WO2022009456A1 - Dispositif d'exposition - Google Patents

Dispositif d'exposition Download PDF

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Publication number
WO2022009456A1
WO2022009456A1 PCT/JP2021/004524 JP2021004524W WO2022009456A1 WO 2022009456 A1 WO2022009456 A1 WO 2022009456A1 JP 2021004524 W JP2021004524 W JP 2021004524W WO 2022009456 A1 WO2022009456 A1 WO 2022009456A1
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WIPO (PCT)
Prior art keywords
exposure
photomask
substrate
target area
exposure target
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PCT/JP2021/004524
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English (en)
Japanese (ja)
Inventor
慎一 羽生
和彦 河東
Original Assignee
株式会社 ベアック
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Publication of WO2022009456A1 publication Critical patent/WO2022009456A1/fr

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/22—Exposing sequentially with the same light pattern different positions of the same surface
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically

Definitions

  • the present invention relates to an exposure apparatus.
  • an exposure device When forming a circuit pattern on a substrate or the like by a photolithography process, an exposure device is used that exposes the photosensitive material on the substrate via a photomask and transfers the mask pattern to the substrate.
  • the size of the photomask As the size of the substrate has increased, the size of the photomask has also increased.
  • the cost of the photomask depends on the plane size, and there is a problem that the cost increases as the photomask becomes larger. Further, in the batch exposure process using a large format photomask, there is also a problem that it is difficult to secure the accuracy of the outer peripheral portion with respect to the central portion of the substrate. Therefore, there is an exposure apparatus that divides an exposure target area of a substrate, uses a photomask corresponding to the divided exposure target area, and repeats an exposure process to transfer a predetermined mask pattern to a large-sized substrate.
  • the exposure target area of the substrate is divided into a first exposure target area and a second exposure target area, and a first photomask and a second photomask corresponding to the divided exposure target areas are prepared. Then, on the same stage, the first photomask is used to expose the first exposure target area, and then the second photomask is used to expose the second exposure target area, and the mask pattern is transferred to a large-sized substrate.
  • Patent Document 1 See, for example, Patent Document 1).
  • a substrate and a first photomask are arranged as an exposure apparatus for transferring a mask pattern to a large-sized substrate using a first photomask and a second photomask corresponding to the divided exposure target area.
  • an exposure apparatus having a first stage, a second stage in which a substrate and a photomask are arranged, and an optical path switching means for switching an optical path from a light source (see, for example, Patent Document 2).
  • the mask pattern of the first exposure target region is transferred in the first stage, then the optical path is switched by the optical path switching means, and the mask pattern of the second exposure target region is transferred in the second stage.
  • the optical path switching means alternately switches the light emitted from the light source between the optical path toward the first stage and the optical path toward the second stage.
  • the exposure apparatus described in Patent Document 1 after transferring the mask pattern to the first exposure target area using the first photomask on the same stage, the second photomask without sending the substrate downstream of the stage.
  • the mask pattern is transferred to the second exposure target area of the substrate by switching to. Therefore, each time each exposure target area (corresponding to one individual product) is loaded on the stage, the exposure process is repeated twice while switching the photomask each time, which increases the tact time and makes it difficult to increase productivity. There is a problem.
  • the use of a light-shielding plate may limit the composition of the transfer pattern. Further, since the light-shielding plate is arranged between the photomask and the substrate, there is a problem that the gap between the photomask and the substrate becomes large and the accuracy of the transfer pattern is lowered.
  • the mask transport means are arranged in parallel, but since the endless conveyor is used as the substrate transport means, the device is more than the first example. Can be miniaturized. However, since the substrate stops on the endless conveyor in each stage region, the substrate cannot be brought into direct contact with the stage. For this reason, it is difficult to maintain the alignment between the substrate and the photomask and the alignment of the substrate at the time of pattern transfer with high accuracy.
  • the light source is arranged on the upper side and the reflection mirror for optical path switching is arranged on the lower side across the special conveyor as the means for transporting the substrate, the light emitted from the light source passes through the special conveyor and the optical path. It will be reflected by the reflection mirror for switching. The light reflected by the reflection mirror for optical path switching passes through the special conveyor again. Therefore, there is a risk that the light transmittance will decrease due to deterioration of the special conveyor, scratches, or adhesion of dust.
  • the present invention has been made to solve at least one of such problems, reduce the cost of the photomask, transfer the mask pattern to a large format substrate with high accuracy, and perform split exposure. It is an attempt to realize an exposure apparatus capable of increasing productivity even if it is a method.
  • one of a plurality of exposure target areas arranged in series in the feed direction of a long substrate having a photosensitive layer is arranged in an arbitrary shape in the first exposure target area and the second exposure target area.
  • an exposure apparatus that divides by a virtual dividing line and transfers a mask pattern to a substrate using a first photomask corresponding to a first exposure target area and a second photomask corresponding to a second exposure target area.
  • the exposure apparatus has an exposure stage that supports at least one of the first exposure target area and the second exposure target area of the exposure target area of the substrate, and the exposure target area of the substrate is forward or opposite to the forward direction.
  • the substrate feed mechanism that feeds in the opposite direction and the exposure stage aligns the relative positions between the first exposure target area and the first photomask, or the second exposure target area and the second photomask.
  • the exposure apparatus In the first operation mode, has an alignment mechanism relative to the first exposure target area and the first photomask while the substrate feed mechanism feeds a plurality of exposure target areas one pitch at a time in the forward direction.
  • the exposure apparatus has a second exposure mechanism while the substrate feed mechanism feeds a plurality of exposure target areas in which pattern transfer by the first photomask is performed one pitch at a time in the opposite direction.
  • the relative position between the target area and the second photomask is aligned, and the exposure light irradiation mechanism is configured to irradiate the second photomask with the exposure light.
  • the exposure apparatus of the present invention it is possible to reduce the cost of the photomask, transfer the mask pattern to a large-sized substrate with high accuracy, and increase the productivity even in the split exposure method.
  • the exposure apparatus according to the embodiment of the present invention will be described with reference to the drawings.
  • the drawings described below are schematic views that do not strictly reflect the actual structure, dimensions, vertical and horizontal scales, and the like.
  • the "mask pattern” described below is the shape of a hole provided in the photomask through which the exposure light passes, and the “pattern transfer” is the irradiation of the exposure light through the photomask. It is a process of transferring a mask pattern to a substrate, and a "transfer pattern” is a pattern that can be formed on a substrate by this transfer process.
  • FIG. 1 is a plan view showing a part of the substrate 10 when the exposure target region 14 is divided in the width direction of the substrate 10, and shows an example of the transfer pattern 12.
  • the transfer pattern 12 shown in FIG. 1 is actually arranged at a high density and may be composed of a curved line, but is shown in FIG. 1 for simplification.
  • the feed direction (length direction) of the substrate 10 is "X direction”
  • the width direction is "Y direction”
  • the direction perpendicular to the XY plane is "Z direction” or "Z direction”.
  • the substrate 10 is a photosensitive substrate having a photosensitive layer formed on its surface, and is a long substrate wound in a roll shape.
  • a plurality of through holes 13 are formed on the substrate 10 illustrated in FIG. 1, and the transfer pattern 12 connects the lands of the two through holes 13. However, one transfer pattern 12 may connect a plurality of through holes 13.
  • the formation range of the transfer pattern 12 will be described as an exposure target region 14.
  • the exposure target region 14 conveniently represents the range of exposure light irradiation when forming the transfer pattern 12, and is not visible, but is arranged in series in the feed direction of the substrate 10.
  • One exposure target area 14 corresponds to the range of one individual product.
  • the exposure target area 14 is divided into a first exposure target area 14A and a second exposure target area 14B by a virtual dividing line 15 in the width direction of the substrate 10.
  • the virtual dividing line is a line that cannot be actually seen, and will be simply referred to as a dividing line in the following description.
  • the transfer pattern in the first exposure target region 14A is referred to as a transfer pattern 12A
  • the transfer pattern in the second exposure target region 14B is referred to as a transfer pattern 12B.
  • the transfer pattern 12 is formed by synthesizing the transfer pattern 12A and the transfer pattern 12B.
  • Recognition marks 16 are arranged at the four outer corners of the exposure target area 14 of the substrate 10.
  • the recognition mark 16 is a so-called alignment mark used for alignment with a photomask (first photomask 11A, second photomask 11B described later).
  • the mask pattern is transferred to the substrate 10 by one photomask 11 for the entire exposure target area 14, but when the plane size of the substrate 10 (exposure target area 14) becomes large, the outer periphery of the photomask 11 is increased. In the portion, the dimensional error tends to be larger than that in the central portion, and the position shift of the transfer pattern 12 with respect to the through hole 13 is likely to occur. Therefore, in the present embodiment, the exposure target area 14 is divided into the first exposure target area 14A and the second exposure target area 14B by the dividing line 15 in the width direction (Y direction) of the substrate 10.
  • the photomask corresponding to the first exposure target area 14A is referred to as the first photomask 11A (see FIG.
  • the mask pattern is transferred to the substrate 10 using a single photomask.
  • the dividing line 15 has an arbitrary shape capable of dividing the first exposure target region 14A and the second exposure target region 14B without dividing the transfer pattern.
  • FIG. 2 is a plan view showing the first photomask 11A.
  • the first photomask 11A is formed with a mask pattern 17A arranged in the first exposure target region 14A.
  • the mask pattern 17A is a hole through which the exposure light passes, and the transfer pattern 12A is formed on the substrate 10 by the exposure process.
  • Recognition marks 18 are provided at the four corners of the first photomask 11A.
  • the recognition mark 18 is arranged at the same position as the recognition mark 16 provided on the substrate 10, and the recognition mark 16 on the substrate 10 side can be visually recognized from above the first photomask 11A, and the recognition mark 16 can be visually recognized. It is possible to detect the positional deviation between the substrate 10 and the recognition mark 18 with the CCD camera 36 (see FIG. 7), which is a position detecting device, and perform relative alignment between the substrate 10 and the first photomask 11A. ..
  • the recognition mark 18 shown in FIG. 2 is circular, the shape is not limited as long as the recognition mark 16 can be detected by the CCD camera 36, such as being a triangle, a quadrangle, or another polygon.
  • the recognition mark 16 on the substrate 10 side is not limited to a circle but may be a cross character or the like.
  • the recognition marks 16 and 18 are arranged outside the exposure target area 14.
  • the area displayed by hatching in the figure is the light-shielding area 19, and the area of the second exposure target area 14B is the light-shielding area 19.
  • the first photomask 11A is composed of a mask pattern 17A formed in the range of the first exposure target region 14A and a light-shielding region 19 formed in at least the second exposure target region 14B.
  • FIG. 3 is a plan view showing the second photomask 11B.
  • the second photomask 11B is formed with a mask pattern 17B arranged in the second exposure target region 14B.
  • the mask pattern 17B is a hole through which the exposure light passes, and the transfer pattern 12B is formed on the substrate 10 by the exposure process.
  • Recognition marks 18 are arranged at the four corners of the second photomask 11B.
  • the recognition mark 18 is arranged at the same position as the recognition mark 16 provided on the substrate 10. That is, the first photomask 11A and the second photomask 11B are provided with recognition marks 18 having the same position and shape. Therefore, in the exposure process using two photomasks 11A and 11B, it is possible to suppress the positional deviation of the transfer patterns 12A and 12B with respect to the through holes 13.
  • the area displayed by hatching in the figure is the light-shielding area 19, and the range of the first exposure target area 14A is the light-shielding area 19.
  • the second photomask 11B is composed of a mask pattern 17B formed in the range of the second exposure target region 14B and a light-shielding region 19 formed in at least the first exposure target region 14A.
  • the first photomask 11A shown in FIG. 2 and the second photomask 11B shown in FIG. 3 are examples of hard masks in which a chromium light-shielding film is formed on a glass substrate.
  • FIG. 4 is a plan view showing a part of the substrate 10 when the exposure target region 22 is divided in the length direction of the substrate 10, and shows an example of the transfer pattern 21.
  • the transfer pattern 21 shown in FIG. 4 is actually arranged at a high density and may be composed of a curved line, but is shown in FIG. 4 for simplification.
  • the transfer pattern 21 shown in FIG. 4 represents an example of being extended (stretched) in the length direction.
  • the substrate 10 is a photosensitive substrate having a photosensitive layer formed on its surface, and is a long substrate wound in a roll shape.
  • a plurality of through holes 13 are formed on the substrate 10 illustrated in FIG. 4, and one transfer pattern 21 connects the lands of the two through holes 13. However, one transfer pattern 21 may connect a plurality of through holes 13.
  • the formation range of the transfer pattern 21 will be described as an exposure target region 22.
  • the exposure target region 22 conveniently represents the range of exposure light irradiation when forming the transfer pattern 21.
  • One exposure target area 22 corresponds to the range of one individual product.
  • the exposure target area 22 is divided into a first exposure target area 22A and a second exposure target area 22B by a dividing line 23 in the length direction (feeding direction) of the substrate 10.
  • the dividing line 23 may be a straight line or an arbitrary curve.
  • the exposed area 22 may be divided into two equal areas or different areas.
  • the transfer pattern in the first exposure target area 22A is referred to as a transfer pattern 21A
  • the transfer pattern in the second exposure target area 22B is referred to as a transfer pattern 21B
  • the transfer pattern 21 is formed by synthesizing the transfer pattern 21A and the transfer pattern 21B.
  • the photomask corresponding to the first exposure target area 22A is referred to as the first photomask 20A (see FIG. 5)
  • the photomask corresponding to the second exposure target area 22B is referred to as the second photomask 20B (see FIG. 6).
  • the mask pattern is transferred to the substrate 10 using a single photomask.
  • the first photomask 20A is represented by a dotted line
  • the second photomask 20B is represented by a alternate long and short dash line.
  • Recognition marks 16A are arranged at six locations in the exposure target area 22 of the substrate 10. The recognition mark 16A is used for aligning the substrate with the first photomask 20A and the second photomask 20B.
  • the recognition marks 16A are provided at six places, but the two recognition marks 16A at the boundary between the first exposure target area 22A and the second exposure target area 22B are the first photo. Commonly used for mask 20A and second photomask 20B. However, the recognition marks 16A corresponding to the first photomask 20A may be arranged at four places, and the recognition marks 16A corresponding to the second photomask 20B may be arranged at four places, respectively.
  • FIG. 5 is a plan view showing the first photomask 20A.
  • the first photomask 20A is formed with a mask pattern 24A arranged in the first exposure target area 22A (see FIG. 4).
  • the mask pattern 24A is a hole through which the exposure light passes, and the transfer pattern 21A is formed on the substrate 10 by the exposure process.
  • Recognition marks 18A are provided at the four corners of the first photomask 20A.
  • the recognition mark 18A is arranged at the same position as the recognition mark 16A provided on the substrate 10, and the recognition mark 16A on the substrate 10 side can be visually recognized from above the first photomask 20A, and the recognition mark 16A can be visually recognized. It is possible to detect the positional deviation between the substrate 10 and the recognition mark 18A with the CCD camera 36 (see FIG. 7), which is a position detecting device, and perform relative alignment between the substrate 10 and the first photomask 20A. .. Although the recognition mark 18A shown in FIG.
  • the recognition mark 16A is circular, the shape is not limited as long as the recognition mark 16A can be detected by the CCD camera 36, such as being a triangle, a quadrangle, or another polygon.
  • the recognition marks 16A and 18A are arranged outside the first exposure target area 22A.
  • the area displayed by hatching in the figure is the light-shielding area 19.
  • FIG. 6 is a plan view showing the second photomask 20B.
  • the second photomask 20B is formed with a mask pattern 24B arranged in the second exposure target area 22B (see FIG. 4).
  • the mask pattern 24B is a hole through which the exposure light passes, and the transfer pattern 21B is formed on the substrate 10 by the exposure process.
  • the position of the joint portion between the mask pattern 24A and the mask pattern 24B is adjusted with high accuracy. However, the joint portions of the two may be crossed within, for example, several ⁇ m.
  • Recognition marks 18A are provided at the four corners of the second photomask 20B.
  • the recognition mark 18A is arranged at the same position as the recognition mark 16A provided on the substrate 10, and the recognition mark 16A on the substrate 10 side can be visually recognized from above the second photomask 20B, and the recognition mark 16A can be visually recognized. It is possible to detect the positional deviation between the substrate 10 and the recognition mark 18A with the CCD camera 36 (see FIG. 7), which is a position detecting device, and align the substrate 10 with the second photomask 20B.
  • the recognition marks 16A and 18A are arranged outside the second exposure target area 22B. The area displayed by hatching in the figure is the light-shielding area 19.
  • the first photomask 20A has a plane size that covers the first exposure target region 22A.
  • the second photomask 20B has a plane size that covers the second exposure target area 22B.
  • the length of the exposed area 22 in the X direction is longer than the length of the first photomask 20A in the X direction when compared in terms of the length in the feed direction (length in the X direction) of the substrate 10.
  • the length of the exposure target area 22 in the X direction is longer than the length of the second photomask 20B in the X direction.
  • each of the first to third embodiments described below the exposure apparatus applied to the substrate 10, the first photomask 20A, and the second photomask 20B described with reference to FIGS. 4 to 6 will be described as a representative example. It should be noted that each embodiment is also applicable to the substrate 10, the first photomask 11A and the second photomask 11B described with reference to FIGS. 1 to 3, and the substrate 10 and the second photomask 11 described with reference to FIGS. 4 to 6 are also applicable. It has the same effect as the 1st photomask 20A and the 2nd photomask 20B.
  • the first photomask 20A is read as the first photomask 11A
  • the second photomask 20B is read as the second photomask 11B
  • the transfer pattern 21 is read as the transfer pattern 12
  • the exposure target area 22 is read as the exposure target area 14. It can be explained by reading the reference numerals of the constituent elements and the constituent members, respectively. Therefore, the description of the exposure apparatus 1 using the substrate 10, the first photomask 11A, and the second photomask 11B, which are the objects to be exposed described in FIGS. 1 to 3, will be omitted.
  • FIG. 7 is a front view showing a schematic configuration of the exposure apparatus 1
  • FIG. 8 is a plan view showing a schematic configuration of the exposure apparatus 1. Note that FIG. 8 omits the illustration of the exposure light irradiation mechanism 30.
  • the exposure apparatus 1 sets each exposure target area 22 as a first exposure target area for a plurality of exposure target areas 22 arranged in series in the feed direction (direction along the X direction) of a long substrate 10 having a photosensitive layer.
  • the 22A and the second exposure target area 22B are divided by a virtual dividing line 23 having an arbitrary shape, the first photomask 20A corresponding to the first exposure target area 22A and the second exposure target area 22B corresponding to the second exposure target area 22B.
  • the substrate 10 is intermittently pitch-fed in the forward direction (+ X direction in the figure) and is subject to the first exposure of the substrate 10.
  • the mask pattern 24A corresponding to the first photomask 20A is exposed to the region 22A (A exposure).
  • the substrate 10 is intermittently pitch-fed in the reverse direction (-X direction in the figure) while being second to the second exposure target region 22B of the substrate 10.
  • the mask pattern 24B corresponding to the photomask 20B is exposed (B exposure).
  • the exposure device 1 includes an exposure stage 25, a substrate feed mechanism 27, an alignment mechanism 28, and an exposure light irradiation mechanism 30. I have.
  • the exposure stage 25 is a stage for transferring the mask pattern 24A to the first exposure target area 22A in the first operation mode, and the mask pattern 24B is transferred to the second exposure target area 22B in the second operation mode. It will be the stage of transfer (see also FIGS. 4 to 6).
  • the exposure stage 25 supports at least one region of the exposure target region 22 of the substrate 10, the first exposure target region 22A or the second exposure target region 22B.
  • the exposure stage 25 is configured to adsorb and hold the lower surface of the exposure target region 14 of the substrate 10, respectively.
  • the exposure stage 25 has a suction hole for vacuum suctioning the substrate 10 (not shown).
  • the exposure stage 25 supports the first exposure target area 22A at least in the first operation mode, and supports the second exposure target area 22B in the second operation mode. Even in the mode, both the first exposure target region 22A and the second exposure target region 22B may be supported.
  • the substrate feed mechanism 27 is a mechanism that feeds the exposure target region 22 of the substrate 10 in the forward direction or in the reverse direction, which is the direction opposite to the forward direction.
  • the substrate feed mechanism 27 has a first roll 31 arranged on the left side of the drawing of the exposure stage 25 and a second roll 32 arranged on the right side of the drawing of the exposure stage 25.
  • the first roll 31 sends the substrate and the second roll 32 winds the substrate.
  • the second roll 32 sends the substrate and the first roll 31 winds the substrate.
  • a vacuum suction hole (not shown) is provided on the upper surface of the exposure stage 25 to suck and hold the substrate 10 during steps other than feeding the substrate.
  • the first roll 31 and the second roll 32 are controlled to start / stop at the same timing.
  • a nip roller may be arranged in front of the roll (first roll 31 or second roll 32) for winding the substrate in the substrate feeding direction.
  • the alignment mechanism 28 is a mechanism for aligning the substrate 10 and the photomask.
  • the alignment mechanism 28 is arranged on the exposure stage 25.
  • the alignment mechanism 28 aligns the relative position between the first exposure target region 22A and the first photomask 20A on the exposure stage 25 in the first operation mode. Further, the alignment mechanism 28 aligns the relative positions between the second exposure target region 22B and the second photomask 20B on the exposure stage 25 in the second operation mode.
  • the alignment mechanism 28 includes a CCD camera 36, which is a position detection device, and a photomask moving mechanism 34.
  • the CCD camera 36 which is a position detection device, detects the positions of the first exposure target area 22A and the first photomask 20A, or detects the positions of the second exposure target area 22B and the second photomask 20B.
  • the CCD camera 36 is arranged at a position capable of detecting the recognition mark 16A provided on the substrate 10 and the recognition mark 18A provided on the first photomask 20A and the second photomask 20B. There is.
  • the CCD camera 36 simultaneously detects the positions of the recognition marks 16A and 18A, and in the first operation mode, identifies the positions of the substrate 10, that is, the first exposure target area 22A and the first photomask 20A, and the first In the operation mode of 2, the positions of the substrate 10, that is, the second exposure target area 22B and the second photomask 20B are specified.
  • the photomask moving mechanism 34 can move the position of the mask (first photomask 20A, second photomask 20B) and change its posture.
  • the photomask moving mechanism 34 has an X-axis moving mechanism 38, a Y-axis moving mechanism 39, a Z-axis moving mechanism 40, and a ⁇ -axis rotating mechanism 41.
  • the photomask moving mechanism 34 aligns the position of the first photomask 20A with the first exposure target area 22A based on the detection result by the CCD camera 36 (position detection device), or the second exposure target area 22B based on the detection result. Align the position of the second photomask 20B with.
  • the photomask moving mechanism 34 recognizes the first photomask 20A (recognition mark 18) on the substrate 10 (recognition) based on the amount of displacement of the positions of the recognition marks 16A and 18A detected by the CCD camera 36. Align with the position of mark 16).
  • the photomask moving mechanism 34 is aligned in the plane direction by the X-axis moving mechanism 38 and the Y-axis moving mechanism 39, and the ⁇ -axis rotating mechanism 41 is centered on the Z-axis with respect to the X-axis or the Y-axis of the first photomask 20A. Correct the amount of tilt deviation.
  • the Z-axis moving mechanism 40 moves the first photomask 20A up and down to adjust the gap between the first photomask 20A and the substrate 10 to an optimum value (for example, several ⁇ m) during the exposure process. At the time of feeding the substrate, the Z-axis moving mechanism 40 raises the first photomask 20A to a height at which the substrate 10 does not contact. Also in the second operation mode, the second photomask 20B is handled in the same manner as in the case of the first operation mode described above.
  • the first photomask 20A and the second photomask 20B are fixed to the photomask moving mechanism 34 by a mask frame (not shown).
  • the first photomask 20A is switched to the second photomask 20B.
  • the device operator may manually switch the photomasks (first photomask 20A, second photomask 20B) to be exposed, or the device is configured so as to be automatically performed without the intervention of the operator. You may leave it.
  • the exposure light irradiation mechanism 30 uses the light emitted from the light source 45 as the exposure light 50 and irradiates the exposure light 50 onto the first photomask 20A or the second photomask 20B arranged on the exposure stage 25.
  • the exposure light irradiation mechanism 30 reflects the light emitted from the light source 45 and the light source 45 and irradiates the first photo mask 20A or the second photo mask 20B as the exposure light 50 with the first reflection mirror 47 and the second. It has a reflection mirror 48.
  • the optical system of the exposure light irradiation mechanism 30 lenses that convert the exposure light 50 into parallel light are arranged, but the illustration and description thereof are omitted here.
  • the exposure light irradiation mechanism 30 including the light source 45, the first reflection mirror 47, and the second reflection mirror 48 is an example, and is not limited to this configuration.
  • the exposure apparatus 1 may include a meandering control unit 75.
  • the meandering control unit 75 controls the meandering of the substrate 10 when the substrate 10 is fed, upstream of the feeding direction (forward or reverse direction) of the substrate when viewed from the exposure stage 25.
  • the substrate cleaning unit may be arranged at the same position as the meandering control unit 75.
  • the exposure apparatus 1 is configured to be able to operate in the first operation mode or the second operation mode as described above.
  • the substrate feed mechanism 27 feeds a plurality of exposure target regions 22 in the forward direction one pitch at a time, while the alignment mechanism 28 relatives between the first exposure target region 22A and the first photomask 20A.
  • the exposure light irradiation mechanism 30 is configured to irradiate the first photomask 20A with the exposure light 50.
  • the exposure (pattern transfer) at this time is referred to as "A exposure" (see also FIG. 10A described later).
  • the substrate feed mechanism 27 feeds the plurality of exposure target regions 22 on which the pattern transfer by the first photomask 20A is performed one pitch at a time in the opposite direction, while the alignment mechanism 28 is the second exposure target.
  • the exposure light irradiation mechanism 30 is configured to irradiate the second photomask 20B with the exposure light 50 by aligning the relative positions between the region 22B and the second photomask 20B.
  • the exposure (pattern transfer) at this time is referred to as "B exposure" ⁇ See also FIG. 10 (b) described later >>.
  • FIG. 9 is a process flow chart showing the main steps of the exposure method when the exposure apparatus 1 is used.
  • the substrate 10 Prior to the start of operation of the exposure apparatus 1, the substrate 10 is set at a position where the recognition marks 16 and 18 can be detected by the CCD camera 36 on the exposure stage 25. It is assumed that the transfer pattern 21 is not transferred to the first exposure target area 22A and the second exposure target area 22B of the substrate 10 at the start of operation.
  • the exposure method using the exposure apparatus 1 is roughly divided into A exposure (step S20) by the first operation mode using the first photomask 20A and the second photomask 20B. It is composed of B exposure (step S40) according to the second operation mode.
  • the first photomask 20A is set by fixing the first photomask 20A to the mask frame (not shown) (step S10).
  • a exposure (step S20) in the first operation mode is performed.
  • the A exposure (step S20) in the first operation mode includes the first photomask alignment (step S21), the pattern transfer by the first photomask (step S22), and one pitch feed in the forward direction of the substrate (step S23). Is done by repeating in this order.
  • the exposure apparatus 1 aligns the first photomask 20A with the substrate 10 on the exposure stage 25.
  • the CCD camera 36 detects the positional deviation of the recognition marks 16A and 18A, drives the photomask moving mechanism 34, and places the first photomask at an appropriate position with respect to the substrate 10 (first exposure target area 22A). Match 20A.
  • the exposure apparatus 1 irradiates the exposure light 50 from the exposure light irradiation mechanism 30 and transfers the mask pattern 24A to the first exposure target region 22A.
  • the substrate 10 is adsorbed and held at a predetermined position on the exposure stage 25 so that at least the first exposure target region 22A does not move on the exposure stage 25.
  • the exposure apparatus 1 feeds the substrate 10 in the forward direction by one pitch by the substrate feed mechanism 27. Specifically, the "next exposure target area 22 (particularly the first exposure target area 22A)" arranged next to the "exposure target area 22" that has been exposed can be irradiated with the exposure light 50.
  • the exposure device 1 feeds one pitch so as to reach the vicinity of the region (irradiable region 80, also see FIG. 10).
  • the process returns to the first photomask alignment (step S21), the first photomask alignment (step S21), the pattern transfer by the first photomask (step S22), and the forward one-pitch feed of the substrate (step S21).
  • Step S23) is repeated a predetermined number of times in this order.
  • the second photomask 20B is set by fixing the second photomask 20B to the mask frame (not shown) (step S30).
  • B exposure is performed in the second operation mode.
  • the B exposure (step S40) in the second operation mode includes the second photomask alignment (step S41), the pattern transfer by the second photomask (step S42), and one pitch feed in the reverse direction of the substrate (step S43). Is done by repeating in this order.
  • the photomask to be handled is the second photomask.
  • the above-mentioned first photomask alignment (step S21) and pattern transfer by the first photomask (step) are different only in that they are 20B and the direction in which the substrate is fed is the "reverse direction". Since it is the same as S22) and one-pitch feed in the forward direction of the substrate (step S23), the above description will be used and detailed description thereof will be omitted here.
  • the exposure apparatus 1 according to the first embodiment has a plurality of exposure target regions 22 arranged in series in the feed direction of a long substrate 10 having a photosensitive layer.
  • One of the above is divided into a first exposure target area 22A and a second exposure target area 22B by a virtual dividing line 23 having an arbitrary shape, and the first photomask 20A and the second exposure corresponding to the first exposure target area 22A.
  • This is an exposure apparatus that transfers a mask pattern to the substrate 10 using the second photomask 20B corresponding to the target area 22B.
  • the alignment mechanism 28, the exposure light irradiation mechanism 30, and the substrate feed mechanism 27 as described above are provided.
  • the length (distance) of the mask patterns 17A and 17B from the center portion is shortened by dividing the exposure target area 14 in the “width direction” of the substrate 10 by the dividing line 15. This makes it possible to transfer the mask patterns 17A and 17B to the substrate 10 with high accuracy.
  • the length (distance) from the center of the mask patterns 24A and 24B is obtained by dividing the exposure target area 22 in the “length direction” of the substrate 10 along the dividing line 23. Can be shortened, and the mask patterns 24A and 24B can be transferred to the substrate 10 with high accuracy.
  • the transfer pattern can be made highly accurate, the yield can be improved, and as a result, the productivity can be improved.
  • a mask pattern having the same length in the substrate feeding direction of the first photomask 20A and the second photomask 20B is transferred to the substrate 10. It is about half that of a photomask that supports batch exposure. This makes it possible to significantly reduce the costs of the first photomask 20A and the second photomask 20B.
  • the exposure apparatus 1 includes a substrate feed mechanism 27 that sends the exposure target region 22 (22A, 22B) of the substrate 10 in the forward direction or in the reverse direction opposite to the forward direction, and is the first operation.
  • the substrate feed mechanism 27 feeds the plurality of exposure target regions 22 one pitch at a time in the forward direction, while the alignment mechanism 28 aligns the relative positions between the first exposure target region 22A and the first photomask 20A.
  • the exposure light irradiation mechanism 30 is configured to irradiate the first photomask 20A with the exposure light 50.
  • the substrate feed mechanism 27 feeds a plurality of exposure target regions 22 in which the pattern transfer by the first photomask 20A is performed, one pitch at a time in the opposite direction.
  • the alignment mechanism 28 aligns the relative positions between the second exposure target area 22B and the second photomask 20B, and the exposure light irradiation mechanism 30 irradiates the second photomask 20B with the exposure light 50. ..
  • FIG. 10A once the first photomask 20A is set, the plurality of exposure target areas 22 (here, the first exposure target area 22A) are batch-processed. "A exposure” can be repeated.
  • FIG. 10B once the second photomask 20B is set, the plurality of exposure target areas 22 (here, the second exposure target area 22B) are batch-processed. "B exposure” can be repeated. That is, as shown in FIG. 9, even when trying to manufacture n products (n is a natural number of 2 or more), the photomask can be switched only once.
  • FIG. 10 schematically shows the state of the transfer pattern when exposed in the first operation mode using the exposure apparatus 1 and the state of the transfer pattern when exposed in the second operation mode. It is a plan view.
  • the photomask is switched for each exposure target area (corresponding to one individual product) like the exposure apparatus described in Patent Document 1. Since it is not necessary, the setup time is extremely short, and high productivity can be ensured.
  • the substrate 10 wound up in the second roll 32 is rolled into the second roll after the A exposure is once performed. It must be removed from 32, the substrate 10 must be refitted into the first roll 31, and then "B exposure” must be performed.
  • the exposure apparatus 1 according to the first embodiment the divided exposure can be performed without removing the wound substrate 10 from the second roll 32 and fitting it into the first roll 31. Therefore, high productivity can be ensured.
  • the cost of the photomask is reduced, the mask pattern is transferred to a large format substrate with high accuracy, and the productivity is achieved even in the split exposure method. Can be increased.
  • the exposed area 14 is divided by a virtual dividing line 15 in the width direction of the substrate 10.
  • the first photomask 11A is composed of a mask pattern 17A formed in the range of the first exposure target region 14A and a light-shielding region 19 formed in at least the second exposure target region 14B
  • the second photomask 11B is composed of a light-shielding region 19. It is composed of a mask pattern 17B formed in the range of the second exposure target region 14B and a light-shielding region 19 formed in at least the first exposure target region 14A.
  • the displacement of the transfer pattern tends to be larger on the outer peripheral side of the substrate than in the central portion as the format becomes larger.
  • the substrate feed direction it is possible to align with the substrate feed amount (feed pitch) to some extent, but it is difficult to correct the positional deviation in the width direction. Therefore, by dividing the exposure target region 14 in the width direction of the substrate 10 and exposing it, the length (distance) from the center of the mask patterns 17A and 17B is shortened, so that the exposure target region 14 is transferred to the substrate 10 with high accuracy. Is possible.
  • the exposed area 22 is divided by a virtual dividing line 23 in the length direction of the substrate 10, and the first photomask 20A is the first.
  • the second photomask 20B has a plane size that covers the first exposure target region 22A, and the second photomask 20B has a plane size that covers the second exposure target region 22B.
  • the cost of a photomask increases as the plane size (area) increases.
  • the areas of the first photomask 20A and the second photomask 20B are exposed.
  • the area is about half that of the photomask that collectively exposes the area 22.
  • the length of the exposed area 22 is the length of the first photomask 20A when compared in terms of the length of the substrate 10 in the feed direction.
  • the length of the exposure target area 22 is longer than that of the second photomask 20B (see also FIG. 10).
  • the exposure apparatus 1 By applying the exposure apparatus 1 according to the first embodiment while dividing the long exposure target area 22 by the virtual dividing line 23 in the length direction of the substrate 10 according to a preferred embodiment, a particularly long pattern is obtained. Even so, it is relatively easy to reduce the cost of the photomask, transfer the mask pattern to a large-sized substrate with high accuracy, and perform exposure while increasing productivity.
  • the alignment mechanism 28 detects the positions of the first exposure target area 22A and the first photomask 20A, or detects the positions of the second exposure target area 22B and the second photomask 20B (CCD).
  • the camera 36) and the first photomask 20A are aligned with the first exposure target area 22A based on the detection result, or the second photomask 20B is aligned with the second exposure target area 22B based on the detection result. It has a photomask moving mechanism 34. With such a configuration, it is possible to form a transfer pattern 21 having no positional deviation.
  • a meandering control unit 75 that controls meandering of the substrate 10 when the substrate 10 is fed is located upstream of the feeding direction (forward or reverse direction) of the substrate 10 when viewed from the exposure stage 25. It may be further arranged.
  • the meandering control unit 75 can reduce the meandering of the substrate 10 when the substrate 10 is unwound toward the exposure stage 25 (see also the irradiable region 80 in FIG. 10). Therefore, the alignment of the substrate on the exposure stage 25 can be performed with higher accuracy, which can contribute to more accurate pattern transfer.
  • the substrate 10 once wound up on the second roll 32 after the A exposure is not wound up with uniform tension as a result of performing the process in the first operation mode.
  • the substrate 10 tends to meander when unwinding in the reverse direction in the second operation mode for the subsequent B exposure.
  • the meandering control unit 75 can reduce the meandering of the substrate 10. Therefore, the alignment of the substrate on the exposure stage 25 can be performed with higher accuracy, and the B exposure with higher accuracy can be performed.
  • FIG. 11 is a plan view showing a schematic configuration of the exposure apparatus 2.
  • FIG. 12 is an explanatory diagram schematically showing the optical path switching of the exposure light when the exposure apparatus 2 is viewed from the left side (thick arrow direction) of FIG. 11.
  • the exposure apparatus 1 As shown in FIG. 11, in the exposure apparatus 2, the exposure apparatus 1 according to the first embodiment is arranged in two rows in parallel, and the mask pattern (not shown) is transferred to the substrate 10 by the exposure light irradiation mechanism 55. It is a device. Of the two rows of exposure lines, one (lower side of the figure) is referred to as the first exposure line 60, and the other (upper side of the figure) is referred to as the second exposure line 61. In the following description, a case where the photomasks 20A and 20B divided in the length direction of the substrate are used will be described as a typical example.
  • the components common to the exposure apparatus 1 according to the first embodiment are designated by the same reference numerals, and the description thereof will be omitted.
  • the exposure apparatus 2 has the first exposure line 60 when the configuration of the mechanism including the exposure stage 25, the substrate feed mechanism 27 (31, 32) and the alignment mechanism 28 is the first exposure line 60. It has the same configuration and further includes a second exposure line 61 arranged parallel to the first exposure line 60. In the exposure apparatus 2, the exposure light irradiation mechanism 55 is arranged above the intermediate position between the exposure stage 25 of the first exposure line 60 and the exposure stage 25 of the second exposure line 61.
  • the exposure light irradiation mechanism 55 is the first photomask 20Aa or the second photomask 20Ba of the first exposure line 60, or the first photomask 20Ab or the second photomask of the second exposure line 61.
  • 20Bb is provided with an optical path switching means 46 for switching and irradiating the exposure light 50.
  • the optical path switching means 46 is a means for switching the angle of the reflection mirror 49.
  • the reflection mirror 49 is switched to the posture represented by the reflection mirror 49A by the optical path switching means 46.
  • the optical path of the light emitted from the light source 45 is switched to the optical path 29A by the reflection mirror 49A, reflected by the first reflection mirror 47, and is perpendicular to the first photo mask 20Aa or the second photo mask 20Ba as the exposure light 50. Is irradiated to.
  • the reflection mirror 49 is switched to the posture represented by the reflection mirror 49B by the optical path switching means 46.
  • the optical path of the light emitted from the light source 45 is switched to the optical path 29B by the reflection mirror 49A, reflected by the second reflection mirror 48, and is perpendicular to the first photo mask 20Ab or the second photo mask 20Bb as the exposure light 50. Is irradiated to.
  • FIG. 13 is a process flow chart showing the main steps of the exposure method when the exposure apparatus 2 is used.
  • the flow on the left side of the drawing shows the process on the first exposure line 60, and the flow on the right side of the drawing shows the process on the second exposure line 61.
  • the main step of the exposure method using each exposure line basically uses the exposure apparatus 1 according to the first embodiment. This is the same as the main step of the exposure method (see FIG. 9). However, the main step of the exposure method when using the exposure apparatus 2 is each exposure line (first exposure line 60, second exposure line 61) that requires irradiation with the exposure light 50 when performing pattern transfer by the photomask. ), It is different from the main step (see FIG. 9) of the exposure method when the exposure apparatus 1 is used in that the optical path is switched.
  • the optical path switching (step S51) is executed by the optical path switching means 46 prior to the pattern transfer (step S22a) by the first photomask, and the second photo Prior to the pattern transfer by the mask (step S42a), the optical path switching (step S53) is executed by the optical path switching means 46 (see the flow on the left side of FIG. 13).
  • the optical path switching (step S52) is executed by the optical path switching means 46, and the pattern transfer by the second photomask (step S42b) is performed.
  • the optical path switching means 46 executes the optical path switching (step S54) (see the flow on the right side of FIG. 13). Since the other steps are the same as the main steps in the first embodiment, the description of the steps in the main steps in the first embodiment is used as they are, and the description thereof is omitted here.
  • the exposure apparatus 2 according to the second embodiment has basically the same configuration as the exposure apparatus 1 according to the first embodiment except that it has an optical path switching means 46 and the like. Therefore, among the effects of the exposure apparatus 1 according to the first embodiment, the corresponding effect is similarly obtained.
  • FIG. 14 is a front view showing a schematic configuration of the exposure apparatus 3.
  • the photomasks 20A and 20B divided in the length direction of the substrate are used will be described as a typical example.
  • the components common to the exposure apparatus 1 according to the first embodiment are designated by the same reference numerals, and the description thereof will be omitted.
  • the exposure apparatus 3 according to the third embodiment basically has the same configuration as the exposure apparatus 1 according to the first embodiment, but is capable of double-sided exposure from the front surface and the back surface of the substrate 10. Is different from the exposure apparatus 1 according to the first embodiment.
  • the substrate 10 has photosensitive layers on both the front and back surfaces as a premise.
  • the first photomask 20A or the second photomask 20B, the alignment mechanism 28, and the exposure light irradiation mechanism 30 arranged on the surface side (the upper side of the drawing) of the substrate 10 The first photomask 20A or the second photomask 20B, the alignment mechanism 28, and the exposure light irradiation mechanism 30 arranged on the back surface side (lower side of the drawing) of the substrate 10 face each other with the exposure stage interposed therebetween. It is arranged in. Further, the exposure stage 25 is provided with an opening 73 capable of irradiating the back surface (lower side of the drawing) of the substrate 10 with the exposure light 50.
  • the exposure method using the exposure apparatus 3 is basically the same as the main step (see FIG. 9) of the exposure method when the exposure apparatus 1 according to the first embodiment is used.
  • the photomasks (first photomask 20A, second photomask 20B) are handled not only on the front surface side but also on the back surface side of the substrate 10, and the alignment mechanism 28 (CCD camera 36, photomask moving mechanism 34) and the exposure light are used.
  • the alignment mechanism 28 CCD camera 36, photomask moving mechanism 34
  • the exposure light are used. It differs from the main step (see FIG. 9) of the exposure method when the exposure apparatus 1 is used in that the irradiation mechanism 30 is operated in parallel on the front surface side and the back surface side.
  • the first method is described. Since it is the same as that of the embodiment, the description of the steps of the main steps in the first embodiment is incorporated as it is, and the description thereof is omitted here.
  • the exposure apparatus 3 according to the third embodiment is basically the same as the exposure apparatus 1 according to the first embodiment, except that the exposure apparatus 3 can be exposed on both sides from the front surface and the back surface of the substrate 10. It has a similar configuration. Therefore, among the effects of the exposure apparatus 1 according to the first embodiment, the corresponding effect is similarly obtained.
  • the exposure devices 1, 2 and 3 have been described by giving an example of dividing the exposure target areas 14 and 22 into two in the width direction or the length direction of the substrate 10, but the present invention is not limited thereto. It is also possible to divide into 3 or 4 parts. For example, in the case of dividing into three, first, “A exposure” is performed using the first photomask while feeding the substrate 10 in the "forward direction” one pitch at a time by the substrate feed mechanism 27, and then to the second roll 32. “B exposure” is performed using the second photomask while feeding the wound substrate 10 one pitch at a time in the "reverse direction” by the substrate feeding mechanism 27, and then the substrate 10 wound on the first roll 31 is transferred.
  • the substrate feed mechanism 27 has been described by taking as an example a so-called Reel-To-Reel type mechanism having a first roll 31 and a second roll 32, but the mechanism is limited thereto. is not it.
  • the substrate feed mechanism 27 is realized by a so-called "slide table" on which a substrate on which a plurality of exposure target areas are arranged can be placed and the entire substrate can be slid in the forward direction or the reverse direction. May be good.
  • optical path 30, 55 ... Exposure light irradiation mechanism, 31 ... 1st roll, 32 ... 2nd roll, 34 ... Photomask moving mechanism, 36 ... CCD camera, 38 ... X-axis moving mechanism, 39 ... Y-axis moving mechanism, 40 ... Z-axis movement mechanism, 41 ... ⁇ -axis rotation mechanism, 45 ... light source, 46 ... optical path switching means, 47 ... first reflection mirror, 48 ... second reflection mirror, 49, 49A, 49B ... reflection mirror, 50 ... exposure light, 60 ... 1st exposure line, 61 ... 2nd exposure line, 73 ... opening, 75 ... meandering control unit, 80 ... irradiable area

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

La présente invention concerne un dispositif d'exposition qui divise une pluralité de zones cibles d'exposition disposées le long de la direction d'insertion du substrat 10 dans une première zone cible d'exposition 22A et dans une seconde zone cible d'exposition 22B avec une ligne de division ayant une forme donnée, et qui expose les zones cibles à la lumière à l'aide d'un premier photomasque 20A et d'un second photomasque 20B correspondant aux zones cibles respectives. Le dispositif d'exposition est pourvu d'une platine d'exposition 25, d'un mécanisme d'insertion de substrat 27, d'un mécanisme d'alignement 28 et d'un mécanisme de rayonnement de lumière d'exposition 30, et il est conçu de telle sorte que, dans un premier mode de fonctionnement, l'exposition est effectuée à l'aide du premier photomasque 20A tandis que la zone cible d'exposition 22A est alimentée dans une direction avant, et, dans un second mode de fonctionnement, l'exposition est effectuée à l'aide du second photomasque 20B tandis que la zone cible d'exposition 22B est alimentée dans la direction opposée. Il est possible de réduire les coûts pour les photomasques, de transférer de manière très précise des motifs de masque sur un substrat de grande taille, et d'augmenter la productivité même dans un procédé d'exposition par division.
PCT/JP2021/004524 2020-07-06 2021-02-08 Dispositif d'exposition WO2022009456A1 (fr)

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Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003228169A (ja) * 2001-11-30 2003-08-15 Topcon Corp 露光方法及び装置
JP2010243679A (ja) * 2009-04-03 2010-10-28 V Technology Co Ltd 露光方法及び露光装置
JP2010262212A (ja) * 2009-05-11 2010-11-18 Nsk Ltd 露光装置及び露光方法
JP2010266495A (ja) * 2009-05-12 2010-11-25 Nikon Corp 露光方法及び装置、並びにデバイス製造方法
JP2011075595A (ja) * 2009-09-29 2011-04-14 Nikon Corp 露光装置、露光方法、およびデバイス製造方法
JP2015049355A (ja) * 2013-08-30 2015-03-16 株式会社ニコン 反射ユニット
WO2016159200A1 (fr) * 2015-03-31 2016-10-06 株式会社ニコン Dispositif d'exposition, procédé de fabrication d'un écran plat, procédé de fabrication d'un dispositif, et procédé d'exposition

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08301495A (ja) * 1995-05-08 1996-11-19 Nireco Corp 帯状走行物の横方向位置制御装置
JP5117672B2 (ja) * 2005-10-25 2013-01-16 サンエー技研株式会社 露光方法及び露光装置
JP4556867B2 (ja) * 2005-12-28 2010-10-06 パナソニック株式会社 露光方法
JP5487981B2 (ja) * 2009-01-30 2014-05-14 株式会社ニコン 露光方法及び装置、並びにデバイス製造方法
JP5424271B2 (ja) * 2010-11-08 2014-02-26 株式会社ブイ・テクノロジー 露光装置
JP5631464B1 (ja) * 2013-08-30 2014-11-26 株式会社 ベアック 露光装置
JP6729954B1 (ja) * 2019-10-18 2020-07-29 株式会社 ベアック 露光装置

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003228169A (ja) * 2001-11-30 2003-08-15 Topcon Corp 露光方法及び装置
JP2010243679A (ja) * 2009-04-03 2010-10-28 V Technology Co Ltd 露光方法及び露光装置
JP2010262212A (ja) * 2009-05-11 2010-11-18 Nsk Ltd 露光装置及び露光方法
JP2010266495A (ja) * 2009-05-12 2010-11-25 Nikon Corp 露光方法及び装置、並びにデバイス製造方法
JP2011075595A (ja) * 2009-09-29 2011-04-14 Nikon Corp 露光装置、露光方法、およびデバイス製造方法
JP2015049355A (ja) * 2013-08-30 2015-03-16 株式会社ニコン 反射ユニット
WO2016159200A1 (fr) * 2015-03-31 2016-10-06 株式会社ニコン Dispositif d'exposition, procédé de fabrication d'un écran plat, procédé de fabrication d'un dispositif, et procédé d'exposition

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