WO2017206577A1 - 一种掩膜板 - Google Patents

一种掩膜板 Download PDF

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Publication number
WO2017206577A1
WO2017206577A1 PCT/CN2017/077812 CN2017077812W WO2017206577A1 WO 2017206577 A1 WO2017206577 A1 WO 2017206577A1 CN 2017077812 W CN2017077812 W CN 2017077812W WO 2017206577 A1 WO2017206577 A1 WO 2017206577A1
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WIPO (PCT)
Prior art keywords
region
completely
sub
boundary
transparent region
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PCT/CN2017/077812
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English (en)
French (fr)
Inventor
史大为
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京东方科技集团股份有限公司
鄂尔多斯市源盛光电有限责任公司
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Application filed by 京东方科技集团股份有限公司, 鄂尔多斯市源盛光电有限责任公司 filed Critical 京东方科技集团股份有限公司
Priority to US15/550,547 priority Critical patent/US20190101819A1/en
Publication of WO2017206577A1 publication Critical patent/WO2017206577A1/zh

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1337—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers
    • G02F1/13378—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers by treatment of the surface, e.g. embossing, rubbing or light irradiation
    • G02F1/133788—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers by treatment of the surface, e.g. embossing, rubbing or light irradiation by light irradiation, e.g. linearly polarised light photo-polymerisation
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1337—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers
    • G02F1/133776—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers having structures locally influencing the alignment, e.g. unevenness

Definitions

  • the present disclosure relates to the field of display technologies, and in particular, to a mask.
  • an organic resin material is used to form a resin layer, and some areas of the resin layer, such as a FPC IC (drive circuit on a flexible circuit board), need to be hollowed out under the resin layer.
  • Metal traces are exposed, and ITO (Indium Tin Oxide) electrode layers are required on the resin layer, and even metal traces are used to improve ITO resistance or use as leads. If there is metal residue at the hollowed out boundary of the resin layer, the circuit traces under the resin layer may be short-circuited, and the display panel may not be properly displayed.
  • the ashing time of the metal layer photoresist is generally increased to perform process correction measures.
  • the resin is thicker, and the slope of the boundary of the hollowed out area of the resin layer is steep, the effect is not satisfactory, and the influence on the CD (Critical Dimension) is too large.
  • a mask comprising: a completely transparent region and a completely opaque region
  • a semi-transmissive structure is disposed at a boundary position between the completely transparent region and the completely opaque region, and the translucency of the semi-transmissive structure is close to a side close to the completely transparent region. Said not at all One side of the light transmitting region gradually weakens.
  • the semi-transmissive structure includes: a boundary line between the completely transparent region and the completely opaque region at a boundary position between the completely transparent region and the completely opaque region A plurality of light blocking blocks arranged at intervals.
  • the gap between the adjacent two light blocking blocks is a preset gap capable of causing a light diffraction phenomenon between the adjacent two light blocking blocks, and/or the preset gap is smaller than the exposure adopted by the mask process. The resolution of the machine.
  • a width of a gap between any two adjacent ones of the plurality of light shielding blocks is equal.
  • the light shielding block is a rectangular block structure that is completely opaque.
  • the light transmittance of the gap between the plurality of light shielding blocks is gradually weakened from a side close to the completely light transmitting area toward a side close to the completely opaque area.
  • the light shielding block is made of the same material as the completely opaque region of the mask, and is connected as a unitary structure.
  • the mask is used to perform a masking process of the resin layer
  • the resin layer includes a hollowed out area corresponding to the completely transparent region and a non-corresponding to the completely opaque region a hollowed out area, wherein a non-hollowed area of the resin layer forms a metal layer at a first interface position with the hollowed out area;
  • a boundary line between the completely transparent region and the completely opaque region of the mask plate forms a plurality of boundary lines, and the plurality of boundary lines at least includes a first boundary line corresponding to the first boundary position, wherein The semi-transmissive structure is formed only at a position corresponding to the first boundary line.
  • the completely transparent region includes at least two sub-transparent regions, and the semi-transmissive structure is respectively disposed at a boundary between each sub-transparent region and the completely opaque region.
  • the two sub-completely transparent regions include a first sub-completely transparent region and a second sub-completely transparent region, wherein an area of the first sub-completely transparent region and the second sub-transparent region are completely transparent
  • the area of the area is different, and a plurality of first light shielding blocks are disposed at a boundary position between the first sub-completely transparent area and the completely opaque area, and the second sub-completely transparent area is completely impenetrable
  • a plurality of second light blocking blocks are disposed at a boundary position of the light regions.
  • an area of the first sub-completely transparent region is larger than an area of the second sub-completely transparent region.
  • the size of the first light blocking block is greater than or equal to the size of the second light blocking block.
  • the mask provided by the present disclosure is provided with a semi-transmissive structure at a boundary position between the completely transparent region and the completely opaque region, and the translucency of the semi-transmissive structure is from a vicinity of the completely transparent region.
  • the side laterally close to the completely opaque region is gradually weakened, and the slope of the slope at the boundary of the hollowed out region formed on the resin layer by the mask can be controlled and improved, and the slope of the slope is moderated, thereby avoiding The occurrence of a short circuit in the upper and lower layers of the resin layer due to the steep slope at the boundary of the hollowed out region of the resin layer.
  • FIG. 1 is a schematic view showing a short circuit phenomenon in a hollowed out region of a resin layer in the related art
  • FIG. 2 is a schematic cross-sectional structural view showing a slope at a boundary of a hollowed out region of a resin layer in the related art
  • FIG. 3 is a schematic structural view of a mask provided by some embodiments of the present disclosure.
  • FIG. 4 is a schematic structural view of a mask provided by some embodiments of the present disclosure.
  • FIG. 5 is a schematic cross-sectional view showing a slope of a mask formed at a boundary of a hollowed out region of a resin layer provided by some embodiments of the present disclosure.
  • the slope 12 at the boundary of the hollowed out region 11 of the resin layer 1 of the display panel may be relatively steep, and the metal traces below the resin layer 1 after being hollowed out 2 is exposed, after which metal layer 3 is deposited.
  • the slope of the slope 12 at the boundary of the hollowed out region 11 of the resin layer 1 is large, the thickness of the photoresist coating is large at the position of the slope 12 of the boundary.
  • the reflected light is scattered irregularly, affecting the efficiency of the exposure and the absorption of the ultraviolet light by the photoresist, resulting in the slope position at the boundary of the hollowed out region 11 of the resin layer 1 after development.
  • the etching of the subsequent metal layer 3 cannot be completely etched due to the influence of the photoresist, so that metal may exist at the slope position of the resin layer 1, and the metal may cause a short between the metal traces 2 under the resin layer, resulting in a short
  • the display is abnormal and the function is invalid.
  • the light transmissive region and the opaque region on the mask in the related art are distinguished by 100% light transmission and 100% opacity.
  • the contrast between the light-transmitting region and the opaque region is high and the thickness of the resin layer is large, so that after the exposure and development of the resin layer, a large slope appears at the boundary of the hollowed-out region of the resin layer.
  • the slope of the boundary is relatively steep, and the subsequent coating of the photoresist is difficult to expose and develop sufficiently.
  • the present disclosure shifts the key to solving the above problem from the process adjustment to the mask.
  • the structural improvement of the panel is improved by the slope angle of the slope at the boundary of the hollowed out region of the resin layer.
  • the present disclosure provides a mask which can be modified by using a mask profile formed at a boundary position of a hollowed out region of a resin layer formed by the mask, thereby improving the mask.
  • a short circuit occurs in the upper and lower layers of the resin layer.
  • the mask provided by the present disclosure includes: a completely transparent region 100 and a completely opaque region 200; at a boundary position between the completely transparent region 100 and the completely opaque region 200 A semi-transmissive structure 300 (also referred to as a partially transparent structure) is disposed, and the translucency of the semi-transmissive structure 300 is between the fully transparent region 100 and the completely opaque region 200.
  • the translucency of the semi-transmissive structure 300 gradually decreases from a side close to the completely transparent region 100 toward a side close to the completely opaque region 200.
  • the mask provided by the present disclosure is provided with a semi-transmissive structure 300 at a boundary position between the completely transparent region 100 and the completely opaque region 200, and the translucency of the semi-transmissive structure 300 is close to the complete light transmission.
  • One side of the region 100 gradually weakens toward the side close to the completely opaque region 200, as shown in FIG. 5, the slope 501 at the boundary of the hollowed out region formed on the resin layer 500 by the mask.
  • the slope is controlled and improved, and the slope of the slope 501 is moderated compared with the related art.
  • the slope of the slope 501 at the boundary of the hollowed out region of the resin layer 500 is gentle, and the lithography is performed.
  • the difference in thickness of the glue is small, and the light reflecting efficiency is better, and the residual residue of the photoresist is improved. Thereby, the occurrence of a short circuit of the upper and lower layers of the resin layer 500 due to the steep slope 501 at the boundary of the hollowed out region of the resin layer 500 is avoided.
  • the semi-transmissive structure 300 includes: a boundary position between the completely transparent region 100 and the completely opaque region 200.
  • a plurality of light blocking blocks 301 are arranged at intervals along the boundary line between the completely light transmitting region 100 and the completely opaque region 200 (the number of the light blocking blocks may be two or more).
  • the semi-transmissive structure 300 can be formed by sequentially arranging a plurality of light-shielding blocks 301 of a predetermined length at the boundary positions of the completely transparent region 100 and the completely opaque region 200, wherein, for example, As shown in FIG. 3, a plurality of light shielding blocks 301 have a gap therebetween, and the light transmittance of the gap is greater than 0 and less than 100%.
  • the light transmission intensity of the gap may be from a vicinity of the completely transparent light transmission region 100.
  • the side laterally adjacent to the completely opaque region 200 is gradually weakened, so that the slope 501 at the boundary of the hollowed out region is moderated when the hollowed out region is formed on the resin layer 500 by the mask.
  • the semi-transmissive structure 300 may also be implemented in other manners, for example:
  • the semi-transmissive structure 300 may be a monolithic visor that is gradually weakened from a side close to the completely transparent region 100 toward a side close to the completely opaque region 200.
  • the gap between the adjacent two light blocking blocks 301 is a preset gap capable of causing a light diffraction phenomenon between the adjacent two light blocking blocks 301.
  • the preset gap is smaller than a resolution of an exposure machine used in the mask process.
  • the gap between the adjacent light blocking blocks 301 is smaller than the resolution of the exposure machine, and due to the diffractive action, there is a certain transmittance under the light shielding block 301, and the photoresist is not completely resolved, so that the resin layer is A three-stage slope (ie, a fully resolved section, a partially resolved section, and a completely unresolved section) is formed at the boundary of the hollowed out area of 500, and since the gap of the light blocking block 301 is approached from the side close to the fully transparent area 100 One side of the completely opaque region 200 is gradually weakened, so that the slope 501 can be made relatively flat.
  • any two directions from the side close to the completely light-transmitting region 100 to the side close to the completely different region are equal.
  • the light shielding block 301 may be a rectangular block structure that is completely opaque.
  • the light shielding block 301 is made of the same material as the completely opaque region 200 of the mask, and is connected as a unitary structure. With the above scheme, the manufacturing process of the mask is simple.
  • the light shielding block 301 may adopt other structures, which are not limited thereto.
  • the hollowed out area on the resin layer 500 on the display substrate is usually formed by the completely transparent region 100 on the mask, and the non-hollowed area on the resin layer 500 is usually completely passed through the mask.
  • the opaque region 200 is formed in which a metal layer is formed on the non-hollowed region of the resin layer 500 at a first boundary position with the hollowed out region.
  • a boundary position between the completely transparent region 100 and the completely opaque region 200 of the mask plate forms a plurality of boundary lines
  • the plurality of boundary lines include at least a first boundary line corresponding to the first boundary position, wherein the semi-transmissive structure 300 is formed only at a position corresponding to the first boundary line.
  • the mask provided in this embodiment may be disposed at a position where the resin layer 500 needs to be aligned with the side on which the metal trace is subsequently formed, and in the other completely transparent region.
  • the semi-transmissive structure 300 may not be disposed at a boundary line between the interface position of 100 and the completely opaque region 200.
  • the completely transparent region 100 includes at least two sub-transparent regions, in each sub-transparent region and the completely opaque region 200.
  • the semi-transmissive structure 300 is disposed at the junction.
  • the two sub-transparent regions 100 are respectively a first sub-transparent region 101 and a second sub-transparent region 102, wherein The area of the first sub-completely transparent region 101 is different from the area of the second sub-completely transparent region 102, and the boundary between the first sub-completely transparent region 101 and the completely opaque region 200 is A plurality of first light blocking blocks 311 are disposed at the position, and a plurality of second light blocking blocks 312 are disposed at a boundary position of the second sub-complete light transmitting region 102 and the completely opaque region 200.
  • the sizes of the light shielding blocks 301 provided in the sub-complete light-transmitting regions 100 of different areas can be adaptively adjusted, and can be the same or different.
  • the first sub-complete transparent region 101 The area of the first light-shielding block 311 is greater than or equal to the size of the second light-shielding block 312.

Abstract

一种掩膜板，包括：完全透光区(100)和完全不透光区(200)；在完全透光区(100)和完全不透光区(200)的交界位置处设置有半透光结构(300)，且半透光结构(300)的透光性从靠近完全透光区(100)的一侧向靠近完全不透光区(200)的一侧逐渐减弱。

Description

一种掩膜板
相关申请的交叉引用
本申请要求于2016年5月30日提交中国专利局、发明名称为“一种掩膜板”，申请号为201620514549.7的优先权，其全部内容据此通过引用并入本申请。
技术领域
本公开涉及显示技术领域，尤其涉及一种掩膜板。
背景技术
在制造显示面板的过程中，会使用有机树脂材料，形成树脂层，树脂层的有些区域，例如FPC IC(柔性电路板上的驱动电路)位置，需要将树脂层进行挖空处理，树脂层下面有金属走线暴露，而树脂层上需要做ITO(氧化铟锡)电极层，甚至有金属(metal)走线，用以改善ITO电阻或者做引线使用。若树脂层的挖空边界处有金属残留，则会导致树脂层下面的电路走线出现短路(short)，而导致显示面板无法正常显示。
目前，为了解决上述问题，通常增加金属层光刻胶的灰化时间，来进行工艺补正措施。但是树脂较厚，树脂层挖空区域的边界斜坡坡度较陡峭，效果不理想，对CD(Critical Dimension，关键尺寸)影响过大。
发明内容
本公开的目的在于提供一种掩膜板，其是通过对掩膜板进行改进，可以使得利用该掩膜板形成的例如树脂层的挖空区域边界位置处的斜坡形状(profile)进行改良，从而避免树脂层上下层金属发生短路的现象发生。
本公开所提供的技术方案如下：
一种掩膜板，包括：完全透光区和完全不透光区；
在所述完全透光区和所述完全不透光区的交界位置处设置有半透光结构，且所述半透光结构的透光性从靠近所述完全透光区的一侧向靠近所述完全不 透光区的一侧逐渐减弱。
可选地，所述半透光结构包括：在所述完全透光区和所述完全不透光区的交界位置处，沿所述完全透光区和所述完全不透光区的交界线间隔排列的多个遮光块。
进一步的，相邻两个遮光块之间的间隙为能够使得在相邻两个遮光块之间发生光衍射现象的预设间隙，和/或所述预设间隙小于掩膜工艺所采用的曝光机的分辨率。
进一步的，所述多个遮光块中任意两个相邻的遮光块之间的间隙的宽度相等。
进一步的，所述遮光块为完全不透光的矩形块结构。
进一步的，所述多个遮光块之间的间隙的透光性从靠近所述完全透光区的一侧向靠近所述完全不透光区的一侧逐渐减弱。
进一步的，所述遮光块与所述掩膜板的完全不透光区采用的材料相同，并连接为一体结构。
可选地，所述掩膜板用于进行树脂层的掩膜工艺，所述树脂层包括与所述完全透光区所对应的挖空区域以及与所述完全不透光区所对应的非挖空区域，其中所述树脂层的非挖空区域上在与所述挖空区域的第一交界位置处形成金属层；
所述掩膜板的完全透光区和完全不透光区的交界位置形成多条交界线，所述多条交界线至少包括与所述第一交界位置所对应的第一交界线，其中所述半透光结构仅形成于所述第一交界线所对应的位置上。
可选地，所述完全透光区至少包括两个子完全透光区，在每一子完全透光区与所述完全不透光区域的交界处分别设置有所述半透光结构。
可选地，所述两个子完全透光区包括第一子完全透光区和第二子完全透光区，其中所述第一子完全透光区的面积与所述第二子完全透光区的面积不同，且所述第一子完全透光区与所述完全不透光区域的交界位置处设置多个第一遮光块，所述第二子完全透光区与所述完全不透光区域的交界位置处设置多个第二遮光块。
进一步的，所述第一子完全透光区的面积大于所述第二子完全透光区的面积。
进一步的，所述第一遮光块的尺寸大于等于所述第二遮光块的尺寸。
本公开的有益效果如下：
本公开所提供的掩膜板，在完全透光区和完全不透光区的边界位置处设置半透光结构，且该半透光结构的透光性从靠近所述完全透光区的一侧向靠近所述完全不透光区的一侧逐渐减弱，可以对由该掩膜板在树脂层上形成的挖空区域的边界处斜坡的坡度进行控制改良，斜坡的坡度缓和，从而避免了由于树脂层挖空区域边界处斜坡较陡峭而导致的树脂层上下层金属发生短路的现象的发生。
附图说明
图1示出相关技术中树脂层的挖空区域发生短路现象的示意图；
图2示出相关技术中树脂层的挖空区域的边界处斜坡的断面结构示意图；
图3示出本公开一些实施例所提供的掩膜板的结构示意图；
图4示出本公开一些实施例所提供的掩膜板的结构示意图；
图5示出本公开一些实施例所提供的掩膜板在树脂层的挖空区域边界处形成的斜坡的断面结构示意图。
具体实施方式
为使本公开实施例的目的、技术方案和优点更加清楚，下面将结合本公开实施例的附图，对本公开实施例的技术方案进行清楚、完整地描述。显然，所描述的实施例是本公开的一部分实施例，而不是全部的实施例。基于所描述的本公开的实施例，本领域普通技术人员所获得的所有其他实施例，都属于本公开保护的范围。
在相关技术中，示例性地，如图1和图2所示，显示面板的树脂层1的挖空区域11的边界处斜坡12会比较陡峭，且树脂层1挖空后下面的金属走线2暴露出来，之后沉积金属层3。在进行光刻工序时，由于树脂层1的挖空区域11边界的斜坡12的坡度较大，在边界的斜坡12位置上光刻胶涂覆厚度较大， 且曝光的光线照射到斜坡12的倾斜界面后，反射光散乱无规律，影响了曝光的效率和光刻胶对紫外光的吸收，导致显影后树脂层1的挖空区域11边界处的斜坡位置仍然有光刻胶残留。后续金属层3的刻蚀由于光刻胶的影响而无法刻蚀彻底，从而在该树脂层1的斜坡位置处会存在金属，金属会导致树脂层下面的金属走线2之间发生short，造成显示异常，功能失效。
相关技术中的掩膜板上透光区和不透光区是100％透光和100％不透光的区分。透光区和不透光区的对比度较高且树脂层的厚度较大，造成树脂层在曝光显影后，树脂层的挖空区域边界处有较大的斜坡出现。边界的斜坡相对陡峭，后续涂覆光刻胶很难曝光显影充分。
针对相关技术中树脂层挖空区域边界处斜坡陡峭而导致树脂层上下层金属走线之间发生short造成显示异常的问题，本公开是将解决上述问题的关键从工艺调整上转移到对掩膜板的结构改进上，以对树脂层的挖空区域边界处斜坡的坡度角进行改良。
本公开提供的一种掩膜板，其是通过对掩膜板进行改进，可以使得利用该掩膜板形成的例如树脂层的挖空区域边界位置处的斜坡形状(profile)进行改良，从而避免树脂层上下层金属发生短路的现象发生。
如图3所示，本公开所提供的掩膜板包括：完全透光区100和完全不透光区200；在所述完全透光区100和所述完全不透光区200的交界位置处设置有半透光结构300(也可称为部分透光结构)，半透光结构300的透光性介于完全透光区100和完全不透光区200之间。可选地，所述半透光结构300的透光性从靠近所述完全透光区100的一侧向靠近所述完全不透光区200的一侧逐渐减弱。
本公开所提供的掩膜板，在完全透光区100和完全不透光区200的边界位置处设置半透光结构300，该半透光结构300的透光性从靠近所述完全透光区100的一侧向靠近所述完全不透光区200的一侧逐渐减弱，如图5所示，可以对由该掩膜板在树脂层500上形成的挖空区域的边界处斜坡501的坡度进行控制改良，与相关技术相比，斜坡501的坡度缓和，后续进行树脂层500上层的金属层光刻工序时，由于树脂层500挖空区域的边界处斜坡501的坡度较缓，光刻胶的厚度差异较小，加之曝光反光效率较好，光刻胶残留情况有所改善， 从而避免了由于树脂层500挖空区域边界处斜坡501较陡峭而导致的树脂层500上下层金属发生短路的现象的发生。
在本公开所提供的掩膜板中，如图3所示，可选地，所述半透光结构300包括：在所述完全透光区100和所述完全不透光区200的交界位置处，沿所述完全透光区100和所述完全不透光区200的交界线间隔排列的多个遮光块301(遮光块的数目可以是两个或两个以上)。
采用上述方案，可以通过在所述完全透光区100和所述完全不透光区200的交界位置处依次排列多个预定长度的遮光块301来形成所述半透光结构300，其中，如图3所示，多个遮光块301之间具有间隙，间隙的透光率为大于0小于100％，可选地，该间隙的透光光强会从靠近所述完全透光区100的一侧向靠近所述完全不透光区200的一侧逐渐减弱，会使得在利用掩膜板在树脂层500上形成挖空区域时，挖空区域边界处的斜坡501较为缓和。
应当理解的是，上述方案仅是提供了一种所述半透光结构300的优选实施方式，在本公开的其他实施例中，所述半透光结构300还可以采用其他方式实现，例如：所述半透光结构300可以是一透光性从靠近所述完全透光区100的一侧向靠近所述完全不透光区200的一侧逐渐减弱的一整块的遮光板。
此外，在本公开所提供的实施例中，可选地，相邻两个遮光块301之间的间隙为能够使得在相邻两个遮光块301之间发生光衍射现象的预设间隙。可选地，所述预设间隙小于掩膜工艺所采用的曝光机的分辨率。
上述方案中，相邻遮光块301之间的间隙小于曝光机分辨率，由于衍射作用，这样在遮光块301下面有一定的透光度，又不会完全解析光刻胶，从而会在树脂层500的挖空区域边界处大致形成了三段斜坡(即，完全解析段、部分解析段和完全不解析段)，且由于遮光块301间隙从靠近所述完全透光区100的一侧向靠近所述完全不透光区200的一侧逐渐减弱，可使斜坡501衔接较为平缓。
此外，在本公开所提供的实施例中，可选地，如图3所示，从靠近所述完全透光区100一侧到靠近所述完全不同区的一侧的方向上，任意两个相邻的两个遮光块301之间的间隙的宽度相等。采用上述方案，可以保证在树脂层500上挖空区域的边界处形成的斜坡501坡度在各位置一致。
此外，在本公开所提供的实施例中，可选地，所述遮光块301可以为完全不透光的矩形块结构。可选地，所述遮光块301与所述掩膜板的完全不透光区200采用的材料相同，并连接为一体结构。采用上述方案，掩膜板的制造工艺简单。
应当理解的是，在本公开的其他实施例中，所述遮光块301还可以采用其他结构，对此不作限定。
此外，需要说明的是，显示基板上的树脂层500上的挖空区域通常通过掩膜板上的完全透光区100形成，树脂层500上的非挖空区域通常通过掩膜板上的完全不透光区200形成，其中，树脂层500的非挖空区域上在与所述挖空区域的第一交界位置处形成金属层。
在本公开所提供的实施例中，可选地，所述掩膜板的完全透光区100和完全不透光区200的交界位置形成多条交界线，所述多条交界线至少包括与所述第一交界位置所对应的第一交界线，其中所述半透光结构300仅形成于所述第一交界线所对应的位置上。
也就是说，本实施例所提供的掩膜板可以仅在树脂层500需要后续形成金属走线的一侧所对位的位置处设置所述半透光结构300，而在其他完全透光区100和完全不透光区200的交界位置的交界线处可以不设置所述半透光结构300。
此外，在本公开所提供的实施例中，可选地，所述完全透光区100至少包括两个子完全透光区，在每一子完全透光区与所述完全不透光区200域的交界处分别设置有所述半透光结构300。
可选地，如图4所示，以两个子完全透光区为例，所述两个子完全透光区100分别是第一子完全透光区101和第二子完全透光区102，其中所述第一子完全透光区101的面积与所述第二子完全透光区102的面积不同，且所述第一子完全透光区101与所述完全不透光区200域的交界位置处设置多个第一遮光块311，所述第二子完全透光区102与所述完全不透光区200域的交界位置处设置多个第二遮光块312。
采用上述方案，不同面积的子完全透光区100所设置的遮光块301的尺寸可以适应性地调整，可以相同或不同。可选地，所述第一子完全透光区101 的面积大于所述第二子完全透光区102的面积，所述第一遮光块311的尺寸大于等于所述第二遮光块312的尺寸。
以上所述仅是本公开的优选实施方式，应当指出，对于本技术领域的普通技术人员来说，在不脱离本公开技术原理的前提下，还可以做出若干改进和替换，这些改进和替换也应视为本公开的保护范围。

Claims (13)

  1. 一种掩膜板，包括：完全透光区和完全不透光区；
    在所述完全透光区和所述完全不透光区的交界位置处设置有半透光结构，且所述半透光结构的透光性从靠近所述完全透光区的一侧向靠近所述完全不透光区的一侧逐渐减弱。
  2. 根据权利要求1所述的掩膜板，其中，
    所述半透光结构包括：在所述完全透光区和所述完全不透光区的交界位置处，沿所述完全透光区和所述完全不透光区的交界线间隔排列的多个遮光块。
  3. 根据权利要求2所述的掩膜板，其中，
    相邻两个遮光块之间的间隙为能够使得在相邻两个遮光块之间发生光衍射现象的预设间隙。
  4. 根据权利要求2或3所述的掩膜板，其中，所述预设间隙小于掩膜工艺所采用的曝光机的分辨率。
  5. 根据权利要求2-4任一项所述的掩膜板，其中，
    所述多个遮光块中任意两个相邻的遮光块之间的间隙的宽度相等。
  6. 根据权利要求2-5任一项所述的掩膜板，其中，
    所述遮光块为完全不透光的矩形块结构。
  7. 根据权利要求2-6任一项所述的掩膜板，其中，
    所述多个遮光块之间的间隙的透光性从靠近所述完全透光区的一侧向靠近所述完全不透光区的一侧逐渐减弱。
  8. 根据权利要求2-7任一项所述的掩膜板，其中，
    所述遮光块与所述掩膜板的完全不透光区采用的材料相同，并连接为一体结构。
  9. 根据权利要求1-8任一项所述的掩膜板，其中，
    所述掩膜板用于进行树脂层的掩膜工艺，所述树脂层包括与所述完全透光区所对应的挖空区域以及与所述完全不透光区所对应的非挖空区域，其中所述树脂层的非挖空区域上在与所述挖空区域的第一交界位置处形成金属层；
    所述掩膜板的完全透光区和完全不透光区的交界位置形成多条交界线，所 述多条交界线至少包括与所述第一交界位置所对应的第一交界线，其中所述半透光结构形成于所述第一交界线所对应的位置上。
  10. 根据权利要求1-9任一项所述的掩膜板，其中，
    所述完全透光区至少包括两个子完全透光区，在每一子完全透光区与所述完全不透光区域的交界处分别设置有所述半透光结构。
  11. 根据权利要求10所述的掩膜板，其中，
    所述两个子完全透光区分别是第一子完全透光区和第二子完全透光区，其中所述第一子完全透光区的面积与所述第二子完全透光区的面积不同，且所述第一子完全透光区与所述完全不透光区域的交界位置处设置多个第一遮光块，所述第二子完全透光区与所述完全不透光区域的交界位置处设置多个第二遮光块。
  12. 根据权利要求11所述的掩膜板，其中，
    所述第一子完全透光区的面积大于所述第二子完全透光区的面积。
  13. 根据权利要求11或12所述的掩膜板，其中，
    所述第一遮光块的尺寸大于等于所述第二遮光块的尺寸。
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CN205880497U (zh) * 2016-05-30 2017-01-11 鄂尔多斯市源盛光电有限责任公司 一种掩膜板
CN107367908A (zh) * 2017-08-18 2017-11-21 武汉华星光电半导体显示技术有限公司 曝光光罩以及光阻材料图形化方法
CN108227290A (zh) * 2018-01-31 2018-06-29 京东方科技集团股份有限公司 掩膜板、使用其得到的有机保护层以及显示装置
CN108803232A (zh) * 2018-05-31 2018-11-13 云谷（固安）科技有限公司 曝光光罩及其制作方法、光阻材料图形化方法及蚀刻方法
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CN111462615B (zh) * 2020-04-27 2022-04-08 Tcl华星光电技术有限公司 显示面板及其制作方法
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CN113031387A (zh) * 2021-02-26 2021-06-25 合肥维信诺科技有限公司 一种掩膜版及显示面板的制作方法
CN113235046B (zh) * 2021-05-10 2023-04-25 维沃移动通信有限公司 壳体的加工方法、壳体和电子设备

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1755472A (zh) * 2004-10-01 2006-04-05 三星电子株式会社 液晶显示器的制造方法以及用在其中的掩模
KR20070100492A (ko) * 2006-04-07 2007-10-11 엘지마이크론 주식회사 경사진 반투과부를 구비한 하프톤 마스크 및 그 제조 방법
KR20090110240A (ko) * 2008-04-16 2009-10-21 지오마텍 가부시키가이샤 포토마스크용 기판, 포토마스크 및 그의 제조방법
TW201003299A (en) * 2008-05-01 2010-01-16 Hoya Corp Multi-tone photomask and method of manufacturing the same, and pattern transfer method
CN102460645A (zh) * 2009-05-21 2012-05-16 Lg伊诺特有限公司 半色调掩膜及其制造方法
CN205880497U (zh) * 2016-05-30 2017-01-11 鄂尔多斯市源盛光电有限责任公司 一种掩膜板

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100229611B1 (ko) * 1996-06-12 1999-11-15 구자홍 액정표시장치의 제조방법
JP4135538B2 (ja) * 2003-03-17 2008-08-20 三菱電機株式会社 液晶表示装置の製造方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1755472A (zh) * 2004-10-01 2006-04-05 三星电子株式会社 液晶显示器的制造方法以及用在其中的掩模
KR20070100492A (ko) * 2006-04-07 2007-10-11 엘지마이크론 주식회사 경사진 반투과부를 구비한 하프톤 마스크 및 그 제조 방법
KR20090110240A (ko) * 2008-04-16 2009-10-21 지오마텍 가부시키가이샤 포토마스크용 기판, 포토마스크 및 그의 제조방법
TW201003299A (en) * 2008-05-01 2010-01-16 Hoya Corp Multi-tone photomask and method of manufacturing the same, and pattern transfer method
CN102460645A (zh) * 2009-05-21 2012-05-16 Lg伊诺特有限公司 半色调掩膜及其制造方法
CN205880497U (zh) * 2016-05-30 2017-01-11 鄂尔多斯市源盛光电有限责任公司 一种掩膜板

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