WO2023031718A1 - 表示装置、および電子機器 - Google Patents

表示装置、および電子機器 Download PDF

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Publication number
WO2023031718A1
WO2023031718A1 PCT/IB2022/057727 IB2022057727W WO2023031718A1 WO 2023031718 A1 WO2023031718 A1 WO 2023031718A1 IB 2022057727 W IB2022057727 W IB 2022057727W WO 2023031718 A1 WO2023031718 A1 WO 2023031718A1
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Prior art keywords
light
layer
lens
pixel
emitting
Prior art date
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Ceased
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PCT/IB2022/057727
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English (en)
French (fr)
Japanese (ja)
Inventor
池田寿雄
初見亮
中村太紀
廣瀬丈也
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to US18/685,268 priority Critical patent/US12342707B2/en
Priority to KR1020247008706A priority patent/KR20240069722A/ko
Priority to JP2023544791A priority patent/JPWO2023031718A1/ja
Priority to CN202280056219.6A priority patent/CN117836835A/zh
Publication of WO2023031718A1 publication Critical patent/WO2023031718A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/87—Light-trapping means
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
    • G06V40/00—Recognition of biometric, human-related or animal-related patterns in image or video data
    • G06V40/10—Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
    • G06V40/12—Fingerprints or palmprints
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
    • G06V40/00—Recognition of biometric, human-related or animal-related patterns in image or video data
    • G06V40/10—Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
    • G06V40/12—Fingerprints or palmprints
    • G06V40/13—Sensors therefor
    • G06V40/1318—Sensors therefor using electro-optical elements or layers, e.g. electroluminescent sensing
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/02—Details
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional [2D] radiating surfaces
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional [2D] radiating surfaces
    • H05B33/22—Light sources with substantially two-dimensional [2D] radiating surfaces characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/81—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
    • H10K39/30—Devices controlled by radiation
    • H10K39/32—Organic image sensors
    • H10K39/34—Organic image sensors integrated with organic light-emitting diodes [OLED]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/125—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
    • H10K50/13—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light comprising stacked EL layers within one EL unit
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/19—Tandem OLEDs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/60—OLEDs integrated with inorganic light-sensitive elements, e.g. with inorganic solar cells or inorganic photodiodes
    • H10K59/65—OLEDs integrated with inorganic image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/875—Arrangements for extracting light from the devices
    • H10K59/879—Arrangements for extracting light from the devices comprising refractive means, e.g. lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/8791—Arrangements for improving contrast, e.g. preventing reflection of ambient light
    • H10K59/8792—Arrangements for improving contrast, e.g. preventing reflection of ambient light comprising light absorbing layers, e.g. black layers
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
    • G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
    • G06F2203/04108—Touchless 2D- digitiser, i.e. digitiser detecting the X/Y position of the input means, finger or stylus, also when it does not touch, but is proximate to the digitiser's interaction surface without distance measurement in the Z direction
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/042—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by opto-electronic means

Definitions

  • One embodiment of the present invention relates to a display device.
  • one embodiment of the present invention is not limited to the above technical field.
  • Technical fields of one embodiment of the present invention include semiconductor devices, display devices, light-emitting devices, power storage devices, storage devices, electronic devices, lighting devices, input devices (e.g., touch sensors), input/output devices (e.g., touch panels), Their driving method or their manufacturing method can be mentioned as an example.
  • Display devices have been applied to various uses. Applications of large display devices include home television devices, digital signage (digital signage), PIDs (Public Information Displays), and the like. Display devices are also widely used in smartphones, tablet terminals, and the like that have touch panels.
  • High-definition display devices are required for, for example, virtual reality (VR), augmented reality (AR), alternative reality (SR), and mixed reality (MR).
  • VR virtual reality
  • AR augmented reality
  • SR alternative reality
  • MR mixed reality
  • a light-emitting device including a light-emitting device (also referred to as a light-emitting element) has been developed.
  • a light-emitting device also referred to as an EL device or EL element
  • EL the phenomenon of electroluminescence
  • EL is a DC constant-voltage power supply that can easily be made thin and light, can respond quickly to an input signal, and It has a feature that it can be driven using
  • Patent Document 1 discloses a display device for VR using an organic EL device (also referred to as an organic EL element).
  • Patent Document 2 discloses a method of forming a microlens using a radiation-sensitive resin composition.
  • the display device can have an imaging function.
  • an image such as a fingerprint or a palm print can be obtained by touching the panel surface with a finger or palm and taking an image. Images such as fingerprints and palm prints can be used for personal authentication.
  • the distance between the panel surface and the light-receiving device is short, it is difficult to provide a lens that collects light rays and forms an image. Therefore, it is preferable to form a pinhole on the light-receiving device to reduce the light beam and form an image.
  • an object of one embodiment of the present invention is to provide a display device having an imaging function.
  • An object is to provide a display device having a structure for increasing the sensitivity of a light receiving device.
  • Another object is to provide a display device having an authentication function.
  • Another object is to provide a high-definition display device.
  • Another object is to provide a high-resolution display device.
  • Another object is to provide a high-luminance display device.
  • Another object is to provide a highly reliable display device.
  • One embodiment of the present invention includes a first pixel and a second pixel, the first pixel including a light-emitting device and the second pixel including a light-receiving device and a lens.
  • the light-emitting device and the light-receiving device have common electrodes;
  • the lens and the light-receiving device have overlapping regions;
  • the width of the lens is greater than the width of the light-receiving part of the light-receiving device;
  • the cross-sectional shape in the direction of the thickness including the and the second pixel are adjacent display devices.
  • a light shielding layer is preferably formed around the lens.
  • the surface including the upper base of the trapezoid can have a convex surface.
  • the lens and the light receiving device are spaced apart so that their centers overlap each other.
  • Another aspect of the invention has a first pixel and a second pixel, the first pixel having a light emitting device and a first lens, the second pixel having , a light receiving device, and a second lens, the light emitting device and the light receiving device having common electrodes, the first lens and the light emitting device having overlapping regions, the second lens and the light receiving device
  • the device has overlapping regions, the width of the first lens is greater than the width of the light emitting portion of the light emitting device, the width of the second lens is greater than the width of the light receiving portion of the light receiving device, and the first lens has a width greater than the width of the light receiving portion of the light receiving device.
  • a surface including the substantially trapezoidal legs is a convex curved surface, and includes the substantially trapezoidal upper base of the first lens
  • the surface and the light-emitting portion are provided to face each other, the surface including the upper base of the substantially trapezoidal shape of the second lens and the light-receiving portion are provided to face each other, and the first pixel and the second pixel are adjacent to each other. It is a display device provided as a
  • a light shielding layer can be formed around the first lens and the second lens.
  • the light shielding layer can be formed only around the second lens.
  • the surface including the upper base of the approximately trapezoid can have a convex curved surface.
  • the first lens and the light-emitting device are spaced apart so as to overlap each other's centers, and the second lens and the light-receiving device are spaced apart so as to overlap each other's centers.
  • the light emitting device may be tandem.
  • a tandem-type light-emitting device preferably has a plurality of light-emitting units, and the plurality of light-emitting units emit light of the same color.
  • Another embodiment of the present invention is an electronic device that includes the above display device, obtains a fingerprint image with a light receiving device, and performs fingerprint authentication.
  • a display device having an imaging function can be provided. It is possible to provide a display device having a configuration that enhances the sensitivity of the light receiving device.
  • a display device having an authentication function can be provided.
  • a high-definition display device can be provided.
  • a high-resolution display device can be provided.
  • a high-luminance display device can be provided.
  • a highly reliable display device can be provided.
  • FIG. 1A is a top view illustrating an example of a display device.
  • FIG. 1B is a cross-sectional view illustrating an example of a display device;
  • FIG. 1C is a diagram illustrating the laminated structure of the light emitting unit.
  • 2A and 2B are cross-sectional views illustrating elements of the display device.
  • 3A and 3B are cross-sectional views illustrating elements of the display device.
  • 4A and 4B are cross-sectional views illustrating elements of the display device.
  • FIG. 5A is a top view and a perspective view illustrating elements of the display device.
  • FIG. 5B is a top view illustrating the elements of the display device.
  • 6A and 6B are top and perspective views illustrating elements of the display device.
  • FIG. 7A and 7B are cross-sectional views illustrating elements of the display device.
  • 8A to 8E are diagrams explaining the simulation model.
  • FIG. 9 is a diagram for explaining simulation results.
  • 10A and 10B are cross-sectional views illustrating elements of the display device.
  • 11A and 11B are cross-sectional views illustrating elements of the display device.
  • 12A to 12F are cross-sectional views illustrating an example of a method for manufacturing a lens.
  • 13A to 13C are cross-sectional SEM photographs illustrating the lens.
  • 14A to 14K are diagrams illustrating examples of pixels.
  • 15A and 15B are perspective views illustrating an example of a display device.
  • FIG. 16 is a cross-sectional view illustrating an example of a display device.
  • FIG. 17 is a cross-sectional view illustrating an example of a display device
  • FIG. 18 is a cross-sectional view illustrating an example of a display device.
  • FIG. 19 is a cross-sectional view illustrating an example of a display device;
  • FIG. 20 is a perspective view illustrating an example of a display device;
  • FIG. 21A is a cross-sectional view illustrating an example of a display device;
  • 21B and 21C are cross-sectional views illustrating examples of transistors.
  • 22A and 22B are cross-sectional views illustrating an example of a display device.
  • 23A and 23B are cross-sectional views illustrating an example of a display device.
  • 24A and 24B are cross-sectional views illustrating an example of a display device.
  • 25A and 25B are cross-sectional views illustrating an example of a display device.
  • 26A to 26C are diagrams illustrating configuration examples of display devices.
  • 27A to 27D are diagrams illustrating examples of electronic devices.
  • 28A to 28F are diagrams illustrating examples of electronic devices.
  • 29A to 29G are diagrams illustrating examples of electronic devices.
  • film and “layer” can be interchanged depending on the case or situation.
  • conductive layer can be changed to the term “conductive film.”
  • insulating film can be changed to the term “insulating layer”.
  • a device manufactured using a metal mask or FMM may be referred to as a device with an MM (metal mask) structure.
  • a device manufactured without using a metal mask or FMM may be referred to as a device with an MML (metal maskless) structure.
  • holes or electrons are sometimes referred to as “carriers”.
  • the hole injection layer or electron injection layer is referred to as a "carrier injection layer”
  • the hole transport layer or electron transport layer is referred to as a “carrier transport layer”
  • the hole blocking layer or electron blocking layer is referred to as a "carrier It is sometimes called a block layer.
  • the carrier injection layer, the carrier transport layer, and the carrier block layer described above may not be clearly distinguished from each other due to their cross-sectional shape, characteristics, or the like.
  • one layer may function as two or three of the carrier injection layer, the carrier transport layer, and the carrier block layer.
  • a light-emitting device (also referred to as a light-emitting element) includes an EL layer between a pair of electrodes.
  • the EL layer has at least a light-emitting layer.
  • the layers (also referred to as functional layers) included in the EL layer include a light-emitting layer, a carrier-injection layer (a hole-injection layer and an electron-injection layer), a carrier-transport layer (a hole-transport layer and an electron-transport layer), and a carrier layer.
  • a light-receiving device also referred to as a light-receiving element
  • one of a pair of electrodes may be referred to as a common electrode and the other may be referred to as a pixel electrode.
  • a tapered shape refers to a shape in which at least a part of the side surface of the structure is inclined with respect to the substrate surface. For example, it is preferable to have a region where the angle between the inclined side surface and the substrate surface (also referred to as a taper angle) is less than 90°. Note that the side surfaces of the structure and the substrate surface are not necessarily completely flat, and may be substantially planar with a fine curvature or substantially planar with fine unevenness.
  • a mask layer is positioned above at least a light-emitting layer (more specifically, a layer processed into an island shape among layers constituting an EL layer) or an active layer. It has a function of protecting the light-emitting layer or the active layer during the process.
  • the mask layer may be removed during the fabrication process, or at least a portion of the mask layer may remain.
  • One embodiment of the present invention is a display device that has a light-emitting device and a light-receiving device that are separately manufactured for each emission color and is capable of full-color display and imaging operation.
  • the light emitting device may be of a tandem type. By using a tandem light-emitting device, a highly reliable display device capable of high-luminance display can be obtained.
  • each color light-emitting device for example, blue (B), green (G), and red (R)
  • a structure in which at least light-emitting layers are separately formed or separately painted is referred to as SBS (side-by-side). Side) structure.
  • SBS side-by-side
  • Side Side structure.
  • the SBS structure can optimize the materials and configuration for each light-emitting device, thus improving the brightness and reliability of the display device.
  • island-shaped light-emitting layers with different emission colors are formed. Also in a light-receiving device, an active layer (a layer having a photoelectric conversion function) is formed in an island shape.
  • an island shape indicates a state in which two or more layers using the same material formed in the same step are physically separated.
  • an island-shaped light-emitting layer means that the light-emitting layer is physically separated from an adjacent light-emitting layer.
  • the island-shaped light-emitting layer and active layer can be formed by a vacuum deposition method using a metal mask.
  • the shape and formation position of the island-shaped light emitting layer may deviate from the design due to the effects of misalignment between the metal mask and the substrate, bending of the metal mask, and wraparound of the deposited material. . Therefore, the formation method using a metal mask is not suitable for achieving high definition and high aperture ratio of display devices.
  • the manufacturing yield will be low due to low dimensional accuracy of the metal mask and deformation due to heat or the like.
  • a light-emitting layer and an active layer are processed into fine patterns by a lithography step and an etching step. Specifically, after forming a pixel electrode for each sub-pixel, a film to be a light-emitting layer or an active layer is formed on the plurality of pixel electrodes. After that, the film is processed using a lithography process and an etching process to form one island-shaped light-emitting layer or active layer for one pixel electrode. Thereby, an island-shaped light-emitting layer or active layer can be formed for each sub-pixel. Note that in this specification and the like, a sub-pixel is sometimes simply referred to as a pixel.
  • a functional layer is preferably provided between the light-emitting layer or active layer and the pixel electrode. Moreover, the functional layer is preferably processed into an island shape in the same pattern as that of the light-emitting layer or the active layer.
  • the functional layer means, for example, a carrier injection layer, a carrier transport layer, or a carrier block layer, more specifically a hole injection layer, a hole transport layer, an electron block layer, or the like.
  • the functional layer When the functional layer is used as a common layer between adjacent sub-pixels, lateral leak current may occur due to the functional layer.
  • the functional layer is processed into an island shape in the same pattern as the light-emitting layer; Leakage current can be made extremely small.
  • a light-emitting device and a light-receiving device that emit light of different colors
  • some layers can be deposited in the same process.
  • part of the EL layers included in the light-emitting device is formed in an island shape for each emission color.
  • the active layer of the light-receiving device is formed in an island shape.
  • the remaining layers (sometimes referred to as common layers) constituting the light-emitting device and the light-receiving device, and a common electrode (also referred to as an upper electrode) shared by the light-emitting device and the light-receiving device are formed.
  • the common layer is a layer with relatively high conductivity. Therefore, when the common layer comes into contact with the side surface of a part of the EL layer formed like an island, the side surface of the active layer, or the side surface of the pixel electrode, there is a risk that the upper and lower layers in the light emitting device and the light receiving device will be short-circuited. There is Note that even when the common layer is provided in an island shape and the common electrode is formed in common for each color, the common electrode may cause a short circuit.
  • the display device of one embodiment of the present invention includes an insulating layer covering at least side surfaces of the island-shaped light-emitting layer and the active layer.
  • the insulating layer preferably covers part of the upper surface of each of the island-shaped light-emitting layer and the active layer.
  • the end portion of the insulating layer preferably has a tapered shape with a taper angle of less than 90° in a cross-sectional view. This can prevent disconnection of the common layer and the common electrode provided on the insulating layer. Therefore, it is possible to suppress poor connection due to disconnection. In addition, it is possible to suppress an increase in electrical resistance due to local thinning of the common electrode due to a step.
  • discontinuity refers to a phenomenon in which a layer, film, or electrode is divided due to the shape of a formation surface (for example, a step).
  • the island-shaped light-emitting layer and active layer manufactured by the method for manufacturing a display device of one embodiment of the present invention are formed by processing a film that is formed over one surface. Therefore, it is possible to realize a high-definition display device or a display device with a high aperture ratio, which has hitherto been difficult to achieve. Furthermore, since the light-emitting layer of the light-emitting device can be separately formed for each color, a display device with extremely vivid, high contrast and luminance, and high display quality can be realized. Moreover, the light receiving device can capture a high-definition image.
  • the display device of one embodiment of the present invention has convex lens structures over the light receiving device and the light emitting device.
  • the structure on the light-receiving device and the light-emitting device By providing the structure on the light-receiving device and the light-emitting device, the light-receiving sensitivity of the light-receiving device and the efficiency of extracting light emitted from the light-emitting device to the outside can be enhanced.
  • the width of the structure provided on the light-receiving device By making the width of the structure provided on the light-receiving device larger than the width of the light-receiving part, the light condensing ability can be enhanced, and the photosensitivity of the light-receiving device can be improved.
  • the convex lens-shaped structure preferably has a substantially trapezoidal cross section.
  • the width and thickness of the lens are proportional to each other, so it may not be arranged depending on the pixel size.
  • part of the light reflected inside the structure tends to have a large incident angle. Therefore, the light is likely to be totally reflected and may not enter the light receiving device efficiently.
  • a structure having a substantially trapezoidal cross section has a lens shape near the ends and a flat plate shape near the center. Therefore, the light entering near the edge of the opening can be refracted to enter the light receiving device. In addition, since the light reflected inside the structure has a relatively small incident angle, it is difficult to undergo total reflection and can effectively enter the light receiving device. Therefore, the photosensitivity of the light receiving device can be improved.
  • part of the light emitted by the light emitting device may be blocked near the edge of the opening and not extracted to the outside.
  • the light can be refracted and extracted to the outside. Therefore, the light extraction efficiency can be improved.
  • the convex lens-like structure can be provided on both the light receiving device and the light emitting device, but may be provided on either the light receiving device or the light emitting device.
  • the convex lens-shaped structure having a substantially trapezoidal cross section may be simply referred to as a lens, a trapezoidal lens, or a microlens.
  • a microlens array MLA
  • FIG. 1A shows a top view of a display device 100 with light-emitting and light-receiving devices.
  • the display device 100 has a display section in which a plurality of pixels 110 are arranged.
  • FIG. 1A shows some sub-pixels, and shows an example in which a pixel 110 is composed of a plurality of equally-spaced sub-pixels (sub-pixels 110a, 110b, 110c, and 110d).
  • the row direction is sometimes called the X direction
  • the column direction is sometimes called the Y direction.
  • the X and Y directions intersect and intersect perpendicularly or nearly perpendicularly (see FIG. 1A).
  • the top surface shape of the sub-pixel shown in FIG. 1A corresponds to the top surface shape of the light emitting region or the light receiving region.
  • the top surface shape of the sub-pixel may be a triangle, a quadrangle (including a rectangle and a square), a polygon such as a pentagon, a polygon with rounded corners, an ellipse, or a circle.
  • the layout of the circuits included in the sub-pixels is not limited to the range of the sub-pixels shown in FIG. 1A, and may be arranged outside the sub-pixels.
  • the transistors included in sub-pixel 110a may be located within sub-pixel 110b, or some or all may be located outside sub-pixel 110a.
  • the aperture ratios of the sub-pixels 110a, 110b, 110c, and 110d can be determined as appropriate.
  • the aperture ratios of the sub-pixels 110a, 110b, 110c, and 110d may be different, and two or more may be equal or substantially equal.
  • a display device of one embodiment of the present invention includes a light-receiving device in a pixel.
  • a light-receiving device in a pixel.
  • three may have light-emitting devices and one may have a light-receiving device.
  • the three sub-pixels can each have light emitting devices that emit different colors of light. For example, red (R), green (G), and blue (B) sub-pixels, and yellow (Y), cyan (C), and magenta (M) sub-pixels can be used.
  • the sub-pixels 110a, 110b, and 110c each have a light-emitting device and the sub-pixel 110d has a light-receiving device 150 will be described.
  • the light emitting device 130c included in the sub-pixel 110c will be described as an element constituting the light emitting device, common elements can also be applied to the light emitting devices included in the sub-pixels 110a and 110b.
  • FIG. 1B shows a cross-sectional view along the dashed-dotted line X1-X2 in FIG. 1A.
  • an insulating layer is provided on the layer 101 containing the transistor, and a light emitting device 130c and a light receiving device 150 are provided on the insulating layer.
  • a protective layer 131 is provided to cover the light emitting device 130 c and the light receiving device 150 .
  • a lens 133 provided on a substrate 120 and a light shielding layer 135 are bonded onto the protective layer 131 via an adhesive layer 122 .
  • the lens 133 is provided for each sub-pixel and has a region that overlaps with the light emitting device 130 c or the light receiving device 150 .
  • a light shielding layer 135 is provided between adjacent lenses 133 .
  • FIG. 1B shows an example in which the light Lem emitted by the light emitting device 130c is emitted to the substrate 120 side via the lens 133, and the light Lin entering from the substrate 120 side is incident on the light receiving device 150 via the lens 133.
  • FIG. 1B shows an example in which the light Lem emitted by the light emitting device 130c is emitted to the substrate 120 side via the lens 133, and the light Lin entering from the substrate 120 side is incident on the light receiving device 150 via the lens 133.
  • An insulating layer 125 and an insulating layer 127 on the insulating layer 125 are provided in a region between the adjacent light emitting device and the light receiving device 150 .
  • insulating layers 125 and 127 are also provided in regions between adjacent light emitting devices.
  • a display device of one embodiment of the present invention is a top emission type in which light is emitted in a direction opposite to a substrate over which a light-emitting device is formed.
  • a layered structure including a plurality of transistors provided over a substrate and an insulating layer covering the transistors can be applied to the layer 101 including transistors.
  • the insulating layer over the transistor may have a single-layer structure or a stacked-layer structure.
  • FIG. 1B shows an insulating layer 255a, an insulating layer 255b over the insulating layer 255a, and an insulating layer 255c over the insulating layer 255b.
  • various inorganic insulating films such as an oxide insulating film, a nitride insulating film, an oxynitride insulating film, and a nitride oxide insulating film can be preferably used.
  • an oxide insulating film or an oxynitride insulating film such as a silicon oxide film, a silicon oxynitride film, or an aluminum oxide film is preferably used.
  • a nitride insulating film or a nitride oxide insulating film such as a silicon nitride film or a silicon nitride oxide film is preferably used. More specifically, a silicon oxide film is preferably used for the insulating layers 255a and 255c, and a silicon nitride film is preferably used for the insulating layer 255b.
  • the insulating layer 255b preferably functions as an etching protection film.
  • oxynitride refers to a material whose composition contains more oxygen than nitrogen
  • nitride oxide refers to a material whose composition contains more nitrogen than oxygen. point to the material.
  • silicon oxynitride refers to a material whose composition contains more oxygen than nitrogen
  • silicon nitride oxide refers to a material whose composition contains more nitrogen than oxygen. indicates
  • the emission color of the light emitting device can be infrared, red, green, blue, cyan, magenta, yellow, white, or the like.
  • color purity can be enhanced by providing a light-emitting device with a microcavity structure.
  • the light-emitting device 130c can emit light of one of three colors, red (R), green (G), and blue (B), for example.
  • the light emitting device it is preferable to use an OLED (Organic Light Emitting Diode) or a QLED (Quantum-dot Light Emitting Diode).
  • OLED Organic Light Emitting Diode
  • QLED Quadantum-dot Light Emitting Diode
  • the light-emitting substance included in the light-emitting device include a substance that emits fluorescence (fluorescent material), a substance that emits phosphorescence (phosphorescent material), and a substance that exhibits thermally activated delayed fluorescence (thermally activated delayed fluorescence: TADF) material. ) and inorganic compounds (such as quantum dot materials).
  • one electrode functions as a cathode and the other electrode functions as an anode.
  • the case where the pixel electrode functions as an anode and the common electrode functions as a cathode may be taken as an example.
  • the light emitting device 130c has a pixel electrode 111c on the insulating layer 255c, an island-shaped layer 113c on the pixel electrode 111c, a common layer 114 on the layer 113c, and a common electrode 115 on the common layer 114c.
  • layer 113c and common layer 114 can be collectively referred to as EL layers.
  • a single structure (structure having only one light emitting unit) or a tandem structure (structure having a plurality of light emitting units) may be applied to the light emitting device of this embodiment.
  • the light-emitting unit has at least one light-emitting layer.
  • layer 113c can have a light-emitting layer that emits red, green, or blue light.
  • the layer 113c can have a plurality of light-emitting units that emit red, green, or blue light. Moreover, in order to emit white light, a tandem structure in which light emitting units emitting different colors are combined can be employed.
  • Layer 113c may have one or more of a hole injection layer, a hole transport layer, a hole blocking layer, a charge generation layer, an electron blocking layer, an electron transport layer, and an electron injection layer.
  • Layer 113c can have, for example, a hole-injection layer, a hole-transport layer, a light-emitting layer, and an electron-transport layer, in that order. Moreover, you may have an electron block layer between a hole transport layer and a light emitting layer. Further, a hole blocking layer may be provided between the electron transport layer and the light emitting layer. Moreover, you may have an electron injection layer on the electron transport layer.
  • layer 113c can have an electron injection layer, an electron transport layer, an emissive layer, and a hole transport layer, in that order.
  • a hole blocking layer may be provided between the electron transport layer and the light emitting layer.
  • you may have an electron block layer between a hole transport layer and a light emitting layer.
  • a hole injection layer may be provided on the hole transport layer.
  • a light-emitting device with a tandem structure may have two or more light-emitting units in the layer 113c, and each light-emitting unit may include one or more light-emitting layers. Each light emitting unit may also have one or more of a hole injection layer, a hole transport layer, a hole blocking layer, an electron blocking layer, an electron transport layer, and an electron injection layer.
  • a charge-generating layer (also referred to as an intermediate layer) is preferably provided between each light-emitting unit. The charge generation layer has at least a charge generation region.
  • layer 113c can have a stacked structure of light-emitting unit 113_1, charge-generating layer 113_3, and light-emitting unit 113_2 (see the enlarged view of layer 113c in FIG. 1C). Note that in the drawings used in this embodiment mode, the charge generation layer may be indicated by a dashed line.
  • the layer 113c can have a plurality of light-emitting units that emit light of the same color.
  • both the light emitting unit 113_1 and the light emitting unit 113_2 can use the same type of light emitting unit that emits red, green, or blue light.
  • a tandem structure in which light emitting units emitting different colors are combined can be employed.
  • the light emitted from a plurality of light emitting units may be combined to obtain white light emission.
  • one of the light emitting unit 113_1 and the light emitting unit 113_2 may be a blue light emitting unit, and the other may be a yellow light emitting unit.
  • a light emitting unit emitting red light and a light emitting unit emitting cyan light may be combined.
  • a light emitting unit emitting green light and a light emitting unit emitting magenta light may be combined.
  • a configuration in which three light emitting units are combined may be employed.
  • a configuration may be employed in which three light emitting units, a light emitting unit emitting blue light, a light emitting unit emitting yellow or yellowish green light, and a light emitting unit emitting blue light, are combined.
  • a configuration may be employed in which three light emitting units, that is, a light emitting unit emitting blue light, a light emitting unit emitting yellow, yellow-green or green and red light, and a light emitting unit emitting blue light, are combined.
  • the number of layers of light emitting units and the order of color from the anode side, a two-stage structure of B and Y, a two-stage structure of B and light-emitting unit X, a three-stage structure of B, Y, and B, and B, X, and B.
  • the order of the number of layers of the light-emitting layers and the colors in the light-emitting unit X is, from the anode side, a two-layer structure of R and Y, a two-layer structure of R and G, and a two-layer structure of G and R. structure, a three-layer structure of G, R, and G, or a three-layer structure of R, G, and R, or the like.
  • another layer may be provided between the two light-emitting layers.
  • a tandem-type light-emitting device in which light is emitted from multiple light-emitting units, requires a relatively high voltage for light emission, but requires a smaller current value to obtain the same light-emitting intensity as a single-type light-emitting device (structure with one light-emitting unit). . Therefore, in the tandem structure, the current stress per light emitting unit can be reduced, and the device life can be extended. That is, by using a tandem light-emitting device, a highly reliable display device can be formed.
  • the light-emitting unit 113_2 preferably has a light-emitting layer and a carrier-transporting layer (electron-transporting layer or hole-transporting layer) over the light-emitting layer.
  • the light emitting unit 113_2 preferably has a light emitting layer and a carrier blocking layer (a hole blocking layer or an electron blocking layer) on the light emitting layer.
  • the light emitting unit 113_2 preferably has a light emitting layer, a carrier blocking layer over the light emitting layer, and a carrier transport layer over the carrier blocking layer.
  • the light-emitting unit 113_2 Since the surface of the light-emitting unit 113_2 is exposed during the manufacturing process of the display device, one or both of the carrier-transporting layer and the carrier-blocking layer are provided over the light-emitting layer to prevent the light-emitting layer from being exposed on the outermost surface. , the damage to the light-emitting layer can be reduced. This can improve the reliability of the light emitting device.
  • the light-emitting unit provided in the uppermost layer preferably has a light-emitting layer and one or both of a carrier transport layer and a carrier block layer over the light-emitting layer.
  • tandem light emitting device The configuration and materials of the tandem light emitting device are detailed in other embodiments.
  • the common layer 114 can have an electron injection layer or a hole injection layer. Alternatively, the common layer 114 may have a laminate of an electron transport layer and an electron injection layer, or may have a laminate of a hole transport layer and a hole injection layer. A common layer 114 and a common electrode 115 are shared by the light emitting device of each sub-pixel.
  • layer 113c is formed to cover the edge of pixel electrode 111c.
  • a mask layer 118c is located on the layer 113c included in the light emitting device 130c. The mask layer 118c is part of the remaining mask layer provided in contact with the upper surface of the layer 113c when the layer 113c is processed.
  • one edge of mask layer 118c is aligned or nearly aligned with an edge of layer 113c, and the other edge of mask layer 118c is located on layer 113c.
  • the other end of the mask layer 118c preferably overlaps the layer 113c and the pixel electrode 111c.
  • the sides of layer 113c are covered with insulating layer 125 .
  • the insulating layer 127 overlaps with the side surface of the layer 113c with the insulating layer 125 interposed therebetween.
  • a portion of the upper surface of layer 113c is also covered with mask layer 118c. Insulating layer 125 and insulating layer 127 partially overlap with the upper surface of layer 113c via mask layer 118c. Note that the upper surface of the layer 113c is not limited to the upper surface of the flat portion overlapping the upper surface of the pixel electrode, and can include the upper surface of the inclined portion and the flat portion located outside the upper surface of the pixel electrode.
  • a portion of the top surface and side surfaces of layer 113c are covered with at least one of insulating layer 125, insulating layer 127, and mask layer 118c, so that common layer 114 (or common electrode 115) is formed from pixel electrodes 111c, 111c, and 118c. and contact with the side surface of the layer 113c. Therefore, short circuits between upper and lower layers of the light emitting device can be suppressed.
  • the insulating layer 127 is provided on the insulating layer 125 so as to fill the recess in which the insulating layer 125 is formed.
  • the insulating layer 127 can overlap with part of the top surface and side surfaces of the layer 113c with the insulating layer 125 provided therebetween.
  • the insulating layer 127 preferably covers at least part of the side surfaces of the insulating layer 125 .
  • the space between the adjacent island-shaped layers can be filled; can reduce the extreme unevenness of the surface and make it more flat. Therefore, coverage of the carrier injection layer, the common electrode, and the like can be improved.
  • Common layer 114 and common electrode 115 are provided on layer 113 c , mask layer 118 c , insulating layer 125 and insulating layer 127 . Before the insulating layer 125 and the insulating layer 127 are provided, a region where the pixel electrode and the island-shaped EL layer are provided, a region where the pixel electrode and the island-shaped EL layer are not provided (region between the light emitting devices), There is a step due to
  • the step can be planarized, and coverage with the common layer 114 and the common electrode 115 can be improved. Therefore, it is possible to suppress poor connection due to disconnection. In addition, it is possible to prevent the common electrode 115 from being locally thinned due to the steps and increasing the electrical resistance.
  • the top surface of the insulating layer 127 preferably has a highly flat shape, but may have a convex portion, a convex curved surface, a concave curved surface, or a concave portion.
  • FIG. 1B shows an example in which the upper surface of the insulating layer 127 has a flat portion, but as shown in FIG. 2A, the entire upper surface of the insulating layer 127 may have a convex curved surface. Alternatively, as shown in FIG. 2B, the upper surface of the insulating layer 127 may have a concave surface.
  • the upper surface of insulating layer 127 has a shape that gently bulges from the ends toward the center, that is, a convex surface, and has a shape that is depressed at and near the center, that is, a concave surface. Also, in FIG.
  • the convex curved surface portion of the upper surface of the insulating layer 127 has a shape that is smoothly connected to the tapered portion at the end portion. Even if the insulating layer 127 has such a shape, the common layer 114 and the common electrode 115 can be formed on the entire insulating layer 127 with good coverage.
  • the stress of the insulating layer 127 can be relieved by providing the insulating layer 127 with a concave curved surface in the central portion. More specifically, the insulating layer 127 has a concave curved surface at its central portion, thereby relieving local stress generated at the end portion of the insulating layer 127 and reducing the stress between the layer 113c and the mask layer 118c. Any one or more of film peeling, film peeling between the mask layer 118c and the insulating layer 125, and film peeling between the insulating layer 125 and the insulating layer 127 can be suppressed.
  • the common layer 114 and the common electrode 115 can be formed with high coverage. In addition, it is possible to prevent the formation of portions divided by the common layer 114 and the common electrode 115 and portions where the film thickness is locally thin.
  • the display quality of the display device according to one embodiment of the present invention can be improved.
  • Insulating layer 125 can be an insulating layer comprising an inorganic material.
  • an inorganic insulating film such as an oxide insulating film, a nitride insulating film, an oxynitride insulating film, or a nitride oxide insulating film can be used.
  • the insulating layer 125 may have a single-layer structure or a laminated structure.
  • the oxide insulating film includes a silicon oxide film, an aluminum oxide film, a magnesium oxide film, an indium gallium zinc oxide film, a gallium oxide film, a germanium oxide film, an yttrium oxide film, a zirconium oxide film, a lanthanum oxide film, a neodymium oxide film, and an oxide film.
  • a hafnium film, a tantalum oxide film, and the like are included.
  • the nitride insulating film include a silicon nitride film and an aluminum nitride film.
  • Examples of the oxynitride insulating film include a silicon oxynitride film, an aluminum oxynitride film, and the like.
  • nitride oxide insulating film examples include a silicon nitride oxide film, an aluminum nitride oxide film, and the like.
  • aluminum oxide is preferable because it has a high etching selectivity with respect to the EL layer and has a function of protecting the EL layer during formation of the insulating layer 127 described later.
  • an inorganic insulating film such as an aluminum oxide film, a hafnium oxide film, or a silicon oxide film formed by an atomic layer deposition (ALD) method to the insulating layer 125
  • ALD atomic layer deposition
  • An insulating layer 125 having an excellent protective function can be formed.
  • the insulating layer 125 may have a layered structure of a film formed by an ALD method and a film formed by a sputtering method.
  • the insulating layer 125 may have a laminated structure of, for example, an aluminum oxide film formed by ALD and a silicon nitride film formed by sputtering.
  • the insulating layer 125 preferably functions as a barrier insulating layer against at least one of water and oxygen. Insulating layer 125 preferably has a function of suppressing diffusion of at least one of water and oxygen. Further, the insulating layer 125 preferably has a function of capturing or fixing at least one of water and oxygen (also referred to as gettering).
  • a barrier insulating layer means an insulating layer having a barrier property.
  • barrier property refers to a function of suppressing diffusion of a corresponding substance (also referred to as low permeability).
  • the corresponding substance has a function of capturing or fixing (also called gettering).
  • the insulating layer 125 has a function as a barrier insulating layer or a gettering function, thereby suppressing entry of impurities (typically, at least one of water and oxygen) that can diffuse into each light-emitting device from the outside. is possible. With such a structure, a highly reliable light-emitting device and a highly reliable display device can be provided.
  • impurities typically, at least one of water and oxygen
  • the same material can be used for the insulating layer 125 and the mask layer 118c.
  • the boundary between the mask layer 118c and the insulating layer 125 becomes unclear, and the mask layer 118c and the insulating layer 125 may be recognized as one layer.
  • the insulating layer 127 provided on the insulating layer 125 has a function of planarizing extreme irregularities of the insulating layer 125 formed between adjacent light emitting devices.
  • an insulating layer containing an organic material can be preferably used.
  • the organic material it is preferable to use a photosensitive organic resin, and for example, a photosensitive resin composition containing an acrylic resin is used.
  • acrylic resin does not only refer to polymethacrylate esters or methacrylic resins, but may refer to all acrylic polymers in a broad sense.
  • an acrylic resin, a polyimide resin, an epoxy resin, an imide resin, a polyamide resin, a polyimideamide resin, a silicone resin, a siloxane resin, a benzocyclobutene-based resin, a phenolic resin, precursors of these resins, or the like is used.
  • an organic material such as polyvinyl alcohol (PVA), polyvinyl butyral, polyvinylpyrrolidone, polyethylene glycol, polyglycerin, pullulan, water-soluble cellulose, or alcohol-soluble polyamide resin may be used as the insulating layer 127 .
  • a photoresist may be used as the photosensitive resin.
  • the photosensitive organic resin either a positive material or a negative material may be used.
  • a material that absorbs visible light may be used for the insulating layer 127 . Since the insulating layer 127 absorbs light emitted from the light emitting device, leakage of light (stray light) from the light emitting device to the adjacent light emitting device or light receiving device via the insulating layer 127 can be suppressed. Thereby, the display quality and imaging performance of the display device can be improved. In addition, since the display quality can be improved without using a polarizing plate for the display device, the weight and thickness of the display device can be reduced.
  • Materials that absorb visible light include materials containing pigments such as black, materials containing dyes, light-absorbing resin materials (e.g., polyimide), and resin materials that can be used for color filters (color filter materials). is mentioned.
  • resin material obtained by laminating or mixing color filter materials of two colors or three or more colors, because the effect of shielding visible light can be enhanced.
  • color filter materials it is possible to obtain a black or nearly black resin layer.
  • the light receiving device 150 will be described. Description of elements common to the light emitting device 130c and elements having a common purpose will be omitted.
  • a pn-type or pin-type photodiode can be used as the light receiving device.
  • a light-receiving device functions as a photoelectric conversion device (also referred to as a photoelectric conversion element) that detects light incident on the light-receiving device and generates an electric charge. The amount of charge generated from the light receiving device is determined based on the amount of light incident on the light receiving device.
  • the light receiving device can detect one or both of visible light and infrared light. When infrared light is detected, it is possible to detect objects even in dark places.
  • an organic photodiode having a layer containing an organic compound is preferably used.
  • Organic photodiodes can be easily made thinner, lighter, and larger, and have a high degree of freedom in shape and design, so they can be applied to various display devices.
  • an organic EL device is used as the light-emitting device and an organic photodiode is used as the light-receiving device.
  • An organic EL device and an organic photodiode can be formed on the same substrate. Therefore, an organic photodiode can be incorporated in a display device using an organic EL device.
  • the light-receiving device can be driven by applying a reverse bias between the pixel electrode and the common electrode, thereby detecting light incident on the light-receiving device, generating electric charge, and extracting it as a current.
  • a manufacturing method similar to that for the light-emitting device can also be applied to the light-receiving device.
  • the island-shaped active layer (also called photoelectric conversion layer) of the light receiving device is not formed using a fine metal mask, but is formed by forming a film that will become the active layer over the surface and then processing it. Therefore, the island-shaped active layer can be formed with a uniform thickness. Further, by providing the mask layer over the active layer, the damage to the active layer during the manufacturing process of the display device can be reduced, and the reliability of the light-receiving device can be improved.
  • the light receiving device 150 has a pixel electrode 111d on the insulating layer 255c, a layer 113d on the pixel electrode 111d, a common layer 114 on the layer 113d, and a common electrode 115 on the common layer 114.
  • layer 113d includes at least an active layer and preferably has a plurality of functional layers.
  • functional layers include carrier transport layers (hole transport layer and electron transport layer) and carrier block layers (hole block layer and electron block layer).
  • the layer 113d is a layer provided in the light receiving device 150 and not provided in the light emitting device 130c.
  • the functional layers other than the active layer contained in layer 113d may have the same material as the functional layers other than the light-emitting layer contained in layer 113c.
  • Common layer 114 is a sequence of layers shared by light receiving device 150 and light emitting device 130c.
  • a layer shared by the light-receiving device and the light-emitting device may have different functions in the light-emitting device and in the light-receiving device. Components are sometimes referred to herein based on their function in the light emitting device.
  • a hole-injecting layer functions as a hole-injecting layer in light-emitting devices and as a hole-transporting layer in light-receiving devices.
  • an electron-injecting layer functions as an electron-injecting layer in light-emitting devices and as an electron-transporting layer in light-receiving devices.
  • a layer shared by the light-receiving device and the light-emitting device may have the same function in the light-emitting device as in the light-receiving device.
  • a hole-transporting layer functions as a hole-transporting layer in both light-emitting and light-receiving devices
  • an electron-transporting layer functions as an electron-transporting layer in both light-emitting and light-receiving devices.
  • mask layer 118c Between layer 113c and insulating layer 125 is mask layer 118c, and between layer 113d and insulating layer 125 is mask layer 118d.
  • the mask layer 118c is part of the mask layer provided on the layer 113c when the layer 113c is processed.
  • the mask layer 118d is part of the remaining mask layer provided in contact with the upper surface of the layer 113d when the layer 113d including the active layer is processed.
  • Mask layer 118c and mask layer 118d may have the same material or may have different materials.
  • the sub-pixel 110d may have a higher aperture ratio than at least one of the sub-pixels 110a, 110b, and 110c.
  • a wide light receiving area of the sub-pixel 110d may make it easier to detect an object.
  • the aperture ratio of the sub-pixel 110d may be higher than the aperture ratios of the other sub-pixels depending on the definition of the display device, the circuit configuration of the sub-pixels, and the like.
  • the sub-pixel 110d may have a lower aperture ratio than at least one of the sub-pixels 110a, 110b, and 110c. By lowering the aperture ratio of the sub-pixel 110d, the pinhole effect can be enhanced and a clearer image can be obtained.
  • the sub-pixel 110d preferably changes the detection wavelength, definition, and aperture ratio depending on the application.
  • the protective layer 131 provided on the light-emitting device 130c and the light-receiving device 150 may have a single-layer structure or a laminated structure of two or more layers. By providing the protective layer 131, the reliability of the light emitting device 130c and the light receiving device 150 can be improved.
  • the conductivity of the protective layer 131 does not matter. At least one of an insulating film, a semiconductor film, and a conductive film can be used as the protective layer 131 .
  • the protective layer 131 has an inorganic film, deterioration of the light-emitting device and the light-receiving device can be prevented by preventing oxidation of the common electrode 115, suppressing impurities (such as moisture and oxygen) from entering the light-emitting device and the light-receiving device, and the like. can be suppressed, and the reliability of the display device can be improved.
  • an inorganic insulating film such as an oxide insulating film, a nitride insulating film, an oxynitride insulating film, or a nitride oxide insulating film can be used. Specific examples of these inorganic insulating films are as described for the insulating layer 125 .
  • the protective layer 131 preferably includes a nitride insulating film or a nitride oxide insulating film, and more preferably includes a nitride insulating film.
  • the protective layer 131 includes In—Sn oxide (also referred to as ITO), In—Zn oxide, Ga—Zn oxide, Al—Zn oxide, or indium gallium zinc oxide (In—Ga—Zn oxide).
  • ITO In—Sn oxide
  • In—Zn oxide Ga—Zn oxide
  • Al—Zn oxide Al—Zn oxide
  • indium gallium zinc oxide In—Ga—Zn oxide
  • An inorganic film containing a material such as IGZO can also be used.
  • the inorganic film preferably has a high resistance, and specifically, preferably has a higher resistance than the common electrode 115 .
  • the inorganic film may further contain nitrogen.
  • the protective layer 131 preferably has high transparency to visible light.
  • ITO, IGZO, and aluminum oxide are each preferred because they are inorganic materials that are highly transparent to visible light.
  • the protective layer 131 for example, a stacked structure of an aluminum oxide film and a silicon nitride film over the aluminum oxide film, or a stacked structure of an aluminum oxide film and an IGZO film over the aluminum oxide film, or the like can be used. can be done. By using the stacked-layer structure, impurities (such as water and oxygen) entering the EL layer can be suppressed.
  • the protective layer 131 may have an organic film.
  • the protective layer 131 may have both an organic film and an inorganic film.
  • an organic material that can be used for the protective layer 131 an organic insulating material that can be used for the insulating layer 127, or the like can be given.
  • the protective layer 131 may have a two-layer structure formed using different film formation methods. Specifically, the first layer of the protective layer 131 may be formed using the ALD method, and the second layer of the protective layer 131 may be formed using the sputtering method.
  • a lens 133 provided on a substrate 120 and a light shielding layer 135 are bonded onto the protective layer 131 via an adhesive layer 122 .
  • the lens 133 is provided for each sub-pixel, and the light emitting device 130 c and the light receiving device 150 each have a region overlapping the lens 133 .
  • a light shielding layer 135 is provided between adjacent lenses 133 .
  • the light shielding layer 135 has a region overlapping with the insulating layer 127 .
  • Lens 133 can be made of the same material as insulating layer 127 .
  • the light blocking layer 135 can be formed of a metal material, a resin material containing a material that absorbs visible light, or the like.
  • the width (L2) of the lens 133 provided on the light receiving device 150 is larger than the width (L1) of the light receiving portion of the light receiving device 150 .
  • the light receiving portion is a region where the layer 113d and the common layer 114 are in contact with each other. When the common layer 114 is not provided, the region where the layer 113d and the common electrode 115 are in contact is used.
  • the width of the lens and the light-receiving part refers to the diameter of the inscribed circle, the diameter of the circumscribed circle, the diameter of the circumscribed circle, the length of the opposite sides, or the length of the diagonal (the corners are rounded).
  • the definition of the width is the same for pinholes (openings), which will be described later.
  • a specific example of the width of the lens will be described later with reference to FIGS. 5A, 6A, and 6B.
  • the lens provided on the light receiving device 150 will be described with reference to cross-sectional views of FIGS. 3A to 5B. Note that the lens and the light receiving device 150 are spaced apart so that their centers overlap each other.
  • a lens is generally considered as the element, but it is difficult to secure a sufficient area for providing the lens between the surface of the substrate 120 and the light receiving device. Therefore, it is difficult to provide a lens for concentrating light rays and forming an image.
  • the pinhole is formed by providing an opening in the light shielding layer 135 .
  • the pinhole is for reducing the amount of light, but it causes a decrease in photosensitivity due to insufficient light.
  • FIG. 3A is a comparative example in which no lens is provided, and is a diagram simply showing light rays incident on the light receiving device. Note that minute reflections at boundaries between layers are not shown.
  • the light shielding layer 135 Most of the light that obliquely irradiates the substrate 120 is blocked by the light shielding layer 135 . Therefore, most of the light incident on the light-receiving device 150 is light that travels straight or nearly straight. However, if the width of the pinhole (aperture) is larger than the width of the light receiving section, part of the light may not enter the light receiving section as indicated by the rays A and B in FIG. 3A.
  • a lens 136 in the pinhole (aperture) it is preferable to provide a lens 136 in the pinhole (aperture) to refract the light rays A and B so as to enter the light receiving section.
  • a hemispherical or nearly hemispherical lens (hereinafter abbreviated as a hemispherical lens) requires a height approximately half the width of the subpixel, there is a limit to the size of the subpixel that can be applied.
  • the distance between the protective layer 131 and the substrate 120 is about several ⁇ m regardless of the size of the display device. Therefore, the width of a sub-pixel that can reasonably use a hemispherical lens is about twice the thickness of the adhesive layer 122 (10 and several ⁇ m or less) at maximum. That is, it becomes difficult to apply a hemispherical lens to a display device having larger sub-pixels.
  • the lens can be formed by applying a photosensitive resin or the like, it is also difficult to apply the photosensitive resin to a thickness of ten and several ⁇ m or more. For example, in a display device that is larger than a smartphone, the width of a sub-pixel may be ten and several ⁇ m or more even if the display device has high definition, which makes it difficult to use a hemispherical lens.
  • the substantially trapezoidal lens is a lens having a substantially trapezoidal cross-sectional shape in the thickness direction including the center of the lens or a substantially trapezoidal cross-sectional shape including the central axis (optical axis) of the lens.
  • the surface including the portions corresponding to the legs of the trapezoid has a convex curved surface, or the surface including the portions corresponding to the legs and the surface including the portion corresponding to the upper base have a convex curved surface.
  • a surface including a portion corresponding to the upper base of the trapezoid and a surface including a portion corresponding to the lower base of the trapezoid each have a flat surface. It may also have a shape in which these two faces are parallel.
  • the substantially trapezoidal lens has a substantially frustum shape and has an upper base surface, a lower base surface, and a cone surface, and the cone surface has a convex curved surface, or the convex surface extends from the cone surface to the upper base surface. It can also be said that the lens has
  • the area near the end of the lens 133 acts as a convex lens, refracts the light that is incident on the area in a straight line, and can change the direction of travel.
  • the light that enters the other area (flat portion) of the lens 133 in a straight line travels straight without changing its traveling direction.
  • the lens 133 can also refract the light rays A and B to enter the light receiving section.
  • the light that is incident on the center of the lens 133 and its vicinity can be incident on the light receiving portion by traveling straight.
  • the substantially trapezoidal lens 133 can also be said to be a kind of plano-convex lens.
  • FIG. 5A illustrates a plan view and a perspective view of lens 133 .
  • FIG. 5A shows a lens shape corresponding to the pixel array shown in FIG. 1A, which is substantially rectangular when viewed from above.
  • the width of the lens can be defined as the diameter W1 of the inscribed circle or the diameter W2 of the circumscribed circle shown in FIG. 5A.
  • the lens 133 has a convex surface region 133R near the ends and a planar region 133F at and near the center. As described above, the convex curved region 133R acts as a lens.
  • FIG. 6A is a plan view and a perspective view showing an example of a lens that is circular in top view.
  • the diameter W1 of the circle can be defined as the width of the lens.
  • FIG. 6B is a plan view and a perspective view showing an example of a lens that can be applied to the delta arrangement and has a substantially hexagonal top view.
  • the lengths (W1, W2) between opposite sides or the lengths (W3, W4) corresponding to the diagonals can be defined as the width of the lens.
  • FIG. 5A shows an example in which the light shielding layer 135 is provided around the lenses provided for all sub-pixels, but the light shielding layer 135 may be provided around only some of the sub-pixels.
  • a light shielding layer 135 can be provided only around a sub-pixel having a light receiving device (corresponding to the sub-pixel 110d in FIG. 1).
  • the configuration shown in FIG. 5B can also be applied to FIGS. 6A and 6B.
  • the region corresponding to the upper base of the trapezoid is shown as a flat surface, but it may have a slightly convex curved surface.
  • FIG. 4A shows an example in which the upper side of the lens 133 is formed to face the light receiving device, but as shown in FIG. 4B, the lower side of the lens 133 is formed to face the light receiving device. good too.
  • a planarization film 137 is formed on the protective layer 131 and a lens 133 is formed on the planarization film 137 .
  • the substrate 120 with the light shielding layer 135 formed thereon may be bonded with the adhesive layer 122 interposed therebetween.
  • FIG. 4A shows a configuration in which the light shielding layer 135 and the lens 133 do not overlap. good too.
  • a configuration may be employed in which a region in which the light shielding layer 135 overlaps the end portion of the lens 133 is provided.
  • FIG. 8A shows a typical configuration of the light receiving device and peripheral elements used in the simulation.
  • the protective layer 131 is omitted in the model of this simulation.
  • the common electrode is made up of two layers of the translucent conductive film 115a and the semi-reflective electrode 115b.
  • the thickness T of the lens is 2 ⁇ m
  • the distance from the translucent conductive film 115a to the substrate 120) was set to 10 ⁇ m.
  • the light source was installed on the upper surface of the substrate 120 (thickness: 300 ⁇ m). Table 1 shows the material, refractive index, reflectance, and absorptance of other elements used in the simulation.
  • the models used in the simulations were a configuration with a planar area in the lens 133 shown in FIG. 8A, a configuration without the lens shown in FIG. 3A, and a configuration with a hemispherical lens 136 shown in FIG.
  • the configuration shown in FIG. In FIGS. 8B to 8E the heights of the convex surfaces added to the plane regions of the lens 133 are 0.5 ⁇ m, 1 ⁇ m, 2 ⁇ m, and 3 ⁇ m, respectively.
  • the ratios of the width of the reference plane region to the height of the convex curved surface (hereinafter referred to as aspect ratio) are 5%, 10%, 20% and 30%, respectively.
  • FIG. 9 shows the simulation result of the amount of light received in the light receiving section using these models, and shows the amount of light received as a relative value with 1 for no lens.
  • Lighting SimulatorCAD manufactured by Best Media was used as simulation software.
  • the amount of light received by the light emitting device using the substantially trapezoidal lens 133 is the largest. It should be noted that the amount of light received by a substantially trapezoidal lens having a planar portion (FIG. 5A) and a configuration with an aspect ratio of 5% to 20% (FIGS. 8B to 8D) are almost the same. , the amount of received light tends to decrease when the aspect ratio exceeds 30%.
  • the interface between the lens 136 and the adhesive layer 122 is mostly flat. Therefore, most of the light incident on the lens 133 does not increase the incident angle ⁇ 2 with respect to the interface. Therefore, the light travels toward the light receiving section without undergoing total reflection.
  • lenses having aspect ratios of 5% to 20% are also considered to be less likely to increase the incident angle ⁇ 2.
  • the amount of light received by the light receiving portion is greater when the substantially trapezoidal lens 133 is used than when the hemispherical lens 136 is used. Also, it can be said that it is effective to use a substantially trapezoidal lens regardless of the size of the sub-pixel. In addition, even lenses with an aspect ratio of up to 20% can receive an excellent amount of light. It can be said that there is an excellent effect.
  • the substantially trapezoidal lens 133 is provided on the light-emitting device 130c, which also has the effect of increasing the light extraction efficiency. Note that the lens 133 and the light emitting device 130c are spaced apart so that their centers overlap each other.
  • the width of the lens 133 provided on the light emitting device 130c is larger than the width of the light emitting portion of the light emitting device 130c.
  • the light emitting portion is a region where the layer 113c and the common layer 114 are in contact with each other. When the common layer 114 is not provided, the region where the layer 113c and the common electrode 115 are in contact is used.
  • the width of the lens is the same as the width of the lens shown in FIGS. 5A, 6A, and 6B.
  • FIG. 11A and 11B are diagrams illustrating part of the light beam emitted by the light emitting device 130c.
  • FIG. 11A is a comparative example without a lens
  • FIG. 11B is an example with a lens 133 .
  • the substantially trapezoidal lens 133 provided on the light emitting device 130c can have the same configuration as the substantially trapezoidal lens 133 provided on the light receiving device 150 described above.
  • the light shielding layer 135 When the light shielding layer 135 is provided, part of the light emitted obliquely from the light emitting device 130c is blocked by the light shielding layer 135 and cannot be emitted to the outside.
  • the lens 133 when the lens 133 is provided, even light that is blocked in FIG. Therefore, by providing the substantially trapezoidal lens 133, the light extraction efficiency can be enhanced. That is, a high-luminance display device can be formed.
  • optical members can be arranged outside the substrate 120 .
  • optical members include polarizing plates, retardation plates, light diffusion layers (diffusion films, etc.), antireflection layers, and light-condensing films.
  • an antistatic film that suppresses adhesion of dust a water-repellent film that prevents adhesion of dirt, a hard coat film that suppresses the occurrence of scratches due to use, a shock absorption layer, etc. Layers may be arranged.
  • the surface protective layer By providing a glass layer or a silica layer (SiO x layer) as the surface protective layer, surface contamination and scratching can be suppressed, which is preferable.
  • the surface protective layer DLC (diamond-like carbon), aluminum oxide (AlO x ), polyester-based material, polycarbonate-based material, or the like may be used.
  • a material having a high visible light transmittance is preferably used for the surface protective layer.
  • Glass, quartz, ceramics, sapphire, resin, metal, alloy, semiconductor, or the like can be used for the substrate 120 .
  • a material that transmits the light is used for the substrate on the side from which the light from the light-emitting device is extracted.
  • Using a flexible material for the substrate 120 can increase the flexibility of the display device.
  • a polarizing plate may be used as the substrate 120 .
  • polyester resins such as polyethylene terephthalate (PET) and polyethylene naphthalate (PEN), polyacrylonitrile resins, acrylic resins, polyimide resins, polymethyl methacrylate resins, polycarbonate (PC) resins, and polyethersulfone (PES) resins.
  • polyamide resin nylon, aramid, etc.
  • polysiloxane resin cycloolefin resin
  • polystyrene resin polyamideimide resin
  • polyurethane resin polyvinyl chloride resin
  • polyvinylidene chloride resin polypropylene resin
  • PTFE polytetrafluoroethylene
  • ABS resin cellulose nanofiber, etc.
  • glass having a thickness that is flexible may be used.
  • a substrate having high optical isotropy is preferably used as the substrate of the display device.
  • a substrate with high optical isotropy has small birefringence (it can be said that the amount of birefringence is small).
  • the absolute value of the retardation (retardation) value of the substrate with high optical isotropy is preferably 30 nm or less, more preferably 20 nm or less, and even more preferably 10 nm or less.
  • Films with high optical isotropy include triacetyl cellulose (TAC, also called cellulose triacetate) films, cycloolefin polymer (COP) films, cycloolefin copolymer (COC) films, acrylic films, and the like.
  • TAC triacetyl cellulose
  • COP cycloolefin polymer
  • COC cycloolefin copolymer
  • the film when a film is used as the substrate, the film may absorb water, which may cause shape change such as wrinkles in the display device. Therefore, it is preferable to use a film having a low water absorption rate as the substrate. For example, it is preferable to use a film with a water absorption of 1% or less, more preferably 0.1% or less, and even more preferably 0.01% or less.
  • various curable adhesives such as photocurable adhesives such as ultraviolet curable adhesives, reaction curable adhesives, thermosetting adhesives, and anaerobic adhesives can be used.
  • These adhesives include epoxy resins, acrylic resins, silicone resins, phenol resins, polyimide resins, imide resins, PVC (polyvinyl chloride) resins, PVB (polyvinyl butyral) resins, EVA (ethylene vinyl acetate) resins, and the like.
  • a material with low moisture permeability such as epoxy resin is preferable.
  • a two-liquid mixed type resin may be used.
  • an adhesive sheet or the like may be used.
  • an island-shaped EL layer is provided for each light-emitting device, so that leakage current between subpixels can be suppressed. Thereby, crosstalk due to unintended light emission can be prevented, and a display device with extremely high contrast can be realized.
  • an insulating layer having a tapered end portion between adjacent island-shaped EL layers it is possible to suppress the occurrence of discontinuity during formation of the common electrode. As a result, it is possible to suppress connection failure caused by the divided portions in the common layer and the common electrode. Therefore, the display device of one embodiment of the present invention can achieve both high definition and high display quality.
  • a substantially trapezoidal lens is provided over the light-receiving device and the light-emitting device included in the display device of one embodiment of the present invention.
  • the light-receiving device can efficiently receive the light incident on the pinhole (opening) at the light-receiving part, and the light-receiving sensitivity can be improved.
  • the light emitted toward the end of the light-shielding layer can be refracted by the lens and emitted to the outside, and the light extraction efficiency can be improved.
  • Embodiment 2 In this embodiment, a method for manufacturing a lens included in a display device of one embodiment of the present invention will be described. Note that Embodiment 1 can be referred to for the description of the constituent materials of each element.
  • FIG. 12A to 12F are diagrams for explaining the manufacturing process of the lens 133 formed over the substrate 120.
  • the light shielding layer 135 is formed on the substrate 120 (see FIG. 12A).
  • a light-shielding metal film having a thickness is formed over the substrate 120, and a resist mask is formed over the metal film by a photolithography process.
  • the light shielding layer 135 having a desired shape can be formed.
  • the light shielding layer 135 may be formed by applying a photosensitive resin, partially exposing the photosensitive resin, and performing a developing process.
  • a resin layer 133a is formed by applying a photosensitive resin onto the substrate 120 and the light shielding layer 135 and performing prebaking (see FIG. 12B).
  • a photosensitive resin for example, the material for forming the insulating layer 127 described in Embodiment 1 can be used.
  • a negative photosensitive resin may be used.
  • a photomask 145 is used to shield the region where the lens 133 is to be formed, and the resin layer 133a is exposed (see FIG. 12C).
  • a photomask is used for shielding the region where the lens 133 is not formed.
  • a developing process is performed to remove unnecessary regions of the resin layer 133a to form a resin layer 133b (see FIG. 12D).
  • the resin layer 133b since the resin layer 133b has not been exposed to light, unreacted components remain and may be colored. Since the lens 133 to be formed preferably has a high transmittance to visible light, the resin layer 133b is exposed to light to accelerate the reaction when the lens is colored.
  • a resin layer 133c with improved transmittance can be formed (see FIG. 12E). Further, by performing such exposure after the developing process, the post-baking temperature of the resin layer 133c in the subsequent process may be lowered. In addition, when the resin layer 133b is not colored, the exposure after the development process may be unnecessary.
  • post-baking is performed to reflow and harden the resin layer 133c to form the lens 133 (FIG. 12F).
  • the degree of deformation of the resin layer 133c can be varied depending on the post-baking temperature.
  • 13A to 13C are SEM photographs showing the cross-sectional shape of the lens 133 completed by changing the post-baking temperature.
  • the resin layer 133c cannot be sufficiently reflowed, and the vicinity of the end of the resin layer 133c is not deformed to have a curved surface and does not form a lens.
  • the post-baking temperature is appropriate (80° C. ⁇ 15 minutes, see FIG. 13B)
  • the resin layer 133c is deformed such that the central portion of the resin layer 133c is substantially flat and the vicinity of the end portion thereof has a curved surface.
  • a shaped lens 133 is obtained.
  • the post-baking temperature is high (100° C. ⁇ 15 minutes, see FIG. 13C)
  • the deformation of the resin layer 133c becomes excessive, resulting in a hemispherical shape instead of a trapezoidal shape. Therefore, it is preferable to post-bake at an appropriate temperature.
  • the arrangement of sub-pixels includes, for example, a stripe arrangement, an S-stripe arrangement, a matrix arrangement, a delta arrangement, a Bayer arrangement, and a pentile arrangement.
  • the top surface shape of the sub-pixel shown in the drawings in this embodiment mode corresponds to the top surface shape of the light emitting region or the light receiving region.
  • top surface shapes of sub-pixels include triangles, quadrilaterals (including rectangles and squares), polygons such as pentagons, polygons with rounded corners, ellipses, and circles.
  • circuit layout forming the sub-pixels is not limited to the range of the sub-pixels shown in the drawing, and may be arranged outside the sub-pixels.
  • a stripe arrangement is applied to the pixels 110 shown in FIGS. 14A to 14C.
  • FIG. 14A is an example in which each sub-pixel has a rectangular top surface shape
  • FIG. 14B is an example in which each sub-pixel has a top surface shape connecting two semicircles and a rectangle
  • FIG. This is an example where the sub-pixel has an elliptical top surface shape.
  • a matrix arrangement is applied to the pixels 110 shown in FIGS. 14D to 14F.
  • FIG. 14D is an example in which each sub-pixel has a square top surface shape
  • FIG. 14E is an example in which each sub-pixel has a substantially square top surface shape with rounded corners
  • FIG. which have a circular top shape.
  • FIGS. 14G and 14H show an example in which one pixel 110 is composed of 2 rows and 3 columns.
  • the pixel 110 shown in FIG. 14G has three sub-pixels (sub-pixels 110a, 110b, 110c) in the upper row (first row) and one sub-pixel ( sub-pixel 110d).
  • pixel 110 has sub-pixel 110a in the left column (first column), sub-pixel 110b in the middle column (second column), and sub-pixel 110b in the right column (third column). It has pixels 110c and sub-pixels 110d over these three columns.
  • the pixel 110 shown in FIG. 14H has three sub-pixels (sub-pixels 110a, 110b, 110c) in the upper row (first row) and three sub-pixels 110d in the lower row (second row). have In other words, pixel 110 has sub-pixels 110a and 110d in the left column (first column), sub-pixels 110b and 110d in the center column (second column), and sub-pixels 110b and 110d in the middle column (second column).
  • a column (third column) has a sub-pixel 110c and a sub-pixel 110d.
  • FIG. 14I shows an example in which one pixel 110 is composed of 3 rows and 2 columns.
  • the pixel 110 shown in FIG. 14I has sub-pixels 110a in the upper row (first row) and sub-pixels 110b in the middle row (second row). It has a sub-pixel 110c and one sub-pixel (sub-pixel 110d) in the lower row (third row).
  • the pixel 110 has sub-pixels 110a and 110b in the left column (first column), sub-pixel 110c in the right column (second column), and sub-pixels 110c and 110c in the right column (second column). It has a pixel 110d.
  • the pixel 110 shown in FIGS. 14A-14I is composed of four sub-pixels, sub-pixels 110a, 110b, 110c and 110d.
  • one of the sub-pixels 110a to 110d can be provided with a light-receiving device, and the other three can be provided with light-emitting devices.
  • the sub-pixel 110a is a sub-pixel R that emits red light
  • the sub-pixel 110b is a sub-pixel G that emits green light
  • the sub-pixel 110c is a sub-pixel that emits blue light.
  • the sub-pixel B is the sub-pixel B
  • the sub-pixel 110d is the sub-pixel S having the light-receiving device.
  • the pixel 110 shown in FIGS. 14G and 14H has a stripe arrangement of R, G, and B, so that the display quality can be improved.
  • the layout of R, G, and B is a so-called S-stripe arrangement, so the display quality can be improved.
  • the wavelength of light detected by the sub-pixel S having a light receiving device is not particularly limited.
  • the sub-pixels S can be configured to detect one or both of visible light and infrared light.
  • the sub-pixels 110a, 110b, 110c, and 110d may be sub-pixels of four colors of R, G, B, and white (W), and They can be sub-pixels, or R, G, B, infrared (IR) sub-pixels, and the like.
  • the pixel may have five types of sub-pixels.
  • FIG. 14J shows an example in which one pixel 110 is composed of 2 rows and 3 columns.
  • the pixel 110 shown in FIG. 14J has three sub-pixels (sub-pixels 110a, 110b, 110c) in the upper row (first row) and two sub-pixels ( sub-pixels 110d and 110e).
  • pixel 110 has sub-pixels 110a and 110d in the left column (first column), sub-pixel 110b in the center column (second column), and right column (third column). has sub-pixels 110c in the second and third columns, and sub-pixels 110e in the second and third columns.
  • FIG. 14K shows an example in which one pixel 110 is composed of 3 rows and 2 columns.
  • the pixel 110 shown in FIG. 14K has sub-pixels 110a in the upper row (first row) and sub-pixels 110b in the middle row (second row). It has a sub-pixel 110c and two sub-pixels (sub-pixels 110d and 110e) in the lower row (third row). In other words, pixel 110 has sub-pixels 110a, 110b, and 110d in the left column (first column) and sub-pixels 110c and 110e in the right column (second column).
  • the sub-pixel 110a is a sub-pixel R that emits red light
  • the sub-pixel 110b is a sub-pixel G that emits green light
  • the sub-pixel 110c is a sub-pixel that emits blue light.
  • the pixel 110 shown in FIG. 14J has a stripe arrangement of R, G, and B, so that the display quality can be improved.
  • the layout of R, G, and B is a so-called S-stripe arrangement, so the display quality can be improved.
  • each pixel 110 shown in FIGS. 14J and 14K it is preferable to apply a sub-pixel S having a light receiving device to at least one of the sub-pixel 110d and the sub-pixel 110e.
  • the configurations of the light receiving devices may be different from each other.
  • at least a part of the wavelength regions of the light to be detected may be different.
  • one of the sub-pixel 110d and the sub-pixel 110e may have a light receiving device that mainly detects visible light, and the other may have a light receiving device that mainly detects infrared light.
  • one of the sub-pixel 110d and the sub-pixel 110e can be applied with a sub-pixel S having a light receiving device, and the other can be used as a light source. It is preferable to apply sub-pixels with light-emitting devices.
  • one of the sub-pixel 110d and the sub-pixel 110e is a sub-pixel IR that emits infrared light, and the other is a sub-pixel S that has a light receiving device that detects infrared light.
  • a pixel having sub-pixels R, G, B, IR, and S an image is displayed using the sub-pixels R, G, and B, and the sub-pixel IR is used as a light source at the sub-pixel S. Reflected infrared light can be detected.
  • various layouts can be applied to pixels each including a subpixel including a light-emitting device. Further, a structure in which a pixel includes both a light-emitting device and a light-receiving device can be applied to the display device of one embodiment of the present invention. Also in this case, various layouts can be applied.
  • the display device of this embodiment can be a high-definition display device. Therefore, the display device of the present embodiment includes, for example, the display units of information terminals (wearable devices) such as wristwatch-type and bracelet-type devices, VR devices such as head-mounted displays (HMD), and eyeglass-type devices. It can be used for a display unit of a wearable device that can be worn on the head, such as an AR device.
  • wearable devices such as wristwatch-type and bracelet-type devices
  • VR devices such as head-mounted displays (HMD)
  • eyeglass-type devices eyeglass-type devices. It can be used for a display unit of a wearable device that can be worn on the head, such as an AR device.
  • the display device of this embodiment can be a high-resolution display device or a large-sized display device. Therefore, the display device of the present embodiment can be used to display relatively large screens such as televisions, desktop or notebook personal computers, computer monitors, digital signage, and large game machines such as pachinko machines. It can be used for display portions of digital cameras, digital video cameras, digital photo frames, mobile phones, portable game machines, personal digital assistants, and sound reproducing devices, in addition to electronic devices.
  • Display module A perspective view of the display module 280 is shown in FIG. 15A.
  • the display module 280 has a display device 100A and an FPC 290 .
  • Display module 280 has a substrate 291 and a substrate 292 .
  • the display module 280 has a display section 281 .
  • the display unit 281 is an area for displaying an image in the display module 280, and is an area where light from each pixel provided in the pixel unit 284, which will be described later, can be visually recognized.
  • FIG. 15B shows a perspective view schematically showing the configuration on the substrate 291 side.
  • a circuit section 282 , a pixel circuit section 283 on the circuit section 282 , and a pixel section 284 on the pixel circuit section 283 are stacked on the substrate 291 .
  • a terminal portion 285 for connecting to the FPC 290 is provided on a portion of the substrate 291 that does not overlap with the pixel portion 284 .
  • the terminal portion 285 and the circuit portion 282 are electrically connected by a wiring portion 286 composed of a plurality of wirings.
  • the pixel section 284 has a plurality of periodically arranged pixels 284a.
  • An enlarged view of one pixel 284a is shown on the right side of FIG. 15B.
  • the pixel described in the above embodiment can be applied to the pixel 284a.
  • FIG. 15B shows, as an example, the case of having the same configuration as the pixel 110 shown in FIG. 1A.
  • the pixel circuit section 283 has a plurality of pixel circuits 283a arranged periodically.
  • One pixel circuit 283a is a circuit that controls driving of a plurality of elements included in one pixel 284a.
  • One pixel circuit 283a can be configured to have a circuit that controls the light emission of one light emitting device or the imaging operation of one light receiving device.
  • the circuit section 282 has a circuit that drives each pixel circuit 283 a of the pixel circuit section 283 .
  • a circuit that drives each pixel circuit 283 a of the pixel circuit section 283 For example, it is preferable to have one or both of a gate line driver circuit and a source line driver circuit.
  • at least one of an arithmetic circuit, a memory circuit, a power supply circuit, and the like may be provided.
  • the FPC 290 functions as wiring for supplying a video signal, power supply potential, or the like to the circuit section 282 from the outside. Also, an IC may be mounted on the FPC 290 .
  • the aperture ratio (effective display area ratio) of the display portion 281 is can be very high.
  • the aperture ratio of the display section 281 can be 40% or more and less than 100%, preferably 50% or more and 95% or less, more preferably 60% or more and 95% or less.
  • the wiring length between the circuit section 282 and the pixel circuit section 283 can be shortened, the effects of wiring resistance and wiring capacitance can be reduced, enabling high-speed operation with low power consumption.
  • a display module 280 has extremely high definition, it can be suitably used for a VR device such as an HMD or a glasses-type AR device. For example, even in the case of a configuration in which the display portion of the display module 280 is viewed through a lens, the display module 280 has an extremely high-definition display portion 281, so pixels cannot be viewed even if the display portion is enlarged with the lens. , a highly immersive display can be performed.
  • the display module 280 is not limited to this, and can be suitably used for electronic equipment having a relatively small display unit. For example, it can be suitably used for a display portion of a smart phone or a wristwatch type electronic device.
  • Display device 100A A display device 100A shown in FIG.
  • the substrate 301 corresponds to the substrate 291 in FIGS. 15A and 15B.
  • a stacked structure from the substrate 301 to the insulating layer 255a and below corresponds to the layer 101 including the transistor in Embodiment 1.
  • FIG. 1 A stacked structure from the substrate 301 to the insulating layer 255a and below corresponds to the layer 101 including the transistor in Embodiment 1.
  • a transistor 310 has a channel formation region in the substrate 301 .
  • the substrate 301 for example, a semiconductor substrate such as a single crystal silicon substrate can be used.
  • Transistor 310 has a portion of substrate 301 , conductive layer 311 , low resistance region 312 , insulating layer 313 and insulating layer 314 .
  • the conductive layer 311 functions as a gate electrode.
  • An insulating layer 313 is located between the substrate 301 and the conductive layer 311 and functions as a gate insulating layer.
  • the low-resistance region 312 is a region in which the substrate 301 is doped with impurities and functions as either a source or a drain.
  • the insulating layer 314 is provided to cover the side surface of the conductive layer 311 .
  • a device isolation layer 315 is provided between two adjacent transistors 310 so as to be embedded in the substrate 301 .
  • An insulating layer 261 is provided to cover the transistor 310 and a capacitor 240 is provided over the insulating layer 261 .
  • the capacitor 240 has a conductive layer 241, a conductive layer 245, and an insulating layer 243 positioned therebetween.
  • the conductive layer 241 functions as one electrode of the capacitor 240
  • the conductive layer 245 functions as the other electrode of the capacitor 240
  • the insulating layer 243 functions as the dielectric of the capacitor 240 .
  • An insulating layer 255a is provided to cover the capacitor 240, an insulating layer 255b is provided over the insulating layer 255a, and an insulating layer 255c is provided over the insulating layer 255b.
  • a light emitting device 130c and a light receiving device 150 are provided on the insulating layer 255c.
  • FIG. 16 shows an example in which the light emitting device 130c and the light receiving device 150 have the laminated structure shown in FIG. 1B.
  • the pixel electrode 111c and the pixel electrode 111d are embedded in the insulating layer 243, the insulating layer 255a, the insulating layer 255b, the plug 256 embedded in the insulating layer 255c, the conductive layer 241 embedded in the insulating layer 254, and the insulating layer 261. It is electrically connected to one of the source or drain of transistor 310 by a plug 271 .
  • the pixel electrode can have, for example, a two-layer structure of a reflective electrode and a transparent electrode on the reflective electrode.
  • the height of the upper surface of the insulating layer 255c and the height of the upper surface of the plug 256 match or substantially match.
  • Various conductive materials can be used for the plug.
  • Embodiment 1 can be referred to for details of the components from the light emitting device to the substrate 120 .
  • Substrate 120 corresponds to substrate 292 in FIG. 15A.
  • Display device 100D A display device 100D shown in FIG. 17 is mainly different from the display device 100A in that the configuration of transistors is different. In the following description of the display device, the description of the same parts as those of the previously described display device may be omitted.
  • the transistor 320 is a transistor (OS transistor) in which a metal oxide (also referred to as an oxide semiconductor) is applied to a semiconductor layer in which a channel is formed.
  • OS transistor a transistor in which a metal oxide (also referred to as an oxide semiconductor) is applied to a semiconductor layer in which a channel is formed.
  • the transistor 320 has a semiconductor layer 321 , an insulating layer 323 , a conductive layer 324 , a pair of conductive layers 325 , an insulating layer 326 , and a conductive layer 327 .
  • the substrate 331 corresponds to the substrate 291 in FIGS. 15A and 15B.
  • a stacked structure from the substrate 331 to the insulating layer 255a and below corresponds to the layer 101 including the transistor in Embodiment 1.
  • An insulating layer 332 is provided over the substrate 331 .
  • the insulating layer 332 functions as a barrier layer that prevents impurities such as water or hydrogen from diffusing from the substrate 331 into the transistor 320 and oxygen from the semiconductor layer 321 toward the insulating layer 332 side.
  • a film into which hydrogen or oxygen is less likely to diffuse than a silicon oxide film such as an aluminum oxide film, a hafnium oxide film, or a silicon nitride film, can be used.
  • a conductive layer 327 is provided over the insulating layer 332 and an insulating layer 326 is provided to cover the conductive layer 327 .
  • the conductive layer 327 functions as a first gate electrode of the transistor 320, and part of the insulating layer 326 functions as a first gate insulating layer.
  • An oxide insulating film such as a silicon oxide film is preferably used for at least a portion of the insulating layer 326 that is in contact with the semiconductor layer 321 .
  • the upper surface of the insulating layer 326 is preferably planarized.
  • the semiconductor layer 321 is provided over the insulating layer 326 .
  • the semiconductor layer 321 preferably includes a metal oxide (also referred to as an oxide semiconductor) film having semiconductor characteristics.
  • a pair of conductive layers 325 is provided on and in contact with the semiconductor layer 321 and functions as a source electrode and a drain electrode.
  • An insulating layer 328 is provided to cover the top and side surfaces of the pair of conductive layers 325 , the side surface of the semiconductor layer 321 , and the like, and the insulating layer 264 is provided over the insulating layer 328 .
  • the insulating layer 328 functions as a barrier layer that prevents impurities such as water or hydrogen from diffusing into the semiconductor layer 321 from the insulating layer 264 or the like and oxygen from leaving the semiconductor layer 321 .
  • an insulating film similar to the insulating layer 332 can be used as the insulating layer 328.
  • An opening reaching the semiconductor layer 321 is provided in the insulating layer 328 and the insulating layer 264 .
  • the insulating layer 323 and the conductive layer 324 are buried in contact with the side surfaces of the insulating layer 264 , the insulating layer 328 , and the conductive layer 325 and the top surface of the semiconductor layer 321 .
  • the conductive layer 324 functions as a second gate electrode, and the insulating layer 323 functions as a second gate insulating layer.
  • the top surface of the conductive layer 324, the top surface of the insulating layer 323, and the top surface of the insulating layer 264 are planarized so that their heights are the same or substantially the same, and an insulating layer 329 and an insulating layer 265 are provided to cover them. ing.
  • the insulating layers 264 and 265 function as interlayer insulating layers.
  • the insulating layer 329 functions as a barrier layer that prevents impurities such as water or hydrogen from diffusing into the transistor 320 from the insulating layer 265 or the like.
  • an insulating film similar to the insulating layers 328 and 332 can be used.
  • a plug 274 electrically connected to one of the pair of conductive layers 325 is provided so as to be embedded in the insulating layers 265 , 329 and 264 .
  • the plug 274 includes a conductive layer 274a covering the side surfaces of the openings of the insulating layers 265, the insulating layers 329, the insulating layers 264, and the insulating layers 328 and part of the upper surface of the conductive layer 325, and the conductive layer 274a. It is preferable to have a conductive layer 274b in contact with the top surface. At this time, a conductive material into which hydrogen and oxygen are difficult to diffuse is preferably used for the conductive layer 274a.
  • a display device 100E illustrated in FIG. 18 has a structure in which a transistor 320A and a transistor 320B each including an oxide semiconductor as a semiconductor in which a channel is formed are stacked.
  • the structure of the transistor 320A, the transistor 320B, and the periphery thereof can be referred to the display device 100D.
  • transistors each including an oxide semiconductor are stacked here, the structure is not limited to this.
  • a structure in which three or more transistors are stacked may be employed.
  • a display device 100F illustrated in FIG. 19 has a structure in which a transistor 310 in which a channel is formed over a substrate 301 and a transistor 320 including a metal oxide in a semiconductor layer in which the channel is formed are stacked.
  • An insulating layer 261 is provided to cover the transistor 310 , and a conductive layer 251 is provided over the insulating layer 261 .
  • An insulating layer 262 is provided to cover the conductive layer 251 , and the conductive layer 252 is provided over the insulating layer 262 .
  • the conductive layers 251 and 252 each function as wiring.
  • An insulating layer 263 and an insulating layer 332 are provided to cover the conductive layer 252 , and the transistor 320 is provided over the insulating layer 332 .
  • An insulating layer 265 is provided to cover the transistor 320 and a capacitor 240 is provided over the insulating layer 265 . Capacitor 240 and transistor 320 are electrically connected by plug 274 .
  • the transistor 320 can be used as a transistor forming a pixel circuit. Further, the transistor 310 can be used as a transistor forming a pixel circuit or a transistor forming a driver circuit (a gate line driver circuit or a source line driver circuit) for driving the pixel circuit. Further, the transistors 310 and 320 can be used as transistors included in various circuits such as an arithmetic circuit and a memory circuit.
  • FIG. 20 shows a perspective view of the display device 100G
  • FIG. 21A shows a cross-sectional view of the display device 100G.
  • the display device 100G has a configuration in which a substrate 152 and a substrate 151 are bonded together.
  • the substrate 152 is indicated by dashed lines.
  • the display device 100G includes a display portion 162, a connection portion 140, a circuit 164, wirings 165, and the like.
  • FIG. 20 shows an example in which an IC 173 and an FPC 172 are mounted on the display device 100G. Therefore, the configuration shown in FIG. 20 can also be said to be a display module including the display device 100G, an IC (integrated circuit), and an FPC.
  • the connecting portion 140 is provided outside the display portion 162 .
  • the connection portion 140 can be provided along one side or a plurality of sides of the display portion 162 .
  • the number of connection parts 140 may be singular or plural.
  • FIG. 20 shows an example in which connection portions 140 are provided so as to surround the four sides of the display portion.
  • the connection part 140 the common electrode of the light emitting device and the conductive layer are electrically connected, and a potential can be supplied to the common electrode.
  • a scanning line driver circuit can be used.
  • the wiring 165 has a function of supplying signals and power to the display portion 162 and the circuit 164 .
  • the signal and power are input to wiring 165 from the outside via FPC 172 or from IC 173 .
  • FIG. 20 shows an example in which the IC 173 is provided on the substrate 151 by a COG (Chip On Glass) method, a COF (Chip on Film) method, or the like.
  • a COG Chip On Glass
  • COF Chip on Film
  • the IC 173 for example, an IC having a scanning line driver circuit or a signal line driver circuit can be applied.
  • the display device 100G and the display module may be configured without an IC.
  • the IC may be mounted on the FPC by the COF method or the like.
  • part of the area including the FPC 172, part of the circuit 164, part of the display part 162, part of the connection part 140, and part of the area including the end of the display device 100G are cut off.
  • An example of a cross section is shown.
  • a display device 100G illustrated in FIG. 21A includes a transistor 201 and a transistor 205, a light emitting device 130R emitting red light, a light emitting device 130G emitting green light, a light receiving device 150, and the like, between substrates 151 and 152.
  • FIG. 21A includes a transistor 201 and a transistor 205, a light emitting device 130R emitting red light, a light emitting device 130G emitting green light, a light receiving device 150, and the like, between substrates 151 and 152.
  • the light-emitting devices 130R, 130G and the light-receiving device 150P have the same layered structure as the light-emitting device and the light-receiving device shown in FIG. 1B, respectively, except that the configuration of the pixel electrodes is different.
  • the light emitting device 130R has a conductive layer 112a, a conductive layer 126a on the conductive layer 112a, and a conductive layer 129a on the conductive layer 126a. All of the conductive layers 112a, 126a, and 129a can be called pixel electrodes, and some of them can be called pixel electrodes.
  • Light emitting device 130G has conductive layer 112b, conductive layer 126b on conductive layer 112b, and conductive layer 129b on conductive layer 126b.
  • the light receiving device 150P has a conductive layer 112d, a conductive layer 126d on the conductive layer 112d, and a conductive layer 129d on the conductive layer 126d.
  • the conductive layer 112 a is connected to the conductive layer 222 b included in the transistor 205 through an opening provided in the insulating layer 214 .
  • the end of the conductive layer 126a is located outside the end of the conductive layer 112a.
  • the end of the conductive layer 126a and the end of the conductive layer 129a are aligned or substantially aligned.
  • a conductive layer functioning as a reflective electrode can be used for the conductive layers 112a and 126a
  • a conductive layer functioning as a transparent electrode can be used for the conductive layer 129a.
  • the conductive layers 112b, 126b, and 129b in the light emitting device 130G and the conductive layers 112d, 126d, and 129d in the light receiving device 150P are the same as the conductive layers 112a, 126a, and 129a in the light emitting device 130R, so detailed description thereof will be omitted.
  • Concave portions are formed in the conductive layers 112 a , 112 b , and 112 d so as to cover the openings provided in the insulating layer 214 .
  • a layer 128 is embedded in the recess.
  • Layer 128 has the function of planarizing recesses in conductive layers 112a, 112b, 112d.
  • Conductive layers 126a, 126b, and 126d electrically connected to the conductive layers 112a, 112b, and 112d are provided over the conductive layers 112a, 112b, and 112d and the layer 128, respectively. Therefore, the regions overlapping the concave portions of the conductive layers 112a, 112b, and 112d can also be used as light emitting regions or light receiving regions, and the aperture ratio of pixels can be increased.
  • Layer 128 may be an insulating layer or a conductive layer.
  • Various inorganic insulating materials, organic insulating materials, and conductive materials can be used for layer 128 as appropriate.
  • layer 128 is preferably formed using an insulating material, and particularly preferably formed using an organic insulating material.
  • an organic insulating material that can be used for the insulating layer 127 described above can be applied.
  • a lens 133 and a protective layer 131 are provided on the light emitting devices 130R, 130G and the light receiving device 150P.
  • the protective layer 131 and the substrate 152 are adhered via the adhesive layer 122 .
  • a light shielding layer 135 is provided on the substrate 152 .
  • a solid sealing structure, a hollow sealing structure, or the like can be applied to sealing the light-emitting device.
  • the space between substrates 152 and 151 is filled with an adhesive layer 122 to apply a solid sealing structure.
  • the space may be filled with an inert gas (such as nitrogen or argon) to apply a hollow sealing structure.
  • the adhesive layer 122 may be provided so as not to overlap the light emitting device.
  • the space may be filled with a resin different from the adhesive layer 122 provided in a frame shape.
  • a conductive layer 123 is provided over the insulating layer 214 in the connection portion 140 .
  • the conductive layer 123 includes a conductive film obtained by processing the same conductive film as the conductive layers 112a, 112b, and 112d and a conductive film obtained by processing the same conductive film as the conductive layers 126a, 126b, and 126d. , and a conductive film obtained by processing the same conductive film as the conductive layers 129a, 129b, and 129d.
  • a common layer 114 is provided over the conductive layer 123 , and a common electrode 115 is provided over the common layer 114 .
  • the conductive layer 123 and the common electrode 115 are electrically connected through the common layer 114 .
  • the common layer 114 may not be formed in the connecting portion 140 . In this case, the conductive layer 123 and the common electrode 115 are directly contacted and electrically connected.
  • the display device 100G is of a top emission type. Light emitted by the light emitting device is emitted to the substrate 152 side. A material having high visible light transmittance is preferably used for the substrate 152 .
  • the pixel electrode contains a material that reflects visible light, and the counter electrode (common electrode 115) contains a material that transmits visible light.
  • the layered structure from the substrate 151 to the insulating layer 214 corresponds to the layer 101 including the transistor in Embodiment 1.
  • Both the transistor 201 and the transistor 205 are formed over the substrate 151 . These transistors can be made with the same material and the same process.
  • An insulating layer 211 , an insulating layer 213 , an insulating layer 215 , and an insulating layer 214 are provided in this order over the substrate 151 .
  • Part of the insulating layer 211 functions as a gate insulating layer of each transistor.
  • Part of the insulating layer 213 functions as a gate insulating layer of each transistor.
  • An insulating layer 215 is provided over the transistor.
  • An insulating layer 214 is provided over the transistor and functions as a planarization layer. Note that the number of gate insulating layers and the number of insulating layers covering a transistor are not limited, and each may be a single layer or two or more layers.
  • a material into which impurities such as water and hydrogen are difficult to diffuse is preferably used for at least one insulating layer covering the transistor. This allows the insulating layer to function as a barrier layer. With such a structure, diffusion of impurities from the outside into the transistor can be effectively suppressed, and the reliability of the display device can be improved.
  • Inorganic insulating films are preferably used for the insulating layers 211, 213, and 215, respectively.
  • the inorganic insulating film for example, a silicon nitride film, a silicon oxynitride film, a silicon oxide film, a silicon oxynitride film, an aluminum oxide film, an aluminum nitride film, or the like can be used.
  • a hafnium oxide film, an yttrium oxide film, a zirconium oxide film, a gallium oxide film, a tantalum oxide film, a magnesium oxide film, a lanthanum oxide film, a cerium oxide film, a neodymium oxide film, or the like may be used.
  • two or more of the insulating films described above may be laminated and used.
  • An organic insulating layer is suitable for the insulating layer 214 that functions as a planarization layer.
  • Materials that can be used for the organic insulating layer include acrylic resins, polyimide resins, epoxy resins, polyamide resins, polyimideamide resins, siloxane resins, benzocyclobutene-based resins, phenolic resins, precursors of these resins, and the like.
  • the insulating layer 214 may have a laminated structure of an organic insulating layer and an inorganic insulating layer. The outermost layer of the insulating layer 214 preferably functions as an etching protective layer.
  • a recess in the insulating layer 214 can be suppressed when the conductive layer 112a, the conductive layer 126a, or the conductive layer 129a is processed.
  • recesses may be provided in the insulating layer 214 when the conductive layers 112a, 126a, 129a, or the like are processed.
  • the transistor 201 and the transistor 205 include a conductive layer 221 functioning as a gate, an insulating layer 211 functioning as a gate insulating layer, conductive layers 222a and 222b functioning as a source and a drain, a semiconductor layer 231, and an insulating layer functioning as a gate insulating layer. It has a layer 213 and a conductive layer 223 that functions as a gate. Here, the same hatching pattern is applied to a plurality of layers obtained by processing the same conductive film.
  • the insulating layer 211 is located between the conductive layer 221 and the semiconductor layer 231 .
  • the insulating layer 213 is located between the conductive layer 223 and the semiconductor layer 231 .
  • the structure of the transistor included in the display device of this embodiment there is no particular limitation on the structure of the transistor included in the display device of this embodiment.
  • a planar transistor, a staggered transistor, an inverted staggered transistor, or the like can be used.
  • the transistor structure may be either a top-gate type or a bottom-gate type.
  • gates may be provided above and below a semiconductor layer in which a channel is formed.
  • a structure in which a semiconductor layer in which a channel is formed is sandwiched between two gates is applied to the transistors 201 and 205 .
  • a transistor may be driven by connecting two gates and applying the same signal to them.
  • the threshold voltage of the transistor may be controlled by applying a potential for controlling the threshold voltage to one of the two gates and applying a potential for driving to the other.
  • Crystallinity of a semiconductor material used for a transistor is not particularly limited, either an amorphous semiconductor or a semiconductor having crystallinity (a microcrystalline semiconductor, a polycrystalline semiconductor, a single crystal semiconductor, or a semiconductor partially including a crystal region). may be used. It is preferable to use a crystalline semiconductor because deterioration of transistor characteristics can be suppressed.
  • a semiconductor layer of a transistor preferably includes a metal oxide (also referred to as an oxide semiconductor).
  • the display device of this embodiment preferably uses a transistor including a metal oxide for a channel formation region (hereinafter referred to as an OS transistor).
  • crystalline oxide semiconductors examples include CAAC (c-axis-aligned crystalline)-OS, nc (nanocrystalline)-OS, and the like.
  • a transistor using silicon for a channel formation region may be used.
  • silicon examples include monocrystalline silicon, polycrystalline silicon, amorphous silicon, and the like.
  • a transistor including low-temperature polysilicon (LTPS) in a semiconductor layer hereinafter also referred to as an LTPS transistor
  • the LTPS transistor has high field effect mobility and good frequency characteristics.
  • a circuit that needs to be driven at a high frequency (for example, a source driver circuit) can be formed on the same substrate as the display portion. This makes it possible to simplify the external circuit mounted on the display device and reduce the component cost and the mounting cost.
  • OS transistors have much higher field-effect mobility than transistors using amorphous silicon.
  • an OS transistor has extremely low source-drain leakage current (hereinafter also referred to as an off-state current) in an off state, and can retain charge accumulated in a capacitor connected in series with the transistor for a long time. is possible. Further, by using the OS transistor, power consumption of the display device can be reduced.
  • the amount of current flowing through the light emitting device it is necessary to increase the amount of current flowing through the light emitting device.
  • the OS transistor when the transistor operates in the saturation region, the OS transistor can reduce the change in the source-drain current with respect to the change in the gate-source voltage as compared with the Si transistor. Therefore, by applying an OS transistor as a drive transistor included in a pixel circuit, the current flowing between the source and the drain can be finely determined according to the change in the voltage between the gate and the source. can be controlled. Therefore, it is possible to increase the gradation in the pixel circuit.
  • the OS transistor flows a more stable current (saturation current) than the Si transistor even when the source-drain voltage gradually increases. be able to. Therefore, by using the OS transistor as the driving transistor, a stable current can be supplied to the light-emitting device even when the current-voltage characteristics of the EL device vary, for example. That is, when the OS transistor operates in the saturation region, even if the source-drain voltage is increased, the source-drain current hardly changes, so that the light emission luminance of the light-emitting device can be stabilized.
  • an OS transistor as a driving transistor included in a pixel circuit, it is possible to suppress black floating, increase emission luminance, provide multiple gradations, and suppress variations in light emitting devices. can be planned.
  • the semiconductor layer includes, for example, indium and M (M is gallium, aluminum, silicon, boron, yttrium, tin, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, one or more selected from hafnium, tantalum, tungsten, and magnesium) and zinc.
  • M is preferably one or more selected from aluminum, gallium, yttrium, and tin.
  • an oxide containing indium (In), gallium (Ga), and zinc (Zn) (also referred to as IGZO) is preferably used for the semiconductor layer.
  • an oxide containing indium, tin, and zinc is preferably used.
  • oxides containing indium, gallium, tin, and zinc are preferably used.
  • an oxide containing indium (In), aluminum (Al), and zinc (Zn) (also referred to as IAZO) is preferably used.
  • an oxide containing indium (In), aluminum (Al), gallium (Ga), and zinc (Zn) (also referred to as IAGZO) is preferably used.
  • the In atomic ratio in the In-M-Zn oxide is preferably equal to or higher than the M atomic ratio.
  • the transistors included in the circuit 164 and the transistors included in the display portion 162 may have the same structure or different structures.
  • the plurality of transistors included in the circuit 164 may all have the same structure, or may have two or more types.
  • the structures of the plurality of transistors included in the display portion 162 may all be the same, or may be of two or more types.
  • All of the transistors in the display portion 162 may be OS transistors, all of the transistors in the display portion 162 may be Si transistors, or some of the transistors in the display portion 162 may be OS transistors and the rest may be Si transistors. good.
  • LTPS transistors and OS transistors in the display portion 162
  • a display device with low power consumption and high driving capability can be realized.
  • a structure in which an LTPS transistor and an OS transistor are combined is sometimes called an LTPO.
  • an OS transistor as a transistor or the like that functions as a switch for controlling conduction/non-conduction between wirings, and use an LTPS transistor as a transistor or the like that controls current.
  • one of the transistors included in the display portion 162 functions as a transistor for controlling current flowing through the light-emitting device and can also be called a driving transistor.
  • One of the source and drain of the drive transistor is electrically connected to the pixel electrode of the light emitting device.
  • An LTPS transistor is preferably used as the driving transistor. This makes it possible to increase the current flowing through the light emitting device in the pixel circuit.
  • the other transistor included in the display portion 162 functions as a switch for controlling selection/non-selection of pixels and can also be called a selection transistor.
  • the gate of the select transistor is electrically connected to the gate line, and one of the source and the drain is electrically connected to the source line (signal line).
  • An OS transistor is preferably used as the selection transistor.
  • the display device of one embodiment of the present invention can have high aperture ratio, high definition, high display quality, and low power consumption.
  • the display device of one embodiment of the present invention includes an OS transistor and a light-emitting device with an MML (metal maskless) structure.
  • MML metal maskless
  • leakage current that can flow through the transistor and leakage current that can flow between adjacent light-emitting devices also referred to as lateral leakage current, side leakage current, or the like
  • an observer can observe any one or more of sharpness of the image, sharpness of the image, high saturation, and high contrast ratio.
  • a layer provided between light-emitting devices (for example, an organic layer commonly used between light-emitting devices, also referred to as a common layer) is Due to the divided structure, side leaks can be eliminated or extremely reduced.
  • 21B and 21C show other configuration examples of the transistor.
  • the transistor 209 and the transistor 210 each include a conductive layer 221 functioning as a gate, an insulating layer 211 functioning as a gate insulating layer, a semiconductor layer 231 having a channel formation region 231i and a pair of low-resistance regions 231n, and one of the pair of low-resistance regions 231n.
  • a conductive layer 222a connected to a pair of low-resistance regions 231n, a conductive layer 222b connected to the other of a pair of low-resistance regions 231n, an insulating layer 225 functioning as a gate insulating layer, a conductive layer 223 functioning as a gate, and an insulating layer 215 covering the conductive layer 223 have
  • the insulating layer 211 is located between the conductive layer 221 and the channel formation region 231i.
  • the insulating layer 225 is located at least between the conductive layer 223 and the channel formation region 231i.
  • an insulating layer 218 may be provided to cover the transistor.
  • the transistor 209 shown in FIG. 21B shows an example in which the insulating layer 225 covers the top and side surfaces of the semiconductor layer 231 .
  • Conductive layers 222a and 222b are connected to low resistance region 231n through openings provided in insulating layers 225 and 215, respectively.
  • One of the conductive layers 222a and 222b functions as a source and the other functions as a drain.
  • the insulating layer 225 overlaps with the channel formation region 231i of the semiconductor layer 231 and does not overlap with the low resistance region 231n.
  • the structure shown in FIG. 21C can be manufactured by processing the insulating layer 225 using the conductive layer 223 as a mask.
  • insulating layer 215 is provided to cover insulating layer 225 and conductive layer 223, and conductive layer 222a and conductive layer 222b are connected to low resistance region 231n through openings in insulating layer 215, respectively.
  • a connection portion 204 is provided in a region of the substrate 151 where the substrate 152 does not overlap.
  • the wiring 165 is electrically connected to the FPC 172 via the conductive layer 166 and the connecting layer 242 .
  • the conductive layer 166 includes a conductive film obtained by processing the same conductive film as the conductive layers 112a, 112b, and 112d and a conductive film obtained by processing the same conductive film as the conductive layers 126a, 126b, and 126d. , and a conductive film obtained by processing the same conductive film as the conductive layers 129a, 129b, and 129d.
  • the conductive layer 166 is exposed on the upper surface of the connecting portion 204 . Thereby, the connecting portion 204 and the FPC 172 can be electrically connected via the connecting layer 242 .
  • a light shielding layer 135 is preferably provided on the surface of the substrate 152 on the substrate 151 side.
  • the light shielding layer 135 can be provided between adjacent light emitting devices, on the connection part 140, on the circuit 164, and the like. Also, various optical members can be arranged outside the substrate 152 .
  • Materials that can be used for the substrate 120 can be used for the substrates 151 and 152, respectively.
  • connection layer 242 an anisotropic conductive film (ACF), an anisotropic conductive paste (ACP), or the like can be used.
  • ACF anisotropic conductive film
  • ACP anisotropic conductive paste
  • 22A, 22B, 23A, and 23B show modifications of the display device 100G. Note that illustration of the vicinity of the transistor is omitted.
  • FIG. 22A is an example in which a color filter is provided on the light emitting device instead of the lens.
  • a red color filter 138R is provided on the light emitting device 130R that emits red light
  • a green color filter 138G is provided on the light emitting device 130G that emits green light.
  • a blue color filter is provided on the light emitting device that emits blue light.
  • a light-emitting device that emits white light may be used as shown in FIG. 22B.
  • a pixel that emits red light is provided with a light emitting device 130RW that emits white light and a red color filter 138R.
  • a pixel that emits green light is provided with a white light emitting device 130GW and a green color filter 138G.
  • a pixel that emits blue light is provided with a light-emitting device that emits white light and a blue color filter.
  • the lens and the color filter may be provided so as to overlap each other on the light emitting device.
  • the light shielding layer 135 and the lens 133 are formed on the substrate 152 and the planarizing film 139 is formed on the light shielding layer 135 and the lens 133 .
  • Color filters 138R and 138G can be formed on the planarization film 139 at positions overlapping with the lenses 133, respectively. Note that a blue color filter can also be formed in the same manner.
  • the lens 133 overlapping the light shielding layer 135, the color filters 138R and 138G and the light receiving device 150P is formed on the substrate 152, and the lens overlapping the light shielding layer 135, the color filters 138R and 138G and the light receiving device 150P.
  • a planarization film 139 is formed on 133 . Then, on the planarization film 139, the lenses 133 can be formed at respective positions overlapping with the color filters 138R and 138G.
  • a lens 133 can be similarly formed at a position overlapping the blue color filter.
  • FIGS. 23A and 23B illustrate examples using light-emitting devices that emit red light and green light, respectively, light-emitting devices that emit white light may be used.
  • FIG. 24A shows a schematic cross-sectional view of the display device 500 .
  • the display device 500 has a light-emitting device 550R that emits red light, a light-emitting device 550G that emits green light, a light-emitting device 550B that emits blue light, and a light-receiving device 560.
  • FIG. 550R that emits red light
  • a light-emitting device 550G that emits green light
  • a light-emitting device 550B that emits blue light
  • a light-receiving device 560 a light-receiving device 560.
  • the light-emitting device 550R has a structure in which two light-emitting units (light-emitting unit 512R_1 and light-emitting unit 512R_2) are stacked with a charge generation layer 531 interposed between a pair of electrodes (electrode 501 and electrode 502).
  • the light-emitting device 550G has a light-emitting unit 512G_1, a charge generation layer 531, and a light-emitting unit 512G_2 between a pair of electrodes
  • the light-emitting device 550B has a light-emitting unit 512B_1 and a charge generation layer between a pair of electrodes. It has a layer 531 and a light emitting unit 512B_2.
  • the light receiving device 560 has one light receiving unit 542 between a pair of electrodes (electrodes 501 and 502).
  • the electrode 501 functions as a pixel electrode and is provided for each light emitting device and each light receiving device.
  • the electrode 502 functions as a common electrode and is commonly provided for multiple light-emitting devices and multiple light-receiving devices.
  • the light emitting unit 512R_1 has layers 521, 522, 523R and 524.
  • the light-emitting unit 512R_2 has a layer 522, a light-emitting layer 523R, and a layer 524.
  • FIG. The light-emitting device 550R also has a layer 525 between the light-emitting unit 512R_2 and the electrode 502. FIG. Note that the layer 525 can also be considered part of the light emitting unit 512R_2.
  • the layer 521 has, for example, a layer containing a highly hole-injecting substance (hole-injecting layer).
  • the layer 522 includes, for example, one or both of a layer containing a substance with high hole-transport properties (hole-transport layer) and a layer containing a substance with high electron-blocking properties (electron-blocking layer).
  • the layer 524 includes, for example, one or both of a layer containing a substance with high electron-transport properties (electron-transport layer) and a layer containing a substance with high hole-blocking properties (hole-blocking layer).
  • the layer 525 has, for example, a layer containing a substance with high electron-injection property (electron-injection layer).
  • layer 521 comprises an electron injection layer and layer 522 comprises an electron transport layer and/or a hole blocking layer.
  • Layer 524 has one or both of a hole-transporting layer and an electron-blocking layer, and layer 525 has a hole-injecting layer.
  • the layer 522, the light-emitting layer 523R, and the layer 524 may have the same configuration (material, film thickness, etc.) between the light-emitting unit 512R_1 and the light-emitting unit 512R_2, or may have different configurations.
  • the present invention is not limited to this.
  • the layer 521 has a function of both a hole-injection layer and a hole-transport layer, or when the layer 521 has a function of both an electron-injection layer and an electron-transport layer , the layer 522 may be omitted.
  • the charge generation layer 531 has at least a charge generation region.
  • the charge-generating layer 531 has a function of injecting electrons into one of the light-emitting units 512R_1 and 512R_2 and holes into the other when a voltage is applied between the electrodes 501 and 502 .
  • the light-emitting layer 523R included in the light-emitting device 550R includes a light-emitting substance (also referred to as a light-emitting material) that emits red light
  • the light-emitting layer 523G included in the light-emitting device 550G includes a light-emitting substance that emits green light
  • the light-emitting device 550B includes a light-emitting layer 523G that emits green light.
  • the light-emitting layer 523B in has a light-emitting substance that emits blue light.
  • the light-emitting device 550G and the light-emitting device 550B each have a configuration in which the light-emitting layer 523R of the light-emitting device 550R is replaced with the light-emitting layer 523G or the light-emitting layer 523B, and other configurations are the same as those of the light-emitting device 550R. .
  • the layers 521, 522, 524, and 525 may each have the same configuration (material, film thickness, etc.) in light-emitting devices of two or more colors or all colors. There may be different configurations in the light emitting device.
  • a structure in which a plurality of light-emitting units are connected in series via the charge generation layer 531, such as the light-emitting device 550R, the light-emitting device 550G, and the light-emitting device 550B, is referred to herein as a tandem structure.
  • a structure having one light-emitting unit between a pair of electrodes is called a single structure.
  • the tandem structure may also be called a stack structure.
  • a structure in which at least a light emitting layer is separately prepared for each light emitting device may be called an SBS (Side By Side) structure.
  • SBS Standard By Side
  • the material and structure can be optimized for each light-emitting device, which increases the degree of freedom in selecting the material and structure, and facilitates improvement in luminance and reliability.
  • the light-emitting device in the display device 500 shown in FIG. 24A has a structure in which light-emitting units are formed in series in two stages, and thus may be called a two-stage tandem structure.
  • the structure is such that the second light-emitting unit having the red light-emitting layer is stacked on the first light-emitting unit having the red light-emitting layer. .
  • the device 550B has a structure in which a second light-emitting unit having a blue light-emitting layer is stacked on a first light-emitting unit having a blue light-emitting layer.
  • the light receiving unit 542 included in the light receiving device 560 has a layer 522, an active layer 543 and a layer 524. As shown in FIG. 12A, the light receiving unit 542 included in the light receiving device 560 has a layer 522, an active layer 543 and a layer 524. As shown in FIG. 12A, the light receiving unit 542 included in the light receiving device 560 has a layer 522, an active layer 543 and a layer 524. As shown in FIG.
  • the active layer 543 functions as a photoelectric conversion layer.
  • layer 522 comprises a hole-transporting layer and layer 524 comprises an electron-transporting layer.
  • electrode 501 is the cathode and electrode 502 is the anode, layers 522 and 524 are reversed to each other.
  • the layers 522 and 524 included in the light-receiving device may each have the same configuration (material, film thickness, etc.) as that of the light-emitting devices of one or more colors or all colors, and may be different from those of the light-emitting devices of all colors. It may be a configuration.
  • FIG. 24B is a modification of the display device 500 shown in FIG. 24A.
  • a display device 500 shown in FIG. 24B is an example in which a layer 525 is shared by a plurality of light-emitting devices and a plurality of light-receiving devices like the electrodes 502 .
  • layer 525 can be referred to as a common layer.
  • Layer 525 can be, for example, a layer that functions as an electron injection layer in a light emitting device and as an electron transport layer in a light receiving device 560 .
  • a display device 500 shown in FIG. 25A is an example in which three light emitting units are stacked in a light emitting device.
  • a light-emitting device 550R has a light-emitting unit 512R_3 stacked on a light-emitting unit 512R_2 with a charge generation layer 531 interposed therebetween.
  • the light emitting unit 512R_3 has the same configuration as the light emitting unit 512R_2.
  • the light-emitting device has a plurality of charge-generation layers 531, two or more or all of the plurality of charge-generation layers 531 may have the same structure (material, film thickness, etc.), or they may all have different structures. may
  • FIG. 25B shows an example of stacking n light-emitting units (n is an integer of 2 or more).
  • the luminance obtained from the light-emitting device with the same amount of current can be increased according to the number of stacked layers.
  • the current required to obtain the same luminance can be reduced, so the power consumption of the light-emitting device can be reduced according to the number of stacked layers.
  • a conductive film that transmits visible light is used for the electrode on the side from which light from the light-emitting device is extracted, between the electrodes 501 and 502 .
  • a conductive film that reflects visible light is preferably used for the electrode on the side from which the light is not extracted.
  • the display device has a light-emitting device that emits infrared light
  • a conductive film that transmits visible light and infrared light is used for the electrode on the side from which light is extracted
  • a conductive film is used for the electrode on the side that does not extract light. It is preferable to use a conductive film that reflects visible light and infrared light.
  • a conductive film that transmits visible light may also be used for the electrode on the side from which light is not extracted.
  • the electrode is preferably arranged between the reflective layer and the light-emitting unit closest to the reflective layer. That is, the light emitted from the light emitting device may be reflected by the reflective layer and extracted from the display.
  • Metals, alloys, electrically conductive compounds, mixtures thereof, and the like can be appropriately used as materials for forming the pair of electrodes of the light-emitting device and the light-receiving device.
  • Specific examples of such materials include aluminum, titanium, chromium, manganese, iron, cobalt, nickel, copper, gallium, zinc, indium, tin, molybdenum, tantalum, tungsten, palladium, gold, platinum, silver, yttrium, Metals such as neodymium, and alloys containing appropriate combinations of these are included.
  • Examples of such materials include indium tin oxide (In—Sn oxide, also referred to as ITO), In—Si—Sn oxide (also referred to as ITSO), indium zinc oxide (In—Zn oxide), and In -W-Zn oxide and the like can be mentioned.
  • Examples of such materials include aluminum-containing alloys (aluminum alloys) such as alloys of aluminum, nickel, and lanthanum (Al-Ni-La), and alloys of silver, palladium and copper (Ag-Pd-Cu, APC Also referred to as).
  • elements belonging to Group 1 or Group 2 of the periodic table of elements not exemplified above e.g., lithium, cesium, calcium, strontium
  • europium e.g., europium
  • rare earth metals such as ytterbium
  • appropriate combinations of these alloy containing, graphene, and the like e.g., graphene, graphene, and the like.
  • the light-emitting device preferably employs a micro-optical resonator (microcavity) structure. Therefore, one of the pair of electrodes of the light-emitting device preferably has an electrode (semi-transmissive/semi-reflective electrode) that is transparent and reflective to visible light, and the other is an electrode that is reflective to visible light ( reflective electrode). Since the light-emitting device has a microcavity structure, the light emitted from the light-emitting layer can be resonated between both electrodes, and the light emitted from the light-emitting device can be enhanced. A microcavity structure may also be applied to the light receiving device.
  • the semi-transmissive/semi-reflective electrode has a laminated structure of a conductive layer that can be used as a reflective electrode and a conductive layer that can be used as an electrode that transmits visible light (also referred to as a transparent electrode). can be done.
  • the light transmittance of the transparent electrode is set to 40% or more.
  • an electrode having a transmittance of 40% or more for visible light (light having a wavelength of 400 nm or more and less than 750 nm) as the transparent electrode of the light emitting device.
  • the visible light reflectance of the semi-transmissive/semi-reflective electrode is 10% or more and 95% or less, preferably 30% or more and 80% or less.
  • the visible light reflectance of the reflective electrode is 40% or more and 100% or less, preferably 70% or more and 100% or less.
  • the resistivity of these electrodes is preferably 1 ⁇ 10 ⁇ 2 ⁇ cm or less.
  • a light-emitting device has at least a light-emitting layer. Further, in the light-emitting device, layers other than the light-emitting layer include a substance with high hole-injection property, a substance with high hole-transport property, a hole-blocking material, a substance with high electron-transport property, an electron-blocking material, and a layer with high electron-injection property. A layer containing a substance, a bipolar substance (a substance with high electron-transport properties and high hole-transport properties), or the like may be further included.
  • the light-emitting device has, in addition to the light-emitting layer, one or more of a hole injection layer, a hole transport layer, a hole blocking layer, a charge generation layer, an electron blocking layer, an electron transport layer, and an electron injection layer. can be configured.
  • Either a low-molecular-weight compound or a high-molecular-weight compound can be used in the light-emitting device, and an inorganic compound may be included.
  • Each of the layers constituting the light-emitting device can be formed by a vapor deposition method (including a vacuum vapor deposition method), a transfer method, a printing method, an inkjet method, a coating method, or the like.
  • the emissive layer has one or more emissive materials.
  • a substance that emits light such as blue, purple, blue-violet, green, yellow-green, yellow, orange, or red is used as appropriate.
  • a substance that emits near-infrared light can be used as the light-emitting substance.
  • Examples of light-emitting substances include fluorescent materials, phosphorescent materials, TADF materials, and quantum dot materials.
  • fluorescent materials include pyrene derivatives, anthracene derivatives, triphenylene derivatives, fluorene derivatives, carbazole derivatives, dibenzothiophene derivatives, dibenzofuran derivatives, dibenzoquinoxaline derivatives, quinoxaline derivatives, pyridine derivatives, pyrimidine derivatives, phenanthrene derivatives, and naphthalene derivatives. are mentioned.
  • Examples of phosphorescent materials include organometallic complexes (especially iridium complexes) having a 4H-triazole skeleton, 1H-triazole skeleton, imidazole skeleton, pyrimidine skeleton, pyrazine skeleton, or pyridine skeleton, and phenylpyridine derivatives having an electron-withdrawing group.
  • organometallic complexes especially iridium complexes
  • platinum complexes, rare earth metal complexes, and the like, which serve as ligands, can be mentioned.
  • the light-emitting layer may contain one or more organic compounds (host material, assist material, etc.) in addition to the light-emitting substance (guest material).
  • One or both of a highly hole-transporting substance (hole-transporting material) and a highly electron-transporting substance (electron-transporting material) can be used as the one or more organic compounds.
  • a highly hole-transporting substance hole-transporting material
  • a highly electron-transporting substance electron-transporting material
  • electron-transporting material a material having a high electron-transporting property that can be used for the electron-transporting layer, which will be described later, can be used.
  • Bipolar materials or TADF materials may also be used as one or more organic compounds.
  • the light-emitting layer preferably includes, for example, a phosphorescent material and a combination of a hole-transporting material and an electron-transporting material that easily form an exciplex.
  • ExTET Exciplex-Triplet Energy Transfer
  • a combination that forms an exciplex that emits light that overlaps with the wavelength of the absorption band on the lowest energy side of the light-emitting substance energy transfer becomes smooth and light emission can be efficiently obtained. With this configuration, high efficiency, low-voltage driving, and long life of the light-emitting device can be realized at the same time.
  • the hole-injecting layer is a layer that injects holes from the anode to the hole-transporting layer, and contains a material with high hole-injecting properties.
  • highly hole-injecting materials include aromatic amine compounds and composite materials containing a hole-transporting material and an acceptor material (electron-accepting material).
  • hole-transporting material a material having a high hole-transporting property that can be used for the hole-transporting layer, which will be described later, can be used.
  • oxides of metals belonging to groups 4 to 8 in the periodic table can be used.
  • Specific examples include molybdenum oxide, vanadium oxide, niobium oxide, tantalum oxide, chromium oxide, tungsten oxide, manganese oxide, and rhenium oxide.
  • molybdenum oxide is particularly preferred because it is stable even in the atmosphere, has low hygroscopicity, and is easy to handle.
  • An organic acceptor material containing fluorine can also be used.
  • Organic acceptor materials such as quinodimethane derivatives, chloranil derivatives, and hexaazatriphenylene derivatives can also be used.
  • a material with a high hole-injection property a material containing a hole-transporting material and an oxide of a metal belonging to Groups 4 to 8 in the above-described periodic table (typically molybdenum oxide) is used. may be used.
  • the hole-transporting layer is a layer that transports holes injected from the anode to the light-emitting layer by means of the hole-injecting layer.
  • a hole-transporting layer is a layer containing a hole-transporting material.
  • the hole-transporting material a substance having a hole mobility of 1 ⁇ 10 ⁇ 6 cm 2 /Vs or more is preferable. Note that substances other than these can be used as long as they have a higher hole-transport property than electron-transport property.
  • hole-transporting materials include ⁇ -electron-rich heteroaromatic compounds (e.g., carbazole derivatives, thiophene derivatives, furan derivatives, etc.), aromatic amines (compounds having an aromatic amine skeleton), and other highly hole-transporting materials. is preferred.
  • ⁇ -electron-rich heteroaromatic compounds e.g., carbazole derivatives, thiophene derivatives, furan derivatives, etc.
  • aromatic amines compounds having an aromatic amine skeleton
  • other highly hole-transporting materials is preferred.
  • the electron blocking layer is provided in contact with the light emitting layer.
  • the electron blocking layer is a layer containing a material capable of transporting holes and blocking electrons.
  • a material having an electron blocking property can be used among the above hole-transporting materials.
  • the electron blocking layer has hole-transporting properties, it can also be called a hole-transporting layer. Moreover, the layer which has electron blocking property can also be called an electron blocking layer among hole transport layers.
  • the electron-transporting layer is a layer that transports electrons injected from the cathode to the light-emitting layer by the electron-injecting layer.
  • the electron-transporting layer is a layer containing an electron-transporting material.
  • an electron-transporting material a substance having an electron mobility of 1 ⁇ 10 ⁇ 6 cm 2 /Vs or more is preferable. Note that substances other than these substances can be used as long as they have a higher electron-transport property than hole-transport property.
  • electron-transporting materials include metal complexes having a quinoline skeleton, metal complexes having a benzoquinoline skeleton, metal complexes having an oxazole skeleton, metal complexes having a thiazole skeleton, oxadiazole derivatives, triazole derivatives, imidazole derivatives, ⁇ electron deficient including oxazole derivatives, thiazole derivatives, phenanthroline derivatives, quinoline derivatives with quinoline ligands, benzoquinoline derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, pyridine derivatives, bipyridine derivatives, pyrimidine derivatives, and other nitrogen-containing heteroaromatic compounds
  • a material having a high electron transport property such as a type heteroaromatic compound can be used.
  • the hole blocking layer is provided in contact with the light emitting layer.
  • the hole-blocking layer is a layer containing a material that has electron-transport properties and can block holes.
  • a material having a hole-blocking property can be used among the above-described electron-transporting materials.
  • the hole blocking layer has electron transport properties, it can also be called an electron transport layer. Moreover, among the electron transport layers, a layer having hole blocking properties can also be referred to as a hole blocking layer.
  • the electron injection layer is a layer that injects electrons from the cathode into the electron transport layer, and is a layer containing a material with high electron injection properties.
  • Alkali metals, alkaline earth metals, or compounds thereof can be used as materials with high electron injection properties.
  • a composite material containing an electron-transporting material and a donor material (electron-donating material) can also be used as a material with high electron-injecting properties.
  • the LUMO level of the material with high electron injection properties has a small difference (specifically, 0.5 eV or less) from the value of the work function of the material used for the cathode.
  • the electron injection layer includes, for example, lithium, cesium, ytterbium, lithium fluoride (LiF), cesium fluoride (CsF), calcium fluoride (CaF x , X is an arbitrary number), 8-(quinolinolato)lithium (abbreviation: Liq), 2-(2-pyridyl)phenoratritium (abbreviation: LiPP), 2-(2-pyridyl)-3-pyridinolatritium (abbreviation: LiPPy), 4-phenyl-2-(2-pyridyl)pheno Alkali metals such as latolithium (abbreviation: LiPPP), lithium oxide (LiO x ), cesium carbonate, alkaline earth metals, or compounds thereof can be used.
  • the electron injection layer may have a laminated structure of two or more layers. Examples of the laminated structure include a structure in which lithium fluoride is used for the first layer and ytterbium is provided for the second layer.
  • the electron injection layer may have an electron-transporting material.
  • a compound having a lone pair of electrons and an electron-deficient heteroaromatic ring can be used as the electron-transporting material.
  • a compound having at least one of a pyridine ring, diazine ring (pyrimidine ring, pyrazine ring, pyridazine ring), and triazine ring can be used.
  • the lowest unoccupied molecular orbital (LUMO) level of an organic compound having an unshared electron pair is preferably ⁇ 3.6 eV or more and ⁇ 2.3 eV or less.
  • CV cyclic voltammetry
  • photoelectron spectroscopy optical absorption spectroscopy
  • inverse photoemission spectroscopy etc. are used to determine the highest occupied molecular orbital (HOMO) level and LUMO level of an organic compound. can be estimated.
  • BPhen 4,7-diphenyl-1,10-phenanthroline
  • NBPhen diquinoxalino [ 2,3-a: 2′,3′-c]phenazine
  • TmPPPyTz 2,4,6-tris[3′-(pyridin-3-yl)biphenyl-3-yl]-1,3, 5-triazine
  • the charge generation layer has at least a charge generation layer as described above.
  • the charge generation region preferably contains an acceptor material.
  • the charge generation layer preferably has a layer containing a material with high electron injection properties.
  • This layer can also be called an electron injection buffer layer.
  • the electron injection buffer layer is preferably provided between the charge generation region and the electron transport layer. Since the injection barrier between the charge generation region and the electron transport layer can be relaxed by providing the electron injection buffer layer, electrons generated in the charge generation region can be easily injected into the electron transport layer.
  • the electron injection buffer layer preferably contains an alkali metal or an alkaline earth metal, and can be configured to contain, for example, an alkali metal compound or an alkaline earth metal compound.
  • the electron injection buffer layer preferably has an inorganic compound containing an alkali metal and oxygen, or an inorganic compound containing an alkaline earth metal and oxygen. Lithium (Li 2 O), etc.) is more preferred.
  • the above materials applicable to the electron injection layer can be preferably used.
  • the charge generation layer preferably has a layer containing a material with high electron transport properties. Such layers may also be referred to as electron relay layers.
  • the electron relay layer is preferably provided between the charge generation region and the electron injection buffer layer. If the charge generation region does not have an electron injection buffer layer, the electron relay layer is preferably provided between the charge generation region and the electron transport layer.
  • the electron relay layer has a function of smoothly transferring electrons by preventing interaction between the charge generation region and the electron injection buffer layer (or electron transport layer).
  • a phthalocyanine-based material such as copper (II) phthalocyanine (abbreviation: CuPc), or a metal complex having a metal-oxygen bond and an aromatic ligand.
  • charge generation region electron injection buffer layer, and electron relay layer may not be clearly distinguished depending on their cross-sectional shape, characteristics, or the like.
  • the charge generation layer may contain a donor material instead of the acceptor material.
  • the charge-generating layer may have a layer containing an electron-transporting material and a donor material, which are applicable to the electron-injecting layer described above.
  • the light-emitting material of the light-emitting layer is not particularly limited.
  • light-emitting device 550R has two light-emitting layers 523R each having a phosphorescent material
  • light-emitting device 550G has two light-emitting layers 523G each having a fluorescent material
  • light-emitting device 550B has Each of the two light-emitting layers 523B can have a structure including a fluorescent material.
  • light-emitting device 550R has two light-emitting layers 523R each having a phosphorescent material
  • light-emitting device 550G has two light-emitting layers 523G each having a phosphorescent material
  • light-emitting device 550B has Each of the two light-emitting layers 523B can have a structure including a fluorescent material.
  • the display device of one embodiment of the present invention has a structure in which all the light-emitting layers of the light-emitting devices 550R, 550G, and 550B are made of a fluorescent material, or all the light-emitting layers of the light-emitting devices 550R, 550G, and 550B are made of phosphorescent material. A configuration using materials may be applied.
  • a phosphorescent material is used for the light-emitting layer 523R of the light-emitting unit 512R_1 and a fluorescent material is used for the light-emitting layer 523R of the light-emitting unit 512R_2, or a fluorescent material is used for the light-emitting layer 523R of the light-emitting unit 512R_1.
  • a structure in which a phosphorescent material is used for the light-emitting layer 523R included in the light-emitting unit 512R_2, that is, a structure in which different light-emitting materials are used for the light-emitting layer in the first stage and the light-emitting layer in the second stage may be applied.
  • the description here is made for the light-emitting unit 512R_1 and the light-emitting unit 512R_2, the same configuration can be applied to the light-emitting unit 512G_1 and the light-emitting unit 512G_2 as well as the light-emitting unit 512B_1 and the light-emitting unit 512B_2. can.
  • Either a low-molecular-weight compound or a high-molecular-weight compound can be used for the light-receiving device, and an inorganic compound may be included.
  • the layers constituting the light-receiving device can be formed by methods such as a vapor deposition method (including a vacuum vapor deposition method), a transfer method, a printing method, an inkjet method, and a coating method.
  • the active layer of the light receiving device contains a semiconductor.
  • the semiconductor include inorganic semiconductors such as silicon and organic semiconductors including organic compounds.
  • an organic semiconductor is used as the semiconductor included in the active layer.
  • the light-emitting layer and the active layer can be formed by the same method (for example, a vacuum deposition method), and a manufacturing apparatus can be shared, which is preferable.
  • Electron-accepting organic semiconductor materials such as fullerenes (eg, C 60 , C 70 , etc.) and fullerene derivatives can be used as n-type semiconductor materials for the active layer.
  • fullerene derivatives include [6,6]-Phenyl- C71 -butyric acid methyl ester (abbreviation: PC70BM), [6,6]-Phenyl- C61 -butyric acid methyl ester (abbreviation: PC60BM), 1 ',1'',4',4''-Tetrahydro-di[1,4]methanonaphthaleno[1,2:2',3',56,60:2'',3''][5,6] fullerene-C 60 (abbreviation: ICBA) and the like.
  • PC70BM [6,6]-Phenyl- C71 -butyric acid methyl ester
  • PC60BM [6,6]-Phenyl- C61 -buty
  • n-type semiconductor materials include perylenetetracarboxylic acid derivatives such as N,N′-dimethyl-3,4,9,10-perylenetetracarboxylic acid diimide (abbreviation: Me-PTCDI), and 2 ,2′-(5,5′-(thieno[3,2-b]thiophene-2,5-diyl)bis(thiophene-5,2-diyl))bis(methan-1-yl-1-ylidene) Dimalononitrile (abbreviation: FT2TDMN) can be mentioned.
  • Me-PTCDI N,N′-dimethyl-3,4,9,10-perylenetetracarboxylic acid diimide
  • FT2TDMN 2 ,2′-(5,5′-(thieno[3,2-b]thiophene-2,5-diyl)bis(thiophene-5,2-diyl))bis(methan-1-yl-1-ylid
  • Materials for the n-type semiconductor include metal complexes having a quinoline skeleton, metal complexes having a benzoquinoline skeleton, metal complexes having an oxazole skeleton, metal complexes having a thiazole skeleton, oxadiazole derivatives, triazole derivatives, imidazole derivatives, Oxazole derivatives, thiazole derivatives, phenanthroline derivatives, quinoline derivatives, benzoquinoline derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, pyridine derivatives, bipyridine derivatives, pyrimidine derivatives, naphthalene derivatives, anthracene derivatives, coumarin derivatives, rhodamine derivatives, triazine derivatives, and quinones derivatives and the like.
  • Materials for the p-type semiconductor of the active layer include copper (II) phthalocyanine (CuPc), tetraphenyldibenzoperiflanthene (DBP), zinc phthalocyanine (ZnPc), and tin phthalocyanine. (SnPc), quinacridones, and electron-donating organic semiconductor materials such as rubrene.
  • Examples of p-type semiconductor materials include carbazole derivatives, thiophene derivatives, furan derivatives, and compounds having an aromatic amine skeleton.
  • materials for p-type semiconductors include naphthalene derivatives, anthracene derivatives, pyrene derivatives, triphenylene derivatives, fluorene derivatives, pyrrole derivatives, benzofuran derivatives, benzothiophene derivatives, indole derivatives, dibenzofuran derivatives, dibenzothiophene derivatives, indolocarbazole derivatives, porphyrin derivatives, phthalocyanine derivatives, naphthalocyanine derivatives, quinacridone derivatives, rubrene derivatives, tetracene derivatives, polyphenylenevinylene derivatives, polyparaphenylene derivatives, polyfluorene derivatives, polyvinylcarbazole derivatives, and polythiophene derivatives.
  • the HOMO level of the electron-donating organic semiconductor material is preferably shallower (higher) than the HOMO level of the electron-accepting organic semiconductor material.
  • the LUMO level of the electron-donating organic semiconductor material is preferably shallower (higher) than the LUMO level of the electron-accepting organic semiconductor material.
  • a spherical fullerene as the electron-accepting organic semiconductor material and an organic semiconductor material having a nearly planar shape as the electron-donating organic semiconductor material. Molecules with similar shapes tend to gather together, and when molecules of the same type aggregate, the energy levels of the molecular orbitals are close to each other, so the carrier transportability can be enhanced.
  • 6-diyl]-2,5-thiophenediyl[5,7-bis(2-ethylhexyl)-4,8-dioxo-4H,8H-benzo[1,2-c:4,5-c′]dithiophene-1 ,3-diyl]]polymer (abbreviation: PBDB-T) or a polymer compound such as a PBDB-T derivative can be used.
  • a method of dispersing an acceptor material in PBDB-T or a PBDB-T derivative can be used.
  • the active layer is preferably formed by co-depositing an n-type semiconductor and a p-type semiconductor.
  • the active layer may be formed by laminating an n-type semiconductor and a p-type semiconductor.
  • three or more kinds of materials may be mixed in the active layer.
  • a third material may be mixed in addition to the n-type semiconductor material and the p-type semiconductor material.
  • the third material may be a low-molecular compound or a high-molecular compound.
  • the light-receiving device further includes, as layers other than the active layer, a layer containing a highly hole-transporting substance, a highly electron-transporting substance, a bipolar substance (substances with high electron-transporting and hole-transporting properties), or the like. may have.
  • the light-receiving device can be configured to have one or both of a hole-transporting layer and an electron-transporting layer in addition to the active layer.
  • the layer is not limited to the above, and may further include a layer containing a highly hole-injecting substance, a hole-blocking material, a highly electron-injecting material, an electron-blocking material, or the like.
  • materials that can be used in the above-described light-emitting device can be used.
  • polymer compounds such as poly(3,4-ethylenedioxythiophene)/poly(styrenesulfonic acid) (PEDOT/PSS), molybdenum oxide, iodide Inorganic compounds such as copper (CuI) can be used.
  • Inorganic compounds such as zinc oxide (ZnO) and organic compounds such as polyethyleneimine ethoxylate (PEIE) can be used as the electron-transporting material or the hole-blocking material.
  • the light receiving device may have, for example, a mixed film of PEIE and ZnO.
  • light-emitting devices are arranged in matrix in the display portion, and an image can be displayed on the display portion.
  • light receiving devices are arranged in a matrix in the display section, and the display section has one or both of an imaging function and a sensing function in addition to an image display function.
  • the display part can be used for an image sensor or a touch sensor. That is, by detecting light on the display portion, an image can be captured, or proximity or contact of an object (a finger, hand, pen, or the like) can be detected.
  • the display device of one embodiment of the present invention can use a light-emitting device as a light source of a sensor.
  • the light-receiving device can detect the reflected light (or scattered light).
  • imaging or touch detection is possible.
  • a display device of one embodiment of the present invention includes a light-emitting device and a light-receiving device in a pixel.
  • a display device of one embodiment of the present invention uses an organic EL device as a light-emitting device and an organic photodiode as a light-receiving device.
  • An organic EL device and an organic photodiode can be formed on the same substrate. Therefore, an organic photodiode can be incorporated in a display device using an organic EL device.
  • a display device having a light-emitting device and a light-receiving device in a pixel
  • contact or proximity of an object can be detected while displaying an image.
  • an image can be displayed by all the sub-pixels of the display device, but also some sub-pixels can emit light as a light source and the remaining sub-pixels can be used to display an image.
  • the display device can capture an image using the light receiving device.
  • the display device of this embodiment can be used as a scanner.
  • an image sensor can be used to capture an image for personal authentication using a fingerprint, palm print, iris, pulse shape (including vein shape and artery shape), face, or the like.
  • an image sensor can be used to capture images around the eye, on the surface of the eye, or inside the eye (such as the fundus) of the user of the wearable device. Therefore, the wearable device can have a function of detecting any one or more selected from the user's blink, black eye movement, and eyelid movement.
  • the light receiving device can be used as a touch sensor (also referred to as a direct touch sensor) or a near touch sensor (also referred to as a hover sensor, hover touch sensor, non-contact sensor, or touchless sensor).
  • a touch sensor also referred to as a direct touch sensor
  • a near touch sensor also referred to as a hover sensor, hover touch sensor, non-contact sensor, or touchless sensor.
  • a touch sensor or near-touch sensor can detect the proximity or contact of an object (such as a finger, hand, or pen).
  • a touch sensor can detect an object by direct contact between the display device and the object. Also, the near-touch sensor can detect the object even if the object does not touch the display device. For example, it is preferable that the display device can detect the object when the distance between the display device and the object is 0.1 mm or more and 300 mm or less, preferably 3 mm or more and 50 mm or less. With this structure, the display device can be operated without direct contact with the object, in other words, the display device can be operated without contact. With the above configuration, the risk of staining or scratching the display device can be reduced, or the object can be displayed without directly touching the stain (for example, dust or virus) attached to the display device. It becomes possible to operate the device.
  • the stain for example, dust or virus
  • the display device of one embodiment of the present invention can have a variable refresh rate.
  • the power consumption can be reduced by adjusting the refresh rate (for example, in the range of 1 Hz to 240 Hz) according to the content displayed on the display device.
  • the drive frequency of the touch sensor or the near-touch sensor may be changed according to the refresh rate. For example, when the refresh rate of the display device is 120 Hz, the driving frequency of the touch sensor or the near-touch sensor can be higher than 120 Hz (typically 240 Hz). With this structure, low power consumption can be achieved and the response speed of the touch sensor or the near touch sensor can be increased.
  • a lens can be provided over the light receiving device.
  • the display device 100 shown in FIGS. 26A to 26C has a layer 353 having light receiving devices, a functional layer 355 and a layer 357 having light emitting devices between substrates 351 and 359 .
  • Functional layer 355 has circuitry to drive the light receiving device and circuitry to drive the light emitting device.
  • One or more of switches, transistors, capacitors, resistors, wirings, terminals, and the like can be provided in the functional layer 355 . Note that when the light-emitting device and the light-receiving device are driven by a passive matrix method, the configuration may be such that the switch and the transistor are not provided.
  • a finger 352 touching the display device 100 reflects light emitted by a light-emitting device in a layer 357 having a light-emitting device, so that a light-receiving device in a layer 353 having a light-receiving device reflects the light. Detect light. Thereby, it is possible to detect that the finger 352 touches the display device 100 .
  • FIGS. 26B and 26C it may have a function of detecting or imaging an object that is close to (not in contact with) the display device.
  • FIG. 26B shows an example of detecting a finger of a person
  • FIG. 26C shows an example of detecting information around, on the surface of, or inside the human eye (number of blinks, eye movement, eyelid movement, etc.).
  • the electronic devices of this embodiment each include the display device of one embodiment of the present invention in a display portion.
  • the display device of one embodiment of the present invention can easily have high definition and high resolution. Therefore, it can be used for display portions of various electronic devices.
  • Examples of electronic devices include televisions, desktop or notebook personal computers, monitors for computers, digital signage, large game machines such as pachinko machines, and other electronic devices with relatively large screens. Examples include cameras, digital video cameras, digital photo frames, mobile phones, mobile game machines, mobile information terminals, and sound reproducing devices.
  • the display device of one embodiment of the present invention can have high definition, it can be suitably used for an electronic device having a relatively small display portion.
  • electronic devices include wristwatch-type and bracelet-type information terminals (wearable devices), VR devices such as head-mounted displays, glasses-type AR devices, and MR devices.
  • wearable devices include wristwatch-type and bracelet-type information terminals (wearable devices), VR devices such as head-mounted displays, glasses-type AR devices, and MR devices.
  • a wearable device that can be attached to a part is exemplified.
  • a display device of one embodiment of the present invention includes HD (1280 ⁇ 720 pixels), FHD (1920 ⁇ 1080 pixels), WQHD (2560 ⁇ 1440 pixels), WQXGA (2560 ⁇ 1600 pixels), 4K (2560 ⁇ 1600 pixels), 3840 ⁇ 2160) and 8K (7680 ⁇ 4320 pixels).
  • the resolution it is preferable to set the resolution to 4K, 8K, or higher.
  • the pixel density (definition) of the display device of one embodiment of the present invention is preferably 100 ppi or more, preferably 300 ppi or more, more preferably 500 ppi or more, more preferably 1000 ppi or more, more preferably 2000 ppi or more, and 3000 ppi or more.
  • the display device can support various screen ratios such as 1:1 (square), 4:3, 16:9, 16:10.
  • the electronic device of this embodiment includes sensors (force, displacement, position, velocity, acceleration, angular velocity, number of revolutions, distance, light, liquid, magnetism, temperature, chemical substance, sound, time, hardness, electric field, current, voltage , power, radiation, flow, humidity, gradient, vibration, odor or infrared).
  • the electronic device of this embodiment can have various functions. For example, functions to display various information (still images, moving images, text images, etc.) on the display, touch panel functions, functions to display calendars, dates or times, functions to execute various software (programs), wireless communication function, a function of reading a program or data recorded on a recording medium, and the like.
  • FIGS. 27A to 27D An example of a wearable device that can be worn on the head will be described with reference to FIGS. 27A to 27D.
  • These wearable devices have at least one of a function of displaying AR content, a function of displaying VR content, a function of displaying SR content, and a function of displaying MR content. If the electronic device has a function of displaying at least one content such as AR, VR, SR, and MR, it is possible to enhance the user's sense of immersion.
  • Electronic device 700A shown in FIG. 27A and electronic device 700B shown in FIG. It has a control section (not shown), an imaging section (not shown), a pair of optical members 753 , a frame 757 and a pair of nose pads 758 .
  • the display device of one embodiment of the present invention can be applied to the display panel 751 . Therefore, the electronic device can display images with extremely high definition.
  • the display device of one embodiment of the present invention since light emitted from the light-emitting portion is extracted through the lens, light extraction efficiency is high, and an extremely bright image can be displayed. Therefore, when used as an electronic device capable of AR display, an image with good visibility can be displayed even when external light is strong.
  • the display device when the display device has a light receiving device, the light receiving device can capture an image of the pupil and perform iris authentication.
  • line-of-sight tracking can also be performed by the light receiving device. By performing line-of-sight tracking, it is possible to specify the object and position that the user is looking at, so it is possible to select functions provided in the electronic device, execute software, and the like.
  • Each of electronic device 700A and electronic device 700B can project an image displayed on display panel 751 onto display area 756 of optical member 753 . Since the optical member 753 has translucency, the user can see the image displayed in the display area superimposed on the transmitted image visually recognized through the optical member 753 . Therefore, electronic device 700A and electronic device 700B are electronic devices capable of AR display.
  • Electronic device 700A and electronic device 700B may be provided with a camera capable of capturing an image of the front as an imaging unit.
  • Electronic device 700A and electronic device 700B each include an acceleration sensor such as a gyro sensor to detect the orientation of the user's head and display an image corresponding to the orientation in display area 756. can also
  • the communication unit has a wireless communication device, and can supply a video signal or the like by the wireless communication device.
  • a connector capable of connecting a cable to which the video signal and the power supply potential are supplied may be provided.
  • the electronic device 700A and the electronic device 700B are provided with batteries, and can be charged wirelessly and/or wiredly.
  • the housing 721 may be provided with a touch sensor module.
  • the touch sensor module has a function of detecting that the outer surface of the housing 721 is touched.
  • the touch sensor module can detect a user's tap operation or slide operation and execute various processes. For example, it is possible to perform processing such as pausing or resuming a moving image by a tap operation, and fast-forward or fast-reverse processing can be performed by a slide operation. Further, by providing a touch sensor module for each of the two housings 721, the range of operations can be expanded.
  • Various touch sensors can be applied as the touch sensor module.
  • various methods such as a capacitance method, a resistive film method, an infrared method, an electromagnetic induction method, a surface acoustic wave method, and an optical method can be adopted.
  • a photoelectric conversion device (also referred to as a photoelectric conversion element) can be used as the light receiving device.
  • a photoelectric conversion device also referred to as a photoelectric conversion element
  • One or both of an inorganic semiconductor and an organic semiconductor can be used for the active layer of the photoelectric conversion device.
  • the display device of one embodiment of the present invention can be applied to the display portion 820 . Therefore, the electronic device can display images with extremely high definition. This allows the user to feel a high sense of immersion.
  • the display unit 820 is provided inside the housing 821 at a position where it can be viewed through the lens 832 . By displaying different images on the pair of display portions 820, three-dimensional display using parallax can be performed.
  • Each of the electronic device 800A and the electronic device 800B can be said to be an electronic device for VR.
  • a user wearing electronic device 800 ⁇ /b>A or electronic device 800 ⁇ /b>B can view an image displayed on display unit 820 through lens 832 .
  • Electronic device 800A and electronic device 800B each have a mechanism for adjusting the left and right positions of lens 832 and display unit 820 so that they are optimally positioned according to the position of the user's eyes. preferably. Further, it is preferable to have a mechanism for adjusting focus by changing the distance between the lens 832 and the display portion 820 .
  • Mounting portion 823 allows the user to mount electronic device 800A or electronic device 800B on the head.
  • the shape is illustrated as a temple of spectacles (also referred to as a temple), but the shape is not limited to this.
  • the mounting portion 823 may be worn by the user, and may be, for example, a helmet-type or band-type shape.
  • the imaging unit 825 has a function of acquiring external information. Data acquired by the imaging unit 825 can be output to the display unit 820 . An image sensor can be used for the imaging unit 825 . Also, a plurality of cameras may be provided so as to be able to deal with a plurality of angles of view such as telephoto and wide angle.
  • a distance measuring sensor capable of measuring the distance to an object
  • the imaging unit 825 is one aspect of the detection unit.
  • the detection unit for example, an image sensor or a distance image sensor such as LIDAR (Light Detection and Ranging) can be used.
  • LIDAR Light Detection and Ranging
  • the electronic device 800A may have a vibration mechanism that functions as bone conduction earphones.
  • a vibration mechanism that functions as bone conduction earphones.
  • one or more of the display portion 820, the housing 821, and the mounting portion 823 can have the vibration mechanism.
  • the user can enjoy video and audio simply by wearing the electronic device 800A without the need for separate audio equipment such as headphones, earphones, or speakers.
  • Electronic device 800A and electronic device 800B may each have an input terminal.
  • the input terminal can be connected to a cable for supplying a video signal from a video output device or the like and power for charging a battery provided in the electronic device.
  • An electronic device of one embodiment of the present invention may have a function of wirelessly communicating with the earphone 750 .
  • Earphone 750 has a communication unit (not shown) and has a wireless communication function.
  • the earphone 750 can receive information (eg, audio data) from the electronic device by wireless communication function.
  • information eg, audio data
  • electronic device 700A shown in FIG. 27A has a function of transmitting information to earphone 750 by a wireless communication function.
  • electronic device 800A shown in FIG. 27C has a function of transmitting information to earphone 750 by a wireless communication function.
  • the electronic device may have an earphone section.
  • Electronic device 700B shown in FIG. 27B has earphone section 727 .
  • the earphone section 727 and the control section can be configured to be wired to each other.
  • a part of the wiring connecting the earphone section 727 and the control section may be arranged inside the housing 721 or the mounting section 723 .
  • electronic device 800B shown in FIG. 27D has earphone section 827.
  • the earphone unit 827 and the control unit 824 can be configured to be wired to each other.
  • a part of the wiring connecting the earphone section 827 and the control section 824 may be arranged inside the housing 821 or the mounting section 823 .
  • the earphone section 827 and the mounting section 823 may have magnets. Accordingly, the earphone section 827 can be fixed to the mounting section 823 by magnetic force, which is preferable because it facilitates storage.
  • the electronic device may have an audio output terminal to which earphones, headphones, or the like can be connected. Also, the electronic device may have one or both of an audio input terminal and an audio input mechanism.
  • the voice input mechanism for example, a sound collecting device such as a microphone can be used.
  • the electronic device may function as a so-called headset.
  • the electronic device of one embodiment of the present invention includes both glasses type (electronic device 700A, electronic device 700B, etc.) and goggle type (electronic device 800A, electronic device 800B, etc.). preferred.
  • the electronic device of one embodiment of the present invention can transmit information to the earphone by wire or wirelessly.
  • An electronic device 6500 illustrated in FIG. 28A is a personal digital assistant that can be used as a smart phone.
  • An electronic device 6500 includes a housing 6501, a display portion 6502, a power button 6503, a button 6504, a speaker 6505, a microphone 6506, a camera 6507, a light source 6508, and the like.
  • a display portion 6502 has a touch panel function.
  • the display device of one embodiment of the present invention can be applied to the display portion 6502 .
  • light emitted from the light-emitting portion is extracted through the lens, so that light extraction efficiency is high and an extremely bright image can be displayed.
  • FIG. 28B is a schematic cross-sectional view including the end of housing 6501 on the microphone 6506 side.
  • a light-transmitting protective member 6510 is provided on the display surface side of the housing 6501, and a display panel 6511, an optical member 6512, a touch sensor panel 6513, and a printer are placed in a space surrounded by the housing 6501 and the protective member 6510.
  • a substrate 6517, a battery 6518, and the like are arranged.
  • a display panel 6511, an optical member 6512, and a touch sensor panel 6513 are fixed to the protective member 6510 with an adhesive layer (not shown).
  • a light-receiving device included in the display device of one embodiment of the present invention can also function as the touch-sensor panel.
  • a light-receiving device included in the display device of one embodiment of the present invention detects light through a lens, has high photosensitivity, and is excellent in detecting a touch position. Also, the light receiving device can acquire an image for fingerprint authentication.
  • a portion of the display panel 6511 is folded back in a region outside the display portion 6502, and the FPC 6515 is connected to the folded portion.
  • An IC6516 is mounted on the FPC6515.
  • the FPC 6515 is connected to terminals provided on the printed circuit board 6517 .
  • the flexible display of one embodiment of the present invention can be applied to the display panel 6511 . Therefore, an extremely lightweight electronic device can be realized. In addition, since the display panel 6511 is extremely thin, the thickness of the electronic device can be reduced and the large-capacity battery 6518 can be mounted. In addition, by folding back part of the display panel 6511 and arranging a connection portion with the FPC 6515 on the back side of the pixel portion, an electronic device with a narrow frame can be realized.
  • FIG. 28C shows an example of a television device.
  • a television set 7100 has a display portion 7000 incorporated in a housing 7101 .
  • a configuration in which a housing 7101 is supported by a stand 7103 is shown.
  • the display device of one embodiment of the present invention can be applied to the display portion 7000 .
  • light emitted from the light-emitting portion is extracted through the lens, so that light extraction efficiency is high and an extremely bright image can be displayed.
  • the operation of the television apparatus 7100 shown in FIG. 28C can be performed using operation switches provided in the housing 7101 and a separate remote controller 7111 .
  • the display portion 7000 may be provided with a touch sensor, and the television device 7100 may be operated by touching the display portion 7000 with a finger or the like.
  • the remote controller 7111 may have a display section for displaying information output from the remote controller 7111 .
  • a channel and a volume can be operated with operation keys or a touch panel included in the remote controller 7111 , and an image displayed on the display portion 7000 can be operated.
  • television apparatus 7100 is configured to include a receiver, a modem, and the like.
  • the receiver can receive general television broadcasts. Also, by connecting to a wired or wireless communication network via a modem, one-way (from the sender to the receiver) or two-way (between the sender and the receiver, or between the receivers, etc.) information communication. is also possible.
  • FIG. 28D shows an example of a notebook personal computer.
  • a notebook personal computer 7200 has a housing 7211, a keyboard 7212, a pointing device 7213, an external connection port 7214, and the like.
  • the display portion 7000 is incorporated in the housing 7211 .
  • the display device of one embodiment of the present invention can be applied to the display portion 7000 .
  • light emitted from the light-emitting portion is extracted through the lens, so that light extraction efficiency is high and an extremely bright image can be displayed.
  • FIGS. 28E and 28F An example of digital signage is shown in FIGS. 28E and 28F.
  • a digital signage 7300 illustrated in FIG. 28E includes a housing 7301, a display portion 7000, speakers 7303, and the like. Furthermore, it can have an LED lamp, an operation key (including a power switch or an operation switch), connection terminals, various sensors, a microphone, and the like.
  • FIG. 28F is a digital signage 7400 mounted on a cylindrical post 7401.
  • FIG. A digital signage 7400 has a display section 7000 provided along the curved surface of a pillar 7401 .
  • the display device of one embodiment of the present invention can be applied to the display portion 7000 in FIGS. 28E and 28F.
  • light emitted from the light-emitting portion is extracted through the lens, so that light extraction efficiency is high and an extremely bright image can be displayed.
  • the display portion 7000 As the display portion 7000 is wider, the amount of information that can be provided at one time can be increased. In addition, the wider the display unit 7000, the more conspicuous it is, and the more effective the advertisement can be, for example.
  • the touch panel can be formed using a light-receiving device included in the display device of one embodiment of the present invention.
  • a light-receiving device included in the display device of one embodiment of the present invention detects light through a lens and has high photosensitivity. Therefore, a touch panel having high sensitivity and excellent ability to detect a touch position can be provided.
  • the digital signage 7300 or digital signage 7400 is preferably capable of cooperating with an information terminal 7311 or 7411 such as a smartphone possessed by the user through wireless communication.
  • advertisement information displayed on the display unit 7000 can be displayed on the screen of the information terminal 7311 or the information terminal 7411 .
  • display on the display portion 7000 can be switched.
  • the digital signage 7300 or the digital signage 7400 can execute a game using the screen of the information terminal 7311 or 7411 as an operation means (controller). This allows an unspecified number of users to simultaneously participate in and enjoy the game.
  • the electronic device shown in FIGS. 29A to 29G includes a housing 9000, a display unit 9001, a speaker 9003, operation keys 9005 (including a power switch or an operation switch), connection terminals 9006, sensors 9007 (force, displacement, position, speed , acceleration, angular velocity, number of rotations, distance, light, liquid, magnetism, temperature, chemical substances, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, smell, or infrared rays function), a microphone 9008, and the like.
  • the electronic devices shown in FIGS. 29A to 29G have various functions. For example, a function to display various information (still images, moving images, text images, etc.) on the display unit, a touch panel function, a calendar, a function to display the date or time, a function to control processing by various software (programs), It can have a wireless communication function, a function of reading and processing programs or data recorded on a recording medium, and the like. Note that the functions of the electronic device are not limited to these, and can have various functions.
  • the electronic device may have a plurality of display units.
  • the electronic device is equipped with a camera, etc., and has the function of capturing still images or moving images and storing them in a recording medium (external or built into the camera), or the function of displaying the captured image on the display unit, etc. good.
  • the display device of one embodiment of the present invention can be applied to these electronic devices.
  • light emitted from the light-emitting portion is extracted through the lens, so that light extraction efficiency is high and an extremely bright image can be displayed.
  • These electronic devices can also have the functionality of touch sensor panels.
  • a light-receiving device included in the display device of one embodiment of the present invention can also function as the touch-sensor panel.
  • a light-receiving device included in the display device of one embodiment of the present invention detects light through a lens, has high photosensitivity, and is excellent in detecting a touch position. Also, the light receiving device can acquire an image for fingerprint authentication.
  • FIG. 29A is a perspective view showing a mobile information terminal 9101.
  • the mobile information terminal 9101 can be used as, for example, a smart phone.
  • the portable information terminal 9101 may be provided with a speaker 9003, a connection terminal 9006, a sensor 9007, and the like.
  • the mobile information terminal 9101 can display text and image information on its multiple surfaces.
  • FIG. 28A shows an example in which three icons 9050 are displayed.
  • Information 9051 indicated by a dashed rectangle can also be displayed on another surface of the display portion 9001 . Examples of the information 9051 include notification of incoming e-mail, SNS, telephone call, title of e-mail or SNS, sender name, date and time, remaining battery power, radio wave intensity, and the like.
  • an icon 9050 or the like may be displayed at the position where the information 9051 is displayed.
  • FIG. 29B is a perspective view showing a mobile information terminal 9102.
  • the portable information terminal 9102 has a function of displaying information on three or more sides of the display portion 9001 .
  • information 9052, information 9053, and information 9054 are displayed on different surfaces.
  • the user can also check the information 9053 displayed at a position where the mobile information terminal 9102 can be observed from above the mobile information terminal 9102 while the mobile information terminal 9102 is stored in the chest pocket of the clothes.
  • the user can check the display without taking out the portable information terminal 9102 from the pocket and determine whether or not to receive the call.
  • FIG. 29C is a perspective view showing the tablet terminal 9103.
  • the tablet terminal 9103 can execute various applications such as mobile phone, e-mail, reading and creating text, playing music, Internet communication, and computer games.
  • the tablet terminal 9103 has a display portion 9001, a camera 9002, a microphone 9008, and a speaker 9003 on the front of the housing 9000, operation keys 9005 as operation buttons on the left side of the housing 9000, and connection terminals on the bottom. 9006.
  • FIG. 29D is a perspective view showing a wristwatch-type personal digital assistant 9200.
  • the mobile information terminal 9200 can be used as a smart watch (registered trademark), for example.
  • the display portion 9001 has a curved display surface, and display can be performed along the curved display surface.
  • the mobile information terminal 9200 can make hands-free calls by mutual communication with a headset capable of wireless communication.
  • the portable information terminal 9200 can perform mutual data transmission and charging with another information terminal through the connection terminal 9006 . Note that the charging operation may be performed by wireless power supply.
  • FIGS. 29E-29G are perspective views showing a foldable personal digital assistant 9201.
  • FIG. 29E is a state in which the portable information terminal 9201 is unfolded
  • FIG. 29G is a state in which it is folded
  • FIG. 29F is a perspective view in the middle of changing from one of FIGS. 29E and 29G to the other.
  • the portable information terminal 9201 has excellent portability in the folded state, and has excellent display visibility due to a seamless wide display area in the unfolded state.
  • a display portion 9001 included in the portable information terminal 9201 is supported by three housings 9000 connected by hinges 9055 .
  • the display portion 9001 can be bent with a curvature radius of 0.1 mm or more and 150 mm or less.

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Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010080224A (ja) * 2008-09-25 2010-04-08 Sony Corp 光学部品の製造方法および光学部品、並びに表示装置の製造方法および表示装置
JP2013003588A (ja) * 2011-06-15 2013-01-07 Samsung Display Co Ltd 液晶レンズ及び表示装置
JP2016024414A (ja) * 2014-07-24 2016-02-08 セイコーエプソン株式会社 マイクロレンズアレイ基板、電気光学装置、および電子機器
US20180190193A1 (en) * 2016-12-30 2018-07-05 Lg Display Co., Ltd. Organic light-emitting device and organic light-emitting display device using the same
JP2019208027A (ja) * 2018-05-29 2019-12-05 エルジー ディスプレイ カンパニー リミテッド 表示装置
WO2021002791A1 (en) * 2019-07-03 2021-01-07 Fingerprint Cards Ab Sensor displacement compensation in an optical biometric imaging arrangment under a display
JP2021012366A (ja) * 2019-07-05 2021-02-04 株式会社半導体エネルギー研究所 表示装置、表示モジュール、及び電子機器
JP2021039342A (ja) * 2019-08-29 2021-03-11 株式会社半導体エネルギー研究所 表示装置、表示モジュール、及び電子機器
WO2021074738A1 (ja) * 2019-10-17 2021-04-22 株式会社半導体エネルギー研究所 表示装置、表示モジュール、及び電子機器

Family Cites Families (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5953985A (en) 1996-01-18 1999-09-21 Tohoku Ricoh Co., Ltd. Stencil printer
JP2000036385A (ja) 1998-07-21 2000-02-02 Sony Corp 有機ｅｌディスプレイの製造方法
JP2000113982A (ja) 1998-10-08 2000-04-21 Sony Corp 有機ｅｌディスプレイの製造方法
US6617186B2 (en) 2000-09-25 2003-09-09 Dai Nippon Printing Co., Ltd. Method for producing electroluminescent element
JP4578032B2 (ja) 2001-08-22 2010-11-10 大日本印刷株式会社 エレクトロルミネッセント素子の製造方法
JP2008098106A (ja) 2006-10-16 2008-04-24 Dainippon Printing Co Ltd 有機エレクトロルミネッセンス素子の製造方法
JP2008147072A (ja) 2006-12-12 2008-06-26 Dainippon Printing Co Ltd 有機エレクトロルミネッセンス素子の製造方法
JP2008251270A (ja) 2007-03-29 2008-10-16 Dainippon Printing Co Ltd 有機エレクトロルミネッセンス素子およびその製造方法
US20080238297A1 (en) 2007-03-29 2008-10-02 Masuyuki Oota Organic el display and method of manufacturing the same
JP5384751B2 (ja) 2010-12-27 2014-01-08 シャープ株式会社 蒸着膜の形成方法及び表示装置の製造方法
WO2012090771A1 (ja) 2010-12-27 2012-07-05 シャープ株式会社 蒸着膜の形成方法及び表示装置の製造方法
US8809879B2 (en) 2011-04-07 2014-08-19 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device and a method of manufacturing light-emitting device
KR101920374B1 (ko) 2011-04-27 2018-11-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 장치 및 그 제작 방법
JP6016407B2 (ja) 2011-04-28 2016-10-26 キヤノン株式会社 有機ｅｌ表示装置の製造方法
JP2013077494A (ja) 2011-09-30 2013-04-25 Canon Inc 発光装置の製造方法
JP2013084576A (ja) 2011-09-30 2013-05-09 Canon Inc 有機ｅｌ表示装置の製造方法
JP6080438B2 (ja) 2011-09-30 2017-02-15 キヤノン株式会社 有機ｅｌ装置の製造方法
US8999738B2 (en) 2012-06-29 2015-04-07 Canon Kabushiki Kaisha Method for manufacturing organic electroluminescent display apparatus
JP2014011084A (ja) 2012-06-29 2014-01-20 Canon Inc 有機ｅｌ装置の製造方法
JP2014120218A (ja) 2012-12-13 2014-06-30 Canon Inc 有機ｅｌ表示装置の製造方法
JP2014135251A (ja) 2013-01-11 2014-07-24 Canon Inc 有機ｅｌ表示装置の製造方法
JP2014232568A (ja) 2013-05-28 2014-12-11 キヤノン株式会社 有機ｅｌ装置
JP6234585B2 (ja) 2013-08-29 2017-11-22 富士フイルム株式会社 有機層をリソグラフィでパターニングするための方法
JP6242121B2 (ja) 2013-09-02 2017-12-06 株式会社ジャパンディスプレイ 発光素子表示装置及び発光素子表示装置の製造方法
JP6282428B2 (ja) 2013-09-09 2018-02-21 株式会社ジャパンディスプレイ 有機エレクトロルミネッセンス表示装置及びその製造方法
JP6114670B2 (ja) 2013-09-19 2017-04-12 株式会社ジャパンディスプレイ 有機エレクトロルミネッセンス表示装置及び有機エレクトロルミネッセンス表示装置の製造方法
JP2015115178A (ja) 2013-12-11 2015-06-22 株式会社ジャパンディスプレイ 有機ｅｌ表示装置及び有機ｅｌ表示装置の製造方法
CN110459677B (zh) 2014-08-01 2022-11-22 正交公司 有机电子装置的光刻法图案化
JP2016197494A (ja) 2015-04-02 2016-11-24 株式会社ジャパンディスプレイ 有機ｅｌ表示装置
JP6577224B2 (ja) 2015-04-23 2019-09-18 株式会社ジャパンディスプレイ 表示装置
US10862036B2 (en) 2015-06-29 2020-12-08 Imec Vzw Method for high resolution patterning of organic layers
JP2017091946A (ja) 2015-11-16 2017-05-25 株式会社ジャパンディスプレイ 表示装置および表示装置の製造方法
KR20190076045A (ko) 2016-11-10 2019-07-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치 및 표시 장치의 구동 방법
JP2019179696A (ja) 2018-03-30 2019-10-17 株式会社ジャパンディスプレイ 有機ｅｌ表示装置および有機ｅｌ表示装置の製造方法
FR3091035B1 (fr) 2018-12-19 2020-12-04 Commissariat Energie Atomique PROCEDE DE FABRICATION D’UN PIXEL D’UN MICRO-ECRAN A OLEDs
JP7450333B2 (ja) 2018-12-21 2024-03-15 Jsr株式会社 感放射線性樹脂組成物、及びマイクロレンズの形成方法
JP2020160305A (ja) 2019-03-27 2020-10-01 株式会社ジャパンディスプレイ フレキシブルパネル装置
US11288486B2 (en) * 2019-06-12 2022-03-29 Lms Co., Ltd. Fingerprint recognition optical film, and backlight unit and liquid crystal display device comprising the film optical
US20210360154A1 (en) * 2020-05-14 2021-11-18 David Elliott Slobodin Display and image-capture device
CN113780035B (zh) * 2020-06-09 2024-09-13 京东方科技集团股份有限公司 显示面板和显示装置

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010080224A (ja) * 2008-09-25 2010-04-08 Sony Corp 光学部品の製造方法および光学部品、並びに表示装置の製造方法および表示装置
JP2013003588A (ja) * 2011-06-15 2013-01-07 Samsung Display Co Ltd 液晶レンズ及び表示装置
JP2016024414A (ja) * 2014-07-24 2016-02-08 セイコーエプソン株式会社 マイクロレンズアレイ基板、電気光学装置、および電子機器
US20180190193A1 (en) * 2016-12-30 2018-07-05 Lg Display Co., Ltd. Organic light-emitting device and organic light-emitting display device using the same
JP2019208027A (ja) * 2018-05-29 2019-12-05 エルジー ディスプレイ カンパニー リミテッド 表示装置
WO2021002791A1 (en) * 2019-07-03 2021-01-07 Fingerprint Cards Ab Sensor displacement compensation in an optical biometric imaging arrangment under a display
JP2021012366A (ja) * 2019-07-05 2021-02-04 株式会社半導体エネルギー研究所 表示装置、表示モジュール、及び電子機器
JP2021039342A (ja) * 2019-08-29 2021-03-11 株式会社半導体エネルギー研究所 表示装置、表示モジュール、及び電子機器
WO2021074738A1 (ja) * 2019-10-17 2021-04-22 株式会社半導体エネルギー研究所 表示装置、表示モジュール、及び電子機器

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