WO2021185003A1 - 压力感应式结构及电子产品 - Google Patents

压力感应式结构及电子产品 Download PDF

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Publication number
WO2021185003A1
WO2021185003A1 PCT/CN2021/075915 CN2021075915W WO2021185003A1 WO 2021185003 A1 WO2021185003 A1 WO 2021185003A1 CN 2021075915 W CN2021075915 W CN 2021075915W WO 2021185003 A1 WO2021185003 A1 WO 2021185003A1
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WIPO (PCT)
Prior art keywords
pressure
sensitive structure
strain
substrate
sensing
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PCT/CN2021/075915
Other languages
English (en)
French (fr)
Inventor
黄拓夏
余锦波
Original Assignee
深圳纽迪瑞科技开发有限公司
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Application filed by 深圳纽迪瑞科技开发有限公司 filed Critical 深圳纽迪瑞科技开发有限公司
Priority to CN202180018324.6A priority Critical patent/CN115210682A/zh
Priority to US17/912,832 priority patent/US20230144931A1/en
Publication of WO2021185003A1 publication Critical patent/WO2021185003A1/zh

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L1/00—Measuring force or stress, in general
    • G01L1/20—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress
    • G01L1/22—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges
    • G01L1/2287—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges constructional details of the strain gauges
    • G01L1/2293—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges constructional details of the strain gauges of the semi-conductor type
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L1/00—Measuring force or stress, in general
    • G01L1/14—Measuring force or stress, in general by measuring variations in capacitance or inductance of electrical elements, e.g. by measuring variations of frequency of electrical oscillators
    • G01L1/142—Measuring force or stress, in general by measuring variations in capacitance or inductance of electrical elements, e.g. by measuring variations of frequency of electrical oscillators using capacitors
    • G01L1/148—Measuring force or stress, in general by measuring variations in capacitance or inductance of electrical elements, e.g. by measuring variations of frequency of electrical oscillators using capacitors using semiconductive material, e.g. silicon
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L1/00—Measuring force or stress, in general
    • G01L1/20—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress
    • G01L1/22—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges
    • G01L1/225—Measuring circuits therefor
    • G01L1/2262—Measuring circuits therefor involving simple electrical bridges
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L1/00—Measuring force or stress, in general
    • G01L1/20—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress
    • G01L1/22—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges
    • G01L1/2268—Arrangements for correcting or for compensating unwanted effects
    • G01L1/2281—Arrangements for correcting or for compensating unwanted effects for temperature variations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/20—Resistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/8605—Resistors with PN junctions
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L1/00—Measuring force or stress, in general
    • G01L1/18—Measuring force or stress, in general using properties of piezo-resistive materials, i.e. materials of which the ohmic resistance varies according to changes in magnitude or direction of force applied to the material
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
    • G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
    • G06F2203/04105—Pressure sensors for measuring the pressure or force exerted on the touch surface without providing the touch position
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means

Definitions

  • This application belongs to the field of pressure-sensitive structures, and particularly relates to pressure-sensitive structures and electronic products.
  • the purpose of this application is to provide a pressure-sensitive structure, which aims to solve the technical problem that the existing touch structure occupies a large product space.
  • a pressure-sensitive structure including:
  • a substrate having a first mounting surface and a second mounting surface opposite to each other;
  • the first elastic carrier is provided on the first mounting surface
  • At least one semiconductor thin film wherein at least one of the semiconductor thin films is located on the first elastic carrier, and at least one of the semiconductor thin films is integrated with a signal measuring circuit, and the signal measuring circuit is used to detect the amount of bending deformation of the substrate Output identifiable electrical signals.
  • an electronic product including a panel and the above-mentioned pressure-sensitive structure, and the pressure-sensitive structure is attached to the inner side of the panel.
  • an electronic product including a side frame and the above-mentioned pressure-sensitive structure, and the pressure-sensitive structure is attached to the inner side of the side frame.
  • the beneficial effect of the pressure-sensitive structure provided by the first aspect of the embodiments of the present application is that: in the pressure-sensitive structure, a first elastic carrier is provided on the first mounting surface of the substrate, and a semiconductor film is provided on the first elastic carrier.
  • the first elastic carrier follows the bending deformation of the substrate, and the substrate amplifies the strain signal.
  • the semiconductor thin film can detect the bending deformation of the substrate, and the semiconductor thin film signal integrated measuring circuit outputs an identifiable electrical signal.
  • the pressure-sensitive structure integrates the detection element and the circuit in the semiconductor film, has a smaller volume, a small space occupation, and is a sensor structure with high precision, high reliability, and high sensitivity.
  • the pressure-sensitive structure can be used for the pressure button of any electronic product of plastic or metal by detecting the strain, and can detect the pressing force at the same time.
  • the pressure-sensitive structure is smaller, more sensitive, and convenient to use. It can be used in electronic products that require miniaturization and higher integration, and can achieve Mass production.
  • Both of the above-mentioned electronic products can avoid the discontinuous appearance, difficulty in waterproof and dustproof, short life span, and difficulty in installation caused by traditional mechanical keys.
  • the beneficial effect of the electronic product provided by the second aspect of the embodiments of the present application is that the pressure-sensitive structure is attached to the inner side of the electronic product panel.
  • the panel When the panel is pressed, the panel will bend and deform, and the substrate will bend and deform.
  • the semiconductor film The bending deformation is detected, and an identifiable electrical signal is output by the integrated signal measurement circuit.
  • the pressing pressure and position By detecting the strain of the panel, the pressing pressure and position can be detected.
  • the beneficial effect of the electronic product provided by the third aspect of the embodiments of the present application is that the pressure-sensitive structure is attached to the side frame of the electronic product, especially the side frame of the smart phone.
  • the substrate When the side frame is pressed, the substrate will be bent and deformed following the side frame.
  • the semiconductor film detects the bending deformation, and the integrated signal measurement circuit outputs identifiable electrical signals to identify the pressing position and strength, and realize the side touch button function. There is no need to separately slot the side frame of the electronic product to make the appearance simple Generous.
  • Fig. 1 is a schematic structural diagram of a pressure-sensitive structure provided by a first embodiment of the present application
  • 2 is a diagram of the relationship between the thickness of the substrate obtained by finite element simulation and the output signal of the signal measurement circuit;
  • Fig. 3 is a strain simulation diagram of the first elastic carrier obtained by finite element simulation
  • FIG. 4 is a schematic structural diagram of a substrate used in the pressure-sensitive structure of FIG. 1;
  • FIG. 5 is a schematic diagram of a signal measurement circuit used in the pressure-sensitive structure of FIG. 1;
  • FIG. 6 is a schematic diagram of a signal measurement circuit used in the pressure-sensitive structure of FIG. 1;
  • FIG. 7 is a schematic diagram of a signal measurement circuit used in the pressure-sensitive structure of FIG. 1;
  • FIG. 8 is a schematic diagram of a signal measurement circuit used in the pressure-sensitive structure of FIG. 1;
  • FIG. 9 is a schematic diagram of a signal measurement circuit used in the pressure-sensitive structure of FIG. 1;
  • FIG. 10 is a schematic diagram of a signal measurement circuit used in the pressure-sensitive structure of FIG. 1;
  • Fig. 11 is a schematic structural diagram of the pressure-sensitive structure of Fig. 1 applied to a panel when it is not pressed;
  • Fig. 12 is a structural schematic diagram of the pressure-sensitive structure of Fig. 4 applied to a panel when pressed;
  • Fig. 13 is a schematic structural diagram of the pressure-sensitive structure of Fig. 1 applied to a side frame.
  • the temperature coefficient of resistance represents the relative change in the resistance value when the temperature of the resistance changes by 1°C, and the unit is ppm/°C (that is, 10 ⁇ -6/°C).
  • the gauge factor (GF) of the resistance strain gauge represents the relative change in the resistance of the strain gauge caused by the unit strain of the resistance strain gauge.
  • dR/R is the resistance change rate
  • ⁇ is the mechanical strain of the material
  • the effective gauge factor (GF_eff) is the ratio of the actual resistance change to the ideal strain assuming that the semiconductor film has no effect on the structural strength.
  • the deformation of Si is generally smaller than that of the carrier structure.
  • the strain deformation at the film becomes smaller, and the corresponding resistance change decreases, that is, the effective GF decreases as the film thickness increases.
  • the pressure-sensitive structure 100 provided by the first embodiment of the present application includes a substrate 10 having a first mounting surface 10a and a second mounting surface 10b opposite to each other; An elastic carrier 20; and at least one semiconductor film 40, wherein at least one semiconductor film 40 is located on the first elastic carrier 20, and at least one semiconductor film 40 is integrated with a signal measuring circuit, the signal measuring circuit is used to detect the bending deformation of the substrate 10
  • the quantity output can be recognized electric signal.
  • a first elastic carrier 20 is provided on the first mounting surface 10a of the substrate 10, and a semiconductor film 40 is provided on the first elastic carrier 20.
  • the first elastic carrier 20 follows the substrate. 10 Bending deformation, the substrate 10 amplifies the strain signal, wherein the signal measurement circuit can detect the bending deformation of the substrate 10, and the signal measurement circuit outputs an identifiable electrical signal.
  • the pressure-sensitive structure 100 is a sensor structure with small volume, high precision, high reliability, and high sensitivity.
  • the pressure-sensitive structure 100 can be used for the pressure button of any electronic product of plastic or metal by detecting the strain, and can detect the pressing force at the same time.
  • the pressure-sensitive structure 100 is more sensitive and convenient to use, can be used in electronic products with higher structural strength, and can be mass-produced.
  • the substrate 10 can be made of materials with elastic deformation characteristics, such as metal, glass, fiberglass board, plastic or other materials.
  • the substrate 10 can increase the thickness of the overall structure. Under the same deformation of the thin-walled part with the same curvature radius, the strain of the semiconductor film 40 is greater , The corresponding change value ⁇ R is larger, so that a larger electrical signal can be obtained, and the pressure-sensitive structure 100 is more sensitive to strain.
  • the output signal of the signal measuring circuit in the semiconductor thin film 40 changes in proportion to the thickness of the substrate 10, that is, the thicker the substrate 10, the more sensitive the pressure-sensitive structure 100 is.
  • the second mounting surface 10b is provided with a second elastic carrier 30, the number of semiconductor films 40 is at least two, of which at least one semiconductor film 40 is located on the first elastic carrier 20, and the other semiconductor film 40 is located on the second elastic carrier 30 Above, the semiconductor thin film 40 is adjacently distributed.
  • the two mounting surfaces of the substrate 10 are respectively provided with a first elastic carrier 20 and a second elastic carrier 30.
  • the first elastic carrier 20 and the second elastic carrier 30 are both provided with a semiconductor film 40.
  • the first elastic carrier 20 and the second elastic carrier 30 are The elastic carrier 20 and the second elastic carrier 30 follow the bending deformation of the substrate 10, and the substrate 10 amplifies the strain signal.
  • the strain sensing resistor can detect the bending deformation of the substrate 10, and the signal measuring circuit in the semiconductor film 40 outputs an identifiable electrical signal .
  • the first elastic carrier 20 and the second elastic carrier 30 have the characteristics of elastic deformation and are used to mount semiconductor films 40, such as polyimide (PI), flexible circuit boards, fiberglass boards, and polyethylene terephthalate. Polyethylene glycol terephthalate (PET), metal, plastic or other materials.
  • semiconductor films 40 such as polyimide (PI), flexible circuit boards, fiberglass boards, and polyethylene terephthalate. Polyethylene glycol terephthalate (PET), metal, plastic or other materials.
  • a strain concentration groove 11 is provided on the substrate 10, and the semiconductor thin film 40 is arranged close to the strain concentration groove 11.
  • the semiconductor thin film 40 is arranged close to the strain concentration groove 11, which can make the strain more concentrated on the elastic carrier and close to the strain concentration groove 11, and enables the semiconductor thin film 40 to detect the strain in the strain concentration groove 11 area, thereby Obtaining a larger strain signal makes the pressure-sensitive structure 100 more sensitive.
  • the substrate is provided with 8 strain concentration grooves, and the finite element simulation analysis is performed on the first elastic carrier 20. As shown in FIG. 4, the strain of the first elastic carrier 20 is concentrated on the strain of the substrate. At the concentrated groove, the semiconductor thin film 40 can detect a very large strain signal, so that the pressure-sensitive structure 100 has high precision, high reliability, and high sensitivity.
  • the situation of the second elastic carrier 30 is similar to that of the first elastic carrier 20.
  • the strain concentration groove 11 is a through groove extending in a direction perpendicular to the first mounting surface 10a; or, as shown in FIG. 4(b), the strain concentration groove 11 is inclined A through groove extending in the direction of the first mounting surface 10a; or, as shown in FIG. 4(c), the strain concentration groove 11 is a through groove with a predetermined shape in longitudinal section; the predetermined shape can be a funnel longitudinal section, a circular shape, or the like.
  • the strain concentration groove 11 is a blind groove having a predetermined shape in longitudinal section. The blind groove refers to a groove that does not penetrate through the substrate 10.
  • the predetermined shape may be a funnel longitudinal section, a circular shape, or the like.
  • the semiconductor film 40 is arranged close to the strain concentration groove 11 and is used to amplify the strain signal of the elastic carrier to realize pressure sensing. Or, as shown in FIG. 4(e), the substrate 10 is an integral plate, the bending deformation of the substrate 10 is transmitted to the first elastic carrier 20 and the second elastic carrier 30, and the semiconductor film 40 can detect the bending deformation of the substrate 10. And the signal measuring circuit in the semiconductor film 40 outputs a recognizable electrical signal.
  • the pressure-sensitive structure 100 can be adapted to different sensitivity requirements under different occasions by changing the thickness of the substrate 10 and changing the shape of the strain concentration groove 11.
  • the semiconductor film 40 includes a silicon (Si) film, a germanium (Ge) film, a gallium arsenide (GaAs) film, a gallium nitride (GaN) film, a silicon carbide (SiC) film, a zinc sulfide (ZnS) film, or a zinc oxide ( ZnO) at least one of the thin films.
  • a silicon film has a very high gauge factor, but its hardness is too large. When force or strain is transmitted to it, the signal output will be greatly reduced. Thinning it can reduce its stiffness, increase its response rate to force or strain, and can be directly attached to the surface of materials such as printed circuit boards or flexible circuit boards for force or strain measurement.
  • the thickness of the thickest part of the semiconductor thin film 40 is n ⁇ 70um, or n ⁇ 50um, or n ⁇ 30um, or n ⁇ 25um, or n ⁇ 20um, or n ⁇ 15um, or n ⁇ 10um.
  • a signal measurement circuit in the semiconductor film 40 has a sensing component, and the sensing component can be used to sense parameters such as pressure and temperature.
  • the sensing component includes a strain sensing resistor, a single resistance measurement circuit, which can measure the resistance of a single resistance as a signal output, for example, resistance measurement with ohmmeter, resistance measurement with voltammetry, resistance measurement with RC circuit , RC oscillator circuit resistance measurement, RLC parallel resonant circuit resistance measurement methods, etc., according to needs.
  • Resistance measurement by ohmmeter and resistance measurement by voltammetry are methods of direct measurement of resistance, and the corresponding resistance measurement circuit is a conventional technology.
  • the signal measurement circuit is designed as follows:
  • the signal measurement circuit includes an RC circuit composed of a strain sensing resistor R and a fixed value capacitor C in series or in parallel. Use the RC circuit to measure the resistance.
  • the signal measurement circuit includes a strain-sensing resistor R, a fixed-value capacitor C and an amplifier. Combining the RC series and parallel frequency selection network with the amplifier, the amplifier can be an integrated operational amplifier.
  • the RC series-parallel frequency selection network is connected between the output terminal and the non-inverting input terminal of the operational amplifier to form positive feedback, and R F and R'are connected between the output terminal and the inverting input terminal of the operational amplifier to form negative feedback.
  • the positive feedback circuit and the negative feedback circuit constitute a Wien bridge oscillation circuit, and the input and output ends of the operational amplifier are respectively connected across two diagonals of the bridge.
  • the output frequency of the Wien bridge oscillation circuit is:
  • the frequency f 0 is very sensitive to changes in the resistance value R of the resistor. According to the above formula, if the capacitance C of the capacitor is known, the resistance value R can be inversely calculated from the measured frequency f 0.
  • the signal measurement circuit includes a strain sensing resistor R, a fixed value inductance L and a fixed value capacitor C.
  • the RLC resonant circuit is a circuit in which the RL series circuit and the capacitor C are connected in parallel.
  • the angular frequency of the RLC resonant circuit is:
  • the inductance L of the inductor and the capacitance C of the capacitor are known, and the resistance value R can be inversely calculated from the measured angular frequency ⁇ .
  • the sensing component includes two resistors, such as a voltage divider circuit formed by a strain sensing resistor and a reference resistor in series; or a voltage divider circuit formed by two strain sensing resistors in series; or a strain sensing resistor and A shunt circuit formed by a parallel reference resistor, or a shunt circuit formed by two strain sensing resistors in parallel.
  • resistors such as a voltage divider circuit formed by a strain sensing resistor and a reference resistor in series; or a voltage divider circuit formed by two strain sensing resistors in series; or a strain sensing resistor and A shunt circuit formed by a parallel reference resistor, or a shunt circuit formed by two strain sensing resistors in parallel.
  • the signal measurement circuit when the signal measurement circuit includes a series voltage divider circuit or a parallel shunt circuit composed of two strain sensing resistors, one of the strain sensing resistors is a positive strain coefficient sensing resistor, and the other is a negative strain coefficient sensing resistor; or two Each induction resistor has a different gauge factor.
  • the signal measurement circuit is designed as follows:
  • Two resistors form a series voltage divider circuit.
  • a constant voltage source is used.
  • the input voltage U i is applied to both ends of V+ and V- to detect the potential at Vo or measure the output voltage U o between Vo and ground.
  • the sensing component includes four resistors R1, R2, R3, and R4, which can be a Wheatstone bridge including a strain sensing resistor electrically connected to three reference resistors; or, including two strain sensing resistors A half-bridge circuit formed by electrical connection with two reference resistors; or, a full bridge circuit formed by electrical connection with four strain-sensing resistors; or, a bridge circuit formed by electrical connection with three strain-sensing resistors and one reference resistor.
  • resistors R1, R2, R3, and R4 can be a Wheatstone bridge including a strain sensing resistor electrically connected to three reference resistors; or, including two strain sensing resistors A half-bridge circuit formed by electrical connection with two reference resistors; or, a full bridge circuit formed by electrical connection with four strain-sensing resistors; or, a bridge circuit formed by electrical connection with three strain-sensing resistors and one reference resistor.
  • two of the strain sensing resistors are positive gage-coefficient sensing resistors, and the other two are negative gage-coefficient sensing resistors; or the four resistors have different gage coefficients.
  • the signal measurement circuit is designed as follows:
  • U i is the Vcc voltage
  • U 0 is the voltage difference between Vm+ and Vm-.
  • U i is the Vcc voltage
  • U 0 is the voltage difference between Vm+ and Vm-.
  • U i is the Vcc voltage
  • U 0 is the voltage difference between Vm+ and Vm-.
  • R1, R4 are positive gauge coefficient induction resistance, R2, R3 are negative gauge factor induction resistance; or R1, R4 are negative gauge factor induction resistance, R2, R3 are positive gauge factor induction resistance; or R1, R4 are positive (or negative) ) Gauge factor induction resistance, R2 and R3 are zero gauge factor induction resistance.
  • a temperature detecting element may be provided on the semiconductor thin film 40, and the sensing part further includes a temperature detecting element, the temperature detecting element is used for the temperature of the location and outputting a temperature detection signal.
  • the temperature detection element can be used to measure the local temperature, and the temperature information can also be used to compensate the output signal for the structural expansion caused by the temperature.
  • the semiconductor thin film can output both the deformation signal and the temperature signal.
  • the signal measurement circuit further includes an amplifying circuit connected to the sensing component and used for amplifying the signal output by the sensing component. Further, the signal measurement circuit further includes a compensation circuit, the input terminal of which is coupled with the output terminal of the amplifying circuit, and is used to compensate the output voltage imbalance of the sensing component according to the signal output by the amplifying circuit.
  • the pressure-sensitive structure 100 is similarly attached to the inside of the panel, the inside of the side frame, or the inside of other thin-walled parts. Taking the pressure-sensitive structure 100 attached to the panel 201 through the glue 203 and the signal measuring circuit in the semiconductor film 40 includes a full bridge formed by electrical connection of four strain-sensing resistors R1, R2, R3, and R4 as an example, the pressure-sensitive structure will be described. Compared with other existing sensor structures, the structure 100 is less dependent on the colloid 203, and can eliminate errors caused by the difference in adhesion of the colloid 203, so that the measurement is accurate and reliable.
  • the panel 201 When the panel 201 is pressed, the panel 201 will produce downward bending deformation, and the pressure-sensitive structure 100 will follow the panel 201 through the colloid 203 to produce deformation, resulting in the deformation of the strain sensing resistors R1, R2, R3, and R4, which in turn causes R1, The resistance of R2, R3, and R4 changes. Since the panel 201 is bent downward and deformed, the lower surface of the panel 201 is stretched and deformed. For the selected colloid 203, since the horizontal dimension is much larger than the vertical dimension, the ratio of the width to the thickness is usually at least 50:1, and the amount of deformation of the colloid 203 in the longitudinal direction is much smaller than the amount of lateral deformation.
  • the semiconductor film 40 on the first elastic carrier 20 is located on the side of the first elastic carrier 20 facing the substrate 10, and the semiconductor film 40 on the first elastic carrier 20 is located on the side of the first elastic carrier 20 away from the substrate 10.
  • One side. At least one of the above two schemes can be selected.
  • the semiconductor film 40 on the second elastic carrier 30 is located on the side of the second elastic carrier 30 facing the substrate 10, and the semiconductor film 40 on the second elastic carrier 30 is located on the side of the second elastic carrier 30 away from the substrate 10. At least one of the above two schemes can be selected.
  • the semiconductor film 40 can be distributed on one or both sides of the corresponding elastic carrier, and the semiconductor film 40 can be distributed on either side of the corresponding elastic carrier to form a signal measurement circuit in the corresponding semiconductor film 4040.
  • the number of semiconductor thin films 40 is at least two, and the semiconductor thin films 40 are distributed on the substrate 10 in an array. This solution can perform pressure sensing on multiple positions, and can also use algorithms to realize gesture recognition and sliding functions that cannot be achieved by mechanical buttons.
  • two of the strain sensing resistors in the signal measurement circuit in a semiconductor film 40 coincide one to one; or, two of the strain sensing resistors in the signal measurement circuit in a semiconductor film 40 are staggered.
  • the semiconductor thin film 40 can be distributed in the vicinity of the strain concentration groove 11 in whole or in part as required.
  • the electronic product provided by the first embodiment of the present application includes a panel 201 and the pressure-sensitive structure 100 described above.
  • the pressure-sensitive structure 100 is attached to the inner side of the panel 201.
  • the pressure-sensitive structure 100 is attached to the inner side of the electronic product panel 201.
  • the panel 201 When the panel 201 is pressed, the panel 201 will bend and deform and drive the substrate 10 to bend and deform.
  • the strain sensing resistor detects the bending and the deformation is detected by the semiconductor film 40.
  • the signal measurement circuit in the output identifiable electrical signal. By detecting the strain of the panel 201, the pressing pressure and position are detected.
  • Electronic products can avoid the discontinuity in appearance, difficulty in waterproof and dustproof, short life span, and difficulty in installation caused by traditional mechanical keys.
  • the panel 201 may be a touch screen, a display, or other electronic devices with a rigid structure.
  • By connecting the pressure-sensitive structure 100 with the panel 201 it is possible to accurately identify the touch position while accurately identifying the size of the touch pressure, which expands the application space for electronic devices in product applications, human-computer interaction, and consumer experience.
  • the user can directly obtain the precise pressure level and quantity by touching the touch screen, display or electronic device. After the correction, the accurate pressure value of pressing can be obtained.
  • the pressure-sensitive structure 100 and the panel 201 are connected by glue 203, welding or other mechanical connection methods.
  • glue 203 When the colloid 203 is used, it can be used immediately, which is convenient to use, simplifies the assembly process, and facilitates rework.
  • the panel 201 When the user's finger presses on the panel 201, the panel 201 will be bent and deformed, and the colloid 203 will drive the pressure-sensitive structure 100 to deform to obtain the user's operating position and strength to realize the pressure touch function.
  • the glue 203 is a water glue or a double-sided glue.
  • the electronic product provided by the second embodiment of the present application includes a side frame 202 and the pressure-sensitive structure 100 described above.
  • the pressure-sensitive structure 100 is attached to the inner side of the side frame 202.
  • the pressure-sensitive structure 100 is attached to the side frame 202 of the electronic product, especially the side frame 202 of the smartphone.
  • the substrate 10 When the side frame 202 is pressed, the substrate 10 will follow the side frame 202 to produce bending deformation, the strain sensing resistor detects the bending deformation, and The signal measurement circuit in the semiconductor film 40 outputs identifiable electrical signals to identify the pressing position and strength, and realize the side touch button function.
  • the pressure-sensitive structure 100 and the side frame 202 are connected by glue 203, welding or other mechanical connection methods.
  • glue 203 is a water glue or a double-sided glue.
  • the pressure-sensitive structure 100 can also be attached to the inside of other thin-walled parts.
  • the thin-walled part When the thin-walled part is pressed, the thin-walled part will be bent and deformed and drive the substrate to bend and deform.
  • the strain sensing resistor detects the bending deformation.
  • the signal measurement circuit outputs identifiable electrical signals. By detecting the strain of thin-walled parts, the detection of pressing pressure and position can be realized.
  • the pressure-sensitive structure and the thin-walled part are connected by glue, welding or other mechanical connection methods.
  • glue welding or other mechanical connection methods.
  • colloids it is easy to use and easy to use, simplify the assembly process, and facilitate rework.
  • the colloid is water glue or double-sided glue.

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Abstract

本申请提供了一种压力感应式结构(100)和电子产品，在压力感应式结构(100)中，基板(10)第一安装面(10a)上设有第一弹性载体(20)，弹性载体上设有半导体薄膜(40)，在基板(10)变形时，弹性载体跟随基板(10)弯曲变形，基板(10)放大应变信号，半导体薄膜(40)能检测基板(10)的弯曲变形量，由半导体薄膜(40)的信号测量电路输出可识别的电信号。该压力感应式结构(100)为体积小，精度高、可靠度高、灵敏度高的传感器结构。将压力感应式结构(100)贴合在电子产品面板(201)或侧边框，电子产品能避免传统机械按键会带来的外观上不连续、防水防尘困难、寿命短、安装困难的情况。

Description

压力感应式结构及电子产品
本申请要求于2020年3月19日在美国专利局提交的、申请号为62/992,000、发明名称为“混合应变传感系统”的美国专利申请，以及于2020年8月11日在美国专利局提交的、申请号为63/064,086、发明名称为“新型混合传感系统”的美国专利申请的优先权，其全部内容通过引用结合在本申请中。
技术领域
本申请属于压力感应结构领域，尤其涉及压力感应式结构及电子产品。
背景技术
目前，随着电容屏的大范围使用，电子产品，尤其是智能手机的各个部件也开始用触摸式结构替代原有机械式结构，如手机键盘、home键等，逐渐电子智能化。然而，目前智能手机侧键由于技术和一些其它方面的原因，大部分还是使用传统的机械按键。传统机械按键存在，会带来占用产品空间大，外观上的不连续、防水防尘困难、使用寿命较短以及较难安装的缺点。
技术问题
本申请的目的在于提供一种压力感应式结构，旨在解决现有触摸式结构占用产品空间大技术问题。
技术解决方案
为解决上述技术问题，本申请实施例采用的技术方案是：
第一方面，提供了一种压力感应式结构，包括：
基板，其具有相背对的第一安装面与第二安装面；
第一弹性载体，设于所述第一安装面；以及
至少一个半导体薄膜，其中至少一个所述半导体薄膜位于所述第一弹性载体上，且至少一个所述半导体薄膜内集成有信号测量电路，所述信号测量电路用于检测所述基板的弯曲变形量输出可被识别的电信号。
第二方面，提供了一种电子产品，包括面板及上述压力感应式结构，所述压力感应式结构贴合在所述面板的内侧。
第三方面，提供了一种电子产品，包括侧边框及上述压力感应式结构，所述压力感应式结构贴合在所述侧边框的内侧。
有益效果
本申请实施例第一方面提供的压力感应式结构的有益效果在于：在压力感应式结构中，基板的第一安装面上设有第一弹性载体，第一弹性载体上设有半导体薄膜，在基板变形时， 第一弹性载体跟随基板弯曲变形，基板放大应变信号，其中半导体薄膜能检测基板的弯曲变形量，并由半导体薄膜信号所集成测量电路输出可识别的电信号。该压力感应式结构将检测元件和电路都集成在半导体薄膜内，体积更小，占用空间小，并且精度高、可靠度高、灵敏度高的传感器结构。
相对于传统的电容按键，该压力感应式结构通过检测应变，可用于塑胶或金属的任一种电子产品的压力按键，同时可检测按压力度。相比较于现有的压力电容、应变片或应变膜，该压力感应式结构体积更小，更加灵敏、使用方便，能够用于对要求小型化，集成化更高的电子产品上，并能够实现量产。
上述两种电子产品均能避免传统机械按键会带来的外观上不连续、防水防尘困难、寿命短、安装困难的情况。
本申请实施例第二方面提供的电子产品的有益效果在于：将压力感应式结构贴合在电子产品面板的内侧，在按压面板时，面板会产生弯曲变形，并带动基板产生弯曲变形，半导体薄膜检测出弯曲变形，并由所集成的信号测量电路输出可识别的电信号。通过检测面板的应变，来实现按压压力与位置的检测。
本申请实施例第三方面提供的电子产品的有益效果在于：将压力感应式结构贴合在电子产品侧边框，尤其是智能手机侧边框，在按压侧边框时，基板会跟随侧边框产生弯曲变形，半导体薄膜检测出弯曲变形，并由所集成的信号测量电路输出可识别的电信号，识别按压位置和力度，实现侧边触摸按键功能，不需要单独在电子产品侧边框开槽，使外观简洁大方。
附图说明
为了更清楚地说明本申请实施例中的技术方案，下面将对实施例或示范性技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其它的附图。
图1是本申请第一实施例提供的压力感应式结构的结构示意图；
图2是有限元模拟得到的基板厚度与信号测量电路输出信号的关系图；
图3是有限元模拟得到的第一弹性载体的应变仿真图；
图4是图1的压力感应式结构中应用的基板的结构示意图；
图5是图1的压力感应式结构中应用的信号测量电路的示意图；
图6是图1的压力感应式结构中应用的信号测量电路的示意图；
图7是图1的压力感应式结构中应用的信号测量电路的示意图；
图8是图1的压力感应式结构中应用的信号测量电路的示意图；
图9是图1的压力感应式结构中应用的信号测量电路的示意图；
图10是图1的压力感应式结构中应用的信号测量电路的示意图；
图11是图1的压力感应式结构应用于面板上在未按压时的结构示意图；
图12是图4的压力感应式结构应用于面板上在按压时的结构示意图；
图13是图1的压力感应式结构应用于侧边框的结构示意图。
本发明的实施方式
为了使本申请的目的、技术方案及优点更加清楚明白，以下结合附图及实施例，对本申请进行进一步详细说明。应当理解，此处所描述的具体实施例仅仅用以解释本申请，并不用于限定本申请。
需说明的是，当部件被称为“固定于”或“设置于”另一个部件，它可以直接在另一个部件上或者间接在该另一个部件上。当一个部件被称为是“连接于”另一个部件，它可以是直接或者间接连接至该另一个部件上。术语“上”、“下”、“左”、“右”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制，对于本领域的普通技术人员而言，可以根据具体情况理解上述术语的具体含义。术语“第一”、“第二”仅设置为便于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明技术特征的数量。“多个”的含义是两个或两个以上，除非另有明确具体的限定。为了说明本申请所述的技术方案，以下结合具体附图及实施例进行详细说明。
电阻温度系数(temperature coefficient of resistance，TCR)表示电阻当温度改变1℃时，电阻值的相对变化，单位为ppm/℃(即10^-6/℃)。电阻应变计的灵敏度系数(gauge factor，GF)表示电阻应变计的单位应变所引起的应变片电阻相对变化，其中，
Figure PCTCN2021075915-appb-000001
dR/R为电阻变化率，ε为材料的机械应变；有效灵敏度系数(Effective gauge factor，GF_eff)为实际电阻变化与假设半导体薄膜对结构强度无影响时的理想应变之比。对于特定结构，外力给定时，结构的变形确定。但贴上弹性模量较大的半导体薄膜比如硅(Si)后，一般Si的变形小于载体结构变形。且随着薄膜厚度的增大，薄膜处的应变变形越小，对应的电阻变化减小，即有效GF随着薄膜厚度增加而减小。
请参阅图1，本申请第一实施例提供的压力感应式结构100，包括基板10，其具有相背对的第一安装面10a与第二安装面10b；设于第一安装面10a的第一弹性载体20；以及至少一个半导体薄膜40，其中至少一个半导体薄膜40位于第一弹性载体20上，且至少一个 半导体薄膜40内集成有信号测量电路，信号测量电路用于检测基板10的弯曲变形量输出可被识别的电信号。
在压力感应式结构100中，基板10的第一安装面10a上设有第一弹性载体20，第一弹性载体20上设有半导体薄膜40，在基板10变形时，第一弹性载体20跟随基板10弯曲变形，基板10放大应变信号，其中信号测量电路能检测基板10的弯曲变形量，并由信号测量电路输出可识别的电信号。该压力感应式结构100为体积小、精度高、可靠度高、灵敏度高的传感器结构。
相对于传统的电容按键，该压力感应式结构100通过检测应变，可用于塑胶或金属的任一种电子产品的压力按键，同时可检测按压力度。相比较于现有的压力电容、应变片或应变膜，该压力感应式结构100更加灵敏、使用方便，能够用于对结构强度更高的电子产品上，并能够实现量产。
基板10可由具有弹性变形特性的材料制作，比如金属、玻璃、玻纤板、塑料或其他材质。在压力感应式结构100贴合于面板内侧、侧边框内侧或其它薄壁件内侧时，基板10能增加整体结构的厚度，在薄壁件曲率半径相同的变形下，半导体薄膜40的应变更大，相应变化值△R更大，从而能够获得更大的电信号，使压力感应式结构100对应变的反应更加灵敏。从理论上，半导体薄膜40中的信号测量电路的输出信号与基板10的厚度成正比例变化，即基板10越厚，压力感应式结构100越灵敏。如图2所示，通过有限元模拟在基板10取不同厚度时半导体薄膜40中的信号测量电路的输出信号，发现半导体薄膜40中的信号测量电路的输出信号与基板10厚度的关系与理论结果一致。
进一步地，第二安装面10b设有第二弹性载体30，半导体薄膜40的数量至少为二，其中至少一个半导体薄膜40位于第一弹性载体20上，另外的半导体薄膜40位于第二弹性载体30上，半导体薄膜40中相邻分布。基板10的两个安装面上分别设有第一弹性载体20与第二弹性载体30，第一弹性载体20与第二弹性载体30上均设有半导体薄膜40，在基板10变形时，第一弹性载体20与第二弹性载体30跟随基板10弯曲变形，基板10放大应变信号，其中应变感应电阻能检测基板10的弯曲变形量，并由半导体薄膜40中的信号测量电路输出可识别的电信号。
第一弹性载体20、第二弹性载体30具有弹性变形的特性，用于安装半导体薄膜40，比如聚酰亚胺(Polyimide，PI)、柔性电路板、玻纤板、聚对苯二甲酸乙二醇酯(polyethylene glycol terephthalate，PET)、金属、塑料或其他材质。在第一弹性载体20与第二弹性载体30均设有半导体薄膜40时，半导体薄膜40检测第一弹性载体20与第二弹性载体30的应变差异，通过电路处理，输出可识别的电信号。
进一步地，基板10上开设有应变集中槽11，半导体薄膜40靠近于应变集中槽11设置。该方案容易加工，半导体薄膜40靠近于应变集中槽11设置，能够使应变更为集中在弹性载体上靠近于应变集中槽11处，能够让半导体薄膜40检测到应变集中槽11区域的应变，从而获取更大的应变信号，使压力感应式结构100更灵敏。参照压力感应式结构100的约束条件，基板上开设有8个应变集中槽，对第一弹性载体20进行有限元模拟分析，如图4所示，第一弹性载体20的应变集中在基板的应变集中槽处，半导体薄膜40能检测到非常大的应变信号，使得该压力感应式结构100精度高、可靠度高、灵敏度高。第二弹性载体30的情况类似于第一弹性载体20。
进一步地，如图4(a)所示，应变集中槽11为沿垂直于第一安装面10a的方向延伸的通槽；或者，如图4(b)所示，应变集中槽11为沿倾斜于第一安装面10a的方向延伸的通槽；或者，如图4(c)所示，应变集中槽11为纵截面呈预定形状的通槽；预定形状可以呈漏斗纵截面、圆形等。或者，如图4(d)所示，应变集中槽11为纵截面呈预定形状的盲槽。盲槽是指不贯通于基板10的槽。预定形状可以呈漏斗纵截面、圆形等。半导体薄膜40靠近于应变集中槽11设置，用于放大弹性载体的应变信号，实现压力感应。或者，如图4(e)所示，基板10为一整体板，基板10的弯曲变形传递至第一弹性载体20、第二弹性载体30上，半导体薄膜40能检测基板10的弯曲变形量，并由半导体薄膜40中的信号测量电路输出可识别的电信号。
压力感应式结构100可通过更改基板10的厚度和改变应变集中槽11的形状，适用于不同场合下不同灵敏度要求。
半导体薄膜40包括硅(Si)薄膜、锗(Ge)薄膜，砷化镓(GaAs)薄膜、氮化镓(GaN)薄膜、碳化硅(SiC)薄膜、硫化锌(ZnS)薄膜、或者氧化锌(ZnO)薄膜中的至少一项。，例如硅薄膜，本身应变系数很高，但硬度太大，力或应变传递至其上时会使信号输出减小很多。将其减薄能减小其刚度，增加其对力或应变的响应率，并可直接贴合于例如印刷电路板或柔性电路板等材料表面进行力或应变的测量。半导体薄膜40的最厚处的厚度n＜70um，或n＜50um，或n＜30um，或n＜25um，或n＜20um，或n＜15um，或n＜10um。
进一步地，一个半导体薄膜40中的信号测量电路具有包括感测部件，感测部件可以用于感测压力、温度等参数。
在一些实施例中，感测部件包括一个应变感应电阻，单个电阻的测量电路，可以测量单个电阻的阻值，作为信号输出，比如，欧姆表测电阻、伏安法测电阻、RC电路测电阻、RC振荡电路测电阻、RLC并联谐振电路测电阻等方式，按需选用。欧姆表测电阻与伏安法测电阻为直接测量电阻的方式，相应的电阻测量电路属于常规技术。
信号测量电路设计如下：
①请参阅图5，信号测量电路包括一个应变感应电阻R和一个定值电容C串联或并联组成的RC电路。利用RC电路测量电阻，RC电路的时间常数为：τ＝RC依据上述公式，已知电容的电容量C，则可以通过测量到的时间常数τ反算出电阻阻值R。
②请参阅图6，信号测量电路包括一个应变感应电阻R、一个定值电容C和放大器，将RC串、并联选频网络和放大器结合起来，放大器可采用集成运算放大器。RC串并联选频网络接在运算放大器的输出端和同相输入端之间，构成正反馈，R F、R’接在运算放大器的输出端和反相输入端之间，构成负反馈。正反馈电路和负反馈电路构成一文氏电桥振荡电路，运算放大器的输入端和输出端分别跨接在电桥的两对角线上。该文氏电桥振荡电路的输出频率为：
Figure PCTCN2021075915-appb-000002
频率f 0对电阻阻值R的变化非常敏感。依据上述公式，已知电容的电容量C，则可以通过测量到的频率f 0反算出电阻阻值R。
③请参阅图7，信号测量电路包括一个应变感应电阻R、一个定值电感L和一个定值电容C，组成RLC谐振电路是将RL串联电路和电容器C并联的电路。该RLC谐振电路的角频率为：
Figure PCTCN2021075915-appb-000003
依据上述公式，已知电感的电感量L和电容的电容量C，则可以通过测量出的角频率ω反算出电阻阻值R。
感测部件包括两个电阻，比如包括一个应变感应电阻与一个参考电阻串联形成的分压电路；或者包括两个所述应变感应电阻串联形成的分压电路；或者包括一个所述应变感应电阻与一个参考电阻并联形成的分流电路，或者包括两个所述应变感应电阻并联形成的分流电路。
在一个实施例中，信号测量电路包括两个应变感应电阻组成的串联分压电路或并联分流电路时，其中一个应变感应电阻为正应变系数感应电阻，另一个为负应变系数感应电阻；或两个感应电阻具有不同的应变系数。
信号测量电路设计如下：
请参阅图8，两个电阻构成串联分压电路，采用恒压源，在V+与V-两端加以输入电压U i，检测Vo处的电势，或测量Vo与地之间的输出电压U o，有输入输出电压公式：
Figure PCTCN2021075915-appb-000004
请参阅图9，两个电阻构成并联分流电路，采用恒流源，在I+与I-两端加以输入电流I，测量R 1支路上的输出电流I 1，有输入输出电流公式：
Figure PCTCN2021075915-appb-000005
请参阅图10，感测部件包括四个电阻R1、R2、R3和R4，其中可以是，包括一个应变感应电阻与三个参考电阻电连接的惠斯通电桥；或者，包括两个应变感应电阻与两个参考电阻电连接形成的半桥电路；或者，包括四个应变感应电阻电连接形成的全桥电路；或者，包括三个应变感应电阻与一个参考电阻电连接形成的电桥电路。
在一个实施例中，四个应变感应电阻组成的电桥电路，中两个应变感应电阻为正应变系数感应电阻，另两个为负应变系数感应电阻；或四个电阻具有不同的应变系数。
信号测量电路设计如下：
4个电阻组成的电桥电路，如图10，输出电压公式为：
Figure PCTCN2021075915-appb-000006
其中，U i为Vcc电压，U 0为Vm+和Vm-的压差。另外，在四个应变感应电阻电连接形成的全桥电路中，对于四个应变感应电阻的选取有很多种方式，只需满足上述公式中的U 0在产生形变时发生变化即可。其中几种典型方式：
R1、R4为正应变系数感应电阻，R2、R3为负应变系数感应电阻；或R1、R4为负应变系数感应电阻，R2、R3为正应变系数感应电阻；或R1、R4为正(或负)应变系数感应电阻，R2、R3为零应变系数感应电阻。
进一步地，半导体薄膜40上还可以设置温度检测元件，感测部件还包括一个温度检测元件，温度检测元件用于所在位置的温度并输出温度检测信号。温度检测元件可用于测量局部温度，还可以将温度信息用于由于温度造成的结构膨胀进行输出信号补偿。可使半导体薄膜既可以输出形变信号，又可以输出温度信号。
进一步地，信号测量电路还包括与感测部件连接，用于将所述感测部件输出的信号进行放大的放大电路。进一步地，信号测量电路还包括补偿电路，其输入端与所述放大电路的输出端耦合，用于根据所述放大电路输出的信号对所述感测部件的输出电压失衡进行补偿。
将压力感应式结构100贴合于面板内侧、侧边框内侧或其它薄壁件内侧的情况是类似 的。以压力感应式结构100通过胶体203贴合于面板201且半导体薄膜40中的信号测量电路包括四个应变感应电阻R1、R2、R3和R4电连接形成的全桥为例，说明该压力感应式结构100，相对于现有其它传感器结构，对胶体203的依赖更低，能够消除因胶体203的粘合差异带来误差，使测量精确可靠。
当面板201受压时，面板201将产生向下的弯曲变形，压力感应式结构100将通过胶体203跟随面板201产生形变，从而导致应变感应电阻R1、R2、R3和R4形变，进而导致R1、R2、R3和R4电阻发生改变。由于面板201为向下弯曲变形，面板201下表面产生拉伸变形。对于选用的胶体203，由于横向比纵向的尺寸大很多，通常宽度和厚度之比至少在50:1以上，胶体203在纵向的变形量远远小于横向变形量。
进一步地，第一弹性载体20上的半导体薄膜40位于该第一弹性载体20面向于基板10的一侧，第一弹性载体20上的半导体薄膜40位于该第一弹性载体20背离于基板10的一侧。选用上述两种方案中的至少一种即可。第二弹性载体30上的半导体薄膜40位于该第二弹性载体30面向于基板10的一侧，第二弹性载体30上的半导体薄膜40位于该第二弹性载体30背离于基板10的一侧。选用上述两种方案中的至少一种即可。半导体薄膜40可分布于对应弹性载体一侧或两侧，半导体薄膜40可分布于对应弹性载体正反任意一面，组成相应的半导体薄膜4040中的信号测量电路。
进一步地，半导体薄膜40的数量至少为二，半导体薄膜40呈阵列状分布在基板10上。该方案可以对多个位置进行压力感应，还可以通过算法实现机械按键无法实现的手势识别和滑动功能。
进一步地，一半导体薄膜40中的信号测量电路中的应变感应电阻其中两个一一对应相重合；或者，一半导体薄膜40中的信号测量电路中的其中两个应变感应电阻相错开分布。半导体薄膜40可根据需要全部或部分分布在应变集中槽11的附近。
请参阅图11、图12，本申请第一实施例提供的电子产品，包括面板201及上述压力感应式结构100，压力感应式结构100贴合在面板201的内侧。
将压力感应式结构100贴合在电子产品面板201的内侧，在按压面板201时，面板201会产生弯曲变形，并带动基板10产生弯曲变形，应变感应电阻检测出弯曲变形，并由半导体薄膜40中的信号测量电路输出可识别的电信号。通过检测面板201的应变，来实现按压压力与位置的检测。电子产品能避免传统机械按键会带来的外观上不连续、防水防尘困难、寿命短、安装困难的情况。
面板201可以为具有刚性结构的触摸屏、显示器或其他电子设备。通过将压力感应式结构100与面板201连接，能够在实现精准识别触控位置的同时精准识别触控压力的大小， 为电子设备在产品应用、人机交互及消费体验上扩展了应用空间。用户通过触按触摸屏、显示器或电子设备，可以直接获得精确地压力级别及量数。通过校正之后，可以获得按压的精确压力值。
进一步地，压力感应式结构100与面板201之间通过胶体203、焊接或其它机械连接方式相连接。在使用胶体203时，即贴即用，使用方便，简化装配工序，方便返工。当用户手指按压在面板201上，面板201将发生弯曲变形，胶体203带动压力感应式结构100发生形变，得出用户操作位置和力度，实现压力触控功能。胶体203为水胶或双面胶。
请参阅图13，本申请第二实施例提供的电子产品，包括侧边框202及上述压力感应式结构100，压力感应式结构100贴合在侧边框202的内侧。
将压力感应式结构100贴合在电子产品侧边框202，尤其是智能手机侧边框202，在按压侧边框202时，基板10会跟随侧边框202产生弯曲变形，应变感应电阻检测出弯曲变形，并由半导体薄膜40中的信号测量电路输出可识别的电信号，识别按压位置和力度，实现侧边触摸按键功能，不需要单独在电子产品侧边框202开槽，使外观简洁大方。电子产品能避免传统机械按键会带来的外观上不连续、防水防尘困难、寿命短、安装困难的情况。
进一步地，压力感应式结构100与侧边框202之间通过胶体203、焊接或其它机械连接方式相连接。在使用胶体203时，即贴即用，使用方便，简化装配工序，方便返工。胶体203为水胶或双面胶。
可以理解地，压力感应式结构100还可以贴合于其它薄壁件内侧，在按压薄壁件时，薄壁件会产生弯曲变形，并带动基板产生弯曲变形，应变感应电阻检测出弯曲变形，并由信号测量电路输出可识别的电信号。通过检测薄壁件的应变，来实现按压压力与位置的检测。
进一步地，压力感应式结构与薄壁件之间通过胶体、焊接或其它机械连接方式相连接。在使用胶体时，即贴即用，使用方便，简化装配工序，方便返工。胶体为水胶或双面胶。
以上仅为本申请的较佳实施例而已，并不用以限制本申请，凡在本申请的精神和原则之内所作的任何修改、等同替换和改进等，均应包含在本申请的保护范围之内。

Claims (15)

  1. 一种压力感应式结构，其特征在于，包括：
    基板，其具有相背对的第一安装面与第二安装面；
    第一弹性载体，设于所述第一安装面；以及
    至少一个半导体薄膜，其中至少一个所述半导体薄膜位于所述第一弹性载体上，且至少一个所述半导体薄膜内集成有信号测量电路，所述信号测量电路用于检测所述基板的弯曲变形量输出可被识别的电信号。
  2. 如权利要求1所述的压力感应式结构，其特征在于，所述第二安装面设有第二弹性载体，所述半导体薄膜的数量至少为二，其中至少一个所述半导体薄膜位于所述第一弹性载体上，另外的所述半导体薄膜位于所述第二弹性载体上，各所述半导体薄膜相邻分布。
  3. 如权利要求2所述的压力感应式结构，其特征在于，所述第一弹性载体上的所述半导体薄膜位于该第一弹性载体面向于所述基板的一侧和/或该第一弹性载体背离于所述基板的一侧；所述第二弹性载体上的所述半导体薄膜位于该第二弹性载体面向于所述基板的一侧和/或该第二弹性载体背离于所述基板的一侧。
  4. 如权利要求1至3任一项所述的压力感应式结构，其特征在于，所述半导体薄膜包括硅(Si)薄膜、锗(Ge)薄膜，砷化镓(GaAs)薄膜、氮化镓(GaN)薄膜、碳化硅(SiC)薄膜、硫化锌(ZnS)薄膜、或者氧化锌(ZnO)薄膜中的至少一项。
  5. 如权利要求1至3任一项所述的压力感应式结构，其特征在于，所述半导体薄膜的厚度n＜70um，或n＜50um，或n＜30um，或n＜25um，或n＜20um，或n＜15um，或n＜10um。
  6. 如权利要求1至3任一项所述的压力感应式结构，其特征在于，所述基板上开设有应变集中槽，所述半导体薄膜靠近于所述应变集中槽设置。
  7. 如权利要求6所述的压力感应式结构，其特征在于：所述应变集中槽为沿垂直于所述第一安装面的方向延伸的通槽；
    或者，所述应变集中槽为沿倾斜于所述第一安装面的方向延伸的通槽；
    或者，所述应变集中槽为纵截面呈预定形状的通槽；
    或者，所述应变集中槽为纵截面呈预定形状的盲槽。
  8. 如权利要求1至3任一项所述的压力感应式结构，其特征在于，一所述信号测量电路包括感测部件；
    一所述感测部件包括一个应变感应电阻；
    或者，一所述感测部件包括一个应变感应电阻和一个定值电容串联或并联组成的RC电路；
    或者，一所述感测部件包括一个应变感应电阻、一个定值电感和一个定值电容组成的谐振电路；
    或者，一所述感测部件包括一个应变感应电阻与一个参考电阻串联形成的分压电路；
    或者，一所述感测部件包括两个所述应变感应电阻串联形成的分压电路；
    或者，一所述感测部件包括一个所述应变感应电阻与一个参考电阻并联形成的分流电路；
    或者，一所述感测部件包括两个所述应变感应电阻并联形成的分流电路；
    或者，一所述感测部件包括一个所述应变感应电阻与三个参考电阻电连接的惠斯通电桥；
    或者，一所述感测部件包括两个所述应变感应电阻与两个参考电阻电连接形成的半桥电路；
    或者，一所述感测部件包括四个所述应变感应电阻电连接形成的全桥电路；
    或者，一所述感测部件包括三个所述应变感应电阻与一个参考电阻电连接形成的电桥电路。
  9. 如权利要求8所述的压力感应式结构，其特征在于，所述感测部件还包括一个温度检测元件，所述温度检测元件用于所在位置的温度并输出温度检测信号。
  10. 如权利要求8所述的压力感应式结构，其特征在于，所述信号测量电路还包括与所述感测部件连接，用于将所述感测部件输出的信号进行放大的放大电路。
  11. 如权利要求10所述的压力感应式结构，其特征在于，所述信号测量电路还包括补偿电路，其输入端与所述放大电路的输出端耦合，用于根据所述放大电路输出的信号对所述感测部件的输出电压失衡进行补偿。
  12. 一种电子产品，其特征在于，包括面板及如权利要求1至11任一项所述的压力感应式结构，所述压力感应式结构贴合在所述面板的内侧。
  13. 如权利要求12所述的电子产品，其特征在于，所述压力感应式结构与所述面板之间通过胶体或焊接相连接。
  14. 一种电子产品，其特征在于，包括侧边框及如权利要求1至11任一项所述的压力感应式结构，所述压力感应式结构贴合在所述侧边框的内侧。
  15. 如权利要求14所述的电子产品，其特征在于，所述压力感应式结构与所述侧边框之间通过胶体或焊接相连接。
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