WO2023037838A1 - 窒化物半導体基板の製造方法 - Google Patents
窒化物半導体基板の製造方法 Download PDFInfo
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- 239000000758 substrate Substances 0.000 title claims abstract description 99
- 239000004065 semiconductor Substances 0.000 title claims abstract description 44
- 150000004767 nitrides Chemical class 0.000 title claims abstract description 43
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 27
- 238000000034 method Methods 0.000 title claims abstract description 26
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract description 31
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 26
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 26
- 239000012299 nitrogen atmosphere Substances 0.000 claims abstract description 14
- 229910002704 AlGaN Inorganic materials 0.000 claims abstract description 8
- 238000010438 heat treatment Methods 0.000 claims abstract description 8
- 238000009792 diffusion process Methods 0.000 claims description 11
- 239000013078 crystal Substances 0.000 claims description 9
- 230000015572 biosynthetic process Effects 0.000 claims description 7
- 239000010408 film Substances 0.000 description 58
- 239000010410 layer Substances 0.000 description 47
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 230000000052 comparative effect Effects 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 238000004151 rapid thermal annealing Methods 0.000 description 5
- 235000012431 wafers Nutrition 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- 239000012298 atmosphere Substances 0.000 description 4
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000005533 two-dimensional electron gas Effects 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
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- C—CHEMISTRY; METALLURGY
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/10—Heating of the reaction chamber or the substrate
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/38—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
- H01L21/2003—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate
- H01L21/2015—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate the substrate being of crystalline semiconductor material, e.g. lattice adaptation, heteroepitaxy
Definitions
- the present invention relates to a method for manufacturing a nitride semiconductor substrate.
- it relates to a method of manufacturing a nitride semiconductor substrate for high frequency devices.
- Nitride semiconductors such as GaN and AlN can be used to fabricate high electron mobility transistors (HEMTs) using two-dimensional electron gas and high withstand voltage electronic devices.
- HEMTs high electron mobility transistors
- nitride wafers by growing these nitride semiconductors on a substrate, and sapphire substrates and SiC substrates are used as substrates.
- epitaxial growth by vapor phase growth on a silicon substrate is used.
- Production of an epitaxially grown film on a silicon substrate by vapor phase epitaxy is advantageous in terms of device productivity and heat dissipation because a substrate having a larger diameter can be used than a sapphire substrate or a SiC substrate.
- An AlN buffer layer, a buffer layer, and a GaN-HEMT structure epitaxial layer are stacked on a single crystal silicon substrate to form an epitaxial wafer for power devices and RF devices.
- a high-resistance substrate is used as a single-crystal silicon substrate for epitaxial wafers for RF devices.
- An AlN buffer layer is stacked on a high resistance single crystal silicon substrate, superlattice structure buffer layers (SLs) as buffer layers are stacked thereon, and HEMT structures are epitaxially grown thereon.
- SLs superlattice structure buffer layers
- the growth rate of AlN is slow, the total epitaxial growth time becomes long, and the Al of the AlN buffer layer becomes a high resistance single crystal. It is known that it diffuses into the silicon substrate, forms a low-resistance layer, and forms a channel.
- the epitaxial growth technology of 3C--SiC on Si is recently known. That is, the intermediate layer 3C--SiC layer is inserted as AlN/3C--SiC/Si.
- the 3C-SiC layer introduces an Al diffusion prevention layer more simply and efficiently.
- Patent Document 1 discloses a semiconductor structure comprising SiN between a silicon substrate and an aluminum nitride layer.
- SiN can be formed prior to reaction.
- SiN has an amorphous, single-layer crystal structure, and polycrystal. If amorphous, anything grown on it will polyize and not grow epitaxially.
- CVD process a CVD process
- it is formed by a CVD process, but even if a CVD thin film (2 nm) is deposited, it will become polycrystalline.
- ammonia gas is used as the nitrogen source gas, but if ammonia is used, the epitaxial wafer becomes cloudy.
- An object of the present invention is to provide a method for manufacturing a nitride semiconductor substrate that can prevent the above.
- a method for manufacturing a nitride semiconductor substrate in which a nitride semiconductor is formed on a substrate for film formation comprising: (1) a step of heat-treating a film-forming substrate made of single crystal silicon in a nitrogen atmosphere to form a silicon nitride film on the film-forming substrate; (2) growing an AlN film on the silicon nitride film; and (3) growing a GaN film, an AlGaN film, or both on the AlN film.
- the heat treatment is preferably performed in an RTA furnace at 1100 to 1300° C. for 1 to 120 seconds.
- the silicon nitride film is a single crystal.
- such a silicon nitride film can be formed.
- nitride semiconductor substrate having an Al diffusion concentration of 4e15 atoms/cm 3 or less on the growth substrate surface.
- a nitride semiconductor substrate in which diffusion of Al to the growth substrate surface is suppressed in this way is particularly useful in fabricating high-frequency devices.
- AlN layer when an AlN layer is epitaxially grown on a single crystal silicon substrate, particularly a high resistance single crystal silicon substrate, and a GaN or AlGaN layer is epitaxially grown thereon, Al becomes a single crystal. It is possible to provide a method for manufacturing a nitride semiconductor substrate that can prevent diffusion into a silicon substrate and that does not cause fogging.
- FIG. 4 is a photograph of nitride semiconductor substrates manufactured in Example and Comparative Examples 1 and 2.
- FIG. 10 shows backside SIMS measurement results of nitride semiconductor substrates manufactured in Example and Comparative Example 3.
- FIG. 1 is a cross-sectional photograph of a nitride semiconductor substrate manufactured in Example 1.
- the nitriding is performed to prevent Al from diffusing into the high-resistance single-crystal silicon substrate. It has been desired to develop a method for manufacturing a semiconductor substrate.
- a process of forming a silicon nitride film by heat-treating a deposition substrate made of single crystal silicon in a nitrogen atmosphere a process of growing an AlN film on the silicon nitride film, and a process of growing an AlN film.
- a method for manufacturing a nitride semiconductor substrate that includes a step of growing a GaN film, an AlGaN film, or both on a film can prevent Al from diffusing into a high-resistance single-crystal silicon substrate and cause clouding.
- the inventors have found that it is possible to manufacture a nitride semiconductor substrate free from defects, and completed the present invention.
- the present invention is a method for manufacturing a nitride semiconductor substrate in which a nitride semiconductor is formed on a film formation substrate, comprising: (1) heat-treating a film formation substrate made of single crystal silicon in a nitrogen atmosphere; (2) growing an AlN film on the silicon nitride film; and (3) a GaN film, an AlGaN film, or both on the AlN film.
- a method for manufacturing a nitride semiconductor substrate including the step of growing
- a method for manufacturing a nitride semiconductor substrate according to the present invention includes the following steps (1) to (3). Hereinafter, each step will be described in detail with reference to the flow of the nitride semiconductor manufacturing method of the present invention shown in FIG.
- Step (1) is a step of heat-treating a film-forming substrate made of single crystal silicon in a nitrogen atmosphere to form a silicon nitride film on the film-forming substrate.
- a film-forming substrate (silicon substrate) 1 made of single crystal silicon is placed in an RTA (Rapid Thermal Annealing) furnace, and heated at 1100 to 1300° C. for 1 to 10 minutes in a nitrogen atmosphere, for example. Heat treatment is performed for 120 seconds, preferably 1150 to 1250° C. for 2 to 20 seconds, particularly 1200° C. for 10 seconds.
- a film (SiN film) 2 is formed.
- the silicon nitride film 2 may be formed only on the front surface side of the film formation substrate, but may also be formed over the entire film formation substrate 1 having a front surface and a back surface.
- the present invention is particularly characterized by forming a silicon nitride film in a nitrogen atmosphere.
- the nitrogen atmosphere means a 100% nitrogen gas atmosphere or a mixed atmosphere of nitrogen gas and inert gas. If a silicon nitride film is formed, it is possible to prevent Al from diffusing from an AlN buffer layer, which will be described later, to the surface of the high-resistance single-crystal silicon growth substrate, thereby preventing the formation of a low-resistance layer. If formed by heat treatment, an epitaxial layer of a nitride semiconductor without haze can be grown on the silicon nitride film in subsequent steps.
- the silicon nitride film is formed by a CVD process or heat treatment in an ammonia gas atmosphere instead of in a nitrogen atmosphere, a polycrystalline layer is formed on the silicon nitride film when the nitride semiconductor is grown in subsequent steps. or haze may occur in the grown epitaxial layer.
- the film-forming substrate made of single-crystal silicon is not particularly limited, and may be either CZ single-crystal silicon or FZ single-crystal silicon. .
- the deposition substrate is preferably a high resistance single crystal silicon substrate.
- the resistivity is not particularly limited, but the lower limit is, for example, 1 ⁇ cm or more, preferably 10 ⁇ cm or more, more preferably 100 ⁇ cm or more, and the upper limit is, for example, 3000 ⁇ cm or less, preferably 1000 ⁇ cm or less, more preferably 500 ⁇ cm or less.
- Step (2) is a step of growing an AlN film on the silicon nitride film.
- an AlN film (AlN buffer layer) 3 is formed on the silicon nitride film 2 by MOVPE to a thickness of, for example, 20 to 500 nm, preferably 50 to 300 nm, more preferably 100 to 200 nm, particularly Grow at 160 nm.
- Step (3) is a step of growing a GaN film, an AlGaN film, or both on the AlN film.
- a buffer layer 4 made of a multilayer film made of an AlN layer or a GaN layer, and a nitride semiconductor made of a GaN-HEMT layer 5 are made to have a total thickness of 0.1 to 20 ⁇ m, preferably 0 ⁇ m. .5 to 10 ⁇ m, preferably 1 to 5 ⁇ m, particularly about 2.7 ⁇ m, is epitaxially grown.
- the silicon nitride film can prevent Al from diffusing from the AlN buffer layer to the surface of the high-resistance single-crystal silicon growth substrate to form a low-resistance layer.
- the epitaxial layer thus obtained can also produce a nitride semiconductor substrate without haze.
- a nitride semiconductor substrate having an Al diffusion concentration of 4e15 atoms/cm 3 or less, preferably 3e15 atoms/cm 3 or less, more preferably 2e15 atoms/cm 3 or less on the growth substrate surface can be manufactured.
- the lower limit of the Al diffusion concentration is not particularly limited, it can be, for example, 0 atoms/cm 3 or more, or 1e13 atoms/cm 3 or more.
- SIMS secondary ion mass spectrometry
- Example 2 A 2-nm-thick SiN film (placed in an RTA furnace and subjected to SiN conversion at 1200° C. for 10 seconds in an N 2 atmosphere) was applied to the surface of a single crystal silicon substrate having a diameter of 150 mm, a plane orientation (111), and a resistivity of 100 ⁇ cm.
- An AlN buffer layer, a buffer layer, and a GaN-HEMT structure were epitaxially grown.
- FIG. 4 shows the observation of the cross section of the wafer after the epitaxial growth. As can be seen from FIG. 4, it can be confirmed that a flat single crystal SiN layer is formed between the silicon substrate and the AlN film. As a result of electron beam diffraction, the AlN layer was a single crystal.
- FIG. 3 shows the result of investigation by backside SIMS on the Al concentration from the back side of the single crystal silicon substrate to the SiN film.
- the place where the nitrogen (N) concentration rises sharply represents the interface between the single crystal silicon substrate and the AlN film thereon (the silicon nitride film has a thickness of only 2 nm).
- the SiN film has a thickness of only 2 nm.
- (Comparative example 2) A 2-nm-thick SiN film (put in a PE-CVD furnace, SiH 4 +NH 3 +N 2 atmosphere at 300° C. for 3 seconds to convert the surface to SiN film on the surface of a single crystal silicon substrate having a diameter of 150 mm, a plane orientation (111), and a resistivity of 100 ⁇ cm. ), an AlN buffer layer, a buffer layer, and a GaN-HEMT structure were epitaxially grown on the Si substrate. As shown in FIG. 2(c), it can be seen that the epitaxial layer grows cloudy.
- Comparative Example 3 An AlN buffer layer, a buffer layer, and a GaN-HEMT structure were epitaxially grown directly on the Si substrate surface without forming a SiN film on the Si substrate surface. As shown in FIG. 3, it can be seen that the nitride semiconductor substrate of Comparative Example 3 has a higher Al concentration on the surface of the silicon substrate than that of the Example.
- the silicon nitride film between the single crystal silicon substrate and the AlN film is formed by heat treatment in a nitrogen atmosphere, so that Al becomes a high resistance single crystal. It can be seen that a nitride semiconductor substrate can be manufactured that can prevent diffusion into the silicon substrate and that does not cause fogging. On the other hand, in Comparative Examples 1 and 2 in which the silicon nitride film was formed using conditions other than the nitrogen atmosphere, fogging occurred in the epitaxial layer. cannot be prevented from spreading to
- the present invention is not limited to the above embodiments.
- the above-described embodiment is an example, and any device having substantially the same configuration as the technical idea described in the claims of the present invention and exhibiting the same effect is the present invention. included in the technical scope of
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Abstract
Description
成膜用基板上に窒化物半導体が形成された窒化物半導体基板の製造方法であって、
(1)単結晶シリコンからなる成膜用基板を窒素雰囲気で熱処理することで、前記成膜用基板上にシリコン窒化膜を形成する工程、
(2)前記シリコン窒化膜上にAlN膜を成長させる工程、及び
(3)前記AlN膜上にGaN膜、AlGaN膜、又はその両方を成長させる工程
を含む窒化物半導体基板の製造方法を提供する。
本発明の窒化物半導体基板の製造方法は、下記工程(1)~(3)を含む。以下、図1の本発明の窒化物半導体の製造方法のフローを参照しながら、各工程について詳細に説明する。
工程(1)は、単結晶シリコンからなる成膜用基板を窒素雰囲気で熱処理することで、成膜用基板上にシリコン窒化膜を形成する工程である。
工程(2)は、シリコン窒化膜上にAlN膜を成長させる工程である。
工程(3)は、AlN膜上にGaN膜、AlGaN膜、又はその両方を成長させる工程である。
直径150mm、面方位(111)、抵抗率100Ωcmの単結晶シリコン基板表面に厚さ2nmのSiN膜(RTA炉に入れ、N2雰囲気1200℃10秒で表面をSiN化)を付け、その上にAlNバッファ層、緩衝層、GaN-HEMT構造をエピタキシャル成長させた。エピタキシャル成長後、ウェーハ断面を観察した様子を図4に示す。図4から判るように、シリコン基板とAlN膜の間にフラットな単一結晶SiN層が形成されていることが確認できる。電子線回折の結果、AlN層は単結晶であった。
直径150mm、面方位(111)、抵抗率100Ωcmの単結晶シリコン基板表面に厚さ2nmのSiN膜(RTA炉に入れ、NH3+Ar雰囲気中1175℃10秒で表面をSiN化)を付けたSi基板上にAlNバッファ層、緩衝層、GaN-HEMT構造をエピタキシャル成長させた。図2(b)に示すようにエピタキシャル層が曇り成長しているのが判る。
直径150mm、面方位(111)、抵抗率100Ωcmの単結晶シリコン基板表面に厚さ2nmのSiN膜(PE-CVD炉に入れ、SiH4+NH3+N2雰囲気中300℃3秒で表面をSiN化)を付けたSi基板上にAlNバッファ層、緩衝層、GaN-HEMT構造をエピタキシャル成長させた。図2(c)に示すようにエピタキシャル層が曇り成長しているのが判る。
Si基板表面にSiN膜を設けることなく、Si基板表面上に直接AlNバッファ層、緩衝層、GaN-HEMT構造をエピタキシャル成長させた。図3に示すように、比較例3の窒化物半導体基板は実施例と比べてシリコン基板表面のAl濃度が高いのが判る。
Claims (4)
- 成膜用基板上に窒化物半導体が形成された窒化物半導体基板の製造方法であって、
(1)単結晶シリコンからなる成膜用基板を窒素雰囲気で熱処理することで、前記成膜用基板上にシリコン窒化膜を形成する工程、
(2)前記シリコン窒化膜上にAlN膜を成長させる工程、及び
(3)前記AlN膜上にGaN膜、AlGaN膜、又はその両方を成長させる工程
を含むことを特徴とする窒化物半導体基板の製造方法。 - 前記工程(1)において、前記熱処理はRTA炉で1100~1300℃で1~120秒の熱処理を行うことを特徴とする請求項1に記載の窒化物半導体基板の製造方法。
- 前記シリコン窒化膜が単結晶であることを特徴とする請求項1又は請求項2に記載の窒化物半導体基板の製造方法。
- 成長用基板表面のAl拡散濃度が4e15atoms/cm3以下の窒化物半導体基板を製造することを特徴とする請求項1から請求項3のいずれか一項に記載の窒化物半導体基板の製造方法。
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Citations (6)
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JPS6272118A (ja) * | 1985-09-25 | 1987-04-02 | Fujitsu Ltd | 半導体装置の製造方法 |
JPH0864913A (ja) * | 1994-08-26 | 1996-03-08 | Rohm Co Ltd | 半導体発光素子およびその製法 |
JP2004507071A (ja) * | 1999-12-21 | 2004-03-04 | マットソン サーマル プロダクツ インコーポレイテッド | 急速熱N2処理による、Si(100)上の超薄窒化物の成長 |
JP2008522447A (ja) | 2004-12-03 | 2008-06-26 | ニトロネックス コーポレイション | シリコン基板からなるiii族窒化物材料構造体 |
JP2013033887A (ja) * | 2011-08-03 | 2013-02-14 | Covalent Materials Corp | 窒化物半導体基板の製造方法 |
JP2021072441A (ja) * | 2019-10-24 | 2021-05-06 | 信越半導体株式会社 | 半導体基板の製造方法及び半導体基板 |
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- 2022-08-18 CN CN202280059910.XA patent/CN117916412A/zh active Pending
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Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
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JPS6272118A (ja) * | 1985-09-25 | 1987-04-02 | Fujitsu Ltd | 半導体装置の製造方法 |
JPH0864913A (ja) * | 1994-08-26 | 1996-03-08 | Rohm Co Ltd | 半導体発光素子およびその製法 |
JP2004507071A (ja) * | 1999-12-21 | 2004-03-04 | マットソン サーマル プロダクツ インコーポレイテッド | 急速熱N2処理による、Si(100)上の超薄窒化物の成長 |
JP2008522447A (ja) | 2004-12-03 | 2008-06-26 | ニトロネックス コーポレイション | シリコン基板からなるiii族窒化物材料構造体 |
JP2013033887A (ja) * | 2011-08-03 | 2013-02-14 | Covalent Materials Corp | 窒化物半導体基板の製造方法 |
JP2021072441A (ja) * | 2019-10-24 | 2021-05-06 | 信越半導体株式会社 | 半導体基板の製造方法及び半導体基板 |
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