KR20240046246A - 기판 지지기 및 기판 처리 장치 - Google Patents

기판 지지기 및 기판 처리 장치 Download PDF

Info

Publication number
KR20240046246A
KR20240046246A KR1020247008584A KR20247008584A KR20240046246A KR 20240046246 A KR20240046246 A KR 20240046246A KR 1020247008584 A KR1020247008584 A KR 1020247008584A KR 20247008584 A KR20247008584 A KR 20247008584A KR 20240046246 A KR20240046246 A KR 20240046246A
Authority
KR
South Korea
Prior art keywords
electrode
substrate
heat transfer
plasma processing
transfer gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
KR1020247008584A
Other languages
English (en)
Korean (ko)
Inventor
마코토 가토
Original Assignee
도쿄엘렉트론가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 도쿄엘렉트론가부시키가이샤 filed Critical 도쿄엘렉트론가부시키가이샤
Publication of KR20240046246A publication Critical patent/KR20240046246A/ko
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H10P72/722—Details of electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H01J37/32165—Plural frequencies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H01L21/6831—
    • H01L21/68785—
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7624—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/2007—Holding mechanisms

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Chemical Vapour Deposition (AREA)
KR1020247008584A 2021-08-27 2022-08-17 기판 지지기 및 기판 처리 장치 Pending KR20240046246A (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US202163237813P 2021-08-27 2021-08-27
US63/237,813 2021-08-27
JP2022021526 2022-02-15
JPJP-P-2022-021526 2022-02-15
PCT/JP2022/031012 WO2023026908A1 (ja) 2021-08-27 2022-08-17 基板支持器及び基板処理装置

Publications (1)

Publication Number Publication Date
KR20240046246A true KR20240046246A (ko) 2024-04-08

Family

ID=85321990

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020247008584A Pending KR20240046246A (ko) 2021-08-27 2022-08-17 기판 지지기 및 기판 처리 장치

Country Status (5)

Country Link
US (1) US20240194514A1 (https=)
JP (1) JPWO2023026908A1 (https=)
KR (1) KR20240046246A (https=)
TW (1) TW202329192A (https=)
WO (1) WO2023026908A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2024252740A1 (ja) * 2023-06-05 2024-12-12 東京エレクトロン株式会社 プラズマ処理装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2021141277A (ja) 2020-03-09 2021-09-16 東京エレクトロン株式会社 載置台及びプラズマ処理装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4703828B2 (ja) * 2000-09-07 2011-06-15 株式会社アルバック スパッタリング装置及び薄膜製造方法
JP2004158751A (ja) * 2002-11-08 2004-06-03 Matsushita Electric Ind Co Ltd プラズマ処理装置
JP5357639B2 (ja) * 2009-06-24 2013-12-04 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法
JP6165452B2 (ja) * 2013-02-01 2017-07-19 株式会社日立ハイテクノロジーズ プラズマ処理装置
JP6452449B2 (ja) * 2015-01-06 2019-01-16 東京エレクトロン株式会社 載置台及び基板処理装置
JP7325294B2 (ja) * 2019-10-17 2023-08-14 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2021141277A (ja) 2020-03-09 2021-09-16 東京エレクトロン株式会社 載置台及びプラズマ処理装置

Also Published As

Publication number Publication date
JPWO2023026908A1 (https=) 2023-03-02
WO2023026908A1 (ja) 2023-03-02
US20240194514A1 (en) 2024-06-13
TW202329192A (zh) 2023-07-16

Similar Documents

Publication Publication Date Title
JP2019021803A (ja) プラズマ処理装置
US20240186917A1 (en) Electrostatic chuck, substrate support, and substrate processing apparatus
JP2023044379A (ja) プラズマ処理装置
KR20240046246A (ko) 기판 지지기 및 기판 처리 장치
JP2022178176A (ja) 基板支持器、プラズマ処理装置、及びプラズマ処理方法
US20250014874A1 (en) Electrostatic chuck and plasma processing apparatus
CN117916862A (zh) 基片支承器和基片处理装置
JP2026012789A (ja) プラズマ処理装置
US20250132129A1 (en) Frequency control of source radio frequency power in plasma processing
KR102204192B1 (ko) 진폭 변조를 통한 이온 에너지 부스팅을 허용하는 플라즈마 프로세싱 챔버들에 대한 이온 에너지 분배 조작을 위한 방법 및 장치
KR20230115898A (ko) 에칭 방법 및 플라즈마 처리 장치
CN120642034A (zh) 等离子体处理装置
KR20230115905A (ko) 에칭 방법 및 플라즈마 처리 장치
US20250246416A1 (en) Substrate support and plasma processing apparatus
CN117678062A (zh) 基片支承器和基片处理装置
CN117795657A (zh) 静电卡盘、基片支承器和基片处理装置
US20240162075A1 (en) Substrate support and substrate processing device
TWI920462B (zh) 電漿處理裝置、電源系統及頻率控制方法
US20240339303A1 (en) Substrate support and plasma processing apparatus
TW202431524A (zh) 基板處理裝置及靜電吸盤
JP2024008781A (ja) 基板支持部及び基板処理装置
JP2024094874A (ja) プラズマ処理装置
JP2024027431A (ja) プラズマ処理装置及び基板支持部
JP2024115405A (ja) プラズマ処理装置

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

D13 Search requested

Free format text: ST27 STATUS EVENT CODE: A-1-2-D10-D13-SRH-X000 (AS PROVIDED BY THE NATIONAL OFFICE)

D13-X000 Search requested

St.27 status event code: A-1-2-D10-D13-srh-X000

D21 Rejection of application intended

Free format text: ST27 STATUS EVENT CODE: A-1-2-D10-D21-EXM-PE0902 (AS PROVIDED BY THE NATIONAL OFFICE)

PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000

P11 Amendment of application requested

Free format text: ST27 STATUS EVENT CODE: A-2-2-P10-P11-NAP-X000 (AS PROVIDED BY THE NATIONAL OFFICE)

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000