CN105390405A - Protective film coating method and protective film coating device - Google Patents
Protective film coating method and protective film coating device Download PDFInfo
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- CN105390405A CN105390405A CN201510504881.5A CN201510504881A CN105390405A CN 105390405 A CN105390405 A CN 105390405A CN 201510504881 A CN201510504881 A CN 201510504881A CN 105390405 A CN105390405 A CN 105390405A
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- liquid resin
- wafer
- rotary table
- diaphragm
- water layer
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- 238000000034 method Methods 0.000 title claims abstract description 81
- 230000001681 protective effect Effects 0.000 title claims abstract description 24
- 239000007888 film coating Substances 0.000 title abstract 4
- 238000009501 film coating Methods 0.000 title abstract 4
- 239000007788 liquid Substances 0.000 claims abstract description 164
- 239000011347 resin Substances 0.000 claims abstract description 160
- 229920005989 resin Polymers 0.000 claims abstract description 160
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 80
- 238000012545 processing Methods 0.000 claims description 36
- 230000015572 biosynthetic process Effects 0.000 claims description 22
- 238000005253 cladding Methods 0.000 claims description 11
- 235000012431 wafers Nutrition 0.000 description 157
- 239000004065 semiconductor Substances 0.000 description 86
- 238000004140 cleaning Methods 0.000 description 33
- 239000007921 spray Substances 0.000 description 24
- 230000011218 segmentation Effects 0.000 description 18
- 238000010521 absorption reaction Methods 0.000 description 16
- 239000012530 fluid Substances 0.000 description 13
- 238000003384 imaging method Methods 0.000 description 11
- 238000010586 diagram Methods 0.000 description 9
- 239000004372 Polyvinyl alcohol Substances 0.000 description 8
- 229920002451 polyvinyl alcohol Polymers 0.000 description 8
- 235000019422 polyvinyl alcohol Nutrition 0.000 description 8
- 238000012546 transfer Methods 0.000 description 8
- 230000002093 peripheral effect Effects 0.000 description 6
- 238000001035 drying Methods 0.000 description 5
- 239000002202 Polyethylene glycol Substances 0.000 description 4
- 238000003780 insertion Methods 0.000 description 4
- 230000037431 insertion Effects 0.000 description 4
- 230000001678 irradiating effect Effects 0.000 description 4
- 229920001223 polyethylene glycol Polymers 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000005286 illumination Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 229920003171 Poly (ethylene oxide) Polymers 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 229910009372 YVO4 Inorganic materials 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- ZZUFCTLCJUWOSV-UHFFFAOYSA-N furosemide Chemical compound C1=C(Cl)C(S(=O)(=O)N)=CC(C(O)=O)=C1NCC1=CC=CO1 ZZUFCTLCJUWOSV-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Dicing (AREA)
- Coating Apparatus (AREA)
- Laser Beam Processing (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
The invention provides a protective film coating method and a protective film coating device. The method comprises the steps: a wafer holding process for holding a wafer on a revolving table as the front surface of the wafer is upward; a liquid resin dripping process for dripping the liquid resin to the front central area of the wafer; a water layer forming process for forming a water layer by providing water to the whole front surface of the wafer on which central area has dripping liquid resin; a liquid resin diffusing process, that is, the revolving table is revolved, with the revolving of the wafer, the water layer flies away because of the centrifugal force acted on the water layer, and the liquid resin diffuses and forms a thin protective film layer on the whole front surface; a liquid resin supplying process, that is, the revolving table revolves slow than the same in the liquid diffusing process and supplies liquid resin on the whole front surface more than the dripped liquid resin in the liquid resin dripping process; and a protective film forming process, that is, the revolving table revolves faster than the same in the liquid resin supplying process, with the revolving of the wafer, the centrifugal force acted on the liquid resin to diffuse the liquid resin to form a protective film on the whole front surface.
Description
Technical field
The present invention relates to diaphragm covering method and the diaphragm cladding system of covered with protective film on the machined surface of the machined objects such as semiconductor wafer.
Background technology
In semiconductor device manufacturing process, the surface of the roughly semiconductor wafer of circular plate shape utilizes the segmentation preset lines being called as spacing track of the arrangement in clathrate mark off multiple region, in the region that this marks off, form the device such as IC (integratedcircuit: integrated circuit), LSI (large-scaleintegration: large scale integrated circuit).Then, by semiconductor wafer is cut off along spacing track, the region being formed with device is split, thus produce device one by one.
As the method that the wafers such as such semiconductor wafer or optical device wafer are split along segmentation preset lines, proposition has following methods: by forming laser processing groove along the segmentation preset lines irradiated with pulse laser light being formed at wafer, and utilize mechanical disrumpent feelings device to cut off along this laser processing groove.(for example, referring to patent documentation 1)
, when along the segmentation preset lines irradiating laser light of wafer, can produce new problem as described below: centralized heat energy is in irradiated region thus produce chip, the attachment of this chip on the surface of the component thus the quality of device is reduced.
In order to eliminate the problem caused by above-mentioned chip; propose processing method as described below: the diaphragm covering polyvinyl alcohol (PVA) etc. on a surface of the wafer; through diaphragm to wafer illumination laser beam; make the chip dispersed can not be attached to (for example, referring to patent documentation 2) on device thus.
Patent documentation 1: Japanese Unexamined Patent Publication 6-120334 publication
Patent documentation 2: Japanese Unexamined Patent Publication 2004-188475 publication
As the method for the diaphragm of the surface coverage polyvinyl alcohol (PVA) at wafer etc.; have employed technology as described below: remain on rotary table by wafer suction, make rotary table rotate the central part liquid resins such as polyvinyl alcohol being supplied to wafer and carry out rotary coating.
; formed in the method for diaphragm by rotary coating on the surface of wafer; there is such problem: be difficult to be formed uniformly diaphragm over the entire surface of the wafer; and; the liquid resinous major part be supplied to is dispersed due to centrifugal force; therefore, the liquid resin of sizable amount be used, economical not.
Summary of the invention
The present invention completes in view of the foregoing; its main technical task is to provide a kind of diaphragm covering method and diaphragm cladding system; wherein; formed in the method for diaphragm by rotary coating on the surface of wafer; even if reduce the liquid resinous quantity delivered forming diaphragm, also uniform diaphragm can be formed on the surface of wafer.
In order to solve above-mentioned main technical task, according to the present invention, a kind of diaphragm covering method is provided, it is the method covering liquid resin and form diaphragm on the front of the wafer of pending laser processing, it is characterized in that, this diaphragm covering method comprises: wafer keeps operation, remains on rotary table by the mode that wafer becomes upside with the front of this wafer; Liquid resin drips operation, liquid resin is dripped to the middle section place, front of the wafer be maintained on rotary table; Water layer formation process, for the liquid resinous wafer that dripped at front middle section for feedwater, the whole front of wafer forms water layer; Liquid resin diffusing procedure, makes rotary table rotate, and along with the rotation of wafer, the centrifugal force acting on water layer makes water layer disperse, and makes liquid resin spread and on the whole front of wafer, form thin protective film thus; Liquid resin supply step, makes rotary table rotate with the speed slower than this liquid resin diffusing procedure, and the liquid resin of the many amount of operation of dripping than this liquid resin to the whole front supply of wafer; And diaphragm formation process, rotary table is rotated with the speed faster than this liquid resin supply step, along with wafer rotates, acts on liquid resinous centrifugal force and liquid resin is expanded, thus form diaphragm on the whole front of wafer.
In addition, in the present invention, a kind of diaphragm cladding system is provided, it is the device covering liquid resin on the front side of the wafer and form diaphragm, it is characterized in that, described diaphragm cladding system possesses: rotary table, and it keeps this wafer being pasted onto by wafer under the state on boundary belt, and described boundary belt is arranged on ring-shaped frame; Rotary-drive member, it drives this rotary table to rotate; Water supply mechanism, it is to the wafer that is pasted onto on boundary belt for feedwater, and described boundary belt is arranged on the ring-shaped frame that this rotary table keeps; Liquid resin feed mechanism, it is to the wafer supply liquid resin be pasted onto on boundary belt, and described boundary belt is arranged on the ring-shaped frame that this rotary table keeps; And control unit, it controls this Rotary-drive member, this water supply mechanism and this liquid resin feed mechanism, this control unit performs following operation: liquid resin drips operation, makes this liquid resin feed mechanism work and liquid resin is dripped to the middle section place, front of the wafer be maintained on this rotary table; Water layer formation process, drips after operation implementing this liquid resin, makes this water supply mechanism work, for the liquid resinous wafer that dripped at front middle section for feedwater, the whole front of wafer forms water layer; Liquid resin diffusing procedure, after implementing this water layer formation process, make this Rotary-drive member work and rotary table is rotated, along with the rotation of wafer, the centrifugal force acting on water layer makes water layer disperse, and makes liquid resin spread and on the whole front of wafer, form thin protective film thus; Liquid resin supply step, after implementing this liquid resin diffusing procedure, make this Rotary-drive member work and rotary table is rotated with the speed slower than this liquid resin diffusing procedure, and making this liquid resin feed mechanism work and the liquid resin of the many amount of operation of dripping than this liquid resin to the whole front supply of wafer; And diaphragm formation process; after implementing this liquid resin supply step; make this Rotary-drive member work and rotary table is rotated with the speed faster than this liquid resin supply step; along with the rotation of wafer; acting on liquid resinous centrifugal force makes liquid resin expand, thus forms diaphragm on the whole front of wafer.
Diaphragm covering method of the present invention comprises: liquid resin drips operation, liquid resin is dripped to the middle section place, front of the wafer be maintained on rotary table; Water layer formation process, for the liquid resinous wafer that dripped at front middle section for feedwater, the whole front of wafer forms water layer; Liquid resin diffusing procedure, makes rotary table rotate, and along with the rotation of wafer, the centrifugal force acting on water layer makes water layer disperse, and makes liquid resin spread and on the whole front of wafer, form thin protective film thus; Liquid resin supply step, makes rotary table rotate with the speed slower than this liquid resin diffusing procedure, and the liquid resin of the many amount of operation of dripping than this liquid resin to the whole front supply of wafer; And diaphragm formation process; rotary table is rotated with the speed faster than this liquid resin supply step; along with wafer rotates; acting on liquid resinous centrifugal force makes liquid resin expand; thus diaphragm is formed on the whole front of wafer; therefore; water layer is utilized liquid resin to be spread over the entire surface of the wafer and forms thin protective film; then; when to the whole surface supply liquid resin of wafer, can merge with thin protective film and covered with protective film equably over the entire surface of the wafer.In addition, because liquid resin and thin protective film merge well, therefore liquid resinous mobility becomes good, therefore, it is possible to form the diaphragm of uniform thickness with less liquid resin amount on the whole surface of resin molding.
Accompanying drawing explanation
Fig. 1 is equipped with the stereogram that the diaphragm formed according to the present invention covers the laser machine of cleaning device of holding concurrently.
Fig. 2 is that machined object is namely as the stereogram of the semiconductor wafer of wafer.
Fig. 3 is the stereogram illustrated after the diaphragm be arranged in the laser machine shown in Fig. 1 is covered a part of cutting of cleaning device of holding concurrently.
Fig. 4 illustrates that the rotary table diaphragm shown in Fig. 3 being covered cleaning device of holding concurrently is positioned the key diagram of the state of machined object carrying-in/carrying-out position.
Fig. 5 illustrates that the rotary table diaphragm shown in Fig. 3 being covered cleaning device of holding concurrently is positioned the key diagram of the state of job position.
Fig. 6 illustrates that the diaphragm shown in pie graph 3 covers the structured flowchart of the control unit of cleaning device of holding concurrently.
Fig. 7 is that liquid resin in diaphragm covering method of the present invention drips the key diagram of operation.
Fig. 8 is the key diagram of the water layer formation process in diaphragm covering method of the present invention.
Fig. 9 is the key diagram of the liquid resin diffusing procedure in diaphragm covering method of the present invention.
Figure 10 is the key diagram of the liquid resin supply step in diaphragm covering method of the present invention.
Figure 11 is the key diagram of the diaphragm formation process in diaphragm covering method of the present invention.
Figure 12 is the key diagram of the drying process in diaphragm covering method of the present invention.
Figure 13 is the key diagram that the laser machining process using the laser machine shown in Fig. 1 to implement is shown.
Figure 14 is the amplification view of the pith being formed with the semiconductor wafer of laser processing groove by the laser machining process shown in Figure 13.
Label declaration
2: device case;
3: chuck table;
4: laser light irradiation component;
41: laser beam oscillating member;
42: concentrator;
5: imaging member;
6: display member;
7: diaphragm covers cleaning element of holding concurrently;
71: rotary workbench mechanism;
711: rotary table;
712: electro-motor;
72: cleaning fluid receiving member;
74: liquid resin feed mechanism;
740: liquid resin supply member;
741: resin supply nozzle;
75: water supply mechanism;
750: water supply component;
751: water supply nozzle;
76: air feed mechanism;
760: air supply member;
761: air supply nozzle;
10: semiconductor wafer;
11: box;
12: position alignment component;
13: wafer moved member;
14: the 1 wafer transfer components;
15: the 2 wafer transfer components;
F: ring-shaped frame;
T: boundary belt.
Embodiment
Below, for the preferred implementation of diaphragm covering method of the present invention and diaphragm cladding system, be described in detail with reference to accompanying drawing.
In FIG, the stereogram being equipped with the laser machine forming diaphragm cladding system according to the present invention is shown.
Laser machine 1 shown in Fig. 1 possesses roughly rectangular-shaped device case 2.In this device case 2, so that the mode of movement in the processing direction of feed shown in arrow X and the index feed direction Y vertical with this processing direction of feed X the chuck table 3 kept as the wafer of machined object can be equipped with.The absorption chuck 32 that chuck table 3 possesses absorption chuck supporting base 31 and is arranged on this absorption chuck supporting base 31, by not shown aspiration means, using on the surface that remains on this absorption chuck 32 as the wafer of machined object and mounting surface.In addition, chuck table 3 is configured to can be rotated by not shown rotating mechanism.On the absorption chuck supporting base 31 of the chuck table 3 formed like this, be equipped with the binding clasp 34 for fixing aftermentioned ring-shaped frame.Further, laser machine 1 possesses: make above-mentioned chuck table 3 carry out processing the not shown processing feeding component of feeding along processing direction of feed X; The not shown index feed component of index feed is carried out along index feed direction Y with making above-mentioned chuck table 3.
Illustrated laser machine 1 has laser light irradiation component 4, and this laser light irradiation component 4 implements laser processing to the wafer as machined object remaining on above-mentioned chuck table 3.Laser light irradiation component 4 possesses: laser beam oscillating member 41; With concentrator 42, it makes to be vibrated the laser beam optically focused by this laser beam oscillating member 41.In addition, laser machine 1 possesses the not shown mobile member making laser beam oscillating member 41 along the focal point position adjustment direction movement shown in arrow Z, and described focal point position adjustment direction is the direction vertical with the upper surface of chuck table 3 and mounting surface.
Illustrated laser machine 1 possesses imaging member 5, making a video recording in the surface of this imaging member 5 to the machined object remained on the absorption chuck 32 of above-mentioned chuck table 3, detects and the laser beam irradiated from the concentrator 42 of above-mentioned laser light irradiation component 4 will be utilized to carry out the region processed.This imaging member 5, except the common imaging apparatus (CCD: charge coupled device) utilizing visible ray and carry out making a video recording, is also made up of following part: irradiate ultrared infrared illumination component to machined object; Catch the ultrared optical system irradiated by this infrared illumination component; And exporting the imaging apparatus (infrared C CD) etc. of the signal of telecommunication corresponding with the infrared ray captured by this optical system, the signal of the image photographed is delivered to control unit described later by above-mentioned imaging member 5.In addition, illustrated laser machine 1 possesses display member 6, and this display member 6 shows the image photographed by imaging member 5.
Illustrated laser machine 1 has box mounting portion 11a, and this box mounting portion 11a is for loading machined object namely as the box that the semiconductor wafer 10 of wafer is received.At box mounting portion 11a place, be equipped with box workbench 111 in the mode that can be moved up and down by not shown lift component, box 11 is placed on this box workbench 111.Semiconductor wafer 10 is secured on the surface of the boundary belt T being installed on ring-shaped frame F, and is accommodated in above-mentioned box 11 with the state being supported on ring-shaped frame F via boundary belt T.In addition, as shown in Figure 2, many segmentation preset lines 101 by arranging in lattice shape on the front 10a of semiconductor wafer 10 mark off multiple region, in the region that this marks off, be formed with the devices such as IC, LSI 102.About the semiconductor wafer 10 formed like this, as shown in Figure 1, the face being namely formed with segmentation preset lines 101 and device 102 with front 10a is installed on the boundary belt T of ring-shaped frame F for the back side pastes by upside.
Illustrated laser machine 1 has: wafer moved member 13, semiconductor wafer 10 before the processing be accommodated in above-mentioned box 11 takes out of on the position alignment component 12 being disposed in interim placement section 12a by it, and is moved in box 11 by the semiconductor wafer 10 after processing; 1st wafer transfer component 14, semiconductor wafer 10 before the processing taken out of in position alignment members 12 to be transported to diaphragm described later and to cover cleaning device 7 of holding concurrently by it, and will diaphragm utilized to cover hold concurrently the semiconductor wafer 10 of cleaning device 7 diaphragm in surface coverage to be transported on above-mentioned chuck table 3; And the 2nd wafer transfer component 15, it will transport to diaphragm and cover cleaning device 7 of holding concurrently by finished semiconductor wafer 10 on chuck table 3.
Then; cover to diaphragm cleaning device 7 of holding concurrently with reference to Fig. 3 to Fig. 5 to be described; this diaphragm covers surface (machined surface) covered with protective film of cleaning device 7 for machined object before processing and semiconductor wafer 10 of holding concurrently, and the diaphragm removing that will be covered on the surface of the semiconductor wafer after processing 10.
Diaphragm in illustrated execution mode covers cleaning device 7 of holding concurrently to be had rotary workbench mechanism 71 and is adapted to the cleaning fluid receiving member 72 surrounding this rotary workbench mechanism 71.Rotary workbench mechanism 71 possesses: rotary table 711; As the electro-motor 712 of Rotary-drive member, it drives this rotary table 711 to rotate; And supporting member 713, this electro-motor 712 is supported to and can moves in the vertical direction by it.Rotary table 711 possesses the absorption chuck 711a formed by porous material, and this absorption chuck 711a is communicated with not shown aspiration means.Therefore, the wafer as machined object is positioned on absorption chuck 711a by rotary table 711, and utilizes not shown aspiration means that negative pressure is worked, and is remained on by wafer thus on absorption chuck 711a.The upper end of the driving shaft 712a of electro-motor 712 is connected with above-mentioned rotary table 711.Above-mentioned supporting member 713 is made up of multiple (being three in the illustrated embodiment) supporting leg 713a and multiple (being three in the illustrated embodiment) cylinder 713b, described multiple cylinder 713b links with this supporting leg 713a respectively, and is installed on electro-motor 712.About the supporting member 713 formed like this, work by making cylinder 713b, electro-motor 712 and rotary table 711 can be positioned at machined object carrying-in/carrying-out position and job position, above-mentioned machined object carrying-in/carrying-out position is the top position shown in Fig. 4, and above-mentioned job position is the lower position shown in Fig. 5.
Above-mentioned cleaning fluid receiving member 72 possesses: cleaning fluid receiving vessel 721; Support three (two shown in Figure 3) supporting legs 722 of this cleaning fluid receiving vessel 721; And the cap assembly 723 be arranged on the driving shaft 712a of above-mentioned electro-motor 712.As shown in Figure 4 and Figure 5, cleaning fluid receiving vessel 721 is made up of lateral wall 721a, the diapire 721b of cylindrical shape and madial wall 721c.At the central portion of diapire 721b, be provided with the hole 721d supplying the driving shaft 712a of above-mentioned electro-motor 712 to run through insertion, and be formed with the madial wall 721c given prominence to upward from the periphery of this hole 721d.In addition, as shown in Figure 3, diapire 721b is provided with leakage fluid dram 721e, and is connected with excretory duct 724 on this leakage fluid dram 721e.Above-mentioned cap assembly 723 is formed as discoid, and has the cover portion 723a given prominence to from its outer peripheral edges downwards.The cap assembly 723 of formation like this is oriented to: when electro-motor 712 and rotary table 711 are positioned in the job position shown in Fig. 5, and cover portion 723a overlaps with madial wall 721c with a gap in the outer bands of the madial wall 721c forming above-mentioned cleaning fluid receiving vessel 721.
Diaphragm in illustrated execution mode covers cleaning device 7 of holding concurrently and possesses liquid resin feed mechanism 74, and this liquid resin feed mechanism 74 supplies liquid resin to the surface (machined surface) of the machined object before the processing being held in above-mentioned rotary table 711 and semiconductor wafer 10.Liquid resin feed mechanism 74 has: resin supply nozzle 741, and its surface (machined surface) to the semiconductor wafer 10 before the processing being held in rotary table 711 supplies liquid resin; And electro-motor 742, it can rotate and reverse, and this resin supply nozzle 741 is swung, and resin supply nozzle 741 is connected with liquid resin supply member 740 (with reference to Fig. 4 and Fig. 5).Resin supply nozzle 741 is formed by the spray nozzle part 741a flatly extended with from the support 741b that this spray nozzle part 741a extends downwards, support 741b is adapted to not shown the running through that the diapire 721b that runs through and be inserted in and form above-mentioned cleaning fluid receiving vessel 721 is arranged and inserts in the hole, and is connected with liquid resin supply member 740 (with reference to Fig. 4 and Fig. 5).In addition, resin supply nozzle 741 support 741b run through insertion the not shown periphery running through patchhole on be provided with the seal member sealed between through hole and support 741b (not shown).
Diaphragm in illustrated execution mode covers cleaning device 7 of holding concurrently and possesses water supply mechanism 75, and this water supply mechanism 75 is for supplying feedwater to the machined object after the processing be held on above-mentioned rotary table 711 and semiconductor wafer 10.Water supply mechanism 75 has: water supply nozzle 751, and it is to being held in the wafer of rotary table 711 for feedwater; And electro-motor 752, it can rotate and reverse, and for making this water supply nozzle 751 swing, this water supply nozzle 751 is connected with water supply component 750 (with reference to Fig. 4 and Fig. 5).Water supply nozzle 751 is by flatly extending and the spray nozzle part 751a that bends downwards of terminal part and forming from the support 751b that the cardinal extremity of this spray nozzle part 751a extends downwards, support 751b is adapted to not shown the running through that the diapire 721b that runs through and be inserted in and form above-mentioned cleaning fluid receiving vessel 721 is arranged and inserts in the hole, and is connected with water supply component 750 (with reference to Fig. 4 and Fig. 5).In addition, water supply nozzle 751 support 751b run through insertion the not shown peripheral region running through patchhole be provided with the seal member sealed between this through hole and support 751b (not shown).
In addition, diaphragm in illustrated execution mode covers cleaning device 7 of holding concurrently and possesses air feed mechanism 76, and this air feed mechanism 76 is for the machined object after the processing be held on above-mentioned rotary table 711 and semiconductor wafer 10 air supply.Air feed mechanism 76 has: air supply nozzle 761, and it sprays air to the wafer after the cleaning being held in rotary table 711; And electro-motor 762, it can rotate and reverse, and for making this air supply nozzle 761 swing, this air supply nozzle 761 is connected with air supply member 760 (with reference to Fig. 4 and Fig. 5).Air supply nozzle 761 is by flatly extending and the spray nozzle part 761a that bends downwards of terminal part and forming from the support 761b that the cardinal extremity of this spray nozzle part 761a extends downwards, support 761b is adapted to not shown the running through that the diapire 721b that runs through and be inserted in and form above-mentioned cleaning fluid receiving vessel 721 is arranged and inserts in the hole, and is connected with air supply member 760 (with reference to Fig. 4 and Fig. 5).In addition, air supply nozzle 761 support 761b run through the not shown through hole of insertion peripheral region be provided with the seal member sealed between this through hole and support 761b (not shown).
Diaphragm in illustrated execution mode covers cleaning device 7 of holding concurrently and has the control unit 8 shown in Fig. 6.This control unit 8 controls according to the air supply member 760 and electro-motor 762 etc. of control program to the water supply component 750 of the liquid resin supply member 740 of the electro-motor 712 of above-mentioned rotary workbench mechanism 71 and cylinder 713b, liquid resin feed mechanism 74 and electro-motor 742, water supply mechanism 75 and electro-motor 752, air feed mechanism 76.In addition, control unit 8 also can be also used as the control unit of each institution staff making laser machine.
The laser machine 1 being equipped with the above-mentioned double cleaning device 7 of diaphragm covering is formed as described above, is described below to its action.
As shown in Figure 1, the semiconductor wafer 10 (hreinafter referred to as semiconductor wafer 10) before the processing on ring-shaped frame F is accommodated in the regulation of box 11 position in the mode becoming upside as the front 10a of machined surface is bearing in via boundary belt T.By utilizing not shown lift component to make box workbench 111 move up and down, the semiconductor wafer 10 before the processing being accommodated in the position of the regulation of box 11 being positioned at and taking out of position.Then, wafer moved member 13 carries out moving back and forth, takes out of being positioned at the semiconductor wafer 10 taking out of position on the position alignment component 12 being disposed in interim placement section 12a place.Position alignment component 12 is utilized to make to take out of the position to the semiconductor wafer 10 aligning regulation on position alignment component 12.Then; by the revolution action of the 1st wafer transfer component 14 semiconductor wafer 10 before having carried out the processing of position alignment by position alignment component 12 transported and cover on the absorption chuck 711a of the rotary table 711 of cleaning device 7 of holding concurrently to forming diaphragm, and suction is held in this absorption chuck 711a (wafer maintenance operation).Now, rotary table 711 is positioned in the machined object carrying-in/carrying-out position shown in Fig. 4, and resin supply nozzle 741, water supply nozzle 751 and air supply nozzle 761 are positioned in the position of readiness left from the top of rotary table 711 as shown in Figure 3 and Figure 4 like that.
Remain to diaphragm and cover the wafer of holding concurrently on the rotary table 711 of cleaning device 7 and keep after operation implementing the semiconductor wafer 10 before by processing, implement the diaphragm covering process of covered with protective film on the machined surface and front 10a of semiconductor wafer 10.In this diaphragm covering process, first implement liquid resin and to drip operation, drip in operation at this liquid resin, the middle section to the front 10a as machined surface of the semiconductor wafer 10 be held on rotary table 711 drips liquid resin.Namely, control unit 8 makes the cylinder 713b of supporting member 713 work so that rotary table 711 is positioned job position, and makes the electro-motor 742 of liquid resin feed mechanism 74 work to be positioned to as shown in Figure 7 by the spray nozzle part 741a of resin supply nozzle 741 above the machined surface of the semiconductor wafer 10 be held on rotary table 711 and the central portion of front 10a.Then, control unit 8 makes liquid resin supply member 740 work, implement liquid resin to drip operation, drip in operation at this liquid resin, the liquid resin 110 of the ormal weight that drips to the machined surface of the semiconductor wafer 10 be held on rotary table 711 and the middle section of front 10a.When the diameter of the semiconductor wafer 10 as machined object is 200mm, the amount of the liquid resin 110 dripped in this liquid resin drips operation is 2 ~ 3cc.In addition, the liquid resin 110 dripped in liquid resin drips operation is preferably the water miscible resists such as such as PVA (PolyVinylAlcohol: polyvinyl alcohol), PEG (PolyEthyleneGlycol: polyethylene glycol), PEO (PolyEthyleneOxide: polyethylene glycol oxide).
Drip after operation implementing above-mentioned liquid resin, implement water layer formation process, in this water layer formation process, the liquid resinous semiconductor wafer 10 that dripped is supplied water, the whole surface of semiconductor wafer 10 forms water layer in face center region.That is, control unit 8 makes the electro-motor 742 of liquid resin feed mechanism 74 work and the spray nozzle part 741a of resin supply nozzle 741 is positioned position of readiness.Then, control unit 8 makes the electro-motor 752 of water supply mechanism 75 work and be positioned to as illustrated in fig. 8 by the spray nozzle part 751a of water supply nozzle 751 above the central portion of front 10a of the semiconductor wafer 10 be held on rotary table 711.Then, control unit 8 makes water supply component 750 work, and supplies feedwater from the spray nozzle part 751a of water supply nozzle 751.In addition, when the diameter of the semiconductor wafer 10 as machined object is 200mm, the amount of the water supplied in water layer formation process is about 200cc.The water supplied like this is after arrival is provided with the upper surface of the ring-shaped frame F of the boundary belt T having pasted semiconductor wafer 10; water can be full of the region formed by the inner peripheral surface of ring-shaped frame F and boundary belt T, formed thus the machined surface of the semiconductor wafer 10 be maintained on rotary table 711 and front 10a are covered, thickness is the water layer 120 of about 1 ~ 3mm.
After implementing above-mentioned water layer formation process; implement liquid resin diffusing procedure; in this liquid resin diffusing procedure; rotary table 711 is rotated; along with semiconductor wafer 10 rotates; the centrifugal force acting on water layer makes water layer disperse, and makes liquid resin spread thus, and the whole surface of semiconductor wafer 10 forms thinner protective film.Namely; implement such liquid resin diffusing procedure: as shown in (a) of Fig. 9; control unit 8 makes the electro-motor 712 of rotary workbench mechanism 71 work and rotary table 711 is rotated; along with the rotation of semiconductor wafer 10; the centrifugal force acting on water layer 120 makes water layer disperse and liquid resin 110 is expanded; thus, as (b) of Fig. 9, on the whole surface of the front 10a of semiconductor wafer 10, thinner protective film 111 is formed.In this liquid resin diffusing procedure, water layer 120 can be utilized to make liquid resin 110 spread on the whole surface of the front 10a of semiconductor wafer 10 and form thinner protective film 111.In addition, in liquid resin diffusing procedure, control unit 8 makes the electro-motor 712 of rotary workbench mechanism 71 work and make rotary table 711 rotate for 5 seconds along the direction shown in arrow with the rotating speed of such as 2000rpm.
After implementing above-mentioned liquid resin diffusing procedure, implement liquid resin supply step, in this liquid resin supply step, rotary table 711 is rotated with the speed slower than liquid resin diffusing procedure, and the liquid resin of the many amount of operation of dripping than above-mentioned liquid resin to the whole surface supply of semiconductor wafer 10.Namely, control unit 8 makes the electro-motor 712 of rotary workbench mechanism 71 work to make rotary table 711 rotate for 15 seconds with the speed slower than the liquid resin diffusing procedure i.e. rotating speed of such as 45rpm as shown in Figure 10 like this, further, make liquid resin supply member 740 work to drip than above-mentioned liquid resin with the whole surface supply to the machined surface of semiconductor wafer 10 and front 10a that are held in rotary table 711 liquid resin 110 of the many amount of operation.Now, control unit 8 makes the electro-motor 742 of liquid resin feed mechanism 74 work to make the spray nozzle part 741a of resin supply nozzle 741 to swing in required angular range, and moves between peripheral part at the central portion of the semiconductor wafer 10 be held on rotary table 711 as illustrated in fig. 10.The drip amount of the liquid resin 110 supplied in operation of this liquid resin is about 15cc.
After implementing above-mentioned liquid resin supply step; implement diaphragm formation process; in this diaphragm formation process; rotary table 711 is rotated with the speed faster than liquid resin supply step; and; along with the rotation of semiconductor wafer 10, act on liquid resinous centrifugal force and liquid resin is expanded, thus form diaphragm on the whole front 10a of semiconductor wafer 10.That is, control unit 8 makes the electro-motor 712 of rotary workbench mechanism 71 work to make rotary table 711 rotate for 60 seconds with the speed i.e. rotating speed of such as 2000rpm faster than above-mentioned liquid resin supply step as illustrated in fig. 11.Consequently, along with the semiconductor wafer 10 be held on rotary table 711 rotates, the centrifugal force acting on liquid resin 110 makes liquid resin 110 expand, thus forms diaphragm 112 on the whole front 10a of semiconductor wafer 10.In this liquid resin supply step; thinner protective film 111 (with reference to Figure 10) is defined at the front 10a of semiconductor wafer 10 by implementing above-mentioned liquid resin diffusing procedure; therefore; liquid resinous mobility becomes good; therefore, it is possible to form the diaphragm 112 of uniform thickness on the whole surface of resin molding with less liquid resin amount.
Then, implement following such drying process: control unit 8 makes the electro-motor 712 of rotary workbench mechanism 71 work to make rotary table 711 rotate for 120 seconds along the direction shown in arrow with the rotating speed of 500rpm as shown in Figure 12, thus, Rotary drying is carried out.Now; preferably; control unit 8 makes the electro-motor 762 of air feed mechanism 76 work; the spray nozzle part 761a of air supply nozzle 761 is positioned at as illustrated in fig. 12 above the machined surface of the semiconductor wafer 10 be held on rotary table 711 and the central portion of front 10a; while make air supply member 760 work with to diaphragm 112 air supply be covered on the machined surface of semiconductor wafer 10 and front 10a, the spray nozzle part 761a of air supply nozzle 761 is swung in required angular range.
After the diaphragm covering process implementing covered with protective film 112 on the machined surface and front 10a of semiconductor wafer 10 as described above; rotary table 711 is positioned the machined object carrying-in/carrying-out position shown in Fig. 4, and releasing keeps to the suction of the semiconductor wafer 10 be held on rotary table 711.Then, the semiconductor wafer 10 on rotary table 711 is transported on the absorption chuck 32 of chuck table 3 by the 2nd wafer transfer component 15, and is aspirated maintenance by this absorption chuck 32.By not shown processing feeding component, the chuck table 3 that suction remains semiconductor wafer 10 is like this positioned to immediately below the imaging member 5 being disposed in laser light irradiation component 4.
When chuck table 3 is positioned in immediately below imaging member 5, imaging member 5 and not shown control unit is utilized to implement the image procossing such as pattern match, perform the calibration of laser light irradiation position, the image procossing such as described pattern match are the process of the segmentation preset lines 101 for carrying out being formed at along the direction of regulation semiconductor wafer 10 and the position alignment along the concentrator 42 of the laser light irradiation component 4 of segmentation preset lines 101 irradiating laser light.In addition, for the segmentation preset lines 101 extended at a right angle along the direction with afore mentioned rules be formed on semiconductor wafer 10, perform the calibration of laser light irradiation position similarly.Now, although be formed with diaphragm 112 on the front 10a being formed with segmentation preset lines 101 of semiconductor wafer 10, in the opaque situation of diaphragm 112, infrared ray can be utilized to carry out shooting and to calibrate from surface.
Detecting the segmentation preset lines 101 that formed on the semiconductor wafer 10 being held in chuck table 3 as described above and after having carried out the calibration of laser light irradiation position, the laser light irradiation region that the concentrator 42 as shown in the figure chuck table 3 being moved to the laser light irradiation component 4 of irradiating laser light is positioned at, is positioned at the segmentation preset lines 101 of regulation immediately below concentrator 42.Now, as shown in (a) of Figure 13, semiconductor wafer 10 is positioned to one end of segmentation preset lines 101 (being left end in (a) of Figure 13) is positioned at immediately below concentrator 42.Then, from the concentrator 42 irradiated with pulse laser light of laser light irradiation component 4, make chuck table 3 move with the processing feed speed of regulation with the direction shown in arrow X1 in (a) at Figure 13 simultaneously.Then, as shown in (b) of Figure 13, when the other end (being right-hand member in (b) of Figure 13) of segmentation preset lines 101 arrives immediately below concentrator 42 behind position, stop irradiated with pulse laser light, and it is mobile that chuck table 3 i.e. semiconductor wafer 10 is stopped.In this laser processing groove formation process, the focal point P of pulse laser light is aimed at the near surface of segmentation preset lines 101.
By implementing above-mentioned laser light irradiation operation, as shown in figure 14, laser processing groove 140 is formed at segmentation preset lines 101 place of semiconductor wafer 10.Now, as shown in figure 14, even if create chip 150 due to irradiating laser light, this chip 150 also can intercept and can not be attached on device 102 and pad etc. by protected film 112.In this laser light irradiation operation, because the diaphragm 112 be formed on the machined surface of semiconductor wafer 10 and front 10a is uniform as mentioned above, therefore, it is possible to form stable laser processing groove 140.Further, above-mentioned laser light irradiation operation is implemented to all segmentation preset lines 101 of semiconductor wafer 10.
In addition, above-mentioned laser light irradiation operation is such as carried out under following processing conditions.
The light source of laser beam: YVO4 laser or YAG laser
Wavelength: 355nm
Repetition rate: 50kHz
Export: 4W
Spot diameter: 9.2 μm
Processing feed speed: 200mm/ second
After implementing above-mentioned laser light irradiation operation along all segmentation preset lines 101 of semiconductor wafer 10, the position making the chuck table 3 that remain semiconductor wafer 10 be back to initial suction to keep semiconductor wafer 10, and remove herein the suction of semiconductor wafer 10 is kept.Then, utilize the 2nd wafer transfer component 15 to be transported by semiconductor wafer 10 and cover on the absorption chuck 711a of the rotary table 711 of cleaning device 7 of holding concurrently to forming diaphragm, and suction is held in this absorption chuck 711a.Now, as shown in Figure 3 and Figure 4, resin supply nozzle 741, air nozzle 751 and remover liquid nozzle 761 are positioned in the position of readiness left from the top of rotary table 711.
After on the rotary table 711 semiconductor wafer 10 after processing being remained on the double cleaning device 7 of diaphragm covering, perform matting.That is, rotary table 711 is positioned at job position, and the electro-motor 752 of water supply mechanism 75 is worked, above the central part spray nozzle part 751a of water supply nozzle 751 being positioned to the semiconductor wafer 10 be held on rotary table 711.Then, rotary table 711 is rotated with the rotating speed of such as 800rpm, makes water supply component 750 work and spray water from spray nozzle part 751a simultaneously.In addition, spray nozzle part 751a is made up of so-called two-fluid spray nozzle, its supply pressure is the water of about 0.2MPa, and supply the air that pressure is approximately 0.3 ~ 0.5MPa, like this, water sprays by means of the pressure of air, and effectively can clean the machined surface of semiconductor wafer 10 and front 10a.Now, electro-motor 752 is worked, make the water that sprays from the spray nozzle part 751a of water supply nozzle 751 from be sprayed onto the semiconductor wafer 10 being held in rotary table 711 center position to be sprayed onto this semiconductor wafer 10 peripheral part position, swing in required angular range.Its result is, because the diaphragm 112 covered on the front 10a of semiconductor wafer 10 is formed by water-soluble resin as mentioned above, so easily can wash out diaphragm, and the chip 150 produced when laser processing also can be removed.
After above-mentioned matting terminates, perform drying process.That is, water supply nozzle 751 is positioned at position of readiness, and makes rotary table 711 rotate about 15 seconds with the rotating speed of such as 3000rpm.Now, preferably, the electro-motor 762 of air feed mechanism 76 is worked, the spray nozzle part 761a of air supply nozzle 761 is positioned to above the machined surface of the semiconductor wafer 10 be held on rotary table 711 and the central portion of front 10a, while make air supply member 760 work with to the machined surface of semiconductor wafer 10 and front 10a air supply, the spray nozzle part 761a of air supply nozzle 761 is swung in required angular range.
After the cleaning completing the semiconductor wafer 10 after to processing as described above and drying, rotary table 711 is stopped the rotation, and the air supply nozzle 761 of air feed mechanism 76 is positioned at position of readiness.Then, rotary table 711 is positioned at the machined object carrying-in/carrying-out position shown in Fig. 4, and releasing keeps to the suction of the semiconductor wafer 10 remained on rotary table 711.Then, on the position alignment component 12 utilizing the 1st wafer transfer component 14 to be taken out of by the semiconductor wafer 10 after the processing on rotary table 711 to be disposed in interim placement section 12a.Utilize wafer moved member 13 that the semiconductor wafer 10 after the processing taken out of in position alignment members 12 is received into the assigned position place of box 11.
Above, describe the present invention based on illustrated execution mode, but the present invention is not limited in execution mode, various distortion can be carried out in the scope of purport of the present invention.Such as, in the above-described embodiment, show the example be disposed in by diaphragm cladding system on laser machine, but also diaphragm cladding system can be formed as independently device.
Claims (2)
1. a diaphragm covering method, it is the method covering liquid resin and form diaphragm on the front of the wafer of pending laser processing, it is characterized in that,
This diaphragm covering method comprises:
Wafer keeps operation, remains on rotary table by the mode that wafer becomes upside with the front of this wafer;
Liquid resin drips operation, liquid resin is dripped to the middle section place, front of the wafer be maintained on rotary table;
Water layer formation process, for the liquid resinous wafer that dripped at front middle section for feedwater, the whole front of wafer forms water layer;
Liquid resin diffusing procedure, makes rotary table rotate, and along with the rotation of wafer, the centrifugal force acting on water layer makes water layer disperse, and makes liquid resin spread and on the whole front of wafer, form thin protective film thus;
Liquid resin supply step, makes rotary table rotate with the speed slower than this liquid resin diffusing procedure, and the liquid resin of the many amount of operation of dripping than this liquid resin to the whole front supply of wafer; And
Diaphragm formation process, makes rotary table rotate with the speed faster than this liquid resin supply step, along with wafer rotates, acts on liquid resinous centrifugal force and liquid resin is expanded, thus form diaphragm on the whole front of wafer.
2. a diaphragm cladding system, it is the device covering liquid resin on the front side of the wafer and form diaphragm, it is characterized in that,
Described diaphragm cladding system possesses:
Rotary table, it keeps this wafer being pasted onto by wafer under the state on boundary belt, and described boundary belt is arranged on ring-shaped frame;
Rotary-drive member, it drives this rotary table to rotate;
Water supply mechanism, it is to the wafer that is pasted onto on boundary belt for feedwater, and described boundary belt is arranged on the ring-shaped frame that this rotary table keeps;
Liquid resin feed mechanism, it is to the wafer supply liquid resin be pasted onto on boundary belt, and described boundary belt is arranged on the ring-shaped frame that this rotary table keeps; And
Control unit, it controls this Rotary-drive member, this water supply mechanism and this liquid resin feed mechanism,
This control unit performs following operation:
Liquid resin drips operation, makes this liquid resin feed mechanism work and liquid resin is dripped to the middle section place, front of the wafer be maintained on this rotary table;
Water layer formation process, drips after operation implementing this liquid resin, makes this water supply mechanism work, for the liquid resinous wafer that dripped at front middle section for feedwater, the whole front of wafer forms water layer;
Liquid resin diffusing procedure, after implementing this water layer formation process, make this Rotary-drive member work and rotary table is rotated, along with the rotation of wafer, the centrifugal force acting on water layer makes water layer disperse, and makes liquid resin spread and on the whole front of wafer, form thin protective film thus;
Liquid resin supply step, after implementing this liquid resin diffusing procedure, make this Rotary-drive member work and rotary table is rotated with the speed slower than this liquid resin diffusing procedure, and making this liquid resin feed mechanism work and the liquid resin of the many amount of operation of dripping than this liquid resin to the whole front supply of wafer; And
Diaphragm formation process; after implementing this liquid resin supply step; make this Rotary-drive member work and rotary table is rotated with the speed faster than this liquid resin supply step; along with the rotation of wafer; acting on liquid resinous centrifugal force makes liquid resin expand, thus forms diaphragm on the whole front of wafer.
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| JP2014168175A JP6328522B2 (en) | 2014-08-21 | 2014-08-21 | Protective film coating method and protective film coating apparatus |
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| CN108538733A (en) * | 2017-03-02 | 2018-09-14 | 韩国科泰高科株式会社 | Sensor package coating unit and the sensor package manufactured using it |
| CN111246947A (en) * | 2018-08-22 | 2020-06-05 | 株式会社欧利生 | Method for producing object coated with coating substance |
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| JP6767814B2 (en) * | 2016-09-05 | 2020-10-14 | 株式会社ディスコ | Manufacturing method of packaged device chip |
| JP6899265B2 (en) * | 2017-06-27 | 2021-07-07 | 東京エレクトロン株式会社 | Coating treatment method, coating treatment equipment and storage medium |
| CN114351960B (en) * | 2021-12-20 | 2023-09-22 | 广东博智林机器人有限公司 | Construction method and wall construction system |
| KR20230100185A (en) * | 2021-12-28 | 2023-07-05 | 세메스 주식회사 | Irradiating module, and apparatus for treating substrate with the same |
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| CN105390405B (en) | 2019-06-14 |
| JP2016043293A (en) | 2016-04-04 |
| TW201622019A (en) | 2016-06-16 |
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