WO2022019023A1 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
WO2022019023A1
WO2022019023A1 PCT/JP2021/023325 JP2021023325W WO2022019023A1 WO 2022019023 A1 WO2022019023 A1 WO 2022019023A1 JP 2021023325 W JP2021023325 W JP 2021023325W WO 2022019023 A1 WO2022019023 A1 WO 2022019023A1
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WO
WIPO (PCT)
Prior art keywords
electrode
joint
conductive member
semiconductor device
die pad
Prior art date
Application number
PCT/JP2021/023325
Other languages
English (en)
French (fr)
Japanese (ja)
Inventor
沢水 神田
Original Assignee
ローム株式会社
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Publication date
Application filed by ローム株式会社 filed Critical ローム株式会社
Priority to CN202180060395.2A priority Critical patent/CN116134614A/zh
Priority to JP2022538640A priority patent/JPWO2022019023A1/ja
Priority to DE112021002880.4T priority patent/DE112021002880T5/de
Priority to DE212021000207.2U priority patent/DE212021000207U1/de
Priority to US18/004,860 priority patent/US20230352376A1/en
Publication of WO2022019023A1 publication Critical patent/WO2022019023A1/ja

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Definitions

  • the present disclosure relates to a semiconductor device including a semiconductor element.
  • Patent Document 1 discloses an example of a semiconductor device including a MOSFET.
  • the semiconductor device includes a drain terminal to which a power supply voltage is applied, a gate terminal for inputting an electric signal, and a source terminal through which a converted current flows.
  • the MOSFET has a drain electrode conducting to the drain terminal, a gate electrode conducting to the gate terminal, and a source electrode conducting to the source terminal.
  • the drain electrode of the MOSFET is electrically bonded to the die pad (connected to the drain terminal) via solder (first conductive bonding material).
  • the source electrode of the MOSFET is bonded to a conductive member (metal clip) via solder (second conductive bonding material).
  • a source terminal is also joined to this conductive member.
  • thermal stress tends to concentrate at the interface between the source electrode and the second conductive bonding material in use. This is because the heat generated from the MOSFET is conducted to the second conductive bonding material via the source electrode. The heat generated from the MOSFET is also conducted to the first conductive bonding material via the drain electrode.
  • the concentration of thermal stress becomes remarkable between the source electrode and the second conductive bonding material.
  • cracks may occur in both the source electrode and the second conductive bonding material. Therefore, it is desired to take measures to alleviate the thermal stress acting on the MOSFET by reducing the concentration of thermal stress.
  • one of the problems of the present disclosure is to provide a semiconductor device capable of relaxing the thermal stress acting on the semiconductor element while dealing with a larger current.
  • the semiconductor device provided by the present disclosure has a first die pad having a first main surface facing in the thickness direction; an electrode provided on the side facing the first main surface in the thickness direction, and said first.
  • a semiconductor element bonded to a main surface; a conductive member electrically bonded to the electrode; and a first bonding layer electrically bonded to the conductive member and the electrode;
  • the conductive member includes a main body portion, a first joint portion electrically bonded to the electrode by the first joint layer, a first connecting portion connecting the main body portion and the first joint portion, and the first joint portion. It is located away from the connecting portion and has a tip portion connected to the first joint portion.
  • the tip portion When viewed along the in-plane direction of the first main surface, the tip portion is inclined toward the electrode as the distance from the first joint portion increases.
  • the electrode When viewed along the thickness direction, the electrode includes an expansion region protruding from the conductive member on the side opposite to the first joint portion with respect to the tip portion in the in-plane direction.
  • the semiconductor device can relieve the thermal stress acting on the semiconductor element while dealing with a larger current.
  • FIG. 3 is a cross-sectional view taken along the line VII-VII of FIG.
  • FIG. 3 is a cross-sectional view taken along the line VIII-VIII of FIG.
  • FIG. 3 is a cross-sectional view taken along the line IX-IX of FIG.
  • FIG. 3 is a cross-sectional view taken along the line XX of FIG.
  • FIG. 3 is a cross-sectional view taken along the line XI-XI of FIG. It is a top view of the 1st conductive member of the semiconductor device shown in FIG. It is a top view of the 2nd conductive member of the semiconductor device shown in FIG. It is a partially enlarged view of FIG.
  • FIG. 7 is a partially enlarged view of FIG. 7.
  • FIG. 7 is a partially enlarged view of FIG. 7.
  • FIG. is a partially enlarged view of FIG.
  • It is a top view of the semiconductor device which concerns on 2nd Embodiment of this disclosure, and is transmitted through a sealing resin.
  • It is a partially enlarged view of FIG. It is sectional drawing which follows the XXI-XXI line of FIG.
  • the semiconductor device A10 includes a first die pad 11, a second die pad 12, a first input terminal 13, an output terminal 14, a second input terminal 15, a pair of semiconductor elements 21, a die bonding layer 23, a first bonding layer 24, and a second. It includes a bonding layer 25, a first conductive member 30A, a second conductive member 30B, and a sealing resin 50. Further, the semiconductor device A10 includes a first gate terminal 161, a second gate terminal 162, a first detection terminal 171 and a second detection terminal 172, a pair of protection elements 22, a third junction layer 26, a pair of gate wires 41, and a pair. The detection wire 42 is provided. In FIG. 3, for convenience of understanding, the sealing resin 50 is transmitted, and the sealing resin 50 is shown by an imaginary line (dashed-dotted line). The IX-IX line and the XX line are indicated by alternate long and short dash lines, respectively.
  • the thickness direction of the first die pad 11 is referred to as "thickness direction z".
  • One direction orthogonal to the thickness direction z is called “first direction x”.
  • the direction orthogonal to both the thickness direction z and the first direction x is referred to as a "second direction y”.
  • the "in-plane direction" of the first main surface 111 of the first die pad 11 is a direction parallel to the first main surface, and in the present disclosure, either the first direction x or the second direction y depending on the situation. Point to.
  • the "in-plane direction” is the first direction x
  • the "in-plane direction” is the second direction y.
  • the semiconductor device A10 converts the DC power supply voltage applied to the first input terminal 13 and the second input terminal 15 into AC power by a pair of semiconductor elements 21.
  • the converted AC power is input from the output terminal 14 to a power supply target such as a motor.
  • the semiconductor device A10 is used in a power conversion circuit such as an inverter.
  • the first die pad 11 protects one of the pair of semiconductor elements 21 and the semiconductor element 21 (first switching element 21A) and the pair of protection elements 22. It is a conductive member on which the element 22 (first diode 22A) is mounted.
  • the first die pad 11 includes a second die pad 12, a first input terminal 13, an output terminal 14, a second input terminal 15, a first gate terminal 161 and a second gate terminal 162, a first detection terminal 171 and a second detection terminal 172. At the same time, it is composed of the same lead frame.
  • the lead frame is copper (Cu) or a copper alloy.
  • the first die pad 11 contains copper (ie, each of the above members contains copper).
  • the first die pad 11 has a first main surface 111 and a first back surface 112.
  • the first main surface 111 faces the thickness direction z.
  • a first switching element 21A and a first diode 22A are mounted on the first main surface 111.
  • another member B is mounted (arranged, provided, etc.) on a certain member A, the case where the member A and the member B are in direct contact with each other.
  • At least one other member may be interposed between the member A and the member B.
  • the first back surface 112 faces the side opposite to the first main surface 111 in the thickness direction z.
  • the first back surface 112 is, for example, tin (Sn) plated. As shown in FIGS. 7 and 8, the thickness T1 of the first die pad 11 is larger than the maximum thickness t max of the first conductive member 30A.
  • the second die pad 12 protects the other semiconductor element 21 (second switching element 21B) of the pair of semiconductor elements 21 and one of the pair of protection elements 22. It is a conductive member on which the element 22 (second diode 22B) is mounted.
  • the second die pad 12 is located away from the first die pad 11 in the in-plane direction (second direction y).
  • the second die pad 12 has a second main surface 121 and a second back surface 122.
  • the second main surface 121 faces the same side as the first main surface 111 in the thickness direction z.
  • a second switching element 21B and a second diode 22B are mounted on the second main surface 121.
  • the second back surface 122 faces the side opposite to the second back surface 122 in the thickness direction z.
  • the second back surface 122 is, for example, tin-plated.
  • the thickness T2 of the second die pad 12 is larger than the maximum thickness t max of the first conductive member 30A.
  • the pair of semiconductor elements 21 includes a first switching element 21A and a second switching element 21B.
  • the first switching element 21A is joined to the first main surface 111 of the first die pad 11.
  • the second switching element 21B is joined to the second main surface 121 of the second die pad 12.
  • the pair of semiconductor elements 21 is, for example, a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor).
  • MOSFET Metal-Oxide-Semiconductor Field-Effect Transistor
  • the pair of semiconductor elements 21 are n-channel type MOSFETs having a vertical structure.
  • Each semiconductor element 21 includes a compound semiconductor substrate.
  • the composition of the compound semiconductor substrate contains silicon carbide (SiC).
  • the composition of the compound semiconductor substrate may include gallium nitride (GaN).
  • each semiconductor element 21 has a first electrode 211, a second electrode 212, and a third electrode 213.
  • the first electrode 211 faces either the first main surface 111 of the first die pad 11 or the second main surface 121 of the second die pad 12 (via the die bonding layer 23). It is provided. A voltage corresponding to the electric power to be converted is applied to the first electrode 211.
  • the first electrode 211 corresponds to a drain electrode.
  • the second electrode 212 is provided on the side opposite to the first electrode 211 in the thickness direction z. That is, the second electrode 212 is provided on the side of the first die pad 11 facing the same direction as the first main surface 111. A current corresponding to the electric power converted by any one of the pair of semiconductor elements 21 flows through the second electrode 212.
  • the second electrode 212 corresponds to the source electrode.
  • the second electrode 212 includes a plurality of metal plating layers.
  • the second electrode 212 includes a nickel (Ni) plating layer and a gold (Au) plating layer laminated on the nickel plating layer.
  • the second electrode 212 may include a nickel plating layer, a palladium (Pd) plating layer laminated on the nickel plating layer, and a gold plating layer laminated on the palladium plating layer.
  • the third electrode 213 is provided on the same side as the second electrode 212 in the thickness direction z, and is located away from the second electrode 212.
  • a gate voltage for driving any of the pair of semiconductor elements 21 is applied to the third electrode 213.
  • the third electrode 213 corresponds to a gate electrode. In each semiconductor element 21, the current corresponding to the voltage applied to the first electrode 211 is converted based on the gate voltage.
  • the area of the third electrode 213 is smaller than the area of the second electrode 212 when viewed along the thickness direction z.
  • the pair of protection elements 22 includes the first diode 22A and the second diode 22B.
  • the first diode 22A is bonded to the first main surface 111 of the first die pad 11.
  • the second diode 22B is bonded to the second main surface 121 of the second die pad 12.
  • Each protection element 22 is, for example, a Schottky barrier diode.
  • the first diode 22A is connected in parallel to the first switching element 21A.
  • the second diode 22B is connected in parallel to the second switching element 21B.
  • Each protection element 22 is a so-called freewheeling diode. That is, when a reverse bias is applied to each semiconductor element 21, the current flows not in the semiconductor element 21 but in the protection element 22 connected in parallel to the semiconductor element 21.
  • each protective element 22 has a top electrode 221 and a bottom electrode 222.
  • the upper surface electrode 221 is provided on the side facing the first main surface 111 of the first die pad 11 in the thickness direction z.
  • the top electrode 221 is conductive to the second electrode 212 of the semiconductor element 21 connected in parallel to the protection element 22.
  • the top electrode 221 corresponds to the anode electrode.
  • the bottom electrode 222 is provided on the side opposite to the top electrode 221 in the thickness direction z.
  • the bottom electrode 222 is conductive to the first electrode 211 of the semiconductor element 21 connected in parallel to the protection element 22.
  • the bottom electrode 222 corresponds to a cathode electrode.
  • the die bonding layer 23 includes a first main surface 111 of the first die pad 11 and a second main surface 121 of the second die pad 12, and a pair of semiconductor elements 21. It includes a portion located between the one electrode 211 and the bottom electrode 222 of the pair of protective elements 22.
  • the die bonding layer 23 is made of a conductive material.
  • the die bonding layer 23 is, for example, lead-free solder. In addition, the die bonding layer 23 may be lead solder.
  • the die bonding layer 23 electrically bonds the first electrode 211 of the first switching element 21A, the lower surface electrode 222 of the first diode 22A, and the first main surface 111.
  • the first electrode 211 of the first switching element 21A and the lower surface electrode 222 of the first diode 22A are conductive to the first die pad 11.
  • the die bonding layer 23 electrically bonds the first electrode 211 of the second switching element 21B, the lower surface electrode 222 of the second diode 22B, and the second main surface 121.
  • the first electrode 211 of the second switching element 21B and the lower surface electrode 222 of the second diode 22B are conductive to the second die pad 12.
  • the first input terminal 13 includes a portion extending along the first direction x and is connected to the first die pad 11. Therefore, the first input terminal 13 is electrically connected to the first die pad 11.
  • the first input terminal 13 is a P terminal (positive electrode) to which a DC power supply voltage to be converted into power is applied.
  • the first input terminal 13 has a covering portion 13A and an exposed portion 13B.
  • the covering portion 13A is connected to the first die pad 11 and is covered with the sealing resin 50.
  • the covering portion 13A is bent when viewed along the second direction y.
  • the exposed portion 13B is connected to the covering portion 13A and is exposed from the sealing resin 50.
  • the exposed portion 13B extends toward the side away from the first die pad 11 in the first direction x.
  • the surface of the exposed portion 13B is, for example, tin-plated.
  • the output terminal 14 includes a portion extending along the first direction x and is connected to the second die pad 12. Therefore, the output terminal 14 is electrically connected to the second die pad 12.
  • the AC power converted by each semiconductor element 21 is output from the output terminal 14.
  • the output terminal 14 has a covering portion 14A and an exposed portion 14B.
  • the covering portion 14A is connected to the second die pad 12 and is covered with the sealing resin 50 (see FIG. 11).
  • the covering portion 14A is bent in the same manner as the covering portion 13A of the first input terminal 13.
  • the exposed portion 14B is connected to the covering portion 14A and is exposed from the sealing resin 50.
  • the exposed portion 14B extends away from the second die pad 12 in the first direction x.
  • the surface of the exposed portion 14B is, for example, tin-plated.
  • the second input terminal 15 is located away from both the first die pad 11 and the second die pad 12 in the first direction x, and the first input terminal 13 and the output terminal are located in the second direction y. It is located between 14 and 14.
  • the second input terminal 15 extends along the first direction x.
  • the second input terminal 15 is conductive to the second electrode 212 of the second switching element 21B and the upper surface electrode 221 of the second diode 22B.
  • the second input terminal 15 is an N terminal (negative electrode) to which a power supply voltage (corresponding to a direct current to be converted into power) is applied.
  • the second input terminal 15 has a covering portion 15A and an exposed portion 15B. As shown in FIG. 10, the covering portion 15A is covered with the sealing resin 50. As shown in FIGS.
  • the exposed portion 15B is connected to the covering portion 15A and is exposed from the sealing resin 50.
  • the exposed portion 15B extends away from both the first die pad 11 and the second die pad 12 in the first direction x.
  • the surface of the exposed portion 15B is, for example, tin-plated.
  • the first gate terminal 161 is located away from the first die pad 11 in the first direction x and is located at one end of the second direction y.
  • the second gate terminal 162 is located away from the second die pad 12 in the first direction x and is located at the other end of the second direction y.
  • the first gate terminal 161 is conductive to the third electrode 213 of the first switching element 21A.
  • a gate voltage for driving the first switching element 21A is applied to the first gate terminal 161.
  • the second gate terminal 162 is conductive to the third electrode 213 of the second switching element 21B.
  • a gate voltage for driving the second switching element 21B is applied to the second gate terminal 162.
  • the first gate terminal 161 has a covering portion 161A and an exposed portion 161B.
  • the covering portion 161A is covered with the sealing resin 50.
  • the exposed portion 161B is connected to the covering portion 161A and is exposed from the sealing resin 50.
  • the exposed portion 161B extends in the first direction x toward the side away from the first die pad 11.
  • the surface of the exposed portion 161B is, for example, tin-plated.
  • the second gate terminal 162 has a covering portion 162A and an exposed portion 162B.
  • the covering portion 162A is covered with the sealing resin 50.
  • the exposed portion 162B is connected to the covering portion 162A and is exposed from the sealing resin 50.
  • the exposed portion 162B extends in the first direction x toward the side away from the second die pad 12.
  • the surface of the exposed portion 162B is, for example, tin-plated.
  • the first detection terminal 171 is located away from the first die pad 11 in the first direction x, and is located between the first input terminal 13 and the first gate terminal 161 in the second direction y.
  • the second detection terminal 172 is located away from the second die pad 12 in the first direction x and is located between the output terminal 14 and the second gate terminal 162 in the second direction y. ..
  • the first detection terminal 171 is conductive to the second electrode 212 of the first switching element 21A. A voltage corresponding to the current flowing through the second electrode 212 of the first switching element 21A is applied to the first detection terminal 171.
  • the second detection terminal 172 is conductive to the second electrode 212 of the second switching element 21B. A voltage corresponding to the current flowing through the second electrode 212 of the second switching element 21B is applied to the second detection terminal 172.
  • the first detection terminal 171 has a covering portion 171A and an exposed portion 171B.
  • the covering portion 171A is covered with the sealing resin 50.
  • the exposed portion 171B is connected to the covering portion 171A and is exposed from the sealing resin 50.
  • the exposed portion 171B extends in the first direction x toward the side away from the first die pad 11.
  • the surface of the exposed portion 171B is, for example, tin-plated.
  • the second detection terminal 172 has a covering portion 172A and an exposed portion 172B.
  • the covering portion 172A is covered with the sealing resin 50.
  • the exposed portion 172B is connected to the covering portion 172A and is exposed from the sealing resin 50.
  • the exposed portion 172B extends in the first direction x toward the side away from the second die pad 12.
  • the surface of the exposed portion 172B is, for example, tin-plated.
  • the heights h of the exposed portion 13B of the first input terminal 13, the exposed portion 14B of the output terminal 14, and the exposed portion 15B of the second input terminal 15 are equal. Further, the thicknesses of these exposed portions are also equal to each other. Therefore, when viewed along the second direction y, at least a part (exposed portion 15B) of the second input terminal 15 overlaps each of the first input terminal 13 and the output terminal 14 (see FIG. 6).
  • the first conductive member 30A is electrically connected to the second electrode 212 of the first switching element 21A, the upper surface electrode 221 of the first diode 22A, and the second main surface 121 of the second die pad 12. It is joined to. As a result, the second electrode 212 of the first switching element 21A and the upper surface electrode 221 of the first diode 22A are conducting to the second die pad 12 in a state where they are mutually conductive. As shown in FIG. 3, the second conductive member 30B is joined to the second electrode 212 of the second switching element 21B, the upper surface electrode 221 of the second diode 22B, and the covering portion 15A of the second input terminal 15. There is. As a result, the second electrode 212 of the second switching element 21B and the upper surface electrode 221 of the second diode 22B are conducting to the second input terminal 15 in a state where they are mutually conducted.
  • each composition of the first conductive member 30A and the second conductive member 30B contains copper.
  • each of the first conductive member 30A and the second conductive member 30B is a metal clip.
  • each of the first conductive member 30A and the second conductive member 30B has a main body portion 31, a first joint portion 32, a first connecting portion 33, a tip portion 34, and a second joint portion 35.
  • the main body portion 31 forms the main portion of each of the first conductive member 30A and the second conductive member 30B. As shown in FIGS. 7, 8 and 10, the main body 31 is parallel to the first main surface 111 of the first die pad 11 and the second main surface 121 of the second die pad 12.
  • the main body portion 31 of the second conductive member 30B is located farther from both the first main surface 111 and the second main surface 121 than the main body portion 31 of the first conductive member 30A, and is the second of the first conductive member 30A. It straddles the joint portion 35.
  • the first bonding portion 32 is electrically bonded to the second electrode 212 of any one of the pair of semiconductor elements 21.
  • the first bonding portion 32 of the first conductive member 30A is electrically bonded to the second electrode 212 of the first switching element 21A.
  • the first bonding portion 32 of the second conductive member 30B is electrically bonded to the second electrode 212 of the second switching element 21B.
  • the first junction 32 is parallel to the second electrode 212 of any of the pair of semiconductor elements 21.
  • the first joint portion 32 has a first joint surface 321 and a first opening 322.
  • the first junction surface 321 faces the second electrode 212 of any one of the pair of semiconductor elements 21.
  • the first opening 322 penetrates the first joint portion 32 in the thickness direction z. As shown in FIG. 14, the first opening 322 has a circular shape when viewed along the thickness direction z. The area (opening area) of the first opening 322 is 0.25 mm 2 or more.
  • the first connecting portion 33 connects the main body portion 31 and the first joining portion 32.
  • the first connecting portion 33 when viewed along the in-plane direction (first direction x), the first connecting portion 33 is the first main of the first die pad 11 as it goes from the first joint portion 32 toward the main body portion 31. It is inclined away from either the surface 111 or the second main surface 121 of the second die pad 12.
  • the first connecting portion 33 has a first inclined surface 331 and a boundary 332.
  • the first inclined surface 331 is connected to the first joint surface 321 of the first joint portion 32 and is inclined with respect to the first joint surface 321.
  • the magnitude of the inclination angle ⁇ 1 formed by the first inclined surface 331 with respect to the first joint surface 321 is 30 ° or more and 60 ° or less.
  • the boundary 332 refers to the intersection line between the first joint surface 321 and the first inclined surface 331. As shown in FIG. 14, when viewed along the thickness direction z, the boundary 332 is located inward of any peripheral edge of the pair of semiconductor elements 21.
  • the shortest distance d1 between the peripheral edge and the boundary 332 is 0.2 mm or more and 0.5 mm or less.
  • the tip portion 34 is located away from the first connecting portion 33 and is connected to the first joining portion 32.
  • the tip portion 34 In the in-plane direction (second direction y), the tip portion 34 is located on the side opposite to the first connecting portion 33 with respect to the first joining portion 32.
  • the tip portion 34 when viewed along the in-plane direction (first direction x), the tip portion 34 is moved away from the first junction portion 32 from the second electrode 212 of either of the pair of semiconductor elements 21. It is tilted away.
  • the second electrode 212 of the first switching element 21A has a first conductive member 30A on the side opposite to the first joint portion 32 with respect to the tip portion 34 in the in-plane direction (second direction y).
  • the second electrode 212 of the second switching element 21B also includes an expansion region 212A that also protrudes from the second conductive member 30B.
  • the minimum dimension d2 of the expansion region 212A is 0.1 mm or more and 0.2 mm or less.
  • the tip portion 34 has a warped surface 341.
  • the warped surface 341 is connected to the first joint surface 321 of the first joint portion 32 and is inclined with respect to the first joint surface 321.
  • the warped surface 341 has an inclination angle ⁇ 2 with respect to the first joint surface 321.
  • the total area of the first joint portion 32 and the tip portion 34 with respect to the area of the second electrode 212 of any one of the pair of semiconductor elements 21 when viewed along the thickness direction z (however, the opening area of the first opening 322).
  • the ratio of) is 50% or more and 90% or less.
  • the second joining portion 35 is electrically joined to either the second main surface 121 of the second die pad 12 or the covering portion 15A of the second input terminal 15. ing.
  • the second joint portion 35 of the first conductive member 30A is electrically joined to the second main surface 121 and is parallel to the second main surface 121.
  • the second joint portion 35 of the first conductive member 30A includes two regions located apart from each other in the first direction x.
  • the second joint portion 35 of the second conductive member 30B is electrically joined to the covering portion 15A and is parallel to the covering portion 15A.
  • the second joint portion 35 has a second joint surface 351 and a second opening 352.
  • the second joint surface 351 faces either the second main surface 121 or the covering portion 15A.
  • the second opening 352 penetrates the second joint portion 35 in the thickness direction z. As shown in FIGS. 12 and 13, the second opening 352 has a circular shape when viewed along the thickness direction z.
  • the opening area of the second opening 352 is 0.25 mm 2 or more.
  • the second connecting portion 36 connects the main body portion 31 and the second joint portion 35.
  • the second connecting portion 36 of the first conductive member 30A is viewed along the in-plane direction (first direction x), and the direction from the second joint portion 35 toward the main body portion 31 is the second main surface of the second die pad 12. It is tilted away from 121.
  • the second connecting portion 36 of the second conductive member 30B is viewed along the in-plane direction (second direction y), and as it goes from the second joint portion 35 toward the main body portion 31, the covering portion 15A of the second input terminal 15 It is tilted away from.
  • the second connecting portion 36 has a second inclined surface 361.
  • the second inclined surface 361 is connected to the second joint surface 351 of the second joint portion 35 and is inclined with respect to the second joint surface 351.
  • the third bonding portion 37 is electrically bonded to the upper surface electrode 221 of any of the pair of protective elements 22.
  • the third joint portion 37 of the first conductive member 30A is electrically bonded to the upper surface electrode 221 of the first diode 22A.
  • the third joint portion 37 of the second conductive member 30B is electrically bonded to the upper surface electrode 221 of the second diode 22B.
  • the third junction 37 is parallel to the top electrode 221 of any of the pair of protective elements 22.
  • the third joint portion 37 is connected to the first connecting portion 33.
  • the third joint portion 37 has a third joint surface 371 and a third opening 372.
  • the third joint surface 371 faces the upper surface electrode 221 of any one of the pair of protection elements 22.
  • the third joint surface 371 is connected to the first inclined surface 331 of the first connecting portion 33.
  • the first inclined surface 331 has an inclination angle ⁇ 1 with respect to the third joint surface 371 when viewed along the in-plane direction (first direction x).
  • the third opening 372 penetrates the third joint portion 37 in the thickness direction z.
  • the third opening 372 has a circular shape when viewed along the thickness direction z.
  • the opening area of the third opening 372 is 0.25 mm 2 or more.
  • the tip portion 38 is located away from the first connecting portion 33 and is connected to the third joining portion 37.
  • the tip portion 38 In the in-plane direction (second direction y), the tip portion 38 is located on the side opposite to the first connecting portion 33 with respect to the third joint portion 37.
  • the tip portion 38 when viewed along the in-plane direction (first direction x), the tip portion 38 is separated from the upper surface electrode 221 of any of the pair of protective elements 22 as the distance from the third joint portion 37 increases. It is tilted in the direction. As shown in FIG.
  • the upper surface electrode 221 of the first diode 22A protrudes from the first conductive member 30A on the side opposite to the third joint portion 37 with respect to the tip portion 38 in the in-plane direction (second direction y). Includes extended region 221A.
  • the top electrode 221 of the second diode 22B also includes an expansion region 221A that also protrudes from the second conductive member 30B.
  • the tip portion 38 has a warped surface 381.
  • the warped surface 381 is connected to the third joint surface 371 of the third joint portion 37 and is inclined with respect to the third joint surface 371.
  • the warped surface 381 has an inclination angle ⁇ 3 with respect to the third joint surface 371.
  • the first bonding layer 24 has a second electrode 212 of each of the pair of semiconductor elements 21 and a first bonding portion of either the first conductive member 30A or the second conductive member 30B. Includes a portion located between 32 and.
  • the first bonding layer 24 has conductivity.
  • the first bonding layer 24 is, for example, lead-free solder. In addition, the first bonding layer 24 may be lead solder.
  • the first bonding layer 24 electrically bonds each of the first conductive member 30A and the second conductive member 30B to the second electrode 212 of any one of the pair of semiconductor elements 21. Therefore, the first bonding portion 32 of the first conductive member 30A is electrically bonded to the second electrode 212 of the first switching element 21A by the first bonding layer 24.
  • the first bonding portion 32 of the second conductive member 30B is electrically bonded to the second electrode 212 of the second switching element 21B by the first bonding layer 24.
  • the first joint layer 24 is in contact with the first joint surface 321 of the first joint portion 32 of each of the first conductive member 30A and the second conductive member 30B. Further, the first joint layer 24 is also in contact with the inner peripheral surface of the first joint portion 32 that defines the first opening 322 of the first joint portion 32. Therefore, the first bonding layer 24 includes a portion that penetrates the first opening 322.
  • the thickness t of the first joint portion 32 is 0.1 mm or more, and is not more than twice the maximum thickness T max of the first joint layer 24.
  • the maximum thickness T max of the first bonding layer 24 does not include the portion of the first bonding layer 24 penetrating the first opening 322.
  • the maximum thickness T max of the first bonding layer 24 is larger than the thickness of each of the pair of semiconductor elements 21.
  • the first bonding layer 24 extends from the second electrode 212 of the first switching element 21A to the first conductive member 30A.
  • a fillet 241 inclined with respect to the second electrode 212 is formed.
  • the fillet 241 is also formed on the first bonding layer 24 including a portion located between the second electrode 212 of the second switching element 21B and the first bonding portion 32 of the second conductive member 30B.
  • the fillet 241 formed on the first bonding layer 24 including the portion located between the second electrode 212 of the first switching element 21A and the first bonding portion 32 of the first conductive member 30A is described. set to target. As shown in FIG.
  • the fillet 241 has a first edge 241A in contact with the second electrode 212 of the first switching element 21A and a second edge 241B in contact with the first conductive member 30A.
  • the first edge 241A is located outward of the second edge 241B when viewed along the thickness direction z. Further, when viewed along the thickness direction, the first edge 241A is located closer to the outer edge (right edge in FIG. 14) of the first switching element 21A than the second edge 241B.
  • the second end edge 241B is in contact with the warped surface 341 of the tip end portion 34.
  • the inclination angle ⁇ 1 formed by the fillet 241 with respect to the second electrode 212 of the first switching element 21A is relative to the first joint surface 321 of the first joint portion 32. It is smaller than the inclination angle ⁇ 2 formed by the warped surface 341.
  • the second bonding layer 25 includes a portion located between the second main surface 121 of the second die pad 12 and the second bonding portion 35 of the first conductive member 30A. Moreover, it is in contact with the second joint surface 351 of the second joint portion 35.
  • the second bonding layer 25 has conductivity.
  • the second bonding layer 25 is, for example, lead-free solder. In addition, the second bonding layer 25 may be lead solder.
  • the second bonding layer 25 electrically bonds the first conductive member 30A and the second main surface 121. Therefore, the second joint portion 35 of the first conductive member 30A is electrically joined to the second main surface 121 by the second joint layer 25.
  • the second joint layer 25 includes a portion located between the covering portion 15A of the second input terminal 15 and the second joint portion 35 of the second conductive member 30B, as shown in FIGS. 10 and 11. Moreover, it is in contact with the second joint portion 35.
  • the second bonding layer 25 electrically bonds the second conductive member 30B and the covering portion 15A. Therefore, the second joint portion 35 of the second conductive member 30B is electrically joined to the covering portion 15A by the second joint layer 25.
  • the second joint layer 25 is also in contact with the inner peripheral surface of the second joint portion 35 that defines the second opening 352 of the second joint portion 35. Therefore, the second bonding layer 25 includes a portion that penetrates the second opening 352.
  • the third bonding layer 26 has a top electrode 221 of each of the pair of protective elements 22 and a third bonding portion 37 of either the first conductive member 30A or the second conductive member 30B. Includes the part located between and.
  • the third bonding layer 26 has conductivity.
  • the third bonding layer 26 is, for example, lead-free solder. In addition, the third bonding layer 26 may be lead solder.
  • the third bonding layer 26 electrically bonds each of the first conductive member 30A and the second conductive member 30B to the upper surface electrode 221 of any one of the pair of protective elements 22.
  • the third bonding portion 37 of the first conductive member 30A is electrically bonded to the upper surface electrode 221 of the first diode 22A by the third bonding layer 26.
  • the third bonding portion 37 of the second conductive member 30B is electrically bonded to the upper surface electrode 221 of the second diode 22B by the third bonding layer 26.
  • the third joint layer 26 is in contact with the third joint surface 371 of the third joint portion 37 of each of the first conductive member 30A and the second conductive member 30B. Further, the third joint layer 26 is also in contact with the inner peripheral surface of the third joint portion 37 that defines the third opening 372 of the third joint portion 37. Therefore, the third bonding layer 26 includes a portion that penetrates into the third opening 372.
  • the third junction layer 26 extends from the upper surface electrode 221 of the first diode 22A to the first conductive member 30A, and the upper surface thereof.
  • a fillet 261 inclined with respect to the electrode 221 is formed.
  • the fillet 261 is also formed in the third bonding layer 26 including a portion located between the upper surface electrode 221 of the second diode 22B and the third bonding portion 37 of the second conductive member 30B.
  • the description here is intended for a fillet 261 formed in a third joint layer 26 including a portion located between the upper surface electrode 221 of the first diode 22A and the third joint portion 37 of the first conductive member 30A.
  • the fillet 261 has a first edge 261A in contact with the top electrode 221 of the first diode 22A and a second edge 261B in contact with the first conductive member 30A.
  • the first edge 261A is located outward of the second edge 261B when viewed along the thickness direction z.
  • the second edge 261B is in contact with the warped surface 381 of the tip 38.
  • the inclination angle ⁇ 2 formed by the fillet 261 with respect to the upper surface electrode 221 of the first diode 22A is warped with respect to the third joint surface 371 of the third joint portion 37. It is smaller than the inclination angle ⁇ 3 formed by the surface 381.
  • the pair of gate wires 41 includes a first gate wire 41 (eg, right gate wire 41) and a second gate wire 41 (eg, left gate wire 41).
  • the first gate wire 41 is electrically bonded to the third electrode 213 (see FIG. 14) of one of the pair of semiconductor elements 21 and the covering portion 161A of the first gate terminal 161.
  • the second gate wire 41 is electrically bonded to the other third electrode 213 of the pair of semiconductor elements 21 and the covering portion 162A of the second gate terminal 162.
  • the first gate terminal 161 is conducting to the third electrode 213 of the first switching element 21A
  • the second gate terminal 162 is conducting to the third electrode 213 of the second switching element 21B.
  • the composition of each gate wire 41 includes, but is not limited to, the present disclosure.
  • the composition of each gate wire 41 may contain copper or may contain aluminum (Al).
  • the pair of detection wires 42 includes a first detection wire 42 (for example, the detection wire 42 on the right side) and a second detection wire 42 (for example, the detection wire 42 on the left side).
  • the first detection wire 42 is electrically bonded to the second electrode 212 (see FIG. 14) of one of the pair of semiconductor elements 21 and the covering portion 171A of the first detection terminal 171.
  • the second detection wire 42 is electrically bonded to the other second electrode 212 of the pair of semiconductor elements 21 and the covering portion 172A of the second detection terminal 172.
  • the first detection terminal 171 is conducting to the second electrode 212 of the first switching element 21A
  • the second detection terminal 172 is conducting to the second electrode 212 of the second switching element 21B.
  • the composition of each detection wire 42 includes, but is not limited to, the present disclosure.
  • the composition of each detection wire 42 may include copper or aluminum.
  • the sealing resin 50 covers each semiconductor element 21, each protective element 22, the first conductive member 30A, and the second conductive member 30B. Further, the sealing resin 50 covers a part of the first die pad 11 and a part of the second die pad 12.
  • the sealing resin 50 has electrical insulation.
  • the sealing resin 50 is made of a material containing, for example, a black epoxy resin.
  • the sealing resin 50 has a top surface 51, a bottom surface 52, a pair of first side surfaces 53, a pair of second side surfaces 54, a plurality of recesses 55, and a groove portion 56.
  • the top surface 51 faces the same side as the first main surface 111 of the first die pad 11 in the thickness direction z.
  • the bottom surface 52 faces the side opposite to the top surface 51 in the thickness direction z.
  • the first back surface 112 of the first die pad 11 and the second back surface 122 of the second die pad 12 are exposed to the outside.
  • the pair of first side surfaces 53 are located apart from each other in the first direction x. Each first side surface 53 is connected to a top surface 51 and a bottom surface 52. As shown in FIG. 5, the exposed portion 13B of the first input terminal 13, the exposed portion 14B of the output terminal 14, and the exposed portion 15B of the second input terminal 15 are exposed from one of the first side surfaces 53. Further, from the first side surface 53, the exposed portion 161B of the first gate terminal 161, the exposed portion 162B of the second gate terminal 162, the exposed portion 171B of the first detection terminal 171 and the exposed portion 172B of the second detection terminal 172 are exposed. is doing.
  • the pair of second side surfaces 54 are located apart from each other in the second direction y.
  • Each second side surface 54 is connected to a top surface 51 and a bottom surface 52.
  • each of the plurality of recesses 55 is located in the first direction x from the first side surface 53 (the first side surface 53 on which the plurality of terminals including the first input terminal 13 project). It is dented toward the surface and extends from the top surface 51 to the bottom surface 52 in the thickness direction z.
  • four recesses 55 are provided, but the present disclosure is not limited thereto.
  • the first recess 55 (for example, the rightmost recess 55 in FIG. 2) of the four recesses 55 is located between the first input terminal 13 and the first detection terminal 171 in the second direction y. There is.
  • the second recess 55 is between the first input terminal 13 and the second input terminal 15, and the third recess 55 is between the output terminal 14 and the second input terminal 15, and the fourth.
  • the recess 55 (the leftmost recess 55 in FIG. 2) is located between the output terminal 14 and the second detection terminal 172, respectively.
  • the creepage distance can be made relatively long. This is suitable for improving the withstand voltage of the semiconductor device A10.
  • the groove 56 is recessed from the bottom surface 52 in the thickness direction z and extends long along the second direction y.
  • the groove 56 has two ends spaced apart in the second direction y, each end connected to a corresponding second side surface 54 of a pair of second side surfaces 54.
  • the groove portion 56 allows the first die pad 11 and the above seven terminals (first input terminal 13, output terminal 14, second input terminal 15, first gate terminal 161 and second gate terminal 162, first detection terminal 171 and second).
  • the creepage distance of the sealing resin 50 between the detection terminal 172) and one of the terminals can be increased.
  • the groove 56 can increase the creepage distance of the sealing resin 50 between the second die pad 12 and one of the seven terminals. This is suitable for improving the withstand voltage of the semiconductor device A10.
  • the semiconductor device A10 includes a conductive member (first conductive member 30A) having a main body portion 31, a first joint portion 32, a first connecting portion 33, and a tip portion 34, the conductive member, and a semiconductor element 21 (first switching element).
  • a first bonding layer 24 for electrically bonding the electrode (second electrode 212) of 21A) is provided.
  • the tip portion 34 is inclined in a direction toward the electrode of the semiconductor element 21 as the distance from the first joint portion 32 increases.
  • the electrode of the semiconductor element 21 has a tip on the side opposite to the first junction 32 with respect to the tip 34 in the in-plane direction (second direction y in the semiconductor device A10).
  • the extended region 212A protruding from the portion 34 is included.
  • the inclination angle ⁇ 1 formed by the fillet 241 with respect to the electrode of the semiconductor element 21 is relative to the first joint surface 321 of the first joint portion 32. It is smaller than the inclination angle ⁇ 2 formed by the warped surface 341 of the tip portion 34.
  • the shape of the fillet 241 is suitable for reducing the thermal stress concentration acting on the interface between the electrode of the semiconductor element 21 and the first bonding layer 24.
  • the first connecting portion 33 When viewed along the in-plane direction (first direction x in the semiconductor device A10), the first connecting portion 33 is directed from the first main surface 111 of the first die pad 11 toward the main body portion 31 from the first joining portion 32. It is tilted away. When viewed along the thickness direction z, the boundary 332 between the first joint surface 321 of the first joint portion 32 and the first inclined surface 331 of the first connecting portion 33 is inward of the peripheral edge of the semiconductor element 21. To position. As a result, fillets 241 are formed on both ends of the first bonding layer 24 in the in-plane direction (second direction y in the semiconductor device A10) of the electrodes of the semiconductor element 21.
  • the thermal stress concentration acting on the interface between the electrode of the semiconductor element 21 and the first bonding layer 24 can be reduced more effectively.
  • the magnitudes of the inclination angles ⁇ 1 formed by the first inclined surface 331 with respect to the first joint surface 321 when viewed along the in-plane direction (first direction x in the semiconductor device A10) are 30 ° or more and 60 °.
  • the following is the shape of the fillet 241 suitable for relaxing the thermal stress concentration.
  • the thickness t of the first joint portion 32 is not more than twice the maximum thickness T max of the first joint layer 24. As a result, it is possible to reduce the thermal stress concentration acting on the interface between the first joint layer 24 and the first joint portion 32 while ensuring the thermal durability of the first joint layer 24.
  • the first joint portion 32 has a first opening 322 that penetrates in the thickness direction z.
  • the first bonding portion 32 is electrically bonded to the electrode of the semiconductor element 21 by the first bonding layer 24, the bubbles contained in the melted first bonding layer 24 are discharged to the outside by providing the first opening 322. be able to. Further, the first joint layer 24 is in contact with the inner peripheral surface of the first joint portion 32 that defines the first opening 322. As a result, the melted first bonding layer 24 can obtain a self-alignment effect in which the position of the first bonding portion 32 is set to a predetermined position with respect to the electrode of the semiconductor element 21.
  • the composition of the conductive member includes copper. This makes it possible to reduce the electrical resistance of the conductive member as compared with the wire containing aluminum in the composition. This is suitable for passing a large current through the semiconductor element 21.
  • the composition of the first die pad 11 contains copper. Further, the thickness T1 of the first die pad 11 is larger than the maximum thickness t max of the conductive member. This makes it possible to improve the efficiency of heat conduction in the in-plane direction while improving the heat conductivity of the first die pad 11. This contributes to the improvement of heat dissipation of the semiconductor device A10.
  • FIG. 19 is transparent to the sealing resin 50 for convenience of understanding.
  • the permeated sealing resin 50 is shown by an imaginary line.
  • the configuration of the second electrode 212 of each of the pair of semiconductor elements 21 and the configuration of the first joint portion 32 of each of the first conductive member 30A and the second conductive member 30B are the above-mentioned semiconductor devices. Different from A10.
  • the second electrode 212 of each semiconductor element 21 includes a pair of regions located apart from each other in the first direction x.
  • the first joint 32 of each of the first conductive member 30A and the second conductive member 30B includes a pair of regions located apart from each other in the first direction x.
  • the pair of regions of the first junction 32 of the first conductive member 30A is formed by the first junction layer 24 with respect to the pair of regions of the second electrode 212 of the first switching element 21A. They are individually and electrically joined.
  • the pair of regions of the first junction 32 of the second conductive member 30B are individually and electrically bonded to the pair of regions of the second electrode 212 of the second switching element 21B by the first junction layer 24. ing.
  • the semiconductor device A20 includes a conductive member (first conductive member 30A) having a main body portion 31, a first joint portion 32, a first connecting portion 33, and a tip portion 34, the conductive member, and a semiconductor element 21 (first switching element).
  • a first bonding layer 24 for electrically bonding the electrode (second electrode 212) of 21A) is provided.
  • the tip portion 34 is inclined in a direction toward the electrode of the semiconductor element 21 as the distance from the first joint portion 32 increases.
  • the electrode of the semiconductor element 21 has a tip on the side opposite to the first junction 32 with respect to the tip 34 in the in-plane direction (second direction y in the semiconductor device A10).
  • the extended region 212A protruding from the portion 34 is included. Therefore, the semiconductor device A20 can also relax the thermal stress acting on the semiconductor element 21 while dealing with a larger current. Further, the semiconductor device A20 can also obtain the effects other than the above obtained by the semiconductor device A10.
  • the present disclosure is not limited to the above-described embodiment.
  • the specific configuration of each part of the present disclosure can be freely redesigned.
  • the semiconductor device provided by the present disclosure and the method for manufacturing the semiconductor device include those described in the following appendix.
  • Appendix 1 A first die pad having a first main surface facing in the thickness direction, A semiconductor element having an electrode provided on the side facing the first main surface in the thickness direction and bonded to the first main surface.
  • a conductive member electrically bonded to the electrode and A first bonding layer for electrically bonding the conductive member and the electrode is provided.
  • the conductive member includes a main body portion, a first joint portion electrically bonded to the electrode by the first joint layer, a first connecting portion connecting the main body portion and the first joint portion, and the first joint portion. It has a tip that is located away from the connection and is connected to the first joint.
  • the tip portion When viewed along the in-plane direction of the first main surface, the tip portion is inclined in a direction toward the electrode as the distance from the first joint portion increases.
  • Appendix 2. The semiconductor device according to Appendix 1, wherein each of the first die pad and the conductive member contains copper.
  • the semiconductor device according to Supplementary Note 1 or 2 wherein the first bonding layer contains tin.
  • Appendix 4. When viewed along the in-plane direction, the first bonding layer is formed with a fillet that extends from the electrode to the conductive member and is inclined with respect to the electrode.
  • the fillet has a first edge in contact with the electrode and a second edge in contact with the conductive member.
  • the semiconductor device according to Appendix 3 wherein the first edge is located outward of the second edge when viewed along the thickness direction.
  • Appendix 5 The first joint portion has a joint surface facing the electrode and in contact with the first joint layer.
  • the tip portion has a warped surface that is connected to the joint surface and is inclined with respect to the joint surface.
  • the semiconductor device according to Appendix 4 wherein the angle of inclination of the fillet with respect to the electrode when viewed along the in-plane direction is smaller than the angle of inclination of the warped surface with respect to the joint surface.
  • Appendix 6 Appendix 6.
  • the semiconductor device according to Appendix 5 wherein the second edge is in contact with the warped surface.
  • Appendix 7. FIG. 5 or 6, wherein the first connecting portion is inclined toward the main body portion from the first joint portion in a direction away from the first main surface when viewed along the in-plane direction.
  • Appendix 8. The first connecting portion has an inclined surface that is connected to the joint surface and is inclined with respect to the joint surface.
  • the semiconductor device according to Appendix 7, wherein the boundary between the joint surface and the inclined surface is located inward of the peripheral edge of the semiconductor element when viewed along the thickness direction.
  • the semiconductor device according to Appendix 8 wherein the inclination angles formed by the inclined surface with respect to the joint surface when viewed along the in-plane direction are 30 ° or more and 60 ° or less.
  • Appendix 10. The semiconductor device according to any one of Supplementary note 3 to 9, wherein the thickness of the first junction portion is not more than twice the maximum thickness of the first junction layer.
  • Appendix 11. The first joint has an opening that penetrates in the thickness direction.
  • the semiconductor device according to Supplementary note 3 to 10 wherein the first bonding layer is in contact with the inner peripheral surface of the first bonding portion that defines the opening.
  • Appendix 12 The semiconductor device according to any one of Supplementary note 1 to 11, wherein the thickness of the first die pad is larger than the maximum thickness of the conductive member. Appendix 13.
  • a second die pad having a second main surface facing the same side as the first main surface in the thickness direction and being located away from the first die pad in the in-plane direction. Further, a second bonding layer for electrically bonding the conductive member and the second main surface is provided.
  • the conductive member has a second joint portion electrically bonded to the second main surface by the second joint layer, and a second connecting portion connecting the main body portion and the second joint portion.
  • the second die pad contains copper and is The semiconductor device according to any one of Supplementary note 1 to 12, wherein the second bonding layer contains tin.
  • Appendix 14 The semiconductor according to Appendix 13, wherein the second connecting portion is inclined toward the main body portion from the second joint portion in a direction away from the second main surface when viewed along the in-plane direction.
  • Appendix 15 The semiconductor device according to Appendix 13 or 14, wherein the thickness of the second die pad is larger than the maximum thickness of the conductive member.
  • Appendix 16. Further provided with a sealing resin covering a part of each of the first die pad and the second die pad, and the semiconductor element and the conductive member.
  • the first die pad has a first back surface facing away from the first main surface in the thickness direction.
  • the second die pad has a second back surface facing away from the second main surface in the thickness direction.
  • the semiconductor device according to any one of Supplementary note 13 to 15, wherein the first back surface and the second back surface are exposed from the sealing resin.
  • Appendix 17. The semiconductor device according to any one of Supplementary note 1 to 16, wherein the semiconductor element includes a compound semiconductor substrate.
  • Appendix 18. The semiconductor device according to Appendix 17, wherein the compound semiconductor substrate contains silicon carbide.

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  • Engineering & Computer Science (AREA)
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  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
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PCT/JP2021/023325 2020-07-20 2021-06-21 半導体装置 WO2022019023A1 (ja)

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CN202180060395.2A CN116134614A (zh) 2020-07-20 2021-06-21 半导体装置
JP2022538640A JPWO2022019023A1 (de) 2020-07-20 2021-06-21
DE112021002880.4T DE112021002880T5 (de) 2020-07-20 2021-06-21 Halbleiterbauelement
DE212021000207.2U DE212021000207U1 (de) 2020-07-20 2021-06-21 Halbleiterbauelement
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WO2023243343A1 (ja) * 2022-06-15 2023-12-21 ローム株式会社 半導体装置

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JP2015207675A (ja) * 2014-04-22 2015-11-19 三菱電機株式会社 パワー半導体装置
WO2016067414A1 (ja) * 2014-10-30 2016-05-06 三菱電機株式会社 半導体装置及びその製造方法
JP2016076670A (ja) * 2014-10-09 2016-05-12 三菱電機株式会社 電力用半導体装置
JP2016134540A (ja) * 2015-01-21 2016-07-25 三菱電機株式会社 電力用半導体装置
JP2016167480A (ja) * 2015-03-09 2016-09-15 三菱電機株式会社 電力用半導体装置

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JP6479532B2 (ja) 2015-03-30 2019-03-06 ルネサスエレクトロニクス株式会社 半導体装置の製造方法

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JP2015207675A (ja) * 2014-04-22 2015-11-19 三菱電機株式会社 パワー半導体装置
JP2016076670A (ja) * 2014-10-09 2016-05-12 三菱電機株式会社 電力用半導体装置
WO2016067414A1 (ja) * 2014-10-30 2016-05-06 三菱電機株式会社 半導体装置及びその製造方法
JP2016134540A (ja) * 2015-01-21 2016-07-25 三菱電機株式会社 電力用半導体装置
JP2016167480A (ja) * 2015-03-09 2016-09-15 三菱電機株式会社 電力用半導体装置

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Publication number Priority date Publication date Assignee Title
WO2023243343A1 (ja) * 2022-06-15 2023-12-21 ローム株式会社 半導体装置

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DE212021000207U1 (de) 2022-02-07

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