WO2022092177A1 - 熱電変換モジュール - Google Patents

熱電変換モジュール Download PDF

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Publication number
WO2022092177A1
WO2022092177A1 PCT/JP2021/039750 JP2021039750W WO2022092177A1 WO 2022092177 A1 WO2022092177 A1 WO 2022092177A1 JP 2021039750 W JP2021039750 W JP 2021039750W WO 2022092177 A1 WO2022092177 A1 WO 2022092177A1
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WO
WIPO (PCT)
Prior art keywords
thermoelectric conversion
chip
conversion material
conversion module
resin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2021/039750
Other languages
English (en)
French (fr)
Japanese (ja)
Inventor
佑太 関
邦久 加藤
亘 森田
克彦 堀米
睦 升本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lintec Corp
Original Assignee
Lintec Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lintec Corp filed Critical Lintec Corp
Priority to CN202180073852.1A priority Critical patent/CN116368965A/zh
Priority to JP2022559215A priority patent/JP7778715B2/ja
Priority to US18/034,442 priority patent/US12408551B2/en
Publication of WO2022092177A1 publication Critical patent/WO2022092177A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
    • H10N10/17—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N11/00—Generators or motors not provided for elsewhere; Alleged perpetua mobilia obtained by electric or magnetic means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/856—Thermoelectric active materials comprising organic compositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/857—Thermoelectric active materials comprising compositions changing continuously or discontinuously inside the material

Definitions

  • the present invention relates to a thermoelectric conversion module.
  • thermoelectric conversion module having a thermoelectric effect such as the Zeebeck effect and the Pelche effect.
  • thermoelectric conversion module As the thermoelectric conversion module, the use of a so-called ⁇ -type thermoelectric conversion element is known.
  • the ⁇ -type thermoelectric conversion element is provided with a pair of electrodes separated from each other on the substrate, for example, the lower surface of the P-type thermoelectric element is provided on one of the electrodes, and the lower surface of the N-type thermoelectric element is provided on the other electrode.
  • the basic unit is a configuration in which the upper surfaces of both types of thermoelectric elements are connected to electrodes on opposite substrates, and usually, the basic units are connected in series in both substrates. Thermally, it is configured to be connected in parallel.
  • uni-leg type thermoelectric conversion element is known.
  • the uni-leg type thermoelectric conversion element is composed of only a P-type thermoelectric element or an N-type thermoelectric element in the above-mentioned configuration of the ⁇ -type thermoelectric conversion element, and electricity is applied between the upper and lower surfaces of the adjacent thermoelectric elements by using a conductive member or the like. It is configured to be connected in series.
  • the thermoelectric conversion modules have been made thinner, materials have been reduced, productivity has been improved, and reliability has been improved.
  • Patent Documents 1 and 2 disclose a thermoelectric conversion module using the above-mentioned ⁇ -type thermoelectric conversion element.
  • thermoelectric conversion module of Patent Document 1 is a metal capable of forming a PN junction pair by joining a pair of a P-type element made of a P-type thermoelectric material, an N-type element made of an N-type thermoelectric material, and these different types of elements one by one. It is composed of two substrates with electrodes, etc., and at least a base material that supports metal electrodes and elements is used, so any consideration has been given to making the thermoelectric conversion module thinner and reducing the number of constituent materials.
  • the thermoelectric conversion module of Patent Document 2 does not include a base material as a support in the final configuration, but a contact heat conduction layer is usually provided at a place where a substrate is arranged, and the contact heat conduction is provided.
  • the layer is made of aluminum nitride, silicon nitride, alumina, etc., which are the same types as the normally used base material, and also functions as a support. Not substantially.
  • the present invention has been made in view of such circumstances, and an object of the present invention is to provide a thin thermoelectric conversion module having no supporting base material.
  • thermoelectrics that are alternately separated between the chips of the P-type thermoelectric conversion material and the chips of the N-type thermoelectric conversion material, or are alternately separated from each other.
  • electrodes By arranging electrodes directly on both sides of a self-supporting integral body containing an insulator configured to fill the void between the chip of the conversion material or the chip of the N-type thermoelectric conversion material and the conductive chip.
  • a self-supporting thin thermoelectric conversion module that does not require a support base material having high thermal resistance as a conventional support can be obtained, and completed the present invention. That is, the present invention provides the following [1] to [12].
  • an integral body including an insulator configured to fill a gap composed of chips of a P-type thermoelectric conversion material and chips of an N-type thermoelectric conversion material that are alternately separated from each other.
  • a common first electrode to which one surface of the chip of the P-type thermoelectric conversion material and one surface of the chip of the N-type thermoelectric conversion material are joined, and the first electrode on the other surface of the integrated product.
  • the first electrode and the first electrode are provided with a common second electrode to which the other surface of the chip of the N-type thermoelectric conversion material and the other surface of the chip of the P-type thermoelectric conversion material are joined to face each other.
  • thermoelectric conversion module in which a chip of the P-type thermoelectric conversion material and a chip of the N-type thermoelectric conversion material are electrically connected in series by two electrodes and have no supporting base material on both sides of the thermoelectric conversion module.
  • An integral body containing an insulator configured to fill a void composed of alternating chips of the thermoelectric conversion material and a conductive chip, and one surface of the integral body of the thermoelectric conversion material.
  • thermoelectric conversion material chip A common second electrode for joining the other surface and the other surface of the conductive chip is provided, and the first electrode and the second electrode include the thermoelectric conversion material chip and the conductive chip.
  • the chip of the thermoelectric conversion material is selected from either a chip of a P-type thermoelectric conversion material or a chip of an N-type thermoelectric conversion material, and both sides of the thermoelectric conversion module have supporting substrates.
  • thermoelectric conversion module No, thermoelectric conversion module.
  • the first electrode and the second electrode are each independently formed of at least one film selected from the group consisting of a thin-film deposition film, a plating film, a conductive composition, and a metal foil.
  • the thermoelectric conversion module according to [2]. [6] The thermoelectric conversion module according to any one of [1] to [5] above, wherein the insulator is selected from an insulating resin and ceramics. [7] The thermoelectric conversion module according to the above [6], wherein the insulating resin is selected from a polyimide resin, a silicone resin, a rubber resin, an acrylic resin, an olefin resin, a maleimide resin, and an epoxy resin. ..
  • thermoelectric conversion module according to any one of [1] to [7] above, wherein the chip of the P-type thermoelectric conversion material and the chip of the N-type thermoelectric conversion material are made of a thermoelectric semiconductor composition.
  • thermoelectric conversion module according to the above [8] wherein the thermoelectric semiconductor composition contains a thermoelectric semiconductor material, a resin, and one or both of an ionic liquid and an inorganic ionic compound.
  • the material of the conductive chip is selected from copper, gold, silver, platinum, nickel, copper alloy, aluminum, and constantan.
  • thermoelectric conversion module according to the above [3], wherein a hard member is further provided on the adhesive layer on at least one surface of the thermoelectric conversion module.
  • hard member is a heat dissipation member.
  • thermoelectric conversion module of this invention It is sectional drawing which shows 1st Embodiment of the thermoelectric conversion module of this invention. It is sectional drawing which shows the 2nd Embodiment of the thermoelectric conversion module of this invention. It is sectional drawing which shows the 3rd Embodiment of the thermoelectric conversion module of this invention. It is sectional drawing which shows 4th Embodiment of the thermoelectric conversion module of this invention. It is sectional drawing which shows 5th Embodiment of the thermoelectric conversion module of this invention. It is sectional drawing which shows the 6th Embodiment of the thermoelectric conversion module of this invention.
  • thermoelectric conversion module of the present invention includes an integral body including an insulator configured to fill a gap composed of chips of a P-type thermoelectric conversion material and chips of an N-type thermoelectric conversion material that are alternately separated from each other, and the integrated product.
  • an insulator configured to fill a gap composed of chips of a P-type thermoelectric conversion material and chips of an N-type thermoelectric conversion material that are alternately separated from each other, and the integrated product.
  • a common first electrode to which one surface of the chip of the P-type thermoelectric conversion material and one surface of the chip of the N-type thermoelectric conversion material are joined, and on the other surface of the integrated product.
  • the first electrode is provided with a common second electrode for joining the other surface of the chip of the N-type thermoelectric conversion material and the other surface of the chip of the P-type thermoelectric conversion material facing the first electrode.
  • thermoelectric conversion module of the present invention predetermined electrodes are directly provided on both sides of a self-standing integrated body composed of a chip of a P-type thermoelectric conversion material, a chip of an N-type thermoelectric conversion material, and an insulator constituting the thermoelectric conversion module. By doing so, the support base material can be eliminated, and the thermoelectric conversion module can be made thinner.
  • thermoelectric conversion material is selected from either the chip of the P-type thermoelectric conversion material or the chip of the N-type thermoelectric conversion material, and the thermoelectric conversion module is selected. It is characterized in that it does not have a supporting base material on both sides of the above.
  • thermoelectric conversion module of the present invention a chip of a P-type thermoelectric conversion material or a chip of an N-type thermoelectric conversion material, a conductive chip, and an insulator constituting the thermoelectric conversion module are predetermined on both sides of a self-standing integrated body.
  • a resin such as polymethyl methacrylate or polystyrene, or a release agent such as a fluorine-based mold release agent or a silicone-based mold release agent can be used.
  • the chips of the thermoelectric conversion material formed on the base material such as glass can be easily peeled off from the glass or the like after the annealing treatment B.
  • the formation of the sacrificial layer is not particularly limited, and can be performed by a known method such as a flexographic printing method or a spin coating method.
  • the support is not particularly limited, and examples thereof include glass, silicon, ceramics, metal, and plastic. It is preferably selected from glass, plastic and silicon. When the annealing treatment or the like is performed at a high temperature, glass, silicon, ceramics, or metal is preferable.
  • the thickness of the support is preferably 100 to 1200 ⁇ m, more preferably 200 to 800 ⁇ m, still more preferably 400 to 700 ⁇ m from the viewpoint of process and dimensional stability. The support is peeled off after the integrated product is obtained.
  • the adhesive layer is provided on at least one surface of the thermoelectric conversion module. That is, by providing the adhesive layer on both or one of the first electrode and the second electrode including the gap between the adjacent first electrodes and the gap between the adjacent second electrodes.
  • the thermoelectric conversion module can be easily installed by adhering it to an adherend such as a heat source or an object to be cooled. Further, the weather resistance can be improved by including the gap between the first electrodes and the gap between the second electrodes.
  • the adhesive resin examples include rubber resins such as acrylic resins, urethane resins, and polyisobutylene resins, polyester resins, olefin resins, silicone resins, and polyvinyl ether resins.
  • the thickness of the adhesive layer is not particularly limited, but is preferably 1 to 50 ⁇ m, more preferably 2 to 30 ⁇ m.
  • plastic film examples include polyester films such as polyethylene terephthalate, polybutylene terephthalate, and polyethylene naphthalate, and polyolefin films such as polypropylene and polyethylene.
  • release agent examples include olefin-based resins, rubber-based elastomers (for example, butadiene-based resins, isoprene-based resins, etc.), long-chain alkyl-based resins, alkyd-based resins, fluorine-based resins, and silicone-based resins.
  • the heat radiating member examples include a metal material, a ceramic material, or a mixture of these materials and a resin. Among these, at least one selected from a metal material and a ceramic material is preferable.
  • Metallic materials include gold, silver, copper, nickel, tin, iron, chromium, platinum, palladium, rhodium, iridium, ruthenium, osmium, indium, zinc, molybdenum, manganese, titanium, aluminum and other single metals, stainless steel, and brass. Examples thereof include alloys containing two or more kinds of metals such as (brass) and the like.
  • a known physical treatment or chemical treatment mainly based on a photolithography method, or a combined use thereof, or the like is performed.
  • PVD Physical Vapor Deposition
  • CVD chemical vapor deposition
  • thermal CVD and atomic layer deposition (ALD) can be used to form electrodes that do not have a pattern.
  • Dry process such as vapor deposition method
  • various coating methods such as dip coating method, spin coating method, spray coating method, gravure coating method, die coating method, doctor blade method, wet process such as electrodeposition method, silver salt method .
  • solder may be used to bond the metal foil to a thermoelectric material or the like.
  • the electrodes used in the present invention are required to have high conductivity and high thermal conductivity from the viewpoint of maintaining thermoelectric performance, it is more preferable to use electrodes formed by a plating method or a vacuum film forming method. Since high conductivity and high thermal conductivity can be easily realized, a vacuum film forming method such as a vacuum vapor deposition method and a sputtering method, and an electrolytic plating method and an electroless plating method are preferable. Although it depends on the dimensions of the forming pattern and the requirement of dimensional accuracy, the pattern can be easily formed by interposing a hard mask such as a metal mask.
  • thermoelectric conversion module of the present invention does not require a base material as a support conventionally used, and the thermoelectric conversion module can be made thin.

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Measuring Temperature Or Quantity Of Heat (AREA)
PCT/JP2021/039750 2020-10-30 2021-10-28 熱電変換モジュール Ceased WO2022092177A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN202180073852.1A CN116368965A (zh) 2020-10-30 2021-10-28 热电转换组件
JP2022559215A JP7778715B2 (ja) 2020-10-30 2021-10-28 熱電変換モジュール
US18/034,442 US12408551B2 (en) 2020-10-30 2021-10-28 Thermoelectric conversion module

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP2020-182610 2020-10-30
JP2020182614 2020-10-30
JP2020182610 2020-10-30
JP2020-182614 2020-10-30
JP2021-062199 2021-03-31
JP2021062199 2021-03-31

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WO2022092177A1 true WO2022092177A1 (ja) 2022-05-05

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PCT/JP2021/039750 Ceased WO2022092177A1 (ja) 2020-10-30 2021-10-28 熱電変換モジュール

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US (1) US12408551B2 (https=)
JP (1) JP7778715B2 (https=)
CN (1) CN116368965A (https=)
TW (1) TWI905300B (https=)
WO (1) WO2022092177A1 (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115219021A (zh) * 2022-07-14 2022-10-21 上海交通大学 一种芯片级超薄光功率计探头
WO2024048473A1 (ja) * 2022-08-31 2024-03-07 パナソニックＩｐマネジメント株式会社 熱電変換素子及び熱電変換素子の製造方法

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CN120432451B (zh) * 2025-07-07 2025-09-05 上海新微技术研发中心有限公司 一种集成电路芯片的无源散热器件

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WO2024048473A1 (ja) * 2022-08-31 2024-03-07 パナソニックＩｐマネジメント株式会社 熱電変換素子及び熱電変換素子の製造方法

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TW202236702A (zh) 2022-09-16
JPWO2022092177A1 (https=) 2022-05-05
US20230380288A1 (en) 2023-11-23
JP7778715B2 (ja) 2025-12-02
US12408551B2 (en) 2025-09-02
TWI905300B (zh) 2025-11-21
CN116368965A (zh) 2023-06-30

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