WO2022056850A1 - 温度压力传感器及电子设备 - Google Patents

温度压力传感器及电子设备 Download PDF

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Publication number
WO2022056850A1
WO2022056850A1 PCT/CN2020/116239 CN2020116239W WO2022056850A1 WO 2022056850 A1 WO2022056850 A1 WO 2022056850A1 CN 2020116239 W CN2020116239 W CN 2020116239W WO 2022056850 A1 WO2022056850 A1 WO 2022056850A1
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WO
WIPO (PCT)
Prior art keywords
sensing
temperature
resistors
resistor
pressure
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PCT/CN2020/116239
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English (en)
French (fr)
Inventor
黄拓夏
李灏
Original Assignee
深圳纽迪瑞科技开发有限公司
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Application filed by 深圳纽迪瑞科技开发有限公司 filed Critical 深圳纽迪瑞科技开发有限公司
Priority to PCT/CN2020/116239 priority Critical patent/WO2022056850A1/zh
Priority to US18/027,013 priority patent/US20230366757A1/en
Priority to CN202080103463.4A priority patent/CN116097073A/zh
Publication of WO2022056850A1 publication Critical patent/WO2022056850A1/zh

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L1/00—Measuring force or stress, in general
    • G01L1/20—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress
    • G01L1/22—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges
    • G01L1/225—Measuring circuits therefor
    • G01L1/2262—Measuring circuits therefor involving simple electrical bridges
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L1/00—Measuring force or stress, in general
    • G01L1/20—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress
    • G01L1/22—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
    • G01D21/00—Measuring or testing not otherwise provided for
    • G01D21/02—Measuring two or more variables by means not covered by a single other subclass
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
    • G01K7/16—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
    • G01K7/16—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements
    • G01K7/18—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements the element being a linear resistance, e.g. platinum resistance thermometer
    • G01K7/20—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements the element being a linear resistance, e.g. platinum resistance thermometer in a specially-adapted circuit, e.g. bridge circuit
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L1/00—Measuring force or stress, in general
    • G01L1/20—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress
    • G01L1/22—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges
    • G01L1/2268—Arrangements for correcting or for compensating unwanted effects
    • G01L1/2281—Arrangements for correcting or for compensating unwanted effects for temperature variations

Definitions

  • the present application belongs to the technical field of temperature and pressure detection, and in particular relates to a temperature and pressure sensor and electronic equipment.
  • the devices for detecting temperature and pressure are independent, namely, a temperature detecting device and a pressure detecting device.
  • a temperature detecting device and a pressure detecting device.
  • two detection devices need to be arranged on the object to be detected, which will make the structure bulkier and inconvenient to assemble and use.
  • One of the purposes of the embodiments of the present application is to provide a temperature and pressure sensor and an electronic device, so as to solve the problem in the prior art that the temperature detection device and the pressure detection device need to be assembled on the object to be detected, which makes the structure bulky and inconvenient to use. technical problem.
  • a temperature and pressure sensor comprising a substrate, a first sensing resistor and a second sensing resistor, wherein the first sensing resistor and the second sensing resistor have the same strain coefficient and different resistance temperature coefficients; the substrate has a pressure sensing area and a temperature sensing area;
  • the first sensing resistors are respectively provided on two opposite surfaces of the pressure sensing area, and the first sensing resistors located in the pressure sensing area form a pressure sensing unit;
  • the first sensing resistor and the second sensing resistor are adjacently disposed on at least one surface of the temperature sensing area; the first sensing resistor and the second sensing resistor located in the temperature sensing area form a temperature induction unit.
  • a temperature and pressure sensor comprising a substrate, a first sensing resistor and a second sensing resistor, the first sensing resistor and the second sensing resistor having different strain coefficients and different resistance temperature coefficients ;
  • the substrate has a pressure sensing area and a temperature sensing area;
  • the first sensing resistors are respectively provided on two opposite surfaces of the pressure sensing area, and the first sensing resistors located in the pressure sensing area form a pressure sensing unit;
  • the first sensing resistor and the second sensing resistor are adjacently disposed on at least one surface of the temperature sensing area; the first sensing resistor and the second sensing resistor located in the temperature sensing area form a temperature induction unit.
  • an electronic device comprising a to-be-detected piece and the above-mentioned temperature and pressure sensor, wherein the substrate is abutted on the surface of the to-be-detected piece.
  • the substrate has a pressure sensing area and a temperature sensing area.
  • the two opposite surfaces of the pressure sensing area are respectively provided with first sensing resistors, and these first sensing resistors form a pressure sensing unit.
  • the output electrical signal will not change.
  • the substrate is bent and deformed by force, the first sensing resistors on the two surfaces of the pressure sensing area will deform differently, resulting in different resistance changes, resulting in changes in electrical signals, thereby outputting pressure information.
  • At least one surface of the temperature sensing area is provided with a first sensing resistor and a second sensing resistor, and the first sensing resistor and the second sensing resistor form a temperature sensing unit.
  • the first sensing resistor and the second sensing resistor form a temperature sensing unit.
  • the beneficial effect of the electronic device provided by the embodiment of the present application is that: in the electronic device, the substrate in the temperature and pressure sensor is abutted against the to-be-detected part, so that the substrate can follow the deformation of the to-be-detected part, and through the pressure in the temperature and pressure sensor
  • the sensing unit and the temperature sensing unit detect the pressure and temperature independently, and the structure is small and easy to use.
  • FIG. 1 is a schematic structural diagram of a temperature and pressure sensor provided by an embodiment of the present application.
  • FIG. 2 is a schematic diagram of various implementations of the pressure sensing unit in the temperature and pressure sensor of FIG. 1;
  • FIG. 3 is a schematic diagram of various implementations of the temperature sensing unit in the temperature and pressure sensor of FIG. 1;
  • FIG. 4 is a schematic structural diagram of a temperature and pressure sensor provided by another embodiment of the present application.
  • FIG. 5 is a schematic diagram of a pressure sensing unit in a temperature and pressure sensor provided by an embodiment of the present application
  • FIG. 6 is a schematic diagram of a temperature sensing unit in a temperature and pressure sensor provided by an embodiment of the present application
  • FIG. 7 is a schematic structural diagram of a temperature and pressure sensor provided by another embodiment of the present application.
  • FIG. 8 is a schematic structural diagram of an electronic device provided by an embodiment of the present application.
  • FIG. 9 is a schematic structural diagram of the electronic device of FIG. 8 when the to-be-detected part is deformed by force;
  • FIG. 10 is a schematic structural diagram of an electronic device provided by another embodiment of the present application.
  • FIG. 11 is a schematic structural diagram of the electronic device of FIG. 10 when the object to be detected is deformed by force.
  • first and second are only used for descriptive purposes, and should not be construed as indicating or implying relative importance or implying the number of indicated technical features. Thus, a feature defined as “first” or “second” may expressly or implicitly include one or more of that feature.
  • plurality means two or more, unless otherwise expressly and specifically defined.
  • an embodiment of the present application provides a temperature and pressure sensor 100 , which includes a substrate 10 , a first sensing resistor and a second sensing resistor.
  • the substrate 10 may be made of a material having elastic deformation properties.
  • the first sensing resistor and the second sensing resistor have the same strain coefficient and different resistance temperature coefficients.
  • the substrate 10 has a pressure sensing area 11 and a temperature sensing area 12 , which are areas that divide the substrate 10 by function.
  • Two opposite surfaces of the pressure sensing area 11 are respectively provided with first sensing resistors, and the first sensing resistors located in the pressure sensing area 11 form a pressure sensing unit.
  • At least one surface of the temperature sensing area 12 is provided with a first sensing resistor and a second sensing resistor adjacent to each other; the first sensing resistor and the second sensing resistor located in the temperature sensing area 12 form a temperature sensing unit.
  • the first sensing resistor and the second sensing resistor may be a single resistor, or a case where the electrical connection of a plurality of resistors is equivalent to a single resistor.
  • gage factor here (English name: Gage Factor, referred to as GF), which is the sensitivity coefficient of the resistance strain gage, that is, the ratio of the resistance change rate ⁇ R/R to the strain of the surface of the component that causes the resistance change in the direction of the strain gage axis .
  • the temperature coefficient of resistance (English name: temperature coefficient of resistance, referred to as TCR), indicates the relative change of the resistance value when the temperature changes by 1 °C, the unit is ppm/°C.
  • the expression for the temperature coefficient of resistance is:
  • K is the resistance temperature coefficient
  • T 0 is the initial temperature value
  • T is the temperature value at a predetermined time
  • R 0 is the initial resistance value of the sensing resistor
  • R is the resistance value of the sensing resistor at a predetermined time.
  • the substrate 10 has a pressure sensing area 11 and a temperature sensing area 12 . Two opposite surfaces of the pressure sensing area 11 are respectively provided with first sensing resistors, and these first sensing resistors form a pressure sensing unit.
  • the output electrical signal will not change.
  • the substrate 10 is bent and deformed by force, the first sensing resistors on the two surfaces of the pressure sensing area 11 will deform differently, resulting in different resistance changes, resulting in changes in electrical signals, thereby outputting pressure information.
  • At least one surface of the temperature sensing area 12 is provided with a first sensing resistor and a second sensing resistor, and the first sensing resistor and the second sensing resistor form a temperature sensing unit.
  • the first sensing resistor and the second sensing resistor form a temperature sensing unit.
  • the first implementation of the temperature sensing unit is: a first sensing resistor R 3 and a second sensing resistor R 4 are provided on one surface of the temperature sensing area 12 ,
  • the temperature sensing unit is a voltage divider circuit formed by connecting the first sensing resistor R 3 and the second sensing resistor R 4 in the temperature sensing area 12 in series.
  • the temperature sensing unit can independently detect the temperature signal without being affected by the force and deformation of the substrate 10 .
  • the second implementation of the temperature sensing unit is: a first sensing resistor R 3 and a second sensing resistor R 4 are provided on one surface of the temperature sensing area 12 ,
  • the temperature sensing unit is a shunt circuit formed by the parallel connection of the first sensing resistor R 3 and the second sensing resistor R 4 located in the temperature sensing area 12 .
  • a constant current source is used, the input current I is applied to both ends of I+ and I-, and the output current I3 on the R3 branch is measured.
  • the temperature sensing unit can independently detect the temperature signal without being affected by the force and deformation of the substrate 10 .
  • the third implementation of the temperature sensing unit is: a first sensing resistor R 3 and a second sensing resistor R 4 are provided on one surface of the temperature sensing area 12 ,
  • the temperature sensing unit is a bridge circuit formed by electrically connecting two reference resistors R0, a first sensing resistor R3 and a second sensing resistor R4 located in the temperature sensing region 12 , the first sensing resistor R3 and the second sensing resistor R 4 are connected in series on a branch. After the ambient temperature changes or bending deformation, the resistance value of the reference resistor R0 changes very little and can be ignored.
  • the setting position of the reference resistor R0 is not limited, for example, the corresponding reference resistor, the first sensing resistor R 3 and the second sensing resistor R 4 are set in the same temperature sensing area 12 .
  • the temperature sensing unit can independently detect the temperature signal without being affected by the force and deformation of the substrate 10 .
  • the fourth implementation of the temperature sensing unit is: one surface of the temperature sensing area 12 is provided with two first sensing resistors (R 5 , R 7 ) and two second sensing resistors ( R 6 , R 8 ), the temperature sensing unit is a bridge formed by electrically connecting two first sensing resistors (R 5 , R 7 ) and two second sensing resistors (R 6 , R 8 ) located in the temperature sensing area 12 Circuit, two first sensing resistors (R 5 , R 7 ) are used as one pair of opposite bridge arms of the bridge circuit, and two second sensing resistors (R 6 , R 8 ) are used as another pair of opposite bridges in the bridge circuit arm.
  • the temperature sensing unit can independently detect the temperature signal without being affected by the force and deformation of the substrate 10 .
  • a fifth implementation of the temperature sensing unit is: a first sensing resistor R 5 and a second sensing resistor R 6 are provided on one surface of the temperature sensing area 12 , and the temperature sensing area 12 is provided with a first sensing resistor R 5 and a second sensing resistor R 6 A first sensing resistor R7 and a second sensing resistor R8 are arranged on the other surface .
  • the temperature sensing unit is a bridge circuit formed by electrically connecting two first sensing resistors and two second sensing resistors located in the temperature sensing area 12, and the two first sensing resistors (R 5 , R 7 ) are used as One pair of opposite bridge arms of the bridge circuit, and the two second sensing resistors (R 6 , R 8 ) are used as the other pair of opposite bridge arms of the bridge circuit.
  • the temperature sensing unit can independently detect the temperature signal without being affected by the force and deformation of the substrate 10 .
  • the sixth implementation of the temperature sensing unit is: a first sensing resistor R 3 and a second sensing resistor R 4 are provided on one surface of the temperature sensing area, and the temperature sensing unit It includes a first resistance measuring circuit for measuring the resistance value of the first sensing resistor R3 and a second resistance measuring circuit for measuring the resistance value of the second sensing resistor R4 .
  • the temperature sensing unit can independently detect the temperature signal without being affected by the force and deformation of the substrate 10 .
  • the first resistance measurement circuit and the second resistance measurement circuit have various implementation methods, such as resistance measurement by ohmmeter, resistance measurement by voltammetry, resistance measurement by RC circuit, resistance measurement by RC oscillator circuit, and resistance measurement by RLC parallel resonant circuit. and so on, as required.
  • Ohmmeter resistance measurement and voltammetry resistance measurement are methods of direct resistance measurement, and the corresponding resistance measurement circuit belongs to the conventional technology.
  • the RC circuit may be an RC series circuit as shown in (e) in FIG. 3 , or may be an RC parallel circuit as shown in (f) in FIG. 3 .
  • the time constant of this RC circuit is:
  • the resistance value R of the resistance can be inversely calculated by the measured time constant ⁇ .
  • the resistor R in the RC circuit is the first sensing resistor R 3 or the second sensing resistor R 4 .
  • the RC oscillator circuit is a combination of an RC series-parallel frequency selection network and an amplifier, and the amplifier can use an integrated operational amplifier.
  • the RC series-parallel frequency selection network is connected between the output terminal of the operational amplifier and the non-inverting input terminal to form a positive feedback
  • RF and R' are connected between the output terminal of the operational amplifier and the inverting input terminal to form a negative feedback.
  • the positive feedback circuit and the negative feedback circuit form a Venturi bridge oscillation circuit, and the input end and the output end of the operational amplifier are respectively connected across the two diagonal lines of the bridge.
  • the output frequency of this Wien bridge oscillator circuit is:
  • the frequency f 0 is very sensitive to changes in the resistance value R of the resistor. According to the above formula, if the capacitance C of the capacitor is known, the resistance value R of the resistance can be inversely calculated by the measured frequency f 0 .
  • the resistor R in the RC series-parallel frequency selection network is the first sensing resistor R 3 or the second sensing resistor R 4 .
  • the RLC parallel resonance circuit is a circuit in which the RL series circuit and the capacitor C are connected in parallel.
  • the angular frequency of this RLC parallel resonant circuit is:
  • the resistance value R of the resistor can be inversely calculated through the measured angular frequency ⁇ .
  • the resistor R in the RLC parallel resonant circuit is the first sensing resistor R 3 or the second sensing resistor R 4 .
  • the first implementation of the pressure sensing unit is as follows: two opposite surfaces of the pressure sensing area 11 are respectively provided with a first sensing resistor R 1 , R 2 , two first sensing resistors R 1 , R 2 respectively.
  • a sensing resistor R 1 and R 2 are correspondingly arranged, and the pressure sensing unit is a voltage divider circuit formed by connecting two first sensing resistors R 1 and R 2 in the pressure sensing area 11 in series.
  • the output electrical signal will not change; with reference to FIG. 8 and FIG. 9 , when the substrate 10 is deformed by force, due to R 1 When R 2 is arranged on both sides of the substrate 10, different deformations will occur. Tensile strain occurs on the lower surface of the substrate 10, and compressive strain occurs on the upper surface of the substrate 10. The corresponding first sensing resistors R 1 and R 2 form different strains. The resistance value changes, resulting in a change in the electrical signal U o , thereby outputting pressure information. In this way, the pressure sensing unit can independently detect the pressure signal without being affected by the ambient temperature.
  • the second implementation of the pressure sensing unit is: two opposite surfaces of the pressure sensing area 11 are respectively provided with a first sensing resistor R 1 , R 2 , two first sensing resistors R 1 , R 2 , respectively.
  • a sensing resistor R 1 and R 2 are correspondingly arranged, and the pressure sensing unit is a shunt circuit formed by the parallel connection of two first sensing resistors R 1 and R 2 located in the pressure sensing area 11 .
  • a constant current source is used, the input current I is applied to both ends of I+ and I-, and the output current I 1 on the R 1 branch is measured.
  • the output electrical signal will not change; with reference to FIG. 8 and FIG. 9 , when the substrate 10 is deformed by force, due to R 1 When R 2 is arranged on both sides of the substrate 10, different deformations will occur. Tensile strain occurs on the lower surface of the substrate 10, and compressive strain occurs on the upper surface of the substrate 10. The corresponding first sensing resistors R 1 and R 2 form different strains. The resistance value changes, resulting in a change in the electrical signal I1, thereby outputting pressure information. In this way, the pressure sensing unit can independently detect the pressure signal without being affected by the ambient temperature.
  • the third implementation of the pressure sensing unit is: two opposite surfaces of the pressure sensing area 11 are respectively provided with a first sensing resistor R 1 , R 2 , two first sensing resistors R 1 , R 2 A sensing resistor R 1 and R 2 are correspondingly arranged, and the pressure sensing unit is a bridge circuit formed by electrically connecting two reference resistors R0 and two first sensing resistors located in the pressure sensing area 11 .
  • the resistance value of the reference resistor R0 changes very little and can be ignored.
  • the setting position of the reference resistor R0 is not limited.
  • the reference resistor R0 , the first sensing resistors R 1 and R 2 corresponding to each other are set in the same pressure sensing area 11 .
  • the output electrical signal will not change; with reference to FIG. 8 and FIG. 9 , when the substrate 10 is deformed by force, due to R 1 When R 2 is arranged on both sides of the substrate 10, different deformations will occur. Tensile strain occurs on the lower surface of the substrate 10, and compressive strain occurs on the upper surface of the substrate 10. The corresponding first sensing resistors R 1 and R 2 form different shapes. The resistance value changes, resulting in a change in the electrical signal U o , thereby outputting pressure information. In this way, the pressure sensing unit can independently detect the pressure signal without being affected by the ambient temperature.
  • the fourth implementation of the pressure sensing unit is: two first sensing resistors are respectively provided on two opposite surfaces of the pressure sensing area 11 , R 1 and R 4 are on the same surface, and R 2 and R 2 are on the same surface. R 3 is on the other surface, and every two first sensing resistors are correspondingly arranged, R 1 corresponds to R 2 , R 4 corresponds to R 3 , and the pressure sensing unit is composed of four first sensing resistors R 1 located in the pressure sensing area 11.
  • R 2 , R 3 , R 4 are electrically connected to form a bridge circuit, the two first sensing resistors located on the same surface of the pressure sensing area 11 are used as one pair of opposite bridge arms of the bridge circuit, and R 1 and R 4 are used as A pair of opposite bridge arms, R 4 and R 3 as another pair of opposite bridge arms.
  • the output electrical signal will not change; with reference to FIG. 10 and FIG. 11 , when the substrate 10 is stressed During deformation, since R 1 and R 4 are arranged on the same surface of the substrate 10, and R 2 and R 3 are arranged on the other surface of the substrate 10, the two surfaces will have different deformations, and the lower surface of the substrate 10 will have tensile strain, Compressive strain occurs on the upper surface of the substrate 10, and the corresponding first sensing resistors form different resistance changes, resulting in changes in the electrical signal U o , thereby outputting pressure information. In this way, the pressure sensing unit can independently detect the pressure signal without being affected by the ambient temperature.
  • the fifth implementation of the pressure sensing unit is: two opposite surfaces of the pressure sensing area are respectively provided with a first sensing resistor R 1 (R 2 ), two first sensing resistors R 1 (R 2 ) A sensing resistor is provided correspondingly, and the pressure sensing unit includes a third resistance measuring circuit for measuring the resistance of one of the first sensing resistors R 1 and a fourth resistance measuring circuit for measuring the resistance of the other first sensing resistor R 2 circuit.
  • the resistance values of the two resistors change by the same amount; with reference to FIG. 8 and FIG. 9 , when the substrate 10 is deformed by force, due to R 1 and R 2 are arranged on both sides of the substrate 10, which will produce different deformations. Tensile strain occurs on the lower surface of the substrate 10, and compressive strain occurs on the upper surface of the substrate 10. R 1 and R 2 form different resistance changes.
  • the third resistance measurement circuit and the fourth resistance measurement circuit obtain different resistance value changes, and the pressure information is obtained by comparing the difference in the resistance value changes of R 1 and R 2 . In this way, the pressure sensing unit can independently detect the pressure signal without being affected by the ambient temperature.
  • the third resistance measurement circuit and the fourth resistance measurement circuit can be realized in various ways, such as resistance measurement by ohmmeter, resistance measurement by voltammetry, resistance measurement by RC circuit, resistance measurement by RC oscillator circuit, resistance measurement by RLC parallel resonance circuit, etc. method, as required.
  • resistance measurement by ohmmeter resistance measurement by voltammetry
  • resistance measurement by RC circuit resistance measurement by RC oscillator circuit
  • resistance measurement by RLC parallel resonance circuit etc. method, as required.
  • one of the implementations is selected and then combined, so as to realize various optional solutions for separately detecting temperature and pressure.
  • one of the pressure sensing regions 11 is disposed adjacent to one of the temperature sensing regions 12 .
  • the substrate 10 when in use, the substrate 10 is placed on the to-be-detected 200 , the substrate 10 can follow the deformation of the to-be-detected 200 , the pressure sensing unit can detect the force and deformation of the substrate 10 , and the temperature sensing The unit can detect the temperature change of the substrate 10, so as to realize the detection of temperature and pressure in a short distance, and it is convenient to use.
  • At least a part of one of the pressure sensing regions and at least a part of one of the temperature sensing regions are arranged to overlap.
  • a part of the pressure sensing area overlaps with a part of the temperature sensing area, or the pressure sensing area completely overlaps the temperature sensing area.
  • the number of pressure sensing areas 11 and the number of temperature sensing areas 12 are both several, one pressure sensing area 11 and one temperature sensing area 12 form one sensing area, and the substrate 10 is formed with several sensing area.
  • the substrate 10 can form multiple sensing areas, and the pressure sensing units and temperature sensing units in different sensing areas can respectively detect pressure information and temperature information at different positions, thereby expanding the sensing area.
  • any first sensing resistor and any second sensing resistor are one of metal film resistors, strain gauge resistors, semiconductor resistors, ceramic resistors, and conductive polymer resistors.
  • the sense resistors are of the same or different type as the respective second sense resistors. All of the above solutions can realize the detection of temperature and pressure at close range.
  • the first sensing resistor and the second sensing resistor may also adopt other types of sensing resistors.
  • first inductive resistor and the second inductive resistor can be prepared by printing, laminating, spin coating, sputtering, or the like.
  • the preparation methods of each of the first inductive resistors and each of the second inductive resistors may be the same or different, and may be selected as required.
  • an embodiment of the present application provides a temperature and pressure sensor 100 , which includes a substrate 10 , a first sensing resistor and a second sensing resistor.
  • the first sensing resistor and the second sensing resistor have different strain coefficients and different resistances. temperature coefficient; the substrate 10 has a pressure sensing area 11 and a temperature sensing area 12;
  • Two opposite surfaces of the pressure sensing area 11 are respectively provided with first sensing resistors, and the first sensing resistors located in the pressure sensing area 11 form a pressure sensing unit;
  • At least one surface of the temperature sensing area 12 is provided with a first sensing resistor and a second sensing resistor adjacent to each other; the first sensing resistor and the second sensing resistor located in the temperature sensing area 12 form a temperature sensing unit.
  • the first sensing resistor and the second sensing resistor may be a single resistor, or a case where the electrical connection of a plurality of resistors is equivalent to a single resistor.
  • the substrate 10 has a pressure sensing area 11 and a temperature sensing area 12 .
  • Two opposite surfaces of the pressure sensing area 11 are respectively provided with first sensing resistors, and these first sensing resistors form a pressure sensing unit.
  • the output electrical signal will not change.
  • the substrate 10 is bent and deformed by force, the first sensing resistors on the two surfaces of the pressure sensing area 11 will deform differently, resulting in different resistance changes, resulting in changes in electrical signals, thereby outputting pressure information.
  • At least one surface of the temperature sensing area 12 is provided with a first sensing resistor and a second sensing resistor, and the first sensing resistor and the second sensing resistor form a temperature sensing unit.
  • the first sensing resistor and the second sensing resistor form a temperature sensing unit.
  • one surface of the temperature sensing area 12 is provided with a first sensing resistor R 5 and a second sensing resistor R 6
  • the other surface of the temperature sensing area 12 is provided with a first sensing resistor R 5 and a second sensing resistor R 6 .
  • a bridge circuit is formed by electrically connecting two first sensing resistors R 5 , R 7 located in the temperature sensing area 12 and two second sensing resistors R 6 , R 8 , and the two first sensing resistors R 5 , R 7 are used as a bridge circuit.
  • the two second sensing resistors R 6 and R 8 serve as the other pair of opposite bridge arms of the bridge circuit.
  • TCR of R 5 and R 7 be K 1
  • TCR of R 6 and R 8 be K 2 .
  • R 5 [K 1 (TT 0 )+1]R 50
  • R 6 [K 2 (TT 0 )+1]R 60
  • R 7 [K 1 (TT 0 )+1]R 70
  • R 8 [K 2 (TT 0 )+1]R 80
  • T 0 is the initial temperature value
  • T is the temperature value at a predetermined time
  • R 50 , R 60 , R 70 , and R 80 are the initial resistance values of different sensing resistors respectively
  • R 5 , R 6 , R 7 , R 8 are the resistance values of different sensing resistors at a predetermined time, respectively.
  • the two first sensing resistors (R 5 , R 7 ) are respectively arranged on different surfaces of the substrate 10, and the two second sensing resistors are The resistors are respectively arranged on different surfaces of the substrate 10 , tensile strain occurs on the lower surface of the substrate 10 , compressive strain occurs on the upper surface of the substrate 10 , and the resistors deform accordingly.
  • the strain coefficients of the first sensing resistors (R 5 , R 7 ) and the second sensing resistors (R 6 , R 8 ) are different, when the quadratic term is discarded, the output electrical signal does not change.
  • the following proves that the output electrical signal of the bridge circuit composed of R 5 , R 6 , R 7 , and R 8 remains unchanged when the pressure F changes, that is, the bridge circuit is not affected by the force and deformation of the substrate 10 , and can be independently temperature signal is detected.
  • the strain coefficient of the first sensing resistor (R 5 , R 7 ) is a
  • the strain coefficient of the second sensing resistor (R 6 , R 8 ) is b
  • the resistance values of R 5 , R 6 , R 7 , R 8 are R, when the substrate 10 is deformed by force, the strains of R 5 and R 6 are e, and the strains of R 7 and R 8 are -e.
  • the temperature sensing unit can independently detect the temperature signal without being affected by the force and deformation of the substrate 10 .
  • an electronic device including the object to be detected 200 and the above-mentioned temperature and pressure sensor 100 .
  • the substrate 10 is abutted on the surface of the object to be detected 200 .
  • the substrate 10 in the temperature and pressure sensor 100 is placed against the object to be detected 200 , so that the substrate 10 can follow the deformation of the object to be detected 200 .
  • the structure Independent detection of pressure and temperature, the structure is small and easy to use.
  • the object to be inspected 200 may be a panel, such as a touch screen with a rigid structure, a display or other electronic devices.
  • a panel such as a touch screen with a rigid structure, a display or other electronic devices.
  • the panel can be a glass plate with a thickness of 1.1mm, and the glass plate itself is designed with a touch screen function; or, the panel can be a 1.6mm-thick LCD liquid crystal display or an OLED display screen; or, the panel can have a touch function and a display function electronic components.
  • the base material 10 may be connected to the surface of the object to be tested 200 by means of sticking, welding or other mechanical connection.
  • the colloid 20 is water glue or double-sided tape.
  • the base material 10 can also be fixed on the to-be-detected piece 200 by welding, and the base material 10 can follow the deformation when the belt detection piece is deformed by force.

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Abstract

一种温度压力传感器(100)及电子设备。温度压力传感器(100)包括基材(10)、第一感应电阻与第二感应电阻。基材(10)具有压力感应区(11)与温度感应区(12)。压力感应区(11)两个相对表面分别设有第一感应电阻(R 1、R 2)并形成压力感应单元。基材(10)在受力弯曲变形时，压力感应区(11)的第一感应电阻(R 1、R 2)将会发生不同变形，形成不同阻值变化，导致电信号产生变化，输出压力信息。温度感应区(12)至少一个表面上设有第一感应电阻(R 3)与第二感应电阻(R 4)并形成温度感应单元。在环境温度改变时，两种感应电阻的电阻温度系数不同，会产生不同的阻值变化，导致电信号产生变化，输出温度信息。压力感应单元与温度感应单元可分别独立检测压力和温度。该温度压力传感器(100)结构体积较小，使用方便。

Description

温度压力传感器及电子设备 技术领域
本申请属于温度与压力检测技术领域，尤其涉及一种温度压力传感器及电子设备。
背景技术
目前，检测温度与压力的装置都是独立的，分别是温度检测装置与压力检测装置。在一些需要检测温度与压力的场合，需要将两种检测装置设置在待检测物体上，这样将会使得结构体积较大，装配使用也不方便。
申请内容
本申请实施例的目的之一在于：提供一种温度压力传感器及电子设备，以解决现有技术需要将温度检测装置与压力检测装置装配到待检测物体上而使结构体积较大、使用不便的技术问题。
本申请实施例采用的技术方案是：
第一方面，提供一种温度压力传感器，包括基材、第一感应电阻与第二感应电阻，所述第一感应电阻与所述第二感应电阻具有相同的应变系数与不同的电阻温度系数；所述基材具有压力感应区与温度感应区；
所述压力感应区的两个相对表面上分别设有所述第一感应电阻，位于所述压力感应区的所述第一感应电阻形成压力感应单元；
所述温度感应区的至少一个表面上相邻设置有所述第一感应电阻与所述第二感应电阻；位于所述温度感应区的所述第一感应电阻与所述第二感应电阻形成温度感应单元。
第二方面，提供了一种温度压力传感器，包括基材、第一感应电阻与第二感应电阻，所述第一感应电阻与所述第二感应电阻具有不同的应变系数与不同的电阻温度系数；所述基材具有压力感应区与温度感应区；
所述压力感应区的两个相对表面上分别设有所述第一感应电阻，位于所述压力感应区的所述第一感应电阻形成压力感应单元；
所述温度感应区的至少一个表面上相邻设置有所述第一感应电阻与所述第二感应电阻；位于所述温度感应区的所述第一感应电阻与所述第二感应电阻形成温度感应单元。
第三方面，提供一种电子设备，包括待检测件及上述的温度压力传感器，所述基材抵设于所述待检测件的表面上。
有益效果
本申请实施例提供的温度压力传感器的有益效果在于：该温度压力传感器中，基材具有压力感应区与温度感应区。压力感应区的两个相对表面分别设有第一感应电阻，这些第 一感应电阻形成压力感应单元。当温度改变时，由于压力感应区上的第一感应电阻具有相同的电阻温度系数，则输出的电信号不会变化。基材在受力弯曲变形时，压力感应区两个表面上的第一感应电阻将会发生不同变形，形成不同的阻值变化，导致电信号产生变化，从而输出压力信息。
温度感应区的至少一个表面上设有第一感应电阻与第二感应电阻，这些第一感应电阻与第二感应电阻形成温度感应单元。在环境温度改变时，由于第一感应电阻与第二感应电阻的电阻温度系数不同，会产生不同的阻值变化，导致电信号产生变化，从而输出温度信息。当基材受力变形时，由于温度感应区同一表面上的第一感应电阻与第二感应电阻相邻设置，具有一致的形变，则输出的电信号基本不会变化。该温度压力传感器中，压力感应单元与温度感应单元可以分别独立检测压力和温度，结构体积较小，使用方便。
本申请实施例提供的电子设备的有益效果在于：该电子设备中，将温度压力传感器中的基材抵设于待检测件，使得基材可跟随待检测件变形，通过温度压力传感器中的压力感应单元与温度感应单元分别独立检测压力和温度，结构体积较小，使用方便。
附图说明
为了更清楚地说明本申请实施例中的技术方案，下面将对实施例或示范性技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其它的附图。
图1为本申请实施例提供的温度压力传感器的结构示意图；
图2为图1的温度压力传感器中的压力感应单元多种实现方式的示意图；
图3为图1的温度压力传感器中的温度感应单元多种实现方式的示意图；
图4为本申请另一实施例提供的温度压力传感器的结构示意图；
图5为本申请实施例提供的温度压力传感器中的压力感应单元的示意图；
图6为本申请实施例提供的温度压力传感器中的温度感应单元的示意图；
图7为本申请另一实施例提供的温度压力传感器的结构示意图；
图8为本申请实施例提供的电子设备的结构示意图；
图9为图8的电子设备在待检测件受力变形时的结构示意图；
图10为本申请另一实施例提供的电子设备的结构示意图；
图11为图10的电子设备在待检测件受力变形时的结构示意图。
具体实施方式
为了使本申请所要解决的技术问题、技术方案及有益效果更加清楚明白，以下结合附 图及实施例，对本申请进行进一步详细说明。应当理解，此处所描述的具体实施例仅仅用以解释本申请，并不用于限定本申请。
在本申请实施例的描述中，需要理解的是，术语“长度”、“宽度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请实施例和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请实施例的限制。
此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个该特征。在本申请的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。
在本申请实施例中，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”、“固定”等术语应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或成一体；可以是机械连接，也可以是电连接；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本申请实施例中的具体含义。
请参阅图1及图2，本申请实施例提供一种温度压力传感器100，包括基材10、第一感应电阻与第二感应电阻。基材10可由具有弹性变形特性的材料制作。第一感应电阻与第二感应电阻具有相同的应变系数与不同的电阻温度系数。基材10具有压力感应区11与温度感应区12，这是以功能对基材10划分的区域。
压力感应区11的两个相对表面上分别设有第一感应电阻，位于压力感应区11的第一感应电阻形成压力感应单元。
温度感应区12的至少一个表面上相邻设置有第一感应电阻与第二感应电阻；位于温度感应区12的第一感应电阻与第二感应电阻形成温度感应单元。第一感应电阻与第二感应电阻可以是单个电阻，或者是多个电阻电连接等同于单个电阻的情况。
其中，这里的应变系数(英文名称：Gage Factor，简称GF)，也就是电阻应变计灵敏系数，即电阻变化率△R/R和引起此电阻变化的构件表面在应变计轴线方向的应变之比。
电阻温度系数(英文名称：temperature coefficient of resistance，简称TCR)，表示电阻当温度改变1℃时，电阻值的相对变化，单位为ppm/℃。电阻温度系数的表达式为：
Figure PCTCN2020116239-appb-000001
其中，K为电阻温度系数；T 0为初始的温度值；T为一预定时刻的温度值；R 0为感应电阻的初始阻值；R为感应电阻在预定时刻的阻值。本申请提供的温度压力传感器100，与相关技术相比，该温度压力传感器100中，基材10具有压力感应区11与温度感应区12。压力感应区11的两个相对表面分别设有第一感应电阻，这些第一感应电阻形成压力感应单元。当温度改变时，由于压力感应区11上的第一感应电阻具有相同的电阻温度系数，则输出的电信号不会变化。基材10在受力弯曲变形时，压力感应区11两个表面上的第一感应电阻将会发生不同变形，形成不同的阻值变化，导致电信号产生变化，从而输出压力信息。
温度感应区12的至少一个表面上设有第一感应电阻与第二感应电阻，这些第一感应电阻与第二感应电阻形成温度感应单元。在环境温度改变时，由于第一感应电阻与第二感应电阻的电阻温度系数不同，会产生不同的阻值变化，导致电信号产生变化，从而输出温度信息。当基材10受力变形时，由于温度感应区12同一表面上的第一感应电阻与第二感应电阻相邻设置，具有一致的形变，则输出的电信号基本不会变化。该温度压力传感器100中，压力感应单元与温度感应单元可以分别独立检测压力和温度，结构体积较小，使用方便。
在设置温度感应单元时有多种可选的实现方式。参阅图1与图3中的(a)，温度感应单元的第一种实现方式是：温度感应区12的其中一个表面上设有一个第一感应电阻R 3与一个第二感应电阻R 4，温度感应单元为由位于温度感应区12的第一感应电阻R 3与第二感应电阻R 4串联形成的分压电路。
采用恒压源，在V+与V-两端加以输入电压U i，检测Vo处的电势，或测量Vo与地之间的输出电压U o，有输入输出电压公式：
Figure PCTCN2020116239-appb-000002
当温度改变时，由于第一感应电阻R 3与第二感应电阻R 4电阻具有不同的电阻温度系数，会产生不同的阻值变化，导致电信号U o产生变化，从而输出温度信息；当基材10受力变形时，由于第一感应电阻R 3与第二感应电阻R 4设置在基材10同一表面相邻位置，具有一致的形变，且应变系数一致，则输出的电信号不会变化。这样温度感应单元就可以不受到基材10受力变形的影响，单独地检测出温度信号。
参阅图1与图3中的(b)，温度感应单元的第二种实现方式是：温度感应区12的其中一个表面上设有一个第一感应电阻R 3与一个第二感应电阻R 4，温度感应单元为由位于温度感应区12的第一感应电阻R 3与第二感应电阻R 4并联形成的分流电路。
采用恒流源，在I+与I-两端加以输入电流I，测量R 3支路上的输出电流I3，有输入输出电流公式：
Figure PCTCN2020116239-appb-000003
当温度改变时，由于第一感应电阻R 3与第二感应电阻R 4电阻具有不同的电阻温度系数，会产生不同的阻值变化，导致电信号I 3产生变化，从而输出温度信息；当基材10受力变形时，由于第一感应电阻R 3与第二感应电阻R 4设置在基材10同一表面相邻位置，具有一致的形变，且应变系数一致，则输出的电信号不会变化。这样温度感应单元就可以不受到基材10受力变形的影响，单独地检测出温度信号。
参阅图1与图3中的(c)，温度感应单元的第三种实现方式是：温度感应区12的其中一个表面上设有一个第一感应电阻R 3与一个第二感应电阻R 4，温度感应单元为由两个参考电阻R0、位于温度感应区12的第一感应电阻R 3与第二感应电阻R 4电连接形成的电桥电路，第一感应电阻R 3与第二感应电阻R 4串联在一条支路上。在环境温度变化或弯曲变形后，参考电阻R0的阻值变化极小，可忽略不计。参考电阻R0的设置位置不限定，比如对应的参考电阻、第一感应电阻R 3与第二感应电阻R 4设置在同一个温度感应区12内。
在由两个参考电阻R0、第一感应电阻R 3与第二感应电阻R 4组成的电桥电路中，输入电压U i，在Vm+与Vm-两端得到输出电压U o，有输入输出电压公式：
Figure PCTCN2020116239-appb-000004
当温度改变时，由于第一感应电阻R 3与第二感应电阻R 4电阻具有不同的电阻温度系数，会产生不同的阻值变化，导致电信号U o产生变化，从而输出温度信息；当基材10受力变形时，由于第一感应电阻R 3与第二感应电阻R 4设置在基材10同一表面相邻位置，具有一致的形变，且应变系数一致，则输出的电信号不会变化。这样温度感应单元就可以不受到基材10受力变形的影响，单独地检测出温度信号。
参阅图4与图6，温度感应单元的第四种实现方式是：温度感应区12的其中一个表面上设有两个第一感应电阻(R 5、R 7)与两个第二感应电阻(R 6、R 8)，温度感应单元为位于温度 感应区12的两个第一感应电阻(R 5、R 7)与两个第二感应电阻(R 6、R 8)电连接形成的电桥电路，两个第一感应电阻(R 5、R 7)作为电桥电路的其中一对相对桥臂，两个第二感应电阻(R 6、R 8)作为电桥电路的另外一对相对桥臂。
在由两个第一感应电阻(R 5、R 7)与两个第二感应电阻(R 6、R 8)组成的电桥电路中，输入电压U i，在Vm+与Vm-两端得到输出电压U o，有输入输出电压公式：
Figure PCTCN2020116239-appb-000005
当温度改变时，由于第一感应电阻(R 5、R 7)与第二感应电阻(R 6、R 8)具有不同的电阻温度系数，会产生不同的阻值变化，导致电信号U o产生变化，从而输出温度信息；当基材10受力变形时，由于第一感应电阻(R 5、R 7)与第二感应电阻(R 6、R 8)设置在基材10同一表面相邻位置，具有一致的形变，且应变系数一致，则输出的电信号不会变化。这样温度感应单元就可以不受到基材10受力变形的影响，单独地检测出温度信号。
参阅图6与图7，温度感应单元的第五种实现方式是：温度感应区12的其中一个表面上设有一个第一感应电阻R 5与一个第二感应电阻R 6，温度感应区12的另外一个表面上设有一个第一感应电阻R 7与一个第二感应电阻R 8，两个第一感应电阻(R 5、R 7)对应设置，两个第二感应电阻(R 6、R 8)对应设置，温度感应单元为由位于温度感应区12的两个第一感应电阻与两个第二感应电阻电连接形成的电桥电路，两个第一感应电阻(R 5、R 7)作为电桥电路的其中一对相对桥臂，两个第二感应电阻(R 6、R 8)作为电桥电路的另外一对相对桥臂。
在由两个第一感应电阻(R 5、R 7)与两个第二感应电阻(R 6、R 8)组成的电桥电路中，输入电压U i，在Vm+与Vm-两端得到输出电压U o，有输入输出电压公式：
Figure PCTCN2020116239-appb-000006
当温度改变时，由于第一感应电阻(R 5、R 7)与第二感应电阻(R 6、R 8)具有不同的电阻温度系数，会产生不同的阻值变化，导致电信号U o产生变化，从而输出温度信息；当基材10受力变形时，由于第一感应电阻(R 5、R 7)设置在基材10两个表面相邻位置，第二感应电阻(R 6、R 8)设置在基材10不同表面相邻位置，同一表面的电阻具有一致的形变，不同表面的电阻的形变不同，各个电阻的应变系数一致，则输出的电信号不会变化。这样温度感应单元就可以不受到基材10受力变形的影响，单独地检测出温度信号。
参阅图1与图3中的(d)，温度感应单元的第六种实现方式是：温度感应区的其中一 个表面上设有第一感应电阻R 3与第二感应电阻R 4，温度感应单元包括用于测量第一感应电阻R 3的阻值的第一电阻测量电路与用于测量第二感应电阻R 4的阻值的第二电阻测量电路。
当温度改变时，由于第一感应电阻R 3与第二感应电阻R 4具有不同的电阻温度系数，会产生不同的阻值变化，通过第一电阻测量电路与第二电阻测量电路获得阻值变化，通过比较R 3与R 4阻值变化量的差异，即可获知温度信息。当基材10受力变形时，由于第一感应电阻R 3与第二感应电阻R 4设置在基材10同一表面相邻位置，具有一致的形变，且应变系数一致，则R 3与R 4阻值变化量相等。这样温度感应单元就可以不受到基材10受力变形的影响，单独地检测出温度信号。
其中，第一电阻测量电路、第二电阻测量电路又有多种实现方式，比如，欧姆表测电阻、伏安法测电阻、RC电路测电阻、RC振荡电路测电阻、RLC并联谐振电路测电阻等方式，按需选用。欧姆表测电阻与伏安法测电阻为直接测量电阻的方式，相应的电阻测量电路属于常规技术。
RC电路可以是如图3中的(e)所示的RC串联电路，还可以是如图3中的(f)所示的RC并联电路。通过对RC电路充放电，可测量RC电路的时间常数τ。该RC电路的时间常数为：
τ＝RC
依据上述公式，已知电容的电容量C，则可以通过测量到的时间常数τ反算出电阻阻值R。这里，RC电路中的电阻R就是第一感应电阻R 3或第二感应电阻R 4。
如图3中的(g)所示，RC振荡电路是将RC串并联选频网络和放大器结合起来，放大器可采用集成运算放大器。RC串并联选频网络接在运算放大器的输出端和同相输入端之间，构成正反馈，R F、R’接在运算放大器的输出端和反相输入端之间，构成负反馈。正反馈电路和负反馈电路构成一文氏电桥振荡电路，运算放大器的输入端和输出端分别跨接在电桥的两对角线上。该文氏电桥振荡电路的输出频率为：
Figure PCTCN2020116239-appb-000007
频率f 0对电阻阻值R的变化非常敏感。依据上述公式，已知电容的电容量C，则可以通过测量到的频率f 0反算出电阻阻值R。这里，RC串并联选频网络中的电阻R就是第一感应电阻R 3或第二感应电阻R 4。
如图3中的(h)所示，RLC并联谐振电路是将RL串联电路和电容器C并联的电路。该RLC并联谐振电路的角频率为：
Figure PCTCN2020116239-appb-000008
依据上述公式，已知电感的电感量L和电容的电容量C，则可以通过测量出的角频率ω反算出电阻阻值R。这里，RLC并联谐振电路中的电阻R就是第一感应电阻R 3或第二感应电阻R 4。
在设置压力感应单元时有多种可选的实现方式。参阅图1与图2中的(a)，压力感应单元的第一种实现方式是：压力感应区11的两个相对表面上分别设有一个第一感应电阻R 1、R 2，两个第一感应电阻R 1、R 2对应设置，压力感应单元为由位于压力感应区11的两个第一感应电阻R 1、R 2串联形成的分压电路。
采用恒压源，在V+与V-两端加以输入电压U i，检测Vo处的电势，或测量Vo与地之间的输出电压U o，有输入输出电压公式：
Figure PCTCN2020116239-appb-000009
当温度改变时，由于第一感应电阻R 1和R 2具有相同的电阻温度系数，则输出的电信号不会变化；结合图8、图9，当基材10受力变形时，由于R 1与R 2设置在基材10两侧，会产生不同的形变，基材10下表面发生拉伸应变，基材10上表面发生压缩应变，对应的第一感应电阻R 1和R 2形成不同的阻值变化，导致电信号U o产生变化，从而输出压力信息。这样压力感应单元就可以不受到环境温度的影响，单独地检测出压力信号。
参阅图1与图2中的(b)，压力感应单元的第二种实现方式是：压力感应区11的两个相对表面上分别设有一个第一感应电阻R 1、R 2，两个第一感应电阻R 1、R 2对应设置，压力感应单元为由位于压力感应区11的两个第一感应电阻R 1、R 2并联形成的分流电路。
采用恒流源，在I+与I-两端加以输入电流I，测量R 1支路上的输出电流I 1，有输入输出电流公式：
Figure PCTCN2020116239-appb-000010
当温度改变时，由于第一感应电阻R 1和R 2具有相同的电阻温度系数，则输出的电信号不会变化；结合图8、图9，当基材10受力变形时，由于R 1与R 2设置在基材10两侧，会产生不同的形变，基材10下表面发生拉伸应变，基材10上表面发生压缩应变，对应的 第一感应电阻R 1和R 2形成不同的阻值变化，导致电信号I1产生变化，从而输出压力信息。这样压力感应单元就可以不受到环境温度的影响，单独地检测出压力信号。
参阅图1与图2中的(c)，压力感应单元的第三种实现方式是：压力感应区11的两个相对表面上分别设有一个第一感应电阻R 1、R 2，两个第一感应电阻R 1、R 2对应设置，压力感应单元为由两个参考电阻R0与位于压力感应区11的两个第一感应电阻电连接形成的电桥电路。在环境温度变化或弯曲变形后，参考电阻R0的阻值变化极小，可忽略不计。上述参考电阻R0的设置位置不限定，比如相互对应的参考电阻R0、第一感应电阻R 1、R 2设置在同一个压力感应区11内。
在由两个参考电阻R0与两个第一感应电阻(R 1、R 2)组成的电桥电路中，输入电压U i，在Vm+与Vm-两端得到输出电压U o，有输入输出电压公式：
Figure PCTCN2020116239-appb-000011
当温度改变时，由于第一感应电阻R 1和R 2具有相同的电阻温度系数，则输出的电信号不会变化；结合图8、图9，当基材10受力变形时，由于R 1与R 2设置在基材10两侧，会产生不同的形变，基材10下表面发生拉伸应变，基材10上表面发生压缩应变，对应的第一感应电阻R 1、R 2形成不同的阻值变化，导致电信号U o产生变化，从而输出压力信息。这样压力感应单元就可以不受到环境温度的影响，单独地检测出压力信号。
参阅图4、图5，压力感应单元的第四种实现方式是：压力感应区11的两个相对表面上分别设有两个第一感应电阻，R 1与R 4在同一表面，R 2与R 3在另一表面，每两个第一感应电阻对应设置，R 1与R 2对应，R 4与R 3对应，压力感应单元为由位于压力感应区11的四个第一感应电阻R 1、R 2、R 3、R 4电连接形成的电桥电路，位于压力感应区11同一表面上的两个第一感应电阻作为电桥电路的其中一对相对桥臂，R 1与R 4作为一对相对桥臂，R 4与R 3作为另一对相对桥臂。
在由第一感应电阻R 1、R 2、R 3、R 4组成的电桥电路中，输入电压U i，在Vm+与Vm-两端得到输出电压U o，有输入输出电压公式：
Figure PCTCN2020116239-appb-000012
当温度改变时，由于第一感应电阻R 1、R 2、R 3、R 4具有相同的电阻温度系数，则输出的电信号不会变化；结合图10、图11，当基材10受力变形时，由于R 1与R 4设置在基材 10同一表面，R 2与R 3设置在基材10另一表面，两个表面会产生不同的形变，基材10下表面发生拉伸应变，基材10上表面发生压缩应变，对应的第一感应电阻形成不同的阻值变化，导致电信号U o产生变化，从而输出压力信息。这样压力感应单元就可以不受到环境温度的影响，单独地检测出压力信号。
参阅图1与图2中的(d)，压力感应单元的第五种实现方式是：压力感应区的两个相对表面上分别设有一个第一感应电阻R 1(R 2)，两个第一感应电阻对应设置，压力感应单元包括用于测量其中一个第一感应电阻R 1的阻值的第三电阻测量电路与用于测量另外一个第一感应电阻R 2的阻值的第四电阻测量电路。
当温度改变时，由于第一感应电阻R 1和R 2具有相同的电阻温度系数，则两电阻阻值的变化量相同；结合图8、图9，当基材10受力变形时，由于R 1与R 2设置在基材10两侧，会产生不同的形变，基材10下表面发生拉伸应变，基材10上表面发生压缩应变，R 1和R 2形成不同的阻值变化，通过第三电阻测量电路与第四电阻测量电路获得不同的阻值变化量，通过比较R 1和R 2阻值变化量的差异，从而获得压力信息。这样压力感应单元就可以不受到环境温度的影响，单独地检测出压力信号。
其中，第三电阻测量电路与第四电阻测量电路有多种实现方式，比如，欧姆表测电阻、伏安法测电阻、RC电路测电阻、RC振荡电路测电阻、RLC并联谐振电路测电阻等方式，按需选用。具体实现方式可参阅前面第一电阻测量电路与第二电阻测量电路的相关记载。
可以理解的是，上述温度感应单元与压力感应单元的多种实现方式分别选择其中一种实现方式再进行组合，从而实现分别单独地检测出温度和压力的多种可选方案。
在本申请另一实施例中，其中一个压力感应区11与其中一个温度感应区12相邻设置。参阅图8、图9，在使用时，将基材10抵设于待检测200上，基材10可跟随待检测件200变形，压力感应单元可检测基材10的受力变形情况，温度感应单元可检测基材10的温度变化情况，从而实现近距离温度与压力的检测，使用方便。
在本申请另一实施例中，其中一个压力感应区的至少一部分与其中一个温度感应区的至少一部分重叠设置。压力感应区的其中一部分与温度感应区的其中一部分重叠，或者，压力感应区与温度感应区完全重叠。上述方案均能实现近距离温度与压力的检测。
在本申请另一实施例中，压力感应区11的数量与温度感应区12的数量均为若干个，一个压力感应区11与一个温度感应区12组成一个感应区域，基材10形成有若干个感应区域。采用这个方案，可使得基材10形成多个感应区域，分别通过不同感应区域内的压力感应单元与温度感应单元去检测不同位置压力信息与温度信息，扩大检测区域。
在本申请另一实施例中，任一第一感应电阻与任一第二感应电阻为金属膜电阻、应变 片电阻、半导体电阻、陶瓷电阻、导电高分子电阻中的其中一种，各个第一感应电阻与各个第二感应电阻的类型相同或不同。上述方案均能实现近距离温度与压力的检测。此外，第一感应电阻与第二感应电阻还可以采用其他类型的感应电阻。
此外，第一感应电阻与第二感应电阻可以通过印刷、贴合、旋涂、溅射等方式制备。各个第一感应电阻与各个第二感应电阻的制备方式可以相同或不同，按需选用。
请参阅图7，本申请实施例提供一种温度压力传感器100，包括基材10、第一感应电阻与第二感应电阻，第一感应电阻与第二感应电阻具有不同的应变系数与不同的电阻温度系数；基材10具有压力感应区11与温度感应区12；
压力感应区11的两个相对表面上分别设有第一感应电阻，位于压力感应区11的第一感应电阻形成压力感应单元；
温度感应区12的至少一个表面上相邻设置有第一感应电阻与第二感应电阻；位于温度感应区12的第一感应电阻与第二感应电阻形成温度感应单元。第一感应电阻与第二感应电阻可以是单个电阻，或者是多个电阻电连接等同于单个电阻的情况。
本申请提供的温度压力传感器100，与相关技术相比，该温度压力传感器100中，基材10具有压力感应区11与温度感应区12。压力感应区11的两个相对表面分别设有第一感应电阻，这些第一感应电阻形成压力感应单元。当温度改变时，由于压力感应区11上的第一感应电阻具有相同的电阻温度系数，则输出的电信号不会变化。基材10在受力弯曲变形时，压力感应区11两个表面上的第一感应电阻将会发生不同变形，形成不同的阻值变化，导致电信号产生变化，从而输出压力信息。
温度感应区12的至少一个表面上设有第一感应电阻与第二感应电阻，这些第一感应电阻与第二感应电阻形成温度感应单元。在环境温度改变时，由于第一感应电阻与第二感应电阻的电阻温度系数不同，会产生不同的阻值变化，导致电信号产生变化，从而输出温度信息。当基材10受力变形时，由于温度感应区12同一表面上的第一感应电阻与第二感应电阻相邻设置，具有一致的形变，则输出的电信号基本不会变化。该温度压力传感器100中，压力感应单元与温度感应单元可以分别独立检测压力和温度，结构体积较小，使用方便。
在设置温度感应单元时，参阅图6、图7，温度感应区12的其中一个表面上设有一个第一感应电阻R 5与一个第二感应电阻R 6，温度感应区12的另外一个表面上设有一个第一感应电阻R 7与一个第二感应电阻R 8，两个第一感应电阻R 5、R 7对应设置，两个第二感应电阻R 6、R 8对应设置，温度感应单元为由位于温度感应区12的两个第一感应电阻R 5、R 7与两个第二感应电阻R 6、R 8电连接形成的电桥电路，两个第一感应电阻R 5、R 7作为电桥 电路的其中一对相对桥臂，两个第二感应电阻R 6、R 8作为电桥电路的另外一对相对桥臂。
在由两个第一感应电阻(R 5、R 7)与两个第二感应电阻(R 6、R 8)组成的电桥电路中，输入电压U i，在Vm+与Vm-两端得到输出电压U o，有输入输出电压公式：
Figure PCTCN2020116239-appb-000013
设R 5、R 7的TCR为K 1，R 6、R 8的TCR为K 2。
依据前面提到的电阻温度系数的表达式，有：
R 5＝[K 1(T-T 0)+1]R 50
R 6＝[K 2(T-T 0)+1]R 60
R 7＝[K 1(T-T 0)+1]R 70
R 8＝[K 2(T-T 0)+1]R 80
其中，T 0为初始的温度值；T为一预定时刻的温度值；R 50、R 60、R 70、R 80分别为不同感应电阻的初始阻值；R 5、R 6、R 7、R 8分别为不同感应电阻在预定时刻的阻值。
结合上述输入输出电压公式，有：
Figure PCTCN2020116239-appb-000014
这是U 0、T与TCR之间的数学关系。
当温度改变时，由于第一感应电阻(R 5、R 7)与第二感应电阻(R 6、R 8)具有不同的电阻温度系数，会产生不同的阻值变化，导致电信号U o产生变化，从而输出温度信息；结合图10、图11，当基材10受力变形时，两个第一感应电阻(R 5、R 7)分别设置在基材10不同表面，两个第二感应电阻分别设置在基材10不同表面，基材10下表面发生拉伸应变，基材10上表面发生压缩应变，电阻发生相应变形。虽然第一感应电阻(R 5、R 7)与第二感应电阻(R 6、R 8)的应变系数不同，但是在舍弃二次项的情况下，输出的电信号不会变化。下面证明由R 5、R 6、R 7、R 8组成的电桥电路在压力F变化时，输出的电信号不变，即该电桥电路不 受到基材10受力变形的影响，可单独地检测出温度信号。
假设第一感应电阻(R 5、R 7)的应变系数为a，第二感应电阻(R 6、R 8)的应变系数为b，R 5、R 6、R 7、R 8的阻值为R，基材10受力变形时，R 5、R 6的应变为e，R 7、R 8的应变为-e。
在基材10受力变形之前，U1＝U2＝U/2，要证明信号输出不变，则需证明施加压力F时U1＝U2。
U1＝U*R 6/(R 5+R 6)
＝U*{R(1+eb)}/{R(2+eb+ea)}
＝U(1+eb)/(2+eb+ea)
＝U(2-ea-eb+2eb-eeab-eebb)/{(2+eb+ea)(2-ea-eb)}
＝U(2+eb-ea–e 2b(a+b))/{(2+eb+ea)(2-ea-eb)}
U2＝U*R 7/(R 7+R 8)
＝U*{R(1-ea)}/{R(2-ea-eb)}
＝U(1-ea)/(2-ea-eb)
＝U(2+eb+ea-2ea-eeab-eeaa)/{(2+eb+ea)(2-ea-eb)}
＝U(2+eb-ea-e 2a(a+b))/{(2+eb+ea)(2-ea-eb)}
由于e 2为分子中二次项，e为很小的值，可舍去，因此U1＝U2。
这样温度感应单元就可以不受到基材10受力变形的影响，单独地检测出温度信号。
在设置压力感应单元时有多种可选的实现方式，具体可参照上述压力感应单元的多种实现方式，具体按需选用。
请参阅图8至图11，在本申请另一实施例中，提供一种电子设备，包括待检测件200及上述的温度压力传感器100，基材10抵设于待检测件200的表面上。该电子设备中，将温度压力传感器100中的基材10抵设于待检测件200，使得基材10可跟随待检测件200变形，通过温度压力传感器100中的压力感应单元与温度感应单元分别独立检测压力和温度，结构体积较小，使用方便。
在一个实施例中，待检测件200可以是面板，比如是具有刚性结构的触摸屏、显示器或其他电子设备。通过将基材10与待检测件200连接，能够在实现精准识别触控位置的同时精准识别触控压力的大小以及环境温度，为电子设备在产品应用、人机交互及消费体验上扩展了应用空间。用户通过触按触摸屏、显示器或电子设备，可以直接获得精确地压力级别及量数。具体地，面板可以为1.1mm厚度的玻璃板，玻璃板自身设计有触摸屏的功能； 或者，面板可以为1.6mm厚的LCD液晶显示器或OLED显示屏；或者，面板可以为具有触摸功能和显示功能的电子组件。
其中，基材10可以采用粘贴、焊接或其它机械连接方式连接于待检测件200的表面上。在使用胶体20粘贴时，即贴即用，使用方便，简化装配工序，方便返工。胶体20为水胶或双面胶。采用焊接方式也可将基材10固定在待检测件200上，并在带检测件受力变形时基材10可跟随变形。
以上仅为本申请的可选实施例而已，并不用于限制本申请。对于本领域的技术人员来说，本申请可以有各种更改和变化。凡在本申请的精神和原则之内，所作的任何修改、等同替换、改进等，均应包含在本申请的权利要求范围之内。

Claims (10)

  1. 一种温度压力传感器，其特征在于，包括基材、第一感应电阻与第二感应电阻，所述第一感应电阻与所述第二感应电阻具有相同的应变系数与不同的电阻温度系数；所述基材具有压力感应区与温度感应区；
    所述压力感应区的两个相对表面上分别设有所述第一感应电阻，位于所述压力感应区的所述第一感应电阻形成压力感应单元；
    所述温度感应区的至少一个表面上相邻设置有所述第一感应电阻与所述第二感应电阻；位于所述温度感应区的所述第一感应电阻与所述第二感应电阻形成温度感应单元。
  2. 如权利要求1所述的温度压力传感器，其特征在于，所述温度感应区的其中一个表面上设有所述第一感应电阻与所述第二感应电阻，所述温度感应单元为由位于所述温度感应区的所述第一感应电阻与所述第二感应电阻串联形成的分压电路；
    或者，所述温度感应区的其中一个表面上设有所述第一感应电阻与所述第二感应电阻，所述温度感应单元为由位于所述温度感应区的所述第一感应电阻与所述第二感应电阻并联形成的分流电路；
    或者，所述温度感应区的其中一个表面上设有所述第一感应电阻与所述第二感应电阻，所述温度感应单元为由两个参考电阻、位于所述温度感应区的所述第一感应电阻与所述第二感应电阻电连接形成的电桥电路；
    或者，所述温度感应区的其中一个表面上设有两个所述第一感应电阻与两个所述第二感应电阻，所述温度感应单元为位于所述温度感应区的两个所述第一感应电阻与两个所述第二感应电阻电连接形成的电桥电路，两个所述第一感应电阻作为所述电桥电路的其中一对相对桥臂，两个所述第二感应电阻作为所述电桥电路的另外一对相对桥臂；
    或者，所述温度感应区的其中一个表面上设有一个所述第一感应电阻与一个所述第二感应电阻，所述温度感应区的另外一个表面上设有一个所述第一感应电阻与一个所述第二感应电阻，两个所述第一感应电阻对应设置，两个所述第二感应电阻对应设置，所述温度感应单元为由位于所述温度感应区的两个所述第一感应电阻与两个所述第二感应电阻电连接形成的电桥电路，两个所述第一感应电阻作为所述电桥电路的其中一对相对桥臂，两个所述第二感应电阻作为所述电桥电路的另外一对相对桥臂；
    或者，所述温度感应区的其中一个表面上设有所述第一感应电阻与所述第二感应电阻，所述温度感应单元包括用于测量所述第一感应电阻的阻值的第一电阻测量电路与用于测量所述第二感应电阻的阻值的第二电阻测量电路。
  3. 一种温度压力传感器，其特征在于，包括基材、第一感应电阻与第二感应电阻，所述第一感应电阻与所述第二感应电阻具有不同的应变系数与不同的电阻温度系数；所述基材具有压力感应区与温度感应区；
    所述压力感应区的两个相对表面上分别设有所述第一感应电阻，位于所述压力感应区的所述第一感应电阻形成压力感应单元；
    所述温度感应区的至少一个表面上相邻设置有所述第一感应电阻与所述第二感应电阻；位于所述温度感应区的所述第一感应电阻与所述第二感应电阻形成温度感应单元。
  4. 如权利要求3所述的温度压力传感器，其特征在于，所述温度感应区的其中一个表面上设有一个所述第一感应电阻与一个所述第二感应电阻，所述温度感应区的另外一个表面上设有一个所述第一感应电阻与一个所述第二感应电阻，两个所述第一感应电阻对应设置，两个所述第二感应电阻对应设置，所述温度感应单元为由位于所述温度感应区的两个所述第一感应电阻与两个所述第二感应电阻电连接形成的电桥电路，两个所述第一感应电阻作为所述电桥电路的其中一对相对桥臂，两个所述第二感应电阻作为所述电桥电路的另外一对相对桥臂。
  5. 如权利要求1至4任一项所述的温度压力传感器，其特征在于，所述压力感应区的两个相对表面上分别设有一个所述第一感应电阻，两个所述第一感应电阻对应设置，所述压力感应单元为由位于所述压力感应区的两个所述第一感应电阻串联形成的分压电路；
    或者，所述压力感应区的两个相对表面上分别设有一个所述第一感应电阻，两个所述第一感应电阻对应设置，所述压力感应单元为由位于所述压力感应区的两个所述第一感应电阻并联形成的分流电路；
    或者，所述压力感应区的两个相对表面上分别设有一个所述第一感应电阻，两个所述第一感应电阻对应设置，所述压力感应单元为由两个参考电阻与位于所述压力感应区的两个所述第一感应电阻电连接形成的电桥电路；
    或者，所述压力感应区的两个相对表面上分别设有两个所述第一感应电阻，每两个所述第一感应电阻对应设置，所述压力感应单元为由位于所述压力感应区的四个所述第一感应电阻电连接形成的电桥电路，位于所述压力感应区同一表面上的两个所述第一感应电阻作为所述电桥电路的其中一对相对桥臂；
    或者，所述压力感应区的两个相对表面上分别设有一个所述第一感应电阻，两个所述第一感应电阻对应设置，所述压力感应单元包括用于测量其中一个所述第一感应电阻的阻值的第三电阻测量电路与用于测量另外一个所述第一感应电阻的阻值的第四电阻测量电路。
  6. 如权利要求1至4任一项所述的温度压力传感器，其特征在于，其中一个所述压力感应区与其中一个所述温度感应区相邻设置；
    或者，其中一个所述压力感应区的至少一部分与其中一个所述温度感应区的至少一部分重叠设置。
  7. 如权利要求1至4任一项所述的温度压力传感器，其特征在于，所述压力感应区的数量与所述温度感应区的数量均为若干个，一个所述压力感应区与一个所述温度感应区组成一个感应区域，所述基材形成有若干个所述感应区域。
  8. 如权利要求1至4任一项所述的温度压力传感器，其特征在于，任一所述第一感应电阻与任一所述第二感应电阻为金属膜电阻、应变片电阻、半导体电阻、陶瓷电阻、导电高分子电阻中的其中一种，各个所述第一感应电阻与各个所述第二感应电阻的类型相同或不同。
  9. 一种电子设备，其特征在于，包括待检测件及如权利要求1至8任一项所述的温度压力传感器，所述基材抵设于所述待检测件的表面上。
  10. 如权利要求9所述的电子设备，其特征在于，所述基材粘贴于所述待检测件的表面上；或者，所述基材焊接于所述待检测件的表面上。
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