CN115641807A - 显示装置 - Google Patents

显示装置 Download PDF

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Publication number
CN115641807A
CN115641807A CN202210851216.3A CN202210851216A CN115641807A CN 115641807 A CN115641807 A CN 115641807A CN 202210851216 A CN202210851216 A CN 202210851216A CN 115641807 A CN115641807 A CN 115641807A
Authority
CN
China
Prior art keywords
region
transistor
transistors
width
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202210851216.3A
Other languages
English (en)
Chinese (zh)
Inventor
金根佑
姜泰旭
金长玄
裵俊佑
李在燮
陈东奎
崔相虔
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Display Co Ltd
Original Assignee
Samsung Display Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Display Co Ltd filed Critical Samsung Display Co Ltd
Publication of CN115641807A publication Critical patent/CN115641807A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H10D30/6715—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes characterised by the doping profiles, e.g. having lightly-doped source or drain extensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1216—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Electroluminescent Light Sources (AREA)
  • Control Of Indicators Other Than Cathode Ray Tubes (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Control Of El Displays (AREA)
  • Thin Film Transistor (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
CN202210851216.3A 2021-07-20 2022-07-19 显示装置 Pending CN115641807A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020210094660A KR102835787B1 (ko) 2021-07-20 2021-07-20 표시장치
KR10-2021-0094660 2021-07-20

Publications (1)

Publication Number Publication Date
CN115641807A true CN115641807A (zh) 2023-01-24

Family

ID=84516945

Family Applications (2)

Application Number Title Priority Date Filing Date
CN202210851216.3A Pending CN115641807A (zh) 2021-07-20 2022-07-19 显示装置
CN202221861370.0U Active CN218122972U (zh) 2021-07-20 2022-07-19 显示装置

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN202221861370.0U Active CN218122972U (zh) 2021-07-20 2022-07-19 显示装置

Country Status (6)

Country Link
US (1) US20230026562A1 (https=)
EP (1) EP4376080A4 (https=)
JP (1) JP2024527731A (https=)
KR (1) KR102835787B1 (https=)
CN (2) CN115641807A (https=)
WO (1) WO2023003210A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12340751B2 (en) * 2022-06-24 2025-06-24 Chengdu Boe Optoelectronics Technology Co., Ltd. Pixel driving circuit and driving method thereof, display panel and display device

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1034772A (en) * 1910-06-14 1912-08-06 Revolute Machine Company Photographic-printing machine.
JPH06232152A (ja) * 1993-01-29 1994-08-19 Mitsubishi Electric Corp 電界効果トランジスタ及びその製造方法
KR19990004943A (ko) * 1997-06-30 1999-01-25 김영환 저농도 도핑 드레인 구조를 갖는 트랜지스터 형성 방법
KR100274546B1 (ko) * 1998-08-21 2000-12-15 윤종용 박막 트랜지스터 및 그 제조 방법
JP3356429B2 (ja) * 2000-04-11 2002-12-16 日本電気株式会社 液晶表示装置および液晶プロジェクタ装置
JP4141138B2 (ja) * 2001-12-21 2008-08-27 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR100992137B1 (ko) 2003-11-18 2010-11-04 삼성전자주식회사 박막 트랜지스터 표시판 및 그의 제조 방법
KR102676492B1 (ko) * 2016-11-30 2024-06-18 엘지디스플레이 주식회사 박막 트랜지스터 및 이를 이용한 표시패널
KR102663630B1 (ko) * 2019-04-23 2024-05-14 삼성디스플레이 주식회사 트랜지스터의 에이징 방법 및 그 트랜지스터를 포함하는 표시 장치
KR102693264B1 (ko) * 2019-08-20 2024-08-12 삼성디스플레이 주식회사 화소 및 이를 구비한 표시 장치
JP7201556B2 (ja) * 2019-08-30 2023-01-10 株式会社ジャパンディスプレイ 半導体装置
CN118763123A (zh) * 2019-09-24 2024-10-11 乐金显示有限公司 薄膜晶体管及其基板及包括该薄膜晶体管的显示设备

Also Published As

Publication number Publication date
KR102835787B1 (ko) 2025-07-22
CN218122972U (zh) 2022-12-23
EP4376080A4 (en) 2025-08-27
EP4376080A1 (en) 2024-05-29
JP2024527731A (ja) 2024-07-26
WO2023003210A1 (ko) 2023-01-26
KR20230014111A (ko) 2023-01-30
US20230026562A1 (en) 2023-01-26

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