WO2022230845A1 - 基板処理方法および基板処理装置 - Google Patents

基板処理方法および基板処理装置 Download PDF

Info

Publication number
WO2022230845A1
WO2022230845A1 PCT/JP2022/018806 JP2022018806W WO2022230845A1 WO 2022230845 A1 WO2022230845 A1 WO 2022230845A1 JP 2022018806 W JP2022018806 W JP 2022018806W WO 2022230845 A1 WO2022230845 A1 WO 2022230845A1
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
liquid
film
plasma
film thickness
Prior art date
Application number
PCT/JP2022/018806
Other languages
English (en)
French (fr)
Japanese (ja)
Inventor
秀一 柴田
岳明 石津
基 西出
健司 小林
Original Assignee
株式会社Ｓｃｒｅｅｎホールディングス
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 株式会社Ｓｃｒｅｅｎホールディングス filed Critical 株式会社Ｓｃｒｅｅｎホールディングス
Priority to CN202280030580.1A priority Critical patent/CN117242546A/zh
Priority to KR1020237039224A priority patent/KR20230167434A/ko
Publication of WO2022230845A1 publication Critical patent/WO2022230845A1/ja

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring

Definitions

  • the present invention relates to a technique for processing a substrate using a processing liquid, for example, a substrate processing method and a substrate processing apparatus for removing a resist film on a substrate surface with a processing liquid.
  • a treatment liquid For the purpose of surface treatment of various substrates such as semiconductor substrates and glass substrates, it is widely practiced to treat the substrates with a treatment liquid.
  • a mixed solution of concentrated sulfuric acid and hydrogen peroxide solution (Sulfuric Acid Hydrogen Peroxide Mixture; SPM) is used as the processing solution.
  • SPM sulfuric Acid Hydrogen Peroxide Mixture
  • the inventor of the present application has obtained knowledge that the removal efficiency of the resist film is improved by causing the active species generated by the plasma generation source to act on the processing liquid in the process of removing the resist film.
  • the resist film can be stripped and removed even when sulfuric acid is used as the treatment liquid instead of the mixture of concentrated sulfuric acid and hydrogen peroxide solution. It is presumed that this is because active species generated by the plasma generation source act on sulfuric acid to generate Caro's acid, which has the action of removing the resist film.
  • the substrate processing method in order to achieve the above object, there are steps of: holding a substrate in a horizontal posture; forming a liquid film of the processing liquid on the upper surface of the substrate; detecting a film thickness of the liquid film; and arranging a plasma generation source so as to face the liquid film, and irradiating the liquid film with plasma from the plasma generation source.
  • a substrate holding section that holds a substrate in a horizontal position and rotates it around a vertical axis; and the substrate held by the substrate holding section.
  • a processing liquid supply unit for supplying a processing liquid to the upper surface of the substrate; a predetermined amount of the processing liquid is supplied from the processing liquid supply unit;
  • a control unit for forming a liquid film of the liquid, a film thickness measurement unit for measuring the film thickness of the liquid film, a reactor for generating plasma, a position facing the reactor close to the upper surface of the substrate, the a moving mechanism for moving between a standby position spaced apart from the upper surface of the substrate, the control unit having a film thickness calculation unit for calculating the film thickness based on a signal from the film thickness measurement unit;
  • the film thickness calculation result is a predetermined target value
  • the reactor is positioned at the facing position to irradiate the liquid film on the upper surface of the substrate with plasma.
  • the chemical reaction involved in substrate processing can be promoted by activating the processing liquid by plasma irradiation.
  • the thickness of the liquid film greatly affects the processing quality, so it is necessary to appropriately control the film thickness according to the processing content. Specifically, it is necessary to sufficiently supply the chemical species in the processing liquid that contribute to the processing of the substrate, and from this point of view, it is preferable that the amount of the liquid forming the liquid film is large. On the other hand, the liquid film must be thin enough to allow active species generated by plasma lighting to reach the substrate surface.
  • a step of detecting the film thickness after forming a liquid film on the upper surface of the substrate by supplying the processing liquid while rotating the substrate in a horizontal posture is provided. Then, if the film thickness is appropriate, plasma irradiation is performed. By doing so, the substrate can be processed satisfactorily with the processing liquid. Moreover, since it is sufficient to cover the substrate with a thin liquid film and it is not necessary to continuously supply the processing liquid, the consumption of the processing liquid can be reduced as a result.
  • a liquid film of the processing liquid is formed to cover the substrate, and plasma irradiation is performed after confirming that the film thickness is appropriate. Therefore, the processing liquid can be activated and the processing can be performed satisfactorily.
  • FIG. 1 is a diagram showing a schematic configuration of an embodiment of a substrate processing apparatus according to the present invention
  • FIG. 4 is a flow chart showing substrate processing in this embodiment. It is a figure which shows typically operation
  • FIG. 4 is a diagram schematically showing the principle of resist removal processing by plasma lighting;
  • FIG. 4 is a diagram schematically showing the principle of resist removal processing by plasma lighting;
  • FIG. 4 is a plan view illustrating another form of the plasma reactor;
  • FIG. 4 is a plan view illustrating another form of the plasma reactor;
  • FIG. 1 is a diagram showing a schematic configuration of one embodiment of a substrate processing apparatus according to the present invention.
  • This substrate processing apparatus 1 is an apparatus for performing wet processing using a processing liquid on various substrates such as semiconductor substrates and glass substrates. For example, the apparatus 1 can be applied to remove a photoresist film formed on the surface of a semiconductor substrate.
  • the substrate processing apparatus 1 includes an upper unit 20, a lower unit 30, a liquid supply unit 40, a film thickness measurement unit 50, and a control unit 90 for controlling the operation of the entire apparatus. and
  • the lower unit 30 has a spin chuck mechanism that holds the substrate S.
  • the lower unit 30 is provided with a planar spin base 31 having a planar size substantially the same as the planar size of the substrate S.
  • a plurality of chuck pins 32 are arranged on the upper surface of the spin base 31 at positions near the outer periphery. The chuck pins 32 contact the substrate S to hold the substrate S in a horizontal posture.
  • a rotation support shaft 33 extending vertically is coupled to the lower surface of the spin base 31 .
  • the rotary support shaft 33 is rotatably supported around a vertical axis by a rotary drive mechanism 34 .
  • the rotation drive mechanism 34 is fixed to the bottom surface of the processing chamber 10 and operates according to a control command from a rotation control section 98 provided in the control unit 90 to rotate the spin base 31 at a predetermined rotation speed.
  • a rotation control section 98 provided in the control unit 90 to rotate the spin base 31 at a predetermined rotation speed.
  • the one-dot chain line indicates the axis of rotation of the substrate S, and when the substrate S is circular, it is preferable to align the center with the center of rotation.
  • a splash guard 35 is arranged so as to surround the side of the spin base 31 .
  • the splash guard 35 ascends and descends according to a control command from an elevation control section 99 provided in the control unit 90 .
  • the splash guard 35 surrounds the substrate S when the upper end of the splash guard 35 is raised above the substrate S.
  • the splash guard 35 receives and recovers the liquid such as the processing liquid that scatters from the upper surface of the substrate to the surroundings during substrate processing, which will be described later.
  • the upper end of the splash guard 35 is lowered below the substrate S and the substrate S is exposed, it is possible to receive access from, for example, a substrate transport hand from the outside.
  • the upper unit 20 is arranged above the lower unit 30 .
  • the upper unit 20 has a flat plate member 21 having a planar size slightly larger than the planar size of the substrate S. As shown in FIG. That is, the area of the plate member 21 is larger than the area of the substrate S, and the plate member 21 covers the entire substrate S in plan view when the plate member 21 and the substrate S are stacked.
  • a shaft 22 is coupled to the top of the plate member 21 , and the shaft 22 is supported vertically by an elevating mechanism 23 fixed to the ceiling surface of the processing chamber 10 .
  • the plate member 21 moves up and down by operating the lifting mechanism 23 in response to a control command from the lifting control section 91 provided in the control unit 90 . As a result, the plate member 21 is positioned at a waiting position shown in FIG. move between
  • a plasma reactor 24 that functions as a plasma generation source under atmospheric pressure is attached to the lower surface of the plate member 21, that is, the surface facing the substrate S.
  • the plasma reactor 24 has a flat plate shape with a planar size equal to or greater than the planar size of the substrate S, and faces the entire upper surface of the substrate S. As shown in FIG. That is, the plasma reactor 24 has an area larger than that of the substrate S, and covers the entire substrate S in plan view from above or below. For example, if the substrate S is circular, a disk-shaped plasma reactor 24 having a larger diameter than the substrate S can be used.
  • the plasma reactor 24 receives power from a plasma power source 92 provided in the control unit 90 to turn gas in the vicinity into plasma.
  • a gas nozzle 25 is provided on the lower surface of the plate member 21 at the peripheral portion outside the plasma reactor 24 .
  • the gas nozzle 25 is connected to the gas supply section 93 of the control unit 90 and discharges the gas supplied from the gas supply section 93 .
  • the gas discharge direction is the direction along the lower surface of the plasma reactor 24 , more specifically, the substantially horizontal direction and the direction toward the rotation axis of the substrate S. This makes it possible to control the atmosphere in the plasma generation space immediately below the plasma reactor 24 .
  • At least one gas nozzle 25 is sufficient, but it is more preferable that a plurality of gas nozzles 25 be provided at equal angular intervals with respect to the rotation axis of the substrate S. Further, as will be described later, there are cases where gas supply is unnecessary depending on the object to be processed, and if only such cases are assumed, the gas nozzle can be omitted.
  • At least one liquid supply unit 40 is provided on the side of the lower unit 30 .
  • the liquid supply unit 40 has a rotating mechanism 41 having a movable shaft 42 that rotates about a vertical axis, an arm 43 attached to the movable shaft 42 , and a liquid nozzle 44 attached to the tip of the arm 43 .
  • the liquid nozzle 44 selectively ejects the processing liquid supplied from the processing liquid supply section 94 provided in the control unit 90 and the rinsing liquid supplied from the rinsing liquid supply section 95 .
  • one set of liquid supply unit 40 handles two types of liquid, but a liquid supply unit may be provided for each type of liquid. Alternatively, a plurality of nozzles may be provided on one arm, and the nozzles may be selectively used for each type of liquid.
  • the rotation mechanism 41 rotates according to a control command from the rotation control section 96 of the control unit 90 .
  • the liquid nozzle 44 moves between a processing position positioned above the substrate S to supply liquid to the upper surface of the substrate S and a standby position retreated to the side of the substrate S.
  • the liquid nozzle 44 can be scanned and moved along the upper surface of the substrate S while ejecting the liquid from the liquid nozzle 44 .
  • a film thickness measurement unit 50 is further provided on the side of the lower unit 30 .
  • the film thickness measurement unit 50 optically measures the film thickness of the liquid film formed on the substrate S as described later.
  • the film thickness measurement unit 50 includes a rotating mechanism 51 having a movable shaft 52 that rotates about a vertical axis, an arm 53 attached to the movable shaft 52, and a sensor attached to the tip of the arm 53. 54.
  • the sensor 54 irradiates the object to be measured with light, receives the reflected light, and outputs a signal corresponding to the received light to the film thickness calculator 97 of the control unit 90 .
  • a film thickness calculator 97 detects the film thickness based on the output signal from the sensor 54 .
  • a detection method for example, a method using various optical measurement principles such as an optical interference method and a reflectance spectroscopy method can be applied. Any method other than the optical method may be used as long as the method can measure the film thickness of the liquid film in a short time without contact.
  • the rotation mechanism 51 rotates according to a control command from the rotation control section 96 of the control unit 90 .
  • the sensor 54 moves between a measurement position located above the substrate S and a standby position retracted to the side of the substrate S. As shown in FIG. Also, the sensor 54 can be moved along the upper surface of the substrate S for scanning.
  • control unit 90 of the substrate processing apparatus 1 is provided with a process control section 900 that controls each section of the apparatus according to a processing recipe established in advance to execute predetermined substrate processing.
  • the process control unit 900 has a CPU (Central Processing Unit) and a storage unit, and the CPU executes a control program stored in advance in the storage unit, thereby realizing the substrate processing described below.
  • CPU Central Processing Unit
  • the substrate processing apparatus 1 can be used for various purposes.
  • a resist removal process for stripping and removing a resist film formed on the surface of a semiconductor substrate will be described.
  • the resist film is an organic substance
  • the sulfuric acid which is the processing liquid
  • the sulfuric acid is activated by plasma irradiation.
  • plasma irradiation it is possible to obtain a resist removing effect equivalent to the treatment using SPM without using hydrogen peroxide solution.
  • the resist is removed by forming a liquid film of the processing liquid on the upper surface of the substrate S and irradiating the film with plasma.
  • FIG. 2 is a flowchart showing substrate processing in this embodiment.
  • 3A to 3C and 4A to 4D are diagrams schematically showing the operation of each part in this processing.
  • the entire device is initialized (step S101).
  • the plate member 21 of the upper unit 20, the liquid nozzle 44 of the liquid supply unit 40, and the sensor 54 of the film thickness measurement unit 50 are all at standby positions. be. Neither gas ejection from the gas nozzle 25 nor liquid ejection from the liquid nozzle 44 is performed. Also, the splash guard 35 is in the lower position, and the upper part of the spin base 31 is exposed.
  • the substrate S to be processed is received, and appropriate preprocessing is performed (step S102). Specifically, the substrate S transported by an external transport robot is loaded into the processing chamber 10 via a shutter (not shown). The substrate S is placed on the spin chuck 31 in a horizontal posture with the surface to be processed on which the resist film to be removed is formed facing upward.
  • the content of the pretreatment is arbitrary, it is possible to apply, for example, an etching treatment or a cleaning treatment using a chemical solution, followed by a rinse treatment. It should be noted that the substrate S may be carried into the substrate processing apparatus 1 after being pretreated outside. That is, execution of the pretreatment in the substrate processing apparatus 1 may be omitted.
  • the substrate processing method according to the present invention is executed. That is, first, a liquid film is formed by the treatment liquid (step S103).
  • the splash guard 35 moves upward to surround the substrate S, as shown in FIG. 3B.
  • the liquid nozzle 44 of the liquid supply unit 40 is positioned above the rotation center of the substrate S, that is, on the rotation axis of the substrate S indicated by the dashed line.
  • the treatment liquid Lq is discharged from the liquid nozzle 44 .
  • the total amount of liquid to be ejected is predetermined. Specifically, a target value for the film thickness of the liquid film formed on the substrate S is determined in advance. Then, the amount obtained by adding a certain margin to the product of the target value and the surface area of the substrate S is taken as the supply liquid amount.
  • the liquid nozzle 44 is returned to the standby position.
  • the spin base 31 rotates at a predetermined speed for a certain period of time, it stops rotating.
  • the substrate S rotates, and the treatment liquid spreads over the entire upper surface of the substrate S due to the action of centrifugal force.
  • part of the processing liquid is shaken off from the peripheral portion of the substrate S.
  • the shaken-off processing liquid is received by the splash guard 35 and recovered by a recovery unit (not shown). After the substrate S finishes rotating, the splash guard 35 descends.
  • the processing liquid that finally remains on the substrate S forms a puddle-shaped liquid film LP.
  • the thickness of the liquid film is determined by the rotation speed of the substrate S, the rotation acceleration and the duration of rotation.
  • the optimum thickness of the liquid film varies depending on the surface condition of the substrate S, specifically the type and thickness of the resist film, the coverage of the substrate surface, etc., and also varies depending on the type and concentration of the processing liquid. Therefore, it is preferable that the target value of the film thickness is appropriately changed and set according to the purpose of the treatment.
  • parameters such as the supply amount of the processing liquid, the rotation speed of the substrate S, the rotation acceleration, and the duration of rotation are also appropriately changed and set.
  • the film thickness of the liquid film LP greatly affects the process quality.
  • a preferred film thickness is generally on the order of several hundred micrometers. Therefore, the film thickness of the formed liquid film LP is measured (step S104).
  • the sensor 54 of the film thickness measurement unit 50 moves above the substrate S, irradiates the liquid film LP on the substrate S with light, and receives the reflected light. Based on the output signal from the sensor 54, the film thickness calculator 97 calculates the film thickness. As indicated by dotted arrows in FIG. 3C, it is preferable that the sensor 54 scans along the upper surface of the substrate S and measures the film thickness at a plurality of locations. After the film thickness measurement, the sensor 54 is returned to the standby position.
  • the target value of the film thickness may be set to a single value or defined as a certain range.
  • the film thickness target value is stored in the storage unit of the process control unit 900 .
  • the CPU of the process control unit 900 acquires the film thickness target value from the storage unit and applies it to the film thickness determination.
  • the target value of the film thickness different values may be stored depending on the type of substrate, the type of processing liquid, or the content of processing with the processing liquid. When a plurality of types of target values are stored in the storage unit, the target values are associated with the type of substrate, the type of processing liquid, or the content of processing with the processing liquid.
  • step S105 If the film thickness is not within the appropriate range (NO in step S105), the process returns to step S103 and liquid film formation is performed again. At this time, at least one of the parameters related to the film thickness, that is, the supply amount of the treatment liquid, the rotation speed of the substrate, the duration of rotation of the substrate, and the rotation acceleration of the substrate, may be changed from the previous liquid film formation. . By changing the liquid film forming conditions in this way, it is possible to optimize the film thickness of the re-formed liquid film.
  • step S106 is executed. Specifically, as indicated by solid arrows in FIG. 4A , gas discharge is started from the gas nozzle 25 and a high voltage for plasma lighting is applied from the plasma power source 92 to the plasma reactor 24 . Further, as indicated by the dotted line arrow, the plate member 21 is lowered from the standby position to the facing position, and the plasma reactor 24 is positioned at a position facing the upper surface of the substrate S in close proximity. The two eventually approach each other to a distance of several millimeters. As a result, as shown in FIG. 4B, the liquid film LP on the substrate S is irradiated with the plasma P generated in the vicinity of the lower surface of the plasma reactor 24 by the voltage application (step S107).
  • the atmosphere in the gap space therebetween can be controlled.
  • atmosphere control for promoting plasma generation it is preferable to supply a gas containing a rare gas such as helium or argon.
  • a mixed gas of oxygen and rare gas can be discharged from the gas nozzle 25 .
  • the apparatus may perform good processing using only oxygen in the atmosphere. In such a case, gas discharge from the gas nozzle 25 may not be performed. Further, if the apparatus performs only processes that do not require gas ejection, the gas nozzle itself can be omitted.
  • the plasma reactor 24 rises together with the plate member 21 (step S108), followed by rinsing (step S109). That is, as shown in FIG. 4C, the splash guard 35 rises, and an appropriate rinse liquid Lr, such as de-ionized water (DIW), is supplied from the rinse liquid supply unit 95 to the liquid nozzle 44 of the liquid supply unit 40. supplied to the substrate S through the As a result, substrate processing with the processing liquid is stopped. The substrate S rotates at a predetermined rotational speed, and the rinse liquid Lr is shaken off from the peripheral portion of the substrate S.
  • DIW de-ionized water
  • step S110 If the processing recipe designates repetition of steps S103 to S109 (YES in step S110), the process returns to step S103 and the above processing is repeated.
  • the resist film can be removed more reliably by repeatedly forming the liquid film and irradiating the plasma.
  • step S111 When the repeated process is no longer necessary (NO in step S110), appropriate post-processing is performed (step S111), and finally the drying process for drying the substrate S is performed (step S112).
  • the content of the post-processing is arbitrary, and it is also possible to omit it.
  • a process of replacing the liquid adhering to the substrate S with a liquid having a lower surface tension can be performed as post-processing.
  • the drying process is performed by rotating the substrate S at high speed to shake off the liquid component remaining and adhering to the substrate S, as shown in FIG. 4D.
  • the substrate S after processing can be unloaded from the processing chamber 10 . If there is a substrate to be processed next (YES in step S113), the process returns to step S101, a new substrate is received from the initial state, and the above processing is performed. If there is no next substrate (NO in step S113), the process ends.
  • the above is the outline of the resist removing process in this embodiment.
  • FIG. 5 is a timing chart showing the operation timing of each part.
  • the plasma reactor 24 descends from the standby position (time T1) to the facing position (time T2), during which gas is discharged from the gas nozzle 25 and plasma lighting in the plasma reactor 24 is performed.
  • the gas discharge is started after the time T1 at which the plasma reactor 24 starts to descend, but the gas discharge may be started earlier than the time T1.
  • the gas supply rate is initially relatively large, but is changed to a smaller flow rate before time T2.
  • the flow rate may be changed stepwise as indicated by the solid line in the figure, or the gas supply rate may gradually decrease over time as indicated by the dotted line.
  • the gas supply amount is reduced in order to prevent the liquid film LP formed on the upper surface of the substrate S from being disturbed. . Since the volume of the gap space is small, the atmosphere can be well controlled even with a small flow rate.
  • the voltage application to the plasma reactor 24 for lighting the plasma is started at a timing sufficiently earlier than the time T2 in order to stabilize the lighting state of the plasma.
  • the voltage application is started after gas ejection from the gas nozzle 25 is started.
  • the plasma may be turned on earlier than the discharge of the gas, or may be turned on all the time.
  • the plasma reactor 24 is arranged at a position facing the substrate S in close proximity, and the plasma is lit while the atmosphere between the plasma reactor 24 and the substrate S is controlled. As a result, the gap space between the plasma reactor 24 and the substrate S becomes a plasma generation space, and the gas in the gap space becomes plasma.
  • FIGS. 6A and 6B are diagrams schematically showing the principle of resist removal processing by plasma lighting.
  • the plasma P generated in the gap space G between the plasma reactor 24 and the substrate S irradiates the liquid film LP.
  • the active species A dissolved in the liquid accelerate the oxidative decomposition reaction of the resist film R by the sulfuric acid in the liquid.
  • the removal processing of the resist film R proceeds.
  • the thickness Tp of the liquid film LP must be thick enough to supply at least a sufficient amount of sulfuric acid, which is the main component of the oxidative decomposition reaction, to decompose the resist film R.
  • the active species A dissolved in the liquid are deactivated before reaching the interface with the resist film R, thereby reducing the effect of plasma irradiation. It will be done. In order to enhance this effect, the thinner the liquid film LP is, the better. For these reasons, there is an appropriate range for the thickness Tp of the liquid film LP.
  • a resist removal rate of 100% was obtained by irradiating plasma on a liquid film with a thickness of 200 micrometers.
  • the resist removal rate decreased by about 98%, and when the film thickness was set to about 300 ⁇ m, it decreased to about 52%.
  • a small difference in film thickness causes a large difference in resist removal performance.
  • a method of controlling the thickness of the liquid film LP only by the amount of the processing liquid supplied to the substrate S is also conceivable. For example, about 14 milliliters of liquid is required to form a 200-micrometer-thick liquid film on a circular substrate with a diameter of 300 millimeters.
  • the surface of the substrate has unevenness and different wettability depending on the position, it is practically difficult to form a uniform liquid film only by supplying a necessary amount of liquid. Therefore, it is preferable to adjust the film thickness by supplying more processing liquid than necessary and shaking off a part of the substrate S by rotating it. In this case, it is possible to achieve a desired film thickness by controlling the rotation speed, acceleration, duration, and the like.
  • the rotation of the substrate S is preferably stopped while the plasma irradiation is performed.
  • it is effective to keep the liquid film LP stationary.
  • the substrate S may be rotated at such a low speed that the liquid film LP is not disturbed. If the rotation speed at this time is set lower than the rotation speed during liquid film formation, the processing liquid can be prevented from dropping from the substrate S, and breakage of the liquid film LP formed on the substrate S can be avoided. .
  • step S110 it is determined in step S110 whether or not the process needs to be repeated. Then, when repetition is necessary, a series of processes of liquid film formation, film thickness measurement, and plasma irradiation are executed multiple times. This provides the following effects.
  • the resist removal effect can be made more reliable. Specifically, it is as follows. For example, when the resist film is thick, or when the resist film is hardened by ion implantation, it may not be possible to remove the entire resist film in one treatment. Here, if the thickness of the liquid film is increased in order to enhance the resist removing action, the effect of plasma irradiation is weakened, and as a result, the resist removing effect is not necessarily improved. By repeating the combination of the thin liquid film and the plasma irradiation a plurality of times, the resist can be removed more effectively.
  • the thickness of the liquid film can be varied for each process.
  • the substrate surface has irregularities, and the state of the resist film varies depending on the position within the substrate due to differences in ion implantation density and the like. Therefore, the proper thickness of the liquid film required in the process for removing the resist film is not uniform within the substrate.
  • the target value of the film thickness can be set each time according to the purpose. Therefore, it is possible to obtain good processing results for the entire substrate.
  • the concentration of sulfuric acid in the treatment liquid is lowered by being consumed in the chemical reaction with the resist film, but this can be reset by forming a new liquid film.
  • parameters such as the amount of processing liquid supplied to the substrate S, the rotation speed and acceleration of the substrate S, the duration of rotation, the target value of the film thickness, and the plasma irradiation conditions are set for each processing. It is possible.
  • the removal processing of the resist film formed on the substrate S is performed by a combination of liquid film formation with a processing liquid mainly containing sulfuric acid and plasma irradiation. Since the processing liquid can be activated by plasma irradiation, there is no need to add hydrogen peroxide or continuously supply the processing liquid. Furthermore, a thinner liquid film is more suitable for allowing the plasma active species to reach the interface between the processing liquid and the resist film, which can further reduce the amount of processing liquid used.
  • the spin chuck mechanism (spin base 31, chuck pin 32, rotation support shaft 33, rotation drive mechanism 34) functions as the "substrate holder" of the present invention
  • plasma Reactor 24 functions as the "reactor” of the present invention
  • the plasma reactor 24 and the plasma power source 92 function as the "plasma generation source” of the present invention.
  • the control unit 90 functions as the "control section" of the present invention.
  • liquid supply unit 40 and the processing liquid supply section 94 function as the "processing liquid supply section” of the present invention.
  • film thickness measurement unit 50 functions as the “film thickness measurement section” of the present invention.
  • gas nozzle 25 and the gas supply section 93 function as the "gas supply section” of the present invention.
  • the processing liquid is supplied to the substrate S by discharging the processing liquid from the liquid nozzle 44 positioned above the rotation center of the substrate S.
  • the method of supplying the treatment liquid is not limited to this, and for example, a method of spray coating using a spray nozzle or a method of ejecting the treatment liquid while scanning and moving the nozzle with respect to the substrate S may be used.
  • the plasma reactor 24 in the above embodiment is a plate-like member having a planar size equal to or larger than the planar size of the substrate S.
  • a smaller plasma reactor can be used, as shown below.
  • FIG. 7A and 7B are plan views illustrating another form of the plasma reactor.
  • a plasma reactor 24a smaller than the substrate S is attached to the tip of the swing arm 24b.
  • the plasma reactor 24a scans and moves along the upper surface of the substrate S by swinging the swing arm 24b by the operation of the driving mechanism (not shown). Since plasma lighting is limited to the space between the plasma reactor 24a and the substrate S, the entire substrate S can be processed by scanning the plasma reactor 24a with respect to the substrate S. FIG. Also, only specific positions on the substrate S can be processed. In order to process the entire substrate S in a short time, the substrate S may be rotated at a low speed. The rotation speed at this time is desirably lower than the rotation speed during liquid film formation.
  • an elongated plasma reactor 24c is provided that is larger than the size of the substrate S in one direction and smaller than the size of the substrate S in the orthogonal direction.
  • a scanning movement mechanism (not shown) scans and moves the plasma reactor 24c with respect to the substrate S in a direction crossing the longitudinal direction thereof, so that the entire surface of the substrate S is processed.
  • the scanning movement mechanism includes a motor and a coupling member that couples the plasma reactor 24c and the motor. In this example, rotation of the substrate S is not necessarily required.
  • sulfuric acid is used as the processing liquid and a gas containing oxygen is introduced into the plasma generation space for the purpose of removing the organic resist film formed on the surface of the substrate S.
  • a gas containing oxygen is introduced into the plasma generation space for the purpose of removing the organic resist film formed on the surface of the substrate S.
  • the rotation of the substrate can be stopped and plasma irradiation can be performed.
  • disturbance of the liquid film formed on the substrate can be suppressed, and active species dissolved in the liquid by plasma irradiation can efficiently reach the substrate surface.
  • the plasma generation source may include a reactor having a planar size equal to or larger than the planar size of the substrate. That is, the reactor may have a shape that has an area larger than that of the substrate and covers the entire substrate in plan view. With such a configuration, the entire surface of the substrate can be processed simultaneously.
  • the plasma generation source may include a reactor having a planar size smaller than the planar size of the substrate. That is, the plasma source may have a smaller area than the substrate, and the substrate may cover the entire plasma source in plan view.
  • the substrate can be rotated at a rotational speed equal to or lower than that at which the liquid film is formed, and the reactor can be scanned and moved with respect to the substrate for plasma irradiation. According to such a configuration, it is possible to process the entire substrate by sequentially changing the facing position between the reactor and the substrate. It is also possible to process only specific locations on the substrate if desired.
  • the rotation of the substrate can be stopped and the film thickness can be detected.
  • the film thickness can be detected.
  • formation of the liquid film can be re-executed.
  • the plasma irradiation can be performed while the thickness of the liquid film is optimized.
  • at least one of the supply amount of the processing liquid, the rotation speed of the substrate, the duration of rotation of the substrate, and the rotation acceleration of the substrate is changed from the previous liquid film formation, and the liquid film is formed again. good too. According to such a configuration, it is possible to optimize the film thickness of the newly formed liquid film by changing the liquid film forming conditions and re-executing the formation of the liquid film.
  • a predetermined amount of processing liquid larger than the amount of liquid forming the liquid film when the film thickness is the target value is supplied to the upper surface of the substrate, and a part of the processing liquid is supplied to the upper surface of the substrate. It can be shaken off by rotation.
  • the parameters that determine the thickness of the liquid film are mainly related to the rotation of the substrate. That is, a desired film thickness can be achieved by appropriately controlling the rotation of the substrate.
  • the formation of the liquid film, the detection of the film thickness, and the plasma irradiation can be repeated multiple times in this order. According to such a configuration, by repeating the process a plurality of times, the process result can be made more reliable. Further, for example, by making the processing conditions different for each execution, it is possible to further enhance the processing effect.
  • the treatment liquid may contain sulfuric acid.
  • a method using a sulfuric acid-hydrogen peroxide solution mixed with a hydrogen peroxide solution is known. can be done.
  • a gas containing oxygen can be supplied between the plasma generation source and the upper surface of the substrate.
  • gas is supplied to the gap space between the plasma source and the substrate while lowering the plasma source from the waiting position above the substrate to the position facing the substrate. It is preferable to decrease the supply amount of the gas over time as it descends.
  • the plasma generation source moves from a standby position greatly separated from the substrate to a facing position closely facing the substrate. At this time, by supplying gas to the gap space between the plasma generation source and the substrate, the atmosphere in the gap space can be appropriately controlled.
  • the present invention can be applied to processing for removing a resist film formed on the upper surface of a substrate with a processing liquid. That is, in order to decompose and remove the resist film, it is possible to apply a treatment that combines liquid film formation with a treatment liquid and plasma irradiation. Since the reactive species in the processing liquid can be activated by plasma irradiation, the resist can be removed satisfactorily even with a small amount of liquid.
  • a target value acquisition step of acquiring a target value may be further provided, and the target value varies according to at least one of the type of substrate, the type of processing liquid, and the content of processing using the processing liquid. good too. According to such a configuration, it is possible to set the target value of the film thickness according to the application, and for example, it is possible to switch and apply a plurality of target values.
  • the reactor may have a planar size equal to or larger than the planar size of the substrate, and may be configured to face the entire upper surface of the substrate at the facing position. With such a configuration, it is possible to process the entire substrate surface simultaneously.
  • a gas supply unit that supplies gas between the reactor and the upper surface of the substrate may be further provided. According to such a configuration, it is possible to control the atmosphere between the reactor and the substrate to a condition suitable for plasma lighting, thereby stably generating plasma. Also, it is possible to control the types of active species generated by plasma lighting.
  • the gas supply unit may have a gas nozzle that is integrally coupled with the reactor and discharges the gas, and the gas nozzle discharges the gas horizontally from the peripheral edge side of the substrate toward the center of rotation. It may be configured to Since the positional relationship between the two is fixed by integrating the gas nozzle with the reactor, the atmosphere in the lower surface of the reactor can be controlled more reliably. Further, by discharging the gas in a substantially horizontal direction toward the center of rotation from the peripheral edge of the substrate, the atmosphere between the reactor and the substrate can be made uniform, which contributes to stable plasma lighting. It contributes to
  • the present invention can be applied to various substrate treatments in which a substrate is treated with a treatment liquid, and can be suitably applied, for example, to removal of a resist film from a substrate.
  • 1 substrate processing apparatus 24 plasma reactor (plasma generation source, reactor) 25 gas nozzle (gas supply unit) 31 spin base (substrate holder) 32 chuck pin (substrate holder) 33 Rotating shaft (substrate holder) 34 rotation drive mechanism (substrate holder) 40 liquid supply unit 50 film thickness measurement unit (film thickness measurement section) 90 control unit (control section) 92 plasma power supply (plasma generation source) 93 gas supply unit (gas supply unit) 94 processing liquid supply unit (processing liquid supply unit) 97 film thickness calculator Lq treatment liquid S substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
PCT/JP2022/018806 2021-04-27 2022-04-26 基板処理方法および基板処理装置 WO2022230845A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN202280030580.1A CN117242546A (zh) 2021-04-27 2022-04-26 基板处理方法以及基板处理装置
KR1020237039224A KR20230167434A (ko) 2021-04-27 2022-04-26 기판 처리 방법 및 기판 처리 장치

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2021-075037 2021-04-27
JP2021075037A JP2022169174A (ja) 2021-04-27 2021-04-27 基板処理方法および基板処理装置

Publications (1)

Publication Number Publication Date
WO2022230845A1 true WO2022230845A1 (ja) 2022-11-03

Family

ID=83848152

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2022/018806 WO2022230845A1 (ja) 2021-04-27 2022-04-26 基板処理方法および基板処理装置

Country Status (5)

Country Link
JP (1) JP2022169174A (ko)
KR (1) KR20230167434A (ko)
CN (1) CN117242546A (ko)
TW (1) TWI818524B (ko)
WO (1) WO2022230845A1 (ko)

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000150349A (ja) * 1998-11-13 2000-05-30 Mitsubishi Electric Corp フォトレジスト膜除去方法および装置
JP2002053312A (ja) * 2000-08-09 2002-02-19 Sony Corp カロ酸発生装置、レジスト除去装置およびレジスト除去方法
JP2005012175A (ja) * 2003-05-28 2005-01-13 Dainippon Screen Mfg Co Ltd 基板処理装置および基板処理方法
JP2008053646A (ja) * 2006-08-28 2008-03-06 Hamamatsu Photonics Kk 表面処理方法および表面処理装置
JP2011211092A (ja) * 2010-03-30 2011-10-20 Dainippon Screen Mfg Co Ltd 基板処理装置および処理液温度測定方法
US20150136183A1 (en) * 2012-11-20 2015-05-21 Tokyo Electron Limited System of controlling treatment liquid dispense for spinning substrates
JP2020004561A (ja) * 2018-06-27 2020-01-09 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
JP2020132440A (ja) * 2019-02-13 2020-08-31 株式会社Ｓｃｒｅｅｎホールディングス 生成装置、基板処理装置、及び基板処理方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6203098B2 (ja) * 2013-03-29 2017-09-27 芝浦メカトロニクス株式会社 基板処理装置及び基板処理方法
JP7313208B2 (ja) 2019-06-26 2023-07-24 東京エレクトロン株式会社 基板処理方法
JP7340396B2 (ja) * 2019-09-24 2023-09-07 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000150349A (ja) * 1998-11-13 2000-05-30 Mitsubishi Electric Corp フォトレジスト膜除去方法および装置
JP2002053312A (ja) * 2000-08-09 2002-02-19 Sony Corp カロ酸発生装置、レジスト除去装置およびレジスト除去方法
JP2005012175A (ja) * 2003-05-28 2005-01-13 Dainippon Screen Mfg Co Ltd 基板処理装置および基板処理方法
JP2008053646A (ja) * 2006-08-28 2008-03-06 Hamamatsu Photonics Kk 表面処理方法および表面処理装置
JP2011211092A (ja) * 2010-03-30 2011-10-20 Dainippon Screen Mfg Co Ltd 基板処理装置および処理液温度測定方法
US20150136183A1 (en) * 2012-11-20 2015-05-21 Tokyo Electron Limited System of controlling treatment liquid dispense for spinning substrates
JP2020004561A (ja) * 2018-06-27 2020-01-09 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
JP2020132440A (ja) * 2019-02-13 2020-08-31 株式会社Ｓｃｒｅｅｎホールディングス 生成装置、基板処理装置、及び基板処理方法

Also Published As

Publication number Publication date
TW202309994A (zh) 2023-03-01
CN117242546A (zh) 2023-12-15
KR20230167434A (ko) 2023-12-08
JP2022169174A (ja) 2022-11-09
TWI818524B (zh) 2023-10-11

Similar Documents

Publication Publication Date Title
US7051743B2 (en) Apparatus and method for cleaning surfaces of semiconductor wafers using ozone
US20120186607A1 (en) Liquid treatment apparatus and method
US10964558B2 (en) Substrate processing method and substrate processing device
JP5254120B2 (ja) 液処理装置および液処理方法
JP4187540B2 (ja) 基板処理方法
JP2008103556A (ja) 基板処理方法および基板処理装置
WO2022230845A1 (ja) 基板処理方法および基板処理装置
JP2001319910A (ja) 液処理装置
TWI753353B (zh) 基板處理方法以及基板處理裝置
JP6742124B2 (ja) 基板処理装置
US11919049B2 (en) Substrate processing method and substrate processing apparatus
JP4936878B2 (ja) 基板処理装置および基板処理方法
JP4299638B2 (ja) 基板処理装置および基板処理方法
JP2009267145A (ja) 基板処理装置および基板処理方法
JP7288770B2 (ja) 基板処理方法および基板処理装置
CN209747469U (zh) 基板清洗装置
KR20170077031A (ko) 기판 처리 장치, 기판 처리 방법 및 기억 매체
JP4405236B2 (ja) 基板処理方法および基板処理装置
CN113614887A (zh) 基板处理方法、半导体制造方法及基板处理装置
WO2023037663A1 (ja) 基板処理方法および基板処理装置
TWI843112B (zh) 基板處理方法以及基板處理裝置
WO2022196682A1 (ja) 基板処理方法および基板処理装置
JP2588899B2 (ja) レジスト膜の除去装置
JP2022034285A (ja) 基板処理装置および基板処理方法
JP2023019211A (ja) 基板洗浄装置および基板洗浄方法

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 22795758

Country of ref document: EP

Kind code of ref document: A1

WWE Wipo information: entry into national phase

Ref document number: 202280030580.1

Country of ref document: CN

ENP Entry into the national phase

Ref document number: 20237039224

Country of ref document: KR

Kind code of ref document: A

WWE Wipo information: entry into national phase

Ref document number: 1020237039224

Country of ref document: KR

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 22795758

Country of ref document: EP

Kind code of ref document: A1