TW202329192A - 基板支持器及電漿處理裝置 - Google Patents

基板支持器及電漿處理裝置 Download PDF

Info

Publication number
TW202329192A
TW202329192A TW111130862A TW111130862A TW202329192A TW 202329192 A TW202329192 A TW 202329192A TW 111130862 A TW111130862 A TW 111130862A TW 111130862 A TW111130862 A TW 111130862A TW 202329192 A TW202329192 A TW 202329192A
Authority
TW
Taiwan
Prior art keywords
electrode
substrate
heat transfer
dielectric body
transfer gas
Prior art date
Application number
TW111130862A
Other languages
English (en)
Chinese (zh)
Inventor
加藤誠人
Original Assignee
日商東京威力科創股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商東京威力科創股份有限公司 filed Critical 日商東京威力科創股份有限公司
Publication of TW202329192A publication Critical patent/TW202329192A/zh

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H10P72/722—Details of electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H01J37/32165—Plural frequencies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7624—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/2007—Holding mechanisms

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Chemical Vapour Deposition (AREA)
TW111130862A 2021-08-27 2022-08-17 基板支持器及電漿處理裝置 TW202329192A (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US202163237813P 2021-08-27 2021-08-27
US63/237,813 2021-08-27
JP2022021526 2022-02-15
JP2022-021526 2022-10-05

Publications (1)

Publication Number Publication Date
TW202329192A true TW202329192A (zh) 2023-07-16

Family

ID=85321990

Family Applications (1)

Application Number Title Priority Date Filing Date
TW111130862A TW202329192A (zh) 2021-08-27 2022-08-17 基板支持器及電漿處理裝置

Country Status (5)

Country Link
US (1) US20240194514A1 (https=)
JP (1) JPWO2023026908A1 (https=)
KR (1) KR20240046246A (https=)
TW (1) TW202329192A (https=)
WO (1) WO2023026908A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2024252740A1 (ja) * 2023-06-05 2024-12-12 東京エレクトロン株式会社 プラズマ処理装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4703828B2 (ja) * 2000-09-07 2011-06-15 株式会社アルバック スパッタリング装置及び薄膜製造方法
JP2004158751A (ja) * 2002-11-08 2004-06-03 Matsushita Electric Ind Co Ltd プラズマ処理装置
JP5357639B2 (ja) * 2009-06-24 2013-12-04 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法
JP6165452B2 (ja) * 2013-02-01 2017-07-19 株式会社日立ハイテクノロジーズ プラズマ処理装置
JP6452449B2 (ja) * 2015-01-06 2019-01-16 東京エレクトロン株式会社 載置台及び基板処理装置
JP7325294B2 (ja) * 2019-10-17 2023-08-14 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
JP2021141277A (ja) 2020-03-09 2021-09-16 東京エレクトロン株式会社 載置台及びプラズマ処理装置

Also Published As

Publication number Publication date
JPWO2023026908A1 (https=) 2023-03-02
WO2023026908A1 (ja) 2023-03-02
US20240194514A1 (en) 2024-06-13
KR20240046246A (ko) 2024-04-08

Similar Documents

Publication Publication Date Title
JP2019021803A (ja) プラズマ処理装置
TW202349431A (zh) 以靜電方式夾持的邊緣環
US20240186917A1 (en) Electrostatic chuck, substrate support, and substrate processing apparatus
JP7145042B2 (ja) 基板支持器及びプラズマ処理装置
JP5602282B2 (ja) プラズマ処理装置およびフォーカスリングとフォーカスリング部品
JP2023044379A (ja) プラズマ処理装置
US20240194514A1 (en) Substrate support and substrate processing apparatus
JP2022178176A (ja) 基板支持器、プラズマ処理装置、及びプラズマ処理方法
CN117916862A (zh) 基片支承器和基片处理装置
US20250014874A1 (en) Electrostatic chuck and plasma processing apparatus
KR102204192B1 (ko) 진폭 변조를 통한 이온 에너지 부스팅을 허용하는 플라즈마 프로세싱 챔버들에 대한 이온 에너지 분배 조작을 위한 방법 및 장치
US20250132129A1 (en) Frequency control of source radio frequency power in plasma processing
TW202503829A (zh) 電漿處理裝置
CN120642580A (zh) 等离子体处理装置
CN117678062A (zh) 基片支承器和基片处理装置
US20250246416A1 (en) Substrate support and plasma processing apparatus
KR20230115898A (ko) 에칭 방법 및 플라즈마 처리 장치
CN117795657A (zh) 静电卡盘、基片支承器和基片处理装置
TWI920462B (zh) 電漿處理裝置、電源系統及頻率控制方法
US20240339303A1 (en) Substrate support and plasma processing apparatus
JP2024008781A (ja) 基板支持部及び基板処理装置
US20240162075A1 (en) Substrate support and substrate processing device
TW202431524A (zh) 基板處理裝置及靜電吸盤
JP2024027431A (ja) プラズマ処理装置及び基板支持部
KR20250134622A (ko) 지지체, 기판 지지기 및 플라즈마 처리 장치