a diamond material having key characteristics for optical applications.
GB0703372A 2002-11-21 2007-02-21 Optical quality diamond material Expired - Lifetime GB2433737B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GBGB0227261.5A GB0227261D0 (en) 2002-11-21 2002-11-21 Optical quality diamond material
GB0512114A GB2411895B (en) 2002-11-21 2003-11-20 Optical quality diamond material

Publications (3)

Publication Number Publication Date
GB0703372D0 true GB0703372D0 (en) 2007-03-28
GB2433737A GB2433737A (en) 2007-07-04
GB2433737B GB2433737B (en) 2007-08-15

Family

ID=38157541

Family Applications (2)

Application Number Title Priority Date Filing Date
GB0703372A Expired - Lifetime GB2433737B (en) 2002-11-21 2007-02-21 Optical quality diamond material
GB0703373A Expired - Lifetime GB2433738B (en) 2002-11-21 2007-02-21 Optical Quality Diamond Material

Family Applications After (1)

Application Number Title Priority Date Filing Date
GB0703373A Expired - Lifetime GB2433738B (en) 2002-11-21 2007-02-21 Optical Quality Diamond Material

Country Status (1)

Country Link
GB (2) GB2433737B (en)

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US7172655B2 (en) 2002-09-06 2007-02-06 Daniel James Twitchen Colored diamond
GB201013112D0 (en) 2010-08-04 2010-09-22 Element Six Ltd A diamond optical element
US10012769B2 (en) * 2013-03-06 2018-07-03 Element Six Technologies Limited Synthetic diamond optical elements
GB201307312D0 (en) * 2013-04-23 2013-05-29 Element Six Ltd Synthetic diamond optical elements
GB201307321D0 (en) * 2013-04-23 2013-05-29 Element Six Ltd Synthetic diamond optical elements
GB201310212D0 (en) 2013-06-07 2013-07-24 Element Six Ltd Post-synthesis processing of diamond and related super-hard materials
US9910105B2 (en) 2014-03-20 2018-03-06 Lockheed Martin Corporation DNV magnetic field detector
US9638821B2 (en) 2014-03-20 2017-05-02 Lockheed Martin Corporation Mapping and monitoring of hydraulic fractures using vector magnetometers
US9541610B2 (en) 2015-02-04 2017-01-10 Lockheed Martin Corporation Apparatus and method for recovery of three dimensional magnetic field from a magnetic detection system
US9817081B2 (en) 2016-01-21 2017-11-14 Lockheed Martin Corporation Magnetometer with light pipe
US10120039B2 (en) 2015-11-20 2018-11-06 Lockheed Martin Corporation Apparatus and method for closed loop processing for a magnetic detection system
US9824597B2 (en) 2015-01-28 2017-11-21 Lockheed Martin Corporation Magnetic navigation methods and systems utilizing power grid and communication network
US9853837B2 (en) 2014-04-07 2017-12-26 Lockheed Martin Corporation High bit-rate magnetic communication
US9835693B2 (en) 2016-01-21 2017-12-05 Lockheed Martin Corporation Higher magnetic sensitivity through fluorescence manipulation by phonon spectrum control
US10168393B2 (en) 2014-09-25 2019-01-01 Lockheed Martin Corporation Micro-vacancy center device
US10012704B2 (en) 2015-11-04 2018-07-03 Lockheed Martin Corporation Magnetic low-pass filter
US10241158B2 (en) 2015-02-04 2019-03-26 Lockheed Martin Corporation Apparatus and method for estimating absolute axes' orientations for a magnetic detection system
US10088336B2 (en) 2016-01-21 2018-10-02 Lockheed Martin Corporation Diamond nitrogen vacancy sensed ferro-fluid hydrophone
US9910104B2 (en) 2015-01-23 2018-03-06 Lockheed Martin Corporation DNV magnetic field detector
CA2945016A1 (en) 2014-04-07 2015-10-15 Lockheed Martin Corporation Energy efficient controlled magnetic field generator circuit
KR102407952B1 (en) * 2014-07-15 2022-06-13 스미토모덴키고교가부시키가이샤 Single crystal diamond, method for producing single crystal diamond, and tool using single crystal diamond
KR20170108055A (en) 2015-01-23 2017-09-26 록히드 마틴 코포레이션 Apparatus and method for high-sensitivity magnetic force measurement and signal processing in a magnetic detection system
BR112017016261A2 (en) 2015-01-28 2018-03-27 Lockheed Martin Corporation in situ power load
WO2017087014A1 (en) 2015-11-20 2017-05-26 Lockheed Martin Corporation Apparatus and method for hypersensitivity detection of magnetic field
WO2017095454A1 (en) 2015-12-01 2017-06-08 Lockheed Martin Corporation Communication via a magnio
WO2017123261A1 (en) 2016-01-12 2017-07-20 Lockheed Martin Corporation Defect detector for conductive materials
AU2016388316A1 (en) 2016-01-21 2018-09-06 Lockheed Martin Corporation Diamond nitrogen vacancy sensor with common RF and magnetic fields generator
AU2016387314A1 (en) 2016-01-21 2018-09-06 Lockheed Martin Corporation Magnetometer with a light emitting diode
WO2017127096A1 (en) 2016-01-21 2017-07-27 Lockheed Martin Corporation Diamond nitrogen vacancy sensor with dual rf sources
EP3405603A4 (en) 2016-01-21 2019-10-16 Lockheed Martin Corporation Diamond nitrogen vacancy sensor with circuitry on diamond
WO2017127079A1 (en) 2016-01-21 2017-07-27 Lockheed Martin Corporation Ac vector magnetic anomaly detection with diamond nitrogen vacancies
US10145910B2 (en) 2017-03-24 2018-12-04 Lockheed Martin Corporation Photodetector circuit saturation mitigation for magneto-optical high intensity pulses
US10527746B2 (en) 2016-05-31 2020-01-07 Lockheed Martin Corporation Array of UAVS with magnetometers
US10677953B2 (en) 2016-05-31 2020-06-09 Lockheed Martin Corporation Magneto-optical detecting apparatus and methods
US10345395B2 (en) 2016-12-12 2019-07-09 Lockheed Martin Corporation Vector magnetometry localization of subsurface liquids
US10408890B2 (en) 2017-03-24 2019-09-10 Lockheed Martin Corporation Pulsed RF methods for optimization of CW measurements
US10274550B2 (en) 2017-03-24 2019-04-30 Lockheed Martin Corporation High speed sequential cancellation for pulsed mode
US10359479B2 (en) 2017-02-20 2019-07-23 Lockheed Martin Corporation Efficient thermal drift compensation in DNV vector magnetometry
US10317279B2 (en) 2016-05-31 2019-06-11 Lockheed Martin Corporation Optical filtration system for diamond material with nitrogen vacancy centers
US10571530B2 (en) 2016-05-31 2020-02-25 Lockheed Martin Corporation Buoy array of magnetometers
US10338163B2 (en) 2016-07-11 2019-07-02 Lockheed Martin Corporation Multi-frequency excitation schemes for high sensitivity magnetometry measurement with drift error compensation
US10228429B2 (en) 2017-03-24 2019-03-12 Lockheed Martin Corporation Apparatus and method for resonance magneto-optical defect center material pulsed mode referencing
US10345396B2 (en) 2016-05-31 2019-07-09 Lockheed Martin Corporation Selected volume continuous illumination magnetometer
US10330744B2 (en) 2017-03-24 2019-06-25 Lockheed Martin Corporation Magnetometer with a waveguide
US10281550B2 (en) 2016-11-14 2019-05-07 Lockheed Martin Corporation Spin relaxometry based molecular sequencing
US10371765B2 (en) 2016-07-11 2019-08-06 Lockheed Martin Corporation Geolocation of magnetic sources using vector magnetometer sensors
US20170343621A1 (en) 2016-05-31 2017-11-30 Lockheed Martin Corporation Magneto-optical defect center magnetometer
US10459041B2 (en) 2017-03-24 2019-10-29 Lockheed Martin Corporation Magnetic detection system with highly integrated diamond nitrogen vacancy sensor
US10379174B2 (en) 2017-03-24 2019-08-13 Lockheed Martin Corporation Bias magnet array for magnetometer
US10371760B2 (en) 2017-03-24 2019-08-06 Lockheed Martin Corporation Standing-wave radio frequency exciter
US10338164B2 (en) 2017-03-24 2019-07-02 Lockheed Martin Corporation Vacancy center material with highly efficient RF excitation

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JP2730144B2 (en) * 1989-03-07 1998-03-25 住友電気工業株式会社 Single crystal diamond layer formation method
KR950032732A (en) * 1994-03-25 1995-12-22 야스니시구니오 Diamond Crystals and Manufacturing Method Thereof
US5451430A (en) * 1994-05-05 1995-09-19 General Electric Company Method for enhancing the toughness of CVD diamond
JPH1149596A (en) * 1997-07-14 1999-02-23 De Beers Ind Diamond Div Ltd Diamond
JP3168961B2 (en) * 1997-10-06 2001-05-21 住友電気工業株式会社 Diamond substrate, method for evaluating diamond substrate, and diamond surface acoustic wave filter
GB0130004D0 (en) * 2001-12-14 2002-02-06 Diamanx Products Ltd Coloured diamond

Also Published As

Publication number Publication date
GB0703373D0 (en) 2007-03-28
GB2433738B (en) 2007-08-15
GB2433737B (en) 2007-08-15
GB2433737A (en) 2007-07-04
GB2433738A (en) 2007-07-04

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Legal Events

Date Code Title Description
732E Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977)

Free format text: REGISTERED BETWEEN 20140710 AND 20140716

PE20 Patent expired after termination of 20 years

Expiry date: 20231119