WO2023218680A1 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
WO2023218680A1
WO2023218680A1 PCT/JP2022/039068 JP2022039068W WO2023218680A1 WO 2023218680 A1 WO2023218680 A1 WO 2023218680A1 JP 2022039068 W JP2022039068 W JP 2022039068W WO 2023218680 A1 WO2023218680 A1 WO 2023218680A1
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WO
WIPO (PCT)
Prior art keywords
recess
power module
semiconductor device
cooling surface
heat spreader
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2022/039068
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English (en)
French (fr)
Japanese (ja)
Inventor
一貴 新
隆一 石井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to DE112022007183.4T priority Critical patent/DE112022007183T5/de
Priority to US18/840,211 priority patent/US20250183117A1/en
Priority to CN202280095557.0A priority patent/CN119137734A/zh
Priority to JP2024520245A priority patent/JP7819301B2/ja
Publication of WO2023218680A1 publication Critical patent/WO2023218680A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of AC power input into DC power output; Conversion of DC power input into AC power output
    • H02M7/003—Constructional details, e.g. physical layout, assembly, wiring or busbar connections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/20—Arrangements for cooling
    • H10W40/22—Arrangements for cooling characterised by their shape, e.g. having conical or cylindrical projections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/20—Arrangements for cooling
    • H10W40/25—Arrangements for cooling characterised by their materials
    • H10W40/255—Arrangements for cooling characterised by their materials having a laminate or multilayered structure, e.g. direct bond copper [DBC] ceramic substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/611—Insulating or insulated package substrates; Interposers; Redistribution layers for connecting multiple chips together
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • H10W74/114—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed by a substrate and the encapsulations

Definitions

  • This application relates to a semiconductor device.
  • a configuration of a semiconductor device is disclosed in which a bonding material including a solder material has a low thermal resistance (see, for example, Patent Document 1).
  • a plating layer such as nickel plating or copper plating is provided on the surface of the power module to be bonded to the cooler to improve solder wettability and to improve the reliability of the bond between the power module and the cooler.
  • the aim is to improve the properties and lower the thermal resistance of the bonding material.
  • solder wettability can be improved.
  • a semiconductor device provided with a plating layer it is necessary to perform a soldering method using formic acid reduction equipment or a vacuum soldering method using a highly active flux.
  • variations occur in the solder wettability of the bonding material containing the solder material.
  • the resulting variation in solder wettability causes solder voids.
  • gas is generated from the organic components contained in the plating layer at the temperature at which the solder melts, and when the gas is not discharged to the outside, it becomes a solder void.
  • solder voids occur between a semiconductor element and a cooler, cooling of the semiconductor element is inhibited by the solder voids, and thermal resistance increases, so there is a concern that the quality of the semiconductor device may deteriorate.
  • the present application aims to improve the bonding quality of a bonding material containing a solder material and to obtain a semiconductor device that achieves low thermal resistance.
  • a semiconductor device disclosed in the present application includes a power module having a plurality of semiconductor elements, a cooling surface, and a cooling surface in which the power module is thermally connected to the cooling surface via a bonding material having a solder material.
  • the plurality of semiconductor elements When viewed in the direction perpendicular to the cooling surface, the plurality of semiconductor elements are arranged at positions that do not overlap with each other, and the cooling surface has a recess, and when viewed in the direction perpendicular to the cooling surface, the plurality of semiconductor elements are arranged at positions that do not overlap each other.
  • the recess is arranged at a position that overlaps with the bonding material provided between the power module and the power module and does not overlap with the plurality of semiconductor elements.
  • the semiconductor device includes a power module having a plurality of semiconductor elements and a cooling surface, and the power module is thermally connected to the cooling surface via a bonding material having a solder material.
  • the plurality of semiconductor elements are arranged at positions that do not overlap with each other, the cooling surface has a recess, and the cooling surface is provided between the cooling surface and the power module.
  • the recess is placed in a position that overlaps the bonding material used and does not overlap multiple semiconductor elements, so when the power module and the cooler are bonded together using the bonding material, the recess will overlap the bonding material between the power module and the cooler.
  • the heat resistance of the bonding material can be reduced.
  • FIG. 1 is a plan view schematically showing a semiconductor device according to a first embodiment
  • FIG. 2 is a cross-sectional view of the semiconductor device taken along the line AA in FIG. 1.
  • FIG. 3 is a cross-sectional view schematically showing another semiconductor device according to the first embodiment.
  • FIG. FIG. 2 is a cross-sectional view schematically showing a semiconductor device according to a second embodiment.
  • FIG. 3 is a cross-sectional view schematically showing a semiconductor device according to a third embodiment.
  • FIG. 7 is a plan view schematically showing a semiconductor device according to a fourth embodiment.
  • FIG. 7 is a plan view schematically showing a semiconductor device according to a fifth embodiment.
  • 8 is a cross-sectional view of the semiconductor device taken along the line BB in FIG. 7.
  • FIG. 12 is a plan view schematically showing another semiconductor device according to Embodiment 5.
  • FIG. 12 is a cross-sectional view schematically showing a semiconductor device according to a sixth embodiment.
  • FIG. 1 is a plan view schematically showing the semiconductor device 100 according to the first embodiment, showing only the outer shape of the sealing resin 13, and
  • FIG. 2 is a plan view showing the outline of the semiconductor device 100 according to the first embodiment.
  • the semiconductor device 100 is a device that converts input current from direct current to alternating current, alternating current to direct current, or input voltage to a different voltage, for example.
  • the semiconductor device 100 includes a power module 101 having a plurality of semiconductor elements and a cooler 14.
  • the cooler 14 has a cooling surface 20, and the power module 101 is thermally connected to the cooling surface 20 via a bonding material 15 having a solder material.
  • the power module 101 and the cooler 14 are joined and integrated to form the semiconductor device 100.
  • a power module 101 includes first semiconductor elements 1 and 2 and second semiconductor elements 5 and 6.
  • the first semiconductor element is formed from the two first semiconductor elements 1 and 2
  • the second semiconductor element is formed from the two second semiconductor elements 5 and 6, but the invention is not limited to this.
  • each of the first semiconductor element and the second semiconductor element may be composed of one semiconductor element.
  • the power module 101 includes first semiconductor elements 1 and 2, a first heat spreader 3, second semiconductor elements 5 and 6, a second heat spreader 7, an insulating material 11, a copper plate 12, and a sealing material. It has resin 13.
  • the first semiconductor elements 1 and 2 are electrically connected to one surface of the first heat spreader 3 by a chip bonding material (not shown).
  • the second semiconductor elements 5 and 6 are electrically connected to one surface of the second heat spreader 7 by a chip bonding material (not shown).
  • the second heat spreader 7 is arranged on the same plane as the first heat spreader 3 and spaced apart from each other. For example, a sintered material made of solder, Ag nanoparticles, or Cu nanoparticles is used as the chip bonding material.
  • One surface of the insulating material 11 is thermally connected to the other surface of the first heat spreader 3 and the other surface of the second heat spreader 7, as shown in FIG.
  • One surface of the copper plate 12 is thermally connected to the other surface of the insulating material 11.
  • the sealing resin 13 is attached to the first heat spreader 3, the second heat spreader 7, the first semiconductor elements 1 and 2, the second semiconductor elements 5 and 6, and the other side of the copper plate 12 is exposed. Cover the insulating material 11.
  • the heat generated when the semiconductor element operates is transmitted in this order to the chip bonding material, the first heat spreader 3 and the second heat spreader 7, the insulating material 11, and the copper plate 12, and then to the cooling surface 20 via the bonding material 15. The heat is transmitted to and radiated from the cooler 14.
  • the power module 101 has a configuration called a 2-in-1 module, and as shown in FIG. 1, it includes a first semiconductor element 1 and a second semiconductor element 5 as switching elements, and a rectifier The first semiconductor element 2 and the second semiconductor element 6 are connected in antiparallel, and have two element pairs.
  • the configuration of the power module 101 is not limited to this, and a required number of first semiconductor elements and second semiconductor elements can be mounted depending on the application in which the semiconductor device 100 is used.
  • the power module 101 includes a first lead frame 4, a second lead frame 8, a third lead frame 9, and a fourth lead frame 10.
  • the structure of the lead frame is not limited to this, and if the number of mounted semiconductor elements changes as described above, the structure of the lead frame may be changed according to the number of mounted semiconductor elements.
  • the first lead frame 4 is electrically connected to one surface of the first heat spreader 3 by a lead bonding material (not shown), and the other end is exposed from the sealing resin 13.
  • the second lead frame 8 is connected to one surface of the first semiconductor elements 1 and 2 by a chip bonding material (not shown) and to one surface of the second heat spreader 7 by a lead bonding material (not shown). Connect electrically.
  • the third lead frame 9 has one end electrically connected to one surface of the second semiconductor elements 5 and 6 by a chip bonding material (not shown), and the other end exposed from the sealing resin 13. .
  • One end of the fourth lead frame 10 is electrically connected to one surface of the second heat spreader 7 by a lead bonding material (not shown), and the other end is exposed from the sealing resin 13.
  • the lead bonding material is made of, for example, a bonding material containing a solder material in order to ensure electrical connection between the lead frame and the heat spreader.
  • the bonding is not limited to the lead bonding material, and metal bonding using ultrasonic waves or laser may also be used.
  • the first semiconductor element 1 and the second semiconductor element 5 include, for example, an IGBT (Insulated Gate Bipolar Transistor) or a MOSFET (Metal Oxide Semiconductor Field Effect Transistor). eld Effect Transistor) etc.
  • a power semiconductor device which is a semiconductor device for power control, is used.
  • a switching element such as an IGBT that does not have a parasitic diode is used, and a rectifying element such as a freewheeling diode is provided in parallel.
  • An integrated RC-IGBT Reverse Conducting IGBT
  • each of the first semiconductor element and the second semiconductor element is composed of one semiconductor element.
  • the first semiconductor elements 1, 2 and the second semiconductor elements 5, 6 are formed on a semiconductor substrate made of a material such as silicon, silicon carbide (SiC), or gallium nitride (GaN), and have a band gap larger than that of silicon.
  • a semiconductor substrate made of a material such as silicon, silicon carbide (SiC), or gallium nitride (GaN)
  • Wide bandgap semiconductor devices using materials such as silicon carbide with wide bands can be used.
  • the amount of time change di/dt of current generated during switching can be made larger than that of an element formed of silicon.
  • wide gap semiconductor elements have low on-resistance, high allowable current density, low power loss, and low heat generation, so the chip area can be reduced. Since the chip area is reduced, the power module 101 can be downsized.
  • the first heat spreader 3, the second heat spreader 7, the first lead frame 4, the second lead frame 8, the third lead frame 9, and the fourth lead frame 10 are made of a metal material with excellent conductivity. will be produced.
  • metals with excellent conductivity copper is a particularly desirable material from the viewpoints of electrical resistance, workability, cost, and the like.
  • the copper material here refers to pure copper or a copper alloy whose main component is copper.
  • the sealing resin 13 is arranged between the first heat spreader 3, the second heat spreader 7, the first lead frame 4, the second lead frame 8, and the third lead frame so that the thermal deformation force caused by the difference in linear expansion coefficient does not become large. It is preferable to use a resin having a linear expansion coefficient close to that of the lead frame 9 and the fourth lead frame 10. Therefore, since the linear expansion coefficient of pure copper is 16 [ppm/K] to 17 [ppm/K], the linear expansion coefficient of the sealing resin 13 is also 15 [ppm/K] to 18 [ppm/K]. This is desirable.
  • the sealing resin 13 is, for example, an inorganic filler contained in a thermosetting resin such as an epoxy resin.
  • the insulating material 11 has a material that ensures electrical insulation between the semiconductor element side and the copper plate 12 side, and when the first semiconductor elements 1, 2 and the second semiconductor elements 5, 6 operate. Heat dissipation performance is required to transmit the generated heat to the cooler 14 and dissipate it.
  • the insulating material 11 is, for example, a thermosetting resin filled with an inorganic filler as an inorganic filler having high thermal conductivity and insulating properties, and the thermosetting reaction of the resin causes the first heat spreader 3 and the second The heat spreader 7 and the copper plate 12 are bonded together.
  • the insulating material 11 is made of a material that has heat dissipation properties, insulation properties, and adhesive properties, and includes inorganic particles such as ceramic particles with high thermal conductivity in a thermosetting resin such as epoxy resin. It has a structure containing powder filler. Ceramic particles such as aluminum nitride, silicon nitride, boron nitride, aluminum oxide (alumina), silicon oxide (silica), magnesium oxide, zinc oxide, and titanium oxide are suitable as inorganic fillers with high thermal conductivity. Note that any one of these inorganic fillers may be used alone, or a mixture of multiple types may be used.
  • the cooler 14 in which the power module 101 is thermally connected to the cooling surface 20 is required to have high cooling performance.
  • the cooler 14 includes a plurality of radiation fins (not shown) to efficiently dissipate the heat transferred from the power module 101.
  • the radiation fins are provided, for example, in a portion of the cooler 14 on the side opposite to the power module 101 side.
  • the cooler 14 may be either a liquid cooling type or an air cooling type cooler.
  • the cooler 14 is constituted by a flat metal heat sink, but it is not limited to this, and may be a liquid-cooled type cooler with a flow path through which a cooling liquid flows. .
  • the cooler 14 is made of any material selected from the group consisting of copper, aluminum, copper, and an alloy of aluminum, for example.
  • the material for the cooler 14 is preferably aluminum or an aluminum alloy, which is an alloy containing aluminum, because it is lightweight and has excellent workability.
  • the weight of the semiconductor device 100 can be reduced. Furthermore, the productivity of the semiconductor device 100 can be improved.
  • the other surface of the copper plate 12 of the power module 101 exposed from the sealing resin 13 is thermally connected to the cooling surface 20 of the cooler 14 by a bonding material 15.
  • the cooling surface 20 of the cooler 14 is required to have high solder wettability. Therefore, it is desirable that the material of the cooler 14 be copper, which has solder wettability.
  • the material of the cooler 14 be copper, which has solder wettability.
  • the plated layer 16 with solder wettability is provided as the cooling surface 20 of the cooler 14, and the material of the plated layer 16 is It is best to use copper.
  • a nickel plating layer (not shown) may be provided as a base plating layer in order to improve plating adhesion and surface solder wettability.
  • the material of the cooler 14 is aluminum or aluminum alloy, and as shown in FIG. 2, a plating layer 16 is provided on the power module 101 side of the cooler 14. Therefore, the cooling surface 20 is the surface of the plating layer 16 that has solder wettability. That is, among the bonding surfaces where the power module 101 and the cooler 14 are bonded by the bonding material 15, one bonding surface is the other surface of the copper plate 12, and the other bonding surface, the cooling surface 20, is the bonding surface of the cooler 14. This is a plating layer 16 provided on the surface.
  • the recess 17 of the cooling surface 20 which is the main part of the present application, will be explained.
  • the first semiconductor elements 1 and 2 and the second semiconductor elements 5 and 6, which are a plurality of semiconductor elements, are arranged at positions that do not overlap with each other.
  • the cooling surface 20 has a recess 17 .
  • the bonding material 15 provided between the cooling surface 20 and the power module 101 overlaps with the first semiconductor elements 1, 2 and the second semiconductor elements 5, 6.
  • the recesses 17 are arranged at non-overlapping positions.
  • the recess 17 penetrates through the plating layer 16, and the member below the plating layer 16 is exposed.
  • the exposed lower member has lower solder wettability than the plating layer 16.
  • the exposed portion of the lower member is the recessed surface 18.
  • the exposed lower member is aluminum or an aluminum alloy.
  • solder voids When the plating layer 16 is provided, gas is generated from the organic components contained in the plating layer 16 at the temperature at which the solder melts, and when the gas is not discharged to the outside, it becomes a solder void.
  • solder voids occur between the semiconductor element and the cooler 14, the solder voids impede cooling of the semiconductor element and increase thermal resistance, resulting in a decline in the quality of the semiconductor device 100.
  • Such voids are not limited to cases where they occur from the plating layer 16, but if there is a gap between the bonding material 15 and another member when the bonding material 15 is melted, the void will be formed in the gap. It may also be the cause.
  • the recess 17 By providing the recess 17 on the cooling surface 20 at a position that does not overlap with the first semiconductor elements 1 and 2 and the second semiconductor elements 5 and 6, the recess 17 can connect the power module 101 and the cooler 14 with the bonding material 15. It becomes a path for discharging gas generated between the power module 101 and the cooler 14 to the outside when they are joined. Therefore, even if solder voids occur, the solder voids are discharged to the outside through the recess 17. Since the solder voids are discharged to the outside through the recess 17, voids remain between the first semiconductor elements 1, 2 and the second semiconductor elements 5, 6 and the cooler 14 when the bonding material 15 solidifies. can be suppressed.
  • the first semiconductor elements 1, 2 and the second semiconductor element 5 , 6 and the cooler 14 are filled with the bonding material 15 and the plating layer 16. Therefore, the bonding quality of the bonding material 15 including solder material can be improved, and the thermal resistance of the bonding material 15 can be reduced. It can be realized. Furthermore, since the space between the first semiconductor elements 1, 2 and the second semiconductor elements 5, 6 and the cooler 14 is filled with the bonding material 15 and the plating layer 16, the heat generated in each semiconductor element can be efficiently dissipated. It can be easily transmitted to the cooler 14.
  • the recess 17 overlaps with the first heat spreader 3 and the second heat spreader 7 between the first heat spreader 3 and the second heat spreader 7 when viewed in a direction perpendicular to the cooling surface 20. It is placed in a position that does not. With this configuration, there is no recess 17 between the first heat spreader 3 and the second heat spreader 7 and the cooler 14, and there is no recess 17 between the first heat spreader 3 and the second heat spreader 7 and the cooler 14. Since the spaces are filled with the bonding material 15 and the plating layer 16, heat generated not only in each semiconductor element but also in each lead frame and each heat spreader can be efficiently transferred to the cooler 14.
  • the arrangement of the recesses 17 is not limited to this, and the recesses 17 can be placed at positions where heat transfer inhibition by the recesses 17 is suppressed and the recesses 17 do not overlap with the first semiconductor elements 1 and 2 and the second semiconductor elements 5 and 6. It may be placed in another area. Even when the recessed portion 17 is arranged in another region, it is possible to reduce the thermal resistance of the bonding material 15 and suppress solder voids.
  • the exposed lower member is made of aluminum or an aluminum alloy, and has lower solder wettability than the plating layer 16.
  • the recess 17 is a groove that extends to the outside of the bonding material 15 provided between the cooling surface 20 and the power module 101 when viewed in a direction perpendicular to the cooling surface 20.
  • the recessed portion 17 has a portion that extends to the outside of the bonding material 15, gas can be easily discharged to the outside.
  • the arrangement of the recess 17 is not limited to a configuration in which it extends to the outside of the bonding material 15, and may be arranged only inside the bonding material 15.
  • gas cannot be discharged to the outside, but it is possible to discharge the gas into the recess 17.
  • the recess 17 is arranged only inside the bonding material 15, it is possible to suppress moisture, foreign matter, and the like from entering from the outside into the semiconductor device 100 through the recess 17.
  • the recess 17 can be formed by cutting and removing a portion of the plating layer 16 in the area where the recess 17 is to be formed. By forming the recess 17 in this manner, the recess 17 can be easily formed at low cost. In this embodiment, the recess 17 penetrates the plating layer 16 and exposes the lower member of the plating layer 16. By using this formation method, the recess 17 can be easily formed, so that the semiconductor device 100 productivity can be improved.
  • the method for forming the recess 17 is not limited to this, but a method may be used in which the portion where the recess 17 is to be formed is masked during the plating treatment, and the portion of the cooler 14 excluding the portion where the recess 17 is to be formed is plated. I don't mind.
  • the material of the cooler 14 is aluminum or aluminum alloy, and the plating layer 16 is provided on the power module 101 side of the cooler 14, but the material is not limited to this.
  • a copper alloy may be used, and a plating layer 16 containing nickel or tin may be provided on the power module 101 side of the cooler 14.
  • FIG. 3 is a cross-sectional view schematically showing another semiconductor device 100 according to the first embodiment, and is a cross-section of another semiconductor device 100 taken at the same position as FIG. In this case, since the plating layer 16 is not provided, no gas is generated from the plating layer 16. However, if there is a gap between the bonding material 15 and another member when the bonding material 15 is melted, the gap may cause voids. Can be discharged to the outside. In order to reliably form a void discharge path in the recess 17, an aluminum layer may be formed on the recess surface 18 of the recess 17 by sputtering or the like.
  • the power module 101 has the first semiconductor elements 1 and 2 and the second semiconductor elements 5 and 6, and the power module 101 has the cooling surface 20.
  • First semiconductor elements 1 and 2 are arranged on the same plane with a first heat spreader 3 electrically connected to one surface and spaced apart from each other on the same plane as the first heat spreader 3, and a second semiconductor element 5 , 6 are electrically connected to one surface of the power module 101, and the recess 17 is connected to the first heat spreader 3 when viewed in a direction perpendicular to the cooling surface 20.
  • a first heat spreader 3 electrically connected to one surface and spaced apart from each other on the same plane as the first heat spreader 3
  • a second semiconductor element 5 , 6 are electrically connected to one surface of the power module 101, and the recess 17 is connected to the first heat spreader 3 when viewed in a direction perpendicular to the cooling surface 20.
  • the cooler 14 is located between the second heat spreader 7 and the first heat spreader 3 and the second heat spreader 7. Since the concave portion 17 is not provided, heat generated not only in each semiconductor element but also in each lead frame and each heat spreader can be efficiently transferred to the cooler
  • the cooling surface 20 is the surface of the plating layer 16 that has solder wettability, and the recess 17 penetrates the plating layer 16 and exposes the lower part of the plating layer 16, the power module can be formed with high bonding quality. 101 can be soldered to the cooler 14, and the recess 17 can be easily formed at low cost.
  • the exposed lower member has lower solder wettability than the plating layer 16, the bonding material 15 and the recess surface 18 will not be bonded in the recess 17, so a path for discharging gas to the outside will be provided in the recess 17. It can be formed reliably. Further, when the exposed lower member is made of aluminum or an aluminum alloy, the weight of the semiconductor device 100 can be reduced, and the productivity of the semiconductor device 100 can be improved.
  • the recess 17 is a groove that extends to the outside of the bonding material 15 provided between the cooling surface 20 and the power module 101 when viewed in the direction perpendicular to the cooling surface 20, the recess 17 Since it has a portion extending further outward than 15, gas can be easily discharged to the outside.
  • FIG. 4 is a cross-sectional view schematically showing the semiconductor device 100 according to the second embodiment, and is a cross-sectional view of the semiconductor device 100 taken at the same position as FIG.
  • the cross-sectional shape of the recess 17 is different from that in the first embodiment.
  • the recess 17 is also formed in the exposed lower member.
  • the recess surface 18 of the recess 17 is provided closer to the cooler 14 than the portion of the plating layer 16 on the cooler 14 side.
  • the cross-sectional area of the recess 17 can be made larger than the cross-sectional area of the recess 17 shown in the first embodiment. Since the cross-sectional area of the recess 17 is increased, gas generated when the power module 101 and the cooler 14 are bonded using the bonding material 15 can be more efficiently discharged to the outside.
  • the cross-sectional shape of the recess 17 is rectangular, but the cross-sectional shape of the recess 17 is not limited to a rectangle. Since the recess 17 only has to function as a path for discharging gas generated between the power module 101 and the cooler 14 to the outside, the cross-sectional shape of the recess 17 is V-shaped or U-shaped. It does not matter if the shape is as follows.
  • the recess 17 can be formed by cutting and removing the plating layer 16 and the cooler 14 in the area where the recess 17 is to be formed. By forming the recess 17 in this manner, the recess 17 can be easily formed at low cost.
  • the method for forming the recesses 17 is not limited to this, but a groove that will become the recess 17 is provided in advance in the part of the cooler 14 where the recess 17 is to be formed, and a masking is applied to the groove that will form the recess 17 during the plating process.
  • a method may be used in which a portion of the cooler 14 excluding the portion where the recess 17 is formed is plated.
  • FIG. 5 is a cross-sectional view schematically showing the semiconductor device 100 according to the third embodiment, and is a cross-sectional view of the semiconductor device 100 taken at the same position as FIG.
  • a semiconductor device 100 according to the third embodiment has a configuration in which a power module 101 is provided with a recess 19 on the module side.
  • the surface of the power module 101 on the bonding material 15 side has a recess 19 on the module side.
  • the recess 19 on the module side is arranged at a position overlapping the bonding material 15 provided between the cooling surface 20 and the power module 101 and not overlapping the plurality of semiconductor elements. ing.
  • the recess 19 on the module side is arranged between the first semiconductor elements 1 and 2 and the second semiconductor elements 5 and 6.
  • the concave portion 19 on the module side is a path for exhausting gas generated when the power module 101 and the cooler 14 are bonded using the bonding material 15 to the outside.
  • a path for discharging gas to the outside can be provided. Since a gas discharge path to the outside is further formed, the gas generated when power module 101 and cooler 14 are joined can be discharged to the outside more efficiently than in the first embodiment.
  • the module-side recess 19 is provided on the power module 101 side of the recess 17, but the arrangement of the module-side recess 19 is not limited to this. If necessary, the recess 19 on the module side may be arranged at a different position.
  • the number of module-side recesses 19 is not limited to one, and a plurality of module-side recesses 19 may be provided.
  • the cross-sectional shape of the module-side recess 19 is rectangular, but the cross-sectional shape of the module-side recess 19 is not limited to a rectangle. Since the recess 19 on the module side only has to function as a path for discharging gas generated between the power module 101 and the cooler 14 to the outside, the shape of the cross section of the recess 19 on the module side is as follows. , V-shape, or U-shape.
  • the recess 19 on the module side is provided in the semiconductor device 100 shown in Embodiment 1, but the present invention is not limited to this.
  • a recessed portion 19 may be provided.
  • FIG. 6 is a plan view schematically showing the semiconductor device 100 according to the fourth embodiment, in which only the outer shape of the sealing resin 13 is shown and the lead frame is omitted.
  • the semiconductor device 100 according to the fourth embodiment has a configuration in which a plurality of semiconductor elements and a plurality of recesses are provided.
  • the power module 101 has a configuration called a so-called 6-in-1 type power module.
  • first semiconductor elements 1a, 1b, and 1c are arranged in the first heat spreader 3 at intervals in the lateral direction of the first heat spreader 3, and on the lower side, the second heat spreader 7a, Second semiconductor elements 5a, 5b, and 5c are provided respectively in 7b and 7c.
  • the first semiconductor elements 1a, 1b, and 1c are provided near the center of each of the first heat spreader 3 divided into three parts in the horizontal direction.
  • the recess 17 is located between the first heat spreader 3 and the second heat spreader 7a, 7b, 7c when viewed in a direction perpendicular to the cooling surface 20. It is placed in a position that does not overlap with The recess 17a is arranged between the second heat spreaders 7a and 7b at a position that does not overlap with the second heat spreaders 7a and 7b when viewed in a direction perpendicular to the cooling surface 20.
  • the recess 17b is arranged between the second heat spreaders 7b and 7c at a position that does not overlap with the second heat spreaders 7b and 7c, when viewed in a direction perpendicular to the cooling surface 20.
  • the recess 17c is arranged between the first semiconductor elements 1a and 1b at a position that does not overlap with the first semiconductor elements 1a and 1b, when viewed in a direction perpendicular to the cooling surface 20.
  • the recess 17d is arranged between the first semiconductor elements 1b and 1c at a position that does not overlap with the first semiconductor elements 1b and 1c when viewed in a direction perpendicular to the cooling surface 20.
  • recesses are provided not only between semiconductor elements and between heat spreaders, but also between semiconductor elements that are not between heat spreaders.
  • the power module 101 and the cooler 14 are bonded together by the bonding material 15 by providing a recess between the semiconductor elements not between the heat spreaders. The gas generated during this process can be discharged to the outside more efficiently.
  • the arrangement of the recesses is not limited to the arrangement shown in FIG. A different arrangement may be used as long as the location does not overlap with the semiconductor element. Even in the case of a different arrangement, it is possible to reduce the thermal resistance of the bonding material 15 and suppress solder voids.
  • the recesses 17, 17a, 17b, 17c, and 17d extend to the outside of the bonding material 15 provided between the cooling surface 20 and the power module 101 when viewed in a direction perpendicular to the cooling surface 20. It is extending.
  • the arrangement of the recessed portion 17 is not limited to a configuration in which it extends to the outside of the bonding material 15, but may be arranged only inside the bonding material 15.
  • gas cannot be discharged to the outside, but it is possible to discharge the gas into the interior of the recesses 17, 17a, 17b, 17c, and 17d. It is.
  • the recesses 17, 17a, 17b, 17c, and 17d are arranged only inside the bonding material 15, moisture, foreign matter, etc. may enter the semiconductor device 100 from the outside through the recesses 17, 17a, 17b, 17c, and 17d. It is possible to suppress the invasion of
  • Embodiment 5 A semiconductor device 100 according to a fifth embodiment will be described. 7 is a plan view schematically showing the semiconductor device 100 according to the fifth embodiment, and FIG. 8 is a cross-sectional view of the semiconductor device 100 taken along the line BB in FIG.
  • the power module 101 has a protrusion 21 .
  • non-bonded region 23 which is a region where the bonding material 15 is not provided, at the outer periphery of the gap between the cooling surface 20 and the power module 101.
  • the recess 17 extends from the region where the bonding material 15 is provided to the non-bonded region 23 .
  • the recess 17 is also provided in a portion of the cooling surface 20 that does not overlap with the power module 101 when viewed in a direction perpendicular to the cooling surface 20 .
  • the power module 101 has a protrusion 21 that protrudes toward the recess 17 in the non-bonded region 23 .
  • one protrusion 21 is provided in each of the two non-bonding regions 23 facing the recess 17.
  • a plurality of protrusions 21 may be provided in each of the non-bonded regions 23.
  • the protrusion 21 is a portion of the sealing resin 13 that seals the components of the power module 101 that protrudes toward the recess 17.
  • the protruding portion 21 is manufactured at the same time as the components constituting the power module 101 are sealed.
  • the method for manufacturing the protrusion 21 is not limited to this.
  • a component made of a metal material or the like may be sealed together with the components constituting the power module 101, and the portion protruding from the sealing resin 13 may be used as the protruding portion 21.
  • a component that will become the protrusion 21 may be attached to the non-bonding region 23 of the sealing resin 13 facing the recess 17.
  • the protrusion 21 is made of a metal with high solder wettability and is provided adjacent to the bonding material 15, the metal and solder will get wet after the gas is discharged, causing foreign matter such as water to enter the inside of the recess 17. Intrusion can be suppressed. Note that when the protruding portion 21 is simultaneously manufactured from the sealing resin 13 when the components constituting the power module 101 are sealed, a separate component to become the protruding portion 21 is not required, thereby improving the productivity of the semiconductor device 100. can be done. Therefore, it is desirable to make the protrusion 21 from the sealing resin 13.
  • Providing the protrusion 21 in this way maintains the function of efficiently discharging the gas generated when the power module 101 and the cooler 14 are bonded using the bonding material 15 to the outside, while also being effective in the cleaning process after bonding. It is possible to suppress the cleaning liquid from entering between the power module 101 and the recess 17. By suppressing the intrusion of the cleaning liquid, it is possible to prevent the cleaning liquid from spouting out from between the power module 101 and the recess 17 during subsequent drying and from adhering to the surface of the power module 101. Since adhesion of the cleaning liquid to the surface of the power module 101 is suppressed, the insulation of the surface of the power module 101 can be improved.
  • the protrusion 21 is arranged at the center of the non-bonding region 23 in the direction in which the recess 17 extends, but the arrangement of the protrusion 21 is not limited to the center of the non-bonding region 23. As shown in FIG. 9, the protrusion 21 may be arranged at the outer end of the non-bonding region 23.
  • FIG. 9 is a plan view schematically showing another semiconductor device 100 according to the fifth embodiment. With this configuration, the area into which the cleaning liquid can enter can be reduced, so that the insulation performance in the creeping surface of the power module 101 can be further improved. Note that the closer the protrusion 21 is arranged to the outer end of the non-bonding region 23, the greater the effect of reducing the area into which the cleaning liquid can enter.
  • the height of the protrusion 21 is greater than the depth of the recess 17, and a gap is provided between the protrusion 21 and the inner surface of the recess 17.
  • FIG. 8 shows the cross-sectional shapes of the protrusion 21 and the recess 17.
  • the dimension between the top 21a of the protrusion 21 and the bottom 22 of the recess is smaller than 0.22 mm, moisture will enter but will not be discharged to the outside, so that insulation can be improved. If the dimension between the top 21a of the protrusion 21 and the bottom 22 of the recess is 0.08 mm or less, it is possible to prevent moisture from entering, so that a greater effect on improving insulation can be obtained. I can do it.
  • the shape of the longitudinal section of the protrusion 21 is rectangular, but the shape of the longitudinal section of the protrusion 21 is not limited to a rectangle.
  • the protruding portion 21 must have the function of suppressing the intrusion of cleaning liquid from the outside while maintaining the function as a path for discharging the gas generated between the power module 101 and the cooler 14 to the outside. Therefore, the shape of the longitudinal section of the protrusion 21 may be, for example, a V-shape or a U-shape.
  • the shape of the cross section of the protrusion 21 is circular, but the shape of the cross section of the protrusion 21 is not limited to a circle.
  • the protruding portion 21 must have the function of suppressing the intrusion of cleaning liquid from the outside while maintaining the function as a path for discharging the gas generated between the power module 101 and the cooler 14 to the outside. Therefore, the shape of the cross section of the protrusion 21 may be, for example, a quadrangular or hexagonal shape. Note that when the top portion 21a of the protrusion 21 is disposed inside the recess 17, the shape of the cross section of the protrusion 21 is such that the gap between the side wall of the recess 17 and the side wall of the protrusion 21 becomes smaller. , the effect of suppressing the intrusion of cleaning liquid can be increased.
  • FIG. 10 is a cross-sectional view schematically showing the semiconductor device 100 according to the sixth embodiment, and is a cross-sectional view of the semiconductor device 100 taken at the same position as FIG.
  • the semiconductor device 100 according to the sixth embodiment has a configuration in which the position of the top 21a of the protrusion 21 is defined.
  • the top portion 21a of the protrusion 21 is placed inside the recess 17, and a gap is provided between the protrusion 21 and the inner surface of the recess 17.
  • the distance between the top 21a of the protrusion 21 and the bottom 22 of the recess can be reduced. Since the distance between the top 21a of the protrusion 21 and the bottom 22 of the recess is reduced, the cleaning liquid can be removed while maintaining the function as a path for discharging the gas generated between the power module 101 and the cooler 14 to the outside. It is possible to further enhance the effect of suppressing the invasion of. Since the effect of suppressing the intrusion of the cleaning liquid is further increased, the insulation of the creeping surface of the power module 101 can be further improved.
  • the height of the protrusion 21 is greater than the depth of the recess 17, and a gap is provided between the protrusion 21 and the inner surface of the recess 17. , has the same effect as Embodiment 5.
  • the shape of the longitudinal section of the protrusion 21 is rectangular, but the shape of the longitudinal section of the protrusion 21 is not limited to a rectangle.
  • the shape of the longitudinal cross section of the protrusion 21 may be, for example, a V-shape or a U-shape.
  • the plurality of semiconductor elements are arranged at positions that do not overlap with each other,
  • the cooling surface has a recess, When viewed in a direction perpendicular to the cooling surface, the recess is arranged at a position that overlaps with the bonding material provided between the cooling surface and the power module and does not overlap with the plurality of semiconductor elements.
  • One of the two adjacently arranged semiconductor elements is the first semiconductor element, and the other is the second semiconductor element
  • the power module is the first semiconductor element; a first heat spreader to which the first semiconductor element is electrically connected to one surface; the second semiconductor element; a second heat spreader arranged at intervals on the same plane as the first heat spreader, and the second semiconductor element is electrically connected to one surface; an insulating material in which the other surface of the first heat spreader and the other surface of the second heat spreader are thermally connected to one surface; a copper plate in which the other surface of the insulating material is thermally connected to one surface; A sealing resin that covers the first heat spreader, the second heat spreader, the first semiconductor element, the second semiconductor element, and the insulating material with the other surface of the copper plate exposed.
  • the recess is disposed between the first heat spreader and the second heat spreader at a position that does not overlap with the first heat spreader and the second heat spreader, when viewed in a direction perpendicular to the cooling surface.
  • the semiconductor device according to supplementary note 1. The cooling surface is a surface of a plating layer that has solder wettability, The semiconductor device according to appendix 1 or 2, wherein the recess penetrates the plating layer and exposes a member below the plating layer.
  • the semiconductor device according to appendix 3 wherein the exposed lower member has lower solder wettability than the plating layer.
  • the surface of the power module on the side of the bonding material has a recess on the module side, When viewed in a direction perpendicular to the cooling surface, a recess on the module side is arranged at a position that overlaps with the bonding material provided between the cooling surface and the power module and does not overlap with the plurality of semiconductor elements.

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
PCT/JP2022/039068 2022-05-11 2022-10-20 半導体装置 Ceased WO2023218680A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
DE112022007183.4T DE112022007183T5 (de) 2022-05-11 2022-10-20 Halbleiter-Vorrichtung
US18/840,211 US20250183117A1 (en) 2022-05-11 2022-10-20 Semiconductor device
CN202280095557.0A CN119137734A (zh) 2022-05-11 2022-10-20 半导体装置
JP2024520245A JP7819301B2 (ja) 2022-05-11 2022-10-20 半導体装置

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JP2022-077863 2022-05-11
JP2022077863 2022-05-11

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JP (1) JP7819301B2 (https=)
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WO (1) WO2023218680A1 (https=)

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004356261A (ja) * 2003-05-28 2004-12-16 Mitsubishi Electric Corp 電力用半導体装置
JP2005039081A (ja) * 2003-07-16 2005-02-10 Mitsubishi Electric Corp 半導体モジュールの放熱板
JP2005109374A (ja) * 2003-10-02 2005-04-21 Fuji Electric Device Technology Co Ltd 半導体装置
JP2007158156A (ja) * 2005-12-07 2007-06-21 Mitsubishi Electric Corp 半導体モジュール
WO2012093509A1 (ja) * 2011-01-07 2012-07-12 富士電機株式会社 半導体装置およびその製造方法
JP2013123016A (ja) * 2011-12-12 2013-06-20 Denso Corp 半導体装置
JP2013187396A (ja) * 2012-03-08 2013-09-19 Daikin Ind Ltd パワーモジュール

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006351927A (ja) 2005-06-17 2006-12-28 Auto Network Gijutsu Kenkyusho:Kk 半導体装置、回路基板及び電気接続箱

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004356261A (ja) * 2003-05-28 2004-12-16 Mitsubishi Electric Corp 電力用半導体装置
JP2005039081A (ja) * 2003-07-16 2005-02-10 Mitsubishi Electric Corp 半導体モジュールの放熱板
JP2005109374A (ja) * 2003-10-02 2005-04-21 Fuji Electric Device Technology Co Ltd 半導体装置
JP2007158156A (ja) * 2005-12-07 2007-06-21 Mitsubishi Electric Corp 半導体モジュール
WO2012093509A1 (ja) * 2011-01-07 2012-07-12 富士電機株式会社 半導体装置およびその製造方法
JP2013123016A (ja) * 2011-12-12 2013-06-20 Denso Corp 半導体装置
JP2013187396A (ja) * 2012-03-08 2013-09-19 Daikin Ind Ltd パワーモジュール

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US20250183117A1 (en) 2025-06-05
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CN119137734A (zh) 2024-12-13
JP7819301B2 (ja) 2026-02-24

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