TWI818524B - 基板處理方法以及基板處理裝置 - Google Patents

基板處理方法以及基板處理裝置 Download PDF

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Publication number
TWI818524B
TWI818524B TW111115927A TW111115927A TWI818524B TW I818524 B TWI818524 B TW I818524B TW 111115927 A TW111115927 A TW 111115927A TW 111115927 A TW111115927 A TW 111115927A TW I818524 B TWI818524 B TW I818524B
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TW
Taiwan
Prior art keywords
substrate
liquid
film
plasma
film thickness
Prior art date
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TW111115927A
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English (en)
Chinese (zh)
Other versions
TW202309994A (zh
Inventor
柴田秀一
石津岳明
西出基
小林健司
Original Assignee
日商斯庫林集團股份有限公司
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Publication of TW202309994A publication Critical patent/TW202309994A/zh
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Publication of TWI818524B publication Critical patent/TWI818524B/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)
TW111115927A 2021-04-27 2022-04-27 基板處理方法以及基板處理裝置 TWI818524B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2021075037A JP2022169174A (ja) 2021-04-27 2021-04-27 基板処理方法および基板処理装置
JP2021-075037 2021-04-27

Publications (2)

Publication Number Publication Date
TW202309994A TW202309994A (zh) 2023-03-01
TWI818524B true TWI818524B (zh) 2023-10-11

Family

ID=83848152

Family Applications (1)

Application Number Title Priority Date Filing Date
TW111115927A TWI818524B (zh) 2021-04-27 2022-04-27 基板處理方法以及基板處理裝置

Country Status (5)

Country Link
JP (1) JP2022169174A (ko)
KR (1) KR20230167434A (ko)
CN (1) CN117242546A (ko)
TW (1) TWI818524B (ko)
WO (1) WO2022230845A1 (ko)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20160071746A1 (en) * 2013-03-29 2016-03-10 Shibaura Mechatronics Corporation Substrate processing apparatus and substrate processing method
TW202113964A (zh) * 2019-09-24 2021-04-01 日商斯庫林集團股份有限公司 基板處理方法以及基板處理裝置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3869566B2 (ja) * 1998-11-13 2007-01-17 三菱電機株式会社 フォトレジスト膜除去方法および装置
JP2002053312A (ja) * 2000-08-09 2002-02-19 Sony Corp カロ酸発生装置、レジスト除去装置およびレジスト除去方法
JP4488780B2 (ja) * 2003-05-28 2010-06-23 大日本スクリーン製造株式会社 基板処理装置および基板処理方法
JP2008053646A (ja) * 2006-08-28 2008-03-06 Hamamatsu Photonics Kk 表面処理方法および表面処理装置
JP5371862B2 (ja) * 2010-03-30 2013-12-18 大日本スクリーン製造株式会社 基板処理装置および処理液温度測定方法
US20170301567A9 (en) * 2012-11-20 2017-10-19 Tokyo Electron Limited System of controlling treatment liquid dispense for spinning substrates
JP7080114B2 (ja) * 2018-06-27 2022-06-03 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
JP7208814B2 (ja) * 2019-02-13 2023-01-19 株式会社Ｓｃｒｅｅｎホールディングス 生成装置、基板処理装置、及び基板処理方法
JP7313208B2 (ja) 2019-06-26 2023-07-24 東京エレクトロン株式会社 基板処理方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20160071746A1 (en) * 2013-03-29 2016-03-10 Shibaura Mechatronics Corporation Substrate processing apparatus and substrate processing method
TW202113964A (zh) * 2019-09-24 2021-04-01 日商斯庫林集團股份有限公司 基板處理方法以及基板處理裝置

Also Published As

Publication number Publication date
TW202309994A (zh) 2023-03-01
WO2022230845A1 (ja) 2022-11-03
JP2022169174A (ja) 2022-11-09
CN117242546A (zh) 2023-12-15
KR20230167434A (ko) 2023-12-08

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