WO2023003210A1 - 표시장치 - Google Patents

표시장치 Download PDF

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Publication number
WO2023003210A1
WO2023003210A1 PCT/KR2022/009496 KR2022009496W WO2023003210A1 WO 2023003210 A1 WO2023003210 A1 WO 2023003210A1 KR 2022009496 W KR2022009496 W KR 2022009496W WO 2023003210 A1 WO2023003210 A1 WO 2023003210A1
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WIPO (PCT)
Prior art keywords
region
transistor
transistors
width
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/KR2022/009496
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English (en)
French (fr)
Korean (ko)
Inventor
김근우
강태욱
김장현
배준우
이재섭
진동규
최상건
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Samsung Display Co Ltd
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Samsung Display Co Ltd
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Application filed by Samsung Display Co Ltd filed Critical Samsung Display Co Ltd
Priority to JP2024500393A priority Critical patent/JP2024527731A/ja
Priority to EP22846082.0A priority patent/EP4376080A4/en
Publication of WO2023003210A1 publication Critical patent/WO2023003210A1/ko
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H10D30/6715—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes characterised by the doping profiles, e.g. having lightly-doped source or drain extensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1216—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals

Definitions

  • the present invention relates to a display device, and relates to a display device having a transistor with improved operating characteristics.
  • the display device includes a plurality of pixels and a driving circuit (eg, a scan driving circuit and a data driving circuit) that control the plurality of pixels.
  • a driving circuit eg, a scan driving circuit and a data driving circuit
  • Each of the plurality of pixels includes a display element and a pixel driving circuit that controls the display element.
  • a driving circuit of a pixel may include a plurality of organically connected transistors.
  • the scan driving circuit and/or the data driving circuit may be formed through the same process as the plurality of pixels.
  • the scan driving circuit and/or the data driving circuit may include a plurality of organically connected transistors.
  • An object of the present invention is to provide a display device with improved display quality.
  • a display device includes a first transistor, a second transistor electrically connected to the first transistor, and outputting a data signal to the first transistor, and electrically connected to a gate of the first transistor. and n (where n is a natural number equal to or greater than 2) third transistors connected in series with each other, a capacitor charging a voltage corresponding to the data signal, and a light emitting element electrically connected to the first transistor.
  • Each of the n third transistors may include a channel region, a semiconductor region including a source region and a drain region disposed with the channel region interposed therebetween in an extension direction, and a gate overlapping the channel region.
  • a region more adjacent to the gate of the first transistor among the source region or the drain region of the third transistor closest to the gate of the first transistor is a first region and the first region. and a second region between the channel region.
  • the second region may have a lower doping concentration than the first region, and a width of the second region may be smaller than that of the first region in a reference direction orthogonal to the extension direction.
  • a region farther from the gate of the first transistor among the source region or the drain region of the third transistor disposed farthest from the gate of the first transistor is a third region and A fourth region between the third region and the channel region may be included.
  • the fourth region may have a lower doping concentration than the third region, and a width of the fourth region may be smaller than that of the third region in the reference direction.
  • a region farther from the gate of the first transistor among the source region or the drain region of the third transistor closest to the gate of the first transistor is the third region and the third transistor.
  • a fourth region between region 3 and the channel region may be included.
  • the fourth region may have a lower doping concentration than the third region.
  • the third area and the fourth area may have substantially the same width.
  • a width of the second region in the reference direction may be 1 ⁇ m to 2 ⁇ m.
  • a width of the second region may be 10% to 50% smaller than a width of the first region.
  • a length of the second region in the extending direction may be 0.1 ⁇ m to 0.5 ⁇ m.
  • the first transistor and the n third transistors include P-type polysilicon transistors, and the n third transistors are in series between the gate of the first transistor and a source or drain of the first transistor. can be connected
  • the source region of the third transistor closest to the gate of the first transistor and the drain region of the third transistor furthest from the gate of the first transistor may have substantially the same width in the reference direction.
  • the drain region of a third transistor disposed between the third transistor closest to the gate of the first transistor among the n third transistors and the third transistor disposed farthest from the gate of the first transistor and the source area may have substantially the same width in the reference direction.
  • the first transistor includes a semiconductor region including a channel region overlapping the gate of the first transistor, and a source region and a drain region disposed with the channel region interposed therebetween, and the source region or A width of at least one of the drain regions of the first transistor may be greater than a width of the channel region of the first transistor.
  • a width of at least one of the source region of the first transistor and the drain region of the first transistor may be 5% to 20% greater than a width of the channel region of the first transistor.
  • Each of the source region of the first transistor and the drain region of the first transistor includes a third region and a fourth region between the third region and the channel region, the fourth region comprising the third region.
  • the doping concentration may be lower than that of the fourth region, and the width of the third region may be substantially the same as that of the fourth region.
  • a width of the source region or the drain region of the first transistor may be greater than a width of the semiconductor region of each of the n third transistors.
  • Each of the first transistor and the n third transistors may include P-type polysilicon transistors, and the n third transistors may be connected between the gate of the first transistor and a voltage line receiving an initialization voltage.
  • the capacitor may be electrically connected between the gate of the first transistor and a voltage line receiving a power voltage.
  • a display device includes a first transistor, a second transistor electrically connected to the first transistor, and outputting a data signal to the first transistor, and electrically connected to a gate of the first transistor. and n (where n is a natural number equal to or greater than 2) third transistors connected in series with each other, a capacitor charging a voltage corresponding to the data signal, and a light emitting element electrically connected to the first transistor.
  • Each of the n third transistors may include a channel region, a semiconductor region including a source region and a drain region disposed with the channel region interposed therebetween in an extension direction, and a gate overlapping the channel region.
  • a region farther from the gate of the first transistor among the source region or the drain region of the third transistor disposed farthest from the gate of the first transistor is a first region and A second region between the first region and the channel region may be included.
  • the second region may have a lower doping concentration than the first region, and a width of the second region may be smaller than that of the first region in a reference direction orthogonal to the extension direction.
  • a display device includes a first transistor, a second transistor electrically connected to the first transistor, and outputting a data signal to the first transistor, and electrically connected to a gate of the first transistor.
  • a third transistor and a light emitting element electrically connected to the first transistor may be included.
  • the third transistor may include a channel region, a semiconductor region including a drain region and a source region disposed with the channel region interposed therebetween in an extension direction, and a gate overlapping the channel region.
  • At least one of the drain region and the source region may include a first region and a second region between the first region and the channel region.
  • the second region may have a lower doping concentration than the first region, and a width of the second region may be smaller than that of the first region in a reference direction orthogonal to the extension direction.
  • a display device includes a first transistor, a second transistor electrically connected to the first transistor, and outputting a data signal to the first transistor, and electrically connected to a gate of the first transistor. and n (where n is a natural number equal to or greater than 1) third transistors connected in series with each other, and a light emitting element electrically connected to the first transistors.
  • Each of the first, second, and third transistors may include a channel region, a semiconductor region including a source region and a drain region interposed therebetween, and a gate overlapping the channel region.
  • Each of the drain region and the small region includes a first region and a second region between the first region and the channel region, the second region has a lower doping concentration than the first region, and A width of each of the source region and the drain region of the first transistor may be greater than that of the channel region of the first transistor.
  • a width of the drain region of the first transistor may be 5% to 20% greater than a width of the channel region of the first transistor.
  • a width of the second region of the source region of the first transistor and a width of the second region of the drain region of the first transistor may be substantially the same.
  • a width of the drain region of the first transistor may be greater than a width of the drain region of the n third transistors.
  • a width of at least one of the source region of the n third transistors and the drain region of the n third transistors may be substantially the same as a width of the channel region of the n third transistors.
  • Leakage current of the transistors is reduced by reducing the drain field of the transistors connected to the gate of the driving transistor.
  • the driving transistor may provide current corresponding to the data voltage to the light emitting device.
  • a decrease in driving current of the driving transistor may be prevented by increasing the width of the low-doped region of the driving transistor.
  • FIG. 1 is a block diagram of a display device according to an exemplary embodiment of the present invention.
  • FIG. 2 is an equivalent circuit diagram of a pixel according to an embodiment of the present invention.
  • FIG. 3 is a waveform diagram of driving signals for driving the pixel shown in FIG. 2 .
  • FIG. 4 is a cross-sectional view of a display panel corresponding to a pixel according to an exemplary embodiment of the present invention.
  • 5A is a plan view of a pixel according to an exemplary embodiment of the present invention.
  • 5B to 5G are plan views according to the stacking order of patterns included in pixels according to an embodiment of the present invention.
  • 6A is a plan view of third transistors according to an embodiment of the present invention.
  • 6B and 6C are cross-sectional views of third transistors corresponding to line II′ of FIG. 6A.
  • 6D is a voltage-current graph of a transistor according to a comparative example and a transistor according to an embodiment of the present invention.
  • 6E is a cross-sectional view illustrating a doping process of a transistor.
  • 6F is a circuit diagram illustrating operations of the first and third transistors in an emission period corresponding to a high grayscale data signal.
  • 6G is a circuit diagram illustrating operations of the first transistor and the third transistor in an emission period corresponding to a data signal of a halftone grayscale.
  • FIG. 7A is a circuit diagram of third transistors according to an embodiment of the present invention.
  • 7B is a plan view of third transistors according to an embodiment of the present invention.
  • 7C is a circuit diagram of a third transistor according to an embodiment of the present invention.
  • 7D is a plan view of a third transistor according to an embodiment of the present invention.
  • 8A is a plan view of fourth transistors according to an embodiment of the present invention.
  • 8B is a circuit diagram illustrating operations of the first transistor and the fourth transistor in a light emitting period.
  • 9A is a plan view of a first transistor according to an embodiment of the present invention.
  • FIG. 9B is a cross-sectional view of the first transistor corresponding to line II-II' of FIG. 9A.
  • first and second may be used to describe various components, but the components should not be limited by the terms. These terms are only used for the purpose of distinguishing one component from another. For example, a first element may be termed a second element, and similarly, a second element may be termed a first element, without departing from the scope of the present invention. Singular expressions include plural expressions unless the context clearly dictates otherwise.
  • FIG. 1 is a block diagram of a display device DD according to an exemplary embodiment of the present invention.
  • the display device DD includes a timing controller TC, a scan driving circuit SDC, a data driving circuit DDC, and a display panel DP.
  • the display panel DP is described as an emission type display panel.
  • the light emitting display panel may include an organic light emitting display panel or an inorganic light emitting display panel.
  • the timing controller TC receives the input image signals and converts the data format of the input image signals to meet the interface specification with the scan driving circuit SDC to generate image data D-RGB.
  • the timing controller TC outputs image data D-RGB and various control signals DCS and SCS.
  • the scan driving circuit SDC receives the scan control signal SCS from the timing controller TC.
  • the scan control signal SCS may include a vertical start signal for starting the operation of the scan driving circuit SDC, a clock signal for determining output timing of signals, and the like.
  • the scan driving circuit SDC generates scan signals and sequentially outputs them to corresponding scan signal lines SL11 to SL1n.
  • the scan driving circuit SDC generates a plurality of emission control signals in response to the scan control signal SCS and outputs the plurality of emission control signals to corresponding emission control lines ECL1 to ECLn.
  • FIG. 1 shows that a plurality of scan signals and a plurality of emission control signals are output from one scan driving circuit (SDC), the present invention is not limited thereto.
  • the display device DD may include a plurality of scan driving circuits.
  • a driving circuit for generating and outputting a plurality of scan signals and a driving circuit for generating and outputting a plurality of emission control signals may be formed separately.
  • the data driving circuit DDC receives the data control signal DCS and the image data D-RGB from the timing controller TC.
  • the data driving circuit DDC converts the image data D-RGB into data signals and outputs the data signals to a plurality of data lines DL1 to DLm, which will be described later.
  • the data signals are analog voltages corresponding to grayscale values of the image data D-RGB.
  • the light emitting display panel DP includes scan signal lines SL11 to SL1n, light emitting control lines ECL1 to ECLn, data lines DL1 to DLm, a first voltage line VL1, and a second voltage line VL2. ), and a plurality of pixels PX.
  • Each of the scan signal lines SL11 to SL1n and emission control lines ECL1 to ECLn may extend in a first direction DR1 and may be arranged in a second direction DR2.
  • the data lines DL1 to DLm may cross the scan signal lines SL11 to SL1n.
  • the first voltage line VL1 receives the first power voltage ELVDD.
  • a voltage line for receiving the second power supply voltage ELVSS may be further disposed.
  • the second power supply voltage ELVSS has a lower level than the first power supply voltage ELVDD.
  • the second voltage line VL2 receives the initialization voltage Vint.
  • the initialization voltage Vint has a lower level than the first power supply voltage ELVDD.
  • the display device DD according to an exemplary embodiment has been described with reference to FIG. 1 , but the display device DD of the present invention is not limited thereto. Additional signal lines may be added or omitted according to the configuration of the pixel driving circuit. Also, an electrical connection relationship between one pixel PX and signal lines may be changed.
  • the plurality of pixels PX may include a plurality of groups generating light of different colors. For example, it may include a first group of pixels generating red color light, a second group of pixels generating green color light, and a third group of pixels generating blue color light.
  • the light emitting diodes of the red pixels, the light emitting diodes of the green pixels, and the light emitting diodes of the blue pixels may include light emitting layers of different materials.
  • the pixel driving circuit may include a plurality of transistors and at least one capacitor. At least one of the scan driving circuit SDC and the data driving circuit DDC may include a plurality of transistors formed through the same process as the pixel driving circuit.
  • the above-described signal lines, the plurality of pixels PX, the scan driving circuit SDC, and the data driving circuit DDC may be formed on the base substrate by performing the photolithography process and the etching process a plurality of times.
  • FIG. 2 is an equivalent circuit diagram of a pixel PXij according to an embodiment of the present invention.
  • FIG. 3 is a waveform diagram of driving signals for driving the pixel PXij shown in FIG. 2 .
  • the pixel PX may include a light emitting device LD and a pixel circuit CC.
  • the pixel circuit CC may include first to seventh transistors T1 to T7 and a capacitor CP.
  • the pixel circuit CC controls the amount of current flowing through the light emitting element LD in response to the data signal.
  • the light emitting element LD may emit light with a predetermined luminance corresponding to the amount of current provided from the pixel circuit CC.
  • Each of the first to seventh transistors T1 to T7 may include a source, drain, channel, and gate. Each of the source, drain, and channel may be implemented as a different region of the semiconductor pattern.
  • each of the first to seventh transistors T1 to T7 is described as a P-type transistor.
  • the present invention is not limited thereto, and at least some of the first to seventh transistors T1 to T7 may be N-type transistors.
  • the source and drain of the P-type transistor may correspond to the drain and source of the N-type transistor, respectively.
  • the third transistors T3-1 and T3-2 and the fourth transistors T4-1 and T4-2 may be N-type.
  • the drain/source field reduction effect described below may also occur in the N-type third transistors T3-1 and T3-2 and the fourth transistors T4-1 and T4-2.
  • the source of the first transistor T1 is electrically connected to the first voltage line VL1 via the fifth transistor T5, and the drain of the first transistor T1 emits light via the sixth transistor T6. It is electrically connected to the anode of the element LD.
  • the first transistor T1 may be referred to as a driving transistor.
  • the first transistor T1 controls the amount of current flowing through the light emitting element LD in response to the voltage applied to the gate.
  • a gate of the first transistor T1 may be described as a reference node ND.
  • the second transistor T2 is electrically connected between the data line DL and the first transistor T1. Also, the gate of the second transistor T2 is electrically connected to the i-th scan line SLi.
  • the second transistor T2 may be referred to as a switching transistor.
  • the third transistors T3-1 and T3-2 are electrically connected between the gate and drain of the first transistor T1.
  • two third transistors T3 - 1 and T3 - 2 connected in series with each other are shown as an example.
  • the present invention is not limited thereto, and n (where n is a natural number equal to or greater than 1) third transistors may be connected in series between the gate and the drain of the first transistor T1.
  • a gate of each of the third transistors T3 - 1 and T3 - 2 is electrically connected to the i th scan line SLi.
  • the fourth transistors T4-1 and T4-2 are electrically connected between the reference node ND and the second voltage line VL2.
  • two fourth transistors T4 - 1 and T4 - 2 connected in series with each other are shown as an example.
  • the present invention is not limited thereto, and n (where n is a natural number greater than or equal to 1) number of fourth transistors may be electrically connected between the reference node ND and the second voltage line VL2.
  • a gate of each of the fourth transistors T4-1 and T4-2 is electrically connected to the i-1 th scan line SLi-1.
  • the fifth transistor T5 is electrically connected between the first voltage line VL1 and the source of the first transistor T1.
  • a gate of the fifth transistor T5 is electrically connected to the ith emission control line ECLi.
  • the sixth transistor T6 is electrically connected between the drain of the first transistor T1 and the anode electrode of the light emitting element LD. Also, the gate of the sixth transistor T6 is electrically connected to the ith emission control line ECLi.
  • the seventh transistor T7 is electrically connected between the second voltage line VL2 and the anode electrode of the light emitting element LD. Also, the gate of the seventh transistor T7 is electrically connected to the i+1 th scan line SLi+1.
  • the capacitor CP is disposed between the first voltage line VL1 and the reference node ND.
  • the capacitor CP stores a voltage corresponding to the data signal.
  • the amount of current flowing through the first transistor T1 when the fifth transistor T5 and the sixth transistor T6 are turned on may be determined according to the voltage stored in the capacitor CP.
  • the emission control signal Ei may have a high level (E-HIGH) or a low level (E-LOW).
  • Each of the scan signals Si ⁇ 1, Si, and Si+1 may have a high level (S-HIGH) or a low level (S-LOW).
  • a period in which the emission control signal Ei has a high level (E-HIGH) may be defined as a non-emission period of the light emitting element LD.
  • the fourth transistors T4-1 and T4-2 is turned on.
  • the initialization voltage Vint is applied to the reference node ND.
  • the reference node ND and the capacitor CP are initialized with the initialization voltage Vint.
  • the second transistor T2 and the third transistor T3 are turned on.
  • the data signal is applied to the first transistor T1.
  • the first transistor T1 is diode-connected between the second transistor T2 and the third transistor T3.
  • a voltage corresponding to the data signal is applied to the reference node ND.
  • the voltage corresponding to the data signal may be a voltage reduced by the threshold voltage of the first transistor T1 to the data signal.
  • the capacitor CP stores a voltage corresponding to the data signal.
  • the seventh transistor T7 When the i+1th scan signal Si+1 has a low level (S-LOW), the seventh transistor T7 is turned on. When the seventh transistor T7 is turned on, the initialization voltage Vint is provided to the anode electrode of the light emitting element LD, and the parasitic capacitor of the light emitting element LD is discharged.
  • the fifth transistor T5 and the sixth transistor T6 are turned on.
  • the first power supply voltage ELVDD is applied to the first transistor T1.
  • the sixth transistor T6 is turned on, the first transistor T1 and the light emitting element LD are electrically connected. Then, the light emitting element LD generates light with a predetermined luminance corresponding to the amount of current received. Accordingly, a period in which the light emitting control signal Ei has a low level (E-LOW) may be defined as a light emitting period of the light emitting element LD.
  • FIG. 4 is a cross-sectional view of a display panel DP corresponding to a pixel PX according to an exemplary embodiment.
  • 5A is a plan view of a pixel PX according to an exemplary embodiment.
  • 5B to 5G are plan views according to the stacking order of the patterns included in the pixels PX according to an embodiment of the present invention.
  • the display panel DP includes a base layer BS, a circuit element layer DP-CL disposed on the base layer BS, a display element layer DP-OLED, and a thin film encapsulation layer ( TFE) may be included.
  • the display panel DP may further include functional layers such as an antireflection layer or a refractive index control layer.
  • the circuit element layer DP-CL includes at least a plurality of insulating layers and circuit elements. The insulating layers described below may include an organic layer and/or an inorganic layer.
  • An insulating layer, a semiconductor layer, and a conductive layer are formed through processes such as coating and deposition. Thereafter, the insulating layer, the semiconductor layer, and the conductive layer may be selectively patterned through photolithography and etching processes. Through this process, semiconductor patterns, conductive patterns, signal lines, and the like are formed. Patterns disposed on the same layer are formed through the same process.
  • the base layer BS may include a synthetic resin film.
  • the synthetic resin layer may include a thermosetting resin.
  • the synthetic resin layer may be a polyimide-based resin layer, and the material thereof is not particularly limited.
  • the synthetic resin layer may include at least one of acrylic resin, methacrylic resin, polyisoprene, vinyl resin, epoxy resin, urethane resin, cellulose resin, siloxane resin, polyamide resin, and perylene resin.
  • the base layer may include a glass substrate, a metal substrate, or an organic/inorganic composite material substrate.
  • At least one inorganic layer is formed on the upper surface of the base layer BS.
  • the inorganic layer may include at least one of aluminum oxide, titanium oxide, silicon oxide, silicon nitride, silicon oxynitride, zirconium oxide, and hafnium oxide.
  • the inorganic layer may be formed in multiple layers.
  • the multi-layered inorganic layers may constitute a barrier layer (BRL) and/or a buffer layer (BFL) to be described later.
  • the barrier layer BRL and the buffer layer BFL may be selectively disposed.
  • the barrier layer BRL reduces or prevents foreign substances from entering from the outside.
  • the barrier layer BRL may include a silicon oxide layer and a silicon nitride layer. Each of these may be provided in plurality, and silicon oxide layers and silicon nitride layers may be alternately stacked.
  • the buffer layer BFL improves bonding strength between the base layer BS and the semiconductor pattern and/or the conductive pattern.
  • the buffer layer BFL may include a silicon oxide layer and a silicon nitride layer.
  • the silicon oxide layer and the silicon nitride layer may be alternately stacked.
  • a semiconductor pattern SCP may be disposed on the buffer layer BFL.
  • the semiconductor pattern may include an amorphous or crystalline silicon semiconductor.
  • the semiconductor pattern SCP may include a first semiconductor region AC1 and a second semiconductor region AC2.
  • the first semiconductor region AC1 includes the source region S1, the channel region A1, and the drain region D1 of the first transistor T1, and the second semiconductor region AC2 is the second transistor T2.
  • Sources and drains of the transistors described with reference to FIG. 2 may be described as a source region and a drain region in describing a semiconductor region.
  • a first insulating layer 10 is disposed on the buffer layer BFL.
  • the first insulating layer 10 covers the semiconductor pattern SCP.
  • the first insulating layer 10 may be an organic layer or an inorganic layer.
  • the second to sixth insulating layers 20 to 60 described later may also be organic layers or inorganic layers, and are not particularly limited.
  • a first conductive layer CL1 is disposed on the first insulating layer 10 .
  • the first conductive layer CL1 may include a plurality of conductive patterns.
  • the first conductive layer CL1 may include a gate G1 of the first transistor T1 and a gate G2 of the second transistor T2.
  • a second insulating layer 20 covering the first conductive layer CL1 is disposed on the first insulating layer 10 .
  • a second conductive layer CL2 is disposed on the second insulating layer 20 .
  • the second conductive layer CL2 may include a plurality of conductive patterns.
  • the second conductive layer CL2 may include an upper electrode UE.
  • the upper electrode UE may overlap the gate G1 of the first transistor T1 and may form an opening UE-OP.
  • the overlapping upper electrode UE and the gate G1 of the first transistor T1 define a capacitor CP (refer to FIG. 2 ).
  • a third insulating layer 30 covering the second conductive layer CL2 is disposed on the second insulating layer 20 .
  • a third conductive layer CL3 is disposed on the third insulating layer 30 .
  • the third conductive layer CL3 may include a plurality of conductive patterns.
  • the third conductive layer CL3 may include a connection electrode CNE-G3.
  • One connection electrode (CNE-G3) is connected to the gate (G1) of the first transistor (T1) through the contact hole (CH10) passing through the second insulating layer 20 and the third insulating layer (30).
  • the contact hole CH10 passes through the opening UE-OP.
  • connection electrode (CNE-G3) is connected to the second transistor (T2) through the contact hole (CH20) penetrating the first insulating layer 10, the second insulating layer 20, and the third insulating layer 30. ) may be connected to the source region S2.
  • the third conductive layer CL3 may further include a plurality of connection electrodes (not shown).
  • a fourth insulating layer 40 covering the third conductive layer CL3 is disposed on the third insulating layer 30 .
  • a fourth conductive layer CL4 is disposed on the fourth insulating layer 40 .
  • the fourth conductive layer CL4 may include a plurality of conductive patterns.
  • the fourth conductive layer CL4 may include a connection electrode CNE-D1.
  • the connection electrodes CNE-D1 may be respectively connected to corresponding connection electrodes CNE-G3 through contact holes CH11 and CH21 penetrating the fourth insulating layer 40.
  • a fifth insulating layer 50 covering the fourth conductive layer CL4 is disposed on the fourth insulating layer 40 .
  • a fifth conductive layer CL5 is disposed on the fifth insulating layer 50 .
  • the fifth conductive layer CL5 may include a plurality of conductive patterns.
  • the fifth conductive layer CL5 may include the data line DL.
  • the data line DL may be connected to the corresponding connection electrode CNE-D1 through the contact hole CH22 penetrating the fifth insulating layer 50.
  • a sixth insulating layer 60 covering the fifth conductive layer CL5 is disposed on the fifth insulating layer 50 .
  • a light emitting device LD is disposed on the sixth insulating layer 60 .
  • the first electrode AE of the light emitting element LD is disposed on the sixth insulating layer 60 .
  • the first electrode AE may be an anode.
  • a pixel defining layer PDL is disposed on the sixth insulating layer 60 .
  • the opening OP of the pixel defining layer PDL exposes at least a portion of the first electrode AE.
  • the opening OP of the pixel defining layer PDL may define an emission area.
  • An emission layer EML is disposed on the first electrode AE.
  • the patterned light emitting layer EML is illustrated as an example in this embodiment, the light emitting layer EML may be commonly disposed in a plurality of pixels PX (see FIG. 1 ).
  • the commonly disposed light emitting layer EML may generate white light or blue light.
  • the light emitting layer EML may have a multilayer structure.
  • a hole transport layer may be further disposed between the first electrode AE and the light emitting layer EML.
  • a hole injection layer may be further disposed between the hole transport layer and the first electrode AE.
  • a hole transport layer or a hole injection layer may be commonly disposed in a plurality of pixels PX (see FIG. 1 ).
  • a second electrode CE is disposed on the light emitting layer EML.
  • an electron transport layer may be further disposed between the second electrode CE and the light emitting layer EML.
  • An electron injection layer may be further disposed between the electron transport layer and the second electrode CE.
  • the electron transport layer or the electron injection layer may be commonly disposed in a plurality of pixels PX (see FIG. 1 ).
  • a thin film encapsulation layer TFE is disposed on the second electrode CE.
  • the thin film encapsulation layer TFE is commonly disposed in the plurality of pixels PX (see FIG. 1 ).
  • the thin film encapsulation layer TFE directly covers the second electrode CE.
  • a capping layer directly covering the second electrode CE may be further disposed.
  • the thin film encapsulation layer TFE includes at least an inorganic layer or an organic layer.
  • the thin film encapsulation layer (TFE) may include two inorganic layers and an organic layer disposed therebetween.
  • the thin film encapsulation layer may include a plurality of inorganic layers and a plurality of organic layers that are alternately stacked.
  • the first to seventh transistors T1 to T7 of the pixel PX are illustrated. Also, the scan lines SLi-1, SLi, and SLi+1, the emission control line ECLi, the first voltage line VL1, and the second voltage line VL2 are shown.
  • a semiconductor pattern SCP is disposed on the base layer (BS, see FIG. 4 ).
  • the semiconductor pattern SCP includes first to seventh semiconductor regions AC1 to AC7 corresponding to the first to seventh transistors T1 to T7 (see FIG. 2 ).
  • Each of the first to seventh semiconductor regions AC1 to AC7 includes a corresponding source region S1 to S7, a corresponding channel region A1 to A7, and a corresponding drain region D1 to D7.
  • the source regions S1 to S7 and the drain regions D1 to D7 are regions having substantial conductivity due to high doping concentration, and the channel regions A1 to A7 are regions having a low doping concentration, and are similar to those of the source regions S1 to S7. It is disposed between the drain regions D1 to D7.
  • the source and drain of each of the first to seventh transistors T1 to T7 are the source region S1 to S7 and the drain region D1 to D7 of each of the first to seventh semiconductor regions AC1 to AC7. is defined by
  • the first to seventh semiconductor regions AC1 to AC7 may have an integral shape. Source regions S1 to S7 and drain regions D1 to D7 of adjacent semiconductor regions among the first to seventh semiconductor regions AC1 to AC7 may not be distinguished from each other. In FIG. 5B , for convenience of description, source regions S1 to S7 and drain regions D1 to D7 of adjacent semiconductor regions are separately illustrated.
  • the signal cutting region STA is disposed between the source regions S1 to S7 and the drain regions D1 to D7 of different semiconductor regions among the first to seventh semiconductor regions AC1 to AC7. Although shown, it is not limited thereto.
  • the signal cutting region STA may have substantially the same doping concentration as the source regions S1 to S7 or the drain regions D1 to D7.
  • a first conductive layer CL1 is disposed on the first insulating layer 10 (see FIG. 4 ).
  • the first conductive layer CL1 may include scan lines SLi-1, SLi, and SLi+1 extending in the first direction DR1, an emission control line ECLi, and a first gate G1. there is.
  • a part of the i-th scan line SLi overlapping the semiconductor pattern SCP may be the gate G2 of the second transistor T2, and another part of the i-th scan line SLi may be one third transistor ( It may be the gate G31 of T3 - 1 , and another part of the i th scan line SLi may be the gate G32 of another third transistor T3 - 2 .
  • 5C shows the gates G41 and G42 of the fourth transistors T4-1 and T4-2 disposed on the i-1 th scan line SLi-1, and the i+1 th scan line SLi-1. +1), the gate G7 of the seventh transistor T7 is shown, and the gate G5 of the fifth transistor T5 and the sixth transistor T6 are disposed on the ith emission control line ECLi. A gate G6 of is shown.
  • a second conductive layer CL2 is disposed on the second insulating layer 20 (see FIG. 4 ).
  • the second conductive layer CL2 may include an upper electrode UE and a second voltage line VL2.
  • the second voltage line VL2 may extend in the first direction DR1.
  • the second conductive layer CL2 may include a plurality of second voltage lines VL2, and the plurality of second voltage lines VL2 may be arranged in the second direction DR2.
  • a third conductive layer CL3 is disposed on the third insulating layer 30 (see FIG. 4 ).
  • the third conductive layer CL3 may include the connection electrode CNE-G3 described with reference to FIG. 4 .
  • the third conductive layer CL3 may further include a dummy line DML.
  • the dummy line DML may extend in the first direction DR1.
  • the third conductive layer CL3 may include a plurality of dummy lines DML, and the plurality of dummy lines DML may be aligned in the second direction DR2.
  • the plurality of dummy lines DML according to the present exemplary embodiment is only an example, and the plurality of dummy lines DML may extend in the second direction DR2 .
  • the plurality of dummy lines DML may receive a ground voltage or may be floated. In an embodiment of the present invention, the plurality of dummy lines DML may be electrically connected to the plurality of second voltage lines VL2 shown in FIG. 5D. In an embodiment of the present invention, the plurality of dummy lines DML may be electrically connected to the plurality of first voltage lines VL1 shown in FIG. 5F to be described later.
  • a fourth conductive layer CL4 is disposed on the fourth insulating layer 40 (see FIG. 4 ).
  • the fourth conductive layer CL4 may include a first voltage line VL1 and a plurality of connection electrodes.
  • the plurality of connection electrodes may include the connection electrode CNE-D1 described with reference to FIG. 4 .
  • a fifth conductive layer CL5 is disposed on the fifth insulating layer 50 (see FIG. 4 ).
  • the fifth conductive layer CL5 may include a data line DL and a connection electrode CNE.
  • the first electrode AE of FIG. 4 may be connected to the connection electrode CNE of FIG. 5G.
  • 6A is a plan view of the third transistors T3 - 1 and T3 - 2 according to an embodiment of the present invention.
  • 6B and 6C are cross-sectional views of the third transistors T3-1 and T3-2 corresponding to lines II' of FIG. 6A.
  • 6D is a voltage (V GS )-current (I DS ) graph of a transistor according to a comparative example and a transistor according to an embodiment of the present invention.
  • 6E is a cross-sectional view illustrating a doping process of the transistor T3-1.
  • 6F is a circuit diagram illustrating operations of the first transistor T1 and the third transistors T3-1 and T3-2 in an emission period corresponding to a high grayscale data signal.
  • 6G is a circuit diagram illustrating operations of the first transistor T1 and the third transistors T3-1 and T3-2 in a light emission period corresponding to a halftone data signal.
  • FIG. 6A is an enlarged view of the third transistors T3-1 and T3-2 shown in FIGS. 2 and 5A to 5G.
  • a third transistor (T3-2) closer to the gate of the first transistor (T1, see FIG. 2) in the current path. 1) is defined as the left transistor T3-1
  • the third transistor T3-2 disposed farther from the gate of the first transistor T1 (see FIG. 2) is defined as the right transistor T3-2.
  • the semiconductor region AC31 of the left transistor T3 - 1 and the semiconductor region AC32 of the right transistor T3 - 2 are shown in the semiconductor pattern SCP.
  • the drain region D31 of the left transistor T3-1 is the left transistor (
  • the source region S31 of T3-1 is disposed closer to the gate of the first transistor T1 (see FIG. 2)
  • the drain region D32 of the right transistor T3-2 is disposed closer to the gate of the first transistor T3-2.
  • the drain regions D31 and D32 and the source regions S31 and S32 of the third transistors T3-1 and T3-2 have a high-doping region 1 having a relatively high doping concentration and a relatively high doping concentration. It may include a low low-doped region 2 . The low-doping region 2 may be disposed between the high-doping region 1 and the corresponding channel regions A31 and A32.
  • the highly-doped region 1 of each of the drain regions D31 and D32 and the source regions S31 and S32 may be referred to as a first region, and the low-doped region 2 may be referred to as a second region.
  • the high-doped region of any one of the drain regions D31 and D32 and the source regions S31 and S32 1) and the low-doped region 2 are referred to as the first region and the second region, respectively
  • the high-doped region 1 and the low-doped region 2 of the other region are referred to as the third region and the second region. It may also be referred to as each of the four regions.
  • the doping concentration of the first region 1 may be about 1x10 20 /cm 3 .
  • the doping concentration of the second region 2 may be about 5% to about 20% of the doping concentration of the first region 1 .
  • the gates G31 and G32 of each of the third transistors T3 - 1 and T3 - 2 serve as a mask, the doping concentration of the channel regions A31 and A32 may be very low.
  • each of the source region S31 of the left transistor T3-1 and the drain region D32 of the right transistor T3-2 is 2 area 2 may not be included.
  • Doping concentrations of the first region 1 and the second region 2 may be determined according to the doping method.
  • the source region S31 of the left transistor T3-1 and the drain region of the right transistor T3-2 ( The doping concentration of D32) can be controlled substantially the same.
  • the second region 2 of each of the source region S31 of the left transistor T3-1 and the drain region D32 of the right transistor T3-2 is additionally doped so that the second region 2 is removed. can proceed.
  • doping concentrations of the source region S31 of the left transistor T3-1 and the drain region D32 of the right transistor T3-2 are increased, so that the first region 1 and the second region
  • the difference in doping concentration of the region 2 can be controlled to a lower level than that of the first region 1 and the second region 2 .
  • the boundary line between the first region 1, the second region 2, and the channel regions A31 and A32 may be straight in cross section, but as shown in FIG. 6C, the boundary line between the channel regions A31 and A32 may be straight.
  • a boundary line between the first region 1, the second region 2, and the channel regions A31 and A32 may be curved in cross section.
  • the doping concentration of the second region 2 adjacent to the channel regions A31 and A32 may have a Gaussian distribution according to a linear distance from the top surface of the semiconductor pattern SCP.
  • the second region 2 can prevent an abrupt increase in electric field between the channel regions A31 and A32 and the drain regions D31 and D32 or the source regions S31 and S32 (hereinafter referred to as drain/source field reduction effect). .
  • drain/source field reduction effect As a result, the off current (or leakage current) of the third transistors T3-1 and T3-2 can be reduced, as well as the hot carrier effect caused by the shortening of the channel regions A31 and A32. effect; HCE).
  • the 6D shows off currents of transistors according to the presence or absence of the second region 2 .
  • the first graph G10 shows the voltage (V GS )-current (I DS ) characteristics of the transistor according to the comparative example in which the second region 2 is not formed
  • the second graph G20 shows the second region 2 ) represents the voltage (V GS )-current (I DS ) characteristics of the transistor according to the present embodiment formed thereon. It can be seen that the leakage current of the P-type transistor according to the present embodiment is reduced in a period where the gate-source voltage (V GS ) is 5V or more.
  • the leakage current (I GIDL ) follows the equation below, and the leakage current (I GIDL ) is reduced because the drain-gate field is reduced.
  • E x(DL) included in the exponential factor of the exponential function means a field value formed between the drain and the gate.
  • the second region 2 In order for the drain/source field reduction effect to occur, the second region 2 must have a predetermined resistance.
  • the resistance of the second region 2 is inversely proportional to the thickness, proportional to the length, and inversely proportional to the width.
  • the length and width of the second regions may be controlled.
  • resistance of the second regions 2 may be controlled by changing the width.
  • the width W1 of the second region 2 of the drain region D31 of the left transistor T3-1 is the width W0 of the first region 1 of the drain region D31 of the left transistor T3-1.
  • the width W2 of the second region 2 of the source region S32 of the right transistor T3-2 is the width W0 of the first region 1 of the source region S32 of the right transistor T3-2.
  • the width was measured within a reference direction orthogonal to the extension direction of the semiconductor pattern (SCP). Meanwhile, the length is measured in the extension direction of the semiconductor pattern SCP.
  • the second region 2 of the drain region D31 of the left transistor T3-1 and the source region S32 of the right transistor T3-2 A relatively large drain/source field reduction effect may occur in the second region 2 of the .
  • the length of the second regions 2 is shorter than the reference value, some of the second regions 2 may have a relatively small resistance, and the drain/source field reduction effect is not effective in the corresponding second region 2. may occur Even if the second regions 2 have the same length, some of the second regions 2 may have a relatively large resistance because they have a relatively small width.
  • a drain/source field reduction effect may occur in the second region 2 having a relatively small width.
  • the second region 2 of the drain region D31 of the left transistor T3-1 and the second region 2 of the source region S32 of the right transistor T3-2 each have a small width W1, Since it has a large resistance for W2), a drain/source field reduction effect may occur.
  • Widths W0 of the first region 1 and the second region 2 of the source region S31 of the left transistor T3-1 may be substantially the same, and the drain region of the right transistor T3-2 may have the same width. Substantially the width W0 of the first area 1 and the second area 2 of (D32) may be the same. Widths W0 of the source region S31 of the left transistor T3 - 1 and the drain region D32 of the right transistor T3 - 2 may be substantially the same. A drain/source field reduction effect may not occur in the source region S31 of the left transistor T3-1 and the drain region D32 of the right transistor T3-2 having a relatively large width W0.
  • Each of the widths W1 and W2 of the second regions 2 of the drain region D31 of the left transistor T3-1 and the source region S32 of the right transistor T3-2 may be 1 ⁇ m to 2 ⁇ m.
  • Each of the widths W1 and W2 of the second regions 2 may be 1.5 ⁇ m.
  • the width W1 of the second region 2 of the drain region D31 of the left transistor T3-1 and the width W2 of the second region 2 of the source region S32 of the right transistor T3-2 ) is not limited to being the same.
  • the widths W1 and W2 of the second regions 2 of the drain region D31 of the left transistor T3-1 and the source region S32 of the right transistor T3-2 are wider than those of the first regions. may be 10% to 50% smaller than
  • the semiconductor region AC3 of the transistor T3 - 1 may be doped using the gate G31 as a mask. For example, it may be doped at a doping concentration of 1x10 15 /cm 2 .
  • FIG. 6E a cross section corresponding to XX' of FIG. 5C is shown as an example.
  • the first, second, fourth to seventh semiconductor regions AC1 , AC2 , AC4 to AC7 may also be doped as shown in FIG. 6E or may be doped using an additional mask, and the method is not particularly limited. don't
  • the second insulating layer 20 is disposed along the inclined side of the gate G31.
  • the region corresponding to the inclined side surface of the gate G31 of the second insulating layer 20 (hereinafter referred to as the inclined region) has a higher surface area than the region corresponding to the plane of the second insulating layer 20 . has a large thickness based on
  • the distance DT2 between the upper surface of the second insulating layer 20 and the semiconductor region AC3 in the inclined region of the second insulating layer 20 is the second insulating layer 20 in the planar region of the second insulating layer 20. ) may be greater than the distance DT1 between the upper surface of the semiconductor region AC3.
  • the inclination region corresponds to a region preventing doping, and may correspond to a mask pattern.
  • the second region 2 of the drain region D31 and the source region S31 may be defined to correspond to the slope region of the second insulating layer 20 .
  • the length of the slope region that is, the length of the second region 2 may be determined according to the thickness of the gate G31.
  • the thickness of the gate G31 may be 3000 angstroms to 5000 angstroms.
  • Each of the lengths L1 and L2 of the second regions 2 of the drain region D31 of the left transistor T3-1 and the source region S32 of the right transistor T3-2 may be 0.1 ⁇ m to 0.5 ⁇ m.
  • Length L1 of the second region 2 of the drain region D31 of the left transistor T3-1 and length L2 of the second region 2 of the source region S32 of the right transistor T3-2 ) is not limited to being the same.
  • the length of the second region 2 of the source region S31 of the left transistor T3-1 and the length of the second region 2 of the drain region D32 of the right transistor T3-2 are It may be determined within the range of the lengths L1 and L2 of the above-described second regions 2 .
  • the voltage of the gate G1 of the first transistor T1 may have 1V to correspond to the high grayscale data voltage charged in the capacitor CP (see FIG. 2 ). At this time, the voltage of the drain D1 of the first transistor T1 may be 2V. The voltage of the source S32 of the right transistor T3-2 may also be 2V. During the light emission period, the third transistors T3-1 and T3-2 are turned off, but leakage current flows from the source S32 of the right transistor T3-2 to the drain D31 of the left transistor T3-1.
  • the right transistor T3-2 and the left transistor A voltage rises at the intermediate node S31/D32 of T3-1, and leakage current may occur from the intermediate node S31/D32 to the drain D31 of the left transistor T3-1.
  • the voltage of the gate G1 is increased so that the light emitting element (LD, see FIG. 2) can emit light with a brightness darker than a desired gray level.
  • the aforementioned drain/source field reduction effect occurs at least in the second region 2 of the drain D31 of the left transistor T3-1, so that the leakage current can be reduced or prevented.
  • the voltage of the gate G1 of the first transistor T1 may have 3V to correspond to the halftone data voltage charged in the capacitor CP (see FIG. 2 ).
  • the voltage of the source S32 of the right transistor T3-2 may be 2V.
  • the third transistors T3-1 and T3-2 are turned off, but the drain D31 of the left transistor T3-1 or the middle node S31/D32 of the right transistor T3-2 is turned off. Leakage current may occur in the source S32. When a leakage current occurs, the voltage of the gate G1 is reduced so that the light emitting device (LD, see FIG. 2) can emit light with brightness brighter than a desired gray level.
  • LD light emitting device
  • the above-described drain/source field reduction effect occurs at least in the second region 2 of the source S32 of the right transistor T3-2, so that the leakage current can be reduced or prevented. .
  • 7A is a circuit diagram of third transistors T3-1 to T3-3 according to an embodiment of the present invention.
  • 7B is a plan view of the third transistors T3-1 to T3-3 according to an embodiment of the present invention.
  • 7C is a circuit diagram of a third transistor T3 according to an embodiment of the present invention.
  • 7D is a plan view of the third transistor T3 according to an embodiment of the present invention.
  • n (where n is a natural number greater than or equal to 2) third transistors T3-1 to T3-3 are connected in series between the gate G1 and drain D1 of the first transistor T1. can be connected with In this embodiment, n is 3.
  • the first transistor T1 in a current path between the gate G1 and the drain D1 of the first transistor T1 among the third transistors T3-1 to T3-3, the first transistor T1
  • the drain region D31 of the leftmost transistor T3-1 which is closest to the gate G1, includes a first region 1 and a second region 2.
  • the source region S33 of the rightmost transistor T3-3 disposed furthest from the gate G1 of the first transistor T1 among the third transistors T3-1 to T3-3 is the first region ( 1) and the second region (2).
  • the second region 2 of the drain region D31 of the leftmost transistor T3-1 and the second region 2 of the source region S33 of the rightmost transistor T3-3 may have a relatively small width.
  • the source region S31 of the leftmost transistor T3 - 1 and the drain region D33 of the rightmost transistor T3 - 3 may have substantially the same width.
  • the drain region D32 and the source region S32 of the transistor T3 - 2 disposed in the middle may have substantially the same width.
  • the leakage current is reduced or prevented by the leftmost transistor T3-1 in the emission period corresponding to the data voltage of the high grayscale, and the emission corresponding to the data voltage of the middle grayscale is emitted.
  • Leakage current can be reduced or prevented by the rightmost transistor T3 - 3 in the section.
  • one third transistor T3 may be connected between the gate G1 and drain D1 of the first transistor T1.
  • the second region 2 of the drain region D31 of the third transistor T3 and the second region 2 of the source region S31 are relatively larger than other regions of the semiconductor pattern SCP. It can have a small width. Leakage current may not be generated in the third transistor T3.
  • 8A is a plan view of the fourth transistors T4-1 and T4-2 according to an embodiment of the present invention.
  • 8B is a circuit diagram illustrating operations of the first transistor T1 and the fourth transistors T4-1 and T4-2 in the light emission period.
  • FIGS. 1 to 6G a detailed description of the configuration described with reference to FIGS. 1 to 6G will be omitted.
  • one or three or more transistors may be provided between the gate G1 of the first transistor T1 and the second voltage line VL2. can be connected in series.
  • the first transistor T1 In the current path between the gate G1 of the first transistor T1 and the second voltage line VL2 among the fourth transistors T4-1 and T4-2, the first transistor T1 The transistor more adjacent to the gate G1 of ) is the left transistor T4-1, and the transistor disposed farther from the gate G1 of the first transistor T1 is the right transistor T4-2.
  • the second region 2 of the source region S41 of the left transistor T4-1 and the second region 2 of the drain region D42 of the right transistor T4-2 are relative to each other. has a small width.
  • the initialization voltage Vint may be a bias voltage of -2V to -3V.
  • a leakage current path may be formed from the gate G1 of the first transistor T1 to the second voltage line VL2. there is.
  • the drain region D42 of the right transistor T4-2 can reduce or prevent such leakage current from occurring.
  • the source region S41 of the left transistor T4-1 is connected to the gate G1 of the first transistor T1 from the middle node S41/D42 of the fourth transistors T4-1 and T4-2 during the emission period. This can prevent temporary leakage current from flowing.
  • FIG. 9A is a plan view of a first transistor T1 according to an embodiment of the present invention.
  • FIG. 9B is a cross-sectional view of the first transistor T1 corresponding to line II-II' of FIG. 9A.
  • FIGS. 1 to 8B a detailed description of the configuration described with reference to FIGS. 1 to 8B will be omitted.
  • the first transistor T1 includes a source region S1, a drain region D1, a semiconductor region AC1 including a channel region A1 disposed therebetween, and a gate G1 overlapping the channel region A1.
  • the first transistor T1 may also be doped in the same manner as described with reference to FIG. 6E. Accordingly, each of the source region S1 and the drain region D1 may include a first region 1 and a second region 2 .
  • the driving current may be reduced in the turn-on state of the first transistor T1.
  • the resistance of the second region 2 may be designed to be greater than the reference value so that the second region 2 does not have a drain/source field reducing effect.
  • the width W4 of the second region 2 may be greater than the width W3 of the channel region A1.
  • the width W4 of the second region 2 may be 5% to 20% greater than the width W3 of the channel region A1.
  • the entirety of the source region S1 and drain region D1 may have a greater width than the channel region A1.
  • the source region S1 may have a uniform width
  • the drain region D1 may have a uniform width.
  • the width W4 of the source region S1 or drain region D1 of the first transistor T1 is the source region S31 of the third transistors T3-1 and T3-2 shown in FIGS. 6A and 6B. S32) or the width of the drain regions D31 and D32.
  • the integral semiconductor pattern (SCP) shown in FIG. 5B may be patterned to have different widths according to regions.
  • the performance of the pixel driving circuit can be improved by changing the design of the transistor.
  • the pixel driving circuit is an essential component of a display device, and the present invention is highly likely to be applied to a display device.

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  • Electroluminescent Light Sources (AREA)
  • Control Of Indicators Other Than Cathode Ray Tubes (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Control Of El Displays (AREA)
  • Thin Film Transistor (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
PCT/KR2022/009496 2021-07-20 2022-07-01 표시장치 Ceased WO2023003210A1 (ko)

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JP2024500393A JP2024527731A (ja) 2021-07-20 2022-07-01 表示装置
EP22846082.0A EP4376080A4 (en) 2021-07-20 2022-07-01 DISPLAY DEVICE

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KR1020210094660A KR102835787B1 (ko) 2021-07-20 2021-07-20 표시장치
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US12340751B2 (en) * 2022-06-24 2025-06-24 Chengdu Boe Optoelectronics Technology Co., Ltd. Pixel driving circuit and driving method thereof, display panel and display device

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KR19990004943A (ko) * 1997-06-30 1999-01-25 김영환 저농도 도핑 드레인 구조를 갖는 트랜지스터 형성 방법
KR100274546B1 (ko) * 1998-08-21 2000-12-15 윤종용 박막 트랜지스터 및 그 제조 방법
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KR20210022807A (ko) * 2019-08-20 2021-03-04 삼성디스플레이 주식회사 화소 및 이를 구비한 표시 장치

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KR102676492B1 (ko) * 2016-11-30 2024-06-18 엘지디스플레이 주식회사 박막 트랜지스터 및 이를 이용한 표시패널
KR102663630B1 (ko) * 2019-04-23 2024-05-14 삼성디스플레이 주식회사 트랜지스터의 에이징 방법 및 그 트랜지스터를 포함하는 표시 장치
JP7201556B2 (ja) * 2019-08-30 2023-01-10 株式会社ジャパンディスプレイ 半導体装置
CN118763123A (zh) * 2019-09-24 2024-10-11 乐金显示有限公司 薄膜晶体管及其基板及包括该薄膜晶体管的显示设备

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KR19990004943A (ko) * 1997-06-30 1999-01-25 김영환 저농도 도핑 드레인 구조를 갖는 트랜지스터 형성 방법
KR100274546B1 (ko) * 1998-08-21 2000-12-15 윤종용 박막 트랜지스터 및 그 제조 방법
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KR20210022807A (ko) * 2019-08-20 2021-03-04 삼성디스플레이 주식회사 화소 및 이를 구비한 표시 장치

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KR102835787B1 (ko) 2025-07-22
CN218122972U (zh) 2022-12-23
EP4376080A4 (en) 2025-08-27
EP4376080A1 (en) 2024-05-29
JP2024527731A (ja) 2024-07-26
KR20230014111A (ko) 2023-01-30
CN115641807A (zh) 2023-01-24
US20230026562A1 (en) 2023-01-26

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