CN115362356A - 一种应变传感膜、压力传感器、应变感测系统 - Google Patents

一种应变传感膜、压力传感器、应变感测系统 Download PDF

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Publication number
CN115362356A
CN115362356A CN202180018123.6A CN202180018123A CN115362356A CN 115362356 A CN115362356 A CN 115362356A CN 202180018123 A CN202180018123 A CN 202180018123A CN 115362356 A CN115362356 A CN 115362356A
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China
Prior art keywords
strain sensing
thin film
film
resistors
resistor
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Pending
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CN202180018123.6A
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余锦波
陈之昀
朱长锋
李灏
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Shenzhen New Degree Technology Co Ltd
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Shenzhen New Degree Technology Co Ltd
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Publication of CN115362356A publication Critical patent/CN115362356A/zh
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L1/00—Measuring force or stress, in general
    • G01L1/20—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress
    • G01L1/22—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges
    • G01L1/2287—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges constructional details of the strain gauges
    • G01L1/2293—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges constructional details of the strain gauges of the semi-conductor type
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L1/00—Measuring force or stress, in general
    • G01L1/14—Measuring force or stress, in general by measuring variations in capacitance or inductance of electrical elements, e.g. by measuring variations of frequency of electrical oscillators
    • G01L1/142—Measuring force or stress, in general by measuring variations in capacitance or inductance of electrical elements, e.g. by measuring variations of frequency of electrical oscillators using capacitors
    • G01L1/148—Measuring force or stress, in general by measuring variations in capacitance or inductance of electrical elements, e.g. by measuring variations of frequency of electrical oscillators using capacitors using semiconductive material, e.g. silicon
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L1/00—Measuring force or stress, in general
    • G01L1/20—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress
    • G01L1/22—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges
    • G01L1/225—Measuring circuits therefor
    • G01L1/2262—Measuring circuits therefor involving simple electrical bridges
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L1/00—Measuring force or stress, in general
    • G01L1/20—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress
    • G01L1/22—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges
    • G01L1/2268—Arrangements for correcting or for compensating unwanted effects
    • G01L1/2281—Arrangements for correcting or for compensating unwanted effects for temperature variations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/20—Resistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/8605—Resistors with PN junctions
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L1/00—Measuring force or stress, in general
    • G01L1/18—Measuring force or stress, in general using properties of piezo-resistive materials, i.e. materials of which the ohmic resistance varies according to changes in magnitude or direction of force applied to the material
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
    • G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
    • G06F2203/04105—Pressure sensors for measuring the pressure or force exerted on the touch surface without providing the touch position
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Pressure Sensors (AREA)
  • Measuring Fluid Pressure (AREA)
  • Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)

Abstract

本申请公开一种应变传感膜、压力传感器、应变感测系统，其中，应变传感膜包括半导体薄膜(20)，通过在半导体薄膜(20)内设置温度传感器(203)，获得更精确的传感膜的温度，并结合校准测试得到的有效灵敏度系数与温度关系表对应变传感膜的灵敏度进行修正，实现更好的有效灵敏度系数补偿，可以充分利用半导体薄膜应变片的高灵敏度，可以广泛应用于需要测量局部应变或者应变变化、力或力变化、压力或压力变化、位移、变形、弯曲或弯曲的应用场景中。

Description

PCT国内申请，说明书已公开。

Claims (19)

  1. PCT国内申请，权利要求书已公开。
CN202180018123.6A 2020-03-19 2021-02-08 一种应变传感膜、压力传感器、应变感测系统 Pending CN115362356A (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US202062992000P 2020-03-19 2020-03-19
US62/992,000 2020-03-19
US202063064086P 2020-08-11 2020-08-11
US63/064,086 2020-08-11
PCT/CN2021/075912 WO2021185000A1 (zh) 2020-03-19 2021-02-08 一种应变传感膜、压力传感器、应变感测系统

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CN115362356A true CN115362356A (zh) 2022-11-18

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CN202180018123.6A Pending CN115362356A (zh) 2020-03-19 2021-02-08 一种应变传感膜、压力传感器、应变感测系统
CN202180018300.0A Pending CN115362346A (zh) 2020-03-19 2021-02-08 一种应变感测膜、压力传感器、混合应变感测系统
CN202180018343.9A Pending CN115210892A (zh) 2020-03-19 2021-02-08 一种压力感应装置及压力感应设备
CN202180018080.1A Pending CN115605984A (zh) 2020-03-19 2021-02-08 一种应变感应膜的制备方法、应变感应膜以及压力传感器
CN202180018324.6A Pending CN115210682A (zh) 2020-03-19 2021-02-08 压力感应式结构及电子产品

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CN202180018300.0A Pending CN115362346A (zh) 2020-03-19 2021-02-08 一种应变感测膜、压力传感器、混合应变感测系统
CN202180018343.9A Pending CN115210892A (zh) 2020-03-19 2021-02-08 一种压力感应装置及压力感应设备
CN202180018080.1A Pending CN115605984A (zh) 2020-03-19 2021-02-08 一种应变感应膜的制备方法、应变感应膜以及压力传感器
CN202180018324.6A Pending CN115210682A (zh) 2020-03-19 2021-02-08 压力感应式结构及电子产品

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US (6) US20230127473A1 (zh)
CN (5) CN115362356A (zh)
WO (6) WO2021185002A1 (zh)

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WO2021185002A1 (zh) 2021-09-23
CN115210892A (zh) 2022-10-18
US20230146214A1 (en) 2023-05-11
US20230144931A1 (en) 2023-05-11
WO2021185004A1 (zh) 2021-09-23
US20230141257A1 (en) 2023-05-11
WO2021185003A1 (zh) 2021-09-23
WO2021185000A1 (zh) 2021-09-23
CN115362346A (zh) 2022-11-18
WO2021185001A1 (zh) 2021-09-23
CN115210682A (zh) 2022-10-18
CN115605984A (zh) 2023-01-13
US20230127473A1 (en) 2023-04-27
WO2021188799A1 (en) 2021-09-23
US20230138119A1 (en) 2023-05-04
US20210293633A1 (en) 2021-09-23
US11796405B2 (en) 2023-10-24

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