WO2022166133A1 - 封装基板及具有其的半导体结构 - Google Patents

封装基板及具有其的半导体结构 Download PDF

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Publication number
WO2022166133A1
WO2022166133A1 PCT/CN2021/109320 CN2021109320W WO2022166133A1 WO 2022166133 A1 WO2022166133 A1 WO 2022166133A1 CN 2021109320 W CN2021109320 W CN 2021109320W WO 2022166133 A1 WO2022166133 A1 WO 2022166133A1
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Prior art keywords
conductive
area
bridge
hole
conductive bridge
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PCT/CN2021/109320
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English (en)
French (fr)
Inventor
王海林
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长鑫存储技术有限公司
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Priority to US17/582,171 priority Critical patent/US20220254720A1/en
Publication of WO2022166133A1 publication Critical patent/WO2022166133A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49838—Geometry or layout

Definitions

  • the present disclosure relates to the field of semiconductor technology, and in particular, to a package substrate and a semiconductor structure having the same.
  • the substrate In the process of chip packaging and manufacturing, the substrate is more commonly used.
  • the gas When the substrate is packaged, due to its structural limitation, the gas is not discharged in time during the packaging process, and the problem of internal voids is prone to occur.
  • the present disclosure provides a package substrate and a semiconductor structure having the same to improve the performance of the package substrate.
  • a package substrate comprising:
  • the body includes an opening area
  • any adjacent conductive bridges have a corresponding distance value
  • a package substrate comprising:
  • the body includes an opening area
  • the plurality of conductive bridges include a first conductive bridge, a second conductive bridge and a third conductive bridge, the first conductive bridge, the second conductive bridge and the third conductive bridge are sequentially arranged in the opening area;
  • the distance value between the first conductive bridge and the second conductive bridge is not equal to the distance value between the second conductive bridge and the third conductive bridge.
  • a package substrate comprising:
  • the body includes an opening area, the opening area includes an opposite first side wall and a second side wall, and the encapsulant can enter the opening area from the first side wall and flow to the second side wall;
  • the arrangement density of the conductive bridges close to the first sidewall is greater than the arrangement density of the conductive bridges close to the second sidewall.
  • a semiconductor structure including the above-mentioned package substrate and chip.
  • the package substrate of the present disclosure can enhance the signal transmission quality of the conductive bridges by forming an opening area on the body, and arranging a plurality of spaced conductive bridges in the opening area. And since the distance values formed between the plurality of conductive bridges are not all equal, that is, some conductive bridges distributed in the opening area are relatively dense, so that during the packaging process of the packaging substrate, the packaging resin can be blocked. In this way, the flow rate of the encapsulation resin is slowed down to ensure that the gas in the opening area can be discharged in time, so as to avoid the problem of internal voids, thereby improving the performance of the encapsulation substrate.
  • FIG. 1 is a schematic structural diagram of a packaging substrate according to an exemplary embodiment
  • FIG. 2 is a schematic structural diagram of a first embodiment of a first conductive bridge of a packaging substrate according to an exemplary embodiment
  • FIG. 3 is a schematic structural diagram of a second embodiment of a first conductive bridge of a packaging substrate according to an exemplary embodiment
  • FIG. 4 is a schematic structural diagram of a third embodiment of a first conductive bridge of a packaging substrate according to an exemplary embodiment
  • FIG. 5 is a schematic structural diagram of a fourth embodiment of a first conductive bridge of a packaging substrate according to an exemplary embodiment
  • FIG. 6 is a schematic structural diagram of a fifth embodiment of a first conductive bridge of a packaging substrate according to an exemplary embodiment
  • FIG. 7 is a schematic structural diagram of a sixth embodiment of a first conductive bridge of a packaging substrate according to an exemplary embodiment.
  • the package substrate includes: a body 10, the body 10 includes an opening area 11; a plurality of conductive bridges, the plurality of conductive bridges are arranged in the opening area 11 at intervals, any Adjacent conductive bridges have corresponding distance values; wherein at least two distance values are not equal.
  • an opening area 11 is formed on the body 10 , and a plurality of spaced conductive bridges are arranged in the opening area 11 , so that the signal transmission quality of the conductive bridges can be enhanced. And since the distance values formed between the plurality of conductive bridges are not all equal, that is, some conductive bridges distributed in the opening area 11 are relatively dense, so that during the packaging process of the packaging substrate, the packaging resin can be blocked. , so as to slow down the flow rate of the encapsulation resin and ensure that the gas in the opening area 11 can be discharged in time, so as to avoid the problem of internal voids, thereby improving the performance of the encapsulation substrate.
  • Any adjacent conductive bridges have corresponding distance values, that is, a plurality of conductive bridges have a plurality of distance values, and the distance value is the distance between two adjacent conductive bridges.
  • the position close to the conductive bridge with a small distance value can be used as the inflow position of encapsulation resin.
  • the inflow rate of encapsulation resin will be relatively high, the The relatively dense conductive bridges can slow down the flow rate of the encapsulation resin, so as to ensure that the gas can be discharged reliably and avoid the formation of voids.
  • the subsequent flow velocity of the encapsulation resin will gradually decrease, so that relatively sparse conductive bridges can be provided.
  • the distance value between two adjacent conductive bridges when the outer edges of multiple conductive bridges are consistent, the distance value between any two adjacent conductive bridges can be the same two.
  • the distance value between the position points is based on a straight line parallel to the length direction of the opening area 11 as a standard. This straight line will form an intersection point with each conductive bridge, and the distance between two adjacent intersection points is the distance value.
  • the distance value here may be the direct minimum distance value between two adjacent conductive bridges.
  • the package substrate includes: a body 10, the body 10 includes an opening area 11; a plurality of conductive bridges, the plurality of conductive bridges include a first conductive bridge 21, a second conductive bridge 22 and a third conductive bridge 23, the first conductive bridge
  • the conductive bridges 21 , the second conductive bridges 22 and the third conductive bridges 23 are sequentially disposed in the opening region 11 ; wherein the distance between the first conductive bridges 21 and the second conductive bridges 22 is not equal to the distance between the second conductive bridges 22 and the third conductive bridges 22 Distance value between conductive bridges 23 .
  • the package substrate in this embodiment includes a first conductive bridge 21 , a second conductive bridge 22 and a third conductive bridge 23 sequentially disposed in the opening region 11 , and the distance between the first conductive bridge 21 and the second conductive bridge 22 is Not equal to the distance value between the second conductive bridge 22 and the third conductive bridge 23 .
  • the distance value between the first conductive bridge 21 and the second conductive bridge 22 is smaller than the distance value between the second conductive bridge 22 and the third conductive bridge 23 , and the encapsulation resin may first pass through the first conductive bridge 21 , and then flow to the second conductive bridge 22 and the third conductive bridge 23 .
  • the distance between the first conductive bridges 21 and the second conductive bridges 22 is greater than the distance between the second conductive bridges 22 and the third conductive bridges 23 , and the encapsulation resin may first pass through the third conductive bridges 23 , and then flow to the second conductive bridge 22 and the first conductive bridge 21 .
  • the package substrate includes: a body 10 , the body 10 includes an opening area 11 , the opening area 11 includes a first sidewall 111 and a second sidewall 112 opposite to each other, and the encapsulant can enter the opening through the first sidewall 111 .
  • the area 11 flows to the second sidewall 112; a plurality of conductive bridges are arranged in the opening area 11 at intervals; wherein, the arrangement density of the conductive bridges close to the first sidewall 111 among the plurality of conductive bridges is greater than that of the conductive bridges close to the first sidewall 111.
  • the arrangement density of the conductive bridges on the two sidewalls 112 are examples of the conductive bridges close to the first sidewall 111 .
  • the package substrate in this embodiment includes a plurality of conductive bridges disposed in the opening region 11 at intervals.
  • the arrangement densities of the plurality of conductive bridges are different.
  • the arrangement density of the conductive bridges on the second sidewall 112 is relatively sparse, that is, the conductive bridges near the entrance of the encapsulant are denser, so that the flow rate of the encapsulant can be slowed down, so as to ensure that the gas can be discharged reliably and avoid the formation of voids.
  • the encapsulant may be an encapsulating resin.
  • the initial speed of the encapsulation resin injection molding is relatively fast, and the residual air is easily reversed by the encapsulation resin to form voids.
  • the increased arrangement of conductive bridges can slow down the flow rate of the resin, ensure that the gas can be discharged reliably, and avoid the formation of voids. That is, the conductive bridges at the inflow port of the encapsulation resin are densely arranged.
  • the body 10 is provided with an exhaust hole 13 , and the exhaust hole 13 is arranged opposite to the gap 12 , that is, the conductive bridge avoids the exhaust hole 13
  • the air hole 13 can thus ensure that the exhaust hole 13 can realize timely exhaust.
  • the plurality of vent holes may be equally spaced.
  • any adjacent exhaust holes 13 have a corresponding hole spacing, that is, there are multiple hole spacings between multiple exhaust holes 13, and the hole spacing is the spacing between two adjacent exhaust holes 13,
  • the distance between at least two holes is not equal, that is, the plurality of exhaust holes 13 are also arranged according to the density, so as to meet the requirements of exhaust.
  • the exhaust hole 13 near the inflow port of the encapsulation resin may be relatively dense, that is, the flow velocity of the encapsulation resin is relatively large, so it is necessary to perform gas suction in time.
  • the subsequent exhaust holes 13 may be relatively sparse.
  • the pitches of the plurality of holes are all different, and the pitches of the plurality of holes gradually increase along the first length direction of the opening area 11 , that is, the arrangement of the exhaust holes 13 is dense to sparse along the flow direction of the encapsulation resin. , so as to ensure that the gas can be discharged in time, and there is no need to provide too many exhaust holes 13 .
  • the length direction of the opening area 11 includes a first length direction and a second length direction, and the first length direction and the second length direction are opposite directions.
  • the spacing between the plurality of holes gradually decreases along the second length direction of the opening area 11 .
  • the arrangement density of some of the exhaust holes 13 close to the first side wall 111 is greater than that of the part of the exhaust holes 13 close to the second side wall 112 . Further, the spacing between the plurality of holes gradually increases from the first side wall 111 to the extending direction of the second side wall 112 .
  • two adjacent conductive bridges between adjacent two exhaust holes 13 with the largest hole spacing have a maximum distance value, that is, the more sparsely arranged exhaust holes 13 correspond to the sparsely arranged exhaust holes 13 conductive bridges, so that slower flowing encapsulation resin corresponds to fewer conductive bridges and fewer vent holes 13 .
  • the plurality of conductive bridges are distributed at equal intervals, so as to ensure that the local strength of the package substrate between two adjacent vent holes 13 is consistent, so as to balance the local warpage.
  • the exhaust hole 13 includes a first exhaust hole, a second exhaust hole and a third exhaust hole, the first exhaust hole, the second exhaust hole and the third exhaust hole are arranged in sequence, There are multiple conductive bridges between an exhaust hole and the second exhaust hole, and there are multiple conductive bridges between the second exhaust hole and the third exhaust hole; wherein, the first exhaust hole and the second exhaust hole The distance value of adjacent conductive bridges between them is not equal to the distance value of adjacent conductive bridges between the second exhaust hole and the third exhaust hole, so that the arrangement of the conductive bridge and the exhaust hole can be guaranteed.
  • the gas is discharged in time to avoid the problem of internal voids.
  • the conductive bridges near the entrance of the encapsulant can be relatively dense, and the number of vent holes 13 can be relatively large, while the conductive bridges far from the entrance of the encapsulant can be relatively sparse, and the exhaust holes 13 The number can also be relatively small.
  • the number of vent holes 13 near the inlet of the encapsulant can be relatively small, but the conductive bridges between adjacent vent holes 13 can be arranged more densely, thereby reducing the number of vent holes 13 .
  • the flow rate of the encapsulant so as to achieve the effect of timely exhaust.
  • relatively more vent holes 13 can be provided at the position where the flow rate of the encapsulant is relatively high. If the flow rate of the encapsulant is still high at the position of the vent holes 13 , the density of the conductive bridges can be further increased.
  • the body 10 further includes a solder ball area 16 , the solder ball area 16 is located outside the opening area 11 , the package substrate further includes a conductive layer 30 , and the conductive layer 30 is located in the solder ball area 16 ,
  • the opening area 11 is located in the middle area of the body 10 , that is, the opening area 11 is inside the outer edge of the body 10 and does not intersect with the outer edge of the body 10 .
  • the conductive layer 30 is disposed around the opening area 11, and a plurality of cut through holes are formed on the conductive layer 30, that is, the area of the conductive layer 30 is reduced, and the cut through holes are used to form signal connection structures such as conductive bumps.
  • the surface of the body 10 includes a first area 14 and a second area 15 , and the first area 14 and the second area 15 are sequentially distributed along the length direction of the opening area 11 .
  • Both regions 15 contain conductive bridges and conductive layers 30, and the ratio of the sum of the areas of the conductive bridges and the conductive layers 30 in the first region 14 to the sum of the areas of the conductive bridges and the conductive layers 30 in the second region 15 is less than 1.1, that is, the area of the conductive material in the first area 14 and the second area 15 is basically the same, so as to balance the local strength of the package substrate, improve the overall warpage of the package substrate, and avoid the problem of serious local warpage.
  • the ratio of the sum of the areas of the conductive bridges and the conductive layers 30 in the second region 15 to the sum of the areas of the conductive bridges and the conductive layers 30 in the first region 14 is less than 1.1.
  • the conductive layer 30 of the first region 14 is provided with a plurality of first cut through holes 141
  • the conductive layer 30 of the second region 15 is provided with a plurality of second cut through holes 141 .
  • the area of the hole 151 and the conductive layer 30 becomes smaller, and the area of the conductive material in the first region 14 and the second region 15 is basically the same.
  • first cut through hole 141 and the second cut through hole 151 may have any shape, and the shape shown in FIG. There are through holes.
  • the area of the conductive bridges in the first area 14 is larger than the area of the conductive bridges in the second area 15 , and the area of the conductive layer 30 in the first area 14 is smaller than the area of the conductive bridges in the second area 15 . That is, the conductive bridges in the first area 14 are relatively densely arranged, while the conductive layers 30 in the first area 14 need to be relatively sparse. Correspondingly, the conductive bridges in the second area 15 are The conductive layer 30 needs to be denser, so as to balance the local strength of the package substrate and achieve the overall warpage balance of the package substrate.
  • the area of the conductive bridges in the first area 14 is smaller than that of the conductive bridges in the second area 15 , and the area of the conductive layer 30 in the first area 14 is larger than the area of the conductive bridges in the second area 15 .
  • the plurality of conductive bridges include: first conductive bridges 21 .
  • the first conductive bridges 21 are provided with first through holes 211 , which can reduce the overall area of the conductive bridges, thereby reducing the body 10. The warpage problem that occurs, improves the performance of the package substrate from the structure. .
  • the body 10 includes a bottom surface and a top surface, the bottom surface and the top surface are disposed oppositely, the top surface can be used for connecting with chips, and the bottom surface can be connected with components such as external conductive bumps.
  • the opening area 11 is located on the bottom surface, and the opening area 11 is provided in the middle area of the bottom surface.
  • the top surface of the body 10 is also provided with a top conductive material layer, and by reducing the area of the bottom conductive material layer, the area of the top conductive material layer and the area of the bottom conductive material layer can be made as close as possible, thereby further reducing the body 10 warping problem occurs.
  • the conductive bridge and conductive layer 30 may be a copper layer, an aluminum layer, a tungsten layer, or the like.
  • first through holes 211 there are multiple first through holes 211, and the multiple first through holes 211 are arranged on the first conductive bridge 21 at intervals, that is, two adjacent first through holes 211 are not connected to each other, so that the The structural strength of the first conductive bridge 21 itself is ensured, and the area of the conductive bridge can be further reduced.
  • the plurality of first through holes 211 may be arbitrarily arranged on the first conductive bridge 21 .
  • the plurality of first through holes 211 are arranged at intervals along the length direction of the first conductive bridges 21 , that is, a connection portion of the first conductive bridges 21 remains between two adjacent first through holes 211 , Moreover, the connection portion is located in the width direction of the first conductive bridge 21 , which can avoid the problem that the strength of the first conductive bridge 21 is excessively reduced due to the existence of the first through hole 211 to a certain extent.
  • the first conductive bridge 21 when the first conductive bridge 21 is a regular rectangular structure, the direction in which the long sides of the rectangular structure are formed is the longitudinal direction.
  • the first conductive bridge 21 has an irregular structure, for example, it is composed of a plurality of parts similar to a rectangular structure, and the length direction of the first conductive bridge 21 can be understood as the length direction of a similar rectangular structure.
  • the plurality of first through holes 211 may be through holes with the same structure, and in some embodiments, it is not excluded that at least one of the plurality of first through holes 211 is different from other structures.
  • the hole wall of the first through hole 211 includes at least one of an arc surface and a flat surface, that is, the shape of the first through hole 211 can be determined according to actual requirements to ensure that the first conductive bridge 21 has sufficient strength. Basically, the area of the first conductive bridge 21 can be reduced as much as possible.
  • the first through hole 211 may be a rectangular hole, a triangular hole, a circular hole, or an oval hole.
  • the hole wall of the first through hole 211 includes an irregular hole composed of an arc surface and a plane surface.
  • the first through hole 211 may be a polygonal hole, and the surface of the hole wall of the first through hole 211 may be greater than 4.
  • the plurality of conductive bridges further include: a second conductive bridge 22; a third conductive bridge 23, the first conductive bridge 21, the second conductive bridge 22 and the third conductive bridge 23 are arranged in sequence, and the first conductive bridge The distance value between 21 and the second conductive bridge 22 is not equal to the distance value between the second conductive bridge 22 and the third conductive bridge 23 .
  • the second conductive bridge 22 is provided with a second through hole 221 , that is, the area of the conductive bridge can be further reduced by the arrangement of the second through hole 221 , thereby reducing the body 10 warping problem occurs.
  • the plurality of second through holes 221 may be arbitrarily arranged on the second conductive bridge 22 .
  • the plurality of second through holes 221 are arranged at intervals along the length direction of the second conductive bridges 22 , that is, a connection portion of the second conductive bridges 22 remains between two adjacent second through holes 221 , Moreover, the connection portion is located in the width direction of the second conductive bridge 22 , which can avoid the problem that the strength of the second conductive bridge 22 is excessively reduced due to the existence of the second through hole 221 to a certain extent.
  • the second conductive bridge 22 when the second conductive bridge 22 is a regular rectangular structure, the direction in which the long sides of the rectangular structure are formed is the longitudinal direction.
  • the second conductive bridge 22 has an irregular structure, for example, it is composed of a plurality of parts similar to a rectangular structure, at this time, the length direction of the second conductive bridge 22 can be understood as the length direction of the similar rectangular structure.
  • the plurality of second through holes 221 may be through holes with identical structures, and in some embodiments, it is not excluded that at least one of the plurality of second through holes 221 is different from other structures.
  • the hole wall of the second through hole 221 includes at least one of an arc surface and a flat surface, that is, the shape of the second through hole 221 can be determined according to actual requirements, so as to ensure that the second conductive bridge 22 has sufficient strength Basically, the area of the second conductive bridge 22 can be reduced as much as possible.
  • the second through hole 221 may be a rectangular hole, a triangular hole, a circular hole, or an oval hole.
  • the hole wall of the second through hole 221 includes an irregular hole composed of an arc surface and a plane surface.
  • the second through hole 221 may be a polygonal hole, and the surface of the hole wall of the second through hole 221 may be greater than 4.
  • the shapes of the first through holes 211 and the second through holes 221 may be completely the same. In some embodiments, the shapes of the first through holes 211 and the second through holes 221 may also be different, which are not limited herein.
  • the opening area 11 may be a rectangular area, and in this case, the first conductive bridges 21 , the second conductive bridges 22 and the third conductive bridges 23 may be spaced along the length direction of the opening area 11 . .
  • the third conductive bridge 23 is provided with a third through hole 231 , that is, the configuration of the third through hole 231 can further reduce the area of the conductive bridge, thereby reducing the body 10 warping problem occurs.
  • the plurality of third through holes 231 may be arbitrarily arranged on the third conductive bridge 23 .
  • the plurality of third through holes 231 are arranged at intervals along the length direction of the third conductive bridges 23 , that is, a connection portion of the third conductive bridges 23 remains between two adjacent third through holes 231 , Moreover, the connection portion is located in the width direction of the third conductive bridge 23 , which can avoid the problem that the strength of the third conductive bridge 23 is excessively reduced due to the existence of the third through hole 231 to a certain extent.
  • the third conductive bridge 23 when the third conductive bridge 23 is a regular rectangular structure, the direction in which the long sides of the rectangular structure are formed is the longitudinal direction.
  • the third conductive bridge 23 has an irregular structure, for example, it is composed of a plurality of parts similar to a rectangular structure, at this time, the length direction of the third conductive bridge 23 can be understood as the length direction of the similar rectangular structure.
  • the plurality of third through holes 231 may be through holes with the same structure, and in some embodiments, it is not excluded that at least one of the plurality of third through holes 231 is different from other structures.
  • the hole wall of the third through hole 231 includes at least one of an arc surface and a flat surface, that is, the shape of the third through hole 231 can be determined according to actual requirements to ensure that the third conductive bridge 23 has sufficient strength. Basically, the area of the third conductive bridge 23 can be reduced as much as possible.
  • the third through hole 231 may be a rectangular hole, a triangular hole, a circular hole, or an oval hole.
  • the hole wall of the third through hole 231 includes an irregular hole composed of an arc surface and a plane surface.
  • the third through hole 231 may be a polygonal hole, and the face of the hole wall of the third through hole 231 may be greater than 4.
  • the structural form of the third conductive bridge 23 may be similar to one of the first conductive bridge 21 and the second conductive bridge 22 .
  • the shapes of the first through hole 211 , the second through hole 221 and the third through hole 231 may be completely the same. In some embodiments, the shapes of at least two of the first through hole 211 , the second through hole 221 and the third through hole 231 may also be different, which is not limited here.
  • the conductive bridge may further include a fourth conductive bridge, and the fourth conductive bridge may also be provided with a fourth through hole similar to the above-mentioned first through hole 211 , second through hole 221 or third through hole 231 .
  • the structure of the fourth conductive bridge may be completely different from that of the first conductive bridge 21 , the second conductive bridge 22 and the third conductive bridge 23 .
  • the structural form of the fourth conductive bridge may be consistent with at least one of the first conductive bridge 21 , the second conductive bridge 22 and the third conductive bridge 23 , which is not limited here.
  • any one of the first conductive bridge 21 , the second conductive bridge 22 , the third conductive bridge 23 and the fourth conductive bridge may be plural.
  • the first conductive bridge 21 is a rectangular structure.
  • the first conductive bridge 21 is a rectangular structure, there are at least two first through holes 211 in the rectangular structure, and the first through holes 211 are all square in shape.
  • the first conductive bridge 21 is a rectangular structure, there are at least two first through holes 211 in the rectangular structure, and the shapes of the first through holes 211 are all rectangles.
  • the first conductive bridge 21 has a rectangular structure, there are at least two first through holes 211 in the rectangular structure, and the shapes of the first through holes 211 are all circular.
  • the first conductive bridge 21 is a rectangular structure, there are at least two first through holes 211 in the rectangular structure, and the shapes of the first through holes 211 are all diamonds.
  • any one of the second conductive bridge 22 , the third conductive bridge 23 and the fourth conductive bridge may be the structure shown in FIGS. 2 to 5 .
  • the first conductive bridge 21 includes: a first bridge segment 212, both ends of which are connected to the body 10; a second bridge segment 213, both ends of which are connected to the body 10 , the first bridging section 212 and the second bridging section 213 are arranged at intervals; the third bridging section 214, the two ends of the third bridging section 214 are respectively connected to the first bridging section 212 and the second bridging section 213; wherein, the first bridging section 212 At least one of the second bridging section 213 and the third bridging section 214 is provided with a first through hole 211 .
  • the first conductive bridge 21 is composed of a first bridge segment 212 , a second bridge segment 213 and a third bridge segment 214 .
  • the first bridge segment 212 and the second bridge segment 213 are connected to the main body 10 .
  • the third bridge segment 214 realizes the connection between the first bridge segment 212 and the second bridge segment 213.
  • the strength of the first conductive bridge 21 in this structure is relatively high, and due to the arrangement of the first through holes 211, the first conductive bridge 21 has a high strength.
  • the area of the conductive bridge 21 will not become larger, so as to reduce the warpage problem of the main body 10 .
  • the first bridging section 212 , the second bridging section 213 and the third bridging section 214 are all similar to a rectangular structure, and form an H-shaped structure.
  • the first bridging section 212, the second bridging section 213 and the third bridging section 214 are all provided with at least one first through hole 211.
  • the first bridging section 212, the second bridging section 213, and the third bridging section 214 may be a one-piece structure.
  • first bridging section 212 , the second bridging section 213 and the third bridging section 214 may also be formed by connecting a plurality of independent structures.
  • any one of the second conductive bridge 22 , the third conductive bridge 23 and the fourth conductive bridge may be the structure shown in FIG. 6 .
  • the first conductive bridge 21 includes: a first bridge segment 212, one end of the first bridge segment 212 is connected to the body 10; a second bridge segment 213, one end of the second bridge segment 213 is connected to the body 10; a third bridge segment 214, one end of the third bridge segment 214 is connected to the other end of the first bridge segment 212, one end of the third bridge segment 214 is connected to the other end of the second bridge segment 213, and the other end of the third bridge segment 214 is connected to the body 10; wherein , at least one of the first bridging section 212 , the second bridging section 213 and the third bridging section 214 is provided with a first through hole 211 .
  • the first conductive bridge 21 is composed of a first bridge segment 212 , a second bridge segment 213 and a third bridge segment 214 .
  • the first bridge segment 212 , the second bridge segment 213 and the third bridge segment One end of the 214 is connected to the same point, and the other end is connected to the main body 10 respectively.
  • the strength of the first conductive bridge 21 in this structural form is high, and due to the arrangement of the first through holes 211 , the area of the first conductive bridge 21 will not increase, thereby reducing the warpage problem of the main body 10 .
  • the first bridging section 212 , the second bridging section 213 and the third bridging section 214 are all similar to a rectangular structure, and form a Y-shaped structure. At least one first through hole 211 is provided on the first bridge section 212 , the second bridge section 213 and the third bridge section 214 .
  • first bridging section 212 , the second bridging section 213 and the third bridging section 214 may also be formed by connecting a plurality of independent structures.
  • any one of the second conductive bridge 22 , the third conductive bridge 23 and the fourth conductive bridge may be in the structural form shown in FIG. 7 .
  • An embodiment of the present disclosure also provides a semiconductor structure including the above-mentioned package substrate and chip.
  • an opening area 11 is formed on the body 10 of the package substrate, and a plurality of spaced conductive bridges are arranged in the opening area 11, so that the signal transmission quality of the conductive bridge can be enhanced. And since the distance values formed between the plurality of conductive bridges are not all equal, that is, some conductive bridges distributed in the opening area 11 are relatively dense, so that during the packaging process of the packaging substrate, the packaging resin can be blocked. , so as to slow down the flow rate of the encapsulation resin and ensure that the gas in the opening area 11 can be discharged in time, thereby avoiding the problem of internal voids, thereby improving the performance of the semiconductor structure.

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Abstract

本公开涉及半导体技术领域，提出了一种封装基板及具有其的半导体结构。封装基板包括：本体和多个导电桥，本体包括开口区域；多个导电桥间隔地设置于开口区域，任意相邻导电桥具有相应的距离值；其中，至少两个距离值不相等。多个导电桥之间形成的多个距离值不都相等，即分布于开口区域内的某些导电桥相对较密，从而在对封装基板进行封装过程中，能够对封装树脂形成阻挡，以此减缓封装树脂的流动速率，保证开口区域内的气体能够及时排出，以此避免出现内部空洞问题，从而改善封装基板的性能。

Description

封装基板及具有其的半导体结构
交叉引用
本公开要求于2021年02月05日提交的申请号为202110164409.7、名称为“封装基板及具有其的半导体结构”的中国专利申请的优先权，该中国专利申请的全部内容通过引用全部并入本文。
技术领域
本公开涉及半导体技术领域，尤其涉及一种封装基板及具有其的半导体结构。
背景技术
芯片封装制造过程中，基板较为常用，在对基板进行封装处理时，由于其本身结构限定，封装过程中气体排出不及时，很容易出现内部空洞问题。
发明内容
本公开提供一种封装基板及具有其的半导体结构，以改善封装基板的性能。
根据本公开的第一个方面，提供了一种封装基板，包括：
本体，本体包括开口区域；
多个导电桥，多个导电桥间隔地设置于开口区域，任意相邻导电桥具有相应的距离值；
其中，至少两个距离值不相等。
根据本公开的第二个方面，提供了一种封装基板，包括：
本体，本体包括开口区域；
多个导电桥，多个导电桥包括第一导电桥、第二导电桥以及第三导电桥，第一导电桥、第二导电桥以及第三导电桥依次设置于开口区域；
其中，第一导电桥和第二导电桥之间的距离值不等于第二导电桥与第三导电桥之间的距离值。
根据本公开的第三个方面，提供了一种封装基板，包括：
本体，本体包括开口区域，开口区域包括相对的第一侧壁和第二侧壁，封装胶能够由第一侧壁进入开口区域并流动至第二侧壁；
多个导电桥，多个导电桥间隔地设置于开口区域；
其中，多个导电桥中靠近第一侧壁的导电桥的排列密度大于靠近第二侧壁的导电桥的排列密度。
根据本公开的第四个方面，提供了一种半导体结构，包括上述的封装基板和芯片。
本公开的封装基板通过在本体上形成有开口区域，且开口区域内设置有多个间隔的导电桥，能够增强导电桥信号传输品质。且由于多个导电桥之间形成的多个距离值不都相等，即分布于开口区域内的某些导电桥相对较密，从而在对封装基板进行封装过程中，能够对封装树脂形成阻挡，以此减缓封装树脂的流动速率，保证开口区域内的气体能够及时排出，以此避免出现内部空洞问题，从而改善封装基板的性能。
附图说明
通过结合附图考虑以下对本公开的优选实施方式的详细说明，本公开的各种目标，特征和优点将变得更加显而易见。附图仅为本公开的示范性图解，并非一定是按比例绘制。在附图中，同样的附图标记始终表示相同或类似的部件。其中：
图1是根据一示例性实施方式示出的一种封装基板的结构示意图；
图2是根据一示例性实施方式示出的一种封装基板的第一导电桥的第一个实施例的结构示意图；
图3是根据一示例性实施方式示出的一种封装基板的第一导电桥的第二个实施例的结构示意图；
图4是根据一示例性实施方式示出的一种封装基板的第一导电桥的第三个实施例的结构示意图；
图5是根据一示例性实施方式示出的一种封装基板的第一导电桥的第四个实施例的结构示意图；
图6是根据一示例性实施方式示出的一种封装基板的第一导电桥的第五个实施例的结构示意图；
图7是根据一示例性实施方式示出的一种封装基板的第一导电桥的第六个实施例的结构示意图。
附图标记说明如下：
10、本体；11、开口区域；111、第一侧壁；112、第二侧壁；12、间隙；13、排气孔；14、第一区域；141、第一切除通孔；15、第二区域；151、第二切除通孔；16、锡球区域；21、第一导电桥；211、第一通孔；212、第一桥接段；213、第二桥接段；214、第三桥接 段；22、第二导电桥；221、第二通孔；23、第三导电桥；231、第三通孔；30、导电层。
具体实施方式
体现本公开特征与优点的典型实施例将在以下的说明中详细叙述。应理解的是本公开能够在不同的实施例上具有各种的变化，其皆不脱离本公开的范围，且其中的说明及附图在本质上是作说明之用，而非用以限制本公开。
在对本公开的不同示例性实施方式的下面描述中，参照附图进行，附图形成本公开的一部分，并且其中以示例方式显示了可实现本公开的多个方面的不同示例性结构，系统和步骤。应理解的是，可以使用部件，结构，示例性装置，系统和步骤的其他特定方案，并且可在不偏离本公开范围的情况下进行结构和功能性修改。而且，虽然本说明书中可使用术语“之上”，“之间”，“之内”等来描述本公开的不同示例性特征和元件，但是这些术语用于本文中仅出于方便，例如根据附图中的示例的方向。本说明书中的任何内容都不应理解为需要结构的特定三维方向才落入本公开的范围内。
本公开的一个实施例提供了一种封装基板，请参考图1，封装基板包括：本体10，本体10包括开口区域11；多个导电桥，多个导电桥间隔地设置于开口区域11，任意相邻导电桥具有相应的距离值；其中，至少两个距离值不相等。
本公开一个实施例的封装基板通过在本体10上形成有开口区域11，且开口区域11内设置有多个间隔的导电桥，能够增强导电桥信号传输品质。且由于多个导电桥之间形成的多个距离值不都相等，即分布于开口区域11内的某些导电桥相对较密，从而在对封装基板进行封装过程中，能够对封装树脂形成阻挡，以此减缓封装树脂的流动速率，保证开口区域11内的气体能够及时排出，以此避免出现内部空洞问题，从而改善封装基板的性能。
任意相邻所述导电桥具有相应的距离值，即多个导电桥之间具有多个距离值，而距离值为相邻两个导电桥之间的间距。
需要说明的是，在通过封装树脂对封装基板进行封装时，可以以靠近距离值较小的导电桥位置处作为封装树脂的流入位置，考虑到封装树脂流入时的速率会相对较高，因此可以设置有相对较密的导电桥可以减缓封装树脂流动速度，以此保证气体能够可靠排出，避免空洞的形成。而后续封装树脂的流动速度会逐渐较小，从而可以设置有相对较疏的导电桥。
需要注意的是，对于相邻两个导电桥之间的距离值，当多个导电桥的外边缘均相一致 时，任意两个相邻导电桥之间的距离值均可以是相同的两个位置点之间的距离值，即以一条平行于开口区域11长度方向的直线为标准，此直线会与各个导电桥形成交点，而相邻两个交点之间的距离即为距离值。而在多个导电桥的中的至少一个导电桥的外边缘不等同于其他的导电桥的外边缘时，此处的距离值可以是相邻两个导电桥直接的最小距离值。
在一个实施例中，封装基板包括：本体10，本体10包括开口区域11；多个导电桥，多个导电桥包括第一导电桥21、第二导电桥22以及第三导电桥23，第一导电桥21、第二导电桥22以及第三导电桥23依次设置于开口区域11；其中，第一导电桥21和第二导电桥22之间的距离值不等于第二导电桥22与第三导电桥23之间的距离值。
本实施例中的封装基板包括依次设置于开口区域11的第一导电桥21、第二导电桥22以及第三导电桥23，且第一导电桥21和第二导电桥22之间的距离值不等于第二导电桥22与第三导电桥23之间的距离值。
在一些实施例中，第一导电桥21和第二导电桥22之间的距离值小于第二导电桥22与第三导电桥23之间的距离值，则封装树脂可以先通过第一导电桥21，然后流动至第二导电桥22与第三导电桥23。
在一些实施例中，第一导电桥21和第二导电桥22之间的距离值大于第二导电桥22与第三导电桥23之间的距离值，则封装树脂可以先通过第三导电桥23，然后流动至第二导电桥22与第一导电桥21。
在一个实施例中，封装基板，包括：本体10，本体10包括开口区域11，开口区域11包括相对的第一侧壁111和第二侧壁112，封装胶能够由第一侧壁111进入开口区域11并流动至第二侧壁112；多个导电桥，多个导电桥间隔地设置于开口区域11；其中，多个导电桥中靠近第一侧壁111的导电桥的排列密度大于靠近第二侧壁112的导电桥的排列密度。
本实施例中的封装基板包括多个间隔设置于开口区域11中的导电桥，多个导电桥的排布密度不相同，靠近第一侧壁111的导电桥的排布密度较密，而靠近第二侧壁112的导电桥的排布密度较疏，即靠近封装胶入口处的导电桥较密，从而可以减缓封装胶流动速度，以此保证气体能够可靠排出，避免空洞的形成。封装胶可以是封装树脂。
需要说明的是，封装树脂注塑初期速度较快，残余空气容易被封装树脂反包形成空洞，增加的导电桥排布可以减缓树脂流动速度，保证气体能够可靠排出，避免空洞的形成。即封装树脂流入口导电桥排布较密。
在一个实施例中，如图1所示，相邻两个导电桥之间具有间隙12，本体10上设置有 排气孔13，排气孔13与间隙12相对设置，即导电桥避开排气孔13，从而能够保证排气孔13实现及时排气。
在一个实施例中，排气孔13为多个，多个排气孔13间隔地设置在本体10上，且分别对应一个间隙12，以此保证塑封过程中，气体能够被及时排出，避免形成空洞。
在一些实施例中，多个排气孔可以等间距布置。
在一个实施例中，任意相邻排气孔13具有相应的孔间距，即多个排气孔13之间具有多个孔间距，孔间距为相邻两个排气孔13之间的间距，至少两个孔间距不相等，即多个排气孔13也按照疏密进行排布，从而适应排气的需求。
需要说明的，靠近封装树脂流入口处的排气孔13可以相对较密，即封装树脂的流动速度较大，因此需要进行气体的及时抽吸。而后续的排气孔13可以相对较疏。
在一个实施例中，多个孔间距均不相同，多个孔间距沿开口区域11的第一长度方向逐渐增加，即沿着封装树脂流动方向排气孔13的排布有密到疏排布，以此保证气体可以及时排出，且不用设置有过多的排气孔13。
需要注意的是，开口区域11的长度方向包括第一长度方向和第二长度方向，第一长度方向和第二长度方向为相反的两个方向，因此，多个孔间距沿开口区域11的第一长度方向逐渐增加，则多个孔间距沿开口区域11的第二长度方向逐渐减小。
需要说明的是，多个排气孔13中靠近第一侧壁111的部分排气孔13的排列密度大于靠近第二侧壁112的部分排气孔13的排列密度。进一步地，多个孔间距由第一侧壁111向第二侧壁112的延伸方向上逐渐增加。
在一个实施例中，最大孔间距的相邻两个排气孔13之间的相邻两个导电桥之间具有最大距离值，即排布较疏的排气孔13对应排布较疏的导电桥，从而使得流动较慢的封装树脂对应较少的导电桥和较少的排气孔13。
在一个实施例中，相邻两个排气孔13之间具有至少两个导电桥，即在保证能够可靠排气的情况下，使得排气孔13不至于过多，减小加工过程，且避免对封装基板本身的结构造成影响。
在一个实施例中，至少相邻两个排气孔13之间具有至少三个导电桥，且导电桥形成的至少两个距离值均相等，即在相邻两个排气孔13之间的多个导电桥等间距分布，以此保证相邻两个排气孔13之间的封装基板局部强度相一致，以平衡局部翘曲。
在一个实施例中，排气孔13包括第一排气孔、第二排气孔以及第三排气孔，第一排气孔、第二排气孔以及第三排气孔依次设置，第一排气孔和第二排气孔之间具有多个导电 桥，第二排气孔与第三排气孔之间具有多个导电桥；其中，第一排气孔和第二排气孔之间的相邻导电桥具有的距离值不等于第二排气孔与第三排气孔之间的相邻导电桥具有的距离值，以此使得导电桥与排气孔的排布能够保证气体及时排出，避免出现内部空洞问题。
具体的，靠近封装胶入口位置处的导电桥可以相对较密，且排气孔13的数量也可以相对较多，而远离封装胶入口位置处的导电桥可以相对较疏，且排气孔13的数量也可以相对较少。或者，在某些实施例中，靠近封装胶入口位置处的排气孔13的数量也可以相对较少，但相邻排气孔13之间的导电桥可以排布的更密，以此降低封装胶的流速，从而到达及时排气的效果。总之，在封装胶流速相对较高的位置处可以设置有相对较多的排气孔13，在排气孔13的位置处如果封装胶流速依然较高，则可以进一步增加导电桥的密度。
在一个实施例中，如图1所示，本体10还包括锡球区域16，锡球区域16位于开口区域11的外侧，封装基板还包括导电层30，导电层30位于锡球区域16内，开口区域11位于本体10的中部区域，即开口区域11在本体10的外边缘内侧，不与本体10的外边缘相交。而导电层30环绕开口区域11设置，导电层30上形成有多个切除通孔，即导电层30的面积减小，切除通孔用于后续形成信号连接结构，如导电凸点等。
可选的，如图1所示，本体10的表面包括第一区域14和第二区域15，第一区域14和第二区域15沿开口区域11的长度方向依次分布，第一区域14和第二区域15内均包含有导电桥和导电层30，第一区域14内的导电桥和导电层30的面积之和与第二区域15内的导电桥和导电层30的面积之和的比率小于1.1，即第一区域14和第二区域15内导电材料面积基本一致，以此平衡封装基板的局部强度，改善封装基板的整体翘曲，避免出现局部翘曲较为严重的问题。
可选的，第二区域15内的导电桥和导电层30的面积之和与第一区域14内的导电桥和导电层30的面积之和的比率小于1.1。
在一个实施例中，结合图1所示，第一区域14的导电层30上设置有多个第一切除通孔141，而第二区域15的导电层30上设置有多个第二切除通孔151，导电层30的面积变小，且第一区域14和第二区域15内导电材料面积基本一致。
需要说明的是，第一切除通孔141和第二切除通孔151可以是任意形状的结构，图1中所示的形状并不用于限定切除通孔的形状，只是表示在导电层30上形成有通孔。
在一个实施例中，第一区域14内的导电桥的面积大于第二区域15内的导电桥的面积，第一区域14内的导电层30的面积小于第二区域15内的导电桥的面积。即第一区域14内的导电桥排布较密，而第一区域14内的导电层30则需要较疏，相应的，第二区域15内 的导电桥排布较疏，第二区域15内的导电层30则需要较密，以此平衡封装基板的局部强度，达到封装基板整体翘曲平衡。
可选的，第一区域14内的导电桥的面积小于第二区域15内的导电桥的面积，第一区域14内的导电层30的面积大于第二区域15内的导电桥的面积。
在一个实施例中，如图1所示，多个导电桥包括：第一导电桥21，第一导电桥21上设置有第一通孔211，可以降低导电桥的总体面积，以此降低本体10出现的翘曲问题，从结构上改善封装基板的使用性能。。
需要说明的是，本体10包括底部表面和顶部表面，底部表面和顶部表面相对设置，顶部表面可以用于与芯片相连接，底部表面上可以与外部导电凸点等部件相连接。
本实施例中，开口区域11位于底部表面上，底部表面的中间区域设置有开口区域11。
相应地，本体10的顶部表面也设置有顶部导电材料层，通过降低底部导电材料层的面积可以使得顶部导电材料层的面积和底部导电材料层的面积尽可能地接近，以此进一步降低本体10出现的翘曲问题。
在一个实施例中，导电桥以及导电层30可以是铜层、铝层或者钨层等。
在一个实施例中，第一通孔211为多个，多个第一通孔211间隔地设置在第一导电桥21上，即相邻的两个第一通孔211彼此不连通，从而能够保证第一导电桥21本身的结构强度，且能够进一步减少导电桥的面积。
在一些实施例中，多个第一通孔211可以在第一导电桥21上任意排布。
在一些实施例中，多个第一通孔211沿第一导电桥21的长度方向间隔设置，即在相邻的两个第一通孔211之间保留有第一导电桥21的连接部分，且此连接部分位于第一导电桥21的宽度方向上，一定程度上能够避免第一导电桥21由于第一通孔211的存在而使得强度降低过多的问题。
需要说明的是，当第一导电桥21为规则的矩形结构时，此时矩形结构的长边形成的方向为长度方向。而在第一导电桥21为不规则的结构时，例如有多个类似矩形结构的部分组成，此时第一导电桥21的长度方向可以理解为类似矩形结构的长度方向。
在一些实施例中，多个第一通孔211可以是结构完全相同的通孔，在某些实施例中，也不排除多个第一通孔211中的至少一个与其他的结构不同。
在一个实施例中，第一通孔211的孔壁包括弧面和平面中的至少之一，即第一通孔211的形状可以根据实际需求进行确定，保证第一导电桥21具有足够强度的基础上，可以尽量减小第一导电桥21的面积。
可选的，第一通孔211可以是矩形孔、三角形孔、圆孔、椭圆孔。
在一些实施例中，第一通孔211的孔壁包括弧面和平面组成的不规则孔。
在一些实施例中，第一通孔211可以是多边形孔，第一通孔211的孔壁的面可以大于4。
在一个实施例中，多个导电桥还包括：第二导电桥22；第三导电桥23，第一导电桥21、第二导电桥22以及第三导电桥23依次设置，且第一导电桥21和第二导电桥22之间的距离值不等于第二导电桥22与第三导电桥23之间的距离值。
在一个实施例中，如图1所示，第二导电桥22上设置有第二通孔221，即通过在第二通孔221的设置可以进一步减小导电桥的面积，以此降低本体10出现的翘曲问题。
在一个实施例中，第二通孔221为多个，多个第二通孔221间隔地设置在第二导电桥22上，即相邻的两个第二通孔221彼此不连通，从而能够保证第二导电桥22本身的结构强度，且能够进一步减少导电桥的面积。
在一些实施例中，多个第二通孔221可以在第二导电桥22上任意排布。
在一些实施例中，多个第二通孔221沿第二导电桥22的长度方向间隔设置，即在相邻的两个第二通孔221之间保留有第二导电桥22的连接部分，且此连接部分位于第二导电桥22的宽度方向上，一定程度上能够避免第二导电桥22由于第二通孔221的存在而使得强度降低过多的问题。
需要说明的是，当第二导电桥22为规则的矩形结构时，此时矩形结构的长边形成的方向为长度方向。而在第二导电桥22为不规则的结构时，例如有多个类似矩形结构的部分组成，此时第二导电桥22的长度方向可以理解为类似矩形结构的长度方向。
在一些实施例中，多个第二通孔221可以是结构完全相同的通孔，在某些实施例中，也不排除多个第二通孔221中的至少一个与其他的结构不同。
在一个实施例中，第二通孔221的孔壁包括弧面和平面中的至少之一，即第二通孔221的形状可以根据实际需求进行确定，保证第二导电桥22具有足够强度的基础上，可以尽量减小第二导电桥22的面积。
可选的，第二通孔221可以是矩形孔、三角形孔、圆孔、椭圆孔。
在一些实施例中，第二通孔221的孔壁包括弧面和平面组成的不规则孔。
在一些实施例中，第二通孔221可以是多边形孔，第二通孔221的孔壁的面可以大于4。
在一个实施例中，第一通孔211和第二通孔221的形状可以完全相一致。在某些实施 例中，第一通孔211和第二通孔221的形状也可以不相同，此处不作限定。
在一个实施例中，如图1所示，开口区域11可以是一个矩形区域，此时第一导电桥21、第二导电桥22以及第三导电桥23可以沿开口区域11的长度方向间隔设置。
在一个实施例中，如图1所示，第三导电桥23上设置有第三通孔231，即通过在第三通孔231的设置可以进一步减小导电桥的面积，以此降低本体10出现的翘曲问题。
在一个实施例中，第三通孔231为多个，多个第三通孔231间隔地设置在第三导电桥23上，即相邻的两个第三通孔231彼此不连通，从而能够保证第三导电桥23本身的结构强度，且能够进一步减少导电桥的面积。
在一些实施例中，多个第三通孔231可以在第三导电桥23上任意排布。
在一些实施例中，多个第三通孔231沿第三导电桥23的长度方向间隔设置，即在相邻的两个第三通孔231之间保留有第三导电桥23的连接部分，且此连接部分位于第三导电桥23的宽度方向上，一定程度上能够避免第三导电桥23由于第三通孔231的存在而使得强度降低过多的问题。
需要说明的是，当第三导电桥23为规则的矩形结构时，此时矩形结构的长边形成的方向为长度方向。而在第三导电桥23为不规则的结构时，例如有多个类似矩形结构的部分组成，此时第三导电桥23的长度方向可以理解为类似矩形结构的长度方向。
在一些实施例中，多个第三通孔231可以是结构完全相同的通孔，在某些实施例中，也不排除多个第三通孔231中的至少一个与其他的结构不同。
在一个实施例中，第三通孔231的孔壁包括弧面和平面中的至少之一，即第三通孔231的形状可以根据实际需求进行确定，保证第三导电桥23具有足够强度的基础上，可以尽量减小第三导电桥23的面积。
可选的，第三通孔231可以是矩形孔、三角形孔、圆孔、椭圆孔。
在一些实施例中，第三通孔231的孔壁包括弧面和平面组成的不规则孔。
在一些实施例中，第三通孔231可以是多边形孔，第三通孔231的孔壁的面可以大于4。
在一些实施例中，第三导电桥23的结构形式可以与第一导电桥21和第二导电桥22中的一个相类似。
在一个实施例中，第一通孔211、第二通孔221和第三通孔231的形状可以完全相一致。在某些实施例中，第一通孔211、第二通孔221和第三通孔231中的至少两个的形状也可以不相同，此处不作限定。
在一个实施例中，导电桥还可以包括第四导电桥，第四导电桥也可以设置有类似上述的第一通孔211、第二通孔221或第三通孔231的第四通孔。
可选的，第四导电桥的结构形式可以完全不同于第一导电桥21、第二导电桥22以及第三导电桥23。或者，第四导电桥的结构形式可以与第一导电桥21、第二导电桥22以及第三导电桥23中的至少之一相一致，此处不作限定。
在一些实施例中，第一导电桥21、第二导电桥22、第三导电桥23以及第四导电桥中的任意之一可以是多个。
在一个实施例中，如图2至图5所示，第一导电桥21为矩形结构。
可选的，如图2所示，第一导电桥21为矩形结构，矩形结构内的第一通孔211为至少两个，第一通孔211的形状均为正方形。
可选的，如图3所示，第一导电桥21为矩形结构，矩形结构内的第一通孔211为至少两个，第一通孔211的形状均为长方形。
可选的，如图4所示，第一导电桥21为矩形结构，矩形结构内的第一通孔211为至少两个，第一通孔211的形状均为圆形。
可选的，如图5所示，第一导电桥21为矩形结构，矩形结构内的第一通孔211为至少两个，第一通孔211的形状均为菱形。
需要说明的是，第二导电桥22、第三导电桥23以及第四导电桥中的任意之一均可以是图2至图5中所示出的结构形式。
在一个实施例中，第一导电桥21包括：第一桥接段212，第一桥接段212的两端均连接本体10；第二桥接段213，第二桥接段213的两端均连接本体10，第一桥接段212和第二桥接段213间隔设置；第三桥接段214，第三桥接段214的两端分别连接第一桥接段212和第二桥接段213；其中，第一桥接段212、第二桥接段213以及第三桥接段214中的至少之一上设置有第一通孔211。
具体的，结合图6所示，第一导电桥21由第一桥接段212、第二桥接段213以及第三桥接段214组成，第一桥接段212和第二桥接段213实现了与本体10的连接，而第三桥接段214实现对第一桥接段212和第二桥接段213的连接，此结构形式的第一导电桥21强度较高，且由于第一通孔211的设置，第一导电桥21的面积也不会变大，以此减小本体10出现的翘曲问题。
第一桥接段212、第二桥接段213以及第三桥接段214均类似一个矩形结构，且形成了类似H形的结构。第一桥接段212、第二桥接段213以及第三桥接段214上均设置有至 少一个第一通孔211。
在一些实施例中，第一桥接段212、第二桥接段213以及第三桥接段214可以是一体成型结构。
在一些实施例中，第一桥接段212、第二桥接段213以及第三桥接段214也可以是由多个独立的结构相连接形成。
需要说明的是，第二导电桥22、第三导电桥23以及第四导电桥中的任意之一均可以是图6中所示出的结构形式。
在一个实施例中，第一导电桥21包括：第一桥接段212，第一桥接段212的一端连接本体10；第二桥接段213，第二桥接段213的一端连接本体10；第三桥接段214，第三桥接段214的一端连接第一桥接段212的另一端，第三桥接段214的一端连接第二桥接段213的另一端，第三桥接段214的另一端连接本体10；其中，第一桥接段212、第二桥接段213以及第三桥接段214中的至少之一上设置有第一通孔211。
具体的，结合图7所示，第一导电桥21由第一桥接段212、第二桥接段213以及第三桥接段214组成，第一桥接段212、第二桥接段213以及第三桥接段214的一端连接于同一点，而另一端分别连接于本体10上。本结构形式的第一导电桥21强度较高，且由于第一通孔211的设置，第一导电桥21的面积也不会变大，以此减小本体10出现的翘曲问题。
第一桥接段212、第二桥接段213以及第三桥接段214均类似一个矩形结构，且形成了类似Y形的结构。第一桥接段212、第二桥接段213以及第三桥接段214上均设置有至少一个第一通孔211。
在一些实施例中，第一桥接段212、第二桥接段213以及第三桥接段214也可以是由多个独立的结构相连接形成。
需要说明的是，第二导电桥22、第三导电桥23以及第四导电桥中的任意之一均可以是图7中所示出的结构形式。
需要说明的是，对于本体10上部表面的具体结构设计可以参考相关技术中的结构形式，当然，也不排除上部表面的具体结构设计形成与本实施例中的下部表面的具体结构设计形式相类似。
本公开的一个实施例还提供了一种半导体结构，包括上述的封装基板和芯片。
本公开一个实施例的半导体结构通过在封装基板的本体10上形成有开口区域11，且开口区域11内设置有多个间隔的导电桥，能够增强导电桥信号传输品质。且由于多个导电桥之间形成的多个距离值不都相等，即分布于开口区域11内的某些导电桥相对较密， 从而在对封装基板进行封装过程中，能够对封装树脂形成阻挡，以此减缓封装树脂的流动速率，保证开口区域11内的气体能够及时排出，以此避免出现内部空洞问题，从而改善半导体结构的性能。
在一个实施例中，芯片可以为一个或多个，芯片连接于本体10上。
本领域技术人员在考虑说明书及实践这里公开的发明后，将容易想到本公开的其它实施方案。本公开旨在涵盖本发明的任何变型、用途或者适应性变化，这些变型、用途或者适应性变化遵循本公开的一般性原理并包括本公开未公开的本技术领域中的公知常识或惯用技术手段。说明书和示例实施方式仅被视为示例性的，本公开的真正范围和精神由前面的权利要求指出。
应当理解的是，本公开并不局限于上面已经描述并在附图中示出的精确结构，并且可以在不脱离其范围进行各种修改和改变。本公开的范围仅由所附的权利要求来限制。

Claims (20)

  1. 一种封装基板，包括：
    本体，所述本体包括开口区域；
    多个导电桥，多个所述导电桥间隔地设置于所述开口区域，任意相邻所述导电桥具有相应的距离值；
    其中，至少两个所述距离值不相等。
  2. 根据权利要求1所述的封装基板，其中，相邻两个所述导电桥之间具有间隙，所述本体上设置有排气孔，所述排气孔与所述间隙相对设置。
  3. 根据权利要求2所述的封装基板，其中，所述排气孔为多个，多个所述排气孔间隔地设置在所述本体上，且分别对应一个所述间隙。
  4. 根据权利要求3所述的封装基板，其中，多个所述排气孔之间具有多个孔间距，所述孔间距为相邻两个所述排气孔之间的间距，至少两个所述孔间距不相等。
  5. 根据权利要求4所述的封装基板，其中，多个所述孔间距均不相同，多个所述孔间距沿所述开口区域的第一长度方向逐渐增加。
  6. 根据权利要求4所述的封装基板，其中，最大所述孔间距的相邻两个所述排气孔之间的相邻两个所述导电桥之间具有最大所述距离值。
  7. 根据权利要求3所述的封装基板，其中，相邻两个所述排气孔之间具有至少两个所述导电桥。
  8. 根据权利要求7所述的封装基板，其中，至少相邻两个所述排气孔之间具有至少三个所述导电桥，且所述导电桥形成的至少两个所述距离值均相等。
  9. 根据权利要求3所述的封装基板，其中，所述排气孔包括第一排气孔、第二排气孔以及第三排气孔，所述第一排气孔、所述第二排气孔以及第三排气孔依次设置，所述第一排气孔和所述第二排气孔之间具有多个所述导电桥，所述第二排气孔与所述第三排气孔之间具有多个所述导电桥；
    其中，所述第一排气孔和所述第二排气孔之间的相邻所述导电桥具有的所述距离值不等于所述第二排气孔与所述第三排气孔之间的相邻所述导电桥具有的所述距离值。
  10. 根据权利要求1所述的封装基板，其中，所述本体还包括锡球区域，所述锡球区域位于所述开口区域的外侧，所述封装基板还包括导电层，所述导电层位于所述锡球区域内；
    其中，所述本体的表面包括第一区域和第二区域，所述第一区域和所述第二区域沿所 述开口区域的长度方向依次分布，所述第一区域和所述第二区域内均包含有所述导电桥和所述导电层，所述第一区域内的所述导电桥和所述导电层的面积之和与所述第二区域内的所述导电桥和所述导电层的面积之和的比率小于1.1，或所述第二区域内的所述导电桥和所述导电层的面积之和与所述第一区域内的所述导电桥和所述导电层的面积之和的比率小于1.1。
  11. 根据权利要求10所述的封装基板，其中，所述第一区域内的所述导电桥的面积大于所述第二区域内的所述导电桥的面积，所述第一区域内的所述导电层的面积小于所述第二区域内的所述导电桥的面积。
  12. 根据权利要求1所述的封装基板，其中，多个所述导电桥包括：
    第一导电桥，所述第一导电桥上设置有第一通孔。
  13. 根据权利要求12所述的封装基板，其中，多个所述导电桥还包括：
    第二导电桥；
    第三导电桥，所述第一导电桥、所述第二导电桥以及所述第三导电桥依次设置，且所述第一导电桥和所述第二导电桥之间的所述距离值不等于所述第二导电桥与所述第三导电桥之间的所述距离值。
  14. 根据权利要求13所述的封装基板，其中，所述第二导电桥上设置有第二通孔，所述第三导电桥上设置有第三通孔。
  15. 根据权利要求14所述的封装基板，其中，所述第一通孔为多个；或所述第二通孔为多个；或，所述第三通孔为多个。
  16. 根据权利要求12所述的封装基板，其中，所述第一导电桥包括：
    第一桥接段，所述第一桥接段的两端均连接所述本体；
    第二桥接段，所述第二桥接段的两端均连接所述本体，所述第一桥接段和所述第二桥接段间隔设置；
    第三桥接段，所述第三桥接段的两端分别连接所述第一桥接段和所述第二桥接段；
    其中，所述第一桥接段、所述第二桥接段以及所述第三桥接段中的至少之一上设置有所述第一通孔。
  17. 根据权利要求12所述的封装基板，其中，所述第一导电桥包括：
    第一桥接段，所述第一桥接段的一端连接所述本体；
    第二桥接段，所述第二桥接段的一端连接所述本体；
    第三桥接段，所述第三桥接段的一端连接所述第一桥接段的另一端，所述第三桥接段 的一端连接所述第二桥接段的另一端，所述第三桥接段的另一端连接所述本体；
    其中，所述第一桥接段、所述第二桥接段以及所述第三桥接段中的至少之一上设置有所述第一通孔。
  18. 一种封装基板，包括：
    本体，所述本体包括开口区域；
    多个导电桥，多个所述导电桥包括第一导电桥、第二导电桥以及第三导电桥，所述第一导电桥、所述第二导电桥以及所述第三导电桥依次设置于所述开口区域；
    其中，所述第一导电桥和所述第二导电桥之间的距离值不等于所述第二导电桥与所述第三导电桥之间的距离值。
  19. 一种封装基板，包括：
    本体，所述本体包括开口区域，所述开口区域包括相对的第一侧壁和第二侧壁，封装胶能够由所述第一侧壁进入所述开口区域并流动至所述第二侧壁；
    多个导电桥，多个所述导电桥间隔地设置于所述开口区域；
    其中，多个所述导电桥中靠近所述第一侧壁的所述导电桥的排列密度大于靠近所述第二侧壁的所述导电桥的排列密度。
  20. 一种半导体结构，包括权利要求1至19中任一项所述的封装基板和芯片。
PCT/CN2021/109320 2021-02-05 2021-07-29 封装基板及具有其的半导体结构 WO2022166133A1 (zh)

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