WO2023098179A1 - 高纯低铀亚微米级球形二氧化硅微粉的制备方法 - Google Patents

高纯低铀亚微米级球形二氧化硅微粉的制备方法 Download PDF

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WO2023098179A1
WO2023098179A1 PCT/CN2022/115378 CN2022115378W WO2023098179A1 WO 2023098179 A1 WO2023098179 A1 WO 2023098179A1 CN 2022115378 W CN2022115378 W CN 2022115378W WO 2023098179 A1 WO2023098179 A1 WO 2023098179A1
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acid solution
uranium
preparation
powder
purity
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French (fr)
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张建平
曹家凯
李晓冬
阮建军
姜兵
朱刚
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江苏联瑞新材料股份有限公司
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Priority to KR1020237018225A priority Critical patent/KR20230097133A/ko
Priority to JP2022573715A priority patent/JP7576637B2/ja
Publication of WO2023098179A1 publication Critical patent/WO2023098179A1/zh

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    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/113—Silicon oxides; Hydrates thereof
    • C01B33/12—Silica; Hydrates thereof, e.g. lepidoic silicic acid
    • C01B33/18—Preparation of finely divided silica neither in sol nor in gel form; After-treatment thereof
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/30—Particle morphology extending in three dimensions
    • C01P2004/32—Spheres
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/60—Particles characterised by their size
    • C01P2004/61—Micrometer sized, i.e. from 1-100 micrometer
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/60—Particles characterised by their size
    • C01P2004/62—Submicrometer sized, i.e. from 0.1-1 micrometer
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/80—Compositional purity
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E30/00—Energy generation of nuclear origin
    • Y02E30/30—Nuclear fission reactors

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  • the invention belongs to the technical field of preparation of heat-conducting fillers, and relates to a preparation method of high-purity and low-uranium submicron spherical silica powder.
  • Chinese patent application CN101570332A adopts organic silicon source to make silica sol, and obtains spherical silica powder with U ⁇ 1ppm through granulation and other processes.
  • Chinese patent application CN104556076A adopts organic silane purification, emulsification and other processes to obtain spherical silicon micropowder without alpha rays.
  • the above method mainly uses high-purity organosilicon source and solvent to produce high-purity and low-uranium spherical silicon micropowder through chemical synthesis, which has the problems of high energy consumption, heavy pollution and high cost.
  • Chinese patent application CN 112591756A adopts natural quartz with a low uranium content of about 1 ppb, and produces a product with a uranium content below 1 ppb through flame combustion.
  • this method is only suitable for the production of micron-sized spherical silica powder, and submicron-sized products cannot be obtained in one step, and can only be obtained through complex processes such as continuous classification.
  • Chinese patent application CN 101274365 A controls the P element content and uranium content in the raw material Si, and the uranium content of the prepared product is 0.4 ⁇ 5.0ppb, but this method has stricter requirements on the raw material Si, and the raw material is not easy to obtain.
  • the existing methods for preparing low-uranium spherical silicon micropowder have the following problems: Although high-purity low-uranium products can be obtained through chemical synthesis by selecting high-purity organic silicon sources and solvents, this method will bring environmental problems ; Select 1ppm low-uranium natural quartz alone, only micron-level products can be obtained, and at the same time, the requirements for raw materials are relatively high, and it is difficult to achieve products with uranium content below 0.5ppb; select raw material Si that has been strictly screened, and through simple acid treatment, The U content in the prepared product is unstable.
  • the object of the present invention is to provide a method for preparing high-purity low-uranium submicron spherical silica powder.
  • the preparation method of high-purity low-uranium submicron spherical silica powder comprises the following steps:
  • Step (1) under the protection of an inert gas, calcinate the raw material in a high-temperature furnace at 700-1400°C for 10-20 hours. After the calcination is completed, it is quenched with water and crushed into sand materials below 1mm. Settling and drying, and repeating calcining-crushing - Settling and drying step to obtain sand material, the raw material is elemental silicon or silicon-containing inorganic compound block material with a purity of more than 99.5%, a uranium content of 5-20 ppb, and a particle size of 30-100 mm;
  • step (2) the mass ratio of sand material to water is 1-3:2-5, and HF solution with water quality of 0.1 ⁇ -0.5 ⁇ is added, and the average particle size of powder is obtained by wet ball milling. 40 ⁇ m slurry;
  • Step (3) according to the concentration ratio of hydrofluoric acid solution and hydrochloric acid solution is 1 ⁇ 300:1, add equal mass of hydrofluoric acid solution and hydrochloric acid solution in the powder slurry, add at the same time account for the total amount of hydrofluoric acid solution and hydrochloric acid solution 0.1% to 0.5% hydrogen peroxide by mass (mass of mixed acid solution), add flotation agent and collector to recover uranium element, stir at 30-60°C to prepare powder slurry;
  • Step (4) press-filtering, washing, and drying the powder slurry obtained in step (3), to obtain a powder with a uranium content below 1.0 ppb;
  • step (5) the flame spheroidization method is adopted, and the carrier gas, combustible gas and combustion aid are introduced, ignited, and the powder obtained in step (4) is spheroidized at a high temperature of 1800-2400 ° C to collect submicron-sized spherical silica Micronized.
  • the silicon-containing inorganic compound is one or more of silicon nitride, silicon carbide and silicon oxide.
  • the wet ball milling time is 5-30 hours.
  • the mass concentration of the hydrofluoric acid solution is 1.5%.
  • the concentration ratio of the hydrofluoric acid solution and the hydrochloric acid solution is 1-3:1.
  • the mass concentration of the hydrochloric acid solution is 0.005%-1.5%.
  • the stirring time is 12-72 hours.
  • the carrier gas is oxygen, air, nitrogen or argon
  • the combustible gas is natural gas (LNG), liquefied petroleum gas (LPG) or H 2
  • the combustion aid is air or oxygen
  • the average particle diameter D50 of the submicron spherical silica powder is 0.1-1.5 ⁇ m, the U content is less than 1.0 ppb, and the SiO 2 purity is ⁇ 99.90%.
  • the present invention has the following advantages:
  • the submicron spherical silica micropowder with low U content and stability is prepared.
  • the method of the invention has low requirements on raw materials and is applicable to various industrial grade silicon sources.
  • the powder is spheroidized at a high temperature of 2000°C under oxygen-enriched conditions to obtain a high-purity low-uranium submicron spherical silica powder with a particle size of 0.3 ⁇ m, a U content of 0.2ppb, and a SiO 2 purity of 99.95%. .
  • the powder is spheroidized at 2000°C under high temperature and oxygen-enriched conditions, and the obtained high-purity low-uranium submicron spherical silica powder has a particle size of 0.3 ⁇ m, a U content of 0.3ppb, and a SiO 2 purity of 99.91 %.
  • the powder is spheroidized at 2000°C under high temperature and oxygen-enriched conditions to obtain high-purity low-uranium submicron spherical silica powder with a particle size of 0.3 ⁇ m, a U content of 0.9ppb, and a SiO 2 purity of 99.93%. .
  • Embodiment 2 This embodiment is basically the same as Embodiment 1, the only difference is that the calcination temperature is 700°C.
  • the prepared high-purity low-uranium submicron spherical silica powder has a particle size of 0.3 ⁇ m, a U content of 0.9 ppb, and a SiO2 purity of 99.90%.
  • Embodiment 2 This embodiment is basically the same as Embodiment 1, the only difference is that the calcination temperature is 1400°C.
  • the prepared high-purity low-uranium submicron spherical silica powder has a particle size of 0.3 ⁇ m, a U content of 0.2 ppb, and a SiO2 purity of 99.96%.
  • This embodiment is basically the same as Example 1, the only difference is that the mass concentration of the HF solution is 1.5%, the mass concentration of the HCl solution is 1.5%, and the particle size of the high-purity low-uranium submicron spherical silica micropowder is 0.3. ⁇ m, the U content is 0.3ppb, and the SiO2 purity is 99.95%.
  • This embodiment is basically the same as Example 1, the only difference is that the mass concentration of the HF solution is 1.5%, the mass concentration of the HCl solution is 0.005%, and the particle size of the high-purity low-uranium submicron spherical silica micropowder is 0.3%. ⁇ m, the U content is 0.8ppb, and the SiO2 purity is 99.88%.
  • This comparative example is basically the same as Example 1, the only difference is that in the acid treatment process, instead of mixed acid, only HF solution with a mass concentration of 1.5% is added.
  • the obtained submicron spherical silica powder has a particle size of 0.3 ⁇ m, a U content of 2.5ppb, and a SiO purity of 99.85%.
  • This comparative example is basically the same as Example 1, the only difference is that no mixed acid treatment is carried out.
  • the obtained submicron spherical silica powder has a particle size of 0.3 ⁇ m, a U content of 13 ppb, and a SiO purity of 99.80%.
  • This comparative example is basically the same as Example 1, the only difference is that the calcination temperature is 500°C.
  • the obtained submicron spherical silica powder has a particle size of 0.3 ⁇ m, a U content of 3.3 ppb, and a SiO purity of 99.90%.
  • This comparative example is basically the same as Example 1, the only difference is that the HCl solution is replaced by CH 3 COOH.
  • the obtained submicron spherical silica powder has a particle size of 0.3 ⁇ m, a U content of 2.6 ppb, and a SiO purity of 99.84%.
  • This comparative example is basically the same as Example 1, the only difference is that the HCl solution is replaced by HNO 3 .
  • the obtained submicron spherical silica powder has a particle size of 0.3 ⁇ m, a U content of 1.9 ppb, and a SiO purity of 99.87%.
  • This comparative example is basically the same as Example 1, the only difference is that the HCl solution with a mass concentration of 0.5% is replaced with an HCl solution with a mass concentration of 0.003%.
  • the obtained submicron spherical silica powder has a particle size of 0.3 ⁇ m, a U content of 2.4 ppb, and a SiO purity of 99.91%.
  • This comparative example is basically the same as that of Example 1, the only difference is that the HF solution with a mass concentration of 1.5% is replaced with the HF solution with a mass concentration of 0.05%.
  • the obtained submicron spherical silica powder has a particle size of 0.3 ⁇ m, a U content of 2.7 ppb, and a SiO purity of 99.83%.

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  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
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Abstract

本发明公开了一种高纯低铀亚微米级球形二氧化硅微粉的制备方法。所述方法先将块状原料煅烧、破碎、沉降烘干成1mm以下的砂料，再将砂料湿法球磨成粉浆，然后在粉浆中加入由氢氟酸溶液和盐酸溶液组成的混酸溶液，并加入双氧水，回收铀元素，之后将粉浆压滤、洗涤、干燥，制得铀含量在1.0ppb以下的粉末，最后采用火焰成球法，制得亚微米级球形二氧化硅微粉。本发明方法对原料要求低，适用于各种工业级硅源，制得的亚微米级球形二氧化硅微粉中U含量低且稳定。

Description

高纯低铀亚微米级球形二氧化硅微粉的制备方法
本申请要求于2021年12月02日提交中国专利局、申请号为CN202111460463.2、发明名称为“高纯低铀亚微米级球形二氧化硅微粉的制备方法”的中国专利申请的优先权，其全部内容通过引用结合在本申请中。
技术领域
本发明属于导热填料的制备技术领域，涉及一种高纯低铀亚微米级球形二氧化硅微粉的制备方法。
背景技术
随着电子设备朝着小和薄方向的不断发展，半导体封装用填料粒径越来越小。同时为了提高填料在半导体封装中的填充量和流动性，需要添加球形度高的亚微米级(一般认为0.1μm～1μm)填料。然而随着超大集成电路集成度的不断提高，导线间距越来越小，导致封装材料中α射线较强时对信号的传输会产生软误差，从而降低集成电路的可靠性。因此，用于超大集成电路和存储芯片的封装材料对α射线提出了更高要求。自然矿中的铀元素(U)是影响α射线的最主要因素。因此需要控制铀元素含量，进而控制α射线的强弱。
中国专利申请CN101570332A采用有机硅源制成硅溶胶，经造粒等工序，得到U＜1ppm的球形硅微粉。中国专利申请CN104556076A采用有机硅烷提纯、乳化等工序，得到无α射线的球形硅微粉。然而上述方法主要是通过化学合成的方法，采用高纯的有机硅源和溶剂，制得高纯低铀的球形硅微粉，存在能耗高、污染大、成本居高不下的问题。
中国专利申请CN 112591756A采用1ppb左右低铀含量的天然石英，经过火焰燃烧制得铀含量在1ppb以下的产品。但是该方法仅适合生产微米级球形硅微粉，不能一步得到亚微米级产品，需要通过不断的分级等复杂工序处理才能获得。
中国专利申请CN 101274365 A通过控制原料Si中P元素含量和铀含量，制备的产品铀含量在0.4～5.0ppb，但是该方法对原料Si的要求较严 格，原料不容易获得。
综上所述，现有的低铀球形硅微粉的制备方法存在以下问题：虽然通过选择高纯有机硅源和溶剂经化学合成能够得到高纯低铀产品，然而这种方法会带来环保问题；单独选择1ppm左右低铀天然石英，只能得到微米级产品，同时对原料的要求较高，难以做到铀含量为0.5ppb以下的产品；选择经严格筛选的原料Si，经过简单酸处理，制得的产品中U含量不稳定。
发明内容
本发明的目的在于提供一种高纯低铀亚微米级球形二氧化硅微粉的制备方法。
实现本发明目的的技术方案如下：
高纯低铀亚微米级球形二氧化硅微粉的制备方法，包括以下步骤：
步骤(1)，惰性气体保护下，将原料在700～1400℃高温炉内煅烧10～20h，煅烧结束后，遇水急冷，破碎为1mm以下的砂料，沉降烘干，再重复煅烧-破碎-沉降烘干步骤，制得砂料，所述的原料为纯度为99.5％以上、铀含量为5～20ppb、粒径为30～100mm单质硅或含硅无机化合物块料；
步骤(2)，按砂料与水的质量比为1～3：2～5，并加入水质量的0.1‰～0.5‰的HF溶液，经湿法球磨制得粉体平均粒径为5～40μm的粉浆；
步骤(3)，按氢氟酸溶液和盐酸溶液的浓度比为1～300:1，在粉浆中加入等质量的氢氟酸溶液和盐酸溶液，同时加入占氢氟酸溶液和盐酸溶液总质量(混合酸溶液质量)的0.1％～0.5％的双氧水，并加入浮选剂和捕收剂回收铀元素，在30～60℃下搅拌，制得粉浆；
步骤(4)，将步骤(3)获得的粉浆压滤、洗涤、干燥，制得铀含量在1.0ppb以下的粉末；
步骤(5)，采用火焰成球法，通入载气、可燃气体以及助燃剂，点燃，将步骤(4)获得的粉末在1800～2400℃下高温球化，收集亚微米级球形二氧化硅微粉。
优选地，步骤(1)中，所述的含硅无机化合物为氮化硅、碳化硅和氧 化硅中的一种或两种以上。
优选地，步骤(2)中，湿法球磨时间为5～30h。
优选地，步骤(2)中，氢氟酸溶液的质量浓度为1.5％。
优选地，步骤(3)中，氢氟酸溶液和盐酸溶液的浓度比为1～3:1。
优选地，步骤(3)中，盐酸溶液的质量浓度为0.005％～1.5％。
优选地，步骤(3)中，搅拌时间为12～72h。
优选地，步骤(5)中，载气为氧气、空气、氮气或氩气，可燃气体为天然气(LNG)、液化石油气(LPG)或H 2，助燃剂为空气或氧气。
优选地，步骤(5)中，亚微米级球形二氧化硅微粉的平均粒径D50为0.1～1.5μm，U含量＜1.0ppb，SiO 2纯度≥99.90％。
与现有技术相比，本发明具有以下优点：
本发明通过水淬、湿法提纯和经氧化后的U元素经特定的混合酸处理，制得U含量低且稳定的亚微米级球形二氧化硅微粉。本发明方法对原料要求低，适用于各种工业级硅源。
具体实施方式
下面结合具体实施例对本发明作进一步详述。
实施例1
(1)氩气保护下，将10kg粒径为80mm的单质硅(纯度为99.6％，铀含量为15ppb)在1250℃高温炉内煅烧15h。煅烧结束后，遇水急冷，破碎为1mm以下的砂料，沉降烘干。再循环煅烧-破碎-沉降烘干步骤一次。多次收集烘干后的砂料，备用。
(2)称取250kg烘干后的砂料加入到230kg水中，并加入0.05kg质量浓度为1.5％的氢氟酸溶液，经湿法球磨，制得粉体平均粒径为35μm的粉浆。
(3)将粉浆转移至反应釜中，加入15kg质量浓度为1.5％的HF溶液和15kg质量浓度为0.5％的HCl溶液，同时加入占混合酸溶液质量的0.1％的双氧水，并加入浮选剂和捕收剂回收铀元素，60℃搅拌24h，制得粉浆。
(4)将粉浆压滤、洗涤、干燥，制得铀含量在1.0ppb以下的粉末。
(5)将粉末在2000℃高温、富氧条件下高温球化，制得高纯低铀亚微 米球形二氧化硅微粉的粒径为0.3μm，U含量为0.2ppb，SiO 2纯度为99.95％。
实施例2
(1)氩气保护下，将10kg粒径为35mm的氮化硅(纯度为99.8％)和单质硅(纯度为99.6％)在900℃高温炉内煅烧5h。煅烧结束后，遇水急冷，破碎为1mm以下的砂料，沉降烘干。再循环煅烧-破碎-沉降烘干步骤一次。多次收集烘干后的砂料，备用。
(2)将250kg烘干后的砂料加入到230kg水中，并加入0.05kg质量浓度为1.5％的氢氟酸溶液，经湿法球磨，制得粉体平均粒径为30μm的粉浆。
(3)将粉浆转移至反应釜中，加入15kg质量浓度为1.5％的HF溶液和15kg质量浓度为0.5％的HCl溶液，同时加入占混合酸溶液质量的0.3％的双氧水，并加入浮选剂和捕收剂回收铀元素，60℃搅拌24h，制得粉浆。
(4)将粉浆压滤、洗涤、干燥，制得铀含量在1.0ppb以下的粉末。
(5)将粉末在2000℃高温、富氧条件下高温球化，制得的高纯低铀亚微米球形二氧化硅微粉的粒径为0.3μm，U含量为0.3ppb，SiO 2纯度为99.91％。
实施例3
(1)氩气保护下，将10kg粒径为70mm的氮化硅(纯度为99.6％)在850℃高温炉内煅烧15h。煅烧结束后，遇水急冷，破碎为1mm以下的砂料，沉降烘干。再循环煅烧-破碎-沉降烘干步骤一次。多次收集烘干后的砂料，备用。
(2)将250kg烘干后的砂料加入到230kg水中，并加入0.05kg质量浓度为1.5％的氢氟酸溶液，经湿法球磨，制得粉体平均粒径为35μm的粉浆。
(3)将粉浆转移至反应釜中，加入15kg质量浓度为1.5％HF的溶液和15kg质量浓度为1.5％HCl的溶液，同时加入占混合酸溶液质量的0.1％的双氧水，并加入浮选剂和捕收剂回收铀元素，35℃搅拌12h，制得粉浆。
(4)将粉浆压滤、洗涤、干燥，制得铀含量在1.0ppb以下的粉末。
(5)将粉末在2000℃高温、富氧条件下高温球化，制得高纯低铀亚微 米球形二氧化硅微粉，粒径为0.3μm，U含量为0.9ppb，SiO 2纯度为99.93％。
实施例4
本实施例与实施例1基本相同，唯一不同的是煅烧温度为700℃。制得的高纯低铀亚微米球形二氧化硅微粉的粒径为0.3μm，U含量为0.9ppb，SiO 2纯度为99.90％。
实施例5
本实施例与实施例1基本相同，唯一不同的是煅烧温度为1400℃。制得的高纯低铀亚微米球形二氧化硅微粉的粒径为0.3μm，U含量为0.2ppb，SiO 2纯度为99.96％。
实施例6
本实施例与实施例1基本相同，唯一不同的是HF溶液的质量浓度为1.5％，HCl溶液的质量浓度为1.5％，制得高纯低铀亚微米球形二氧化硅微粉的粒径为0.3μm，U含量为0.3ppb，SiO 2纯度为99.95％。
实施例7
本实施例与实施例1基本相同，唯一不同的是HF溶液的质量浓度为1.5％，HCl溶液的质量浓度为0.005％，制得高纯低铀亚微米球形二氧化硅微粉的粒径为0.3μm，U含量为0.8ppb，SiO 2纯度为99.88％。
对比例1
本对比例与实施例1基本相同，唯一不同的是酸处理过程中，加入的不是混合酸，而仅仅是质量浓度为1.5％的HF溶液。制得的亚微米球形二氧化硅微粉的粒径为0.3μm，U含量为2.5ppb，SiO 2纯度为99.85％。
对比例2
本对比例与实施例1基本相同，唯一不同的是不进行混合酸处理。制得的亚微米球形二氧化硅微粉的粒径为0.3μm，U含量为13ppb，SiO 2纯度为99.80％。
对比例3
本对比例与实施例1基本相同，唯一不同的是煅烧温度为500℃。制得的亚微米球形二氧化硅微粉的粒径为0.3μm，U含量为3.3ppb，SiO 2纯度为99.90％。
对比例4
本对比例与实施例1基本相同，唯一不同的是将HCl溶液换成CH 3COOH。制得的亚微米球形二氧化硅微粉的粒径为0.3μm，U含量为2.6ppb，SiO 2纯度为99.84％。
对比例5
本对比例与实施例1基本相同，唯一不同的是将HCl溶液换成HNO 3。制得的亚微米球形二氧化硅微粉的粒径为0.3μm，U含量为1.9ppb，SiO 2纯度为99.87％。
对比例6
本对比例与实施例1基本相同，唯一不同的是将质量浓度为0.5％的HCl溶液换成质量浓度为0.003％的HCl溶液。制得的亚微米球形二氧化硅微粉的粒径为0.3μm，U含量为2.4ppb，SiO 2纯度为99.91％。
对比例7
本对比例与实施例1基本相同，唯一不同的是将质量浓度为1.5％的HF溶液换成质量浓度为0.05％的HF溶液。制得的亚微米球形二氧化硅微粉的粒径为0.3μm，U含量为2.7ppb，SiO 2纯度为99.83％。
以上实施例的说明只是用于帮助理解本发明的方法及其核心思想。应当指出，对于本技术领域的普通技术人员来说，在不脱离本发明原理的前提下，还可以对本发明进行若干改进和修饰，这些改进和修饰也落入本发明权利要求的保护范围内。对这些实施例的多种修改对本领域的专业技术人员来说是显而易见的，本文中所定义的一般原理可以在不脱离本发明的精神或范围的情况下在其它实施例中实现。因此，本发明将不会被限制于本文所示的这些实施例，而是要符合与本文所公开的原理和新颖特点相一致的最宽的范围。

Claims (11)

  1. 高纯低铀亚微米级球形二氧化硅微粉的制备方法，其特征在于，包括以下步骤：
    步骤(1)，惰性气体保护下，将原料在700～1400℃高温炉内煅烧10～20h，煅烧结束后，遇水急冷，破碎为1mm以下的砂料，沉降烘干，再重复煅烧-破碎-沉降烘干步骤，制得砂料，所述的原料为纯度为99.5％以上、铀含量为5～20ppb、粒径为30～100mm的单质硅或含硅无机化合物块料；
    步骤(2)，按砂料与水的质量比为1～3：2～5，并加入水质量的0.1‰～0.5‰的HF溶液，经湿法球磨制得粉体平均粒径为5～40μm的粉浆；
    步骤(3)，按氢氟酸溶液和盐酸溶液的浓度比为1～300:1，在所述粉浆中加入等质量的氢氟酸溶液和盐酸溶液，同时加入占氢氟酸溶液和盐酸溶液总质量的0.1％～0.5％的双氧水，并加入浮选剂和捕收剂回收铀元素，在30～60℃下搅拌，制得粉浆；
    步骤(4)，将步骤(3)获得的粉浆压滤、洗涤、干燥，制得铀含量在1.0ppb以下的粉末；
    步骤(5)，采用火焰成球法，通入载气、可燃气体以及助燃剂，点燃，将步骤(4)获得的粉末在1800～2400℃下高温球化，收集亚微米级球形二氧化硅微粉。
  2. 根据权利要求1所述的制备方法，其特征在于，步骤(1)中，所述的含硅无机化合物为氮化硅、碳化硅和氧化硅中的一种或两种以上。
  3. 根据权利要求1所述的制备方法，其特征在于，步骤(2)中，湿法球磨时间为5～30h。
  4. 根据权利要求1所述的制备方法，其特征在于，步骤(2)中，氢氟酸溶液的质量浓度为1.5％。
  5. 根据权利要求1所述的制备方法，其特征在于，步骤(3)中，氢氟酸溶液和盐酸溶液的浓度比为1～3:1。
  6. 根据权利要求1或5所述的制备方法，其特征在于，步骤(3)中，盐酸溶液的质量浓度为0.005％～1.5％。
  7. 根据权利要求1所述的制备方法，其特征在于，步骤(3)中，搅拌时间为12～72h。
  8. 根据权利要求1所述的制备方法，其特征在于，步骤(5)中，载气为氧气、空气、氮气或氩气。
  9. 根据权利要求1所述的制备方法，其特征在于，步骤(5)中，可燃气体为天然气、液化石油气或H 2。
  10. 根据权利要求1所述的制备方法，其特征在于，步骤(5)中，助燃剂为空气或氧气。
  11. 根据权利要求1所述的制备方法，其特征在于，步骤(5)中，亚微米级球形二氧化硅微粉的平均粒径D50为0.1～1.5μm，U含量＜1.0ppb，SiO 2纯度≥99.90％。
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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01160234A (ja) * 1987-12-17 1989-06-23 Matsushita Electric Ind Co Ltd 情報伝送システム
JP2006256913A (ja) * 2005-03-17 2006-09-28 Admatechs Co Ltd 球状シリカ粒子、樹脂組成物及び半導体液状封止材
CN112573529A (zh) * 2020-12-15 2021-03-30 江苏中腾石英材料科技股份有限公司 5g基站用高纯低辐射球形硅微粉的制备工艺及设备
CN112591756A (zh) * 2020-11-30 2021-04-02 江苏联瑞新材料股份有限公司 一种高纯低放射性球形硅微粉及其制备方法
CN114031086A (zh) * 2021-12-02 2022-02-11 江苏联瑞新材料股份有限公司 高纯低铀亚微米级球形二氧化硅微粉的制备方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1178791A (fr) * 1957-07-12 1959-05-14 Comptoir Des Phosphates De L A Procédé de récupération de l'uranium
JP2012188332A (ja) 2011-03-14 2012-10-04 Admatechs Co Ltd 高純度シリカ原料の製造方法
CN102897993A (zh) * 2012-10-25 2013-01-30 中国地质大学（北京） 一种采用天然脉石英矿制备高纯石英砂的方法
CN103950931B (zh) * 2014-05-16 2016-02-03 宝丰恒瑞新材料有限公司 一种碳化硅微粉的处理工艺
CN106676291A (zh) * 2016-12-28 2017-05-17 核工业北京化工冶金研究院 一种从矿石中综合回收铀铌钽的方法
CN110182814B (zh) * 2019-04-20 2021-09-17 黄冈师范学院 一种SiO2纯度大于5N的高纯石英砂的生产方法
CN112978740B (zh) * 2021-03-23 2023-11-21 江苏联瑞新材料股份有限公司 亚微米球形二氧化硅微粉的制备方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01160234A (ja) * 1987-12-17 1989-06-23 Matsushita Electric Ind Co Ltd 情報伝送システム
JP2006256913A (ja) * 2005-03-17 2006-09-28 Admatechs Co Ltd 球状シリカ粒子、樹脂組成物及び半導体液状封止材
CN112591756A (zh) * 2020-11-30 2021-04-02 江苏联瑞新材料股份有限公司 一种高纯低放射性球形硅微粉及其制备方法
CN112573529A (zh) * 2020-12-15 2021-03-30 江苏中腾石英材料科技股份有限公司 5g基站用高纯低辐射球形硅微粉的制备工艺及设备
CN114031086A (zh) * 2021-12-02 2022-02-11 江苏联瑞新材料股份有限公司 高纯低铀亚微米级球形二氧化硅微粉的制备方法

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