CN105390405B - Protect membrane covering method and protective film cladding system - Google Patents
Protect membrane covering method and protective film cladding system Download PDFInfo
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- CN105390405B CN105390405B CN201510504881.5A CN201510504881A CN105390405B CN 105390405 B CN105390405 B CN 105390405B CN 201510504881 A CN201510504881 A CN 201510504881A CN 105390405 B CN105390405 B CN 105390405B
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- liquid resin
- chip
- protective film
- rotary table
- liquid
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- 238000000034 method Methods 0.000 title claims abstract description 109
- 230000001681 protective effect Effects 0.000 title claims abstract description 89
- 239000012528 membrane Substances 0.000 title claims abstract description 15
- 238000005253 cladding Methods 0.000 title claims abstract description 13
- 239000007788 liquid Substances 0.000 claims abstract description 163
- 239000011347 resin Substances 0.000 claims abstract description 157
- 229920005989 resin Polymers 0.000 claims abstract description 157
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 78
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 24
- 239000008400 supply water Substances 0.000 claims abstract description 9
- 238000012545 processing Methods 0.000 claims description 35
- 230000003340 mental effect Effects 0.000 claims 1
- 241000478345 Afer Species 0.000 abstract description 4
- 235000012431 wafers Nutrition 0.000 description 88
- 239000004065 semiconductor Substances 0.000 description 80
- 238000004140 cleaning Methods 0.000 description 36
- 239000007921 spray Substances 0.000 description 23
- 230000011218 segmentation Effects 0.000 description 18
- 238000010586 diagram Methods 0.000 description 17
- 238000010521 absorption reaction Methods 0.000 description 14
- 238000003384 imaging method Methods 0.000 description 9
- 239000004372 Polyvinyl alcohol Substances 0.000 description 8
- 229920002451 polyvinyl alcohol Polymers 0.000 description 8
- 235000019422 polyvinyl alcohol Nutrition 0.000 description 8
- 238000012546 transfer Methods 0.000 description 8
- BVPWJMCABCPUQY-UHFFFAOYSA-N 4-amino-5-chloro-2-methoxy-N-[1-(phenylmethyl)-4-piperidinyl]benzamide Chemical compound COC1=CC(N)=C(Cl)C=C1C(=O)NC1CCN(CC=2C=CC=CC=2)CC1 BVPWJMCABCPUQY-UHFFFAOYSA-N 0.000 description 6
- 238000003780 insertion Methods 0.000 description 6
- 230000037431 insertion Effects 0.000 description 6
- 230000002093 peripheral effect Effects 0.000 description 6
- 229940068984 polyvinyl alcohol Drugs 0.000 description 5
- 239000002202 Polyethylene glycol Substances 0.000 description 4
- 238000001035 drying Methods 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 229920001223 polyethylene glycol Polymers 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 239000012530 fluid Substances 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 229920003171 Poly (ethylene oxide) Polymers 0.000 description 2
- 238000005119 centrifugation Methods 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 229910009372 YVO4 Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000008398 formation water Substances 0.000 description 1
- ZZUFCTLCJUWOSV-UHFFFAOYSA-N furosemide Chemical group C1=C(Cl)C(S(=O)(=O)N)=CC(C(O)=O)=C1NCC1=CC=CO1 ZZUFCTLCJUWOSV-UHFFFAOYSA-N 0.000 description 1
- 230000003760 hair shine Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Dicing (AREA)
- Coating Apparatus (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
- Laser Beam Processing (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
The present invention provides protection membrane covering method and protective film cladding system.Include: that chip keeps process, front wafer surface is held in rotary table upward；Liquid resin drips process, and liquid resin is dripped to the front middle section of chip；Water layer formation process forms water layer on entire front to liquid resinous chip supply water is dripped in front middle section；Liquid resin diffusing procedure, rotates rotary table, and with afer rotates, the centrifugal force for acting on water layer makes water layer disperse, and liquid resin spreads and forms thin protective film layer in entire front；Liquid resin supply step, rotary table are rotated with the speed slower than liquid resin diffusing procedure, and the liquid resin for the amount dripped more than process to entire front supply than liquid resin；And protective film formation process, rotary table are rotated with the speed faster than liquid resin supply step, with afer rotates, acting on liquid resinous centrifugal force makes liquid resin expand and form protective film in entire front.
Description
Technical field
The present invention relates to the protection membrane covering methods of the covering protection film on the machined surface of the machined objects such as semiconductor wafer
With protective film cladding system.
Background technique
In semiconductor devices manufacturing process, using clathrate on the surface of the semiconductor wafer of substantially circular plate shape
The segmentation preset lines for being referred to as spacing track of arrangement mark off multiple regions, form IC in the region marked off
The devices such as (integrated circuit: integrated circuit), LSI (large-scale integration: large scale integrated circuit)
Part.Then, by cutting off semiconductor wafer along spacing track, to be split to the region for being formed with device, to produce
Device one by one.
As the method by chips such as such semiconductor wafer or optical device wafers along segmentation preset lines segmentation, propose
Following methods: by forming laser processing groove, and edge along the segmentation preset lines irradiated with pulse laser light for being formed in chip
The laser processing groove using machinery fracture device cut off.(for example, referring to patent document 1)
But it when the segmentation preset lines along chip irradiate laser beam, can lead to the problem of as described below new: thermal energy
Illuminated region is concentrated on to generate clast, clast attachment is on the surface of the component to make the quality of device reduce.
In order to eliminate the problem of being caused by above-mentioned clast, processing method as described below is proposed: on a surface of the wafer
The protective film of polyvinyl alcohol (PVA) etc. is covered, protective film is passed through to wafer illumination laser beam, thus makes the clast to disperse will not
It is attached on device (for example, referring to patent document 2).
Patent document 1: Japanese Unexamined Patent Publication 6-120334 bulletin
Patent document 2: Japanese Unexamined Patent Publication 2004-188475 bulletin
As the method for the protective film in the surface of chip covering polyvinyl alcohol (PVA) etc., using skill as described below
Art: chip suction is maintained on rotary table, by liquid resins such as polyvinyl alcohol while rotating rotary table
It supplies to the central part of chip and carries out rotary coating.
But passing through rotary coating in the method that the surface of chip forms protective film, there are such problems: being difficult to
The liquid resinous major part for being formed uniformly protective film over the entire surface of the wafer, also, being supplied to due to centrifugal force and
It disperses, therefore, to use the liquid resin of sizable amount, it is not economical enough.
Summary of the invention
The present invention has been made in view of the above-described circumstances, and main technical task is to provide a kind of protective film covering side
Method and protective film cladding system, wherein passing through rotary coating in the method that the surface of chip forms protective film, even if reducing
The liquid resinous supply amount for forming protective film, also can form uniform protective film on the surface of chip.
In order to solve above-mentioned main technical task, according to the present invention, provide a kind of protection membrane covering method, be to
The method for covering liquid resin on the front of the chip laser machined and forming protective film, which is characterized in that the protective film
Covering method includes: that chip keeps process, and chip is maintained at rotary table in such a way that the front of the chip becomes upside
On；Liquid resin drips process, and liquid resin is dripped to the front middle section for the chip being maintained on rotary table
Place；Water layer formation process has liquid resinous chip to supply water, in the entire front of chip for dripping in front middle section
Upper formation water layer；Liquid resin diffusing procedure, rotates rotary table, with the rotation of chip, acts on the centrifugation of water layer
Power makes water layer disperse, and liquid resin is thus made to spread and form thin protective film layer on the entire front of chip；Liquid tree
Rouge supply step rotates rotary table with the speed slower than the liquid resin diffusing procedure, and to the entire front of chip
Supply the liquid resin for the amount more than process of dripping than the liquid resin；And protective film formation process, make rotary table with than
The fast speed rotation of the liquid resin supply step, with afer rotates, acting on liquid resinous centrifugal force makes liquid resin
Expansion, to form protective film on the entire front of chip.
In addition, in the present invention, providing a kind of protective film cladding system, being to cover liquid resin on the front side of the wafer
And form the device of protective film, which is characterized in that the protective film cladding system has: rotary table is glued by chip
The chip is kept in the state of being attached in protection band, the protection band is mounted on ring-shaped frame；Rotary-drive member, driving
Rotary table rotation；Water supply mechanism supplies water to the chip being pasted onto protection band, and the protection band is mounted on the rotation
On the ring-shaped frame that revolving worktable is kept；Liquid resin feed mechanism supplies liquid to the chip being pasted onto protection band
Resin, the protection band are mounted on the ring-shaped frame that the rotary table is kept；And control unit, control the rotation
Drive member, the water supply mechanism and the liquid resin feed mechanism, the control unit execute following process: liquid resin drips work
Sequence makes the liquid resin feed mechanism work and liquid resin is dripped to the chip being maintained on the rotary table just
At the middle section of face；Water layer formation process drips after process implementing the liquid resin, the water supply mechanism is made to work, right
There is liquid resinous chip supply water in dripping in front middle section, forms water layer on the entire front of chip；Liquid tree
Rouge diffusing procedure makes the Rotary-drive member work and rotate rotary table after implementing the water layer formation process,
With the rotation of chip, the centrifugal force for acting on water layer makes water layer disperse, thus make liquid resin spread and in the whole of chip
Thin protective film layer is formed on a front；Liquid resin supply step makes this after implementing the liquid resin diffusing procedure
Rotary-drive member works and rotates rotary table with the speed slower than the liquid resin diffusing procedure, and makes the liquid
The liquid resin of the work of resin feed mechanism and the amount that the entire front supply to chip is dripped more than process than the liquid resin；With
And protective film formation process makes the Rotary-drive member work and make to rotate after implementing the liquid resin supply step
Workbench is rotated with the speed faster than the liquid resin supply step, with the rotation of chip, acts on liquid resinous centrifugation
Power expands liquid resin, to form protective film on the entire front of chip.
Protection membrane covering method of the invention includes: that liquid resin drips process, and liquid resin is dripped to and is maintained at
At the front middle section of chip on rotary table；Water layer formation process has liquid for dripping in front middle section
The chip of resin supplies water, forms water layer on the entire front of chip；Liquid resin diffusing procedure, revolves rotary table
Turn, with the rotation of chip, the centrifugal force for acting on water layer makes water layer disperse, thus make liquid resin spread and in chip
Thin protective film layer is formed on entire front；Liquid resin supply step makes rotary table to spread work than the liquid resin
The slow speed rotation of sequence, and the liquid resin of amount that the entire front supply to chip is dripped more than process than the liquid resin；With
And protective film formation process, rotate rotary table with the speed faster than the liquid resin supply step, with afer rotates,
Acting on liquid resinous centrifugal force expands liquid resin, so that protective film is formed on the entire front of chip, therefore, benefit
Liquid resin is spread over the entire surface of the wafer with water layer and forms thin protective film layer, then, when to the entire of chip
When surface supplies liquid resin, it can be merged with thin protective film layer and equably covering protection over the entire surface of the wafer
Film.In addition, since liquid resin is merged with thin protective film layer well, liquid resinous mobility become well, because
This, can form the protective film of uniform thickness with less liquid resin amount in the whole surface of resin film.
Detailed description of the invention
Fig. 1 is the perspective view that the laser machine of simultaneous cleaning device is covered equipped with the protective film constituted according to the present invention.
Fig. 2 is the perspective view for the semiconductor wafer that machined object is used as chip.
Fig. 3 is a part of cutting that the protective film that will be mounted in laser machine shown in FIG. 1 covers simultaneous cleaning device
The perspective view shown afterwards.
Fig. 4 is to show to cover protective film shown in Fig. 3 and the rotary table of cleaning device is positioned at machined object and removes
Enter to move out the explanatory diagram of the state of position.
Fig. 5 is to show the rotary table that protective film shown in Fig. 3 covers simultaneous cleaning device being positioned at job position
The explanatory diagram of state.
Fig. 6 is to show the structural block diagram for constituting the control unit that protective film shown in Fig. 3 covers simultaneous cleaning device.
Fig. 7 is that liquid resin in protection membrane covering method of the invention drips the explanatory diagram of process.
Fig. 8 is the explanatory diagram of the water layer formation process in protection membrane covering method of the invention.
Fig. 9 is the explanatory diagram of the liquid resin diffusing procedure in protection membrane covering method of the invention.
Figure 10 is the explanatory diagram of the liquid resin supply step in protection membrane covering method of the invention.
Figure 11 is the explanatory diagram of the protective film formation process in protection membrane covering method of the invention.
Figure 12 is the explanatory diagram of the drying process in protection membrane covering method of the invention.
Figure 13 is the explanatory diagram for showing the laser machining process implemented using laser machine shown in FIG. 1.
Figure 14 is the important portion that the semiconductor wafer of laser processing groove is formed with by laser machining process shown in Figure 13
The enlarged cross-sectional view divided.
Label declaration
2: device housing；
3: chuck table；
4: laser light irradiation component；
41: laser beam oscillating member；
42: condenser；
5: imaging member；
6: display member；
7: protective film covers and cleaning element；
71: rotary workbench mechanism；
711: rotary table；
712: electric motor；
72: cleaning solution receiving member；
74: liquid resin feed mechanism；
740: liquid resin supply member；
741: resin supply nozzle；
75: water supply mechanism；
750: water supply component；
751: water supply nozzle；
76: air feed mechanism；
760: air supply member；
761: air supply nozzle；
10: semiconductor wafer；
11: box；
12: position alignment component；
13: chip moved member；
14: the 1 wafer transfer components；
15: the 2 wafer transfer components；
F: ring-shaped frame；
T: protection band.
Specific embodiment
Hereinafter, for the preferred embodiment of protection membrane covering method and protective film cladding system of the invention, referring to attached
Figure is described in detail.
In fig. 1 it is shown that equipped with the solid of the laser machine of protective film cladding system is constituted according to the present invention
Figure.
Laser machine 1 shown in FIG. 1 has the device housing 2 of substantially rectangular parallelepiped.In the device housing 2, with energy
It is enough that the mode moved on direction of feed and the index feed direction Y vertical with the processing direction of feed X is processed shown in arrow X
It is equipped with the chuck table 3 for keeping the chip as machined object.Chuck table 3 has absorption chuck fulcrum bearing 31 and peace
Absorption chuck 32 in the absorption chuck fulcrum bearing 31, by aspiration means (not shown), by the crystalline substance as machined object
Piece is maintained in the surface i.e. mounting surface of the absorption chuck 32.In addition, chuck table 3 is configured to through whirler (not shown)
Structure and can rotate.In the absorption chuck fulcrum bearing 31 of the chuck table 3 constituted in this way, it is equipped for fixing aftermentioned ring
The binding clasp 34 of shape frame.Also, laser machine 1 has: adding above-mentioned chuck table 3 along processing direction of feed X
The processing (not shown) of work feeding feeds component；With so that above-mentioned chuck table 3 is carried out index feed along index feed direction Y
Index feed component (not shown).
The laser machine 1 of diagram have laser light irradiation component 4, the laser light irradiation component 4 to being maintained on
The chip as machined object for stating chuck table 3 implements laser processing.Laser light irradiation component 4 has: laser beam
Oscillating member 41；With condenser 42, make to vibrate laser beam optically focused out by the laser beam oscillating member 41.In addition, swashing
Light processing machine 1 has that move the focal point position adjustment direction shown in the arrow Z of laser beam oscillating member 41 not shown
Mobile member, focal point position adjustment direction is the direction vertical with the upper surface of chuck table 3 i.e. mounting surface.
The laser machine 1 of diagram has imaging member 5, suction of the imaging member 5 to above-mentioned chuck table 3 is maintained at
The surface of machined object on attached chuck 32 is imaged, and detects to utilize the optically focused from above-mentioned laser light irradiation component 4
The region that the laser beam that device 42 irradiates is processed.The imaging member 5 is common in addition to being imaged using visible light
It except photographing element (CCD: charge-coupled device), is also made of following part: to the infrared ray of machined object irradiation infrared ray
Illuminating member；Capture the optical system of the infrared ray irradiated by the infrared illumination component；And output with by the optical system
The photographing element (infrared C CD) etc. for the corresponding electric signal of infrared ray that system captures, the figure that above-mentioned imaging member 5 will take
The signal of picture is delivered to aftermentioned control unit.In addition, the laser machine 1 of diagram has display member 6, the display member 6
The image taken by imaging member 5 is shown.
There is the laser machine 1 of diagram box mounting portion 11a, the box mounting portion 11a to make for loading to machined object
The box stored for the semiconductor wafer 10 of chip.At box mounting portion 11a, with can be by lift component (not shown)
The mode of lower movement is equipped with box workbench 111, and box 11 is placed on the box workbench 111.Semiconductor wafer 10 is stuck
On the surface of protection band T for being installed on ring-shaped frame F, and to be supported on the storage of the state of ring-shaped frame F via protection band T
In above-mentioned box 11.In addition, as shown in Fig. 2, a plurality of by arranging in lattice shape on the positive 10a of semiconductor wafer 10
Segmentation preset lines 101 mark off multiple regions, are formed with the devices such as IC, LSI 102 in the region marked off.About in this way
The semiconductor wafer 10 of composition, as shown in Figure 1, the face for being formed with segmentation preset lines 101 and device 102 with positive 10a is upper
Side, which pastes the back side, to be installed on the protection band T of ring-shaped frame F.
The laser machine 1 of diagram includes chip moved member 13, before being accommodated in the processing in above-mentioned box 11
Semiconductor wafer 10 move out to being disposed on the position alignment component 12 of interim placement section 12a, and by partly leading after processing
Body chip 10 is moved in box 11；1st wafer transfer component 14 will move out half to before the processing in position alignment members 12
Conductor chip 10 is transported to aftermentioned protective film and covers simultaneous cleaning device 7, and will cover simultaneous cleaning device 7 using protective film and exist
The semiconductor wafer 10 that surface covers protective film is transported on above-mentioned chuck table 3；And the 2nd wafer transfer component 15,
It will cover simultaneous cleaning device 7 by the finished conveying of semiconductor wafer 10 to protective film on chuck table 3.
Then, protective film is covered referring to Fig. 3 to Fig. 5 and cleaning device 7 is illustrated, protective film covering and cleaning dress
7 surface (machined surface) covering protection film for the i.e. semiconductor wafer 10 of machined object before processing is set, and will covering
Protective film on the surface of semiconductor wafer 10 after processing removes.
Protective film in embodiment illustrated covers and cleaning device 7 has rotary workbench mechanism 71 and is adapted to
Surround the cleaning solution receiving member 72 of the rotary workbench mechanism 71.Rotary workbench mechanism 71 has: rotary table 711；
As the electric motor 712 of Rotary-drive member, the rotary table 711 is driven to rotate；And supporting member 713, it will
The electric motor 712 is supported to and can move in the up-down direction.Rotary table 711 has the suction formed by porous material
Attached chuck 711a, the absorption chuck 711a are connected to aspiration means (not shown).Therefore, rotary table 711 will be used as and be added
The chip of work object is positioned on absorption chuck 711a, and so that negative pressure is worked using aspiration means (not shown), thus by chip
It is maintained on absorption chuck 711a.The upper end of the drive shaft 712a of electric motor 712 is connect with above-mentioned rotary table 711.On
Supporting member 713 is stated by multiple (being in the illustrated embodiment three) supporting leg 713a and multiple (in the embodiment party of diagram
It is three in formula) cylinder 713b composition, the multiple cylinder 713b links with supporting leg 713a respectively, and is installed on electronic horse
Up to 712.It, can be by electric motor 712 and rotation by making cylinder 713b work about the supporting member 713 constituted in this way
Workbench 711 is located in machined object carrying-in/carrying-out position and job position, and above-mentioned machined object carrying-in/carrying-out position is Fig. 4 institute
The top position shown, above-mentioned job position are lower position shown in fig. 5.
Above-mentioned cleaning solution receiving member 72 has: cleaning solution receives container 721；It supports the cleaning solution and receives container 721
Three (being shown in FIG. 3 two) supporting legs 722；And it is mounted on the cover portion on the drive shaft 712a of above-mentioned electric motor 712
Part 723.As shown in Figure 4 and Figure 5, cleaning solution receives container 721 by cylindric lateral wall 721a, bottom wall 721b and inner sidewall
721c is constituted.In the central portion of bottom wall 721b, the drive shaft 712a for above-mentioned electric motor 712 is provided with through the hole of insertion
721d, and be formed with from the periphery of hole 721d inner sidewall 721c outstanding upwards.In addition, as shown in figure 3, in bottom wall
721b is equipped with leakage fluid dram 721e, and is connected with excretory duct 724 on leakage fluid dram 721e.Above-mentioned cover member 723 is formed as
It is discoid, and have from its outer peripheral edge cover portion 723a outstanding downwards.Thus configured cover member 723 is oriented: working as electricity
When dynamic motor 712 and rotary table 711 are positioned in job position shown in fig. 5, cover portion 723a is constituting above-mentioned cleaning solution
The outer side band for receiving the inner sidewall 721c of container 721 is overlapped with inner sidewall 721c with a gap.
Protective film in embodiment illustrated covers and cleaning device 7 has liquid resin feed mechanism 74, the liquid
Resin feed mechanism 74 is to the machined object before the processing for the being held in above-mentioned rotary table 711 i.e. surface of semiconductor wafer 10
(machined surface) supplies liquid resin.Liquid resin feed mechanism 74 includes resin supply nozzle 741, rotates to being held in
The surface (machined surface) of semiconductor wafer 10 before the processing of workbench 711 supplies liquid resin；And electric motor 742,
It can be rotated and reverse, and swing the resin supply nozzle 741, and resin supply nozzle 741 and liquid resin supply structure
Part 740 (referring to Fig. 4 and Fig. 5) connection.Resin supply nozzle 741 is by the spray nozzle part 741a that horizontally extends and from the spray nozzle part
The supporting part 741b that 741a is extended downward is constituted, and supporting part 741b, which is adapted to run through to be inserted in, constitutes above-mentioned cleaning solution reception
What is be arranged on the bottom wall 721b of container 721 is (not shown) through inserting in the hole, and with liquid resin supply member 740 (referring to Fig. 4
And Fig. 5) connection.In addition, running through the (not shown) through insertion hole of insertion in the supporting part 741b of resin supply nozzle 741
It is equipped on periphery to the seal member (not shown) being sealed between through hole and supporting part 741b.
Protective film in embodiment illustrated covers and cleaning device 7 has water supply mechanism 75, which uses
In to the machined object after the processing being held on above-mentioned rotary table 711 i.e. semiconductor wafer 10 supply water.Water supply mechanism
75 include water supply nozzle 751, supply water to the chip for being held in rotary table 711；And electric motor 752, it can
It rotates and reverse, for swinging the water supply nozzle 751, the water supply nozzle 751 and water supply component 750 (referring to Fig. 4 and Fig. 5) are even
It connects.Water supply nozzle 751 is by horizontally extending and terminal part curved spray nozzle part 751a and from the base of spray nozzle part 751a downwards
The supporting part 751b extended downward is held to constitute, supporting part 751b, which is adapted to run through to be inserted in constitute above-mentioned cleaning solution and receive, to be held
What is be arranged on the bottom wall 721b of device 721 is (not shown) through inserting in the hole, and even with water supply component 750 (referring to Fig. 4 and Fig. 5)
It connects.In addition, being equipped in the peripheral region (not shown) through insertion hole that the supporting part 751b of water supply nozzle 751 runs through insertion
To the seal member (not shown) being sealed between the through hole and supporting part 751b.
In addition, the protective film in embodiment illustrated covers and cleaning device 7 has air feed mechanism 76, the air
Feed mechanism 76 is used to supply to the machined object after the processing being held on above-mentioned rotary table 711 i.e. semiconductor wafer 10
Air.Air feed mechanism 76 includes air supply nozzle 761, the chip to after the cleaning for being held in rotary table 711
Spray air；And electric motor 762, it can rotate and reverse, for swinging the air supply nozzle 761, the air
Supply nozzle 761 is connect with air supply member 760 (referring to Fig. 4 and Fig. 5).Air supply nozzle 761 by horizontally extending and
Terminal part curved spray nozzle part 761a and the supporting part 761b structure extended downward from the cardinal extremity of spray nozzle part 761a downwards
At supporting part 761b is adapted to be arranged not on the bottom wall 721b for being inserted in the above-mentioned cleaning solution reception container 721 of composition
Running through for diagram inserts in the hole, and connect with air supply member 760 (referring to Fig. 4 and Fig. 5).In addition, in air supply nozzle
The peripheral region that 761 supporting part 761b runs through the through hole (not shown) of insertion is equipped with to the through hole and supporting part 761b
Between the seal member (not shown) that is sealed.
Protective film in embodiment illustrated covers and cleaning device 7 has control unit 8 shown in fig. 6.The control
Unit 8 supplies machine according to electric motor 712 and cylinder 713b, liquid resin of the control program to above-mentioned rotary workbench mechanism 71
The liquid resin supply member 740 and electric motor 742 of structure 74, the water supply component 750 of water supply mechanism 75 and electric motor 752,
Air supply member 760 and electric motor 762 of air feed mechanism 76 etc. are controlled.In addition, control unit 8 can also be simultaneous
As the control unit for making each mechanism of laser machine work.
It is equipped with the composition as described above of laser machine 1 that above-mentioned protective film covers simultaneous cleaning device 7, below to it
Movement is illustrated.
As shown in Figure 1, the semiconductor wafer 10 before the processing being supported on ring-shaped frame F via protection band T is (hereinafter, letter
Referred to as semiconductor wafer 10) upside is become using the positive 10a as machined surface in a manner of be accommodated in the defined position of box 11.
By moving up and down box workbench 111 using lift component (not shown), will be accommodated at the defined position of box 11
Semiconductor wafer 10 before processing, which is located in, moves out position.Then, chip moved member 13 carries out moving back and forth, will position
It moves out in the semiconductor wafer 10 for moving out position to the position alignment component 12 being disposed at interim placement section 12a.Utilize position
It sets alignment members 12 and makes to move out to the semiconductor wafer 10 on position alignment component 12 and be directed at defined position.Then, by the 1st
The revolution of wafer transfer component 14 is acted the semiconductor die before the processing for having carried out position alignment by position alignment component 12
In the conveying of piece 10 to the absorption chuck 711a for constituting the rotary table 711 that protective film covers simultaneous cleaning device 7, and aspirate holding
In absorption chuck 711a (chip holding process).It is removed at this point, rotary table 711 is positioned in machined object shown in Fig. 4
Enter and move out position, resin supply nozzle 741, water supply nozzle 751 and air supply nozzle 761 are determined like that as shown in Figure 3 and Figure 4
Position is in the position of readiness left from the top of rotary table 711.
The semiconductor wafer 10 before processing is remained into the rotary table that protective film covers simultaneous cleaning device 7 implementing
After chip on 711 keeps process, implement in the machined surface of semiconductor wafer 10 to be the protection of covering protection film on the 10a of front
Film covering process.In the protective film covering process, implementation liquid resin first drips process, drips process in the liquid resin
In, it drips to the middle section of the positive 10a as machined surface for the semiconductor wafer 10 being held on rotary table 711
Liquid resin.That is, control unit 8 makes the cylinder 713b of supporting member 713 work so that rotary table 711 is positioned at operation position
Set, and make liquid resin feed mechanism 74 electric motor 742 work with by the spray nozzle part 741a of resin supply nozzle 741 such as
It is positioned as shown in Figure 7 to the machined surface i.e. center of front 10a for the semiconductor wafer 10 being held on rotary table 711
Above portion.Then, control unit 8 makes liquid resin supply member 740 work, and implements liquid resin and drips process, in the liquid
Under drop of resin in process, into the machined surface i.e. front 10a for the semiconductor wafer 10 being held on rotary table 711
Drip the liquid resin 110 of specified amount in centre region.When the semiconductor wafer 10 as machined object diameter be 200mm the case where
Under, it is 2~3cc in the drip amount of the liquid resin 110 to drip in process of the liquid resin.In addition, being dripped in liquid resin
The liquid resin 110 to drip in lower process is preferably such as PVA (Poly Vinyl Alcohol: polyvinyl alcohol), PEG (Poly
Ethylene Glycol: polyethylene glycol), PEO (Poly Ethylene Oxide: polyethylene glycol oxide) etc. it is water-soluble against corrosion
Agent.
It drips after process implementing above-mentioned liquid resin, implements water layer formation process, it is right in the water layer formation process
There is liquid resinous semiconductor wafer 10 to supply water in dripping in face center region, the shape in the whole surface of semiconductor wafer 10
At water layer.That is, control unit 8 so that the electric motor 742 of liquid resin feed mechanism 74 is worked and by resin supply nozzle 741
Spray nozzle part 741a is positioned at position of readiness.Then, control unit 8 makes the electric motor 752 of water supply mechanism 75 work and will supply water
The spray nozzle part 751a of nozzle 751 is positioned as illustrated in fig. 8 to the front for the semiconductor wafer 10 being held on rotary table 711
Above the central portion of 10a.Then, control unit 8 makes water supply component 750 work, and supplies from the spray nozzle part 751a of water supply nozzle 751
Water.In addition, being supplied in water layer formation process in the case where being 200mm as the diameter of the semiconductor wafer 10 of machined object
The amount for the water given is 200cc or so.The water supplied like this is equipped with the protection for having pasted semiconductor wafer 10 in arrival
Behind the upper surface of ring-shaped frame F with T, water, which can be full of, is formed by region by the inner peripheral surface and protection band T of ring-shaped frame F, by
It is that this formation covers the machined surface i.e. front 10a for the semiconductor wafer 10 being maintained on rotary table 711, thick
Degree is the water layer 120 of 1~3mm or so.
After implementing above-mentioned water layer formation process, implement liquid resin diffusing procedure, spreads work in the liquid resin
In sequence, rotate rotary table 711, as semiconductor wafer 10 rotates, the centrifugal force for acting on water layer makes water layer disperse,
Thus liquid resin is spread, forms relatively thin protective film layer in the whole surface of semiconductor wafer 10.That is, as implementing
Liquid resin diffusing procedure: as shown in (a) of Fig. 9, control unit 8 makes the electric motor 712 of rotary workbench mechanism 71 work
And rotary table 711 is rotated, with the rotation of semiconductor wafer 10, the centrifugal force for acting on water layer 120 flies water layer
It dissipates and expands liquid resin 110, as a result, as (b) of Fig. 9 in the whole surface of the positive 10a of semiconductor wafer 10
Form relatively thin protective film layer 111.In the liquid resin diffusing procedure, liquid resin 110 can be made half using water layer 120
It spreads in the whole surface of the positive 10a of conductor chip 10 and forms relatively thin protective film layer 111.In addition, expanding in liquid resin
In day labor sequence, control unit 8 makes the electric motor 712 of rotary workbench mechanism 71 work and make rotary table 711 along arrow
Shown in direction rotated 5 seconds with the revolving speed of such as 2000rpm.
After implementing above-mentioned liquid resin diffusing procedure, implement liquid resin supply step, is supplied in the liquid resin
To rotating rotary table 711 with the speed slower than liquid resin diffusing procedure, and to the whole of semiconductor wafer 10
The supply of a surface is dripped the liquid resin of the amount more than process than above-mentioned liquid resin.That is, control unit 8 makes so as shown in Figure 10
The electric motor 712 of rotary workbench mechanism 71 works so that rotary table 711 is with the speed slower than liquid resin diffusing procedure
Degree be such as 45rpm revolving speed rotate 15 seconds, also, make liquid resin supply member 740 work with to be held in rotation
The machined surface of the semiconductor wafer 10 of workbench 711 is that the whole surface of front 10a is supplied and dripped work than above-mentioned liquid resin
The liquid resin 110 of amount more than sequence.At this point, control unit 8 make liquid resin feed mechanism 74 electric motor 742 work so that
The spray nozzle part 741a of resin supply nozzle 741 is swung in required angular range, and is being held in rotation as illustrated in fig. 10
The central portion of semiconductor wafer 10 on revolving worktable 711 is moved between peripheral part.The liquid resin drips and supplies in process
The amount of liquid resin 110 be 15cc or so.
After implementing above-mentioned liquid resin supply step, implement protective film formation process, forms work in the protective film
In sequence, rotate rotary table 711 with the speed faster than liquid resin supply step, also, with semiconductor wafer 10
Rotation, acting on liquid resinous centrifugal force expands liquid resin, thus the shape on the entire front 10a of semiconductor wafer 10
At protective film.That is, control unit 8 makes the electric motor 712 of rotary workbench mechanism 71 work so that rotation as illustrated in fig. 11
Workbench 711 is rotated 60 seconds with the revolving speed that the speed faster than above-mentioned liquid resin supply step is such as 2000rpm.Its result
It is that, as the semiconductor wafer 10 being held on rotary table 711 rotates, the centrifugal force for acting on liquid resin 110 makes liquid
State resin 110 is expanded, to form protective film 112 on the entire front 10a of semiconductor wafer 10.It is supplied in the liquid resin
In process, relatively thin protection is formd in the positive 10a of semiconductor wafer 10 by implementing above-mentioned liquid resin diffusing procedure
Film layer 111 (referring to Fig.1 0), therefore, liquid resinous mobility becomes well, therefore, can be existed with less liquid resin amount
The protective film 112 of uniform thickness is formed in the whole surface of resin film.
Then, implement following such drying processes: control unit 8 makes rotary workbench mechanism 71 as shown in Figure 12
Electric motor 712 work so that the direction shown in the arrow of rotary table 711 is rotated 120 seconds with the revolving speed of 500rpm,
It is rotarily dried as a result,.At this time, it is preferred that control unit 8 makes the electric motor 762 of air feed mechanism 76 work, will
The spray nozzle part 761a of air supply nozzle 761 is positioned within as illustrated in fig. 12 in the semiconductor die on rotary table 711
The machined surface of piece 10 is so that air supply member 760 is worked with to being covered in semiconductor on one side above the central portion of front 10a
The machined surface of chip 10 is that the protective film 112 on the 10a of front supplies air, makes the spray nozzle part of air supply nozzle 761 on one side
761a is swung in required angular range.
The covering protection film 112 on the machined surface i.e. front 10a of semiconductor wafer 10 is being implemented as described above
After protective film covering process, rotary table 711 is positioned at machined object carrying-in/carrying-out shown in Fig. 4 position, and release
The suction for the semiconductor wafer 10 being held on rotary table 711 is kept.Then, the semiconductor on rotary table 711
Chip 10 is transported on the absorption chuck 32 of chuck table 3 by the 2nd wafer transfer component 15, and is taken out by the absorption chuck 32
It inhales and keeps.Component is fed by processing (not shown), the chuck table 3 that such suction remains semiconductor wafer 10 is positioned
To the underface for the imaging member 5 for being disposed in laser light irradiation component 4.
When chuck table 3 is positioned in the underface of imaging member 5, imaging member 5 and control (not shown) are utilized
Unit implements the image procossings such as pattern match, the calibration of Lai Zhihang laser light irradiation position, at the images such as described pattern match
Reason is segmentation preset lines 101 for carrying out being formed in semiconductor wafer 10 along defined direction and shines along segmentation preset lines 101
Penetrate the processing of the position alignment of the condenser 42 of the laser light irradiation component 4 of laser beam.In addition, for being formed in semiconductor
On chip 10 along the segmentation preset lines 101 extended at a right angle with above-mentioned defined direction, similarly execution laser light
The calibration of line irradiation position.Although at this point, semiconductor wafer 10 formation have segmentation preset lines 101 positive 10a on formed
There is protective film 112, still, in the case where protective film 112 is opaque, can use infrared ray and imaged from surface progress
Calibration.
In the segmentation preset lines for detecting to be formed on the semiconductor wafer 10 for being held in chuck table 3 as described above
101 and after having carried out the calibration of laser light irradiation position, chuck table 3 is moved to irradiation laser light as shown in the figure
The laser light irradiation region that the condenser 42 of the laser light irradiation component 4 of line is located at, by defined segmentation preset lines 101
It is located in the underface of condenser 42.At this point, semiconductor wafer 10 is positioned to make to divide preset lines as shown in (a) of Figure 13
101 one end (being left end in (a) of Figure 13) is located at the underface of condenser 42.Then, from laser light irradiation component 4
42 irradiated with pulse laser light of condenser, at the same make chuck table 3 into (a) in Figure 13 with direction shown in arrow X1 with
Defined processing feed speed is mobile.Then, as shown in (b) of Figure 13, when the other end of segmentation preset lines 101 is (Figure 13's
(b) be right end in) reach the following position directly of condenser 42 after, stop irradiated with pulse laser light, and make chuck table 3 i.e.
Semiconductor wafer 10 stops movement.In the laser processing groove formation process, the focal point P of pulse laser light is directed at segmentation
Near the surface of preset lines 101.
By implementing above-mentioned laser light irradiation process, as shown in figure 14, in the segmentation preset lines 101 of semiconductor wafer 10
Place forms laser processing groove 140.At this point, as shown in figure 14, even if producing clast 150 due to irradiation laser beam, this is broken
Bits 150 can also be obstructed by protective film 112 without being attached on device 102 and pad etc..In the laser light irradiation process,
Due to the protective film 112 being formed on the machined surface i.e. front 10a of semiconductor wafer 10 be as described above it is uniform, can
Form stable laser processing groove 140.Also, above-mentioned laser light is implemented to all segmentation preset lines 101 of semiconductor wafer 10
Line irradiation process.
In addition, above-mentioned laser light irradiation process for example carries out under processing conditions below.
The light source of laser beam: YVO4 laser or YAG laser
Wavelength: 355nm
Repetition rate: 50kHz
Output: 4W
Spot diameter: 9.2 μm
Processing feed speed: 200mm/ seconds
After all segmentation preset lines 101 along semiconductor wafer 10 implement above-mentioned laser light irradiation process, make
The chuck table 3 that remain semiconductor wafer 10 is back to the position that initially suction keeps semiconductor wafer 10, and here
The suction to semiconductor wafer 10 is released to keep.Then, semiconductor wafer 10 is transported to structure using the 2nd wafer transfer component 15
On the absorption chuck 711a for covering the rotary table 711 of simultaneous cleaning device 7 at protective film, and aspirates and be held in the absorption chuck
711a.At this point, as shown in Figure 3 and Figure 4, resin supply nozzle 741, air nozzle 751 and remover liquid nozzle 761 be positioned in from
The position of readiness that the top of rotary table 711 is left.
Semiconductor wafer 10 after processing is being maintained on the rotary table 711 that protective film covers simultaneous cleaning device 7
Afterwards, cleaning process is executed.That is, rotary table 711 is located in job position, and make the electric motor 752 of water supply mechanism 75
Work, the spray nozzle part 751a of water supply nozzle 751 is positioned to the center for the semiconductor wafer 10 being held on rotary table 711
Above portion.Then, rotate rotary table 711 with the revolving speed of such as 800rpm, at the same so that water supply component 750 is worked and from spray
Mouth 751a water spray.In addition, spray nozzle part 751a is made of so-called two-fluid spray nozzle, supply pressure is 0.2MPa's or so
Water, and supply pressure is about the air of 0.3~0.5MPa, and in this case, water is sprayed by means of the pressure of air, and energy
Enough machined surfaces to semiconductor wafer 10 are that cleaning is effectively performed in front 10a.At this point, electric motor 752 is made to work, make from confession
The water that the spray nozzle part 751a of (operating) water nozzle 751 sprays is from the center for being sprayed onto the semiconductor wafer 10 for being held in rotary table 711
Position is until being sprayed onto the position of peripheral part of the semiconductor wafer 10, swings in required angular range.Its result
For, since the protective film 112 being covered on the positive 10a of semiconductor wafer 10 is formed by water-soluble resin as described above, so
Protective film can be easily washed out, and the clast 150 generated in laser processing can be also removed.
After above-mentioned cleaning process, drying process is executed.That is, water supply nozzle 751 is located in position of readiness, and make
Rotary table 711 is rotated 15 seconds or so with the revolving speed of such as 3000rpm.At this time, it is preferred that make air feed mechanism 76
Electric motor 762 works, and the spray nozzle part 761a for supplying air to nozzle 761 is positioned to half be held on rotary table 711
The machined surface of conductor chip 10 is so that air supply member 760 is worked with to semiconductor on one side above the central portion of front 10a
The machined surface of chip 10 is that front 10a supplies air, makes the spray nozzle part 761a of air supply nozzle 761 required on one side
It is swung in angular range.
After completing the cleaning and drying to the semiconductor wafer 10 after processing as described above, make rotary table
711 stop rotating, and the air supply nozzle 761 for supplying air to mechanism 76 is located in position of readiness.Then, by rotary work
Platform 711 positions machined object carrying-in/carrying-out shown in Fig. 4 position, and releases to being maintained at partly leading on rotary table 711
The suction of body chip 10 is kept.Then, using the 1st wafer transfer component 14 by partly leading after the processing on rotary table 711
Body chip 10, which moves out, to be disposed on the position alignment component 12 of interim placement section 12a.It will using chip moved member 13
It moves out to the semiconductor wafer 10 after the processing in position alignment members 12 and is received at the specified position of box 11.
More than, based on embodiment illustrated, the present invention is described, but the present invention is not limited in embodiment party
Formula can carry out various modifications in the range of the purport of the present invention.For example, in the above-described embodiment, showing will protect
Film cladding system is disposed in the example on laser machine, but can also come protective film cladding system as independent device
It constitutes.
Claims (2)
1. a kind of protection membrane covering method is to cover liquid resin on the front of the chip of pending laser processing and formed
The method of protective film, which is characterized in that
The protection membrane covering method includes:
Chip keeps process, and chip is maintained on rotary table in such a way that the front of the chip becomes upside；
Liquid resin drips process, and liquid resin is dripped to the front middle section for the chip being maintained on rotary table
Place；
Water layer formation process has liquid resinous chip to supply water for dripping in front middle section, chip it is entire just
Water layer is formed on face；
Liquid resin diffusing procedure, rotates rotary table, and with the rotation of chip, the centrifugal force for acting on water layer makes water
Layer disperses, and liquid resin is thus made to spread and form thin protective film layer on the entire front of chip；
Liquid resin supply step rotates rotary table with the speed slower than the liquid resin diffusing procedure, and to chip
Entire front supply drip than the liquid resin liquid resin of the amount more than process；And
Protective film formation process rotates rotary table with the speed faster than the liquid resin supply step, as chip revolves
Turn, acting on liquid resinous centrifugal force expands liquid resin, to form protective film on the entire front of chip.
2. a kind of protective film cladding system is the device for covering liquid resin on the front side of the wafer and forming protective film,
It is characterized in that,
The protective film cladding system has:
Rotary table, keeps the chip in the state that chip is pasted onto protection band, and the protection band is mounted on ring
On shape frame；
Rotary-drive member drives the rotary table to rotate；
Water supply mechanism supplies water to the chip being pasted onto protection band, and the protection band is mounted on the rotary table and is protected
On the ring-shaped frame held；
Liquid resin feed mechanism supplies liquid resin to the chip being pasted onto protection band, and the protection band is mounted on this
On the ring-shaped frame that rotary table is kept；And
Control unit controls the Rotary-drive member, the water supply mechanism and the liquid resin feed mechanism,
The control unit executes following process:
Liquid resin drips process, and the liquid resin feed mechanism is made to work and drip to liquid resin and be maintained at the rotation
At the front middle section of chip on workbench；
Water layer formation process drips after process implementing the liquid resin, so that the water supply mechanism is worked, in front
Centre region, which is dripped, liquid resinous chip supply water, forms water layer on the entire front of chip；
Liquid resin diffusing procedure makes the Rotary-drive member work and make to rotate after implementing the water layer formation process
Worktable rotary, with the rotation of chip, the centrifugal force for acting on water layer makes water layer disperse, thus make liquid resin spread and
Thin protective film layer is formed on the entire front of chip；
Liquid resin supply step makes the Rotary-drive member work and make after implementing the liquid resin diffusing procedure
Rotary table is rotated with the speed slower than the liquid resin diffusing procedure, and so that the liquid resin feed mechanism is worked and to
The entire front supply of chip is dripped the liquid resin of the amount more than process than the liquid resin；And
Protective film formation process makes the Rotary-drive member work and make to revolve after implementing the liquid resin supply step
Revolving worktable is rotated with the speed faster than the liquid resin supply step, with the rotation of chip, act on it is liquid resinous from
Mental and physical efforts expand liquid resin, to form protective film on the entire front of chip.
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| JP2014168175A JP6328522B2 (en) | 2014-08-21 | 2014-08-21 | Protective film coating method and protective film coating apparatus |
| JP2014-168175 | 2014-08-21 |
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| JP (1) | JP6328522B2 (en) |
| KR (1) | KR102317696B1 (en) |
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| JP6767814B2 (en) * | 2016-09-05 | 2020-10-14 | 株式会社ディスコ | Manufacturing method of packaged device chip |
| CN108538733B (en) * | 2017-03-02 | 2021-06-11 | 韩国科泰高科株式会社 | Coating device for sensor package and sensor package manufactured using same |
| JP6899265B2 (en) * | 2017-06-27 | 2021-07-07 | 東京エレクトロン株式会社 | Coating treatment method, coating treatment equipment and storage medium |
| JP6606239B1 (en) | 2018-08-22 | 2019-11-13 | 株式会社オリジン | Method for manufacturing coated object |
| CN114351960B (en) * | 2021-12-20 | 2023-09-22 | 广东博智林机器人有限公司 | Construction method and wall construction system |
| KR20230100185A (en) | 2021-12-28 | 2023-07-05 | 세메스 주식회사 | Irradiating module, and apparatus for treating substrate with the same |
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| JPH06120334A (en) | 1992-10-08 | 1994-04-28 | Mitsubishi Electric Corp | Silicon wafer dicing equipment |
| JP2004188475A (en) | 2002-12-13 | 2004-07-08 | Disco Abrasive Syst Ltd | Laser machining method |
| JP2008006379A (en) * | 2006-06-29 | 2008-01-17 | Disco Abrasive Syst Ltd | Protection film formation method |
| JP5091722B2 (en) * | 2008-03-04 | 2012-12-05 | 東京エレクトロン株式会社 | Coating processing method, program, computer storage medium, and coating processing apparatus |
| JP5385060B2 (en) * | 2009-09-07 | 2014-01-08 | 株式会社ディスコ | Protective film coating method and protective film coating apparatus |
| JP5587595B2 (en) * | 2009-12-11 | 2014-09-10 | 株式会社ディスコ | Laser processing equipment |
| JP5715859B2 (en) * | 2011-03-18 | 2015-05-13 | 株式会社ディスコ | Protective film coating method and protective film coating apparatus |
| JP6166034B2 (en) * | 2012-11-22 | 2017-07-19 | 株式会社ディスコ | Wafer processing method |
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| JP6328522B2 (en) | 2018-05-23 |
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| JP2016043293A (en) | 2016-04-04 |
| KR20160023572A (en) | 2016-03-03 |
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