WO2021237552A1 - 掩膜板、曝光方法和触控面板 - Google Patents

掩膜板、曝光方法和触控面板 Download PDF

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Publication number
WO2021237552A1
WO2021237552A1 PCT/CN2020/092806 CN2020092806W WO2021237552A1 WO 2021237552 A1 WO2021237552 A1 WO 2021237552A1 CN 2020092806 W CN2020092806 W CN 2020092806W WO 2021237552 A1 WO2021237552 A1 WO 2021237552A1
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WIPO (PCT)
Prior art keywords
strip
section
light
mask
shaped
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2020/092806
Other languages
English (en)
French (fr)
Chinese (zh)
Inventor
雷杰
郑启涛
许邹明
吴信涛
刘纯建
田�健
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BOE Technology Group Co Ltd
Hefei Xinsheng Optoelectronics Technology Co Ltd
Original Assignee
BOE Technology Group Co Ltd
Hefei Xinsheng Optoelectronics Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by BOE Technology Group Co Ltd, Hefei Xinsheng Optoelectronics Technology Co Ltd filed Critical BOE Technology Group Co Ltd
Priority to PCT/CN2020/092806 priority Critical patent/WO2021237552A1/zh
Priority to JP2021572617A priority patent/JP7666782B2/ja
Priority to US17/421,702 priority patent/US12050397B2/en
Priority to PCT/CN2021/080801 priority patent/WO2021238342A1/zh
Priority to CN202180000490.3A priority patent/CN114127631B/zh
Priority to EP21733362.4A priority patent/EP4009103A4/en
Publication of WO2021237552A1 publication Critical patent/WO2021237552A1/zh
Anticipated expiration legal-status Critical
Priority to US18/753,927 priority patent/US12547067B2/en
Ceased legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/201—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by an oblique exposure; characterised by the use of plural sources; characterised by the rotation of the optical device; characterised by a relative movement of the optical device, the light source, the sensitive system or the mask
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/42—Alignment or registration features, e.g. alignment marks on the mask substrates
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
    • G03F7/0007—Filters, e.g. additive colour filters; Components for display devices
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • G03F7/203—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure comprising an imagewise exposure to electromagnetic radiation or corpuscular radiation
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/22—Exposing sequentially with the same light pattern different positions of the same surface
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70466—Multiple exposures, e.g. combination of fine and coarse exposures, double patterning or multiple exposures for printing a single feature
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70475—Stitching, i.e. connecting image fields to produce a device field, the field occupied by a device such as a memory chip, processor chip, CCD, flat panel display
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
    • G06F3/0446—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means using a grid-like structure of electrodes in at least two directions, e.g. using row and column electrodes
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
    • G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
    • G06F2203/04103—Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
    • G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
    • G06F2203/04112—Electrode mesh in capacitive digitiser: electrode for touch sensing is formed of a mesh of very fine, normally metallic, interconnected lines that are almost invisible to see. This provides a quite large but transparent electrode surface, without need for ITO or similar transparent conductive material

Definitions

  • the present disclosure relates to the field of display technology, and in particular to a mask, an exposure method, and a touch panel.
  • the embodiments of the present disclosure provide a mask, an exposure method, and a touch panel.
  • embodiments of the present disclosure provide a mask including light-transmitting patterns and light-shielding patterns.
  • the mask further includes a first exposure area and a second exposure area, and the first exposure area is located in the first exposure area. At least one side of the second exposure area, wherein the first shading pattern in the first exposure area includes a strip-shaped shading portion;
  • the strip-shaped shading portion includes a first shading section and a second shading section, and the second shading section is located between the first shading section and the second shading pattern in the second exposure area, wherein the The width of the first light-shielding section in the first direction is smaller than the width of the second light-shielding section in the first direction;
  • the extending direction of the strip-shaped shading portion is a second direction
  • the first direction is a direction perpendicular to the second direction in a plane where the mask is located.
  • the strip-shaped shading part further includes a third shading section located between the first shading section and the second shading section, and the width of the third shading section in the second direction is from the first shading section to the second shading section.
  • the direction of the second shading section towards the first shading section gradually decreases.
  • the width of the third light-shielding section in the first direction is greater than or equal to the width of the first light-shielding section in the first direction.
  • first shading section, the third shading section and the second shading section are integrally formed.
  • the first light-shielding section includes an end part away from the second light-shielding section, and a width of the end part in the first direction is from the direction of the first light-shielding section away from the second light-shielding section gradually decreases.
  • the shape of the end portion is a triangle, and an angle of the triangle away from the second exposure area is an obtuse angle.
  • the second light shielding pattern includes a first part extending in a second direction and a second part extending in a third direction, and the second direction and the third direction intersect each other;
  • the strip-shaped shading part is located on one side of the second part along the second direction, and the strip-shaped shading part is connected with the first part in the second direction, and the strip-shaped shading part is located in the first direction.
  • the width is greater than the width of the first part in the first direction.
  • the embodiments of the present disclosure also provide an exposure method that uses the mask as described above to perform a splicing exposure process on a substrate, the substrate includes a third exposure area and a fourth exposure area, so
  • the methods include:
  • the third exposure area and the fourth exposure area at least partially overlap in the overlapping area, and the first light-shielding pattern of the mask is used to form the spliced exposure of the third exposure area and the fourth exposure area The pattern of the area.
  • execution of the first exposure includes:
  • the first protection part including a first strip-shaped protection part
  • the first strip-shaped protective part includes a first strip-shaped section and a second strip-shaped section, and the second strip-shaped section is located between the first strip-shaped section and the second protective part, and the The width of the first strip section in the first direction is smaller than the width of the second strip section in the first direction.
  • execution of the second exposure includes:
  • the third protection part includes a second strip-shaped protection part
  • the second strip-shaped protective part includes a third strip-shaped section and a fourth strip-shaped section, and the fourth strip-shaped section is located between the third strip-shaped section and the fourth strip-shaped section, and the The first strip-shaped protection part is connected to the second strip-shaped protection part.
  • first strip-shaped protective portion and the second strip-shaped protective portion at least partially overlap, and the width of the overlapping portion in the first direction is less than a preset width threshold.
  • the aligning the mask with the third exposure area of the substrate to perform the first exposure includes:
  • N is a positive integer
  • the aligning the fourth exposure area of the mask and the substrate to perform the second exposure includes:
  • N is a positive integer
  • embodiments of the present disclosure also provide a touch panel, including:
  • Touch sensing electrodes arranged on the substrate
  • the touch driving electrode and/or the touch sensing electrode have a conductive grid structure, and the conductive grid structure is manufactured by the exposure method according to any one of claims 8-13.
  • the conductive grid structure includes a plurality of conductive traces arranged in a grid
  • the conductive grid structure includes a plurality of conductive traces arranged in a grid
  • the line width of the conductive traces is 5-18um
  • the distance between two adjacent conductive traces is greater than 150um.
  • the conductive grid structure includes a first part and a second part located between two adjacent first parts, and the second part is a strip-shaped structure extending in a second direction.
  • the width of the strip structure in the first direction is smaller than the preset width threshold.
  • Figure 1 is a structural diagram of a conductive grid
  • Figure 2 is a schematic diagram of the structure of a mask
  • Figure 3 is a schematic diagram of the area distribution of the substrate
  • 4a-4c are schematic diagrams of the internal graphics of the spliced exposure area during two exposures
  • FIG. 5 is a schematic structural diagram of a mask provided by an embodiment of the present disclosure.
  • Fig. 6 is an enlarged view of area C in Fig. 5;
  • FIG. 7 is a schematic diagram of the position of the mask of FIG. 5 for two exposures on the substrate;
  • 8a-8c are schematic diagrams of the internal graphics of the stitching exposure area using the mask of FIG. 5 during two exposures;
  • Figures 9a-9e are schematic diagrams of the alignment of the first exposure and the second exposure.
  • the size of the mask also needs to increase accordingly.
  • the exposure machine has certain restrictions on the size of the mask, and large-size masks also have defects such as difficulty in manufacturing, high cost, and inconvenience in daily storage and use. Therefore, when manufacturing large-size display panels or touch When paneling, it is generally necessary to divide a large-size substrate into several areas, and use a mask to sequentially expose each area, and finally stitch together to form a large-size display panel or touch panel. This process is called a splicing exposure process.
  • the effective exposure area of the mask is 1100mm ⁇ 752mm
  • the large-size touch panel for example, the 65-inch external dimension is 1460mm ⁇ 831mm
  • the 75-inch external dimension is 1687mm ⁇ 957mm, because the external dimension exceeds the effective mask
  • the exposed area therefore needs to be exposed for multiple times, that is, the above-mentioned splicing exposure process is performed to form the desired pattern.
  • the splicing exposure process in the embodiments of the present disclosure is not limited to 2 exposures, and may include more exposures, such as 3 exposures, 4 exposures, 6 exposures, and so on.
  • Touch sensing electrodes and touch driving electrodes are the key to the touch sensing of a touch display. Pressing a finger on the screen will change the size of the capacitance formed by the touch sensing electrodes and touch driving electrodes. The change in capacitance at the place can thus determine the position of the finger press.
  • the touch sensing electrodes or the touch driving electrodes are arranged to cross each other, which can be designed as a conductive grid 10 as shown in FIG. 1.
  • a mask corresponding to the conductive grid structure needs to be used, Figure 2 A mask according to an embodiment of the present disclosure is shown. As shown in FIG.
  • the mask plate 20 includes a light-shielding part 21 and a light-transmitting part 22.
  • the light-shielding part 21 includes a plurality of light-shielding bars 211 arranged in a grid shape, and each light-shielding bar 211 has a predetermined width.
  • the gap surrounded by the plurality of light-shielding bars 211 forms the light-transmitting portion 22.
  • the light-shielding strip 211 may be made of opaque material (for example, metal).
  • the substrate is divided into two areas, as shown in FIG. 3, a first area 31 and a second area 32.
  • the mask 20 is used to expose the first area 31.
  • the mask 20 is used to expose the second area 32.
  • a complete pattern of touch sensing electrodes or touch driving electrodes is formed on the substrate, so as to meet the requirement of using small-sized masks to produce large-sized display panels or touch panels.
  • the splicing exposure area 33 the substrate
  • the above exposure area except for the stitching exposure area can be referred to as the normal exposure area.
  • the splicing exposure area 33 is schematically shown in FIG. 3.
  • the conductive grid 10 shown in FIG. 1 can be formed on the substrate, and each metal line has a predetermined width, and there is a predetermined gap between every two adjacent metal lines.
  • the line width of the metal lines formed in the splicing exposure area 33 is smaller than the predetermined width.
  • the light transmittance of the spliced exposure area is higher than the light transmittance of the normal exposure area, so that the spliced exposure area is brighter than the normal exposure area during display, that is, formed The mura phenomenon.
  • the reason for the Mula phenomenon is the alignment deviation between the two exposure processes. Specifically, as shown in FIG. 4a, in the first exposure process, due to the light-shielding effect of the light-shielding strip 211 of the mask plate 20, a first conductive line 41 having a predetermined width is formed in the splicing exposure area. Then, as shown in FIG. 4b, in the second exposure process, the light-shielding strips 211 of the mask 20 form second conductive lines 42 with a predetermined width in the splicing exposure area, which is limited by the positioning accuracy of the exposure machine and other factors. The second conductive line 42 and the first conductive line 41 will not be completely aligned, but a certain position deviation ⁇ will occur.
  • the part of the first conductive line 41 that is not blocked by the light shielding strip 211 will be Was exposed.
  • the finally formed third metal line 43 as shown in FIG. 4c, because the part of the first metal line 41 that is not blocked by the light-shielding strip 211 is exposed during the second exposure process, resulting in the line of the third metal line 43 finally formed
  • the width is smaller than the predetermined width, and the difference between the two is proportional to the positional deviation ⁇ between the two exposure processes.
  • the embodiment of the present disclosure provides a mask, as shown in FIGS. 5 and 6, including a light-shielding pattern 510 and a light-transmitting pattern 520.
  • the mask further includes a first exposure area A and a second exposure area B.
  • the first exposure area A is located on at least one side of the second exposure area B, wherein the first shading pattern 511 in the first exposure area A includes a strip-shaped shading portion 512;
  • the strip-shaped shading portion 512 includes a first shading section 5121 and a second shading section 5122, and the second shading section 5122 is located in the first shading section 5121 and the second shading pattern 513 in the second exposure area B , Wherein the width of the first light-shielding section 5121 in the first direction is smaller than the width of the second light-shielding section 5122 in the first direction;
  • the extending direction of the strip-shaped shading portion 512 is a second direction
  • the first direction is a direction perpendicular to the second direction in the plane where the mask is located.
  • the mask distinguishes a first light-shielding pattern used to form a first pattern in a spliced exposure area of a substrate and a second light-shielding pattern used to form a second pattern in a normal exposure area, wherein the first light-shielding pattern
  • the pattern includes a strip shading part for forming conductive lines at the splicing part.
  • the strip shading part includes a first shading section and a second shading section located between the first shading section and the second shading pattern.
  • the width in one direction is designed to be smaller than the width of the second shading section in the first direction, so that the size of the conductive lines formed at the splicing site after splicing exposure is moderate, which avoids that the conductive lines at the splicing site are too thin to cause open circuits. It can also avoid the problem of shadow elimination caused by the excessively thick conductive lines at the splicing, improve the splicing exposure quality, and further improve the yield of the display device. Therefore, the technical solution provided by the present disclosure can improve the yield of the display device.
  • the first exposure area A is located on at least one side of the periphery of the second exposure area B, and the mask includes a first light-shielding pattern 511 located in the first exposure area A and a second light-shielding pattern 513 located in the second exposure area B.
  • the pattern formed on the substrate twice by the first shading pattern 511 at least partially overlaps in the splicing exposure area, and the pattern formed twice on the substrate by the second shading pattern 513 is set in the splicing exposure area. Normal exposure area on both sides.
  • the width of the conductive line formed by splicing the exposure area is smaller than the width of the conductive line formed in the normal exposure area, the problem of wire breakage is likely to occur. Therefore, the width of the strip-shaped light shielding portion 512 in the first direction can be designed to be larger. Therefore, the conductive lines formed in the splicing exposure area still have a predetermined width close to the pattern in the normal exposure area after being exposed and etched twice.
  • the width of the strip-shaped light-shielding portion 512 is too large, the width of the conductive lines formed in the splicing exposure area on the substrate may be wider, resulting in low light transmittance of the splicing exposure area, resulting in the problem of image disappearance.
  • the strip-shaped shading portion 512 includes a first shading section 5121 and a second shading section 5122.
  • the second shading section 5122 is connected to the second shading pattern 513, and the first shading section 5121 is located far away from the second shading section 5122.
  • the extending directions of the first light-shielding section 5121 and the second light-shielding section 5122 are both in the second direction, and the width of the first light-shielding section 5121 in the first direction is smaller than the width of the second light-shielding section 5122 in the first direction.
  • the vertical direction is the first direction and the lateral direction is the second direction as an example for description.
  • the width of the first shading section 5121 in the first direction is smaller than that of the second shading section 5122, it is possible to avoid the problem of excessively wide splicing at the premise of ensuring the splicing width, and avoiding the splicing part from being too thick to block light This causes the problem of shadow elimination, improves the splicing quality, and further improves the yield of the display device.
  • the strip-shaped shading portion 512 further includes a third shading section 5123 located between the first shading section 5121 and the second shading section 5122, the third shading section 5123 The width in the first direction gradually decreases from the direction from the second shading section 5122 to the first shading section 5121.
  • the contour line of the outer surface of the third light shielding section 5123 may be a curved structure or a straight line structure, as shown in FIG. 6.
  • the third shading section 5123 is the transition section between the second shading section 5122 and the first shading section 5121.
  • the third shading section 5123 includes part A and part B.
  • the part B is located between the part A and the second shading section 5112.
  • the width of A in the first direction is smaller than the width of part B in the first direction.
  • the width of the third light-shielding section 5123 in the first direction is greater than or equal to the width of the first light-shielding section 5121 in the first direction.
  • the width in the first direction of the portion of the third light-shielding section 5123 closest to the first light-shielding section 5121 is greater than or equal to the width of the first light-shielding section 5121 in the first direction.
  • first light-shielding section 5121, the third light-shielding section 5123, and the second light-shielding section 5122 are integrally formed.
  • the first shading section 5121 includes an end 230 away from the second shading section 5122, and the width of the end 230 in the first direction is lower than that of the first shading section 5122.
  • the direction of the segment 5121 away from the second shading segment 5122 gradually decreases.
  • the width of the end portion 230 in the first direction gradually decreases from the direction away from the second light shielding section 2112, and the contour of the outer surface of the end portion 230 may be a curved structure or a straight structure, which is not limited here.
  • the end 230 can improve the reliability of the connection of the patterns formed by the two exposures of the mask.
  • the shape of the end portion 230 may be a triangle, and the angle of the triangle away from the second exposure area B is an obtuse angle.
  • the second shading pattern 513 includes a first portion 5131 extending in the second direction and a second portion 5132 extending in the third direction;
  • the strip-shaped shading portion 512 is located on one side of the second portion 5132 along the second direction, and the strip-shaped shading portion 512 is connected to the first portion 5131 in the second direction, and the strip-shaped shading portion 512 is located at The width in the first direction is greater than the width of the first portion 5131 in the first direction.
  • the foregoing second direction and the third direction intersect each other.
  • the first direction and the third direction are the same direction as an example for description.
  • the first part 5131 and the second part 5132 are both strip-shaped structures, and the width of the first part 5131 in the first direction may be equal to, smaller than or greater than the width of the second part 5132 in the second direction, which is not limited here.
  • the strip-shaped shading portion 512 is used to form conductive patterns (such as conductive lines) in the spliced exposure area, and since the width of the conductive lines formed in the spliced exposure area will be smaller than the width of the conductive lines formed in the normal exposure area, the strip The width of the shading portion 512 in the first direction is designed to be greater than the width of the first portion 5131 in the first direction, so that the width of the pattern formed in the splicing exposure area can be close to the line width of the wire formed in the normal exposure area .
  • the width of the first shading section 5121 of the strip shading portion 512 in the first direction is smaller than that of the second shading section 5122, it is possible to avoid the problem of excessively large splicing width under the premise of ensuring the splicing width. If the light is too rough to block the light, the image will disappear, the splicing quality will be improved, and the yield rate of the display device will be improved.
  • An embodiment of the present disclosure also provides an exposure method that uses the mask as described above to perform a splicing exposure process on a substrate, the substrate includes a third exposure area and a fourth exposure area, and the method includes:
  • the third exposure area and the fourth exposure area at least partially overlap in the overlapping area, and the first light-shielding pattern of the mask is used to form the spliced exposure of the third exposure area and the fourth exposure area The pattern of the area.
  • the mask distinguishes a first light-shielding pattern used to form a first pattern in a spliced exposure area of a substrate and a second light-shielding pattern used to form a second pattern in a normal exposure area, wherein the first light-shielding pattern
  • the pattern includes a strip shading part for forming conductive lines at the splicing part.
  • the strip shading part includes a first shading section and a second shading section located between the first shading section and the second shading pattern.
  • the width in one direction is designed to be smaller than the width of the second shading section in the first direction, so that the size of the conductive lines formed on the substrate corresponding to the splicing exposure area after splicing exposure and etching is moderate, which avoids splicing If the conductive line is too thin, it will cause a disconnection, and the problem of shadow removal caused by the thick conductive line at the splicing area can be avoided, the splicing exposure quality can be improved, and the yield of the display device can be improved. Therefore, the technical solution provided by the present disclosure can improve the yield of the display device.
  • the above-mentioned method of aligning the third exposure area and the fourth exposure area of the mask and the substrate can be done by laser alignment, or by mark alignment.
  • Figure 7 schematically shows the position of the mask during two exposures.
  • positive photoresist may be used in the exposure process. After the conductive material layer is formed on the substrate, the positive photoresist may be coated, and the corresponding drying, pre-baking and other steps may be completed. As for the positive photoresist, the photoresist in the area irradiated by ultraviolet rays undergoes cross-linking decomposition reaction, and this part can be dissolved in the developer. Therefore, the photoresist under the mask shading pattern during the exposure of the mask The photoresist in the area that is not covered by the shading pattern is cross-linked and decomposed and can be dissolved in the developing solution while maintaining the original characteristics. After the photoresist is developed, the conductive material layer (such as the metal layer) located under the photoresist is etched, and after the etching, a conductive pattern corresponding to and similar to the shape of the shading pattern in the mask can be obtained.
  • the conductive material layer such as the metal layer
  • a mask is used to expose the third area of the substrate, as shown in FIG. 8a, due to the shading effect of the first shading pattern 511 of the mask, a first protection part is formed in the splicing exposure area 810;
  • a mask is used to expose the fourth area of the substrate, and a third protection part 820 is formed in the splicing exposure area. Due to factors such as the positioning accuracy of the exposure machine, the strips of the mask are There will be a certain position deviation between the light shielding part 512 and the first protection part 810. As shown in FIG. The substrate is etched uniformly.
  • the photoresist in the unshielded area and the metal material below it will be etched away in the etching process, and the metal material in the shielded area is subject to the first protection part 810 and the third protection part 810.
  • the protection of the protective part 820 is retained, and a splicing pattern 830 as shown in FIG. 8c will be formed in the splicing exposure area after etching.
  • the splicing pattern may be a structure similar to a straight bar, that is, the first protection part 810 formed after the first exposure and the third protection part 820 formed after the second exposure are arranged directly opposite, as shown in FIG. 9a,
  • the resulting stitching pattern is approximately straight, but due to factors such as the positioning accuracy of the exposure machine, the first protection part formed after the first exposure and the third protection part formed after the second exposure are not directly opposite.
  • Figure 9b- Figure 9e exemplarily illustrate several situations where the alignment settings of the first exposure and the second exposure are deviated, taking the position of the third protection part shown in Figure 9a as a reference, where, The third protection part formed after the second exposure in FIG. 9b is shifted to the upper left compared to the third protection part in FIG.
  • the third protection part formed after the second exposure in FIG. 9c is compared with that in FIG. 9a
  • the third protection part is shifted to the lower left.
  • the third protection part formed after the second exposure in Fig. 9d is shifted to the upper right compared to the third protection part in Fig. 9a.
  • the third protection part is formed after the second exposure in Fig. 9e. Compared with the third protection part in FIG. 9a, the third protection part is shifted to the lower right.
  • the first protection part and the third protection part in the exposed area can be spliced on the substrate to ensure a certain overlap area, and ensure that the conductive lines at the splicing point are continuous after etching. At the same time, the problem of excessively wide conductive lines at the splicing can be avoided.
  • execution of the first exposure includes:
  • the first protection part including a first strip-shaped protection part
  • the first strip-shaped protective part includes a first strip-shaped section and a second strip-shaped section, and the second strip-shaped section is located between the first strip-shaped section and the second protective part, and the The width of the first strip section in the first direction is smaller than the width of the second strip section in the first direction.
  • the first shading pattern 511 of the mask includes a strip shading portion 512.
  • the strip shading portion 512 includes a first shading section 5121 and a second shading section 5122.
  • the second shading section 5122 and the second shading pattern 513 is connected, and the first shading section 5121 is located on the side of the second shading section 5122 away from the second shading pattern 513.
  • the extending directions of the first light-shielding section 5121 and the second light-shielding section 5122 are both in the second direction, and the width of the first light-shielding section 5121 in the first direction is smaller than the width of the second light-shielding section 5122 in the first direction.
  • a first strip-shaped protective part 812 is formed in the splicing exposure area.
  • the first strip-shaped protective part 812 includes a first strip-shaped section 8121 and a second strip-shaped section 8122.
  • the 8122 is connected to the second protection part, and the first strip section 8121 is located on the side of the second strip section 8122 away from the second protection part.
  • the extending directions of the first strip section 8121 and the second strip section 8122 are both in the second direction, and the width of the first strip section 8121 in the first direction is smaller than that of the second strip section 8122 in the first direction. width.
  • the strip-shaped light-shielding portion 512 further includes a third light-shielding section 5123 located between the first light-shielding section 5121 and the second light-shielding section 5122
  • the first strip-shaped protection portion 812 correspondingly includes the first strip-shaped section 8121 and the second light-shielding section 5123.
  • the fifth strip segment 8123 between the two strip segments 8122.
  • execution of the second exposure includes:
  • the third protection part includes a second strip-shaped protection part
  • the second strip-shaped protective part includes a third strip-shaped section and a fourth strip-shaped section, and the fourth strip-shaped section is located between the third strip-shaped section and the fourth strip-shaped section, and the The first strip-shaped protection part is connected to the second strip-shaped protection part.
  • the first shading pattern 511 of the mask includes a strip shading portion 512.
  • the strip shading portion 512 includes a first shading section 5121 and a second shading section 5122.
  • the second shading section 5122 and the second shading pattern 513 is connected, and the first shading section 5121 is located on the side of the second shading section 5122 away from the second shading pattern 513.
  • the extending directions of the first light-shielding section 5121 and the second light-shielding section 5122 are both in the second direction, and the width of the first light-shielding section 5121 in the first direction is smaller than the width of the second light-shielding section 5122 in the first direction.
  • a second strip-shaped protective portion 822 is formed in the splicing exposure area.
  • the second strip-shaped protective portion 822 includes a third strip-shaped segment 8221 and a fourth strip-shaped segment 8222.
  • the fourth strip-shaped segment 8222 is connected to the fourth protection part, and the third strip section 8221 is located on the side of the fourth strip section 8222 away from the fourth protection part.
  • the extension directions of the third strip section 8221 and the fourth strip section 8222 are both in the second direction, and the width of the third strip section 8221 in the first direction is smaller than that of the fourth strip section 8222 in the first direction. width.
  • the strip-shaped light-shielding portion 512 further includes a third light-shielding section 5123 located between the first light-shielding section 5121 and the second light-shielding section 5122
  • the second strip-shaped protection portion 822 correspondingly includes the third strip-shaped section 8221 and the second light-shielding section 5123.
  • the sixth strip segment 8223 between the four strip segments 8222.
  • the first strip-shaped protection portion 812 and the second strip-shaped protection portion 822 are connected, so as to realize the splicing of conductive patterns formed by two exposures and etching.
  • first strip-shaped protective portion 812 and the second strip-shaped protective portion 822 at least partially overlap, and the width of the overlapping portion in the first direction is less than a preset width threshold.
  • the above-mentioned preset width threshold may be 20um, and designing the overlapped part to be smaller than the preset width threshold can prevent the stitching pattern formed by stitching the exposure area from being too wide, and avoiding the problem of image loss.
  • first protection part, second protection part, third protection part and fourth protection part are all photoresist.
  • a mark alignment method is used to align the mask and the substrate.
  • a plurality of first alignment marks 71 are provided on the mask plate.
  • the first alignment marks 71 may be alignment holes.
  • a plurality of second alignment marks 34 are provided on the substrate.
  • the second alignment marks 34 may be cross alignment marks.
  • a plurality of first alignment marks 71 are provided on at least one side of the mask, and a plurality of second alignment marks 34 are provided on at least one side edge of the first area 31 of the substrate.
  • the substrate is placed under the mask, so that the first alignment mark 71 and the corresponding second alignment mark 34 are respectively aligned to align the mask with the first exposure area A of the substrate, and then the first exposure is performed.
  • the substrate is moved so that the plurality of first alignment marks 71 on the mask plate and the plurality of second alignment marks 34 provided on at least one side edge of the second area 32 of the substrate are respectively aligned to align the mask plate With the second exposure zone B of the substrate, then, a second exposure is performed.
  • the alignment error between the mask plate and the substrate is ⁇ 3 ⁇ m. Therefore, the conductive grid of the touch drive electrode in the produced touch panel is opposed to the conductive grid of the touch sensing electrode The position is relatively stable, which can effectively avoid moiré.
  • the embodiment of the present disclosure also provides a touch panel, including:
  • Touch sensing electrodes arranged on the substrate
  • the touch driving electrode and/or the touch sensing electrode have a conductive grid structure, and the conductive grid structure is produced by the exposure method described above.
  • the conductive grid structure includes a plurality of conductive traces arranged in a grid, the line width of the conductive traces is 5-18um, and the distance between two adjacent conductive traces is greater than 150um.
  • the conductive grid structure includes a third part and a fourth part located between two adjacent third parts, the fourth part is a strip-shaped structure extending in the second direction, so The width of the strip structure in the first direction is smaller than a preset width threshold.
  • the third part is a part of the conductive grid structure that is located in the normally exposed area
  • the fourth part is a part of the conductive grid structure that is located in the splicing exposure area.
  • the width of the fourth part in the first direction is smaller than the preset width threshold, so as to prevent the line width of the conductive traces in the spliced exposure area from being too large to block light, and to avoid the problem of shadow elimination.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Electromagnetism (AREA)
  • Human Computer Interaction (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Position Input By Displaying (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
PCT/CN2020/092806 2020-05-28 2020-05-28 掩膜板、曝光方法和触控面板 Ceased WO2021237552A1 (zh)

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PCT/CN2020/092806 WO2021237552A1 (zh) 2020-05-28 2020-05-28 掩膜板、曝光方法和触控面板
JP2021572617A JP7666782B2 (ja) 2020-05-28 2021-03-15 フォトマスク、露光方法及びタッチパネル
US17/421,702 US12050397B2 (en) 2020-05-28 2021-03-15 Mask, exposure method and touch panel
PCT/CN2021/080801 WO2021238342A1 (zh) 2020-05-28 2021-03-15 掩模版、曝光方法和触控面板
CN202180000490.3A CN114127631B (zh) 2020-05-28 2021-03-15 掩模版、曝光方法和触控面板
EP21733362.4A EP4009103A4 (en) 2020-05-28 2021-03-15 MASK, EXPOSURE METHOD AND TOUCH PANEL
US18/753,927 US12547067B2 (en) 2020-05-28 2024-06-25 Mask, exposure method and touch panel

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CN114127631B (zh) 2024-06-18
CN114127631A (zh) 2022-03-01
US12050397B2 (en) 2024-07-30
JP2023528099A (ja) 2023-07-04
EP4009103A1 (en) 2022-06-08
US12547067B2 (en) 2026-02-10
US20220342295A1 (en) 2022-10-27
WO2021238342A1 (zh) 2021-12-02
JP7666782B2 (ja) 2025-04-22

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