WO2023002555A1 - 走査型縮小投影光学系及びこれを用いたレーザ加工装置 - Google Patents

走査型縮小投影光学系及びこれを用いたレーザ加工装置 Download PDF

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Publication number
WO2023002555A1
WO2023002555A1 PCT/JP2021/027082 JP2021027082W WO2023002555A1 WO 2023002555 A1 WO2023002555 A1 WO 2023002555A1 JP 2021027082 W JP2021027082 W JP 2021027082W WO 2023002555 A1 WO2023002555 A1 WO 2023002555A1
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Prior art keywords
substrate
optical system
laser beam
reduction projection
scanning
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PCT/JP2021/027082
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English (en)
French (fr)
Japanese (ja)
Inventor
裕 山岡
悟基 仲田
健人 宇佐美
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Shin Etsu Chemical Co Ltd
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Shin Etsu Chemical Co Ltd
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Application filed by Shin Etsu Chemical Co Ltd filed Critical Shin Etsu Chemical Co Ltd
Priority to CN202180100247.9A priority Critical patent/CN117677888A/zh
Priority to US18/576,704 priority patent/US20240246172A1/en
Priority to PCT/JP2021/027082 priority patent/WO2023002555A1/ja
Priority to KR1020247000093A priority patent/KR20240031297A/ko
Priority to EP21950909.8A priority patent/EP4375002A4/en
Priority to JP2021572954A priority patent/JP7111916B1/ja
Priority to JP2022096305A priority patent/JP7255000B2/ja
Priority to JP2022096264A priority patent/JP7819043B2/ja
Priority to JP2022096303A priority patent/JP7382453B2/ja
Publication of WO2023002555A1 publication Critical patent/WO2023002555A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08—Devices involving relative movement between laser beam and workpiece
    • B23K26/082—Scanning systems, i.e. devices involving movement of the laser beam relative to the laser head
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
    • B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
    • B23K26/0624—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses using ultrashort pulses, i.e. pulses of 1 ns or less
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/0006—Working by laser beam, e.g. welding, cutting or boring taking account of the properties of the material involved
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
    • B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
    • B23K26/0643—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms comprising mirrors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
    • B23K26/0648—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms comprising lenses
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
    • B23K26/0652—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms comprising prisms
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/352—Working by laser beam, e.g. welding, cutting or boring for surface treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50—Working by transmitting the laser beam through or within the workpiece
    • B23K26/57—Working by transmitting the laser beam through or within the workpiece the laser beam entering a face of the workpiece from which it is transmitted through the workpiece material to work on a different workpiece face, e.g. for effecting removal, fusion splicing, modifying or reforming
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
    • G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
    • G02B26/10—Scanning systems
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/01—Manufacture or treatment
    • H10H29/03—Manufacture or treatment using mass transfer of LEDs, e.g. by using liquid suspensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W95/00—Packaging processes not covered by the other groups of this subclass
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/42—Printed circuits
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7432—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used in a transfer process involving transfer directly from an origin substrate to a target substrate without use of an intermediate handle substrate

Definitions

  • the present invention relates to a scanning reduction projection optical system and a laser processing apparatus using the same.
  • Patent Document 1 a high-speed and high-precision lift device.
  • defects of up to 1% exist in minute elements, etc. on the donor substrate and receptor substrate that are transferred and mounted by the transfer device that uses the above-mentioned stamp technology and roll transfer technology used in the lift device.
  • the transfer device that uses the above-mentioned stamp technology and roll transfer technology used in the lift device.
  • such techniques can be used not only for retransfer from a donor substrate to a receptor substrate, but also for removal of irradiated objects such as defective micro-elements located on the substrate and portions of unwanted material. It is also expected to be used in the process of removing defects in addition to the process of mounting microelements by transfer.
  • Patent Document 1 there is a highly accurate transfer technology based on a step-and-repeat method.
  • a beam homogenizer that combines excimer laser light with a lens array is used.
  • the laser beam is shaped into a laser beam with a uniform energy distribution using a photomask and a reduction projection lens, which is then reduced and projected onto a minute element or the like located on the donor substrate (for retransfer), and the minute element or the like is projected. is lifted onto the substrate to be modified.
  • an optical system that combines a galvanometer scanner and an f ⁇ lens is well known. It is possible to remove the element from the substrate to be corrected at high speed as long as the positional accuracy of the scanner allows, but the subsequent retransfer, which requires high positional accuracy, is difficult due to the limit of accuracy. .
  • the scanned laser light is selectively irradiated through an f ⁇ lens or the like toward the openings arranged on the photomask, and the apertures are positioned on the substrate. It is possible to construct a high-speed, high-positional-precision scanning reduction projection optical system with reduced dependence on the scanning accuracy of the scanner.
  • a Nd:YAG laser beam is scanned by a galvanomirror, and reduced projection is performed via an f ⁇ lens and a photomask, thereby correcting positional deviation of an irradiation area on a donor substrate due to low scanning accuracy. Examples of compensating optics are shown.
  • the first invention is directed to irradiation objects such as microelements such as mini LEDs or micro LEDs arranged in multiple numbers on a substrate, or material films and functional films attached to the substrate by coating or printing.
  • Scanning reduction projection that can be used in a laser processing apparatus that irradiates a multimode pulsed laser beam and induces a reaction directly on an object to be irradiated or through a substance between the substrate and the object to be irradiated
  • An optical system comprising a lens array type zoom homogenizer, a scanning mirror scanned by one or more drive axis controllers, a photomask, and a projection lens system telecentric at least on the image side as constituent optical elements.
  • a plurality of openings having a predetermined shape to be reduced and projected are arranged at a predetermined pitch in the photomask.
  • the homogenizer is a zoom homogenizer including a first lens array, a second lens array, and a condenser lens, the second lens array and the condenser lens constituting an infinity correction optical system, and one or more lenses on the photomask.
  • An illuminated area of predetermined size covering the adjacent apertures is imaged onto the photomask to compensate, among other things, for variations in the location and size of the illuminated area and the energy intensity distribution within the illuminated area.
  • “Compensation for fluctuations” means that fluctuations in the oscillation state, for example, are known to cause fluctuations in the beam pointing stability, beam size, and intensity distribution of the beam cross section. A state in which the influence is avoided in the irradiation area imaged on the mask. As a result, a very small area can be imaged on the mask-projected donor substrate with a highly uniform energy distribution.
  • the predetermined size is a size such that the irradiation area does not extend to any other openings adjacent to the periphery of the opening group. That is, considering the irradiation position accuracy on the photomask due to the scanning accuracy of the scanning mirror, it is assumed that the laser beam passes through the adjacent opening and is irradiated onto the irradiation object (not intended to be irradiated) on the substrate. If so, the boundary (outer edge) of the energy distribution above the threshold at which the reaction is induced has a size that does not reach (do not cover) any openings adjacent to the opening group included in the irradiation area. As an example, in FIG.
  • the irradiation area (DP) enclosed by the dash-dotted line illustrates the maximum allowable size of the irradiation area covering an aperture group consisting of four apertures (61), Small illumination area exemplifies the minimum size of the illumination area that covers one aperture.
  • each example of the irradiation area is shown double to express the deviation due to the positional accuracy of the scanner.
  • the pitch (Pi) of the apertures on the photomask is the distance to be lifted onto the receptor substrate, assuming that the reduction magnification of the reduction projection lens is 1/c. It is fixed at c times the pitch of the object to be irradiated.
  • the lens elements constituting the first lens array and the second lens array are not limited to the fly-eye type, and may be cylindrical or spherical. Therefore, each lens array may be composed of a combination of orthogonal lens elements. In addition, there are zoom homogenizers with the addition of a third lens array.
  • the projection lens system includes a field lens disposed between the condenser lens and the photomask, and a reduction projection lens telecentric at least on the image side. It is a projection optical system.
  • the specifications of the field lens are determined based on the specifications of the zoom homogenizer, condenser lens (3) and telecentric lens, and the preferred position in the present invention is just before the photomask (6) as shown in FIG. .
  • the focal length of this field lens (5) is such that the laser light from the zoom homogenizer (the number of condensing points corresponding to the number of lens elements in the second lens array (2)) reaches the entrance pupil of the image-side telecentric reduction projection lens (8). It is designed with a curvature that allows it to pass through the aperture (7) placed in position.
  • a third invention is a scanning reduction projection optical system according to the first or second invention, wherein the scanning mirror (4) is composed of a biaxial galvanometer scanner. Thereby, the irradiation area of the laser beam can be scanned toward the openings arranged in a plurality of rows on the photomask (6).
  • control devices for scanning mirrors such as a dedicated controller or a combination of a dedicated board and a PC. Both can be used to control the oscillation timing of the pulsed laser light.
  • the lens array comprises an aperture group in which apertures each having a size smaller than the size of each lens element constituting the lens array are arranged so as to face each lens element. It is a scanning reduction projection optical system using a zoom homogenizer in which an array mask is arranged immediately before the first lens array or between the first lens array and the second lens array.
  • a virtual image due to stray light between lens elements can be removed on the donor substrate on which the shape of the aperture on the photomask has been reduced and projected, and extremely fine image formation with stable and highly uniform energy distribution can be obtained.
  • an arbitrary shape microscopic image can be obtained in accordance with the shape of the aperture of the photomask.
  • the lens element When the lens element is cylindrical, it may be used in combination with an array mask with an elongated aperture.
  • the position of the array mask is determined while checking the irradiation area on the photomask with a beam profiler or the like in the range immediately before or after the first lens array or between the first lens array and the second lens array. matter.
  • the number of lens elements and the number of aperture groups of the array mask do not have to match.
  • the NA of the optical system can be adjusted by reducing the numerical aperture of the outer periphery of the array mask.
  • dA is the element size of the first lens array of fly-eye type, or the size of the aperture of the array mask disposed immediately before the first lens array
  • f1 is the focal length of the first lens array
  • the focal length of the second lens array is f2
  • the focal length of the condenser lens is fC, forming the projection lens system.
  • the array mask according to the fourth aspect has a plurality of types of openings that enable switching between groups of openings having different sizes, shapes, or numbers of openings within the plane of the substrate. It is a scanning reduction projection optical system in which groups are arranged.
  • FIG. 4 shows an example of an array mask in which a group of apertures for irregular illumination and a group of apertures facing each other in the same number as the lens elements of the lens array are arranged on one substrate.
  • a sixth invention is the scanning reduction projection optical system according to the fourth or fifth invention, wherein the array mask is installed on a mount including a ⁇ axis that enables fine rotational adjustment around the optical axis.
  • a highly uniform image can be obtained by superimposing the light emitted from each lens element of the second lens array on the photomask by the condenser lens.
  • the positional deviation within the plane perpendicular to the optical axis does not affect the uniformity.
  • the outline of the image formation becomes blurred, resulting in multiple image formation.
  • FIG. (Here, an array mask having a circular aperture shape is used.) The influence of such rotational shift increases as the image formation becomes smaller.
  • a seventh invention is a scanning reduction projection optical system in which the various optical elements according to any one of the first to sixth inventions correspond to oscillation wavelengths of an excimer laser.
  • An eighth invention is a laser processing apparatus utilizing multimode pulsed laser light directed to an irradiation target positioned on a substrate to induce a reaction, wherein the multimode pulsed laser oscillates from the laser apparatus.
  • a laser processing apparatus configured to reduce and project light onto a substrate held on a stage having at least X-axis and Y-axis drive axes by the scanning type reduction projection optical system according to any one of 1 to 6. .
  • irradiation targets positioned on the substrate, such as the aforementioned defective minute elements and unnecessary portions of the functional film on the circuit board.
  • induced “reactions” herein include, but are not limited to, mechanical, optical, electrical, magnetic, and thermal reactions.
  • the substrate is a donor substrate having the object to be irradiated on the surface thereof, and a pulsed laser beam is irradiated from the back surface of the donor substrate toward the object to be irradiated.
  • a laser processing apparatus for mounting, retransfer, or both for selectively peeling or separating an irradiation object and lifting it onto a receptor substrate facing a donor substrate, more specifically a lift apparatus. is.
  • the stage is a donor stage that holds the donor substrate with its back surface facing the incident side of the pulsed laser beam, and further holds the receptor substrate in the X-axis, Y-axis, and Z-axis directions in the vertical direction.
  • a receptor stage having a ⁇ axis that rotates in the XY plane, the scanning reduction projection optical system and the donor stage are installed on a first platen, and the receptor stage is a second platen or
  • the first surface plate and the second surface plate are installed on the foundation surface plate, and the first surface plate and the second surface plate are each independently installed on the foundation surface plate.
  • selectively exfoliating or separating the irradiation object means, when the irradiation object is a microelement, selectively peeling off the microelement itself from the donor substrate.
  • the functional film, etc. of the portion corresponding to the image formation position and size of the laser beam projected in a reduced size through the opening on the photomask. means to selectively peel or separate the Note that this peeling or separation includes a case where a so-called ablation process does not intervene.
  • first surface plate, the second surface plate, and the base surface plate on which these stages are installed must be made of a highly rigid member such as steel, stone, or ceramic.
  • Stone materials typified by granite (granite/granite) are preferably used as the stone material.
  • the scanning mirror control device selects based on previously acquired position information of an object to be irradiated on the donor substrate and information on a planned lift position on the receptor substrate.
  • the lift device includes a function of controlling a scanning mirror that scans the optical axis of a pulsed laser and a function of controlling the irradiation of the pulsed laser light toward the opening on the photomask.
  • the laser beam from the scanning reduction projection optical system is applied only to the irradiation target on the donor substrate to be lifted, which is selected based on the information on the defective portions of the receptor substrate to be lifted and the donor substrate to be lifted.
  • a scanning mirror is controlled to scan the optical axis across an aperture on the photomask opposite the selected object to be illuminated.
  • An eleventh invention is the lift device according to the ninth or tenth invention, wherein the donor stage can hold two or more donor substrates and can be used by switching between them.
  • a first donor substrate coated with a conductive paste film is irradiated with a pulsed laser beam of a predetermined size that has been reduced and projected by the scanning reduction projection optical system according to the present invention, and a position on the opposite receptor substrate is irradiated. Then, a portion of the conductive paste film corresponding to the size is lifted (paste printing). Next, by moving the donor stage, the first donor substrate is switched to the second donor substrate (carrier substrate), the microelement (device) on the carrier substrate is lifted to the same position on the receptor substrate, and the conductive paste is applied. It is fixed through the membrane.
  • a twelfth invention is the lift device according to the ninth to eleventh inventions, wherein the donor stage is suspended from the lower surface of the first surface plate.
  • the order of installation of the axes constituting the donor stage is a matter of design, but preferably, from the lower surface of the horizontally installed first surface plate, the X-axis and the Y-axis are arranged in this order, and if the ⁇ -axis is included, it is below it. to hang.
  • the axial configuration of the receptor stage is also a matter of design.
  • a thirteenth invention is the laser processing device according to the eighth invention or the lift device according to any one of the ninth to twelfth inventions, wherein the laser device is an excimer laser device.
  • a fourteenth invention is a receptor substrate facing an irradiation target on a donor substrate using a lift device according to the present invention equipped with a scanning reduction projection optical system according to any one of the ninth to thirteenth inventions.
  • the lift method includes "position information D" which is the position information of the irradiation object on the donor substrate, and the planned lift position of the irradiation object on the receptor substrate.
  • An inspection process for obtaining certain "position information R" in advance, a division process for dividing a region on the donor substrate into "divided areas D" of a predetermined size, and division by lifting based on the position information D and the position information R A selection step of selecting a position of an object to be irradiated within area D, and irradiating the donor substrate through an opening on a photomask opposite (via a reduction projection lens) to the position of the selected object to be irradiated.
  • This is a lift method for mounting or re-transferring onto a substrate.
  • the position information D and/or the position information R may be inspected using an independent inspection device separate from the lift device, and the result may be acquired by the control device of the lift device via communication means, It may be calculated from design numerical values based on the measurement result when positioning (aligning) the donor substrate and the receptor substrate with this lift device. It is desirable that this inspection process be performed before the division process, although it depends on the total tact time for mounting or retransfer.
  • the position of the irradiation object selected in the divided area D means, when this lifting method is used for mounting, all the irradiation objects on the donor substrate opposite to the planned lift position in the opposing divided area R (however, , excluding defective areas), and when used for retransfer, the object to be irradiated on the donor substrate (however, defective areas (non-element areas) ) is the position of
  • the pulse laser light is oscillated in synchronization with the time when the optical axis is scanned at the position of the selected object to be irradiated, or the scanning and stopping are repeated.
  • the position information D includes not only the positional coordinates of the microelements as the irradiation target, which are normally mounted on the donor substrate, but also the position coordinates of the irradiation target that can be peeled off or separated normally. (as anomalous position information) can also be included (as anomaly position information). The same applies to the position information R when this lift method is used for retransfer.
  • the maximum size of the divided area D depends on the reduction projection lens that constitutes the scanning reduction projection optical system mounted on this lift device.
  • telecentric demagnification projection lenses are limited in numerical aperture and magnification in view of their manufacturing costs, and these specifications limit the area on the photomask, and thus on the donor substrate, that can be lifted by a single scan. .
  • the divided areas D are set in the region of the donor substrate, and the donor substrate and the receptor substrate are separated from each other. are moved by the step-and-repeat operation of each stage holding the , and when these stages are stopped, vibration is avoided and lifted with high accuracy.
  • the designed mounting pitch of the object to be irradiated on the donor substrate is used for mounting using the lift method
  • the designed mounting pitch is calculated from the position information R. 1, 1/2, 1/3, etc. of the designed mounting pitch for the irradiation target on the already mounted receptor substrate when used for the pitch or for retransfer. It is a lift method when it is a multiple of an integer of 1 or more, such that
  • the mounting pitch on the opposing donor substrate of the same size is 1/n times in the X row and 1/m times in the Y row. (n and m are different integers of 1 or more).
  • the actual mounting pitch of the object to be irradiated on the donor substrate calculated from the positional information D acquired in the inspection process, and the mounting pitch on the receptor substrate similarly calculated from the positional information R. between the substrates (taking into account differences in packing density on the donor substrate).
  • the mounting pitch on the receptor substrate is calculated from the planned lift position (designed position) of the object to be irradiated. It is the actual implementation pitch of things.
  • the actual mounting pitch of the irradiation object mounted is different from the designed mounting pitch. It may have an error ( ⁇ Pi). Even if this error does not tend to fluctuate depending on the location on the same substrate, it can be assumed that there is a difference (has an error) between production lots of donor substrates, and further between donor substrates. It is from. In this case, the error ⁇ Pi is accumulated according to the number of irradiation objects included in the divided area D.
  • the sixteenth invention is a lift method in which the amount of movement of each substrate in the movement step of the fifteenth invention is set to a movement amount that offsets this "accumulated error amount".
  • the position of the irradiation target in the area may exceed the allowable range in terms of lift position accuracy.
  • the planned position where the laser light passing through the opening on the photomask forms an image on the donor substrate and its position. The deviation from the position of the object to be irradiated becomes a problem especially when the object to be irradiated on the donor substrate is densely packed and the pitch is narrow.
  • the distance between adjacent irradiation objects on the donor substrate is set as the upper limit, and the irradiation size of the laser beam irradiated toward the irradiation object on the donor substrate and the size of the irradiation object Considering the difference and the effect of these positional deviations on the lift position accuracy, the range of the allowable cumulative error amount is determined, and the position where the cumulative error amount in the divided area D is the maximum (for example, the upper left corner as a reference case), if this allowable range is exceeded, the size of the divided area D in the dividing step of the sixteenth invention is further reduced to a size that allows the cumulative error amount at that position to fall within the allowable range. divided area D”.
  • the irradiation object selected in the corrected divided area D is mounted or re-transferred into the "corrected divided area R", which is also determined to have the same size for the sake of convenience, on the opposing receptor substrate.
  • a transfer step is performed in which the donor substrate and the receptor substrate are moved by a stage in order to be lifted to the next correction division area R.
  • the amount of movement of each stage is adjusted so as to offset the accumulated error amount.
  • the positional information D, the positional information R, the size of the divided area D, and the allowable range are used as parameters by a simulation program to perform mounting or retransfer of the entire receptor substrate.
  • the size of the corrected divided area D, the combination of the movement amounts of each stage, and the execution order of each process are determined so as to minimize the time.
  • a small and stable irradiation area with a uniform energy distribution without fluctuation is directed to the opening arranged on the photomask while compensating for the scanning accuracy deficiency of the scanning mirror without using a large-diameter f-theta lens or telecentric projection lens.
  • a scanning type reduction optical system that scans at high speed and performs reduction projection on an object to be irradiated with high uniformity and precision, a defect removal device equipped with the system, and a lift device for mounting or retransfer.
  • FIG. 2 is a conceptual diagram illustrating a state of a photomask having openings arranged in a matrix.
  • FIG. 2 is a conceptual diagram illustrating a state of a photomask in which openings are arranged in a line;
  • FIG. 2 is a conceptual diagram exemplifying how the constituent elements of the scanning reduction projection optical system are arranged; (without array mask)
  • FIG. 4 is a schematic diagram illustrating the appearance of an array mask in which a plurality of aperture groups are arranged; Beam profiler image of the ( ⁇ -off-axis) irradiated area on the photomask.
  • FIG. 2 is a schematic conceptual diagram (three-dimensional) of a lift device equipped with a scanning reduction projection optical system.
  • FIG. 2 is a schematic conceptual diagram of a lift device equipped with a scanning reduction projection optical system;
  • FIG. 2 is a conceptual diagram of the element configuration of a zoom homogenizer;
  • FIG. 4 is a conceptual diagram regarding the arrangement of each optical element from the zoom homogenizer to the donor substrate.
  • FIG. 2 is a conceptual diagram of a photomask used in Example 1;
  • FIG. 4 is a conceptual diagram showing how a region on a 6-inch donor substrate is divided into 27 divided areas.
  • FIG. 4 is a conceptual diagram showing the relationship between the position on the donor substrate and the amount of accumulated error;
  • FIG. 4 is a conceptual diagram showing how defect location information D and defect location information R overlap;
  • FIG. 4 is a conceptual diagram showing how divided areas of opposing substrates are made to face each other and lifted.
  • FIG. 10 is a conceptual diagram showing how substrate division areas that do not face each other are lifted while being opposed to each other.
  • microelements (micro LED elements) with a size of 30 ⁇ 60 [ ⁇ m] (X axis ⁇ Y axis) are arranged in a matrix without defects on a 6-inch donor substrate.
  • An embodiment of a lift device for mounting irradiation objects in a matrix of 222 ⁇ 225 (49950 in total) on a receptor substrate of the same size is shown.
  • the lift position accuracy required for the approximately 50,000 minute elements mounted on the receptor substrate is ⁇ 2 [ ⁇ m], and the pitch in each axial direction is 450 [ ⁇ m].
  • minute elements are arranged without defects (no element-free portions) at a pitch that is 1/2 times the mounting pitch of the positions to be lifted on the receptor substrate, and the total number is about 200,000. be.
  • the distance (interval) between adjacent microelements is X: 195 [ ⁇ m] and Y: 165 [ ⁇ m].
  • the size of the receptor substrate is the same as that of the donor substrate, and the arrangement pitch of the microelements is the same on both the X axis and the Y axis.
  • FIG. 6A shows an example of the appearance of a lift device according to the implementation of the present invention.
  • the configuration shown in this external view can be applied to receptor substrates of 55 inches or more in size.
  • FIG. 6B shows a conceptual diagram of the layout of the main components.
  • illustration of the laser device, various control devices, mounts of other optical elements, etc. is omitted, and the X-axis, Y-axis, and Z-axis directions are shown in the figure.
  • the first surface plates (G11, G12) and the second surface plate (G2) were all stone surface plates using granite. And iron with high rigidity was used for the foundation surface plate (G).
  • the laser device used in Example 1 is an excimer laser with an oscillation wavelength of 248 [nm].
  • the spatial distribution of the emitted laser light is approximately 8 ⁇ 24 [mm], and the beam divergence angle is 1 ⁇ 3 [mrad]. Both are notation of (vertical x horizontal), and numerical values are FWHM.
  • excimer lasers There are various specifications of excimer lasers, and there are differences in output, repetition frequency, beam size, beam divergence angle, etc.
  • the emitted laser light is vertically elongated (the vertical and horizontal are reversed). ), but there are many excimer lasers that can be used in this embodiment by adding, omitting, or changing the design of the optical system. Also, depending on the size of the laser device, there are cases where it is installed on a surface plate different from the base on which the stage group of the lift device is generally installed.
  • the emitted light from the excimer laser enters the telescope optical system and propagates to the zoom homogenizer ahead.
  • the zoom homogenizer is arranged on the first platen (G11) so that its optical axis is along the X-axis.
  • the laser light immediately before entering this zoom homogenizer is adjusted by a telescope optical system so that it becomes roughly parallel light.
  • the size is approximately 25 ⁇ 25 [mm] (Z ⁇ Y).
  • Each lens array (1, 2) constituting the zoom homogenizer in this embodiment is a combination of cylindrical lens arrays at right angles.
  • the laser light enters the first lens array (1) in the first stage and passes through an array mask (10) placed near the focal position of the second lens array (2) in the rear stage on the light source side while condensing. , the second lens array (2), and the condenser lens (3).
  • Example 1 an array mask in which 0.75 [mm] square openings are arranged in a matrix was used.
  • FIG. 8A A conceptual diagram thereof is shown in FIG. 8A.
  • FIG. 8B the positional relationship between the array mask (10) placed immediately before the fly-eye type lens array (1) and its aperture (101) is conceptually illustrated to show the state of facing the lens array. is shown.
  • the state of the array mask used in this example is shown in FIG. 8B.
  • Fig. 9 shows a conceptual diagram of the arrangement of each optical element from the zoom homogenizer to the donor substrate.
  • the detailed arrangement position is a matter of design.
  • the laser light emitted from the zoom homogenizer is scanned by a two-axis scanning mirror (4) and its control device, propagates to a field lens (5), and forms an image on a photomask (6).
  • the image plane on the photomask (6) is the infinity correction optical system composed of the second lens array (2) and the condenser lens (3) with the aperture (101) of the array mask (10) as the object plane. image plane.
  • a laser beam is scanned by a scanning mirror (4), propagated toward one selected aperture (61) on the photomask (6), and imaged in an irradiation area of a predetermined size.
  • FIG. 10A is the beam profile image. This predetermined size is the boundary (periphery/outer edge) of the energy distribution that has a threshold value or more at which a reaction is induced when an unintended irradiation target is irradiated through an unselected adjacent photomask opening. , which is approximately 1 [mm] (FWHM) in this embodiment.
  • FIG. 10B also shows the beam profile on the photomask (6) when the array mask (10) having a circular opening is used.
  • FIG. 11 shows a conceptual diagram thereof.
  • the laser light passes through the non-chrome-plated window portion (61) shown in white and is blocked by the chrome-plated colored portion (62).
  • the size of the apertures is 60 ⁇ 100 [ ⁇ m], and 74 apertures are arranged at a pitch of 600 [ ⁇ m] in the X-axis direction, and 25 apertures are arranged at the same pitch in the Y-axis direction, for a total of 1850 apertures.
  • the surface to be plated with chromium is the laser light emitting side, and the incident side is coated with an antireflection film for 248 [nm]. Further, instead of chromium plating, aluminum vapor deposition or dielectric multilayer film can be used.
  • the photomask (6) and the array mask (10) are respectively fixed to dedicated mounts (not shown), and the mounts move in the X-, Y-, and Z-axis directions respectively.
  • V-axis, and R-axis ( ⁇ -axis) which is the rotation axis (around the optical axis) in the YZ plane
  • TV-axis that adjusts the tilt with respect to the V-axis, and TU-axis that adjusts the tilt with respect to the U-axis. have a mechanism
  • the laser beam (optical axis) passing through the zoom homogenizer scans the apertures on the photomask at high speed by the scanning mirror (4), and the excimer laser device scans the optical axis to the position of each aperture. Pulses are oscillated in synchronization with the timing.
  • FIG. 12 is a beam profile image of the projected laser light.
  • the minute elements on the donor substrate irradiated with the scanning laser light are lifted and mounted in a matrix on the opposing receptor substrate one after another at a pitch of 450 [ ⁇ m].
  • the number of lifted irradiation objects of 30 ⁇ 60 [ ⁇ m] corresponds to the above-mentioned 74 ⁇ 25 openings on the photomask, and the lift range is about 33 ⁇ 11 [mm].
  • the reduction projection lens (8) is telecentric on the image side, and in addition to adjustment by means of a Z-axis drive stage that holds it, a function for adjusting the donor substrate in the Z-axis direction (Z-axis stage (Zd)) is added. , can also be configured to support imaging on the light absorbing layer. However, it is necessary to consider the decrease in lift position accuracy due to the increased weighted load on the donor stage.
  • a confocal beam profiler having a plane in a conjugate relationship with the mask surface and the reduction projection lens as the imaging surface is used.
  • BP confocal beam profiler
  • a laser beam is scanned toward all the openings on the photomask (6), and the laser beam is sequentially irradiated toward the minute elements arranged on the donor substrate whose imaging position is adjusted.
  • 1850 microelements corresponding to the numerical aperture on the photomask are mounted on the same number of planned lift positions on the receptor substrate.
  • the 1,850 lift regions are divided into three parts (A to C) in the X-axis direction and nine parts (1 to 9) in the Y-axis direction, for a total of 27 parts (A1 to A9, B1 to B9, C1 to C9) corresponds to one area. Its size is about 33 ⁇ 11 [mm] determined by the scanning angle of the scanning mirror and the aperture diameter of the reduction projection lens.
  • the donor and receptor substrates are moved to the next lift area.
  • the movement is 33.3 [mm] in the X-axis direction and 11.25 [mm] in the Y-axis direction.
  • 1,850 lifts are performed again, and thereafter, this is repeated over the entire planned lift positions, completing the mounting of 49,950 microelements from the donor substrate to the receptor substrate.
  • microelements are mounted without defects at a density of 1/2 times the pitch of the intended lift position on the receptor substrate. It can be mounted on the receptor substrate.
  • the predetermined size (DP) of the irradiation area of the laser light on the photomask is indicated, for example, by a dashed line in FIG. As shown, if four openings can be sized to be collectively irradiated, the time required for mounting can be reduced to about 1/4.
  • the lift along the mounting area of the microelements is used.
  • an area the hatched area in the figure
  • scanning the scanning range of the scanning mirror in accordance with this area, it is also possible to lift minute elements positioned at every corner.
  • the above is a specific example of the lifting device and the mounting method for mounting the minute elements on the donor substrate onto the opposing receptor substrate.
  • a 6-inch receptor substrate to be repaired (hereinafter simply referred to as “receptor substrate” in this second embodiment) was corrected by retransfer to a defective portion corresponding to about 1%. Shown with a lifting device.
  • about 1% of microelements used for retransfer (correction) arranged on a 6-inch donor substrate for correction hereinafter simply referred to as "donor substrate” in this embodiment). Assume that non-element locations (and defective locations) are distributed.
  • the microelements are mounted on the receptor substrate at a pitch of 50 ⁇ m, which is 1/4 times the design mounting pitch of the microelements mounted on the receptor substrate. arrayed, totaling more than 3.9 million. Therefore, the interval between adjacent microelements is 10 [ ⁇ m].
  • the general configuration of the scanning reduction projection optical system mounted on the lift apparatus of the second embodiment and the structure of the apparatus are the same as those of the first embodiment, but the specifications of each optical element and their arrangement position are determined by these. Beam profile shape is a matter of design.
  • the excimer laser light having the irradiation area size which is pulse-oscillated in synchronization with the operation of the scanning mirror (4), is irradiated to the 200 [ ⁇ m] square opening on the photomask (6). After passing through this aperture, the laser light passes through an image-side telecentric projection lens (8) with a reduction ratio of 1/4, and is directed from the back surface of the donor substrate to the microelements arranged thereon with a distance of 10 [ ⁇ m]. Microelements adjacent to each other at intervals are irradiated without interfering with each other.
  • the irradiated pulsed laser light forms an image on the surface (lower surface) of the donor substrate at a 50 [ ⁇ m] angle, which is one size larger than the microelement size, induces a reaction, and causes a microscopic image at that position.
  • the device is lifted toward the non-device location on the receptor substrate.
  • the position information D includes minute elements recognized as defective that should not be used for retransfer, and non-element locations that are not mounted in the first place. Their positional coordinates are calculated from adjacent microelements and obtained as "defective position information D". The same applies to the "defective position information R" in the position information R.
  • the design pitch of the microelements arranged on the donor substrate is 1/4 times the design pitch of the microelements mounted on the receptor substrate. have errors between donor substrates and even between receptor substrates. Therefore, this error is calculated from the position information D and R in advance.
  • the positional information R is the design pitch
  • the value of the donor substrate pitch error ⁇ Pi with respect to the pitch is +0.0075 [ ⁇ m].
  • Dividing Step A region on a 6-inch donor substrate is divided into 27 divided areas (“divided areas D”) as in the first embodiment. As shown in FIG. 14, each area is 33 ⁇ 11 [mm], and each divided area is shown as A1 to A9, B1 to B9, and C1 to C9 in the figure for convenience.
  • the receptor substrate is similarly divided into 27 "divided areas R", and the lift is performed between the opposed divided areas.
  • the size of the divided area D is a design item determined by the effective aperture diameter of the reduction projection lens, the size of the photomask limited by other specifications, and the reduction projection magnification. .
  • the permissible range of the cumulative error amount obtained by multiplying the 660 (-1) irradiation objects in the long axis (X-axis) direction of the irradiation target contained in the divided area D by the aforementioned error ⁇ Pi is ⁇ It was set to 5 [ ⁇ m].
  • this allowable range is such that the laser light that has passed through the opening (61) on the photomask (6) reaches the donor substrate.
  • the 50 [ ⁇ m] square (dashed line in the figure), which is the size to be imaged on the upper 40 [ ⁇ m] microelement, is the entire surface of the microelement (solid line) at the rightmost position where the accumulated error amount is maximum. is arbitrarily set based on the limit of irradiation.
  • the 40 [ ⁇ m] square of the two-dot chain line in the figure is the design mounting position of the minute element on the donor substrate, and is located in the center of the imaging size of the dashed line.
  • any minute element mounted in the divided area D has a cumulative error amount within the allowable range (659 ⁇ 0.0075 ⁇ 4.94) with respect to the design position there. Therefore, there is no need to set a reduced "correction division area D" in this division step.
  • FIG. 16 shows the situation.
  • it is an image of observing the receptor substrate through the donor substrate.
  • a partial area of an array of microelements arranged on a donor substrate is shown.
  • the vicinity of the upper left surrounded by the dashed line in the divided area A1 is shown in an enlarged manner, and the state of arrangement of microelements on the donor substrate positioned within this area is illustrated.
  • the positions of non-element locations where defective elements have been removed from the receptor substrate in advance by the removal step are indicated by white rectangles (Mr), and likewise the positions of microelements normally mounted on the receptor substrate are indicated.
  • the black squares (Er) indicate the positions of the microelements on the donor substrate, which is 16 times denser than the receptor substrate, and the gray squares (Ed). (Ed overlapping Er and Mr is not shown.)
  • the pitch of the microelements Ed on the donor substrate is 50 [ ⁇ m]
  • the pitch of the microelements Er on the receptor substrate is 200 [ ⁇ m].
  • (3-1) Collate the defect position information D and the defect position information R for each board, and confirm in advance the position where the non-element location (Mr) overlaps the defect element position (Md).
  • the presence or absence of overlap to be confirmed here is the position where the ⁇ row group aligned in the X-axis direction of the donor substrate shown in the figure and the ⁇ row group aligned in the Y-axis direction intersect (a total of 245,025 points/substrate). means an overlap of substrate units (all 27 areas) in .
  • the selection step is to select the micro-element location (Ed) on the donor substrate relative to the no-element location (Mr). If duplication is confirmed, it will be described later.
  • the column group to be collated is changed from ⁇ to ⁇ ' column group or from ⁇ Change to the ⁇ ' column group, and in the combination of the column group after the change (intersection point of the changed column group), collate by substrate unit as in (3-1) or (3-2) above, and there is no duplication.
  • the microelement position (Ed) on the donor substrate corresponding to the no-element location (Mr) is selected based on the combination.
  • the substrate is moved according to the combination of the row groups.
  • FIG. 17 shows the state of the position between the substrates at the time of retransfer between the divided areas (A1).
  • the next area A2 is subjected to similar collation, and the non-overlapping column group is determined. Modify area A2 of the receptor substrate in combination. Thereafter, donor A3 and receptor A3, donor A4 and receptor A4, etc. are repeated. For example, if there is an overlap only between the divided areas B5, and there is no overlap for each substrate except for this area, it is not necessary to collate the areas before and after.
  • FIG. 18 shows the situation.
  • the retransfer is performed at the intersection position of the ⁇ ''' group and the ⁇ ''' group, for example.
  • the transfer process may be performed regardless of whether or not the defective position information overlaps.
  • options such as entrusting it to the second and subsequent corrections using a different donor substrate will also arise.
  • it is possible to perform matching for each board and matching for each divided area in a timely manner based on takt time simulation. It is also possible to define each collation method with the shortest tact time and a combination of ranges thereof.
  • each divided area R that is, each numerical aperture (165 ⁇ 55) on the photomask is scanned at once with a scanning mirror having a scanning speed of about 30/sec.
  • the time required to correct (about 90 locations) per divided area is about 3 seconds, which is the time to perform this on 27 divided areas. Even if the movement time of each board for moving the divided area is taken into account, the time required from the time the board is set until the correction is completed is approximately 90 seconds.
  • a scanning reduction projection optical system used in a laser processing apparatus that irradiates a laser beam toward an irradiation target to induce a reaction comprising an infinity correction optical system, a scanning mirror, and a photomask. a scanning reduction projection optical system.
  • a laser processing apparatus that utilizes irradiating a laser beam toward an object to be irradiated to induce a reaction the laser having a laser device that oscillates the laser beam, an infinity correction optical system, and a scanning mirror. processing equipment.
  • a laser processing method for irradiating an object to be irradiated with a laser beam to induce a reaction wherein the irradiation is performed using a scanning reduction projection optical system having an infinity correction optical system, a scanning mirror and a photomask.
  • a lift method for irradiating a donor substrate provided with an irradiation target with a laser beam and moving the irradiation target from the donor substrate to a receptor substrate comprising an infinity correction optical system and a scanning mirror. and a scanning reduction projection optical system having a photomask to irradiate the object with a laser beam.
  • a method for manufacturing a substrate mounted with an irradiation target wherein a donor substrate provided with an irradiation target is irradiated with a laser beam, and the irradiation target is moved from the donor substrate to a receptor substrate
  • a method of manufacturing a substrate on which an object to be irradiated comprising irradiating the object with a laser beam using a scanning reduction projection optical system having an infinity correcting optical system, a scanning mirror, and a photomask.
  • a method for mounting a micro-element characterized by irradiating a laser beam toward the film or the micro-element using a scanning reduction projection optical system having an infinity correction optical system, a scanning mirror and a photomask.
  • a method of removing a defective portion by irradiating a laser beam onto the defective portion of a donor substrate to remove the defective portion from the donor substrate comprising an infinity correction optical system, a scanning mirror, and A method of removing a defective portion, comprising irradiating the defective portion with a laser beam using a scanning reduction projection optical system having a photomask.
  • a retransfer method comprising: irradiating a laser beam onto an object to be irradiated provided on the donor substrate to move the object to the defective region of the receptor substrate.
  • a laser processing method in which a laser beam is directed at an object to be irradiated to induce a reaction, wherein the laser beam is scanned by a scanning mirror and focused on a photomask as an image plane of an infinity correction optical system.
  • a laser processing method wherein the laser beam imaged and passed through the photomask is reduced and projected onto the object to be irradiated.
  • a method for manufacturing a substrate mounted with an irradiation target wherein a donor substrate provided with an irradiation target is irradiated with a laser beam, and the irradiation target is moved from the donor substrate to a receptor substrate, The laser beam is scanned by a scanning mirror, an image is formed on a photomask as an image plane of an infinity correction optical system, and the laser beam passing through the photomask is reduced and projected onto the object to be irradiated.
  • a method for manufacturing a board on which an irradiation object to be irradiated is mounted.
  • a scanning reduction projection optical system for use in a laser processing apparatus that irradiates an object to be irradiated with a laser beam to induce a reaction A scanning reduction projection optical system having a first lens array, a second lens array, a scanning mirror and a photomask.
  • the lens element is fly-eye type, cylindrical type or spherical type.
  • the scanning reduction projection optical system according to (26), wherein the apertures forming the aperture group are circular, elliptical, square, or rectangular.
  • (31) A scanning reduction projection optical system for use in a laser processing apparatus that irradiates an object to be irradiated with a laser beam to induce a reaction, A scanning reduction projection optical system that is telecentric only on the image side.
  • a method of removing a defective portion by irradiating a laser beam onto the defective portion of a donor substrate having the defective portion to remove the defective portion from the donor substrate comprising: A method of removing a defective portion, comprising irradiating the defective portion with a laser beam using a scanning reduction projection optical system having a galvanometer scanner and a photomask. (33) The method of removing defective portions according to (32), wherein the photomask has circular, elliptical, square or rectangular openings. (34) The method of removing a defective portion according to (32) or (33), wherein the photomask has a region in which openings are arranged in a matrix.
  • a retransfer method of irradiating a donor substrate provided with an irradiation target with a laser beam and moving the irradiation target from the donor substrate to a receptor substrate comprising:
  • the receptor substrate has an area in which the object to be irradiated is mounted in advance and a defective area in which the object to be irradiated is not mounted in the planned mounting area,
  • a laser beam is applied to an irradiation target provided on the donor substrate by using a scanning reduction projection optical system having a galvanometer scanner and a photomask, and the object is moved to the defective region of the receptor substrate.
  • a lift method for irradiating a donor substrate provided with an irradiation target with a laser beam and moving the irradiation target from the donor substrate to a receptor substrate comprising: The irradiation target provided on the donor substrate has a defective region, A lift method comprising: irradiating a laser beam onto an irradiation object other than the defective region by using a scanning reduction projection optical system having a galvanometer scanner and a photomask, and moving the object to the receptor substrate.
  • Each component in the many embodiments described above can be subdivided, and the subdivided components can be introduced into (1) to (38) individually or in combination.
  • usage and layout of various lenses, types of laser light, various configurations and control methods in laser processing equipment, types and shapes of photomasks, shapes and layouts of openings, types and shapes of irradiation targets, laser lift-off Reaction mechanisms, optical system mechanisms, and the like are typical examples.

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PCT/JP2021/027082 2021-07-20 2021-07-20 走査型縮小投影光学系及びこれを用いたレーザ加工装置 Ceased WO2023002555A1 (ja)

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US18/576,704 US20240246172A1 (en) 2021-07-20 2021-07-20 Scanning reduced projection optical system and laser processing apparatus using the same
PCT/JP2021/027082 WO2023002555A1 (ja) 2021-07-20 2021-07-20 走査型縮小投影光学系及びこれを用いたレーザ加工装置
KR1020247000093A KR20240031297A (ko) 2021-07-20 2021-07-20 주사형 축소 투영 광학계 및 이것을 이용한 레이저 가공 장치
EP21950909.8A EP4375002A4 (en) 2021-07-20 2021-07-20 SCANNING-TYPE REDUCTION PROJECTION OPTICAL SYSTEM AND LASER MACHINING APPARATUS USING SAME
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JP2022096305A JP7255000B2 (ja) 2021-07-20 2022-06-15 不良箇所の除去方法、リフト方法、フォトマスク及びリフトシステム
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WO2024219462A1 (ja) * 2023-04-19 2024-10-24 信越エンジニアリング株式会社 レーザ照射装置、レーザ加工装置、レーザ加工方法、マスクの設置方法、レーザ加工装置の設置方法及びマスク
WO2026048604A1 (ja) * 2024-08-28 2026-03-05 沖電気工業株式会社 レンズユニット、受光装置及び読取装置

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