WO2023074811A1 - 半導体パッケージおよび半導体装置 - Google Patents

半導体パッケージおよび半導体装置 Download PDF

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Publication number
WO2023074811A1
WO2023074811A1 PCT/JP2022/040205 JP2022040205W WO2023074811A1 WO 2023074811 A1 WO2023074811 A1 WO 2023074811A1 JP 2022040205 W JP2022040205 W JP 2022040205W WO 2023074811 A1 WO2023074811 A1 WO 2023074811A1
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WO
WIPO (PCT)
Prior art keywords
semiconductor package
view
opening
package according
sectional
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2022/040205
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English (en)
French (fr)
Japanese (ja)
Inventor
宏信 藤原
猛夫 佐竹
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kyocera Corp
Original Assignee
Kyocera Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kyocera Corp filed Critical Kyocera Corp
Priority to US18/704,766 priority Critical patent/US20240421556A1/en
Priority to JP2023556644A priority patent/JP7685609B2/ja
Priority to CN202280072278.2A priority patent/CN118160174A/zh
Publication of WO2023074811A1 publication Critical patent/WO2023074811A1/ja
Anticipated expiration legal-status Critical
Priority to JP2025066243A priority patent/JP2025108575A/ja
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H01S5/02315—Support members, e.g. bases or carriers
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/02218—Material of the housings; Filling of the housings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/407—Optical elements or arrangements indirectly associated with the devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/50—Encapsulations or containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W76/00—Containers; Fillings or auxiliary members therefor; Seals
    • H10W76/10—Containers or parts thereof

Definitions

  • the present disclosure relates to a semiconductor package in which a semiconductor element can be mounted, and a semiconductor device having the semiconductor element mounted thereon.
  • Patent Document 1 A conventional semiconductor package and semiconductor device are described in Patent Document 1, for example.
  • a semiconductor package includes a base, a fixing member, and a joining member that joins the base and the fixing member.
  • the base has a base portion having a first upper surface, and a frame portion located on the first upper surface and having an inner surface, an outer surface, and an opening penetrating from the outer surface to the inner surface in the first direction.
  • the fixing member has a first part located in the opening, a second part continuous with the first part and located on the outer side surface of the first part, and penetrating through the first part and the second part in the first direction. and a through hole.
  • the joining member is positioned between the first portion and the opening.
  • the opening In a cross-sectional view that intersects with the first direction, the opening has a shape that includes a first linear portion in at least a portion thereof, and the first portion includes a second linear portion that faces the first linear portion.
  • the joint member has a shape, and the thickness of the joining member in a cross-sectional view that intersects the first direction is the thinnest between the first straight portion and the second straight portion.
  • a semiconductor device includes the semiconductor package configured as described above and a semiconductor element mounted on the first upper surface.
  • FIG. 1 is an external perspective view of a semiconductor package and a semiconductor device according to an embodiment of the present disclosure
  • FIG. 2 is an exploded perspective view of the semiconductor package and the semiconductor device shown in FIG. 1
  • FIG. 2 is a perspective view of the semiconductor package shown in FIG. 1
  • FIG. 2 is a plan view of the semiconductor package shown in FIG. 1
  • FIG. 2 is a perspective view of a base in the semiconductor package shown in FIG. 1
  • FIG. 4 is an X1-X1 cross-sectional view of the semiconductor package shown in FIG. 3
  • FIG. 4 is a Y1-Y1 cross-sectional view of the semiconductor package shown in FIG. 3
  • FIG. 2 is a perspective view of a fixing member in the semiconductor package shown in FIG. 1;
  • FIG. 8B is a rear perspective view of the fixing member shown in FIG. 8A;
  • FIG. 8B is a Y2-Y2 cross-sectional view of FIG. 8A;
  • FIG. 4 is a cross-sectional view of a securing member according to another embodiment of the present disclosure;
  • 8C is a perspective view of the securing member shown in FIG. 8D;
  • FIG. 8C is a rear perspective view of the fixing member shown in FIG. 8D;
  • FIG. FIG. 4 is a cross-sectional view of a securing member according to another embodiment of the present disclosure;
  • 8G is a perspective view of the securing member shown in FIG. 8G;
  • FIG. 8G is a perspective view of the securing member shown in FIG. 8G;
  • FIG. 8G is a rear perspective view of the fixing member shown in FIG. 8G.
  • FIG. FIG. 10 is a cross-sectional view of a securing member according to yet another embodiment of the present disclosure
  • 8J is a perspective view of the securing member shown in FIG. 8J
  • FIG. Figure 8J is a rear perspective view of the securing member shown in Figure 8J
  • 2 is a partially enlarged cross-sectional view of a joint portion between a fixing member and a frame portion of the semiconductor package shown in FIG. 1, viewed from above
  • FIG. FIG. 8 is an enlarged view of a main portion A shown in FIG. 7;
  • FIG. 10 is an external perspective view of a semiconductor package and a semiconductor device according to another embodiment of the present disclosure
  • 12 is an exploded perspective view of the semiconductor package and the semiconductor device shown in FIG. 11
  • FIG. 12 is a perspective view of the semiconductor package shown in FIG. 11
  • FIG. 12 is a plan view of the semiconductor package shown in FIG. 11
  • FIG. FIG. 12 is a perspective view of a base in the semiconductor package shown in FIG. 11
  • 12 is a perspective view of a fixing member in the semiconductor package shown in FIG. 11
  • FIG. 16B is a rear perspective view of the fixing member shown in FIG. 16A
  • FIG. FIG. 16B is a cross-sectional view taken along line Y3-Y3 of FIG.
  • FIG. 16A 14 is an X2-X2 cross-sectional view of the semiconductor package shown in FIG. 13;
  • FIG. 18 is an enlarged view of a main portion B shown in FIG. 17;
  • FIG. 18 is an enlarged view of main part B shown in FIG. 17 of a semiconductor package according to still another embodiment of the present disclosure;
  • FIG. 18 is an enlarged view of main part B shown in FIG. 17 of a semiconductor package according to still another embodiment of the present disclosure; FIG.
  • the semiconductor package disclosed in Patent Document 1 has a base body having a mounting region in which an optical semiconductor element is mounted, and a fixing member.
  • a side surface of the substrate has a through hole.
  • the fixing member is inserted into the through hole and fixed with a bonding material.
  • An optical component such as an optical fiber member is welded to the fixing member using a laser or the like.
  • the semiconductor package and the semiconductor device may be directed upward or downward, but for the sake of convenience, an orthogonal coordinate system xyz is defined, and the positive side of the z direction is upward.
  • the first direction refers to, for example, the y direction in the drawings.
  • the second direction refers to a direction perpendicular to the first direction in plan view, for example, the x direction in the drawing.
  • the third direction refers to a direction orthogonal to the first direction and the second direction in plan view, and refers to, for example, the z direction in the drawings.
  • FIG. 1 A semiconductor package 1 according to a first embodiment of the present disclosure and a semiconductor device 10 including the same will be described with reference to FIGS. 1 to 10.
  • FIG. 1 A semiconductor package 1 according to a first embodiment of the present disclosure and a semiconductor device 10 including the same will be described with reference to FIGS. 1 to 10.
  • FIG. 1 A semiconductor package 1 according to a first embodiment of the present disclosure and a semiconductor device 10 including the same will be described with reference to FIGS. 1 to 10.
  • the semiconductor device 10 includes a semiconductor element 6, a semiconductor package 1, and a lid 7. Moreover, the semiconductor device 10 may further include a seal ring 8 .
  • the semiconductor element 6 performs optical signal processing such as converting an optical signal into an electrical signal or converting an electrical signal into an optical signal. As shown in FIG. 2, the semiconductor element 6 is housed in the semiconductor package 1. As shown in FIG.
  • Examples of the semiconductor element 6 include an optical semiconductor element such as a semiconductor laser (Laser Diode; LD) or a photodiode (Photodiode; PD), a semiconductor integrated circuit element, and a sensor element such as an optical sensor.
  • Semiconductor element 6 may be formed of a semiconductor material such as gallium arsenide or gallium nitride.
  • the semiconductor package 1 can protect the semiconductor element 6 from the outside. Moreover, the semiconductor package 1 includes at least a base 2 that houses the semiconductor element 6 , a fixing member 3 that is joined to the base 2 , a joining member 4 that joins the base 2 and the fixing member 3 , and an input/output terminal 5 . I have.
  • the base 2 has a base 21 and a frame 22, as shown in FIG.
  • the base 21 of the base 2 has a first upper surface 21a.
  • the frame portion 22 of the base 2 has an opening 22a, an outer side surface 22b, an inner side surface 22c, and a second upper surface 22d, and is located on the first upper surface 21a.
  • a semiconductor element 6 is mounted on the base 21 of the base 2 .
  • the base 21 has, for example, a square shape in plan view, and has a first upper surface 21a on which the semiconductor element 6 is mounted.
  • the base 21 can dissipate heat generated from the semiconductor element 6 inside the semiconductor package 1 to the outside of the semiconductor package 1 .
  • the shape of the base portion 21 in plan view is a quadrilateral shape. may be
  • the length of one side of the base 21 may be, for example, 5 mm or more and 50 mm or less.
  • Materials for the base 21 include, for example, metal materials such as copper, iron, tungsten, molybdenum, nickel or cobalt, or alloys containing these metal materials.
  • the base portion 21 may be a single metal plate or a laminate in which a plurality of metal plates are laminated.
  • the material of the base 21 is the metal material described above, the surface of the base 21 is plated with nickel, gold, or the like using an electroplating method or an electroless plating method in order to reduce oxidation corrosion. Layers may be formed.
  • the ingot of the above-mentioned metal material is processed into a predetermined shape by performing metal processing such as rolling, punching, and cutting. can be done.
  • the main component of the base 21 is, for example, an aluminum oxide sintered body, a mullite sintered body, a silicon carbide sintered body, an aluminum nitride sintered body, a silicon nitride sintered body, or a ceramic material such as glass ceramics.
  • the main component of the base portion 21 is a ceramic material
  • the first upper surface 21a of the base portion 21 is provided with wiring or wiring formed by sintering a metal paste containing a metal such as molybdenum or manganese through which high-frequency signals are transmitted. , wiring formed using a thin film forming technique such as vapor deposition or sputtering may be located.
  • the “main component” in the present disclosure means at least a component with the highest content, for example, a component with a content of 90% or more.
  • the first upper surface 21a of the base 21 may have a stepped portion (for example, a submount) for mounting the semiconductor element 6, and the semiconductor element 6 may be mounted via the stepped portion.
  • a stepped portion for example, a submount
  • the step portion may be integrally molded.
  • the base portion 21 can have a convex portion 21b on the first upper surface 21a as shown in FIG. 7, and the semiconductor element 6 is mounted on the convex portion 21b. be done.
  • the frame portion 22 of the base 2 is located on the first upper surface 21a of the base portion 21 and protects the semiconductor element 6 located inside in plan view. That is, in plan view, the frame portion 22 is positioned so as to surround the semiconductor element 6 . Further, the frame portion 22 may be positioned along the outer edge of the first upper surface 21a, or may be positioned inside the outer edge of the first upper surface 21a. Also, the outer edge of the first upper surface 21a of the base 21 may not be entirely enclosed. In other words, there may be a portion that is partially open.
  • the material of the frame portion 22 may be, for example, metal materials such as copper, iron, tungsten, molybdenum, nickel or cobalt, or alloys containing these metal materials.
  • the material of the frame portion 22 is an insulating material such as an aluminum oxide sintered body, a mullite sintered body, a silicon carbide sintered body, an aluminum nitride sintered body, and a silicon nitride sintered body.
  • it may be a ceramic material such as glass ceramics.
  • the frame portion 22 can be joined to the base portion 21 via brazing material or the like.
  • the material of the brazing material is, for example, silver, copper, gold, aluminum or magnesium, and may contain additives such as nickel, cadmium or phosphorus.
  • the base portion 21 and the frame portion 22 can be formed integrally. In this case, the step of joining the base portion 21 and the frame portion 22 using a joining material can be omitted.
  • the opening 22a of the frame 22 extends from the outer surface 22b to the inner surface 22c and penetrates in the first direction. Further, as shown in FIG. 6, the opening 22a has a shape including at least a part of the first linear portion 22aa in a cross-sectional view that intersects with the first direction.
  • intersect means non-parallel.
  • the first direction refers to, for example, the y direction in the drawings.
  • the opening 22a may have a polygonal shape in a cross-sectional view that intersects with the first direction. Furthermore, as shown in FIG. 6, when the opening 22a is rectangular in a cross-sectional view that intersects the first direction, one of the four sides can be the first linear portion 22aa.
  • the fixing member 3 has a first portion 31 located at the opening 22a of the frame portion 22, and a portion adjacent to the outer surface 22b of the frame portion 22 continuously from the first portion 31. It has a second portion 32 and a through hole 33 penetrating through the first portion 31 and the second portion 32 in the first direction.
  • An optical component such as a lens or an optical fiber is fixed to the fixing member 3, for example.
  • the fixing member 3 examples include metal materials such as copper, iron, tungsten, molybdenum, nickel, and cobalt, or alloys containing these metal materials.
  • the fixing member 3 can be manufactured into a predetermined shape by using a metal processing method such as rolling or punching on an ingot obtained by casting a molten metal material into a mold and solidifying it.
  • the predetermined shape is, for example, as shown in FIGS. 16A to 16C, when viewed from the side in the first direction, the second portion 32 has a shape combining a circle and a rectangle, and the first portion 31 has a shape of a rectangle. Shape.
  • the first part 31 of the fixing member 3 is joined to the opening 22a of the frame part 22 via the joining member 4 .
  • the first portion 31 has a shape including a second straight portion 31a positioned to face the first straight portion 22aa of the opening 22a in a cross-sectional view that intersects the first direction.
  • the joining member 4 (D41) positioned between the first straight portion 22aa and the second straight portion 31a can be made the thinnest.
  • a portion of the joining member 4 positioned between the first straight portion 22aa and the second straight portion 31a may be the thinnest, or may be the thinnest portion positioned between the first straight portion 22aa and the second straight portion 31a.
  • All of the connecting members 4 may be the thinnest. This makes it possible to use the first linear portion 22aa and the second linear portion 31a as reference surfaces for optical axis alignment.
  • the first portion 31 of the fixing member 3 may have a shape along the opening 22a in a cross-sectional view that intersects the first direction.
  • the bonding area between the first portion 31 of the fixing member 3 and the opening 22a increases compared to the case where the first portion 31 of the fixing member 3 does not follow the shape of the opening 22a.
  • the bonding strength between the fixing member 3 and the base 2 can be improved.
  • the shape of the first portion 31 along the opening 22a is not limited to a shape in which the first portion 31 and the opening 22 are completely similar. For example, one of them may include a manufacturing error, or the opening 22a may be rectangular and the first portion 31 may be rectangular with at least one corner missing.
  • the interval between the side facing the opening 22a and the first portion 31 may be not constant.
  • the size of the first portion 31 in a side view from the first direction may be, for example, 2 mm ⁇ 2 mm to 10 mm ⁇ 10 mm.
  • the fixing member 3 can make the length L312 of the first portion 31 in the second direction shorter than the length L322 of the second portion 32 in the second direction in plan view.
  • the area of contact between the second portion 32 and the frame portion 22 or through the joint member 4 increases, so that the joint strength between the fixing member 3 and the frame portion 22 can be improved.
  • the length L312 of the first portion 31 in the second direction may be, for example, 2 mm or more and 10 mm or less.
  • the length L322 of the second portion 32 in the second direction may be, for example, 2 mm or more and 15 mm or less.
  • the fixing member 3 can make the length L313 of the first portion 31 in the third direction shorter than the length L323 of the second portion 32 in the third direction. .
  • the area of contact between the second portion 32 and the frame portion 22 or through the joint member 4 increases, so that the joint strength between the fixing member 3 and the frame portion 22 can be improved.
  • the length L313 of the first portion 31 in the third direction may be, for example, 2 mm or more and 10 mm or less.
  • the length L323 of the second portion 32 in the third direction may be, for example, 2 mm or more and 15 mm or less.
  • the fixing member 3 may have a portion where the first portion 31 and the second portion 32 are flush with each other in a cross-sectional view intersecting the first direction and/or a cross-sectional view intersecting the second direction.
  • the first portion 31 and the second portion 32 may have a portion where they are flush with each other.
  • the first part 31 and the second part 32 may have a portion where they are flush with each other both in view and in a cross-sectional view that intersects with the second direction.
  • the first part 31 of the fixing member 3 may have recesses 31c in the second direction and/or the third direction, for example, as shown in FIGS. 8J to 8L.
  • the joint member 4 positioned between the opening 22a and the first portion 31 can be accumulated in the recess 31c. Therefore, it is possible to further improve the bonding strength between the fixing member 3 and the base 2 .
  • the thickness D311 of the first portion 31 in the first direction may be greater than the thickness D221 of the frame portion 22 in the first direction.
  • the bonding area between the opening 22a and the first portion 31 is increased. Therefore, the bonding strength between the fixing member 3 and the frame portion 22 can be improved.
  • the thickness D311 of the first portion 31 and the thickness D221 of the frame portion 22 are constant along the second direction, but these thicknesses may partially decrease.
  • the frame portion 22 may be partly thicker around the opening 22a to which the first portion 31 is fixed.
  • the minimum thickness of the first portion 31 in the first direction is the frame portion 22 may be thicker than the maximum thickness in the first direction by, for example, 10 ⁇ m or more and 100 ⁇ m or less.
  • the shape of the second portion 32 of the fixing member 3 when viewed sideways from the first direction is not particularly limited. For example, it may be circular as shown in FIGS. 8A-8B.
  • the through hole 33 of the fixing member 3 may be circular as shown in FIGS. 8A to 8C.
  • the through hole 33 may have a concave or convex holding portion 33a, as shown in FIGS. 8D to 8L.
  • the lens is held in the through hole 33, and the concave or convex holding portion 33a joins the fixing member 3 and the lens.
  • the lens is made of, for example, glass, translucent resin, or a translucent material such as sapphire.
  • an optical fiber for example, may be inserted and fixed in the through hole 33 of the fixing member 3 .
  • the size of the through-hole 33 is set to have a diameter of, for example, 1.5 mm or more and 5 mm or less.
  • the joining member 4 is positioned between the opening 22a of the frame 22 and the first part 31 of the fixing member 3, and joins the opening 22a and the first part 31 together.
  • the thickness of the joining member 4 is the thinnest between the first linear portion 22aa and the second linear portion 31a. That is, the thickness D41 of the joining member 4 located between the first straight portion 22aa of the opening 22a and the second straight portion 31a of the first portion 31 is the same as the first straight portion 22aa of the opening 22a and the first straight portion 31a. 31 is thinner than the thickness of the joint member 4 positioned at a position different from the position between the second linear portion 31a. Furthermore, in other words, the joining member 4 has a thinnest portion at a position between the first portion 31 and the second linear portion 31a.
  • the thickness of the joint member 4 here refers to the thickness in a cross-sectional view that intersects the first direction.
  • the thickness D41 of the joining member 4 located between the first straight portion 22aa and the second straight portion 31a is constant along the first straight portion 22aa.
  • the surface having the first linear portion 22aa and the surface having the second linear portion 31a can be used as reference surfaces. This makes it possible to facilitate alignment between the fixing member 3 and the opening 22a of the base 2, thereby reducing the occurrence of optical axis misalignment.
  • the thickness D41 of the joining member 4 may not be constant along the first straight portion 22aa. A part of the member 4 should be the thinnest.
  • brazing material for this joining member 4, solder, brazing material, glass, resin adhesive, or the like can be used. Silver brazing or the like can be used as the brazing material, which is excellent in heat resistance and bonding strength among bonding materials.
  • the joining member 4 has a first portion 41 positioned between the first portion 31 of the fixing member 3 and the opening portion 22a, and a first portion 41 positioned continuously with the first portion 41 and fixed.
  • a second portion 42 located between the second portion 32 of the member 3 and the outer surface 22b. That is, the opening 22a and the first portion 31 are joined by the first portion 41 of the joining member 4, and the second portion 32 and the outer side surface 22b are positioned continuously with the first portion 41 of the joining member 4. It is joined by the second part 42 .
  • the bonding area between the fixing member 3 and the base 2 is further increased, so that the bonding strength between the fixing member 3 and the base 2 can be improved.
  • the area of the second portion 32 in side view from the first direction should be larger than the area of the opening 22a.
  • the thickness D311 of the first portion 31 in the first direction is thicker than the thickness D221 of the frame portion 22 in the first direction, as shown in FIG.
  • it can be a shape that includes a curved portion. That is, a fillet is formed by the joining member 4 at the joining portion between the fixing member 3 and the base 2 . Therefore, the bonding strength of the fixing member 3 to the base 2 is improved.
  • the fillet refers to a C-plane shape.
  • the input/output terminal 5 has a first wiring layer 51 and a second wiring layer 52, and may have a structure in which multiple layers are laminated.
  • the input/output terminal 5 is located on the outer side surface 22b of the frame portion 22 away from the opening portion 22a of the base portion 21. As shown in FIG.
  • the input/output terminals 5 may be positioned on a surface different from the surface on which the opening 22a is positioned, among the outer side surfaces 22b of the frame portion 22.
  • the first wiring layer 51 and the second wiring layer 52 transmit electrical signals between the semiconductor element 6 and the external circuit board. As shown in FIG. 4, the first wiring layer 51 may be exposed on the upper surface of the input/output terminal 5 in plan view.
  • the material of each of the plurality of layers constituting the input/output terminal 5 is an insulating material such as an aluminum oxide sintered body, a mullite sintered body, a silicon carbide sintered body, an aluminum nitride sintered body. , ceramics such as silicon nitride sintered bodies and glass ceramics.
  • a method for manufacturing the input/output terminals 5 will be described.
  • green sheets corresponding to a plurality of layers forming the input/output terminals 5 are prepared.
  • a plurality of layers before firing are obtained by using a tool such as a laser, a punch, or a cutter so that each green sheet has a predetermined shape.
  • Wiring is formed using a thin film forming technique to obtain a first wiring layer 51 and a second wiring layer 52 .
  • a plurality of layers including the first wiring layer 51 and the second wiring layer 52 are press-bonded and simultaneously fired in a laminated state.
  • the second wiring layer 52 can be made larger than the frame portion 22 in plan view.
  • that the second wiring layer 52 is larger than the frame portion 22 means that the second wiring layer 52 has a portion that protrudes from the frame portion 22 in the second direction by, for example, 0.05 mm or more and 2 mm or less in a plan view. refers to what you are doing.
  • the protruding portion of the second wiring layer 52 can be used as a reference surface when laminating layers, thereby preventing lamination misalignment during fabrication of the input/output terminals 5. can be reduced, and the positional deviation between the wiring layer and the fixing member 3 can be reduced.
  • the input/output terminal 5 may be joined to the frame portion 22 via a brazing material, or may be integrally molded with the frame portion 22 .
  • a lead terminal may be connected to the first wiring layer 51 of the input/output terminal 5 .
  • a lead terminal is a member for electrically connecting to an external electric circuit board or the like.
  • the lead terminals may be connected to the first wiring layer 51 via brazing material.
  • the seal ring 8 has the function of joining the frames 22 and 7 together. As shown in FIG. 2, the seal ring 8 is arranged on the second upper surface 22d of the frame portion 22, and surrounds the semiconductor element 6 in plan view or plan perspective view.
  • Materials for the seal ring 8 include, for example, metal materials such as iron, copper, silver, nickel, chromium, cobalt, molybdenum, and tungsten, or alloys obtained by combining a plurality of these metal materials.
  • the lid 7 is located on the second upper surface 22 d of the frame 22 and protects the semiconductor element 6 together with the frame 22 . As shown in FIGS. 1 and 2, the lid 7 is joined to the frame 22 via a seal ring 8 located on the second upper surface 22d of the frame 22 to seal the semiconductor package 1. As shown in FIG.
  • the lid 7 can be made of, for example, a metal material.
  • the material of the lid body 7 includes metal materials such as iron, copper, silver, nickel, chromium, cobalt, molybdenum, and tungsten, or alloys obtained by combining a plurality of these metal materials.
  • the seal ring 8 is not provided on the second upper surface 22d of the frame portion 22, the lid body 7 may be bonded via a bonding material such as solder, brazing material, glass, or resin adhesive. .
  • a plurality of green sheets are formed. Specifically, for example, ceramic powder such as boron nitride, aluminum nitride, silicon nitride, silicon carbide, or beryllium oxide is added and mixed with an organic binder, a plasticizer, a solvent, or the like to obtain a mixture, and the mixture is formed into a layer. to produce a plurality of green sheets.
  • the plurality of green sheets described above are processed by a mold or the like, and as shown in FIG.
  • a plurality of second green sheets having 22 contours are prepared. As for the portion where the opening 22a of the frame 22 is located, some of the second green sheets are formed by providing a notch in a portion of the outer shape of the frame 22 in plan view.
  • the input/output terminals 5 are formed integrally with the frame portion 22, some of the second green sheets are formed in an outer shape in which the frame portion 22 and the input/output terminals 5 are combined.
  • vias or the like may be formed in the plurality of first green sheets and the plurality of second green sheets using a mold, laser, or the like.
  • the material of the base portion 21 is the same ceramic material as the material of the frame portion 22 is described.
  • a molten metal material is cast into a mold and solidified to form an ingot into a predetermined shape using a metalworking method or the like.
  • (b) Prepare a high melting point metal powder such as tungsten or molybdenum, and add and mix an organic binder, plasticizer, solvent, or the like to this powder to prepare a metal paste.
  • a metal paste is printed in a predetermined pattern on each of the plurality of first green sheets and the plurality of second green sheets to form wiring.
  • the metal paste may contain glass or ceramics in order to increase the bonding strength with the substrate 2 .
  • the plurality of first green sheets and second green sheets are sintered to obtain the base body 2 in which the base portion 21 and the frame portion 22 are joined.
  • the sintered base 2 is obtained with the input/output terminals 5 further joined to the frame portion 22.
  • the base 2 can be formed by joining the base 21 and the frame 22 with a brazing material or the like. .
  • the semiconductor package 1 can be obtained by bonding the fixing member 3 formed in a predetermined shape using a metal material to the frame portion 22 via the bonding member 4 . After that, the semiconductor element 6 is mounted on the first upper surface 21a of the base portion 21, and the lid body 7 is joined to the second upper surface 22d of the frame portion 22, whereby the semiconductor device 10 can be obtained.
  • a seal ring 8 is positioned on the second upper surface 22 d of the frame portion 22 , and the lid body 7 may be joined via the seal ring 8 .
  • FIG. 11 (Second embodiment) Next, a semiconductor package 1 according to a second embodiment of the present disclosure will be described with reference to FIGS. 11 to 19.
  • FIG. 11 (Second embodiment)
  • the first portion 31 of the fixing member 3 has a third upper surface 31b. 15, the opening 22a of the frame portion 22 reaches the second upper surface 22d of the frame portion 22. As shown in FIG. Furthermore, the third upper surface 31b of the first portion 31 is flush with the second upper surface 22d of the frame portion 22, as shown in FIGS. Therefore, when the lid 7 or the seal ring 8 is positioned on the second upper surface 22d of the frame portion 22, the lid 7 or the seal ring 8 is sealed to the third upper surface 31b of the fixing member 3 via the bonding material. be stopped.
  • the bonding area between the first portion 31 and the opening 22a is increased, and the bonding strength between the fixing member 3 and the base 2 can be further improved.
  • the substrate 2 is made of a ceramic material, there is no need to provide a ceramic layer on the upper side of the opening 22a. can be reduced.
  • the fact that the third upper surface 31b and the second upper surface 22d are flush with each other is not limited to the case where they are completely flush with each other.
  • a case where the third upper surface 31b of the first portion 31 is located above the second upper surface 22d of the frame portion 22 by, for example, about 0.1 mm due to an error is also included.
  • the third upper surface 31b of the first portion 31 is lower than the second upper surface 22d of the frame portion 22 by, for example, about 0.1 mm due to manufacturing errors. It may be located below.
  • the joint member 4 can accumulate on the third upper surface 31b of the first portion 31, thereby improving airtightness. becomes possible.
  • the statement that the substrate 2 is made of a ceramic material may include the case where the substrate 2 contains substances that are unavoidable in manufacturing other than the ceramic material.
  • the number of layers of the second green sheet having a notch in a part of the outer shape of the frame portion 22 in plan view is changed. be.
  • the shape of the opening 22a may be a shape combining the first linear portion 22aa and an arc.
  • the fixing member 3 may have a concave or convex holding portion 33a in a cross-sectional view that intersects with the second direction.
  • the input/output terminal 5 may have a stepped shape when viewed from the side in the second direction. That is, the input/output terminal 5 may have a two-step staircase shape when viewed from the side in the second direction.
  • the first wiring layer 51 is located on the upper surface of the upper stage
  • the second wiring layer 52 is located on the upper surface of the lower stage
  • the second wiring layer 52 extends from the outer periphery of the frame portion 22 in the first direction and / Or it may extend in the second direction
  • the second wiring layer 52 may be a wiring layer different from the above-described first wiring layer 51 and may be exposed in plan view.
  • the semiconductor package according to the present disclosure can implement the following configurations (1) to (18).
  • a base portion having a first upper surface; and a frame portion positioned on the first upper surface and having an inner surface, an outer surface, and an opening penetrating in a first direction from the outer surface to the inner surface; a substrate having a first portion located in the opening; a second portion continuous with the first portion and located on the outer surface side of the first portion; and the first portion and the second portion extending in the first direction.
  • a fixing member having a through hole penetrating through the a joining member positioned between the first portion and the opening;
  • the opening In a cross-sectional view that intersects with the first direction, the opening has a shape including at least a first straight portion, and the first portion is a second straight portion located opposite the first straight portion. It has a shape that includes a straight part,
  • a semiconductor package wherein a thickness of the bonding member in a cross-sectional view that intersects the first direction is the thinnest between the first linear portion and the second linear portion.
  • the frame has a second upper surface;
  • the first part has a third upper surface, the opening reaches the second upper surface of the frame,
  • the semiconductor package according to any one of the configurations (1) to (3), wherein the third upper surface of the first portion is flush with the second upper surface of the frame portion.
  • the joining member includes a first portion located between the first portion and the opening, and a portion continuously located between the first portion and between the second portion and the outer surface.
  • the length of the first portion in the third direction perpendicular to the first direction and the second direction is the length of the second portion in the third direction.
  • the base includes an input/output terminal positioned apart from the opening on the outer surface and having at least a first wiring layer and a second wiring layer;
  • the semiconductor device according to the present disclosure can implement the following configuration (19).
  • the thickness of the bonding member between the first straight portion and the second straight portion is positioned between the other first portion and the opening.
  • the bonding member thinner than the thickness, the surface having the first linear portion and the surface having the second linear portion can be used as reference surfaces, thereby aligning the fixing member with the opening of the base. can be facilitated. Accordingly, it is possible to provide a semiconductor package and a semiconductor device capable of reducing the occurrence of optical axis misalignment.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Light Receiving Elements (AREA)
  • Optical Couplings Of Light Guides (AREA)
  • Semiconductor Lasers (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
PCT/JP2022/040205 2021-10-28 2022-10-27 半導体パッケージおよび半導体装置 Ceased WO2023074811A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
US18/704,766 US20240421556A1 (en) 2021-10-28 2022-10-27 Semiconductor package and semiconductor apparatus
JP2023556644A JP7685609B2 (ja) 2021-10-28 2022-10-27 半導体パッケージおよび半導体装置
CN202280072278.2A CN118160174A (zh) 2021-10-28 2022-10-27 半导体封装体以及半导体装置
JP2025066243A JP2025108575A (ja) 2021-10-28 2025-04-14 半導体パッケージおよび半導体装置

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JP2021176646 2021-10-28
JP2021-176646 2021-10-28

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JPH07218776A (ja) * 1994-02-04 1995-08-18 Fujitsu Ltd 光半導体モジュールの実装構造
JP2005050836A (ja) * 2003-07-28 2005-02-24 Kyocera Corp 半導体素子収納用パッケージおよび半導体装置
JP2010243732A (ja) * 2009-04-03 2010-10-28 Fujikura Ltd 光モジュール及びその製造方法
US20130053662A1 (en) * 2011-08-30 2013-02-28 Kestrel Labs, Inc. Laser to Fiber Optical Coupling in Photoplethysmography
KR20140142811A (ko) * 2013-06-04 2014-12-15 한국광기술원 레이저 다이오드 패키지 및 그 제조 방법
JP2016115736A (ja) * 2014-12-12 2016-06-23 京セラ株式会社 半導体素子パッケージおよび半導体装置
JP2017152557A (ja) * 2016-02-25 2017-08-31 京セラ株式会社 光半導体素子収納用パッケージおよび光半導体装置
WO2019059164A1 (ja) * 2017-09-19 2019-03-28 京セラ株式会社 発光素子収納用部材、アレイ部材および発光装置

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JP2000131567A (ja) * 1998-10-22 2000-05-12 Mitsubishi Electric Corp 半導体レーザモジュール
JP2015099886A (ja) 2013-11-20 2015-05-28 Ｎｇｋエレクトロデバイス株式会社 電子部品収納用パッケージ

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Publication number Priority date Publication date Assignee Title
JPH07218776A (ja) * 1994-02-04 1995-08-18 Fujitsu Ltd 光半導体モジュールの実装構造
JP2005050836A (ja) * 2003-07-28 2005-02-24 Kyocera Corp 半導体素子収納用パッケージおよび半導体装置
JP2010243732A (ja) * 2009-04-03 2010-10-28 Fujikura Ltd 光モジュール及びその製造方法
US20130053662A1 (en) * 2011-08-30 2013-02-28 Kestrel Labs, Inc. Laser to Fiber Optical Coupling in Photoplethysmography
KR20140142811A (ko) * 2013-06-04 2014-12-15 한국광기술원 레이저 다이오드 패키지 및 그 제조 방법
JP2016115736A (ja) * 2014-12-12 2016-06-23 京セラ株式会社 半導体素子パッケージおよび半導体装置
JP2017152557A (ja) * 2016-02-25 2017-08-31 京セラ株式会社 光半導体素子収納用パッケージおよび光半導体装置
WO2019059164A1 (ja) * 2017-09-19 2019-03-28 京セラ株式会社 発光素子収納用部材、アレイ部材および発光装置

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JP2025108575A (ja) 2025-07-23
US20240421556A1 (en) 2024-12-19
JPWO2023074811A1 (https=) 2023-05-04
JP7685609B2 (ja) 2025-05-29

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