KR102835787B1 - 표시장치 - Google Patents

표시장치

Info

Publication number
KR102835787B1
KR102835787B1 KR1020210094660A KR20210094660A KR102835787B1 KR 102835787 B1 KR102835787 B1 KR 102835787B1 KR 1020210094660 A KR1020210094660 A KR 1020210094660A KR 20210094660 A KR20210094660 A KR 20210094660A KR 102835787 B1 KR102835787 B1 KR 102835787B1
Authority
KR
South Korea
Prior art keywords
region
transistor
width
gate
transistors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020210094660A
Other languages
English (en)
Korean (ko)
Other versions
KR20230014111A (ko
Inventor
김근우
강태욱
김장현
배준우
이재섭
진동규
최상건
Original Assignee
삼성디스플레이 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 삼성디스플레이 주식회사 filed Critical 삼성디스플레이 주식회사
Priority to KR1020210094660A priority Critical patent/KR102835787B1/ko
Priority to US17/739,501 priority patent/US20230026562A1/en
Priority to EP22846082.0A priority patent/EP4376080A4/en
Priority to PCT/KR2022/009496 priority patent/WO2023003210A1/ko
Priority to JP2024500393A priority patent/JP2024527731A/ja
Priority to CN202221861370.0U priority patent/CN218122972U/zh
Priority to CN202210851216.3A priority patent/CN115641807A/zh
Publication of KR20230014111A publication Critical patent/KR20230014111A/ko
Application granted granted Critical
Publication of KR102835787B1 publication Critical patent/KR102835787B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H10D30/6715—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes characterised by the doping profiles, e.g. having lightly-doped source or drain extensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1216—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Electroluminescent Light Sources (AREA)
  • Control Of Indicators Other Than Cathode Ray Tubes (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Control Of El Displays (AREA)
  • Thin Film Transistor (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
KR1020210094660A 2021-07-20 2021-07-20 표시장치 Active KR102835787B1 (ko)

Priority Applications (7)

Application Number Priority Date Filing Date Title
KR1020210094660A KR102835787B1 (ko) 2021-07-20 2021-07-20 표시장치
US17/739,501 US20230026562A1 (en) 2021-07-20 2022-05-09 Display device
PCT/KR2022/009496 WO2023003210A1 (ko) 2021-07-20 2022-07-01 표시장치
JP2024500393A JP2024527731A (ja) 2021-07-20 2022-07-01 表示装置
EP22846082.0A EP4376080A4 (en) 2021-07-20 2022-07-01 DISPLAY DEVICE
CN202221861370.0U CN218122972U (zh) 2021-07-20 2022-07-19 显示装置
CN202210851216.3A CN115641807A (zh) 2021-07-20 2022-07-19 显示装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020210094660A KR102835787B1 (ko) 2021-07-20 2021-07-20 표시장치

Publications (2)

Publication Number Publication Date
KR20230014111A KR20230014111A (ko) 2023-01-30
KR102835787B1 true KR102835787B1 (ko) 2025-07-22

Family

ID=84516945

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020210094660A Active KR102835787B1 (ko) 2021-07-20 2021-07-20 표시장치

Country Status (6)

Country Link
US (1) US20230026562A1 (https=)
EP (1) EP4376080A4 (https=)
JP (1) JP2024527731A (https=)
KR (1) KR102835787B1 (https=)
CN (2) CN115641807A (https=)
WO (1) WO2023003210A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12340751B2 (en) * 2022-06-24 2025-06-24 Chengdu Boe Optoelectronics Technology Co., Ltd. Pixel driving circuit and driving method thereof, display panel and display device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100992137B1 (ko) 2003-11-18 2010-11-04 삼성전자주식회사 박막 트랜지스터 표시판 및 그의 제조 방법

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1034772A (en) * 1910-06-14 1912-08-06 Revolute Machine Company Photographic-printing machine.
JPH06232152A (ja) * 1993-01-29 1994-08-19 Mitsubishi Electric Corp 電界効果トランジスタ及びその製造方法
KR19990004943A (ko) * 1997-06-30 1999-01-25 김영환 저농도 도핑 드레인 구조를 갖는 트랜지스터 형성 방법
KR100274546B1 (ko) * 1998-08-21 2000-12-15 윤종용 박막 트랜지스터 및 그 제조 방법
JP3356429B2 (ja) * 2000-04-11 2002-12-16 日本電気株式会社 液晶表示装置および液晶プロジェクタ装置
JP4141138B2 (ja) * 2001-12-21 2008-08-27 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR102676492B1 (ko) * 2016-11-30 2024-06-18 엘지디스플레이 주식회사 박막 트랜지스터 및 이를 이용한 표시패널
KR102663630B1 (ko) * 2019-04-23 2024-05-14 삼성디스플레이 주식회사 트랜지스터의 에이징 방법 및 그 트랜지스터를 포함하는 표시 장치
KR102693264B1 (ko) * 2019-08-20 2024-08-12 삼성디스플레이 주식회사 화소 및 이를 구비한 표시 장치
JP7201556B2 (ja) * 2019-08-30 2023-01-10 株式会社ジャパンディスプレイ 半導体装置
CN118763123A (zh) * 2019-09-24 2024-10-11 乐金显示有限公司 薄膜晶体管及其基板及包括该薄膜晶体管的显示设备

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100992137B1 (ko) 2003-11-18 2010-11-04 삼성전자주식회사 박막 트랜지스터 표시판 및 그의 제조 방법

Also Published As

Publication number Publication date
CN218122972U (zh) 2022-12-23
EP4376080A4 (en) 2025-08-27
EP4376080A1 (en) 2024-05-29
JP2024527731A (ja) 2024-07-26
WO2023003210A1 (ko) 2023-01-26
KR20230014111A (ko) 2023-01-30
CN115641807A (zh) 2023-01-24
US20230026562A1 (en) 2023-01-26

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