201032907 六、發明說明： I：發明所屬之技術領域】 發明領域 本發明係有關於一種可於半導體晶圓等工件表面上塗 布液狀樹脂而形成樹脂膜之樹脂膜形成裝置。 發明背景[Technical Field] The present invention relates to a resin film forming apparatus which can form a resin film by coating a liquid resin on a surface of a workpiece such as a semiconductor wafer. Background of the invention
舉例言之，半導體裝置製造步驟中，以格子狀之分割 預定線將圓板狀之半導體晶圓表面劃分為多數矩形領域， 並於該等矩形領域表面形成IC&LSI等電子電路，且研削背 面後再施以研磨等必要之處理，乃裁切全部之分割預定 線，亦即進行晶圓切割，而製得多數之半導體晶片。如此 而製得之半導體晶片將藉樹脂密封而封裝，再廣泛應用於 手機及PC(個人電腦）等各種電子設備、機器。 “、 半導體晶圓之晶圓切割一般係採用漸進切入高速旋轉 之切削刀之方法’近年則已嘗試採用進行照射雷射光線而 溶融晶圓之燒敍加卫同時進行裁切之雷射晶圓切割（參照 專利文獻1等）。然，進行應用雷射照射之燒#加卫後^ 為碎屬之蒸散成分之躲將畴於晶圓表面，㈣致 降低之問題。因此，本案申請人已提案-種在晶圓表：塗 :樹脂而形成有保護膜之狀態下對前述表面照射= 線’而使销附著純翻_直接附著 確保品質之技術(專散獻2)。 81表面’以 【先行技術文獻】 201032907 【專利文獻】 【專利文獻1】特開平10-305420號公報 【專利文獻1】特開2004-188475號公報 【發明内容3 發明概要 發明欲解決之課題 對晶圓表面塗布樹脂時，一如上述專利文獻2之揭露， 宜採對旋轉中之晶圓中心滴下樹脂，並藉離心力使樹脂流 動至全面上之旋塗法。然而該方法尚有飛散而實質上並未 塗布於晶圓上之樹脂量較多之缺點，故儘可能少量而有效 率地形成厚度確實之樹脂膜之技術即備受期待。 本發明即有鑑於上述情形而設計，目的則在提供一種 可以儘可能少量之樹脂有效率地形成厚度確實之樹脂膜， 結果在成本及生產力方面均較有利之樹脂膜形成裝置。 用以欲解決課題之手段 本發明之樹脂膜形成裝置可於板狀之工件一面上塗布 液狀樹脂而形成樹脂膜，包含有：保持機構，具有可在一 面露出之狀態下保持工件之保持面；旋轉機構，可使前述 保持機構以與保持面垂直之方向為旋轉軸而進行旋轉；樹 脂供給機構’可㈣持於歸面上之工件之―面上供給液 狀樹脂；塗布零件’相對於為保持機構所㈣並可藉旋轉 機構而旋轉之工件之-面而對向配置成與至少前述一面之 旋轉中心至最外緣對應；及，塗布零件定位機構，可將前 述塗布零歧位於與已簡於㈣面上之讀之―面接近 201032907 之預定之塗布位置上。 " 依據本發明，因藉塗布零件全面塗布供至工件-面上 之樹脂，故可將樹脂之使用量抑制至最低限度，同時形成 厚度確實之樹脂膜。 本發明並包含藉前述塗布零件定位機構，即可將前述 塗布零件定位於與工件之-面之間之間隔為〇〇1〜〇5mm之 位置上之形態。 ❹ # ’本發明之所謂讀並無特別之限制，可例舉諸如 石夕晶圓等上述半導體晶圓、用於晶片安裝而設於晶圓背面 之DAF(Die Attach Fihn)等黏著構件、半導體產品之封裝、 陶兗、玻璃、藍寶石、賴之基板、各種電子零件、可控 制驅減晶顯示裝置之LCD_||等各種軸器，甚至要 求微米級之精度之各種加工材料等。 發明效果 依據本發明’可獲致以儘可能少量之樹脂有效率地形 〇 麟度確實之樹脂膜’結果在成本及生產力方面均較有利 之效果。 圖式簡單說明 第1圖係顯示本發明一實施例之樹脂犋形成裝置之立 體圖。 第2圖係依⑷〜⑷之順序顯示藉上述裝置形成樹脂膜 之過程之立體圖。 第3圖係顯示樹脂喷嘴兼用作為對晶圓表面塗布樹脂 t塗布零件之形態之截面圖。 5 201032907 第4(a) (b)圖係顯示塗布零件之其它形態例之立體圖。 第5圖係顯不第4(b)圖所示之塗布零件具備喷嘴供給功 能之形態之截面圖。 【方包】 用以實施發明之形態 以下，參照圖示說明本發明之一實施例。 (1)樹脂膜形成裝置之構造 第1圖係顯示可於圓板狀之半導體晶圓（以下簡稱為晶For example, in the semiconductor device manufacturing step, the disk-shaped semiconductor wafer surface is divided into a plurality of rectangular regions by a lattice-divided predetermined line, and electronic circuits such as IC & LSI are formed on the surface of the rectangular regions, and the back surface is ground. After the necessary processing such as polishing, the entire predetermined dividing line is cut, that is, wafer cutting is performed to obtain a plurality of semiconductor wafers. The semiconductor wafer thus produced is sealed by resin sealing, and is widely used in various electronic devices and machines such as mobile phones and PCs (personal computers). ", wafer cutting of semiconductor wafers is generally a method of progressively cutting into high-speed rotating cutters." In recent years, laser wafers that have been irradiated with laser light and fired at the same time have been tried. Cutting (refer to Patent Document 1, etc.). However, after applying the laser irradiation, the evapotranspiration of the genus of the genus will be on the surface of the wafer, and (4) the problem of reduction. Therefore, the applicant of this case has Proposal - a technique in which the wafer surface is coated with a resin and a protective film is formed, and the surface is irradiated with a line ', and the pin is attached to a purely turned-to-directly adhered to ensure quality (Special Dispersion 2). [Patent Document 1] [Patent Document 1] JP-A-2004-188475 (Patent Document 1) JP-A-2004-188475 (Patent Document 3) SUMMARY OF THE INVENTION In the case of a resin, as disclosed in the above-mentioned Patent Document 2, it is preferable to apply a spin coating method to the center of the wafer in rotation and to cause the resin to flow to the entire spin coating method by centrifugal force. However, the method is still scattered. Since the amount of resin which is not applied to the wafer is large, the technique of forming a resin film having a small thickness as efficiently as possible is expected. The present invention is designed in view of the above circumstances, and the object is A resin film forming apparatus which is advantageous in terms of cost and productivity as a result of providing a resin film having a thickness as small as possible, and a resin film forming apparatus of the present invention can be used. The plate-shaped workpiece is coated with a liquid resin to form a resin film, and includes a holding mechanism having a holding surface capable of holding the workpiece in a state in which one surface is exposed; and a rotating mechanism that allows the holding mechanism to be perpendicular to the holding surface Rotating for the rotating shaft; the resin supply mechanism '4' can supply the liquid resin on the surface of the workpiece on the return surface; the coated part is relative to the workpiece that is rotated by the rotating mechanism for the holding mechanism (4) - The surface is oppositely disposed to correspond to at least the rotation center of the one side to the outermost edge; and the coating part positioning mechanism can be The cloth zero is located at a predetermined coating position close to 201032907 which has been read on the surface of (4). " According to the present invention, the resin can be applied to the workpiece-surface by the coating part. The amount of use is suppressed to a minimum, and a resin film having a certain thickness is formed at the same time. The present invention further comprises positioning the coating member at a distance of 〇〇1 to 与 between the surface of the workpiece by the coating member positioning mechanism. The shape of the position of 5 mm. ❹ # 'The so-called reading of the present invention is not particularly limited, and may be exemplified by the above-mentioned semiconductor wafer such as Shi Xi wafer, DAF (Die Attach) provided for wafer mounting on the back side of the wafer. Fihn) and other adhesive components, semiconductor product packaging, ceramics, glass, sapphire, Lai's substrate, various electronic components, LCD_|| such as LCD_|| which can control the crystal display device, even require various levels of precision Processing materials, etc. EFFECTS OF THE INVENTION According to the present invention, it is possible to obtain a resin film which is effective in forming a resin with an effective amount as much as possible, which is advantageous in terms of cost and productivity. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a perspective view showing a resin crucible forming apparatus according to an embodiment of the present invention. Fig. 2 is a perspective view showing the process of forming a resin film by the above apparatus in the order of (4) to (4). Fig. 3 is a cross-sectional view showing a state in which a resin nozzle is used as a coating material for coating a surface of a wafer. 5 201032907 The fourth (a) and (b) drawings are perspective views showing other examples of the coated parts. Fig. 5 is a cross-sectional view showing a state in which the coating member shown in Fig. 4(b) has a nozzle supply function. [Brief Package] Mode for Carrying Out the Invention Hereinafter, an embodiment of the present invention will be described with reference to the drawings. (1) Structure of Resin Film Forming Apparatus Fig. 1 shows a semiconductor wafer which can be in a disk shape (hereinafter referred to as a crystal)
圓）1之表面（一面）上形成樹脂製之保護膜之一實施例之樹 月曰膜形成裝置10者。晶圓i之厚度為諸如i^爪程 度，表面上則以格子狀之分割預定線劃分成多數之矩形晶 片2。各晶片2表面上形成有未圖示之ic&lsi等電子電路。 /晶圓1在藉樹脂膜形成裝置1〇而於表面形成有保護膜 後將對王#之分割預定線照射雷射光而進行應用燒餘加 工之雷射晶圓切割。燒蝕加工除厚度方向上之完全貫穿裁On the surface (one surface) of the circle 1 (1), a tree-shaped film forming apparatus 10 of an embodiment of a protective film made of a resin is formed. The thickness of the wafer i is, for example, the degree of the claw, and the surface is divided into a plurality of rectangular wafers 2 by a predetermined line of division in a lattice shape. An electronic circuit such as ic & lsi (not shown) is formed on the surface of each wafer 2. The wafer 1 is formed by a resin film forming apparatus 1 and a protective film is formed on the surface, and the laser beam is irradiated by applying a laser beam to the predetermined line of the division of the king. Ablation processing in addition to the thickness of the full penetration
切之全厚度切狀外，並包括形成至厚度巾間之預定深度 之溝槽之溝槽加卫。業經溝槽加工之晶圓丨將於後續步驟中 進而就前述溝槽之殘存厚度部分進行全厚度蝴，或藉應 力施加而進行_，时割成多數之晶仏細旨膜形成裝 置10可單獨設置，或附設於可對㈣1進行燒杨工而進行 晶圓切割之雷射加工裝置。 另，晶圓1之剛性較低且單體不易進行處理，故將於其 藉黏膠帶6而呈同心狀-體被支持於環狀之邊框5内側之狀 態下’對樹脂膜形成裝置10加以供給。 6 201032907 • '者雜著面上可貼附邊框5與晶圓卜邊框5係由金廣 等板材所構成之具剛性者，支持該邊框5 ，即可進行安全之 、’’、、知曰日圓1。以下，則將藉黏膠帶6而支持有晶圓1之 邊框5稱為附晶圓之邊框7。 *而樹月曰膜形成裝置1〇包含圓筒狀之機殼2〇與支持機 成20之支持台3〇。支持台购丨包含設成水平狀態之板狀之 基座31 ㈣基座31上之複數腳部π定於該等腳 φ 冑32上端之承載部33。承載部33係形成圓形之皿狀者，機 殼2〇則由上侧對該承載部33嵌入而為其所支持。 承載部33所支持之機殼2〇之轴心呈現大致沿行垂直方 向之狀態’該機殼20之内部則與機殼2〇成同心狀而配設有 浦台（保持機構)4G。旋轉台4〇係於圓板狀之框體4ι上面裏 $心㈣合有多孔質體所構成之圓板狀之吸附部42者。吸 附部42占據旋轉台40上面之大部分，前述吸附部42之上面 (保持面)42a與吸附部42周圍之環狀之框體41上面係同一不 ^ 面而設成水平狀態。 旋轉台40之吸附部42連接有未圖示之真空裝置。前述 真空裝置運轉則可使吸附部42形成負壓，而藉點膠帶6將於 前述吸附部42之上面42a載置成同心狀之附晶圓之邊框7之 晶圓1吸附於吸附部42上並加以保持。 旋轉台40之框體41之外徑與邊框5之外徑大致相等， 且，吸附部42之外徑與晶圓1之外徑大致相等。因此，附晶 圓之邊框7—旦於旋轉台40上載置成同心狀，邊樞5與框體 41之外周緣將大致一致，且晶圓1整體將與吸附部们緊貼而 7 201032907 被保持。旋轉台40以設於中心之朝垂直方向延伸之未圖示 之旋轉軸為中心，而可為配設於承載部33下方之馬達(旋轉 機構)44所旋轉驅動。 旋轉台40之外周緣部按等間隔配設有可保持邊框5而 使其呈裝卸自如狀態之複數夾具43。該等夾具43係構成於 旋轉台40旋轉而產生離心力時，罩部43a將由上方朝框體41 上面壓附邊框5者，並安裝於框體41上。 旋轉台40可藉未圖示之昇降機構而定位於接近上方之The full thickness is cut to shape and includes a groove that forms a groove of a predetermined depth between the thickness of the towel. The grooved wafer 丨 will be subjected to a full thickness butterfly in the subsequent step, or by the stress applied portion, or by a stress application, and the film forming device 10 may be separately The laser processing device is provided, or attached to a wafer that can be used for wafer cutting of (4) 1 . In addition, since the rigidity of the wafer 1 is low and the monomer is difficult to handle, the resin film forming apparatus 10 is disposed in a state in which the concentric tape-like body is supported by the inner side of the annular frame 5 by the adhesive tape 6. supply. 6 201032907 • 'The brackets can be attached to the frame 5 and the wafer frame 5 is rigid with Jinguang and other plates. Supporting the frame 5 can be safe, '', knowing Japanese Yen 1. Hereinafter, the frame 5 supporting the wafer 1 by the adhesive tape 6 is referred to as a wafer-attached frame 7. * The tree decimating film forming device 1A includes a cylindrical casing 2 and a support table 3 of the support mechanism 20. The support table purchase includes a plate-like base 31 provided in a horizontal state. (4) A plurality of leg portions π on the base 31 are fixed to the upper end of the legs φ 胄 32. The carrier portion 33 is formed into a circular dish shape, and the casing 2 is embedded and supported by the carrier portion 33 from the upper side. The axis of the casing 2 支持 supported by the carrying portion 33 is substantially in the vertical direction of the row. The inside of the casing 20 is concentric with the casing 2 and is provided with a sling (holding mechanism) 4G. The turntable 4 is attached to the upper surface of the disk-shaped frame 4m. The core (4) is a disk-shaped adsorption portion 42 composed of a porous body. The suction portion 42 occupies most of the upper surface of the rotary table 40, and the upper surface (holding surface) 42a of the adsorption portion 42 is flush with the upper surface of the annular frame 41 around the adsorption portion 42, and is horizontal. A vacuum device (not shown) is connected to the adsorption portion 42 of the turntable 40. When the vacuum device is operated, the adsorption portion 42 can form a negative pressure, and the wafer 1 on which the dot 7 of the wafer is placed in a concentric shape on the upper surface 42a of the adsorption portion 42 is adsorbed on the adsorption portion 42. And keep it. The outer diameter of the frame 41 of the turntable 40 is substantially equal to the outer diameter of the frame 5, and the outer diameter of the suction portion 42 is substantially equal to the outer diameter of the wafer 1. Therefore, the wafer-attached frame 7 is placed on the turntable 40 in a concentric manner, and the peripheral edge of the side pivot 5 and the frame 41 will substantially coincide with each other, and the wafer 1 as a whole will be closely adhered to the adsorption portion and 7 201032907 maintain. The turntable 40 is rotatably driven by a motor (rotary mechanism) 44 disposed below the load-bearing portion 33, centering on a rotating shaft (not shown) extending in the vertical direction from the center. The outer peripheral portion of the turntable 40 is provided with a plurality of jigs 43 that can hold the frame 5 in a detachable state at equal intervals. When the rotating table 40 is rotated to generate centrifugal force, the cover portion 43a is attached to the frame 41 by attaching the frame 5 to the upper surface of the casing 41 from above. The rotary table 40 can be positioned close to the upper side by a lifting mechanism not shown
BB 汗〇部或位於開口部上方之晶圓遞送位置與低於晶圓遞送 位置之機殼20内之處理位置（第i圖之旋轉台4〇位於該處理 位置)上。 機殼20内設有先端朝下方彎曲之朝水平方向延伸之3 個噴嘴（第1喷嘴51、第2嘴嘴52、第3喷嘴53)。此時，第丄 嘴嘴51乃單獨設置者，並為第1配管基部51A所支持而呈可 水平轉動之狀態。又，第2喷嘴52與第3喷嘴53係並列設置 者而構成1組，該等噴嘴52、53則為配置於與第^己管基部 SlA炎隔有旋轉台4〇之中心之位置上之第2配管基部52八所 支持而呈可水平轉動之狀態。第1噴嘴51與第2及第3噴嘴 52、53之由配管基部延伸之方向互異。 各配管基部51A、52A配設於機殼20之内壁近旁。上述 各嘴嘴51、52、53於接近機殼20内壁之通常位置上，較旋 轉台40位於更外周側，且於旋轉台4〇進行昇降時，將退避 至不致干擾旋轉台40上所保持之附晶圓之邊框7之邊框5之 位置上。其次，各喷嘴51、52、53於旋轉台4〇如第丨圖所示 201032907 般已定位於處理位置上時，將自機殼20之内壁附近之退避 位置作動而於旋轉台40之上方進行水平轉動。各喷嘴51、 52、53則可藉水平轉動而使至少先端移動於對應旋轉台4〇 之中心至外周緣之間之半徑之領域内。 第1噴嘴51連接有與可供給液狀之水溶性樹脂之樹脂 源61連接之配管61A。液狀之水溶性樹脂將自樹脂源61經配 管61A而送至第1喷嘴51，並自第1噴嘴51之先端滴下。所使 用之水溶性樹脂則宜使用聚乙烯醇（PVA)、聚乙二醇 (PEG)、聚氧化乙烯(PEO)等水溶性保護劑。 又，第2喷嘴52則連接有與可供給空氣之空氣源62連接 之配管62A。乾燥空氣將自空氣源62經配管62A而送至第2 喷嘴52，並由第2噴嘴52之先端噴出。 進而，第3喷嘴53連接有與可供給洗蘇水之水源63連接 之配管63A。洗務水將自水源63經配管63A而送至第3噴嘴 53，並由第3喷嘴53之先端流出。所使用之洗蘇水宜使用純 水或為預防靜電而已摻入C02之純水。 另，以下將第1喷嘴51、第2喷嘴52、第3喷嘴53分別稱 為樹脂喷嘴(樹脂供給機構)5卜空氣喷嘴52、洗滌水噴嘴53。 機殼20上方配設有樹脂塗布機構70。該樹脂塗布機構 7〇包含具有可朝垂直下方進行伸縮之活塞桿71a之氣缸（塗 布零件定位機構)71、水平固定於活塞桿71a下端之圓棒狀 之塗布零件72。活塞桿71a與旋轉台40配置成同心狀，而可 對旋轉台40之中心進行伸縮。 塗布零件72之長度與晶圓丨之直徑相等或略長，其中央 201032907 部固定於活塞桿71a之先端。塗布零件72宜使用由不錢鋼或 樹脂等所構成，表面業經平滑加工者。樹脂塗布機構7〇在 旋轉台40已定位於上述處理位置之狀態下，活塞桿7ia將伸 長，塗布零件72則下降至可接近旋轉台4〇上所保持之晶圓i 表面而對該表面塗布均一厚度之樹脂之塗布位置。塗布零 件72之塗布位置係與晶圓i表面之間隔為諸如〇 〇1〜〇 5瓜爪 程度之位置，且在自上方觀察狀態下，乃通過晶圓丨之中心 且對應外周緣間之直徑之位置。另，上述塗布零件72之塗 布位置僅為一具體例，可對應欲形成之保護膜之厚度而將 參 與晶圓1表面之間隔設成大於該具體例或反之而設成較小。 (2)樹脂膜形成裝置之動作 以下，說明上述樹脂膜形成裝置1〇之動作。 (2-1)樹脂之塗布 使真空裝置預先運轉，而於已上昇至晶圓遞送位置而 待機之旋轉台40上，將適當之搬送機構所送至之附晶圓之 邊框7吸附保持成同心狀。其次，使旋轉台4〇下降至處理位 置。然後，使樹脂喷嘴51朝機殼2〇内侧轉動，而將其先端 參 定位於晶圓1之中心附近之正上方。而後，以對應樹脂塗布 之旋轉速度（諸如5〜10〇rpm程度）使旋轉台4〇旋轉，接著於 因旋轉台40旋轉而呈自轉狀態之晶圓1表面之中心附近，如 第2(a)圖所示般，由樹脂噴嘴51先端滴下適量之液狀之水溶 性樹脂P。 樹脂P滴下後’使樹脂噴嘴51退避至旋轉台40之外側。 接著伸長氣缸71之活塞桿71a，而使樹脂塗布機構70之塗布 10 201032907 零件72下降至上述塗布位置。如此則如第2(b)〜(e)圖所示， 樹脂p將輕晶則進行相對旋轉之塗布料η所魏，同 時於晶圓1表面上塗布成均一厚度。 (2-2)藉樹脂之乾燥而形成保護臈The BB sweat portion or the wafer delivery position above the opening and the processing position within the housing 20 below the wafer delivery position (the rotary table 4 of Fig. i is located at the processing position). The casing 20 is provided with three nozzles (the first nozzle 51, the second nozzle 52, and the third nozzle 53) that are bent in the horizontal direction with the tip end bent downward. At this time, the second nozzle 51 is separately provided, and is horizontally rotatable by the first pipe base 51A. Further, the second nozzle 52 and the third nozzle 53 are arranged side by side to form one set, and the nozzles 52 and 53 are disposed at a position spaced apart from the center of the rotary table 4A by the base portion S1A. The second pipe base portion 52 is supported by the eight pipes to be horizontally rotatable. The first nozzle 51 and the second and third nozzles 52 and 53 are different from each other in the direction in which the pipe base extends. Each of the pipe bases 51A and 52A is disposed near the inner wall of the casing 20. The nozzles 51, 52, and 53 are located on the outer peripheral side of the rotating table 40 at a normal position close to the inner wall of the casing 20, and are retracted to prevent interference on the rotating table 40 when the rotating table 4 is lifted and lowered. The position of the bezel 5 of the bezel 7 of the wafer is attached. Next, when the rotary nozzles 4 are positioned at the processing position as shown in FIG. 201032907, the nozzles 51, 52, and 53 are operated on the retracted position near the inner wall of the casing 20 and above the rotary table 40. Rotate horizontally. Each of the nozzles 51, 52, 53 is horizontally rotatable such that at least the leading end moves within the field of the radius between the center of the corresponding rotary table 4A and the outer periphery. A pipe 61A connected to a resin source 61 capable of supplying a liquid water-soluble resin is connected to the first nozzle 51. The liquid water-soluble resin is sent from the resin source 61 to the first nozzle 51 through the pipe 61A, and is dropped from the tip end of the first nozzle 51. As the water-soluble resin to be used, a water-soluble protective agent such as polyvinyl alcohol (PVA), polyethylene glycol (PEG) or polyethylene oxide (PEO) is preferably used. Further, a pipe 62A connected to an air source 62 to which air can be supplied is connected to the second nozzle 52. The dry air is sent from the air source 62 to the second nozzle 52 through the pipe 62A, and is ejected from the tip end of the second nozzle 52. Further, the third nozzle 53 is connected to a pipe 63A that is connected to a water source 63 to which the wash water is supplied. The washing water is sent from the water source 63 to the third nozzle 53, via the pipe 63A, and flows out from the tip end of the third nozzle 53. The soaking water used should be pure water or pure water that has been incorporated into CO 2 to prevent static electricity. In the following, the first nozzle 51, the second nozzle 52, and the third nozzle 53 are referred to as a resin nozzle (resin supply mechanism) 5, an air nozzle 52, and a washing water nozzle 53, respectively. A resin coating mechanism 70 is disposed above the casing 20. The resin application mechanism 7A includes a cylinder (coating part positioning mechanism) 71 having a piston rod 71a that can be vertically expanded downward, and a round bar-shaped coating member 72 horizontally fixed to the lower end of the piston rod 71a. The piston rod 71a and the rotary table 40 are arranged concentrically, and the center of the rotary table 40 can be expanded and contracted. The length of the coated member 72 is equal to or slightly longer than the diameter of the wafer cassette, and the center portion 201032907 is fixed to the tip end of the piston rod 71a. The coated member 72 is preferably made of stainless steel or resin, and the surface is smoothed. In the state in which the rotary table 40 has been positioned at the above-described processing position, the piston rod 7ia is elongated, and the coated member 72 is lowered to the surface of the wafer i held on the rotary table 4 to be coated with the surface. The coating position of the resin of uniform thickness. The coating position of the coating member 72 is spaced from the surface of the wafer i by a position such as 〇〇1 to 〇5, and is viewed from above, passing through the center of the wafer and corresponding to the diameter between the outer circumferences. The location. Further, the coating position of the coating member 72 is only a specific example, and the interval between the surfaces of the wafers 1 and the surface of the wafer 1 may be set larger than the specific example or vice versa depending on the thickness of the protective film to be formed. (2) Operation of the resin film forming apparatus The operation of the resin film forming apparatus 1 described above will be described below. (2-1) Coating of the resin The vacuum device is pre-operated, and the frame 7 of the wafer attached to the appropriate transfer mechanism is adsorbed and held concentrically on the rotary table 40 that has been raised to the wafer delivery position. shape. Next, the rotary table 4〇 is lowered to the processing position. Then, the resin nozzle 51 is rotated toward the inside of the casing 2, and its tip end is positioned directly above the center of the wafer 1. Then, the rotary table 4 is rotated at a rotation speed corresponding to the resin coating (for example, about 5 to 10 rpm), and then near the center of the surface of the wafer 1 in a state of rotation due to the rotation of the rotary table 40, as in the second (a) As shown in the figure, an appropriate amount of the liquid water-soluble resin P is dropped from the tip end of the resin nozzle 51. After the resin P is dropped, the resin nozzle 51 is retracted to the outside of the turntable 40. Next, the piston rod 71a of the cylinder 71 is extended, and the coating of the resin coating mechanism 70 10 201032907 is lowered to the above-mentioned coating position. As described in the second (b) to (e) diagrams, the resin p is light-crystal, and the coating material η which is relatively rotated is applied to the surface of the wafer 1 to have a uniform thickness. (2-2) Forming protection by drying of resin臈
於晶圓1表面塗布樹脂P後，使塗布零件72上昇而結束 樹脂塗布步驟。接著，續行旋轉台4〇之旋轉，並使形成一 體之空氣喷嘴52與洗滌水喷嘴53於晶圓1上進行來回轉 Φ 動，同時自空氣喷嘴52先端朝晶圓1表面上已塗布之樹脂P 喷出乾燥空氣而使前述樹脂p乾燥。樹脂p將因此而固化， 並形成晶圓1表面上形成之預定厚度之保護膜(樹脂膜)ρι。 乾燥完成而結束保護膜形成步驟後，停止旋轉台40之 旋轉，進而使旋轉台40上昇至晶圓遞送位置。然後，自旋 轉台40取出晶圓1，再予以實施上述應用燒蝕加工之雷射晶 圓切割加工之步驟。晶圓1於燒蝕加工時產生之碎屑將附著 於保護膜P1表面而不直接附著於晶圓1表面上，而可確保晶 _ 圓1之品質。 (2-3)保護膜之去除及洗滌 對晶圓1施以雷射晶圓切割加工後，再度將附晶圓之邊 框7送入上述樹脂膜形成裝置1〇，而去除並洗滌保護膜^ 如下。 首先’經雷射晶圓切割晶圓1後之附晶圓之逄框7將為 已於上述晶圓遞送位置待機之旋轉台4〇所吸附保持。接 著，旋轉台40將下降至上述處理位置而進行旋轉。其-欠， 使各喷嘴52、53進行來回轉動，同時由洗滌水噴嘴幻先端 11 201032907 出先務水，並對保護膜P1全面流佈前述洗蘇水。藉此而 使水溶性樹脂p所構成之保護賴溶解，並自晶圓丨表面沖 淨洗除保護膜P1。 元全去除晶圓1表面之保護膜P1後，停止自洗滌水噴嘴 53流出洗滌水，並繼續進行旋轉台4〇之旋轉及各噴嘴52、 53之來_動’同時由空氣噴嘴52先端噴出乾燥空氣。對 露出之晶圓1表面全面喷出乾燥空氣，進而配合藉離心力吹 散水分之作用’而進行晶ΒΠ之乾燥處理。然後，使旋轉台 40上昇至晶圓遞送位置，而將附晶圓之邊框7移送後續處理。 另，上述承載部33上將殘留樹脂P之塗布時自晶圓1之 卜周緣掉落之多餘樹脂及洗務水，但承載部33連接有可將 该等樹脂及洗蘇水排出至預定之處理設備之排液管（已省 略圖示）。 (3) 一實施例之作用效果 依據上述一實施例之樹脂膜形成裝置10,使晶圓1自轉 同時對已供至該晶圓i表面上之樹脂p壓抵樹脂塗布機構％ 塗布零件72，即可對晶圓丨之表面全面塗布樹脂p。因此， 如1知之旋塗法般使樹脂飛散，而可將供給之絕大部 分，脂P使用於保護膜P。故而，可以最小限度之樹脂p之使 用量有效率地形成預定厚度之保護膜P1。 又即便黏度較兩之樹脂，亦可藉塗布零件力口以壓 散而進仃塗布，故與諸如以霧㈣霧樹脂溶液而進行塗布 之=霧法比較，亦可使用黏度較高之樹脂。若可使用黏度 之樹& %具備可增加樹脂之選擇性，並縮短乾燥時 12 201032907 間之優點。 另，上述實施例中，晶圓表面上形成之保護膜之預定 厚度因樹脂乾燥後厚度將減小，故設成諸如塗布時之樹脂 厚度(此即塗布零件72與晶圓！表面之間隔)之l/i〇程度。換 言之，欲將保護膜形成預定厚度，須將塗布零件72與晶圓| 表面之間隔設成預定厚度之10倍程度。另，預定厚度係可 視需要而改變者，通常為諸如數百nm程度，較厚時為數^ e m，而晶圓表面設有稱為凸塊之突起電極時則為數百程 &又，最後調整保遵膜厚度之方法，亦可採用在藉塗布 零件72塗布樹脂後，使旋轉台40以對應保護膜所需膜厚之 適當旋轉速度(諸如100〜3000rpm程度）進行旋轉，而散除多 • 餘量之樹脂者。 (4)其它實施例及附加要件 以下，說明以上述一實施例為基礎之本發明其它實施 例及附加要件。 φ (4·1)藉樹脂喷嘴塗布樹脂 上述樹脂喷嘴51係由先端朝晶圓1表面滴下樹脂p者， 但如第3圖所示，可構成於樹脂喷嘴51之中央部附近形成可 朝晶圓1之表面中心滴下樹脂p之開口 51a，且形成有可供樹 脂P流至該開口 51a之樹脂供給道51b。上述之樹脂喷嘴51可 配置於旋轉台40上所保持之晶圓！上方而自開口 51a滴下樹 脂P，然後使旋轉台40上昇並旋轉，而藉樹脂噴嘴51對晶圓 1表面塗布樹脂P。 另’此時，亦可使旋轉台40上昇而使晶圓1接近樹脂嘴 13 201032907 嘴51 ’再由開口 51a流出樹脂P同時使旋轉台40旋轉而塗布 樹脂。如此’將樹脂噴嘴兼用作為塗布零件之形態，可獲 致構造簡化及零件數量減少之效果。 (4~2)塗布零件之形狀After the resin P is applied onto the surface of the wafer 1, the coated component 72 is raised to complete the resin coating step. Then, the rotation of the rotary table 4 is continued, and the integrated air nozzle 52 and the washing water nozzle 53 are rotated on the wafer 1 while being splayed from the tip of the air nozzle 52 toward the surface of the wafer 1. The resin P ejects dry air to dry the aforementioned resin p. The resin p is thus cured, and a protective film (resin film) ρι of a predetermined thickness formed on the surface of the wafer 1 is formed. After the drying is completed and the protective film forming step is completed, the rotation of the rotary table 40 is stopped, and the rotary table 40 is raised to the wafer delivery position. Then, the spin transfer table 40 takes out the wafer 1, and then performs the above-described laser crystal cutting process using the ablation process. The chips generated during the ablation process of the wafer 1 adhere to the surface of the protective film P1 without directly adhering to the surface of the wafer 1, and the quality of the crystal 1 is ensured. (2-3) Removal and Washing of Protective Film After the wafer 1 is subjected to laser wafer cutting processing, the frame 7 of the attached wafer is again fed into the above-mentioned resin film forming apparatus 1 to remove and wash the protective film. as follows. First, the frame 7 of the wafer after the wafer 1 has been diced by the laser wafer will be adsorbed and held by the rotating table 4 that has been standby at the wafer delivery position. Then, the rotary table 40 is lowered to the above-described processing position to be rotated. The under-rotation causes the nozzles 52 and 53 to rotate back and forth, and at the same time, the washing water nozzle phantom end 11 201032907 releases water first, and the protective film P1 is completely distributed to the aforementioned washing water. Thereby, the protection by the water-soluble resin p is dissolved, and the protective film P1 is washed away from the surface of the wafer. After removing the protective film P1 on the surface of the wafer 1, the flow of the washing water from the washing water nozzle 53 is stopped, and the rotation of the rotary table 4 is continued, and the nozzles 52 and 53 are simultaneously moved from the tip end of the air nozzle 52. Dry air. The dry air is sprayed on the surface of the exposed wafer 1 to further dry the crystal by the action of dispersing the water by centrifugal force. Then, the rotary table 40 is raised to the wafer delivery position, and the wafer-attached frame 7 is transferred to subsequent processing. Further, the carrier portion 33 has excess resin and washing water dropped from the periphery of the wafer 1 during application of the residual resin P, but the carrier portion 33 is connected to discharge the resin and the soda water to a predetermined state. Discharge pipe of the processing equipment (illustration omitted). (3) Effects of the Embodiment According to the resin film forming apparatus 10 of the above-described embodiment, the wafer 1 is rotated while the resin p supplied to the surface of the wafer i is pressed against the resin coating mechanism % of the coating member 72, The surface of the wafer crucible can be completely coated with the resin p. Therefore, the resin is scattered as in the spin coating method as described above, and the supply portion is used in a large portion, and the grease P is used for the protective film P. Therefore, the protective film P1 of a predetermined thickness can be efficiently formed in a small amount by the amount of the resin p. Further, even if the resin having a higher viscosity than the two resins can be applied by pressure application of the coating member, it is possible to use a resin having a higher viscosity than a mist method such as a mist (four) mist resin solution. If the viscosity tree & % is used, it can increase the selectivity of the resin and shorten the advantage of drying between 2010 and 201032907. In addition, in the above embodiment, the predetermined thickness of the protective film formed on the surface of the wafer is reduced by the thickness of the resin after drying, so that the thickness of the resin such as the coating is set (this is the interval between the coated part 72 and the wafer! surface). The degree of l/i〇. In other words, in order to form the protective film to a predetermined thickness, the distance between the coated member 72 and the wafer|surface must be set to about 10 times the predetermined thickness. In addition, the predetermined thickness may be changed as needed, usually in the range of, for example, several hundred nm, and when the thickness is thick, the number of ems is several, and when the surface of the wafer is provided with a bump electrode called a bump, it is hundreds of passes & The method of adjusting the thickness of the film can also be used to rotate the rotating table 40 at an appropriate rotation speed (such as 100 to 3000 rpm) corresponding to the film thickness required for the protective film after coating the resin by the coating member 72, and to disperse more. • The amount of resin in the balance. (4) Other Embodiments and Additional Elements Hereinafter, other embodiments and additional elements of the present invention based on the above-described embodiment will be described. φ (4·1) Resin nozzle coating resin The resin nozzle 51 is formed by dropping the resin p from the tip end toward the surface of the wafer 1. However, as shown in Fig. 3, it may be formed in the vicinity of the central portion of the resin nozzle 51. The opening 51a of the resin p is dropped from the center of the surface of the circle 1, and a resin supply path 51b through which the resin P flows to the opening 51a is formed. The resin nozzle 51 described above can be disposed on the wafer held on the rotary table 40! On the upper side, the resin P is dropped from the opening 51a, and then the rotary table 40 is raised and rotated, and the surface of the wafer 1 is coated with the resin P by the resin nozzle 51. Further, at this time, the turntable 40 can be raised to bring the wafer 1 closer to the resin nozzle 13 201032907. The nozzle 51 ′ flows out of the resin P from the opening 51 a while rotating the rotary table 40 to apply the resin. Thus, the use of a resin nozzle as a coating member can achieve a simplified structure and a reduced number of parts. (4~2) Shape of coated parts
上述實施例中，用於塗布樹脂P之塗布零件72為圓棒 狀，但塗布零件之形狀不限於此，亦可如第4(a)圖所示之板 狀之塗布零件73、第4(b)圖所示之圓板狀之塗布零件74般， 構成可於晶圓1表面塗布樹脂p之任意形狀。 又，亦可構成於上述形狀之塗布零件内形成樹脂供給 道並由樹月曰供給道之開口朝晶圓表面流出樹脂，同時藉 塗布零件塗布樹脂。第5圖係顯示於第4(b)圖所示之圓板狀 之塗布零件74中心形成作為供給道之孔洞74a，並由該孔洞 74a滴下樹脂p之構造者。 (4-3 )塗布零件之洗滌In the above embodiment, the coating member 72 for applying the resin P has a round bar shape, but the shape of the coated member is not limited thereto, and the plate-shaped coated member 73 and the fourth portion (see FIG. 4(a)) may be used. b) As in the case of the disk-shaped coated component 74 shown in the figure, the shape of the resin p can be applied to the surface of the wafer 1. Further, a resin supply path may be formed in the coated component of the above shape, and the resin may be discharged from the opening of the tree raft supply path toward the surface of the wafer, and the resin may be coated by the coating member. Fig. 5 is a view showing a structure in which a hole 74a as a supply path is formed in the center of a disk-shaped coated member 74 shown in Fig. 4(b), and a resin p is dropped from the hole 74a. (4-3) Washing of coated parts
用於塗布樹脂之塗布零件可能附著樹脂，若在附著有 樹脂之狀態下加以使㈣後續之塗布，則保護膜表面可能 不易形成平坦狀。因此，宜附加構成可對塗布 布零件沖錢齡，或㈣布零m 動 等加以清洗，絲後再予以乾燥之塗布零件洗^藉振動 (4-4)控制機構之附加 構U可附加可對應晶圓之厚度、樹脂之種類漆度) 脂塗布時之樹脂旋轉數，而控制塗布零件之下降距離 制機構’以確實控制塗布零件對晶圓表面之間隔。舉 之，對上述之控制機構輸人預定之保護媒厚、晶圓厚> 14 201032907 • 樹脂種類(黏度）’即可基於控制機構已預存之資料換算塗布 零件之下降距離(上述實施例中活塞桿7ia之伸長量），並使 塗布零件下降前述下降距離程度。如此，即可確實於晶圓 表面形成預定厚度之保護膜。 【廣I式簡單說明】 第1圖係顯示本發明一實施例之樹脂膜形成裝置之立 體圖。 © 帛2圖係依⑷〜(c)之順序顯示藉上述裝置形成樹脂膜 之過程之立體圖。 第3圖係顯示樹脂喷嘴兼用作為對晶圓表面塗布樹脂 之塗布零件之形態之截面圖。 第4(a)、（b)圖係顯示塗布零件之其它形態例之立體圖。 第5圖係顯示第4(b)圖所示之塗布零件具備喷嘴供給功 能之形態之截面圖。 【主要元件符號說明】 i，·*晶圓 32…腳部 2...晶片 33…承載部 5···邊框 40…旋轉台 6···黏膠帶 41…框體 7···附晶圓之邊框 42···吸附部 1G···樹脂膜形成裝置 42a···上面 2〇···機殼 43…爽具 3G···支持台 43a…罩部 31’··基座 44…馬達 15 201032907 51…第1喷嘴 63…水源 51A…第1配管基部 63 A…配管 5 la…開口 70…樹脂塗布機構 5 lb…樹脂供給道 71…氣缸 52…第2喷嘴 71a…活塞桿 52A..·第2配管基部 72…塗布零件 53…第3喷嘴 73…塗布零件 61…樹脂源 74…塗布零件 61A…配管 74a···孔洞 62…空氣源 P…樹脂 62A···配管 P1…保護膜 16The coated part for coating the resin may be attached with a resin, and if (4) is applied in the state in which the resin is attached, the surface of the protective film may not easily form a flat shape. Therefore, it is advisable to add an additional structure that can be used to clean the coated cloth parts, or (4) cloth zero m movement, etc., and then dry the coated parts by the vibration (4-4) control mechanism. Corresponding to the thickness of the wafer, the type of resin, the number of resin rotations during the application of the grease, and the mechanism for controlling the falling distance of the coated parts to reliably control the spacing of the coated parts from the surface of the wafer. For example, the protective medium thickness and the wafer thickness of the above-mentioned control mechanism are input, and the resin type (viscosity) can be used to convert the falling distance of the coated component based on the data pre-stored by the control mechanism (in the above embodiment) The amount of elongation of the piston rod 7ia) is such that the coated part is lowered by the aforementioned descending distance. Thus, it is possible to form a protective film of a predetermined thickness on the surface of the wafer. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a perspective view showing a resin film forming apparatus according to an embodiment of the present invention. The 帛2 diagram shows a perspective view of the process of forming a resin film by the above apparatus in the order of (4) to (c). Fig. 3 is a cross-sectional view showing a state in which a resin nozzle is used as a coating member for coating a resin on a wafer surface. 4(a) and 4(b) are perspective views showing other examples of the coated component. Fig. 5 is a cross-sectional view showing a state in which the coating member shown in Fig. 4(b) has a nozzle supply function. [Description of main component symbols] i, ·* wafer 32...foot 2...wafer 33...bearer 5···frame 40...rotary table 6···adhesive tape 41...frame 7···attachment Round frame 42···Adsorption unit 1G···································································· ...motor 15 201032907 51...first nozzle 63...water source 51A...first pipe base 63 A...pipe 5 la...opening 70...resin coating mechanism 5 lb...resin supply path 71...cylinder 52...second nozzle 71a...piston rod 52A . . . the second piping base portion 72 ... the coating member 53 ... the third nozzle 73 ... the coating member 61 ... the resin source 74 ... the coating member 61A ... the piping 74 a · the hole 62 ... the air source P ... the resin 62 A · · · the piping P1... Protective film 16