WO2023026908A1 - 基板支持器及び基板処理装置 - Google Patents

基板支持器及び基板処理装置 Download PDF

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Publication number
WO2023026908A1
WO2023026908A1 PCT/JP2022/031012 JP2022031012W WO2023026908A1 WO 2023026908 A1 WO2023026908 A1 WO 2023026908A1 JP 2022031012 W JP2022031012 W JP 2022031012W WO 2023026908 A1 WO2023026908 A1 WO 2023026908A1
Authority
WO
WIPO (PCT)
Prior art keywords
electrode
substrate
heat transfer
plasma processing
transfer gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2022/031012
Other languages
English (en)
French (fr)
Japanese (ja)
Inventor
誠人 加藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP2023543832A priority Critical patent/JPWO2023026908A1/ja
Priority to CN202280056172.3A priority patent/CN117916862A/zh
Priority to KR1020247008584A priority patent/KR20240046246A/ko
Publication of WO2023026908A1 publication Critical patent/WO2023026908A1/ja
Priority to US18/586,860 priority patent/US20240194514A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H01J37/32165—Plural frequencies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H10P72/722—Details of electrostatic chucks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7624—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/2007—Holding mechanisms

Definitions

  • substrate a semiconductor substrate supported by a substrate support in a chamber.
  • plasma processes it is important to appropriately control the temperature of the substrate during processing in order to obtain processing results with high in-plane uniformity on the substrate to be processed.
  • Ring assembly 120 includes one or more annular members.
  • the one or more annular members include one or more edge rings. again.
  • the one or more annular members may include at least one cover ring.
  • the edge ring is made of a conductive material or an insulating material, and the cover ring is made of an insulating material.
  • Ring assembly 120 may be positioned over annular electrostatic chuck 113 or may be positioned over both electrostatic chuck 112 and annular electrostatic chuck 113 .
  • the impedance of the substrate W is determined by the reciprocal of the capacitance [Cw].
  • the parasitic capacitance Cw of the substrate W can depend on the thickness of the dielectric member (ceramic member 112a) through which the high frequency power is transmitted, ie the distance between the conductive base 111 and the substrate W, for example.
  • the impedance of the ring assembly 120 is determined by the reciprocal of the capacitance [Cf ⁇ A1/A2].
  • the parasitic capacitance Cf (see FIG. 5) of the ring assembly 120 depends on, for example, the thickness of the dielectric member (ceramic member 113a) through which high frequency power is transmitted, that is, the distance between the conductive base 111 and the ring assembly 120. obtain.

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Chemical Vapour Deposition (AREA)
PCT/JP2022/031012 2021-08-27 2022-08-17 基板支持器及び基板処理装置 Ceased WO2023026908A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2023543832A JPWO2023026908A1 (https=) 2021-08-27 2022-08-17
CN202280056172.3A CN117916862A (zh) 2021-08-27 2022-08-17 基片支承器和基片处理装置
KR1020247008584A KR20240046246A (ko) 2021-08-27 2022-08-17 기판 지지기 및 기판 처리 장치
US18/586,860 US20240194514A1 (en) 2021-08-27 2024-02-26 Substrate support and substrate processing apparatus

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US202163237813P 2021-08-27 2021-08-27
US63/237,813 2021-08-27
JP2022021526 2022-02-15
JP2022-021526 2022-10-05

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US18/586,860 Continuation US20240194514A1 (en) 2021-08-27 2024-02-26 Substrate support and substrate processing apparatus

Publications (1)

Publication Number Publication Date
WO2023026908A1 true WO2023026908A1 (ja) 2023-03-02

Family

ID=85321990

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2022/031012 Ceased WO2023026908A1 (ja) 2021-08-27 2022-08-17 基板支持器及び基板処理装置

Country Status (5)

Country Link
US (1) US20240194514A1 (https=)
JP (1) JPWO2023026908A1 (https=)
KR (1) KR20240046246A (https=)
TW (1) TW202329192A (https=)
WO (1) WO2023026908A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2024252740A1 (ja) * 2023-06-05 2024-12-12 東京エレクトロン株式会社 プラズマ処理装置

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002080962A (ja) * 2000-09-07 2002-03-22 Ulvac Japan Ltd スパッタリング装置及び薄膜製造方法
JP2004158751A (ja) * 2002-11-08 2004-06-03 Matsushita Electric Ind Co Ltd プラズマ処理装置
JP2011009351A (ja) * 2009-06-24 2011-01-13 Hitachi High-Technologies Corp プラズマ処理装置およびプラズマ処理方法
JP2014150186A (ja) * 2013-02-01 2014-08-21 Hitachi High-Technologies Corp プラズマ処理装置
JP2016127170A (ja) * 2015-01-06 2016-07-11 東京エレクトロン株式会社 載置台及び基板処理装置
JP2021064750A (ja) * 2019-10-17 2021-04-22 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2021141277A (ja) 2020-03-09 2021-09-16 東京エレクトロン株式会社 載置台及びプラズマ処理装置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002080962A (ja) * 2000-09-07 2002-03-22 Ulvac Japan Ltd スパッタリング装置及び薄膜製造方法
JP2004158751A (ja) * 2002-11-08 2004-06-03 Matsushita Electric Ind Co Ltd プラズマ処理装置
JP2011009351A (ja) * 2009-06-24 2011-01-13 Hitachi High-Technologies Corp プラズマ処理装置およびプラズマ処理方法
JP2014150186A (ja) * 2013-02-01 2014-08-21 Hitachi High-Technologies Corp プラズマ処理装置
JP2016127170A (ja) * 2015-01-06 2016-07-11 東京エレクトロン株式会社 載置台及び基板処理装置
JP2021064750A (ja) * 2019-10-17 2021-04-22 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2024252740A1 (ja) * 2023-06-05 2024-12-12 東京エレクトロン株式会社 プラズマ処理装置

Also Published As

Publication number Publication date
JPWO2023026908A1 (https=) 2023-03-02
US20240194514A1 (en) 2024-06-13
TW202329192A (zh) 2023-07-16
KR20240046246A (ko) 2024-04-08

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