WO2021132133A1 - 半導体チップ洗浄方法及び半導体チップ洗浄装置 - Google Patents

半導体チップ洗浄方法及び半導体チップ洗浄装置 Download PDF

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Publication number
WO2021132133A1
WO2021132133A1 PCT/JP2020/047631 JP2020047631W WO2021132133A1 WO 2021132133 A1 WO2021132133 A1 WO 2021132133A1 JP 2020047631 W JP2020047631 W JP 2020047631W WO 2021132133 A1 WO2021132133 A1 WO 2021132133A1
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WO
WIPO (PCT)
Prior art keywords
semiconductor chip
cleaning
gas
cleaning method
water
Prior art date
Application number
PCT/JP2020/047631
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English (en)
French (fr)
Japanese (ja)
Inventor
菊地　広
憲雅 永田
聡 榎戸
瑾 李
純一 井田
Original Assignee
ヤマハロボティクスホールディングス株式会社
栗田工業株式会社
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Application filed by ヤマハロボティクスホールディングス株式会社, 栗田工業株式会社 filed Critical ヤマハロボティクスホールディングス株式会社
Priority to JP2021567429A priority Critical patent/JP7444410B2/ja
Publication of WO2021132133A1 publication Critical patent/WO2021132133A1/ja

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/52—Mounting semiconductor bodies in containers

Definitions

  • the present invention relates to a semiconductor chip cleaning method for cleaning a semiconductor chip and a semiconductor chip cleaning apparatus.
  • Semiconductor chips are manufactured by cutting wafers with a size of 8 inches or 12 inches to a predetermined size.
  • a dicing film is attached to the back surface so that the cut semiconductor chips do not fall apart, and the wafer is cut from the front surface side with a dicing saw or a laser beam.
  • the dicing film attached to the back surface is slightly cut, but is not cut and holds each semiconductor chip. Then, each of the cut semiconductor chips is picked up from the dicing film one by one and sent to the next process such as flip chip bonding.
  • Patent Document 2 proposes cleaning with an alkaline cleaning solution, an acid-based cleaning solution, or ozone water.
  • an object of the present invention is to remove fine foreign substances adhering to the surface of the semiconductor chip.
  • the semiconductor chip cleaning method of the present invention is a semiconductor chip cleaning method for cleaning the surface of a semiconductor chip attached to the upper surface of a support material, and uses gas-dissolved water in which a specific gas is dissolved in water to clean the semiconductor chip. It is characterized by including a gas-dissolved water cleaning step of cleaning the surface and a wiping cleaning step of wiping the surface of the semiconductor chip.
  • the semiconductor chip cleaning method of the present invention is a semiconductor chip cleaning method for cleaning the surface of a semiconductor chip attached to the upper surface of a support material, and uses gas-dissolved water in which a specific gas is dissolved in water to clean the semiconductor chip. Includes a gas-dissolved water cleaning step for cleaning the surface and a wiping cleaning step for wiping the surface of the semiconductor chip, and performing a wiping cleaning step after the gas-dissolved water cleaning step to remove foreign substances on the surface of the semiconductor chip. It is characterized by.
  • the gas-dissolved water cleaning process removes fine inorganic foreign substances such as wafer cutting chips, and the wiping cleaning process removes fine organic foreign substances, effectively cleaning the surface of the semiconductor chip. be able to.
  • the wiping cleaning step may be executed after the gas-dissolved water cleaning step, and the gas-dissolved water cleaning step may be executed again after the wiping cleaning step.
  • the semiconductor chip cleaning method of the present invention further includes an ozone water cleaning step of cleaning the surface of the semiconductor chip with ozone water in which ozone is dissolved in water, and a wiping cleaning step is executed after the gas dissolved water cleaning step. After the wiping cleaning step, the gas-dissolved water cleaning step may be executed again, and then the ozone water cleaning step may be executed.
  • a drying step of drying the surface of the semiconductor chip may be executed after the final cleaning step.
  • the ultrasonically-vibrated gas-dissolved water may be brought into contact with the surface of the semiconductor chip to remove foreign substances on the surface of the semiconductor chip.
  • the specific gas is a gas containing at least one of hydrogen, oxygen, and nitrogen
  • the gas-dissolved water has the total saturation of the specific gas under atmospheric pressure.
  • Water in which a specific gas is dissolved so as to be 60% to 100% may be used.
  • the gas-dissolved water may be water in which a specific gas is dissolved and an alkali is added.
  • the surface of the semiconductor chip may be wiped while continuously flowing a cleaning liquid on the surface of the semiconductor chip.
  • the cleaning liquid may be carbonated water in which carbon dioxide gas is dissolved in water, and the cleaning liquid may be hydrogen water in which alkali is added to hydrogen water in which hydrogen gas is dissolved in water. But it may be.
  • the specific resistance of the cleaning liquid may be 0.05 to 1 M ⁇ ⁇ cm.
  • the support material to which the semiconductor chip is attached may be a film, and the upper surface to which the semiconductor chip is attached may be covered with an adhesive layer.
  • the film to which the semiconductor chip is attached may be a dicing film.
  • the support material may be a silicon wafer, a glass plate, or a substrate.
  • the surface of the semiconductor chip in the wiping cleaning step, may be wiped with a porous sponge, or the surface of the semiconductor chip may be wiped with a cloth containing microfiber.
  • the semiconductor cleaning device is a semiconductor chip cleaning device that cleans the surface of a semiconductor chip attached to the upper surface of a support material, with the support material having the semiconductor chip attached to the upper surface mounted.
  • a turntable that rotates the support material, a gas-dissolved water nozzle that injects gas-dissolved water in which a specific gas is dissolved in water onto the surface of the semiconductor chip, and a wiping member attached to the tip are moved along the surface of the semiconductor chip.
  • the wiping arm includes a wiping arm for wiping the surface of the semiconductor chip, and the wiping arm is provided with a cleaning liquid nozzle for flowing a cleaning liquid on the surface of the semiconductor chip.
  • gas-dissolved water is sprayed onto the surface of the semiconductor chip from the gas-dissolved water nozzle to remove fine inorganic foreign substances such as wafer cutting chips, and the wiping member attached to the tip of the wiping arm allows the semiconductor chip to be removed. Since the organic fine foreign matter adhering to the surface is removed, the surface of the semiconductor chip can be effectively cleaned.
  • the wiping member may be composed of a porous sponge, or may be composed of a woven fabric or a knitted fabric using microfiber.
  • the wiping arm includes a pressing mechanism for pressing the wiping member against the surface of the semiconductor chip, and the pressing mechanism includes a pressing pressure adjusting mechanism for adjusting the pressing pressure and a pressing amount for adjusting the pressing amount. It may have either one or both of the adjusting mechanism.
  • the wiping arm is provided with a rotation drive mechanism that rotates one or both of the wiping members in rotation or revolution, and continuously flows a cleaning liquid while rotating the wiping member to wipe and clean the surface of the semiconductor chip. , Foreign matter adhering to the wiping member may be washed off.
  • the semiconductor chip may be arranged integrally with the bonding apparatus for bonding the semiconductor chip on another semiconductor chip or substrate so that the cleaned semiconductor chip can be supplied to the bonding apparatus. Further, it is integrally arranged with a dicing apparatus that cuts a semiconductor wafer attached to a dicing sheet into a semiconductor chip, and removes inorganic and organic foreign substances adhering to the surface of the semiconductor chip when the wafer is cut. It may be removable from the surface of the chip.
  • the present invention can remove fine foreign substances adhering to the surface of a semiconductor chip.
  • FIG. 1 It is a side view which shows the structure of the semiconductor chip cleaning apparatus of embodiment. It is a top view which shows the wafer and a semiconductor chip after dicing. It is a flowchart which shows the cleaning process of the semiconductor chip in the semiconductor chip cleaning apparatus shown in FIG. It is sectional drawing of the wafer before dicing. It is sectional drawing which shows the wafer and a semiconductor chip after dicing. It is sectional drawing which shows the semiconductor chip in the state which the gas dissolution water cleaning process is completed. It is sectional drawing of the semiconductor chip in the state which the wiping cleaning process is completed. It is sectional drawing which shows the state which picks up the semiconductor chip after cleaning by the cleaning method of the prior art.
  • the semiconductor chip cleaning device 100 includes a rotary table 50, a gas dissolution water nozzle 61, a wiping arm 70, and a water receiver 55.
  • An ultrasonic oscillator 62 is attached to the gas-dissolved water nozzle 61.
  • the rotary table 50 is composed of a rotary plate 51, a rotary shaft 52, and a rotary drive unit 53.
  • the rotary shaft 52 penetrates the water receiver 55 arranged on the lower side of the rotary plate 51, the rotary plate 51 is attached to the upper end, and the rotary drive unit 53 is attached to the lower end.
  • the rotating plate 51 is a circular flat plate, and the wafer 10 after dicing is placed on the upper surface thereof.
  • the wafer 10 is made of disc-shaped silicon and is attached to the upper surface of a dicing film 30 which is a support material.
  • the upper side of the outer peripheral edge of the dicing film 30 is attached to the ring 20.
  • the wafer 10 is cut into a grid pattern 14 from above with a dicing saw, and is divided into a plurality of semiconductor chips 11.
  • a plurality of semiconductor chips 11 after dicing the wafer 10 are placed on the upper surface of the rotating plate 51 via the dicing film 30.
  • the rotary table 50 rotates the rotary plate 51 by the rotary drive unit 53.
  • the rotary table 50 rotates the semiconductor chip 11 mounted on the upper surface of the rotary plate 51.
  • the gas dissolution water nozzle 61 is arranged on the upper side of the rotary table 50, and injects gas solution water onto the surface of the semiconductor chip 11 placed on the upper surface of the rotary table 50.
  • the root side of the gas-dissolved water nozzle 61 is connected to a gas-dissolved water production apparatus (not shown).
  • an ultrasonic oscillator 62 that ultrasonically vibrates the gas-dissolved water is attached to the outer peripheral surface near the lower end of the gas-dissolved water nozzle 61.
  • the gas dissolution water nozzle 61 can be moved in the XY direction along the surface of the semiconductor chip 11 by an XY drive device (not shown).
  • the wiping arm 70 includes an arm body 71, a wiping member holding portion 73, a cleaning liquid nozzle 72, a rotation drive unit 75, a pressing mechanism 76, and an XY drive unit 77.
  • the arm body 71 can be moved in the XY direction along the surface of the semiconductor chip 11 by the XY drive unit 77.
  • a wiping member holding portion 73 to which the wiping member 74 is attached is attached to the lower end of the tip of the arm body 71.
  • a rotation drive unit 75 including a rotation drive mechanism for rotationally driving the wiping member 74 and a wiping member holding unit 73 are driven in the vertical direction to form the wiping member 74 of the semiconductor chip 11.
  • a pressing mechanism 76 that presses against the surface is attached.
  • a cleaning liquid nozzle 72 whose root side is connected to a cleaning liquid tank (not shown) is attached to the tip of the arm main body 71 to allow the cleaning liquid to flow from the lower end to the surface of the semiconductor chip 11.
  • the wiping member 74 wipes and removes fine foreign substances of organic substances adhering to the surface of the semiconductor chip 11, and may be made of, for example, a porous sponge, or a cloth containing microfibers or microfibers may be used. It may be composed of woven or knitted fabric.
  • the pressing mechanism 76 has one or both of a pressing pressure adjusting mechanism for adjusting the pressing pressure of the wiping member 74 against the surface of the semiconductor chip 11 and a pressing amount adjusting mechanism for adjusting the pressing amount. ..
  • Gas-dissolved water is water in which a specific gas is dissolved in water.
  • the specific gas is a gas containing at least one of hydrogen, oxygen, and nitrogen, and the gas-dissolved water has a total saturation of the specific gas under atmospheric pressure of 60% to 100%. It is water in which a specific gas is dissolved.
  • the gas-dissolved water may be hydrogen water in which hydrogen is dissolved in water.
  • the gas-dissolved water may be one to which an alkaline component is added, and may be, for example, ammonia-added hydrogen water in which ammonia is added to hydrogen water.
  • the cleaning liquid may be carbonated water in which carbon dioxide gas is dissolved in water, or ammonia-added hydrogen water in which alkali is added to hydrogen water in which hydrogen gas is dissolved in water.
  • the cleaning liquid may have a specific resistance of 0.05 to 1 M ⁇ ⁇ cm.
  • the wafer 10 manufactured in the wafer manufacturing process is attached to the upper surface of the dicing film 30 as shown in FIG.
  • the dicing film 30 is composed of a base material 31 and an adhesive layer 32 that covers the upper surface of the base material 31, and the wafer 10 is attached to the upper surface of the adhesive layer 32.
  • the dicing step shown in step S102 of FIG. 3 is executed by the dicing apparatus.
  • the dicing device is a device that cuts a semiconductor wafer 10 attached to a dicing film 30 into a semiconductor chip 11.
  • the dicing apparatus makes a cut 14 in the wafer 10 and cuts the wafer 10 into a plurality of semiconductor chips 11.
  • the adhesive layer 32 of the dicing film 30 is also cut together with the wafer 10.
  • an inorganic foreign matter 15 such as silicon chips and an organic foreign matter 16 such as chips of the adhesive layer 32 are generated. Large of these foreign substances 15 and 16 are removed in the post-dicing cleaning step shown in step S103 of FIG.
  • the fine foreign substances 15 and 16 on the order of several microns to submicrons are not removed, and as shown in FIG. 5, the inorganic fine foreign matter 15 is the semiconductor chip 11 facing the surface of the semiconductor chip 11 and the notch 14. It is in a state of being attached to the side surface of. Further, the organic fine foreign matter 16 is in a state of being attached to the upper surface of the semiconductor chip 11.
  • the gas-dissolved water cleaning step is a step of injecting gas-dissolved water from the gas-dissolved water nozzle 61 onto the surface of the semiconductor chip 11 to clean the surface of the semiconductor chip 11.
  • the gas-dissolved water is ultrasonically vibrated by the ultrasonic oscillator 62 when passing through the gas-dissolved water nozzle 61, and contains fine bubbles.
  • the fine bubbles are foamed on the surface of the semiconductor chip 11 or in the notch 14, and the impact removes the fine inorganic foreign matter 15 on the surface of the semiconductor chip 11.
  • the hydrogen water When hydrogen water is used as the gas dissolution water, the hydrogen water does not corrode the organic substance, so that the inorganic foreign matter 15 can be removed without damaging the base material 31 of the dicing film 30 which is an organic substance. Further, since the oxidation of the surface is suppressed by the hydrogen water, the surface of the semiconductor chip 11 can be finished into a non-oxidized surface. Further, when the alkaline hydrogen water is used, it is possible to prevent the removed foreign matter 15 from reattaching to the surface of the semiconductor chip 11, so that the cleanliness of the surface of the semiconductor chip 11 after cleaning can be further improved.
  • the wiping member holding portion 73 attached to the tip of the wiping arm 70 is rotated by the rotation driving unit 75 while continuously flowing the cleaning liquid from the cleaning liquid nozzle 72 to the surface of the semiconductor chip 11, and the wiping member holding portion 73 is wiped by the pressing mechanism 76.
  • the wiping member holding portion 73 may rotate on its axis.
  • the rotation of the rotary table 50 causes the wiping member holding portion 73 to revolve around the rotary shaft 52.
  • the arm body 71 may be moved in the XY direction by the XY drive unit 77.
  • the rotation drive unit 75 may revolve the wiping member holding unit 73 around the rotation shaft 52.
  • the pressing pressure of the wiping member 74 may be adjusted to the surface of the semiconductor chip 11 by the pressing pressure adjusting mechanism in the pressing mechanism 76, or the pressing amount in the pressing mechanism 76 may be adjusted. The amount of pressing of the wiping member 74 against the semiconductor chip 11 may be adjusted by the adjusting mechanism.
  • the organic foreign matter 16 can be effectively removed from the surface of the semiconductor chip 11 by the wiping and cleaning step.
  • the cleaning liquid pure water, hydrogen water, alkaline-added hydrogen water, carbonated water or the like can be used. When hydrogen water, alkaline-added hydrogen water, or carbonated water is used, the generation of static electricity can be suppressed.
  • the cleaning and cleaning step is completed, the organic fine foreign matter 16 is removed from the surface of the semiconductor chip 11, and the surface of the semiconductor chip 11 becomes a clean surface as shown in FIG. Then, as shown in step S301 of FIG. 3, the semiconductor chip 11 having a clean surface is bonded onto another semiconductor chip 11 or a substrate in a bonding apparatus.
  • the drying step may be executed after the wiping and cleaning step shown in step S202 of FIG. 3, and the semiconductor chip 11 may be dried before bonding.
  • the bonding device is, for example, a flip chip bonding device, but any device such as a die bonding device that joins the semiconductor chip 11 to the object to be bonded can be used.
  • the semiconductor chip cleaning device 100 of the embodiment can remove fine foreign substances 15 and 16 adhering to the surface of the semiconductor chip 11.
  • inorganic foreign substances 15 and organic foreign substances 16 on the order of several microns to submicrons remain on the surface of the semiconductor chip 11 even after cleaning. Therefore, when the semiconductor chip 11 is peeled off from the dicing film 30, the foreign matter 15 adhering to the surface of the semiconductor chip 11 falls on the surface of the adjacent semiconductor chip 11 as shown by the arrow 91. When the semiconductor chip 11 is directly bonded onto the foreign matter 15 that has fallen on the surface of the semiconductor chip 11, good bonding may not be possible due to the foreign matter 15.
  • the semiconductor chip cleaning device 100 of the embodiment since the fine foreign substances 15 and 16 adhering to the surface of the semiconductor chip 11 can be removed, the bonding quality at the time of direct bonding can be improved.
  • the surface of the semiconductor chip 11 attached on the dicing film 30 has been described as being cleaned, but the present invention is not limited to this, and for example, after the dicing cleaning step.
  • Only a good semiconductor chip 11 is picked up from a plurality of diced semiconductor chips 11 and attached onto a glass plate via an adhesive, and the plurality of semiconductor chips 11 are attached to the rotating table 50. It can also be applied when the surface of the semiconductor chip 11 is cleaned by placing it on the semiconductor chip 11.
  • the glass plate constitutes a support material.
  • the semiconductor chip 11 may be attached on a silicon wafer or a substrate instead of a glass plate, and the silicon wafer or the substrate may be placed on a rotary table 50 to clean the semiconductor chip 11.
  • the silicon wafer and the substrate form a support material.
  • a gas-dissolved water cleaning step is performed after the dicing step as shown in step S201 of FIG. 9, then a wiping cleaning step is executed in step S202, and then in step S203 of FIG. , The gas-dissolved water washing step is executed again. Thereby, the inorganic fine foreign matter 15 can be removed more effectively.
  • the wiping cleaning step is executed in step S202, the gas-dissolved water cleaning step is executed again in S203, and then ozone is further executed in step S204. It carries out a water washing process.
  • the ozone water cleaning step cleans the surface of the semiconductor chip 11 by ejecting ozone water in which ozone is dissolved in water from the gas dissolved water nozzle 61. By adding the ozone water cleaning step, the organic fine foreign matter 16 can be removed more effectively.
  • the cleaning step shown in FIG. 11 does not perform the post-dicing cleaning step shown in step S103 of FIG. 3, but only performs the gas-dissolved water cleaning step and the wiping cleaning step. As a result, the cleaning process can be shortened.
  • a drying step is performed after the final cleaning steps of the gas-dissolved water cleaning step, the ozone water cleaning step, and the wiping cleaning step, respectively, to obtain the semiconductor chip 11.
  • the surface may be dried.
  • the semiconductor chip cleaning device 100 of the embodiment may be arranged integrally with the bonding device, and the cleaned semiconductor chip 11 after cleaning may be supplied to the bonding device. As a result, the semiconductor chip 11 having higher cleanliness can be supplied to the bonding apparatus.
  • the semiconductor chip cleaning device 100 of the embodiment may be arranged integrally with the dicing device.
  • the semiconductor chip cleaning device 100 is integrally incorporated in the dicing device instead of the dicing cleaning device of the dicing device, and the inorganic and organic fine foreign substances 15 adhering to the surface of the semiconductor chip 11 when the wafer 10 is cut. , 16 can be removed from the surface of the semiconductor chip 11.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
PCT/JP2020/047631 2019-12-26 2020-12-21 半導体チップ洗浄方法及び半導体チップ洗浄装置 WO2021132133A1 (ja)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023188128A1 (ja) * 2022-03-30 2023-10-05 ヤマハロボティクスホールディングス株式会社 電子部品洗浄装置
WO2023188121A1 (ja) * 2022-03-30 2023-10-05 ヤマハロボティクスホールディングス株式会社 ウェーハ洗浄装置及びボンディングシステム
WO2023188154A1 (ja) * 2022-03-30 2023-10-05 ヤマハロボティクスホールディングス株式会社 電子部品洗浄方法

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JPH09283487A (ja) * 1996-04-09 1997-10-31 Sony Corp 半導体ウェハのダイシング方法及びダイシング装置
JP2007194367A (ja) * 2006-01-18 2007-08-02 Tokyo Seimitsu Co Ltd 洗浄装置及び該洗浄装置を備えるダイシング装置
JP2012146690A (ja) * 2009-03-31 2012-08-02 Kurita Water Ind Ltd 電子材料洗浄方法及び電子材料洗浄装置
JP2016082195A (ja) * 2014-10-22 2016-05-16 Ｔｏｗａ株式会社 切断装置及び切断方法

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JP2001104721A (ja) * 1999-08-02 2001-04-17 Susumu Matsue 遊戯用メダル等の洗浄水浄化装置

Patent Citations (4)

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Publication number Priority date Publication date Assignee Title
JPH09283487A (ja) * 1996-04-09 1997-10-31 Sony Corp 半導体ウェハのダイシング方法及びダイシング装置
JP2007194367A (ja) * 2006-01-18 2007-08-02 Tokyo Seimitsu Co Ltd 洗浄装置及び該洗浄装置を備えるダイシング装置
JP2012146690A (ja) * 2009-03-31 2012-08-02 Kurita Water Ind Ltd 電子材料洗浄方法及び電子材料洗浄装置
JP2016082195A (ja) * 2014-10-22 2016-05-16 Ｔｏｗａ株式会社 切断装置及び切断方法

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023188128A1 (ja) * 2022-03-30 2023-10-05 ヤマハロボティクスホールディングス株式会社 電子部品洗浄装置
WO2023188121A1 (ja) * 2022-03-30 2023-10-05 ヤマハロボティクスホールディングス株式会社 ウェーハ洗浄装置及びボンディングシステム
WO2023188154A1 (ja) * 2022-03-30 2023-10-05 ヤマハロボティクスホールディングス株式会社 電子部品洗浄方法
JP7414335B1 (ja) 2022-03-30 2024-01-16 ヤマハロボティクスホールディングス株式会社 電子部品洗浄装置
JP7422432B1 (ja) 2022-03-30 2024-01-26 ヤマハロボティクスホールディングス株式会社 ウェーハ洗浄装置及びボンディングシステム

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