WO2022166132A1 - 封装基板及具有其的半导体结构 - Google Patents

封装基板及具有其的半导体结构 Download PDF

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Publication number
WO2022166132A1
WO2022166132A1 PCT/CN2021/109312 CN2021109312W WO2022166132A1 WO 2022166132 A1 WO2022166132 A1 WO 2022166132A1 CN 2021109312 W CN2021109312 W CN 2021109312W WO 2022166132 A1 WO2022166132 A1 WO 2022166132A1
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WIPO (PCT)
Prior art keywords
conductive
conductive bridge
bridge
package substrate
hole
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PCT/CN2021/109312
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English (en)
French (fr)
Inventor
王海林
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长鑫存储技术有限公司
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Publication date
Application filed by 长鑫存储技术有限公司 filed Critical 长鑫存储技术有限公司
Priority to JP2022553571A priority Critical patent/JP7432001B2/ja
Priority to EP21867865.4A priority patent/EP4060728A4/en
Priority to KR1020227031135A priority patent/KR102710029B1/ko
Priority to US17/580,760 priority patent/US20220254709A1/en
Publication of WO2022166132A1 publication Critical patent/WO2022166132A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49838—Geometry or layout

Definitions

  • the present disclosure relates to the field of semiconductor technology, and in particular, to a package substrate and a semiconductor structure having the same.
  • packaging substrates are commonly used. Due to structural limitations of the packaging substrates, the packaging substrates are prone to partial distortion or overall warpage during use, which affects the connection effect.
  • the present disclosure provides a package substrate and a semiconductor structure having the same to improve the performance of the package substrate.
  • a package substrate comprising:
  • the body includes an opening area
  • the conductive layer is disposed in the opening area, the conductive layer includes a first conductive bridge and a second conductive bridge, and the first conductive bridge and the second conductive bridge are arranged at intervals;
  • the first conductive bridge is provided with a first through hole.
  • a semiconductor structure including the above-mentioned package substrate and chip.
  • an opening area is formed on the body, and the first conductive bridge and the second conductive bridge spaced apart are arranged in the opening area, so that the signal transmission quality of the conductive layer can be enhanced.
  • the width of the second conductive bridge increases the anti-twisting ability of the body, and the overall area of the conductive layer can be reduced by arranging the first through hole on the first conductive bridge, thereby reducing the warpage problem of the body and improving the structure. The performance of the package substrate.
  • FIG. 1 is a schematic structural diagram of a packaging substrate according to an exemplary embodiment
  • FIG. 2 is a schematic structural diagram of a first embodiment of a first conductive bridge of a packaging substrate according to an exemplary embodiment
  • FIG. 3 is a schematic structural diagram of a second embodiment of a first conductive bridge of a packaging substrate according to an exemplary embodiment
  • FIG. 4 is a schematic structural diagram of a third embodiment of a first conductive bridge of a packaging substrate according to an exemplary embodiment
  • FIG. 5 is a schematic structural diagram of a fourth embodiment of a first conductive bridge of a packaging substrate according to an exemplary embodiment
  • FIG. 6 is a schematic structural diagram of a fifth embodiment of a first conductive bridge of a packaging substrate according to an exemplary embodiment
  • FIG. 7 is a schematic structural diagram of a sixth embodiment of a first conductive bridge of a packaging substrate according to an exemplary embodiment
  • FIG. 8 is a schematic structural diagram of a package substrate according to another exemplary embodiment.
  • the package substrate includes: a body 10 , the body 10 includes an opening area 11 ; a conductive layer 20 , the conductive layer 20 is disposed in the opening area 11 , and the conductive layer 20 includes a first A conductive bridge 21 and a second conductive bridge 22 are arranged at intervals.
  • the first conductive bridge 21 is provided with a first through hole 211 .
  • an opening area 11 is formed on the body 10 , and the first conductive bridge 21 and the second conductive bridge 22 spaced apart are arranged in the opening area 11 , so that the signal transmission quality of the conductive layer 20 can be enhanced, And can increase the anti-twist ability of the body 10 by controlling the width of the first conductive bridge 21 and the second conductive bridge 22, and can reduce the overall area of the conductive layer 20 by arranging the first through hole 211 on the first conductive bridge 21 , so as to reduce the warpage problem of the body 10 and improve the performance of the package substrate from the structure.
  • the body 10 includes a bottom surface and a top surface, the bottom surface and the top surface are arranged oppositely, the top surface can be used for connecting with chips, and the bottom surface can be connected with components such as external conductive bumps.
  • the opening area 11 is located in the middle area of the body 10 , that is, the opening area 11 is inside the outer edge of the body 10 and does not intersect with the outer edge of the body 10 .
  • the opening area 11 is located on the bottom surface, the opening area 11 is provided in the middle area of the bottom surface, and the conductive layer 20 is formed in the opening area 11 .
  • the conductive layer 20 may be composed of first conductive bridges 21 and second conductive bridges 22 , that is, independent first conductive bridges 21 and second conductive bridges 22 are provided in the opening region 11 , and the first conductive bridge
  • the widths of the bridges 21 and the second conductive bridges 22 can be appropriately increased to improve the strength of the conductive layer 20.
  • a first conductive bridge 21 can be added with a first
  • the through holes 211 are used to reduce the area of the conductive layer 20, that is, the occupied area of the bottom conductive material layer on the bottom surface can be reduced as a whole.
  • the top surface of the body 10 is also provided with a top conductive material layer, and by reducing the area of the bottom conductive material layer, the area of the top conductive material layer and the area of the bottom conductive material layer can be made as close as possible, thereby further reducing the body 10 warping problem occurs.
  • the conductive layer 20 may be a copper layer, an aluminum layer, a tungsten layer, or the like.
  • the conductive layer 20 may be composed of a first conductive bridge 21 and a plurality of second conductive bridges 22, and the first conductive bridges 21 and the second conductive bridges 22 are arranged at intervals, and two adjacent second conductive bridges The bridges 22 are also arranged at intervals, and the arrangement of the first conductive bridges 21 and the plurality of second conductive bridges 22 is not limited here.
  • the conductive layer 20 may also be composed of a plurality of first conductive bridges 21 and one second conductive bridge 22 .
  • the conductive layer 20 may also be composed of a plurality of first conductive bridges 21 and a plurality of second conductive bridges 22 .
  • the structures of the first conductive bridges 21 and the second conductive bridges 22 may be similar, that is, the shapes of the first conductive bridges 21 and the second conductive bridges 22 may be substantially the same. In some embodiments, the first conductive bridge 21 and the second conductive bridge 22 may be two completely different structures.
  • the package substrate further includes: conductive bumps 30 .
  • the conductive bumps 30 are disposed on the body 10 and are located outside the opening region 11 .
  • conductive bumps 30 above and below the opening area 11 , and the walls of the opening area 11 are located between the conductive bumps 30 , that is, the sidewalls of the opening area 11 have a certain distance from the outer edges of the conductive bumps 30 . distance, so as to avoid the problem of weak local strength of the main body 10 and avoid problems such as distortion and deformation of the main body 10 .
  • the wall surface of the opening area 11 is located between the conductive bumps 30 , that is, the largest area formed by connecting the outer edges of the plurality of conductive bumps 30 is located outside the opening area 11 .
  • the connection line of the plurality of conductive bumps 30 located above the opening area 11 is a first straight line
  • the connection line of the plurality of conductive bumps 30 located below the opening area 11 is a second straight line
  • the conductive bumps on the upper and lower sides are 30.
  • a third straight line and a fourth straight line are respectively formed on the left and right sides of the opening area 11, the first straight line, the second straight line, the third straight line and the fourth straight line form an area, and the wall surface of the opening area 11 is located in this area.
  • the wall surfaces include two opposite first wall surfaces 111 and two opposite second wall surfaces 112 .
  • the first wall surfaces 111 extend along the width direction of the opening area 11
  • the second wall surfaces 112 extend along the width direction of the opening area 11 .
  • the opening area 11 extends in the length direction; wherein, the connecting line between the outer edges of the outermost upper and lower conductive bumps 30 forms the limiting area 31, and the first wall surface 111 is located in the limiting area 31, that is, the distance from the first wall surface 111
  • the vertical distance between the outer edges of the main body 10 is not too small, so as to ensure the strength of the left and right sides of the main body 10 .
  • connection lines between the outer edges of the upper and lower conductive bumps 30 located at the outermost side of the main body 10 form a limiting region 31 , and the outermost conductive bumps 30 have a certain distance from the outer edge of the main body 10 , so It can be ensured that the first wall surface 111 has a sufficient distance from the outer edge of the main body 10, and the problem that the left and right sides of the opening area 11 are narrow will not occur.
  • the conductive bumps 30 may be materials such as copper, aluminum, or tungsten.
  • the body 10 may be provided with vent holes, and the conductive layer 20 does not block the vent holes, wherein a plurality of vent holes may be arranged at equal intervals.
  • first through holes 211 there are multiple first through holes 211, and the multiple first through holes 211 are arranged on the first conductive bridge 21 at intervals, that is, two adjacent first through holes 211 are not connected to each other, so that the The structural strength of the first conductive bridge 21 itself is ensured, and the area of the conductive layer 20 can be further reduced.
  • the plurality of first through holes 211 may be arbitrarily arranged on the first conductive bridge 21 .
  • the plurality of first through holes 211 are arranged at intervals along the length direction of the first conductive bridges 21 , that is, a connection portion of the first conductive bridges 21 remains between two adjacent first through holes 211 , Moreover, the connection portion is located in the width direction of the first conductive bridge 21 , which can avoid the problem that the strength of the first conductive bridge 21 is excessively reduced due to the existence of the first through hole 211 to a certain extent.
  • the first conductive bridge 21 when the first conductive bridge 21 is a regular rectangular structure, the direction in which the long sides of the rectangular structure are formed is the longitudinal direction.
  • the first conductive bridge 21 has an irregular structure, for example, it is composed of a plurality of parts similar to a rectangular structure, and the length direction of the first conductive bridge 21 can be understood as the length direction of a similar rectangular structure.
  • a gap 24 is formed between the first conductive bridge 21 and the second conductive bridge 22, that is, the opening area 11 may be a large opening, so that after the first conductive bridge 21 and the second conductive bridge 22 are formed, the first conductive bridge 21 and the second conductive bridge 22 are formed. There is no barrier between the first conductive bridge 21 and the second conductive bridge 22, that is, the gap 24 is an air gap.
  • the gap 24 is filled with a heat conducting part, so as to quickly conduct the heat formed by the conductive layer 20 out.
  • the thermally conductive portion may be a graphene material or thermally conductive silica gel, etc., which is not limited here, and can be selected according to actual needs.
  • the plurality of first through holes 211 may be through holes with the same structure, and in some embodiments, it is not excluded that at least one of the plurality of first through holes 211 is different from other structures.
  • the hole wall of the first through hole 211 includes at least one of an arc surface and a flat surface, that is, the shape of the first through hole 211 can be determined according to actual requirements to ensure that the first conductive bridge 21 has sufficient strength. Basically, the area of the first conductive bridge 21 can be reduced as much as possible.
  • the first through hole 211 may be a rectangular hole, a triangular hole, a circular hole, or an oval hole.
  • the hole wall of the first through hole 211 includes an irregular hole composed of an arc surface and a plane surface.
  • the first through hole 211 may be a polygonal hole, and the surface of the hole wall of the first through hole 211 may be greater than 4.
  • the second conductive bridge 22 is provided with a second through hole 221 , that is, the area of the conductive layer 20 can be further reduced by arranging the second through hole 221 , thereby reducing the body 10 The warping problem that occurs.
  • the plurality of second through holes 221 may be arbitrarily arranged on the second conductive bridge 22 .
  • the plurality of second through holes 221 are arranged at intervals along the length direction of the second conductive bridges 22 , that is, a connection portion of the second conductive bridges 22 remains between two adjacent second through holes 221 , Moreover, the connection portion is located in the width direction of the second conductive bridge 22 , which can avoid the problem that the strength of the second conductive bridge 22 is excessively reduced due to the existence of the second through hole 221 to a certain extent.
  • the second conductive bridge 22 when the second conductive bridge 22 is a regular rectangular structure, the direction in which the long sides of the rectangular structure are formed is the longitudinal direction.
  • the second conductive bridge 22 has an irregular structure, for example, it is composed of a plurality of parts similar to a rectangular structure, at this time, the length direction of the second conductive bridge 22 can be understood as the length direction of the similar rectangular structure.
  • the plurality of second through holes 221 may be through holes with identical structures, and in some embodiments, it is not excluded that at least one of the plurality of second through holes 221 is different from other structures.
  • the hole wall of the second through hole 221 includes at least one of an arc surface and a flat surface, that is, the shape of the second through hole 221 can be determined according to actual requirements, so as to ensure that the second conductive bridge 22 has sufficient strength Basically, the area of the second conductive bridge 22 can be reduced as much as possible.
  • the second through hole 221 may be a rectangular hole, a triangular hole, a circular hole, or an oval hole.
  • the hole wall of the second through hole 221 includes an irregular hole composed of an arc surface and a plane surface.
  • the second through hole 221 may be a polygonal hole, and the surface of the hole wall of the second through hole 221 may be greater than 4.
  • the shapes of the first through holes 211 and the second through holes 221 may be completely the same. In some embodiments, the shapes of the first through holes 211 and the second through holes 221 may also be different, which are not limited here.
  • the conductive layer 20 further includes: a third conductive bridge 23 , the third conductive bridge 23 is spaced from the first conductive bridge 21 , and the third conductive bridge 23 is spaced from the second conductive bridge 22 Setting, that is, increasing the number of independent conductive bridges of the conductive layer 20 , so as to meet the connection requirements.
  • the first conductive bridges 21 , the second conductive bridges 22 and the third conductive bridges 23 may be arranged in sequence along a certain direction.
  • the arrangement order of the first conductive bridges 21 , the second conductive bridges 22 and the third conductive bridges 23 can be randomly arranged along a certain direction.
  • the opening area 11 may be a rectangular area, and in this case, the first conductive bridges 21 , the second conductive bridges 22 and the third conductive bridges 23 may be spaced along the length direction of the opening area 11 . .
  • the distance between the first conductive bridge 21 and the second conductive bridge 22 is equal to the distance between the second conductive bridge 22 and the third conductive bridge 23 , that is, the first conductive bridge 21 , the second conductive bridge 22 and the third conductive bridge 23 .
  • the three conductive bridges 23 can be arranged at intervals along the length direction of the opening area 11 , so as to ensure that the overall strength distribution of the main body 10 is relatively uniform and avoid the problem of local weakness.
  • the open area 11 may be an open area composed of a plurality of rectangular areas.
  • a rectangular area is taken as the central area, and the four rectangular areas are respectively located in four directions of the central area.
  • the first conductive bridge 21, the second conductive bridge 22 and the third conductive bridge 23 can be arranged according to actual needs.
  • the number of the first conductive bridges 21 , the second conductive bridges 22 and the third conductive bridges 23 is not limited.
  • the third conductive bridge 23 is provided with a third through hole 231 , that is, the area of the conductive layer 20 can be further reduced by arranging the third through hole 231 , thereby reducing the body 10 The warping problem that occurs.
  • the plurality of third through holes 231 may be arbitrarily arranged on the third conductive bridge 23 .
  • the plurality of third through holes 231 are arranged at intervals along the length direction of the third conductive bridges 23 , that is, a connection portion of the third conductive bridges 23 remains between two adjacent third through holes 231 , Moreover, the connection portion is located in the width direction of the third conductive bridge 23 , which can avoid the problem that the strength of the third conductive bridge 23 is excessively reduced due to the existence of the third through hole 231 to a certain extent.
  • the third conductive bridge 23 when the third conductive bridge 23 is a regular rectangular structure, the direction in which the long sides of the rectangular structure are formed is the longitudinal direction.
  • the third conductive bridge 23 has an irregular structure, for example, it is composed of a plurality of parts similar to a rectangular structure, at this time, the length direction of the third conductive bridge 23 can be understood as the length direction of the similar rectangular structure.
  • the plurality of third through holes 231 may be through holes with the same structure, and in some embodiments, it is not excluded that at least one of the plurality of third through holes 231 is different from other structures.
  • the hole wall of the third through hole 231 includes at least one of an arc surface and a flat surface, that is, the shape of the third through hole 231 can be determined according to actual requirements to ensure that the third conductive bridge 23 has sufficient strength. Basically, the area of the third conductive bridge 23 can be reduced as much as possible.
  • the third through hole 231 may be a rectangular hole, a triangular hole, a circular hole, or an oval hole.
  • the hole wall of the third through hole 231 includes an irregular hole composed of an arc surface and a plane surface.
  • the third through hole 231 may be a polygonal hole, and the face of the hole wall of the third through hole 231 may be greater than 4.
  • the structural form of the third conductive bridge 23 may be similar to one of the first conductive bridge 21 and the second conductive bridge 22 .
  • the shapes of the first through hole 211 , the second through hole 221 and the third through hole 231 may be completely the same. In some embodiments, the shapes of at least two of the first through hole 211 , the second through hole 221 and the third through hole 231 may also be different, which is not limited here.
  • the conductive layer 20 may further include a fourth conductive bridge, and the fourth conductive bridge may also be provided with a fourth through hole similar to the above-mentioned first through hole 211 , second through hole 221 or third through hole 231 .
  • the structural form of the fourth conductive bridge may be completely different from that of the first conductive bridge 21 , the second conductive bridge 22 and the third conductive bridge 23 .
  • the structural form of the fourth conductive bridge may be consistent with at least one of the first conductive bridge 21 , the second conductive bridge 22 and the third conductive bridge 23 , which is not limited here.
  • any one of the first conductive bridge 21 , the second conductive bridge 22 , the third conductive bridge 23 and the fourth conductive bridge may be plural.
  • the first conductive bridges 21 , the second conductive bridges 22 , the third conductive bridges 23 and the fourth conductive bridges may be arranged at equal intervals, that is, the plurality of conductive bridges may be arranged at equal intervals.
  • the first conductive bridge 21 is a rectangular structure.
  • the first conductive bridge 21 is a rectangular structure, there are at least two first through holes 211 in the rectangular structure, and the first through holes 211 are all square in shape.
  • the first conductive bridge 21 is a rectangular structure, there are at least two first through holes 211 in the rectangular structure, and the shapes of the first through holes 211 are all rectangles.
  • the first conductive bridge 21 is a rectangular structure, there are at least two first through holes 211 in the rectangular structure, and the shapes of the first through holes 211 are all circular.
  • the first conductive bridge 21 is a rectangular structure, there are at least two first through holes 211 in the rectangular structure, and the shapes of the first through holes 211 are all diamonds.
  • any one of the second conductive bridge 22 , the third conductive bridge 23 and the fourth conductive bridge may be in the structural form shown in FIGS. 2 to 5 .
  • the first conductive bridge 21 includes: a first bridge segment 212, both ends of which are connected to the body 10; a second bridge segment 213, both ends of which are connected to the body 10 , the first bridging section 212 and the second bridging section 213 are arranged at intervals; the third bridging section 214, the two ends of the third bridging section 214 are respectively connected to the first bridging section 212 and the second bridging section 213; wherein, the first bridging section 212 At least one of the second bridging section 213 and the third bridging section 214 is provided with a first through hole 211 .
  • the first conductive bridge 21 is composed of a first bridge segment 212 , a second bridge segment 213 and a third bridge segment 214 .
  • the first bridge segment 212 and the second bridge segment 213 are connected to the main body 10 .
  • the third bridge segment 214 realizes the connection between the first bridge segment 212 and the second bridge segment 213.
  • the strength of the first conductive bridge 21 in this structure is relatively high, and due to the arrangement of the first through holes 211, the first conductive bridge 21 has a high strength.
  • the area of the conductive bridge 21 will not become larger, so as to reduce the warpage problem of the main body 10 .
  • the first bridging section 212 , the second bridging section 213 and the third bridging section 214 are all similar to a rectangular structure, and form an H-shaped structure. At least one first through hole 211 is provided on the first bridge section 212 , the second bridge section 213 and the third bridge section 214 .
  • the first bridging section 212, the second bridging section 213, and the third bridging section 214 may be a one-piece structure.
  • first bridging section 212 , the second bridging section 213 and the third bridging section 214 may also be formed by connecting a plurality of independent structures.
  • any one of the second conductive bridge 22 , the third conductive bridge 23 and the fourth conductive bridge may be the structure shown in FIG. 6 .
  • the first conductive bridge 21 includes: a first bridge segment 212, one end of the first bridge segment 212 is connected to the body 10; a second bridge segment 213, one end of the second bridge segment 213 is connected to the body 10; a third bridge segment 214, one end of the third bridge segment 214 is connected to the other end of the first bridge segment 212, one end of the third bridge segment 214 is connected to the other end of the second bridge segment 213, and the other end of the third bridge segment 214 is connected to the body 10; wherein , at least one of the first bridging section 212 , the second bridging section 213 and the third bridging section 214 is provided with a first through hole 211 .
  • the first conductive bridge 21 is composed of a first bridge segment 212 , a second bridge segment 213 and a third bridge segment 214 .
  • the first bridge segment 212 , the second bridge segment 213 and the third bridge segment One end of the 214 is connected to the same point, and the other end is connected to the main body 10 respectively.
  • the strength of the first conductive bridge 21 in this structural form is high, and due to the arrangement of the first through holes 211 , the area of the first conductive bridge 21 will not increase, thereby reducing the warpage problem of the main body 10 .
  • the first bridging section 212 , the second bridging section 213 and the third bridging section 214 are all similar to a rectangular structure, and form a Y-shaped structure. At least one first through hole 211 is provided on the first bridge section 212 , the second bridge section 213 and the third bridge section 214 .
  • first bridging section 212 , the second bridging section 213 and the third bridging section 214 may also be formed by connecting a plurality of independent structures.
  • any one of the second conductive bridge 22 , the third conductive bridge 23 and the fourth conductive bridge may be in the structural form shown in FIG. 7 .
  • the conductive layer 20 includes a first conductive bridge 21 and a second conductive bridge 22
  • the first conductive bridge 21 and the second conductive bridge 22 are the structures shown in FIG. 6 and FIG. 7 , respectively. .
  • An embodiment of the present disclosure also provides a semiconductor structure including the above-mentioned package substrate and chip.
  • an opening area 11 is formed on the body 10 of the package substrate, and the first conductive bridge 21 and the second conductive bridge 22 are arranged in the opening area 11 at intervals, so that the signal of the conductive layer 20 can be enhanced.
  • the transmission quality is improved, and the twist resistance of the body 10 can be increased by controlling the widths of the first conductive bridges 21 and the second conductive bridges 22 , and the conductive layer 20 can be reduced by arranging the first through holes 211 on the first conductive bridges 21 . Therefore, the warpage problem of the body 10 is reduced, thereby ensuring the reliable connection between the chip and the package substrate.

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Abstract

本公开涉及半导体技术领域，提出了一种封装基板及具有其的半导体结构。封装基板包括本体和导电层，本体包括开口区域；导电层设置于开口区域，导电层包括第一导电桥和第二导电桥，第一导电桥和第二导电桥间隔设置；其中，第一导电桥上设置有第一通孔。开口区域内设置有相间隔的第一导电桥和第二导电桥，能够增强导电层信号传输品质，并能够通过控制第一导电桥和第二导电桥的宽度来增加本体的抗扭曲能力，而通过在第一导电桥上设置有第一通孔可以降低导电层的总体面积，以此降低本体出现的翘曲问题，从结构上改善封装基板的使用性能。

Description

封装基板及具有其的半导体结构
交叉引用
本公开要求于2021年02月05日提交的申请号为202110164416.7、名称为“封装基板及具有其的半导体结构”的中国专利申请的优先权，该中国专利申请的全部内容通过引用全部并入本文。
技术领域
本公开涉及半导体技术领域，尤其涉及一种封装基板及具有其的半导体结构。
背景技术
半导体结构的制造过程中，封装基板较为常用，由于封装基板的结构限制，在使用时封装基板容易出现部分扭曲变形或者整体翘曲的问题，影响连接效果。
发明内容
本公开提供一种封装基板及具有其的半导体结构，以改善封装基板的性能。
根据本公开的第一个方面，提供了一种封装基板，包括：
本体，本体包括开口区域；
导电层，导电层设置于开口区域，导电层包括第一导电桥和第二导电桥，第一导电桥和第二导电桥间隔设置；
其中，第一导电桥上设置有第一通孔。
根据本公开的第二个方面，提供了一种半导体结构，包括上述的封装基板和芯片。
本公开的封装基板通过在本体上形成有开口区域，且开口区域内设置有相间隔的第一导电桥和第二导电桥，能够增强导电层信号传输品质，并能够通过控制第一导电桥和第二导电桥的宽度来增加本体的抗扭曲能力，而通过在第一导电桥上设置有第一通孔可以降低导电层的总体面积，以此降低本体出现的翘曲问题，从结构上改善封装基板的使用性能。
附图说明
通过结合附图考虑以下对本公开的优选实施方式的详细说明，本公开的各种目标，特征和优点将变得更加显而易见。附图仅为本公开的示范性图解，并非一定是按比例绘制。 在附图中，同样的附图标记始终表示相同或类似的部件。其中：
图1是根据一示例性实施方式示出的一种封装基板的结构示意图；
图2是根据一示例性实施方式示出的一种封装基板的第一导电桥的第一个实施例的结构示意图；
图3是根据一示例性实施方式示出的一种封装基板的第一导电桥的第二个实施例的结构示意图；
图4是根据一示例性实施方式示出的一种封装基板的第一导电桥的第三个实施例的结构示意图；
图5是根据一示例性实施方式示出的一种封装基板的第一导电桥的第四个实施例的结构示意图；
图6是根据一示例性实施方式示出的一种封装基板的第一导电桥的第五个实施例的结构示意图；
图7是根据一示例性实施方式示出的一种封装基板的第一导电桥的第六个实施例的结构示意图；
图8是根据另一示例性实施方式示出的一种封装基板的结构示意图。
附图标记说明如下：
10、本体；11、开口区域；111、第一壁面；112、第二壁面；20、导电层；21、第一导电桥；211、第一通孔；212、第一桥接段；213、第二桥接段；214、第三桥接段；22、第二导电桥；221、第二通孔；23、第三导电桥；231、第三通孔；24、间隙；30、导电凸点；31、限位区域。
具体实施方式
体现本公开特征与优点的典型实施例将在以下的说明中详细叙述。应理解的是本公开能够在不同的实施例上具有各种的变化，其皆不脱离本公开的范围，且其中的说明及附图在本质上是作说明之用，而非用以限制本公开。
在对本公开的不同示例性实施方式的下面描述中，参照附图进行，附图形成本公开的一部分，并且其中以示例方式显示了可实现本公开的多个方面的不同示例性结构，系统和步骤。应理解的是，可以使用部件，结构，示例性装置，系统和步骤的其他特定方案，并且可在不偏离本公开范围的情况下进行结构和功能性修改。而且，虽然本说明书中可使用术语“之上”，“之间”，“之内”等来描述本公开的不同示例性特征和元件，但是这些术语用 于本文中仅出于方便，例如根据附图中的示例的方向。本说明书中的任何内容都不应理解为需要结构的特定三维方向才落入本公开的范围内。
本公开的一个实施例提供了一种封装基板，请参考图1，封装基板包括：本体10，本体10包括开口区域11；导电层20，导电层20设置于开口区域11，导电层20包括第一导电桥21和第二导电桥22，第一导电桥21和第二导电桥22间隔设置；其中，第一导电桥21上设置有第一通孔211。
本公开一个实施例的封装基板通过在本体10上形成有开口区域11，且开口区域11内设置有相间隔的第一导电桥21和第二导电桥22，能够增强导电层20信号传输品质，并能够通过控制第一导电桥21和第二导电桥22的宽度来增加本体10的抗扭曲能力，而通过在第一导电桥21上设置有第一通孔211可以降低导电层20的总体面积，以此降低本体10出现的翘曲问题，从结构上改善封装基板的使用性能。
需要说明的是，本体10包括底部表面和顶部表面，底部表面和顶部表面相对设置，顶部表面可以用于与芯片相连接，底部表面上可以与外部导电凸点等部件相连接。
开口区域11位于本体10的中部区域，即开口区域11在本体10的外边缘内侧，不与本体10的外边缘相交。
本实施例中，开口区域11位于底部表面上，底部表面的中间区域设置有开口区域11，开口区域11中形成有导电层20。
在一些实施例中，导电层20可以由第一导电桥21和第二导电桥22组成，即在开口区域11内设置有独立的第一导电桥21和第二导电桥22，而第一导电桥21和第二导电桥22的宽度均可以适当增加，以此提高导电层20强度，在增加宽度的基础上，为了不增加导电层20的面积，可以在第一导电桥21上增加第一通孔211，以此降低导电层20的面积，即可以整体上降低底部表面上的底部导电材料层的占用面积。
相应地，本体10的顶部表面也设置有顶部导电材料层，通过降低底部导电材料层的面积可以使得顶部导电材料层的面积和底部导电材料层的面积尽可能地接近，以此进一步降低本体10出现的翘曲问题。
在一个实施例中，导电层20可以是铜层、铝层或者钨层等。
在一些实施例中，导电层20可以由一个第一导电桥21和多个第二导电桥22组成，而第一导电桥21和第二导电桥22间隔设置，相邻的两个第二导电桥22也间隔设置，对于第一导电桥21和多个第二导电桥22的排布方式此处不作限定。
在一些实施例中，导电层20也可以由多个第一导电桥21和一个第二导电桥22组成。
在一些实施例中，导电层20也可以由多个第一导电桥21和多个第二导电桥22组成。
在一个实施例中，第一导电桥21和第二导电桥22的结构可以相类似，即第一导电桥21和第二导电桥22的外形可以大体相一致。在某些实施例中，第一导电桥21和第二导电桥22可以是完全不同的两个结构。
在一个实施例中，如图1所示，封装基板还包括：导电凸点30，导电凸点30设置在本体10上，且位于开口区域11的外侧。
可选地，开口区域11的上方和下方均具有导电凸点30，开口区域11的壁面位于导电凸点30之间，即开口区域11的侧壁距离导电凸点30外边缘之间均具有一定的距离，以此避免本体10局部强度较弱的问题，避免本体10出现扭曲变形等问题。
需要说明的是，开口区域11的壁面位于导电凸点30之间，即多个导电凸点30的外边缘连接而成的最大区域位于开口区域11的外侧。具体的，位于开口区域11的上方的多个导电凸点30连接线为第一直线，位于开口区域11的下方的多个导电凸点30连接线为第二直线，上下两侧导电凸点30在开口区域11的左右两侧分别形成第三直线和第四直线，第一直线、第二直线、第三直线以及第四直线形成一个区域，而开口区域11的壁面位于此区域内。
在一个实施例中，结合图1所示，壁面包括相对的两个第一壁面111和相对的两个第二壁面112，第一壁面111沿开口区域11的宽度方向延伸，第二壁面112沿开口区域11的长度方向延伸；其中，最外侧的上下两个导电凸点30的外边缘的连线围成限位区域31，第一壁面111位于限位区域31内，即第一壁面111距离本体10外边缘的垂直距离不会太小，从而保证本体10左右两侧的强度。
结合图1，位于本体10最外侧的上下两个导电凸点30的外边缘的连接线形成了限位区域31，而位于最外侧的导电凸点30与本体10外边缘具有一定的距离，因此可以保证第一壁面111距离本体10外边缘有足够的距离，不会出现开口区域11左右两侧较窄的问题。
在一个实施例中，导电凸点30可以是铜、铝或者钨等材料。
在一些实施例中，本体10上可以设置有排气孔，导电层20不遮挡排气孔，其中，多个排气孔可以等间距布置。
在一个实施例中，第一通孔211为多个，多个第一通孔211间隔地设置在第一导电桥21上，即相邻的两个第一通孔211彼此不连通，从而能够保证第一导电桥21本身的结构强度，且能够进一步减少导电层20的面积。
在一些实施例中，多个第一通孔211可以在第一导电桥21上任意排布。
在一些实施例中，多个第一通孔211沿第一导电桥21的长度方向间隔设置，即在相邻的两个第一通孔211之间保留有第一导电桥21的连接部分，且此连接部分位于第一导电桥21的宽度方向上，一定程度上能够避免第一导电桥21由于第一通孔211的存在而使得强度降低过多的问题。
需要说明的是，当第一导电桥21为规则的矩形结构时，此时矩形结构的长边形成的方向为长度方向。而在第一导电桥21为不规则的结构时，例如有多个类似矩形结构的部分组成，此时第一导电桥21的长度方向可以理解为类似矩形结构的长度方向。
在一个实施例中，第一导电桥21和第二导电桥22之间形成间隙24，即开口区域11可以是一个大开口，从而在形成第一导电桥21和第二导电桥22后，第一导电桥21和第二导电桥22之间没有任何阻挡物，即间隙24为气隙。
可选地，间隙24内填充有导热部，以此将导电层20形成的热量快速传导出去。
在一些实施例中，导热部可以是石墨烯材料或者导热硅胶等，此处不作限定，可以根据实际需求进行选择。
在一些实施例中，多个第一通孔211可以是结构完全相同的通孔，在某些实施例中，也不排除多个第一通孔211中的至少一个与其他的结构不同。
在一个实施例中，第一通孔211的孔壁包括弧面和平面中的至少之一，即第一通孔211的形状可以根据实际需求进行确定，保证第一导电桥21具有足够强度的基础上，可以尽量减小第一导电桥21的面积。
可选地，第一通孔211可以是矩形孔、三角形孔、圆孔、椭圆孔。
在一些实施例中，第一通孔211的孔壁包括弧面和平面组成的不规则孔。
在一些实施例中，第一通孔211可以是多边形孔，第一通孔211的孔壁的面可以大于4。
在一个实施例中，如图1所示，第二导电桥22上设置有第二通孔221，即通过在第二通孔221的设置可以进一步减小导电层20的面积，以此降低本体10出现的翘曲问题。
在一个实施例中，第二通孔221为多个，多个第二通孔221间隔地设置在第二导电桥22上，即相邻的两个第二通孔221彼此不连通，从而能够保证第二导电桥22本身的结构强度，且能够进一步减少导电层20的面积。
在一些实施例中，多个第二通孔221可以在第二导电桥22上任意排布。
在一些实施例中，多个第二通孔221沿第二导电桥22的长度方向间隔设置，即在相邻的两个第二通孔221之间保留有第二导电桥22的连接部分，且此连接部分位于第二导 电桥22的宽度方向上，一定程度上能够避免第二导电桥22由于第二通孔221的存在而使得强度降低过多的问题。
需要说明的是，当第二导电桥22为规则的矩形结构时，此时矩形结构的长边形成的方向为长度方向。而在第二导电桥22为不规则的结构时，例如有多个类似矩形结构的部分组成，此时第二导电桥22的长度方向可以理解为类似矩形结构的长度方向。
在一些实施例中，多个第二通孔221可以是结构完全相同的通孔，在某些实施例中，也不排除多个第二通孔221中的至少一个与其他的结构不同。
在一个实施例中，第二通孔221的孔壁包括弧面和平面中的至少之一，即第二通孔221的形状可以根据实际需求进行确定，保证第二导电桥22具有足够强度的基础上，可以尽量减小第二导电桥22的面积。
可选地，第二通孔221可以是矩形孔、三角形孔、圆孔、椭圆孔。
在一些实施例中，第二通孔221的孔壁包括弧面和平面组成的不规则孔。
在一些实施例中，第二通孔221可以是多边形孔，第二通孔221的孔壁的面可以大于4。
在一个实施例中，第一通孔211和第二通孔221的形状可以完全相一致。在某些实施例中，第一通孔211和第二通孔221的形状也可以不相同，此处不作限定。
在一个实施例中，如图1所示，导电层20还包括：第三导电桥23，第三导电桥23与第一导电桥21间隔设置，第三导电桥23与第二导电桥22间隔设置，即增加导电层20的独立导电桥的个数，以此满足连接需求。
在一些实施例中，第一导电桥21、第二导电桥22以及第三导电桥23可以沿某个方向依次设置。
在一些实施例中，第一导电桥21、第二导电桥22以及第三导电桥23的设置顺序可以沿某个方向随意设置。
在一个实施例中，如图1所示，开口区域11可以是一个矩形区域，此时第一导电桥21、第二导电桥22以及第三导电桥23可以沿开口区域11的长度方向间隔设置。
可选地，第一导电桥21与第二导电桥22之间的间距等于第二导电桥22与第三导电桥23之间的间距，即第一导电桥21、第二导电桥22以及第三导电桥23可以沿着开口区域11的长度方向间隔设置，以此保证本体10的整体强度排布较为均布，避免出现局部较弱的问题。
在一个实施例中，开口区域11可以是由多个矩形区域组成的开口区域，例如，以一 个矩形区域为中心区域，四个矩形区域分别位于中心区域的四个方位，此时第一导电桥21、第二导电桥22以及第三导电桥23可以根据实际需求进行位置排布。第一导电桥21、第二导电桥22以及第三导电桥23的设置数量不作限定。
在一个实施例中，如图1所示，第三导电桥23上设置有第三通孔231，即通过在第三通孔231的设置可以进一步减小导电层20的面积，以此降低本体10出现的翘曲问题。
在一个实施例中，第三通孔231为多个，多个第三通孔231间隔地设置在第三导电桥23上，即相邻的两个第三通孔231彼此不连通，从而能够保证第三导电桥23本身的结构强度，且能够进一步减少导电层20的面积。
在一些实施例中，多个第三通孔231可以在第三导电桥23上任意排布。
在一些实施例中，多个第三通孔231沿第三导电桥23的长度方向间隔设置，即在相邻的两个第三通孔231之间保留有第三导电桥23的连接部分，且此连接部分位于第三导电桥23的宽度方向上，一定程度上能够避免第三导电桥23由于第三通孔231的存在而使得强度降低过多的问题。
需要说明的是，当第三导电桥23为规则的矩形结构时，此时矩形结构的长边形成的方向为长度方向。而在第三导电桥23为不规则的结构时，例如有多个类似矩形结构的部分组成，此时第三导电桥23的长度方向可以理解为类似矩形结构的长度方向。
在一些实施例中，多个第三通孔231可以是结构完全相同的通孔，在某些实施例中，也不排除多个第三通孔231中的至少一个与其他的结构不同。
在一个实施例中，第三通孔231的孔壁包括弧面和平面中的至少之一，即第三通孔231的形状可以根据实际需求进行确定，保证第三导电桥23具有足够强度的基础上，可以尽量减小第三导电桥23的面积。
可选地，第三通孔231可以是矩形孔、三角形孔、圆孔、椭圆孔。
在一些实施例中，第三通孔231的孔壁包括弧面和平面组成的不规则孔。
在一些实施例中，第三通孔231可以是多边形孔，第三通孔231的孔壁的面可以大于4。
在一些实施例中，第三导电桥23的结构形式可以与第一导电桥21和第二导电桥22中的一个相类似。
在一个实施例中，第一通孔211、第二通孔221和第三通孔231的形状可以完全相一致。在某些实施例中，第一通孔211、第二通孔221和第三通孔231中的至少两个的形状也可以不相同，此处不作限定。
在一个实施例中，导电层20还可以包括第四导电桥，第四导电桥也可以设置有类似上述的第一通孔211、第二通孔221或第三通孔231的第四通孔。
可选地，第四导电桥的结构形式可以完全不同于第一导电桥21、第二导电桥22以及第三导电桥23。或者，第四导电桥的结构形式可以与第一导电桥21、第二导电桥22以及第三导电桥23中的至少之一相一致，此处不作限定。
在一些实施例中，第一导电桥21、第二导电桥22、第三导电桥23以及第四导电桥中的任意之一可以是多个。
在一些实施例中，第一导电桥21、第二导电桥22、第三导电桥23以及第四导电桥可以等间距设置，即多个导电桥可以等间距设置。
在一个实施例中，如图2至图5所示，第一导电桥21为矩形结构。
可选地，如图2所示，第一导电桥21为矩形结构，矩形结构内的第一通孔211为至少两个，第一通孔211的形状均为正方形。
可选地，如图3所示，第一导电桥21为矩形结构，矩形结构内的第一通孔211为至少两个，第一通孔211的形状均为长方形。
可选地，如图4所示，第一导电桥21为矩形结构，矩形结构内的第一通孔211为至少两个，第一通孔211的形状均为圆形。
可选地，如图5所示，第一导电桥21为矩形结构，矩形结构内的第一通孔211为至少两个，第一通孔211的形状均为菱形。
需要说明的是，第二导电桥22、第三导电桥23以及第四导电桥中的任意之一均可以是图2至图5中所示出的结构形式。
在一个实施例中，第一导电桥21包括：第一桥接段212，第一桥接段212的两端均连接本体10；第二桥接段213，第二桥接段213的两端均连接本体10，第一桥接段212和第二桥接段213间隔设置；第三桥接段214，第三桥接段214的两端分别连接第一桥接段212和第二桥接段213；其中，第一桥接段212、第二桥接段213以及第三桥接段214中的至少之一上设置有第一通孔211。
具体的，结合图6所示，第一导电桥21由第一桥接段212、第二桥接段213以及第三桥接段214组成，第一桥接段212和第二桥接段213实现了与本体10的连接，而第三桥接段214实现对第一桥接段212和第二桥接段213的连接，此结构形式的第一导电桥21强度较高，且由于第一通孔211的设置，第一导电桥21的面积也不会变大，以此减小本体10出现的翘曲问题。
第一桥接段212、第二桥接段213以及第三桥接段214均类似一个矩形结构，且形成了类似H形的结构。第一桥接段212、第二桥接段213以及第三桥接段214上均设置有至少一个第一通孔211。
在一些实施例中，第一桥接段212、第二桥接段213以及第三桥接段214可以是一体成型结构。
在一些实施例中，第一桥接段212、第二桥接段213以及第三桥接段214也可以是由多个独立的结构相连接形成。
需要说明的是，第二导电桥22、第三导电桥23以及第四导电桥中的任意之一均可以是图6中所示出的结构形式。
在一个实施例中，第一导电桥21包括：第一桥接段212，第一桥接段212的一端连接本体10；第二桥接段213，第二桥接段213的一端连接本体10；第三桥接段214，第三桥接段214的一端连接第一桥接段212的另一端，第三桥接段214的一端连接第二桥接段213的另一端，第三桥接段214的另一端连接本体10；其中，第一桥接段212、第二桥接段213以及第三桥接段214中的至少之一上设置有第一通孔211。
具体的，结合图7所示，第一导电桥21由第一桥接段212、第二桥接段213以及第三桥接段214组成，第一桥接段212、第二桥接段213以及第三桥接段214的一端连接于同一点，而另一端分别连接于本体10上。本结构形式的第一导电桥21强度较高，且由于第一通孔211的设置，第一导电桥21的面积也不会变大，以此减小本体10出现的翘曲问题。
第一桥接段212、第二桥接段213以及第三桥接段214均类似一个矩形结构，且形成了类似Y形的结构。第一桥接段212、第二桥接段213以及第三桥接段214上均设置有至少一个第一通孔211。
在一些实施例中，第一桥接段212、第二桥接段213以及第三桥接段214也可以是由多个独立的结构相连接形成。
需要说明的是，第二导电桥22、第三导电桥23以及第四导电桥中的任意之一均可以是图7中所示出的结构形式。
在一个实施例中，如图8所示，导电层20包括第一导电桥21和第二导电桥22，第一导电桥21和第二导电桥22分别为图6和图7所示的结构。
需要说明的是，对于本体10上部表面的具体结构设计可以参考相关技术中的结构形式，当然，也不排除上部表面的具体结构设计形成与本实施例中的下部表面的具体结构设计形式相类似。
本公开的一个实施例还提供了一种半导体结构，包括上述的封装基板和芯片。
本公开一个实施例的半导体结构通过在封装基板的本体10上形成有开口区域11，且开口区域11内设置有相间隔的第一导电桥21和第二导电桥22，能够增强导电层20信号传输品质，并能够通过控制第一导电桥21和第二导电桥22的宽度来增加本体10的抗扭曲能力，而通过在第一导电桥21上设置有第一通孔211可以降低导电层20的总体面积，以此降低本体10出现的翘曲问题，从而保证芯片和封装基板的可靠连接。
在一个实施例中，芯片可以为一个或多个，芯片连接于本体10上。
本领域技术人员在考虑说明书及实践这里公开的发明后，将容易想到本公开的其它实施方案。本公开旨在涵盖本发明的任何变型、用途或者适应性变化，这些变型、用途或者适应性变化遵循本公开的一般性原理并包括本公开未公开的本技术领域中的公知常识或惯用技术手段。说明书和示例实施方式仅被视为示例性的，本公开的真正范围和精神由前面的权利要求指出。
应当理解的是，本公开并不局限于上面已经描述并在附图中示出的精确结构，并且可以在不脱离其范围进行各种修改和改变。本公开的范围仅由所附的权利要求来限制。

Claims (20)

  1. 一种封装基板，包括：
    本体，所述本体包括开口区域；
    导电层，所述导电层设置于所述开口区域，所述导电层包括第一导电桥和第二导电桥，所述第一导电桥和所述第二导电桥间隔设置；
    其中，所述第一导电桥上设置有第一通孔。
  2. 根据权利要求1所述的封装基板，其中，所述第一通孔为多个，多个所述第一通孔间隔地设置在所述第一导电桥上。
  3. 根据权利要求2所述的封装基板，其中，多个所述第一通孔沿所述第一导电桥的长度方向间隔设置。
  4. 根据权利要求1所述的封装基板，其中，所述第一导电桥和所述第二导电桥之间形成间隙。
  5. 根据权利要求4所述的封装基板，其中，所述间隙内填充有导热部。
  6. 根据权利要求1所述的封装基板，其中，所述第一通孔的孔壁包括弧面和平面中的至少之一。
  7. 根据权利要求1所述的封装基板，其中，所述第二导电桥上设置有第二通孔。
  8. 根据权利要求7所述的封装基板，其中，所述第二通孔为多个。
  9. 根据权利要求1所述的封装基板，其中，所述导电层还包括：
    第三导电桥，所述第三导电桥与所述第一导电桥间隔设置，所述第三导电桥与所述第二导电桥间隔设置。
  10. 根据权利要求9所述的封装基板，其中，所述第三导电桥上设置有第三通孔。
  11. 根据权利要求9所述的封装基板，其中，所述第一导电桥、所述第二导电桥以及所述第三导电桥沿所述开口区域的长度方向间隔设置。
  12. 根据权利要求11所述的封装基板，其中，所述第一导电桥与所述第二导电桥之间的间距等于所述第二导电桥与所述第三导电桥之间的间距。
  13. 根据权利要求10所述的封装基板，其中，所述第三通孔为多个。
  14. 根据权利要求1所述的封装基板，其中，所述第一导电桥为矩形结构。
  15. 根据权利要求1所述的封装基板，其中，所述第一导电桥包括：
    第一桥接段，所述第一桥接段的两端均连接所述本体；
    第二桥接段，所述第二桥接段的两端均连接所述本体，所述第一桥接段和所述第二桥接段间隔设置；
    第三桥接段，所述第三桥接段的两端分别连接所述第一桥接段和所述第二桥接段；
    其中，所述第一桥接段、所述第二桥接段以及所述第三桥接段中的至少之一上设置有所述第一通孔。
  16. 根据权利要求1所述的封装基板，其中，所述第一导电桥包括：
    第一桥接段，所述第一桥接段的一端连接所述本体；
    第二桥接段，所述第二桥接段的一端连接所述本体；
    第三桥接段，所述第三桥接段的一端连接所述第一桥接段的另一端，所述第三桥接段的一端连接所述第二桥接段的另一端，所述第三桥接段的另一端连接所述本体；
    其中，所述第一桥接段、所述第二桥接段以及所述第三桥接段中的至少之一上设置有所述第一通孔。
  17. 根据权利要求15或16所述的封装基板，其中，所述第一桥接段、所述第二桥接段以及所述第三桥接段是一体成型结构。
  18. 根据权利要求1所述的封装基板，其中，所述封装基板还包括：
    导电凸点，所述导电凸点设置在所述本体上，且位于所述开口区域的外侧；
    其中，所述开口区域的上方和下方均具有所述导电凸点，所述开口区域的壁面位于所述导电凸点之间。
  19. 根据权利要求18所述的封装基板，其中，所述壁面包括相对的两个第一壁面和相对的两个第二壁面，所述第一壁面沿所述开口区域的宽度方向延伸，所述第二壁面沿所述开口区域的长度方向延伸；
    其中，最外侧的上下两个所述导电凸点的外边缘的连线围成限位区域，所述第一壁面位于所述限位区域内。
  20. 一种半导体结构，包括权利要求1至19中任一项所述的封装基板和芯片。
PCT/CN2021/109312 2021-02-05 2021-07-29 封装基板及具有其的半导体结构 WO2022166132A1 (zh)

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