WO2021157720A1 - 半導体素子および半導体装置 - Google Patents

半導体素子および半導体装置 Download PDF

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WO2021157720A1
WO2021157720A1 PCT/JP2021/004412 JP2021004412W WO2021157720A1 WO 2021157720 A1 WO2021157720 A1 WO 2021157720A1 JP 2021004412 W JP2021004412 W JP 2021004412W WO 2021157720 A1 WO2021157720 A1 WO 2021157720A1
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semiconductor
semiconductor element
oxide
layer
substrate
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English (en)
French (fr)
Japanese (ja)
Inventor
佑典 松原
修 今藤
裕之 安藤
竹原　秀樹
四戸　孝
沖川　満
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Flosfia Inc
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Flosfia Inc
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Priority to CN202180013128.XA priority Critical patent/CN115053354A/zh
Priority to JP2021576196A priority patent/JP7807628B2/ja
Priority to KR1020227030569A priority patent/KR20220136416A/ko
Publication of WO2021157720A1 publication Critical patent/WO2021157720A1/ja
Priority to US17/882,148 priority patent/US12453108B2/en
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    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/65—Lateral DMOS [LDMOS] FETs
    • H10D30/657—Lateral DMOS [LDMOS] FETs having substrates comprising insulating layers, e.g. SOI-LDMOS transistors
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    • H10W90/763—Package configurations characterised by the relative positions of pads or connectors relative to package parts of strap connectors between laterally-adjacent chips
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Definitions

  • the present invention relates to a semiconductor element useful as a power device or the like, a semiconductor device using the semiconductor element, and a semiconductor system.
  • Gallium oxide (Ga 2 O 3 ) is a transparent semiconductor that has a wide bandgap of 4.8-5.3 eV at room temperature and hardly absorbs visible light and ultraviolet light. Therefore, it is a promising material especially for use in optical / electronic devices and transparent electronics operating in the deep ultraviolet light region, and in recent years, a photodetector based on gallium oxide (Ga 2 O 3). Light emitting diodes (LEDs) and transistors are being developed (see Non-Patent Document 1).
  • LEDs Light emitting diodes
  • transistors are being developed (see Non-Patent Document 1).
  • gallium oxide (Ga 2 O 3 ) has five crystal structures of ⁇ , ⁇ , ⁇ , ⁇ , and ⁇ , and the most stable structure is generally ⁇ -Ga 2 O 3 .
  • ⁇ -Ga 2 O 3 has a ⁇ -gaul structure, it is not always suitable for use in semiconductor devices, unlike crystal systems generally used for electronic materials and the like.
  • the growth of the ⁇ -Ga 2 O 3 thin film requires a high substrate temperature and a high degree of vacuum, there is also a problem that the manufacturing cost increases.
  • Non-Patent Document 2 in ⁇ -Ga 2 O 3 , even a high concentration (for example, 1 ⁇ 10 19 / cm 3 or more) dopant (Si) is 800 after ion implantation. It could not be used as a donor unless it was annealed at a high temperature of ° C to 1100 ° C.
  • a high concentration for example, 1 ⁇ 10 19 / cm 3 or more
  • dopant (Si) is 800 after ion implantation. It could not be used as a donor unless it was annealed at a high temperature of ° C to 1100 ° C.
  • ⁇ -Ga 2 O 3 has the same crystal structure as the sapphire substrate that has already been widely used, so that it is suitable for use in optical and electronic devices, and has a wider band than ⁇ -Ga 2 O 3. Since it has a gap, it is particularly useful for power devices, and therefore, there is a long-awaited situation for semiconductor devices using ⁇ -Ga 2 O 3 as a semiconductor.
  • ⁇ -Ga 2 O 3 is used as a semiconductor, and as an electrode capable of obtaining ohmic characteristics suitable for this, two layers composed of a Ti layer and an Au layer, a Ti layer, an Al layer and an Au layer are used. A semiconductor device using three layers, or four layers including a Ti layer, an Al layer, a Ni layer, and an Au layer is described. Further, in Patent Document 3, ⁇ -Ga 2 O 3 is used as a semiconductor, and a semiconductor using any one of Au, Pt, or a laminate of Ni and Au as an electrode capable of obtaining Schottky characteristics suitable for the semiconductor. The elements are described.
  • Patent Documents 1 to 3 when the electrodes described in Patent Documents 1 to 3 are applied to a semiconductor element using ⁇ -Ga 2 O 3 as a semiconductor, they do not function as Schottky electrodes or ohmic electrodes, or the electrodes do not bond to the film. There are also problems such as impaired semiconductor characteristics. Further, the electrode configurations described in Patent Documents 1 to 3 have not been able to obtain a semiconductor element that is practically satisfactory, such as a leak current being generated from the electrode end portion.
  • An object of the present invention is to provide a semiconductor element and a semiconductor device including an oxide semiconductor film, which are excellent in heat dissipation and semiconductor characteristics.
  • the present inventors have produced a semiconductor element by laminating a conductive substrate one size larger than an oxide semiconductor film and cutting from the conductive substrate side.
  • a semiconductor device containing an oxide semiconductor film with excellent heat dissipation, and such a semiconductor device has been used as described above.
  • the problem could be solved at once.
  • the present inventors have further studied and completed the present invention.
  • the semiconductor device according to the above [1] or [2], wherein the oxide is ⁇ -Ga 2 O 3 or a mixed crystal thereof.
  • the linear thermal expansion coefficient of the conductive substrate is the same as or smaller than the linear thermal expansion coefficient of the oxide semiconductor film.
  • the oxide semiconductor film includes at least a first side, a second side, a first crystal axis, and a second crystal axis. The coefficient of linear thermal expansion in the first crystal axis direction is smaller than the coefficient of linear thermal expansion in the second crystal axis direction.
  • the first side direction is parallel to or substantially parallel to the first crystal axis direction
  • the second side direction is parallel to or substantially parallel to the second crystal axis direction
  • the conductive substrate includes at least a side corresponding to the first side and a side corresponding to the second side, and the side corresponding to the first side is a side corresponding to the second side.
  • SBD Schottky barrier diode
  • MOSFET metal oxide film semiconductor field effect transistor
  • IGBT insulated gate bipolar transistor
  • the semiconductor device according to the above [16] which is a power module, an inverter, or a converter.
  • a semiconductor system including a semiconductor element or a semiconductor device, wherein the semiconductor element is the semiconductor element according to the above [1] or [2], and the semiconductor device is the above-mentioned [16] to [18].
  • the semiconductor element of the present invention is excellent in semiconductor characteristics and heat dissipation.
  • the following porous layer is shown. It is a figure which shows typically a preferable example of a power-source system. It is a figure which shows typically a preferable example of a system apparatus. It is a figure which shows typically a preferable example of the power supply circuit diagram of a power supply device. It is a figure which shows typically a preferable example of a semiconductor device. It is a figure which shows typically a preferable example of a power card. It is sectional drawing which shows typically one preferable aspect of the semiconductor element of this invention. It is sectional drawing which shows typically one preferable aspect of the semiconductor element of this invention. It is a figure which shows the evaluation result of the simulation of the heat distribution in an Example. It is a figure which shows the evaluation result of the simulation of the heat distribution in an Example. In the figure, the arrows indicate the direction of heat transfer. It is sectional drawing which shows typically one preferable aspect of the semiconductor element of this invention.
  • the semiconductor device of the present invention is a semiconductor device including a laminated structure in which an oxide semiconductor film containing an oxide having a colland structure as a main component is laminated directly or via another layer on a conductive substrate. Therefore, the conductive substrate has a larger area than the oxide semiconductor film.
  • the semiconductor device of the present invention is a semiconductor device including a laminated structure in which an oxide semiconductor film containing an oxide having a colland structure as a main component is laminated on an electrode directly or via another layer.
  • the electrode is characterized by having a larger area than the oxide semiconductor film.
  • the coefficient of linear thermal expansion of the conductive substrate is the same as or smaller than the coefficient of linear thermal expansion of the oxide semiconductor film.
  • the oxide semiconductor film includes at least a first side, a second side, a first crystal axis, and a second crystal axis, and is in the direction of the first crystal axis.
  • the linear thermal expansion coefficient is smaller than the linear thermal expansion coefficient in the second crystal axis direction, the first side direction is parallel or substantially parallel to the first crystal axis direction, and the second side direction is the second.
  • a side that is parallel to or substantially parallel to the crystal axis direction includes at least a side corresponding to the first side and a side corresponding to the second side of the conductive substrate, and corresponds to the first side.
  • the side is longer than the side corresponding to the second side because the heat dissipation property of the semiconductor element can be further improved.
  • the "crystal axis" is a coordinate axis derived from the crystal structure in order to systematically show the crystal plane, symmetry with respect to rotation, and the like.
  • the "first side” may be a straight line or a curved line, but in the present invention, the "first side” is a straight line in order to improve the relationship with the crystal axis. Is preferable.
  • the "second side” may also be a straight line or a curved line, but in the present invention, the straight line is used in order to improve the relationship with the crystal axis. preferable.
  • the "linear thermal expansion coefficient” is measured according to JIS R 3102 (1995).
  • “Side direction” means the direction of the sides that make up a particular shape.
  • the term “substantially parallel” may be a mode that is not completely parallel and may be slightly deviated from it (for example, a mode in which the angles formed by them are greater than 0 ° and less than or equal to 10 °). Good) means that.
  • the conductive substrate is one size larger than the oxide semiconductor film, which makes it easier to miniaturize the semiconductor element while improving the heat dissipation of the semiconductor element. It is preferable because it can be used.
  • “one size larger” means, for example, a case where the area of the conductive substrate is 1.1 to 4 times the area of the oxide semiconductor film.
  • the side surface of the conductive substrate is a cut surface, and the cut surface has a step or a burr.
  • the oxide semiconductor film (hereinafter, also simply referred to as “semiconductor layer” or “semiconductor film”) is not particularly limited as long as it has a corundum structure.
  • the oxide is one or two selected from Group 9 (eg, cobalt, rhodium, iridium, etc.) and Group 13 (eg, aluminum, gallium, indium, etc.) of the periodic table. It preferably contains the above metals, more preferably contains at least one metal selected from aluminum, indium, gallium and iridium, even more preferably contains at least gallium or iridium, and at least contains gallium. Most preferably.
  • the main surface of the oxide semiconductor film is the m-plane because it can further suppress the diffusion of oxygen and the like and further improve the electrical characteristics.
  • the oxide semiconductor film may have an off-angle.
  • the oxide is ⁇ -Ga 2 O 3 or a mixed crystal thereof.
  • the "main component" means that the oxide is contained in an atomic ratio of preferably 50% or more, more preferably 70% or more, still more preferably 90% or more with respect to all the components of the semiconductor layer. It means that it may be 100%.
  • the thickness of the semiconductor layer is not particularly limited and may be 1 ⁇ m or less or 1 ⁇ m or more, but in the present invention, it is preferably 1 ⁇ m or more, and is preferably 10 ⁇ m or more. Is more preferable.
  • the surface area of the semiconductor film is not particularly limited , but may be 1 mm 2 or more, 1 mm 2 or less, preferably 10 mm 2 to 300 cm 2 , and 100 mm 2 to 100 cm 2 . Is more preferable.
  • the semiconductor film is preferably a single crystal film, but may be a polycrystalline film or a crystal film containing polycrystals.
  • the semiconductor film is a multilayer film including at least a first semiconductor layer and a second semiconductor layer, and when a Schottky electrode is provided on the first semiconductor layer, the first semiconductor layer. It is also preferable that the multilayer film has a carrier density smaller than that of the second semiconductor layer.
  • the second semiconductor layer usually contains a dopant, and the carrier density of the semiconductor layer can be appropriately set by adjusting the doping amount.
  • the oxide semiconductor is preferably a metal oxide
  • the metal oxide is not particularly limited, but contains at least one kind or two or more kinds of metals in the 4th to 6th cycles of the periodic table.
  • it contains at least gallium, indium, rhodium or iridium, more preferably gallium.
  • the metal oxide contains gallium and indium or / and aluminum.
  • the semiconductor layer preferably contains a dopant.
  • the dopant is not particularly limited and may be a known one. Examples of the dopant include n-type dopants such as tin, germanium, silicon, titanium, zirconium, vanadium and niobium, and p-type dopants such as magnesium, calcium and zinc.
  • the semiconductor layer preferably contains an n-type dopant, and more preferably an n-type oxide semiconductor layer. Further, in the present invention, the n-type dopant is preferably Sn, Ge or Si.
  • the content of the dopant is preferably 0.00001 atomic% or more, more preferably 0.00001 atomic% to 20 atomic%, and 0.00001 atomic% to 10 atomic% in the composition of the semiconductor layer. Is most preferable. More specifically, the concentration of the dopant may usually be about 1 ⁇ 10 16 / cm 3 to 1 ⁇ 10 22 / cm 3 , and the concentration of the dopant may be, for example, about 1 ⁇ 10 17 / cm. The concentration may be as low as 3 or less. Further, according to one aspect of the present invention, the dopant may be contained in a high concentration of about 1 ⁇ 10 20 / cm 3 or more. Further, the concentration of the fixed charge of the semiconductor layer is also not particularly limited, but in the present invention, the concentration of 1 ⁇ 10 17 / cm 3 or less is sufficient for forming the depletion layer by the semiconductor layer. ,preferable.
  • the semiconductor layer may be formed by using known means.
  • the means for forming the semiconductor layer include a CVD method, a MOCVD method, a MOVPE method, a mist CVD method, a mist epitaxy method, an MBE method, an HVPE method, a pulse growth method, and an ALD method.
  • the semiconductor layer forming means is a mist CVD method or a mist epitaxy method.
  • the mist CVD method or mist epitaxy method described above for example, the raw material solution is atomized (atomization step), the droplets are suspended, and after atomization, the obtained atomized droplets are carried on the substrate with a carrier gas.
  • the semiconductor layer is conveyed (conveyed step), and then the atomized droplets are thermally reacted in the vicinity of the substrate to laminate a semiconductor film containing an oxide as a main component on the substrate (deposition step). To form.
  • the raw material solution is atomized.
  • the means for atomizing the raw material solution is not particularly limited as long as the raw material solution can be atomized, and may be known means, but in the present invention, the means for atomizing using ultrasonic waves is preferable.
  • Atomized droplets obtained using ultrasonic waves have a zero initial velocity and are preferable because they float in the air. For example, instead of spraying them like a spray, they float in a space and are transported as a gas. It is very suitable because it is a possible atomized droplet (including mist) and is not damaged by collision energy.
  • the droplet size is not particularly limited and may be a droplet of about several mm, but is preferably 50 ⁇ m or less, and more preferably 100 nm to 10 ⁇ m.
  • the raw material solution is not particularly limited as long as it contains a raw material that can be atomized and can form a semiconductor film, and may be an inorganic material or an organic material.
  • the raw material is preferably a metal or a metal compound, and one or more selected from aluminum, gallium, indium, iron, chromium, vanadium, titanium, rhodium, nickel, cobalt and iridium. More preferably, it contains a metal.
  • a solution in which the metal is dissolved or dispersed in an organic solvent or water in the form of a complex or a salt can be preferably used.
  • the form of the complex include an acetylacetonate complex, a carbonyl complex, an ammine complex, and a hydride complex.
  • the salt form include organic metal salts (for example, metal acetate, metal oxalate, metal citrate, etc.), metal sulfide salts, nitrified metal salts, phosphor oxide metal salts, and metal halide metal salts (for example, metal chloride). Salts, metal bromide salts, metal iodide salts, etc.) and the like.
  • hydrohalic acid examples include hydrobromic acid, hydrochloric acid, and hydrogen iodide acid. Among them, hydrobromic acid or hydrobromic acid because the generation of abnormal grains can be suppressed more efficiently. Hydrobromic acid is preferred.
  • the oxidizing agent examples include hydrogen peroxide (H 2 O 2 ), sodium peroxide (Na 2 O 2 ), barium peroxide (BaO 2 ), benzoyl peroxide (C 6 H 5 CO) 2 O 2 and the like. Examples include hydrogen peroxide, hypochlorous acid (HClO), perchloric acid, nitric acid, ozone water, and organic peroxides such as peracetic acid and nitrobenzene.
  • the raw material solution may contain a dopant. Doping can be performed satisfactorily by including the dopant in the raw material solution.
  • the dopant is not particularly limited as long as it does not interfere with the object of the present invention.
  • Examples of the dopant include n-type dopants such as tin, germanium, silicon, titanium, zirconium, vanadium and niobium, or Mg, H, Li, Na, K, Rb, Cs, Fr, Be, Ca, Sr and Ba. , Ra, Mn, Fe, Co, Ni, Pd, Cu, Ag, Au, Zn, Cd, Hg, Ti, Pb, N, P-type dopants and the like.
  • the content of the dopant is appropriately set by using a calibration curve showing the relationship between the desired carrier density and the concentration of the dopant in the raw material.
  • the solvent of the raw material solution is not particularly limited, and may be an inorganic solvent such as water, an organic solvent such as alcohol, or a mixed solvent of an inorganic solvent and an organic solvent.
  • the solvent preferably contains water, and more preferably water or a mixed solvent of water and alcohol.
  • the atomized droplets are transported into the film forming chamber by using a carrier gas.
  • the carrier gas is not particularly limited as long as the object of the present invention is not impaired, and for example, an inert gas such as oxygen, ozone, nitrogen or argon, or a reducing gas such as hydrogen gas or forming gas is a suitable example. Can be mentioned.
  • the type of the carrier gas may be one type, but may be two or more types, and a diluted gas having a reduced flow rate (for example, a 10-fold diluted gas) or the like is further used as the second carrier gas. May be good.
  • the carrier gas may be supplied not only at one location but also at two or more locations.
  • the flow rate of the carrier gas is not particularly limited, but is preferably 0.01 to 20 L / min, and more preferably 1 to 10 L / min.
  • the flow rate of the diluting gas is preferably 0.001 to 2 L / min, more preferably 0.1 to 1 L / min.
  • the semiconductor film is formed on the substrate by thermally reacting the atomized droplets in the vicinity of the substrate.
  • the thermal reaction may be such that the atomized droplets react with heat, and the reaction conditions and the like are not particularly limited as long as the object of the present invention is not impaired.
  • the thermal reaction is usually carried out at a temperature equal to or higher than the evaporation temperature of the solvent, but is preferably not too high (for example, 1000 ° C.) or lower, more preferably 650 ° C. or lower, and most preferably 300 ° C. to 650 ° C. preferable.
  • the thermal reaction is carried out in any of a vacuum, a non-oxygen atmosphere (for example, an inert gas atmosphere, etc.), a reducing gas atmosphere, and an oxygen atmosphere, as long as the object of the present invention is not impaired.
  • a vacuum for example, an inert gas atmosphere, etc.
  • a reducing gas atmosphere for example, a reducing gas atmosphere
  • an oxygen atmosphere for example, a nitrogen atmosphere
  • it is preferably carried out in an inert gas atmosphere or an oxygen atmosphere.
  • it may be carried out under any conditions of atmospheric pressure, pressurization and depressurization, but in the present invention, it is preferably carried out under atmospheric pressure.
  • the film thickness of the semiconductor film can be set by adjusting the film formation time.
  • the substrate is not particularly limited as long as it can support the semiconductor film.
  • the material of the substrate is not particularly limited as long as it does not impair the object of the present invention, and may be a known substrate, an organic compound, or an inorganic compound.
  • the shape of the substrate may be any shape and is effective for any shape, for example, plate-like, fibrous, rod-like, columnar, prismatic, such as a flat plate or a disk. Cylindrical, spiral, spherical, ring-shaped and the like can be mentioned, but in the present invention, a substrate is preferable.
  • the thickness of the substrate is not particularly limited in the present invention.
  • the substrate is not particularly limited as long as it has a plate shape and serves as a support for the semiconductor film. It may be an insulator substrate, a semiconductor substrate, a metal substrate or a conductive substrate, but the substrate is preferably an insulator substrate, and the surface is made of metal. A substrate having a film is also preferable.
  • the substrate includes, for example, a base substrate containing a substrate material having a corundum structure as a main component, a base substrate containing a substrate material having a ⁇ -gaul structure as a main component, and a substrate material having a hexagonal structure as a main component. Examples include a base substrate.
  • the “main component” means that the substrate material having the specific crystal structure is preferably 50% or more, more preferably 70% or more, still more preferably 90% or more, in terms of atomic ratio, with respect to all the components of the substrate material. It means that it is contained in% or more, and may be 100%.
  • the substrate material is not particularly limited and may be a known one as long as the object of the present invention is not impaired.
  • Examples of the substrate material having the corundum structure are ⁇ -Al 2 O 3 (sapphire substrate) or ⁇ -Ga 2 O 3 , and a-plane sapphire substrate, m-plane sapphire substrate, and r-plane sapphire substrate are preferable.
  • C-plane sapphire substrate, ⁇ -type gallium oxide substrate (a-plane, m-plane or r-plane) and the like are more preferable examples.
  • the base substrate containing the substrate material having a ⁇ -Galia structure as a main component for example, ⁇ -Ga 2 O 3 substrate or Ga 2 O 3 and Al 2 O 3 are included, and Al 2 O 3 is more than 0 wt%.
  • Examples thereof include a mixed crystal substrate having a content of 60 wt% or less.
  • Examples of the base substrate containing a substrate material having a hexagonal structure as a main component include a SiC substrate, a ZnO substrate, and a GaN substrate.
  • an annealing treatment may be performed after the film forming step.
  • the annealing treatment temperature is not particularly limited as long as the object of the present invention is not impaired, and is usually 300 ° C. to 650 ° C., preferably 350 ° C. to 550 ° C.
  • the annealing treatment time is usually 1 minute to 48 hours, preferably 10 minutes to 24 hours, and more preferably 30 minutes to 12 hours.
  • the annealing treatment may be performed in any atmosphere as long as the object of the present invention is not impaired. It may be in a non-oxygen atmosphere or in an oxygen atmosphere. Examples of the non-oxygen atmosphere include an inert gas atmosphere (for example, a nitrogen atmosphere) and a reduced gas atmosphere, but in the present invention, an inert gas atmosphere is preferable, and a nitrogen atmosphere is used. Is more preferable.
  • the semiconductor film may be provided directly on the substrate, or the semiconductor film may be provided via other layers such as a stress relaxation layer (for example, a buffer layer, an ELO layer, etc.), a peeling sacrificial layer, and the like.
  • a semiconductor film may be provided.
  • the means for forming each layer is not particularly limited and may be a known means, but in the present invention, the mist CVD method is preferable.
  • the semiconductor film is attached to the conductive substrate having a surface area larger than that of the semiconductor film, and then peeled off from the substrate or the like by using a known means, and then the semiconductor element is formed as the semiconductor layer. It may be used as it is, or may be used as it is for a semiconductor element in which the semiconductor film and the conductive substrate having a larger surface area than the semiconductor film are thermally connected.
  • a laminated structure composed of the electrode and the semiconductor film laminated directly on the electrode or via another layer is formed on the conductive substrate having a surface area larger than that of the semiconductor film.
  • a semiconductor element as the laminated structure, or as the laminated structure as it is, the semiconductor film, the electrode and the semiconductor. It may be used for a semiconductor element in which the conductive substrate having a surface area larger than that of the film is thermally connected.
  • the constituent material of the electrode is not particularly limited as long as it has conductivity and can be used as an electrode, as long as the object of the present invention is not impaired.
  • the constituent material of the electrode may be a conductive inorganic material or a conductive organic material.
  • the material of the electrode is preferably metal.
  • Preferred examples of the metal include at least one metal selected from the 4th to 11th groups of the periodic table.
  • Examples of the metal of Group 4 of the periodic table include titanium (Ti), zirconium (Zr), and hafnium (Hf).
  • Examples of the metal of Group 5 of the periodic table include vanadium (V), niobium (Nb), and tantalum (Ta).
  • Examples of the metal of Group 6 of the periodic table include chromium (Cr), molybdenum (Mo) and tungsten (W).
  • Examples of the metal of Group 7 of the periodic table include manganese (Mn), technetium (Tc), and rhenium (Re).
  • Examples of the metal of Group 8 of the periodic table include iron (Fe), ruthenium (Ru), and osmium (Os).
  • Examples of the metal of Group 9 of the periodic table include cobalt (Co), rhodium (Rh), and iridium (Ir).
  • Examples of the metal of Group 10 of the periodic table include nickel (Ni), palladium (Pd), platinum (Pt) and the like.
  • Examples of the metal of Group 11 of the periodic table include copper (Cu), silver (Ag), and gold (Au).
  • the thickness of the electrode is not particularly limited, but is preferably 0.1 nm to 10 ⁇ m, more preferably 5 nm to 500 nm, and most preferably 10 nm to 200 nm. Further, the electrode may be a Schottky electrode or an ohmic electrode, but in the present invention, the ohmic electrode is preferable.
  • the oxide semiconductor film and the electrode are formed on the conductive substrate via a porous layer.
  • the porosity of the porous layer is preferably 10% or less.
  • the "porosity” refers to the ratio of the volume of the space created by the voids to the volume of the porous layer (volume including the voids).
  • the porosity of the porous layer can be determined, for example, based on a cross-sectional photograph taken with a scanning electron microscope (SEM). Specifically, a cross-sectional photograph (SEM image) of the porous layer is taken at a plurality of positions.
  • the captured SEM image is binarized using commercially available image analysis software, and the ratio of the portion (for example, the black portion) corresponding to the hole (void) in the SEM image is obtained.
  • the proportion of the black portion obtained from the SEM images taken at a plurality of positions is averaged and used as the porosity of the porous layer.
  • the "porous layer” includes not only a porous film-like structure which is a continuous film-like structure but also a porous aggregate-like state.
  • the porous layer is not particularly limited, but preferably contains a metal, for example, gold (Au), silver (Ag), platinum (Pt), palladium (Pd), rhodium (Rh), iridium (Ir), ruthenium. It is more preferable to contain a noble metal such as (Ru), and most preferably silver (Ag).
  • the porous layer may be a porous substrate coated with a metal film such as the noble metal, but in the present invention, the porous layer of the metal is preferable, and the porous layer of the noble metal is used. Is more preferable, and a porous layer of silver (Ag) is most preferable. Further, the porous layer may be a single layer or a multi-layered layer.
  • the thickness of the porous layer is not particularly limited as long as the object of the present invention is not impaired, but is preferably about 10 nm to about 1 mm, preferably 10 nm to 200 ⁇ m, and 30 nm to 50 ⁇ m. Is more preferable.
  • the porous layer can be preferably obtained by sintering a metal (preferably a noble metal).
  • the means for setting the porosity of the porous layer to 10% is not particularly limited, and may be a known means. By appropriately setting sintering conditions such as sintering time, pressure, and sintering temperature.
  • the porosity of the porous layer can be easily set to 10%, and more specific examples thereof include means for adjusting the porosity to 10% or less by crimping under heating (heat crimping). For example, during sintering, sintering may be performed under a constant pressure for a longer sintering time than usual.
  • FIG. 7A shows the porosity when a porous layer made of Ag is joined by ordinary annealing as a test example.
  • the porosity of the porous layer usually exceeds 10%, but as shown in FIG. 7B, for an additional hour, for example, 0.2 MPa under heating at 300 ° C. to 500 ° C.
  • the porosity becomes 10% or less, and by using such a porous layer with a porosity of 10% or less for the semiconductor element, warpage and thermal stress concentration without impairing the semiconductor characteristics. Etc. can be alleviated.
  • the conductive substrate is not particularly limited as long as it has conductivity and can support the semiconductor layer.
  • the material of the conductive substrate is also not particularly limited as long as the object of the present invention is not impaired.
  • a metal for example, aluminum, nickel, chromium, nichrome, copper, gold, silver, platinum, rhodium, indium, molybdenum, tungsten
  • a conductive metal oxide for example, ITO (for example) InSnO compounds), FTO (indium oxide doped with fluorine or the like), zinc oxide, etc.
  • conductive carbon for example, semiconductors (SiC, GaN, Si, diamond, etc.) and the like.
  • the conductive substrate is preferably a metal substrate or a semiconductor substrate, and more preferably a metal substrate.
  • the conductive substrate is a semiconductor substrate, it is preferable that the conductive substrate is a SiC substrate.
  • the conductive substrate preferably contains a transition metal, and more preferably contains at least one metal selected from Groups 6 and 11 of the Periodic Table. It is preferable to contain a metal of Group 6 of the periodic table. Examples of the metal of Group 6 of the periodic table include at least one metal selected from chromium (Cr), molybdenum (Mo) and tungsten (W). In the present invention, the metal of Group 6 of the periodic table preferably contains molybdenum.
  • Examples of the metal of Group 11 of the periodic table include at least one metal selected from copper (Cu), silver (Au) and gold (Au). Further, in the present invention, it is preferable that the conductive substrate contains two or more kinds of metals, and examples of such a combination of two or more kinds of metals include copper (Cu) -silver (Ag).
  • the conductive substrate preferably contains molybdenum as a main component, and more preferably molybdenum and copper.
  • the "main component" is, for example, when the conductive substrate contains Mo as a main component, Mo is preferably 50% or more in atomic ratio with respect to all the components of the conductive substrate. It means that it is preferably contained in an amount of 70% or more, more preferably 90% or more, and may be 100%.
  • the conductive substrate contains nickel in at least a part of the surface of the substrate, and it is also preferable that the conductive substrate contains gold in at least a part of the surface of the conductive substrate.
  • the oxide semiconductor film containing an oxide having a corundum structure as a main component, directly or via another layer has an area larger than that of the oxide semiconductor film.
  • the semiconductor element can be obtained by stacking the semiconductor elements on top of each other.
  • the conductive substrate on which the oxide semiconductor film is attached directly on the surface or at regular intervals is placed at the intervals.
  • cutting is performed for each predetermined area (the shape is not particularly limited, but is preferably polygonal, more preferably quadrangular, and most preferably rectangular), but burrs are generated on the cut surface of the conductive substrate.
  • the cut surface of the conductive substrate is made stepped, or the conductive substrate is not formed on the oxide semiconductor film side. It is preferable to fabricate the semiconductor element by cutting from the sex substrate side so that burrs do not adversely affect the semiconductor characteristics.
  • the "other layer” is not particularly limited, and examples thereof include various films such as a crystalline film, an amorphous film, and a metal film, and may be a conductive film or an insulating film. good. Further, it may have a single-layer structure, or may have a multi-layer structure including one type or two or more types of the film.
  • the semiconductor layer and the conductive substrate having a larger surface area than the semiconductor layer are made of one or more layers such as an adhesive layer (for example, an adhesive layer made of a conductive adhesive or a metal). It is preferable that the adhesive layer is sintered to form the porous layer.
  • an adhesive layer for example, an adhesive layer made of a conductive adhesive or a metal. It is preferable that the adhesive layer is sintered to form the porous layer.
  • the oxide semiconductor film containing an oxide having a corundum structure as a main component is laminated on the electrode directly or via another layer, and the obtained laminated structure is further laminated.
  • the semiconductor element is formed by laminating on the conductive substrate having an area larger than that of the oxide semiconductor film, directly or through another layer, and then etching the side surface of the oxide semiconductor film. It is possible to obtain.
  • FIG. 1 shows a main part of a Schottky barrier diode (SBD) as a semiconductor element which is one of the preferred embodiments of the present invention.
  • the semiconductor element includes at least a semiconductor layer 101 and a porous layer 108 having a porosity of 10% or less, which is arranged on the first surface side of the semiconductor layer 101 or the second surface side opposite to the first surface side. is doing.
  • the SBD of FIG. 1 further includes an ohmic electrode 102, a Schottky electrode 103, and a dielectric film 104.
  • the ohmic electrode 102 includes a metal layer 102a, a metal layer 102b, and a metal layer 102c.
  • the semiconductor layer 101 includes a first semiconductor layer 101a and a second semiconductor layer 101b.
  • the Schottky electrode 103 includes a metal layer 103a, a metal layer 103b, and a metal layer 103c.
  • the first semiconductor layer 101a is, for example, an n-type semiconductor layer
  • the second semiconductor layer 101b is, for example, an n + type semiconductor layer 101b.
  • the dielectric film 104 (hereinafter, also referred to as “insulator film”) covers the side surface of the semiconductor layer 101 (the side surface of the first semiconductor layer 101a and the side surface of the second semiconductor layer 101b) to cover the semiconductor. It has an opening located on the upper surface of the layer 101 (first semiconductor layer 101a), and the opening is between a part of the first semiconductor layer 101a and the metal layer 103c of the Schottky electrode 103. It is provided.
  • the dielectric film 104 may be extended so as to cover the side surface of the semiconductor layer 101 and partially cover the upper surface of the semiconductor layer 101 (first semiconductor layer 101a).
  • the dielectric film 104 improves the crystal defects at the ends, forms the depletion layer better, the electric field relaxation is further improved, and the leakage current is suppressed better.
  • the porous layer 108 is arranged on the ohmic electrode 102 (metal layer 102c), and the semiconductor element is further arranged on the porous layer 108 (hereinafter, simply referred to as simply). Also referred to as a "board") 109.
  • the substrate 109 has a larger area than the semiconductor layer 101.
  • the ohmic electrode 102 has a larger area than the semiconductor layer 101.
  • “having a large area” means that in FIG. 1, the area of the substrate 109 or the ohmic electrode 102 when the semiconductor element is viewed from the vertical direction (stacking direction) in a plan view is the semiconductor layer 101. It means that it is larger than the area of.
  • the metal is not particularly limited and may be a known metal.
  • Preferred examples of the metal include at least one metal selected from the 4th to 11th groups of the periodic table.
  • Examples of the metal of Group 4 of the periodic table include titanium (Ti), zirconium (Zr), and hafnium (Hf).
  • Examples of the metal of Group 5 of the periodic table include vanadium (V), niobium (Nb), and tantalum (Ta).
  • Examples of the metal of Group 6 of the periodic table include chromium (Cr), molybdenum (Mo) and tungsten (W).
  • Examples of the metal of Group 7 of the periodic table include manganese (Mn), technetium (Tc), and rhenium (Re).
  • Examples of the metal of Group 8 of the periodic table include iron (Fe), ruthenium (Ru), and osmium (Os).
  • Examples of the metal of Group 9 of the periodic table include cobalt (Co), rhodium (Rh), and iridium (Ir).
  • Examples of the metal of Group 10 of the periodic table include nickel (Ni), palladium (Pd), platinum (Pt) and the like.
  • Examples of the metal of Group 11 of the periodic table include copper (Cu), silver (Ag), and gold (Au).
  • the layer thickness of each of the metal layers is not particularly limited, but is preferably 0.1 nm to 10 ⁇ m, more preferably 5 nm to 500 nm, and most preferably 10 nm to 200 nm.
  • each metal layer in the ohmic electrode 102 and the Schottky electrode 103 is not particularly limited, and may be known means.
  • Specific examples of the forming means include a dry method and a wet method. Examples of the dry method include sputtering, vacuum deposition, and CVD. Examples of the wet method include screen printing and die coating.
  • the heat distribution of the semiconductor element shown in FIG. 1 and the semiconductor element in which the substrate 109 has the same area as the semiconductor layer 101 was simulated when they were used in a semiconductor device.
  • the evaluation result is shown in FIG.
  • the semiconductor device of the present invention has excellent thermal dispersibility and is useful for semiconductor devices that require heat dissipation.
  • the heat distribution of the semiconductor element shown in FIG. 1 and the ohmic electrode 102 of the semiconductor element having the same area as that of the semiconductor layer 101 is simulated when they are used in a semiconductor device. The same evaluation result was obtained.
  • the semiconductor layer 101 includes at least a first side, a second side, a first crystal axis, and a second crystal axis, and is a line in the direction of the first crystal axis.
  • the thermal expansion coefficient is smaller than the linear thermal expansion coefficient in the second crystal axis direction, the first side direction is parallel or substantially parallel to the first crystal axis direction, and the second side direction is the second crystal.
  • the substrate 109 includes at least a side corresponding to the first side and a side corresponding to the second side, and the side corresponding to the first side is It is preferable that the length is longer than the side corresponding to the second side because the heat dissipation of the semiconductor element can be further improved.
  • the ohmic electrode 102 includes at least a side corresponding to the first side and a side corresponding to the second side, and the side corresponding to the first side becomes the second side. It is preferable that the length is longer than the corresponding side because the heat dissipation property of the semiconductor element can be further improved.
  • FIG. 6 shows a main part of a Schottky barrier diode (SBD) as a semiconductor element which is one of the preferred embodiments of the present invention.
  • the SBD of FIG. 6 is different from the SBD of FIG. 1 in that it has a tapered region on the side surface of the Schottky electrode 103.
  • the outer end portion of the metal layer 103b and / or the metal layer 103c as the first metal layer is located outside the outer end portion of the metal layer 103a as the second metal layer. Therefore, the leakage current can be suppressed more satisfactorily.
  • the substrate 109 has a larger area than the semiconductor layer 101.
  • the ohmic electrode 102 has a larger area than the semiconductor layer 101.
  • “having a large area” means that in FIG. 1, the area of the substrate 109 when the semiconductor element is viewed from the vertical direction (stacking direction) in a plan view is larger than the area of the semiconductor layer 101.
  • Examples of the constituent material of the metal layer 103a include the above-mentioned metals exemplified as the constituent material of each metal layer. Further, examples of the constituent materials of the metal layer 103b and the metal layer 103c include the above-mentioned metals exemplified as the constituent materials of each metal layer.
  • the means for forming each layer in FIG. 1 is not particularly limited and may be a known means as long as the object of the present invention is not impaired. For example, a means of forming a film by a vacuum vapor deposition method, a CVD method, a sputtering method, various coating techniques, and then patterning by a photolithography method, or a means of directly patterning by using a printing technique or the like can be mentioned.
  • the first semiconductor layer 101a and the second semiconductor layer 101b are laminated on the crystal growth substrate (sapphire substrate) which is the substrate 110 by the above-mentioned mist CVD method via the stress relaxation layer.
  • the laminated body is shown.
  • a metal layer 102a, a metal layer 102b, and a metal layer 102c are formed on the second semiconductor layer 101b as ohmic electrodes by using the dry method or the wet method to obtain the laminate of FIG. 2B.
  • the substrate 109 is laminated on the laminate shown in FIG.
  • the substrate 110 and the stress relaxation layer 111 of the laminated body (c) are peeled off by using a known peeling means to obtain the laminated body (d).
  • the side surface of the semiconductor layer of the laminated body (d) is tapered by etching to obtain the laminated body (e), and then the tapered side surface and the upper surface other than the opening of the semiconductor layer are formed.
  • the insulating film 104 is laminated to obtain a laminated body (f).
  • metal layers 103a, 103b and 103c are formed as Schottky electrodes by using the dry method or the wet method in the upper opening portion of the semiconductor layer of the laminated body (f) and laminated. Get the body (g).
  • the semiconductor element obtained as described above is excellent in semiconductor characteristics and heat dissipation because the ohmic electrode 102 and the substrate 109 have a larger area than the semiconductor layers 101a and 101b. Further, the semiconductor device obtained as described above can satisfactorily suppress the diffusion of oxygen and the like in the semiconductor layer, exhibit excellent ohmic characteristics, improve crystal defects at the ends, and form a depletion layer. It is formed better, the electric field relaxation is further improved, and the leakage current can be suppressed more satisfactorily.
  • FIG. 17 shows an example of the case where the semiconductor element is a horizontal device.
  • the MOSFET in FIG. 17 is a horizontal MOSFET, which includes an n + type semiconductor layer (n + type source layer) 1b, an n + type semiconductor layer (n + type drain layer) 1c, a high resistance oxide film 2 as a p-type semiconductor layer, and a gate. It includes an insulating film 4a, a gate electrode 5a, a source electrode 5b, a drain electrode 5c, an insulator substrate 9, a porous layer 108, and a substrate 109.
  • the substrate 109 has a larger area than the n + type semiconductor layer (n + type source layer) 1b and the n + type semiconductor layer (n + type drain layer) 1c.
  • the insulator substrate 9 is bonded to the substrate 109 via the porous layer 108, but in the present invention, the insulator substrate 9 is directly bonded to the substrate 109. It may be bonded by using other known means. Further, the means for forming each layer in FIG. 17 is not particularly limited and may be a known means as long as the object of the present invention is not impaired.
  • a means of forming a film by a vacuum vapor deposition method, a CVD method, a sputtering method, various coating techniques, and then patterning by a photolithography method, or a means of directly patterning by using a printing technique or the like can be mentioned.
  • the semiconductor element may be a horizontal device or a vertical device, but in the present invention, it is preferably a vertical device, and is particularly useful for a power device.
  • the semiconductor element include a diode (for example, a PN diode, a Schottky barrier diode, a junction barrier Schottky diode, etc.) or a transistor (for example, a MOSFET, a MESFET, etc.), and among them, a Schottky barrier diode (SBD). ), A metal oxide film semiconductor field effect transistor (MOSFET) or an insulated gate bipolar transistor (IGBT) is preferable, and a Schottky barrier diode (SBD) is more preferable.
  • MOSFET metal oxide film semiconductor field effect transistor
  • IGBT insulated gate bipolar transistor
  • the semiconductor element of the present invention is suitably used as a semiconductor device by joining to a lead frame, a circuit board, a heat radiating board, or the like with a joining member based on a conventional method. It is preferably used as a converter, and further, for example, a semiconductor system using a power supply device or the like.
  • a suitable example of the semiconductor device is shown in FIG. In the semiconductor device of FIG. 11, both sides of the semiconductor element 500 are bonded to the lead frame, the circuit board, or the heat radiating board 502 by solder 501, respectively. With this configuration, a semiconductor device having excellent heat dissipation can be obtained.
  • the periphery of the joining member such as solder is sealed with a resin.
  • the side surface of the conductive substrate is a cut surface, and the step or burr on the cut surface does not adversely affect the semiconductor characteristics of the semiconductor element, and the semiconductor device is manufactured. It is preferable because it can be used.
  • FIG. 13 shows an example of a semiconductor element in the case where the conductive substrate is a cut surface and the cut surface has a step.
  • FIG. 14 shows an example of a semiconductor element in the case where the conductive substrate is a cut surface and the cut surface has a burr 112.
  • the “burr” means a residue, fluff, or the like extending from an end portion or the like of the cutting treatment surface due to the cutting treatment.
  • the step may be one or more steps, and the shape of the step is not particularly limited as long as the object of the present invention is not impaired.
  • the power supply device can be manufactured from the semiconductor device or as the semiconductor device by connecting to a wiring pattern or the like by using a known method.
  • the power supply system 170 is configured by using the plurality of power supply devices 171 and 172 and the control circuit 173.
  • the power supply system can be used in the system apparatus 180 by combining the electronic circuit 181 and the power supply system 182.
  • An example of the power supply circuit diagram of the power supply device is shown in FIG. FIG. 10 shows a power supply circuit of a power supply device including a power circuit and a control circuit.
  • the DC voltage is switched at a high frequency by an inverter 192 (composed of MOSFETs A to D), converted to AC, and then insulated and transformed by a transformer 193.
  • the voltage comparator 197 compares the output voltage with the reference voltage, and the PWM control circuit 196 controls the inverter 192 and the rectifier MOSFET 194 so as to obtain a desired output voltage.
  • the semiconductor device is preferably a power card, includes a cooler and an insulating member, and the coolers are provided on both sides of the semiconductor layer via at least the insulating member. It is more preferable that heat radiating layers are provided on both sides of the semiconductor layer, and that the cooler is provided on the outside of the heat radiating layer at least via the insulating member.
  • FIG. 12 shows a power card which is one of the preferred embodiments of the present invention. The power card of FIG.
  • a double-sided cooling type power card 201 which includes a refrigerant tube 202, a spacer 203, an insulating plate (insulating spacer) 208, a sealing resin portion 209, a semiconductor chip 301a, and a metal heat transfer plate (protruding terminal). Section) 302b, a heat sink and an electrode 303, a metal heat transfer plate (protruding terminal section) 303b, a solder layer 304, a control electrode terminal 305, and a bonding wire 308.
  • the cross section in the thickness direction of the refrigerant tube 202 has a large number of flow paths 222 partitioned by a large number of partition walls 221 extending in the flow path direction at predetermined intervals from each other. According to such a suitable power card, higher heat dissipation can be realized and higher reliability can be satisfied.
  • the semiconductor chip 301a is joined by a solder layer 304 on the inner main surface of the metal heat transfer plate 302b, and the metal heat transfer plate (protruding terminal portion) 302b is formed by the solder layer 304 on the remaining main surface of the semiconductor chip 301a. It is joined so that the anode electrode surface and the cathode electrode surface of the flywheel diode are connected to the collector electrode surface and the emitter electrode surface of the IGBT in so-called antiparallel.
  • Examples of the materials of the metal heat transfer plates (protruding terminal portions) 302b and 303b include Mo and W.
  • the metal heat transfer plates (protruding terminal portions) 302b and 303b have a difference in thickness that absorbs the difference in thickness of the semiconductor chip 301a, whereby the outer surfaces of the metal heat transfer plates 302b and 303b are flat. ..
  • the resin sealing portion 209 is made of, for example, an epoxy resin, and is molded by covering the side surfaces of the metal heat transfer plates 302b and 303b, and the semiconductor chip 301a is molded by the resin sealing portion 209. However, the outer main surface, that is, the contact heat receiving surface of the metal heat transfer plates 302b and 303b is completely exposed.
  • the metal heat transfer plates (protruding terminal portions) 302b and 303b project to the right in FIG. 12 from the resin sealing portion 209, and the control electrode terminal 305, which is a so-called lead frame terminal, is, for example, a semiconductor chip 301a on which an IGBT is formed.
  • the gate (control) electrode surface and the control electrode terminal 305 are connected.
  • the insulating plate 208 which is an insulating spacer, is made of, for example, an aluminum nitride film, but may be another insulating film.
  • the insulating plate 208 completely covers and adheres to the metal heat transfer plates 302b and 303b, but the insulating plate 208 and the metal heat transfer plates 302b and 303b may simply come into contact with each other or have good heat such as silicon grease. Heat transfer materials may be applied or they may be joined in various ways. Further, the insulating layer may be formed by ceramic spraying or the like, the insulating plate 208 may be bonded on the metal heat transfer plate, or may be bonded or formed on the refrigerant tube.
  • the refrigerant tube 202 is manufactured by cutting an aluminum alloy into a plate material formed by a pultrusion molding method or an extrusion molding method to a required length.
  • the cross section in the thickness direction of the refrigerant tube 202 has a large number of flow paths 222 partitioned by a large number of partition walls 221 extending in the flow path direction at predetermined intervals from each other.
  • the spacer 203 may be, for example, a soft metal plate such as a solder alloy, or may be a film (film) formed by coating or the like on the contact surfaces of the metal heat transfer plates 302b and 303b.
  • the surface of the soft spacer 203 is easily deformed to adapt to the minute irregularities and warpage of the insulating plate 208 and the minute irregularities and warpage of the refrigerant tube 202 to reduce the thermal resistance.
  • a known good thermal conductive grease or the like may be applied to the surface of the spacer 203 or the like, or the spacer 203 may be omitted.
  • the semiconductor device of the present invention can be used in all fields such as semiconductors (for example, compound semiconductor electronic devices, etc.), electronic parts / electrical equipment parts, optical / electrophotographic related devices, industrial parts, etc., but is particularly useful for power devices. be.

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