DE112022007183T5 - Halbleiter-Vorrichtung - Google Patents

Halbleiter-Vorrichtung Download PDF

Info

Publication number
DE112022007183T5
DE112022007183T5 DE112022007183.4T DE112022007183T DE112022007183T5 DE 112022007183 T5 DE112022007183 T5 DE 112022007183T5 DE 112022007183 T DE112022007183 T DE 112022007183T DE 112022007183 T5 DE112022007183 T5 DE 112022007183T5
Authority
DE
Germany
Prior art keywords
recessed portion
power module
semiconductor device
heat spreader
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE112022007183.4T
Other languages
German (de)
English (en)
Inventor
Kazuki ARATA
Ryuichi Ishii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of DE112022007183T5 publication Critical patent/DE112022007183T5/de
Pending legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00Conversion of AC power input into DC power output; Conversion of DC power input into AC power output
    • H02M7/003Constructional details, e.g. physical layout, assembly, wiring or busbar connections
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00Arrangements for thermal protection or thermal control
    • H10W40/20Arrangements for cooling
    • H10W40/22Arrangements for cooling characterised by their shape, e.g. having conical or cylindrical projections
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00Arrangements for thermal protection or thermal control
    • H10W40/20Arrangements for cooling
    • H10W40/25Arrangements for cooling characterised by their materials
    • H10W40/255Arrangements for cooling characterised by their materials having a laminate or multilayered structure, e.g. direct bond copper [DBC] ceramic substrates
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60Insulating or insulated package substrates; Interposers; Redistribution layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/611Insulating or insulated package substrates; Interposers; Redistribution layers for connecting multiple chips together
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/10Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • H10W74/114Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed by a substrate and the encapsulations

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
DE112022007183.4T 2022-05-11 2022-10-20 Halbleiter-Vorrichtung Pending DE112022007183T5 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2022-077863 2022-05-11
JP2022077863 2022-05-11
PCT/JP2022/039068 WO2023218680A1 (ja) 2022-05-11 2022-10-20 半導体装置

Publications (1)

Publication Number Publication Date
DE112022007183T5 true DE112022007183T5 (de) 2025-04-30

Family

ID=88729962

Family Applications (1)

Application Number Title Priority Date Filing Date
DE112022007183.4T Pending DE112022007183T5 (de) 2022-05-11 2022-10-20 Halbleiter-Vorrichtung

Country Status (5)

Country Link
US (1) US20250183117A1 (https=)
JP (1) JP7819301B2 (https=)
CN (1) CN119137734A (https=)
DE (1) DE112022007183T5 (https=)
WO (1) WO2023218680A1 (https=)

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004356261A (ja) 2003-05-28 2004-12-16 Mitsubishi Electric Corp 電力用半導体装置
JP2005039081A (ja) 2003-07-16 2005-02-10 Mitsubishi Electric Corp 半導体モジュールの放熱板
JP4214880B2 (ja) 2003-10-02 2009-01-28 富士電機デバイステクノロジー株式会社 半導体装置
JP2006351927A (ja) 2005-06-17 2006-12-28 Auto Network Gijutsu Kenkyusho:Kk 半導体装置、回路基板及び電気接続箱
JP4549287B2 (ja) 2005-12-07 2010-09-22 三菱電機株式会社 半導体モジュール
CN103329267B (zh) 2011-01-07 2016-02-24 富士电机株式会社 半导体器件及其制造方法
JP2013123016A (ja) 2011-12-12 2013-06-20 Denso Corp 半導体装置
JP6003109B2 (ja) 2012-03-08 2016-10-05 ダイキン工業株式会社 パワーモジュール

Also Published As

Publication number Publication date
JPWO2023218680A1 (https=) 2023-11-16
US20250183117A1 (en) 2025-06-05
WO2023218680A1 (ja) 2023-11-16
CN119137734A (zh) 2024-12-13
JP7819301B2 (ja) 2026-02-24

Similar Documents

Publication Publication Date Title
DE102013207804B4 (de) Verfahren zum Herstellen eines Leistungsmoduls mit mittels Lichtbogenschweissen direkt verbundenen, wärmeleitenden Strukturen
DE102012206596B4 (de) Halbleitervorrichtung
DE112009000447B4 (de) Halbleitervorrichtung und Verfahren zu ihrer Herstellung
DE102012222879B4 (de) Leistungshalbleitermodul und Verfahren zu seiner Herstellung
DE112012007339B3 (de) Halbleitermodul und Verfahren zur Herstellung des Halbleitermoduls
DE102011077543B4 (de) Halbleitervorrichtung
EP4026166B1 (de) Elektronikmodul mit einer pulsierenden heatpipe
DE112019000184B4 (de) Halbleitervorrichtung
DE112014006397B4 (de) Leistungshalbleitermodul und Leistungseinheit
DE102009011233A1 (de) Halbleitervorrichtung und Verfahren zu ihrer Herstellung
DE112018006370B4 (de) Halbleitereinrichtung
DE112015000660T5 (de) Leistungsmodul und Herstellungsverfahren dafür
DE10251248A1 (de) Leistungshalbleitervorrichtung
DE102021200016B4 (de) Halbleitermodul und verfahren zum herstellen eines halbleitermoduls
DE102018104509A1 (de) Halbleitervorrichtung
DE112015000446T5 (de) Wasserdichte elektronische Vorrichtung und Verfahren zu ihrer Herstellung
DE112014005694T5 (de) Halbleitermodul
DE102021209589A1 (de) Halbleitervorrichtung
DE112020000206T5 (de) Halbleitermodul-Schaltkreisstruktur
DE102019109275A1 (de) Halbleitervorrichtung
DE112016006331B4 (de) Halbleitervorrichtung
DE112017008226T5 (de) Halbleitervorrichtung
DE102015115132A1 (de) Halbleitermodul mit integrierter Stift- oder Rippenkühlstruktur
DE102015223300B4 (de) Halbleitervorrichtung
DE112015005593B4 (de) Leistungsmodul

Legal Events

Date Code Title Description
R012 Request for examination validly filed
R079 Amendment of ipc main class

Free format text: PREVIOUS MAIN CLASS: H01L0023360000

Ipc: H10W0040200000