WO2018082396A1 - 一种掩膜板 - Google Patents

一种掩膜板 Download PDF

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Publication number
WO2018082396A1
WO2018082396A1 PCT/CN2017/101225 CN2017101225W WO2018082396A1 WO 2018082396 A1 WO2018082396 A1 WO 2018082396A1 CN 2017101225 W CN2017101225 W CN 2017101225W WO 2018082396 A1 WO2018082396 A1 WO 2018082396A1
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light
region
completely
mask
diffraction
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PCT/CN2017/101225
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English (en)
French (fr)
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吴四权
张心杰
陈号
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京东方科技集团股份有限公司
合肥鑫晟光电科技有限公司
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Application filed by 京东方科技集团股份有限公司, 合肥鑫晟光电科技有限公司 filed Critical 京东方科技集团股份有限公司
Priority to US15/761,639 priority Critical patent/US11086214B2/en
Publication of WO2018082396A1 publication Critical patent/WO2018082396A1/zh

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials

Definitions

  • the present disclosure relates to the field of display technologies, and in particular, to a mask.
  • the thin film transistor circuit on the array substrate of the liquid crystal display panel has a multi-layer structure, and it is necessary to connect different layers of circuits through via holes.
  • the profile of the boundary slope of the via hole is often large, resulting in ITO (indium oxide).
  • ITO indium oxide
  • the slope angle of the via hole can be reduced to some extent, but the CD (Critical Dimension) of the via hole formed by increasing the exposure dose becomes large, which does not meet the design requirements.
  • a mask comprising: a completely transparent region and a completely opaque region; and an opening pattern formed with the mask is formed at an interface between the completely transparent region and the completely opaque region
  • the portion of the boundary slope corresponds to a portion of the light transmissive region that is capable of transmitting light.
  • the partially transparent region includes a light diffraction structure capable of causing a light diffraction phenomenon when light is transmitted.
  • the light diffraction structure comprises:
  • the gap between two adjacent diffraction bumps is such that two adjacent diffraction bumps can be made
  • a first predetermined gap of light diffraction phenomenon occurs between the blocks, and the first predetermined gap is smaller than a resolution of an exposure machine used in the mask process.
  • the shape of the diffraction bump is a triangle, and the plurality of diffraction bumps are arranged in a zigzag manner, and from a side close to the completely transparent region to a side close to the side of the completely opaque region. Upper, the distance between adjacent two diffraction bumps gradually decreases.
  • the diffraction bumps are made of the same material as the completely opaque regions of the mask, and are connected as a unitary structure.
  • the light diffraction structure includes a diffractive light-shielding ring disposed around a boundary line between the completely transparent region and the completely opaque region, and an edge of the completely opaque region There is a second preset gap between them.
  • the second preset gap can cause a light diffraction phenomenon when the light passes through, and the second preset gap is smaller than a resolution of the exposure machine used in the mask process.
  • the diffractive shading ring is a completely opaque rectangular or circular ring structure formed of the same material as the completely opaque region of the mask.
  • the partially transparent structure comprises: a semi-transparent film disposed at a boundary position between the completely transparent region and the completely opaque region.
  • FIG. 1 is a schematic view showing a via hole formed in a mask in the related art
  • FIG. 2 is a schematic view showing a via hole formed in a mask according to an embodiment of the present disclosure
  • Figure 3 is a plan view of the mask of Figure 2;
  • FIG. 4 is a schematic view showing a via hole formed in a mask according to an embodiment of the present disclosure
  • Figure 5 is a plan view of the mask of Figure 4.
  • FIG. 6 is a schematic view showing a via hole formed in a mask according to an embodiment of the present disclosure
  • Figure 7 is a plan view of the mask of Figure 6;
  • Figure 8 is a top plan view of a mask provided in an embodiment of the present disclosure.
  • Fig. 1 is a schematic view showing the structure of a mask for forming a via hole in the related art.
  • an opening is formed in the mask 1 by a laser to form a light-transmitting region 2.
  • the photoresist corresponding to the intermediate portion of the light-transmitting region 2 is used.
  • the edge slope of the via hole can be reduced only by appropriately increasing the exposure dose (dose) and flattening the light energy density curve.
  • dose exposure dose
  • CD Critical Dimension
  • a mask is provided in the embodiment of the present disclosure, which can make an opening pattern (such as a via hole, etc.) formed by using the mask, without changing the critical dimension of the opening pattern of the original product design ( Based on Critical Dimension (CD), the slope profile at the boundary position of the opening pattern formed by the mask is improved, and the boundary slope angle of the opening pattern is effectively reduced, thereby increasing the control of the opening pattern etching device ( Margin) Reduces the occurrence of defects in the upper ITO layer, prevents various related product problems, and improves yield.
  • an opening pattern such as a via hole, etc.
  • the mask provided by the embodiment of the present disclosure includes: a completely transparent region 100 , a completely opaque region 200 , and the completely transparent region 100 and the completely opaque region. A portion of the light-transmissive region at the junction position between 200 and for the position of the boundary slope 11 of the opening pattern formed by the mask, which enables the light portion to pass therethrough.
  • the mask provided by the present disclosure provides a partial light-transmissive region at a boundary position between the completely transparent region 100 and the completely opaque region 200. Since the partially transparent region can make part of the light transparent, the transmission can be weakened. The light energy, and thus, the photoresist 20 is partially exposed at the boundary position of the formed opening pattern (via 10 as shown in the figure) because the energy is weakened after passing through the partially transparent region, Compared with the related art, the slope angle of the boundary slope 11 of the via 10 can be reduced, thereby On the basis of changing the opening pattern CD of the original product design, the profile of the slope 11 at the boundary position of the opening pattern is modified to reduce the edge exposure energy of the opening pattern, thereby improving the opening pattern etching device control, Reduce the occurrence of defects in the upper ITO layer, prevent various related product problems, and improve yield.
  • the photoresist 20 may be a positive photoresist or a negative photoresist.
  • the completely transparent region 100 is used for mask formation of the via 10; when the photoresist 20 is a negative photoresist, the completely opaque region 200 is used for The mask forms a via 10 .
  • the opening pattern may include a via or other opening pattern.
  • the photoresist 20 as a positive photoresist and the opening pattern as a via.
  • the partially transparent region may be a light diffraction structure capable of causing light diffraction phenomenon when light is transmitted, and the size of the completely transparent region 100 on the mask is completely transparent to that of the mask in the related art shown in FIG.
  • the size of the region 2 may be slightly larger (the size of D3 in FIG. 2 is slightly larger than the size of D1 in FIG. 1).
  • the exposure energy is appropriately enhanced, and the light diffraction structure of the partially transparent region is passed through the portion.
  • the light of the light-transmitting region is diffracted by light, and the light energy is weakened, so that the photoresist 20 at the boundary position of the via 10 is partially exposed, thereby reducing the slope angle of the boundary slope 11 of the via 10.
  • the partially transparent region may also be a semi-transmissive film disposed at a boundary position between the completely transparent region 100 and the completely opaque region 200, and the completely transparent region 100 of the mask.
  • the CD size may be slightly larger than the CD size of the completely transparent region 2 of the mask in the related art shown in FIG. 1.
  • the exposure energy is appropriately enhanced, and the semi-transparent film is passed through the partially transparent region.
  • the light energy is weakened, so that the photoresist 20 at the boundary position of the via 10 is partially exposed, thereby reducing the slope angle of the boundary slope 11 of the via 10.
  • the partially transparent region may also be partially transparent to light, and is not limited herein.
  • FIGS 2 and 3 are schematic structural views of an embodiment provided by the present disclosure.
  • the mask includes: a completely transparent region 100, a completely opaque region 200, and a region between the fully transparent region 100 and the completely opaque region 200.
  • the light portion can be made Part of the light transmission area.
  • the partially transparent region adopts a light diffraction structure.
  • the light diffraction structure includes: at a boundary position between the completely transparent region 100 and the completely opaque region 200, along a boundary line between the completely transparent region 100 and the completely opaque region 200 A plurality of diffraction bumps 300 are arranged.
  • the gap between the adjacent two diffraction bumps 300 is a first preset gap capable of causing a light diffraction phenomenon between the adjacent two diffraction bumps 300, and the first preset gap is smaller than the mask.
  • the first preset gap may also be referred to as a first gap.
  • the gap between the diffraction bumps 300 is smaller than the resolution of the exposure machine. Due to the light diffraction effect, there is a certain transmittance under the diffraction bump 300, and the photoresist 20 is not completely resolved, so that The slope 11 formed at the boundary of the via 10 is relatively gentle.
  • the diffraction bumps 300 are triangular in shape, and the plurality of the diffraction bumps 300 are arranged in a zigzag manner, and are close to the completely transparent region 100.
  • the distance between the adjacent two diffraction bumps 300 gradually decreases from one side to the side close to the side of the completely opaque region 200.
  • the boundary between the completely transparent region 100 on the mask and the completely opaque region 200 is designed as a zigzag structure, that is, a zigzag light diffraction structure, and the transmitted light is diffracted when passing through the zigzag structure, and is sawtoothed.
  • the light energy in the vicinity of the structure is attenuated, thereby partially exposing the photoresist 20 at the edge of the via 10 to the effect of reducing the slope angle of the boundary slope 11 of the via 10.
  • the diffraction bumps 300 may also have other shapes, such as a rectangle or the like, and the specific shape of the diffraction bumps 300 is not limited herein.
  • the diffraction bump 300 is made of the same material as the completely opaque region 200 of the mask, and is connected as a unitary structure.
  • the diffraction bump 300 can be integrally formed with the completely opaque region 200 of the mask, and the manufacturing process is simple.
  • the diffraction bump 300 may also be different from the material of the completely opaque region 200 of the mask according to actual needs, for example, the diffraction convex Block 300 can be made of a semi-transmissive material.
  • the mask includes: a completely transparent region 100, and a completely opaque region. 200, and at a boundary position between the completely light-transmitting region 100 and the completely opaque region 200 and for the position of the boundary slope 11 of the via hole 10 formed by the mask, enabling the light portion to pass through Part of the light transmission area.
  • the partially transparent region adopts a light diffraction structure
  • the light diffraction structure includes: a diffractive light shielding ring 500.
  • the diffractive shading ring 500 is disposed around a boundary line between the completely transparent region 100 and the completely opaque region 200, and has a second predetermined gap 501 between the edges of the completely opaque region 200.
  • the second preset gap 501 is capable of causing a light diffraction phenomenon when the light is transmitted, and the second preset gap 501 is smaller than a resolution of the exposure machine used in the mask process.
  • the second preset gap may also be referred to as a second gap.
  • the diffractive shading ring 500 and the completely opaque region 200 may be joined together by at least one connecting block 505.
  • the gap between the diffractive shading ring 500 and the completely opaque region 200 can be made.
  • a light diffraction phenomenon occurs, so that the light energy is weakened, so that the photoresist 20 at the edge of the via 10 is partially exposed, and the effect of reducing the slope angle of the boundary slope 11 of the via 10 is achieved.
  • a ring of slits 506 may be separately designed on the diffractive light-shielding ring 500, and the slit 506 can cause light diffraction phenomenon when the light passes through, and the slit The width is smaller than the resolution of the exposure machine used in the mask process.
  • the diffractive shading ring 500 is a completely opaque rectangle formed of the same material as the completely opaque region 200 of the mask. Or a circular ring structure.
  • the diffractive light-shielding ring 500 may be the same material of the completely opaque region 200 of the mask, and a slit pattern may be drawn at a position corresponding to the inner side of the via hole 10 on the mask plate during fabrication.
  • the manufacturing process is simple.
  • the diffractive shading ring 500 may also be different from the material of the completely opaque region 200 of the mask according to actual needs, for example, the diffractive shading Ring 500 can be made from a semi-transmissive material.
  • FIG. 6 and FIG. 7 are schematic diagrams showing the structure of another embodiment provided by the present disclosure.
  • the mask includes: a completely transparent region 100 and a completely opaque region 200; a boundary between the completely transparent region 100 and the completely opaque region 200 The position is formed with a partial light-transmissive region for permitting transmission of the light portion corresponding to the position of the boundary slope 11 of the via hole 10 formed by the mask; wherein the partial light-transmitting region employs the semi-transmissive film 600.
  • the light transmittance of the semi-transmissive film 600 is not limited, and may be a 1/2 light transmission film, a 1/3 light transmission film, or a 2/3 light transmission film.

Abstract

一种掩膜板，掩膜板包括：完全透光区（100）、完全不透光区（200）、以及位于完全透光区（100）和完全不透光区（200）之间的交界位置处的部分透光区。

Description

一种掩膜板
相关申请的交叉引用
本申请主张在2016年11月1日在中国提交的中国专利申请号No.201621175982.9的优先权，其全部内容通过引用包含于此。
技术领域
本公开涉及显示技术领域，尤其涉及一种掩膜板。
背景技术
目前液晶显示面板的阵列基板上的薄膜晶体管电路为多层结构，需要通过过孔连接不同层的电路，实际生产中经常由于过孔的边界斜坡的坡度(profile)较大，导致ITO(氧化铟锡)电极层沉积时发生断路(step open)，从而引发各种显示问题，产品良率大幅下降，生产成本随之升高。
通过改善过孔边缘的曝光量可在一定程度上降低过孔的坡度角，但是增大曝光剂量所形成的过孔的CD(Critical Dimension，关键尺寸)会变大，不符合设计需求。
发明内容
本公开实施例所提供的技术方案如下：
一种掩膜板，包括：完全透光区和完全不透光区；在所述完全透光区和所述完全不透光区之间的交界位置形成有用于与掩膜形成的开口图案的边界斜坡位置相对应的能够使得光部分透过的部分透光区。
进一步的，所述部分透光区包括能够使得光透过时发生光衍射现象的光衍射结构。
进一步的，所述光衍射结构包括：
在所述完全透光区和所述完全不透光区的交界位置处，沿所述完全透光区和所述完全不透光区的交界线间隔排列的多个衍射凸块。
进一步的，相邻两个衍射凸块之间的间隙为能够使得在相邻两个衍射凸 块之间发生光衍射现象的第一预设间隙，所述第一预设间隙小于掩膜工艺所采用的曝光机的分辨率。
进一步的，所述衍射凸块的形状为三角形，多个所述衍射凸块呈锯齿状排列，且从靠近所述完全透光区一侧到靠近所述完全不透光区的一侧的方向上，相邻两个衍射凸块之间的距离逐渐减小。
进一步的，所述衍射凸块与所述掩膜板的完全不透光区采用的材料相同，并连接为一体结构。
进一步的，所述光衍射结构包括衍射遮光环，所述衍射遮光环环绕所述完全透光区和所述完全不透光区的交界线设置，并与所述完全不透光区的边缘之间具有第二预设间隙。
进一步的，所述第二预设间隙能够使得光透过时发生光衍射现象，且所述第二预设间隙小于掩膜工艺所采用的曝光机的分辨率。
进一步的，所述衍射遮光环为与所述掩膜板的完全不透光区采用相同的材料形成的完全不透光的矩形或圆形环结构。
进一步的，所述部分透光结构包括：在所述完全透光区和所述完全不透光区的交界位置处设置的半透光膜。
附图说明
图1为相关技术中的掩膜板形成过孔的示意图；
图2为本公开一实施例中提供的掩膜板形成过孔的示意图；
图3为图2中掩膜板的俯视图；
图4为本公开一实施例中提供的掩膜板形成过孔的示意图；
图5为图4中掩膜板的俯视图；
图6为本公开一实施例中提供的掩膜板形成过孔的示意图；
图7为图6中掩膜板的俯视图；
图8为本公开一实施例中提供的掩膜板的俯视图。
具体实施方式
为使本公开实施例的目的、技术方案和优点更加清楚，下面将结合本公 开实施例的附图，对本公开实施例的技术方案进行清楚、完整地描述。显然，所描述的实施例是本公开的一部分实施例，而不是全部的实施例。基于所描述的本公开的实施例，本领域普通技术人员所获得的所有其他实施例，都属于本公开保护的范围。
图1所示为相关技术中用于形成过孔的掩膜板的结构示意图。如图1所示，相关技术中，主要是通过激光在掩膜板1上开了一个开口，形成透光区2。正常曝光时，由于掩膜板1的透光区2透过光的能量密度呈正态分布形式，即中间密度大而边缘密度小，因此，与透光区2的中间区域对应的光刻胶(PR胶)3会完全曝光，而与透光区2的边缘区域对应的光刻胶(PR胶)3会部分曝光，因而会形成一个类似锥形平台的过孔，过孔的边缘的倒角即为坡度角α。
根据公式tanα＝2T/(D1-D2)，在PR胶厚度T不变的情况下，只有适当增大曝光剂量(dose)，透过光能量密度曲线变扁平，才能减小过孔的边缘坡度角，但是增大曝光剂量所形成的过孔的CD(Critical Dimension，关键尺寸)会变大，不符合设计需求。
为了解决上述问题，本公开实施例中提供了一种掩膜板，可以使得利用该掩膜板形成的开口图案(如：过孔等)，在不变更原产品设计的开口图案的关键尺寸(Critical Dimension，CD)的基础上，对掩膜形成的开口图案的边界位置处的斜坡形状(profile)进行改良，有效减小开口图案的边界斜坡坡度角，从而增大开口图案刻蚀设备管控(margin)，降低上层ITO层发生不良，防止出现各种相关产品问题，提高良率。
如图2至7所示，本公开实施例所提供的掩膜板包括：完全透光区100、完全不透光区200、以及位于所述完全透光区100和所述完全不透光区200之间的交界位置处并用于与掩膜形成的开口图案的边界斜坡11位置相对应的、能够使得光部分透过的部分透光区。
本公开所提供的掩膜板，在完全透光区100和完全不透光区200的边界位置处设置部分透光区，由于所述部分透光区可以使得部分光透光，可以减弱透过的光能量，从而，由于透过光经部分透光区后能量被削弱，使得位于所形成的开口图案(如图中所示的过孔10)的边界位置处的光刻胶20部分曝光，与相关技术相比，可以减小过孔10的边界斜坡11坡度角，从而在不 变更原产品设计的开口图案CD的基础上，通过对开口图案的边界位置处的斜坡11形状(profile)进行改良，以降低开口图案边缘曝光能量，从而提高开口图案刻蚀设备管控(margin)，降低上层ITO层发生不良，防止出现各种相关产品问题，提高良率。
其中，需要说明的是，光刻胶20可以是正性光刻胶，也可以是负性光刻胶。当光刻胶20为正性光刻胶时，完全透光区100则用于掩膜形成过孔10；当光刻胶20为负性光刻胶时，则完全不透光区200用于掩膜形成过孔10。
还需要说明的是，所述开口图案可以包括过孔或其他开口图案。
以下均以光刻胶20为正性光刻胶、开口图案为过孔为例来对本公开进行详细的说明。
所述部分透光区可以是能够使得光透过时发生光衍射现象的光衍射结构，掩膜板上的完全透光区100的尺寸较图1所示的相关技术中掩膜板的完全透光区2的尺寸可以略偏大(如图2中D3的尺寸略大于图1中D1尺寸)，曝光时，适当增强曝光能量(dose)，通过部分透光区的光衍射结构，使得透过部分透光区的光发生光衍射现象，光能量被削弱，使得过孔10的边界位置处的光刻胶20部分曝光，从而减小过孔10的边界斜坡11的坡度角。
此外，所述部分透光区还可以是在所述完全透光区100和所述完全不透光区200的交界位置处设置的半透光膜，掩膜板上的完全透光区100的CD尺寸较图1中所示的相关技术中掩膜板的完全透光区2的CD尺寸可以略偏大，曝光时，适当增强曝光能量(dose)，通过部分透光区的半透光膜时，光能量被削弱，使得过孔10的边界位置处的光刻胶20部分曝光，从而减小过孔10的边界斜坡11坡度角。
当然可以理解的是，在实际应用中，所述部分透光区还可以是通过其他方式来使得部分光透光，在此不进行局限。
具体地，本公开的实施例中还提供了以下三种可选的实施方式。
图2和图3所示为本公开所提供的一种实施方式的结构示意图。
如图2和图3所示，所述掩膜板包括：完全透光区100、完全不透光区200、以及位于所述完全透光区100和所述完全不透光区200之间的交界位置处并用于与掩膜形成的过孔10的边界斜坡11位置相对应的能够使得光部分 透过的部分透光区。
其中，所述部分透光区采用光衍射结构。所述光衍射结构包括：在所述完全透光区100和所述完全不透光区200的交界位置处，沿所述完全透光区100和所述完全不透光区200的交界线间隔排列的多个衍射凸块300。
可选的，相邻两个衍射凸块300之间的间隙为能够使得在相邻两个衍射凸块300之间发生光衍射现象的第一预设间隙，所述第一预设间隙小于掩膜工艺所采用的曝光机的分辨率。第一预设间隙也可称为第一间隙。
采用上述方案，衍射凸块300之间的间隙小于曝光机分辨率，由于光衍射作用，这样在衍射凸块300下面有一定的透光度，又不会完全解析光刻胶20，从而会在过孔10的边界处形成的斜坡11较为平缓。
在本实施例中，可选的，如图3所示，所述衍射凸块300的形状为三角形，多个所述衍射凸块300呈锯齿状排列，且从靠近所述完全透光区100一侧到靠近所述完全不透光区200的一侧的方向上，相邻两个衍射凸块300之间的距离逐渐减小。
采用上述方案，通过将掩膜板上的完全透光区100与完全不透光区200的边界设计成锯齿状结构即锯齿状的光衍射结构，透射光经过锯齿状结构时发生衍射，锯齿状结构附近的光能量被减弱，从而使过孔10边缘的光刻胶20部分曝光，达到减小过孔10的边界斜坡11坡度角的效果。
需要说明的是，在其他实施例中，所述衍射凸块300还可以是其他形状，例如：矩形等，在此不对所述衍射凸块300的具体形状来进行限定。
此外，在本实施例中，可选的，如图3所示，所述衍射凸块300与所述掩膜板的完全不透光区200采用的材料相同，并连接为一体结构。
采用上述方案，所述衍射凸块300可以与掩膜板的完全不透光区200一体成型，制作工艺简单。
需要说明的是，在本公开的其他实施例中，根据实际需求，所述衍射凸块300也可以是与所述掩膜板的完全不透光区200的材料不同，例如：所述衍射凸块300可以是采用半透光材料制成。
图4和图5所示为本公开所提供的另一种实施方式的结构示意图。
如图4和图5所示，所述掩膜板包括：完全透光区100、完全不透光区 200、以及位于所述完全透光区100和所述完全不透光区200之间的交界位置处并用于与掩膜形成的过孔10的边界斜坡11位置相对应的能够使得光部分透过的部分透光区。
其中，所述部分透光区采用光衍射结构，所述光衍射结构包括：衍射遮光环500。所述衍射遮光环500环绕所述完全透光区100和所述完全不透光区200的交界线设置，并与所述完全不透光区200的边缘之间具有第二预设间隙501。可选的，所述第二预设间隙501能够使得光透过时发生光衍射现象，且所述第二预设间隙501小于掩膜工艺所采用的曝光机的分辨率。第二预设间隙也可称为第二间隙。
在一实施例中，如图8所示，衍射遮光环500与完全不透光区200之间可通过至少一个连接块505连接在一起。
采用上述方案，通过将掩膜板上的完全透光区100与完全不透光区200的边界设计一圈衍射遮光环500，衍射遮光环500与完全不透光区200之间的间隙可以使得光透过时发生光衍射现象，使得光能量被减弱，从而使过孔10边缘的光刻胶20部分曝光，达到减小过孔10的边界斜坡11坡度角的效果。
需要说明的是，在其他实施例中，所述衍射遮光环500上还可以再单独设计一圈缝隙506(如图8所示)，且该缝隙506能够使得光透过时发生光衍射现象，缝隙宽度小于掩膜工艺所采用的曝光机的分辨率。
此外，在本实施例中，可选的，如图5所示，所述衍射遮光环500为与所述掩膜板的完全不透光区200采用相同的材料形成的完全不透光的矩形或圆形环结构。
采用上述方案，所述衍射遮光环500可以是掩膜板的完全不透光区200材料相同，在制作时，通过在掩膜板上过孔10内侧对应的位置画一圈缝隙(slit pattern)来形成所述衍射遮光环500，制作工艺简单。
需要说明的是，在本公开的其他实施例中，根据实际需求，所述衍射遮光环500也可以是与所述掩膜板的完全不透光区200的材料不同，例如：所述衍射遮光环500可以是采用半透光材料制成。
图6和图7所示为本公开所提供的另一种实施方式的结构示意图。
如图6和图7所示，所述掩膜板包括：完全透光区100和完全不透光区200；在所述完全透光区100和所述完全不透光区200之间的交界位置形成有用于与掩膜形成的过孔10的边界斜坡11位置相对应的能够使得光部分透过的部分透光区；其中，所述部分透光区采用半透光膜600。
采用上述方案，通过将掩膜板上的完全透光区100与完全不透光区200的边界增加一圈半透光膜600，透射光经过半透光膜600的光能量降低，从而使过孔10边缘的光刻胶20部分曝光，达到减小过孔10的边界斜坡11坡度角的效果。其中需要说明的是，在此所述半透光膜600的透光率并不进行局限，可以是1/2透光膜、1/3透光膜或2/3透光膜等。
以上所述仅是本公开的可选实施方式，应当指出，对于本技术领域的普通技术人员来说，在不脱离本公开技术原理的前提下，还可以做出若干改进和替换，这些改进和替换也应视为本公开的保护范围。

Claims (13)

  1. 一种掩膜板包括：
    完全透光区，
    完全不透光区，及
    位于所述完全透光区和所述完全不透光区之间的交界位置处的部分透光区。
  2. 根据权利要求1所述的掩膜板，其中，所述部分透光区包括光衍射结构。
  3. 根据权利要求2所述的掩膜板，其中，所述光衍射结构包括：在所述完全透光区和所述完全不透光区的交界位置处沿所述完全透光区和所述完全不透光区的交界线间隔排列的多个衍射凸块。
  4. 根据权利要求3所述的掩膜板，其中，相邻两个衍射凸块之间的间隙为能够使得在相邻两个衍射凸块之间发生光衍射现象的第一预设间隙，所述第一预设间隙小于掩膜工艺所采用的曝光机的分辨率。
  5. 根据权利要求3所述的掩膜板，其中，所述衍射凸块的形状为三角形，多个所述衍射凸块呈锯齿状排列；从靠近所述完全透光区一侧到靠近所述完全不透光区的一侧的方向上，相邻两个衍射凸块之间的距离逐渐减小。
  6. 根据权利要求3所述的掩膜板，其中，所述衍射凸块与所述掩膜板的完全不透光区采用的材料相同，并连接为一体结构。
  7. 根据权利要求3所述的掩膜板，其中，所述衍射凸块采用半透光材料制成。
  8. 根据权利要求2所述的掩膜板，其中，所述光衍射结构包括衍射遮光环，所述衍射遮光环环绕所述完全透光区和所述完全不透光区的交界线设置，并与所述完全不透光区的边缘之间具有第二预设间隙。
  9. 根据权利要求8所述的掩膜板，其中，所述第二预设间隙能够使得在所述衍射遮光环和所述完全不透光区之间发生光衍射现象，且所述第二预设间隙小于掩膜工艺所采用的曝光机的分辨率。
  10. 根据权利要求8所述的掩膜板，其中，所述衍射遮光环为与所述完 全不透光区采用相同的材料形成的完全不透光的环状结构。
  11. 根据权利要求8所述的掩膜板，其中，所述衍射遮光环采用半透光材料制成。
  12. 根据权利要求8所述的掩膜板，其中，所述衍射遮光环上具有环绕所述完全透光区和所述完全不透光区的交界线设置的一圈缝隙，所述衍射遮光环上的缝隙小于掩膜工艺所采用的曝光机的分辨率。
  13. 根据权利要求1所述的掩膜板，其中，所述部分透光结构包括：在所述完全透光区和所述完全不透光区的交界位置处设置的半透光膜。
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