GB2433737B - Optical quality diamond material - Google Patents

Optical quality diamond material

Info

Publication number
GB2433737B
GB2433737B GB0703372A GB0703372A GB2433737B GB 2433737 B GB2433737 B GB 2433737B GB 0703372 A GB0703372 A GB 0703372A GB 0703372 A GB0703372 A GB 0703372A GB 2433737 B GB2433737 B GB 2433737B
Authority
GB
United Kingdom
Prior art keywords
optical
diamond material
less
cvd
wavelength
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
GB0703372A
Other versions
GB2433737A (en
GB0703372D0 (en
Inventor
Herman Philip Godfried
Geoffrey Alan Scarsbrook
Daniel James Twitchen
Evert Houwman
Andrew John Whitehead
Clive Edward Hall
Philip Maurice Martineau
Wilhelmus Gerarda Mar Nelissen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Element Six Ltd
Original Assignee
Element Six Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from GBGB0227261.5A external-priority patent/GB0227261D0/en
Application filed by Element Six Ltd filed Critical Element Six Ltd
Publication of GB0703372D0 publication Critical patent/GB0703372D0/en
Publication of GB2433737A publication Critical patent/GB2433737A/en
Application granted granted Critical
Publication of GB2433737B publication Critical patent/GB2433737B/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/25—Diamond
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0227—Pretreatment of the material to be coated by cleaning or etching
    • C23C16/0245—Pretreatment of the material to be coated by cleaning or etching by etching with a plasma
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C23C16/274—Diamond only using microwave discharges
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Nonlinear Science (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Geology (AREA)
  • General Life Sciences & Earth Sciences (AREA)

Abstract

A CVD single crystal diamond material suitable for use in, or as, an optical device or element which has an optical absorption such that a sample of at least 0.5 mm thickness has an optical absorption coefficient at a wavelength of 1.06 žm of less than 0.09cm<-1> or at a wavelength of 10.6 žm of less than 0.04cm<-1>. Also a CVD single crystal diamond material which has an optical scatter such that for a sample of at least 0.4 mm thickness the forward scatter at 1.064 žm integrated over a solid angle from 3.5 to 87.5{ from the transmitted beam is less than 0.4%. It is suitable for use in a wide range of optical applications such as, for example, optical windows, laser windows, optical reflectors, optical refractors and gratings, and etalons. The CVD diamond material is produced by a CVD method in the presence of a controlled low level of nitrogen to control the development of crystal defects and thus achieve a diamond material having key characteristics for optical applications.
GB0703372A 2002-11-21 2007-02-21 Optical quality diamond material Expired - Lifetime GB2433737B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GBGB0227261.5A GB0227261D0 (en) 2002-11-21 2002-11-21 Optical quality diamond material
GB0512114A GB2411895B (en) 2002-11-21 2003-11-20 Optical quality diamond material

Publications (3)

Publication Number Publication Date
GB0703372D0 GB0703372D0 (en) 2007-03-28
GB2433737A GB2433737A (en) 2007-07-04
GB2433737B true GB2433737B (en) 2007-08-15

Family

ID=38157541

Family Applications (2)

Application Number Title Priority Date Filing Date
GB0703373A Expired - Lifetime GB2433738B (en) 2002-11-21 2007-02-21 Optical Quality Diamond Material
GB0703372A Expired - Lifetime GB2433737B (en) 2002-11-21 2007-02-21 Optical quality diamond material

Family Applications Before (1)

Application Number Title Priority Date Filing Date
GB0703373A Expired - Lifetime GB2433738B (en) 2002-11-21 2007-02-21 Optical Quality Diamond Material

Country Status (1)

Country Link
GB (2) GB2433738B (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9541610B2 (en) 2015-02-04 2017-01-10 Lockheed Martin Corporation Apparatus and method for recovery of three dimensional magnetic field from a magnetic detection system
US9551763B1 (en) 2016-01-21 2017-01-24 Lockheed Martin Corporation Diamond nitrogen vacancy sensor with common RF and magnetic fields generator
US9557391B2 (en) 2015-01-23 2017-01-31 Lockheed Martin Corporation Apparatus and method for high sensitivity magnetometry measurement and signal processing in a magnetic detection system
US9590601B2 (en) 2014-04-07 2017-03-07 Lockheed Martin Corporation Energy efficient controlled magnetic field generator circuit

Families Citing this family (47)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101052395B1 (en) 2002-09-06 2011-07-28 엘리멘트 식스 리미티드 Colored diamonds
GB201013112D0 (en) * 2010-08-04 2010-09-22 Element Six Ltd A diamond optical element
US10012769B2 (en) * 2013-03-06 2018-07-03 Element Six Technologies Limited Synthetic diamond optical elements
GB201307321D0 (en) * 2013-04-23 2013-05-29 Element Six Ltd Synthetic diamond optical elements
GB201307312D0 (en) * 2013-04-23 2013-05-29 Element Six Ltd Synthetic diamond optical elements
GB201310212D0 (en) * 2013-06-07 2013-07-24 Element Six Ltd Post-synthesis processing of diamond and related super-hard materials
US10088452B2 (en) 2016-01-12 2018-10-02 Lockheed Martin Corporation Method for detecting defects in conductive materials based on differences in magnetic field characteristics measured along the conductive materials
US9835693B2 (en) 2016-01-21 2017-12-05 Lockheed Martin Corporation Higher magnetic sensitivity through fluorescence manipulation by phonon spectrum control
US10168393B2 (en) 2014-09-25 2019-01-01 Lockheed Martin Corporation Micro-vacancy center device
US9853837B2 (en) 2014-04-07 2017-12-26 Lockheed Martin Corporation High bit-rate magnetic communication
US9614589B1 (en) 2015-12-01 2017-04-04 Lockheed Martin Corporation Communication via a magnio
US10006973B2 (en) 2016-01-21 2018-06-26 Lockheed Martin Corporation Magnetometer with a light emitting diode
US10338162B2 (en) 2016-01-21 2019-07-02 Lockheed Martin Corporation AC vector magnetic anomaly detection with diamond nitrogen vacancies
US9824597B2 (en) 2015-01-28 2017-11-21 Lockheed Martin Corporation Magnetic navigation methods and systems utilizing power grid and communication network
US10088336B2 (en) 2016-01-21 2018-10-02 Lockheed Martin Corporation Diamond nitrogen vacancy sensed ferro-fluid hydrophone
US9823313B2 (en) 2016-01-21 2017-11-21 Lockheed Martin Corporation Diamond nitrogen vacancy sensor with circuitry on diamond
US9910104B2 (en) 2015-01-23 2018-03-06 Lockheed Martin Corporation DNV magnetic field detector
US9910105B2 (en) 2014-03-20 2018-03-06 Lockheed Martin Corporation DNV magnetic field detector
US9638821B2 (en) 2014-03-20 2017-05-02 Lockheed Martin Corporation Mapping and monitoring of hydraulic fractures using vector magnetometers
US10520558B2 (en) 2016-01-21 2019-12-31 Lockheed Martin Corporation Diamond nitrogen vacancy sensor with nitrogen-vacancy center diamond located between dual RF sources
EP3170926A4 (en) * 2014-07-15 2018-07-11 Sumitomo Electric Industries, Ltd. Single crystal diamond, method for producing single crystal diamond, and tool using single crystal diamond
BR112017016261A2 (en) 2015-01-28 2018-03-27 Lockheed Martin Corporation in situ power load
GB2550809A (en) 2015-02-04 2017-11-29 Lockheed Corp Apparatus and method for estimating absolute axes' orientations for a magnetic detection system
EP3371614A1 (en) 2015-11-04 2018-09-12 Lockheed Martin Corporation Magnetic band-pass filter
WO2017087013A1 (en) 2015-11-20 2017-05-26 Lockheed Martin Corporation Apparatus and method for closed loop processing for a magnetic detection system
WO2017087014A1 (en) 2015-11-20 2017-05-26 Lockheed Martin Corporation Apparatus and method for hypersensitivity detection of magnetic field
AU2016387312A1 (en) 2016-01-21 2018-09-06 Lockheed Martin Corporation Magnetometer with light pipe
US10408890B2 (en) 2017-03-24 2019-09-10 Lockheed Martin Corporation Pulsed RF methods for optimization of CW measurements
US20170343621A1 (en) 2016-05-31 2017-11-30 Lockheed Martin Corporation Magneto-optical defect center magnetometer
US10345396B2 (en) 2016-05-31 2019-07-09 Lockheed Martin Corporation Selected volume continuous illumination magnetometer
US10571530B2 (en) 2016-05-31 2020-02-25 Lockheed Martin Corporation Buoy array of magnetometers
US10317279B2 (en) 2016-05-31 2019-06-11 Lockheed Martin Corporation Optical filtration system for diamond material with nitrogen vacancy centers
US10338163B2 (en) 2016-07-11 2019-07-02 Lockheed Martin Corporation Multi-frequency excitation schemes for high sensitivity magnetometry measurement with drift error compensation
US10330744B2 (en) 2017-03-24 2019-06-25 Lockheed Martin Corporation Magnetometer with a waveguide
US10145910B2 (en) 2017-03-24 2018-12-04 Lockheed Martin Corporation Photodetector circuit saturation mitigation for magneto-optical high intensity pulses
US10345395B2 (en) 2016-12-12 2019-07-09 Lockheed Martin Corporation Vector magnetometry localization of subsurface liquids
US10527746B2 (en) 2016-05-31 2020-01-07 Lockheed Martin Corporation Array of UAVS with magnetometers
US10359479B2 (en) 2017-02-20 2019-07-23 Lockheed Martin Corporation Efficient thermal drift compensation in DNV vector magnetometry
US10281550B2 (en) 2016-11-14 2019-05-07 Lockheed Martin Corporation Spin relaxometry based molecular sequencing
US10371765B2 (en) 2016-07-11 2019-08-06 Lockheed Martin Corporation Geolocation of magnetic sources using vector magnetometer sensors
US10228429B2 (en) 2017-03-24 2019-03-12 Lockheed Martin Corporation Apparatus and method for resonance magneto-optical defect center material pulsed mode referencing
US10274550B2 (en) 2017-03-24 2019-04-30 Lockheed Martin Corporation High speed sequential cancellation for pulsed mode
US10677953B2 (en) 2016-05-31 2020-06-09 Lockheed Martin Corporation Magneto-optical detecting apparatus and methods
US10379174B2 (en) 2017-03-24 2019-08-13 Lockheed Martin Corporation Bias magnet array for magnetometer
US10459041B2 (en) 2017-03-24 2019-10-29 Lockheed Martin Corporation Magnetic detection system with highly integrated diamond nitrogen vacancy sensor
US10338164B2 (en) 2017-03-24 2019-07-02 Lockheed Martin Corporation Vacancy center material with highly efficient RF excitation
US10371760B2 (en) 2017-03-24 2019-08-06 Lockheed Martin Corporation Standing-wave radio frequency exciter

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0386727A1 (en) * 1989-03-07 1990-09-12 Sumitomo Electric Industries, Ltd. Method for producing single crystal diamond film
EP0674028A2 (en) * 1994-03-25 1995-09-27 Tokyo Gas Co., Ltd. Diamond crystal and method of manufacturing the same
US6210780B1 (en) * 1997-10-06 2001-04-03 Sumitomo Electric Industries, Ltd. Diamond wafer, method of estimating a diamond wafer and diamond surface acoustic wave device

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5451430A (en) * 1994-05-05 1995-09-19 General Electric Company Method for enhancing the toughness of CVD diamond
JPH1149596A (en) * 1997-07-14 1999-02-23 De Beers Ind Diamond Div Ltd Diamond
GB0130004D0 (en) * 2001-12-14 2002-02-06 Diamanx Products Ltd Coloured diamond

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0386727A1 (en) * 1989-03-07 1990-09-12 Sumitomo Electric Industries, Ltd. Method for producing single crystal diamond film
EP0674028A2 (en) * 1994-03-25 1995-09-27 Tokyo Gas Co., Ltd. Diamond crystal and method of manufacturing the same
US6210780B1 (en) * 1997-10-06 2001-04-03 Sumitomo Electric Industries, Ltd. Diamond wafer, method of estimating a diamond wafer and diamond surface acoustic wave device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9590601B2 (en) 2014-04-07 2017-03-07 Lockheed Martin Corporation Energy efficient controlled magnetic field generator circuit
US9557391B2 (en) 2015-01-23 2017-01-31 Lockheed Martin Corporation Apparatus and method for high sensitivity magnetometry measurement and signal processing in a magnetic detection system
US9541610B2 (en) 2015-02-04 2017-01-10 Lockheed Martin Corporation Apparatus and method for recovery of three dimensional magnetic field from a magnetic detection system
US9551763B1 (en) 2016-01-21 2017-01-24 Lockheed Martin Corporation Diamond nitrogen vacancy sensor with common RF and magnetic fields generator

Also Published As

Publication number Publication date
GB0703373D0 (en) 2007-03-28
GB2433738B (en) 2007-08-15
GB2433737A (en) 2007-07-04
GB2433738A (en) 2007-07-04
GB0703372D0 (en) 2007-03-28

Similar Documents

Publication Publication Date Title
GB2433737B (en) Optical quality diamond material
GB2400116B (en) Boron doped diamond
ATE265700T1 (en) METHOD AND SYSTEM FOR PRODUCING ACTIVE LIGHT ABSORBING LENSES
WO2002037621A3 (en) Tunable controlled laser array
EP1094040A3 (en) Silica glass optical material for excimer laser and excimer lamp, and method for producing the same
WO2002014925A3 (en) Lamp structure, having elliptical reflectors, for uniformly irradiating surfaces of optical fiber and method of use thereof
CA2169785A1 (en) Saturable bragg reflector
EP1315027A3 (en) Optical converting method using a single-crystal lithium tetraborate
CA2470280A1 (en) Electromagnetic radiation attenuating and scattering member with improved thermal stability
HK1064742A1 (en) Method for producing light of a given polarisationstate
EP1035084A3 (en) Synthetic fused silica glass member
WO2004083133A3 (en) Apparatus for cutting glass plate
WO2004078663A3 (en) Optical synthetic quartz glass and method for producing the same
JPH01201976A (en) Manufacture and oscillation of diamond solid laser element
WO2005045476A3 (en) Apparatus for combining multiple lasers and methods of use
KR100870330B1 (en) High repetition rate eximer laser system
WO2005031396A3 (en) Methods for manufacturing volume bragg grating elements
KR860700375A (en) Raman laser with single reflector
DE59802905D1 (en) GLASS WITH ARTIFICIAL ISOTOPE DISTRIBUTION FOR LIGHTWAVE GUIDES
Karlov et al. Optical materials for CO2 lasers
Vydra et al. Improved all-silica fibers for deep-UV applications
WO2005027209A3 (en) Multiple zone structure capable of light radiation annealing and method using said structure
AU2003272734A1 (en) Method and apparatus for determining the wavelength of an input light beam
GB0323905D0 (en) Control of output beam divergence in a semiconductor waveguide device
AU2003253359A1 (en) Semiconductor laser device

Legal Events

Date Code Title Description
732E Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977)

Free format text: REGISTERED BETWEEN 20140710 AND 20140716

PE20 Patent expired after termination of 20 years

Expiry date: 20231119