WO2021095193A1 - Module de capteur d'image et procédé de fabrication de module de capteur d'image - Google Patents

Module de capteur d'image et procédé de fabrication de module de capteur d'image Download PDF

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Publication number
WO2021095193A1
WO2021095193A1 PCT/JP2019/044651 JP2019044651W WO2021095193A1 WO 2021095193 A1 WO2021095193 A1 WO 2021095193A1 JP 2019044651 W JP2019044651 W JP 2019044651W WO 2021095193 A1 WO2021095193 A1 WO 2021095193A1
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WO
WIPO (PCT)
Prior art keywords
image sensor
sensor chip
cover glass
bonding
sensor module
Prior art date
Application number
PCT/JP2019/044651
Other languages
English (en)
Japanese (ja)
Inventor
中村　博文
高橋　康
Original Assignee
株式会社ティエーブル
アウラディアス合同会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 株式会社ティエーブル, アウラディアス合同会社 filed Critical 株式会社ティエーブル
Priority to PCT/JP2019/044651 priority Critical patent/WO2021095193A1/fr
Priority to CN201980102115.2A priority patent/CN114651324B/zh
Priority to JP2020559579A priority patent/JP6889452B1/ja
Publication of WO2021095193A1 publication Critical patent/WO2021095193A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures

Definitions

  • the present invention relates to an improvement of an image sensor module and a method for manufacturing the same.
  • Patent Documents 1 to 4 there are those shown in Patent Documents 1 to 4 as those provided with a cover glass arranged with a gap in front of the image sensor of the image sensor chip.
  • the main problem to be solved by the present invention is that the gap between the image sensor chip and the cover glass in this type of image sensor module is rational and appropriate without giving the image sensor module a special structure for that purpose. It is in the point that it can be formed in.
  • the image sensor module is provided with a cover glass arranged in a gap in front of the sensor region in the image sensor chip. It ’s a sensor module.
  • the gap is configured to be configured by a portion of wire bonding bonding wires that are electrically connected to the electrodes of the image sensor chip.
  • a part of the bonding wire is used as a ball bonding portion in the wire bonding.
  • a part of the bonding wire is used as a second bonding portion in the wire bonding.
  • one aspect of the present invention is to cover at least a part of the bonding wire with an adhesive resin for the cover glass filled between the imaging chip and the cover glass. .. Alternatively, it is one of the aspects of the present invention that the entire gap is filled with the adhesive resin for the cover glass.
  • a method of manufacturing an image sensor module, a plurality of image sensor chips, and an interval between adjacent image sensor chips are provided.
  • the first step of opening and die bonding on the substrate The second step of electrically connecting the electrodes of the image sensor chip arranged on the substrate and the substrate by the bonding wire of wire bonding in the first step.
  • the gap between the image sensor chip and the cover glass in this type of image sensor module can be reasonably and appropriately formed without giving the image sensor module a special structure for that purpose. ..
  • FIG. 1 is a front view of an image sensor module (first example) according to an embodiment of the present invention.
  • FIG. 2 is a cross-sectional configuration diagram of the first example.
  • FIG. 3 is a cross-sectional configuration diagram of an image sensor module (second example) according to an embodiment of the present invention.
  • FIG. 4 is a cross-sectional configuration diagram of an image sensor module (third example) according to an embodiment of the present invention.
  • FIG. 5 is a cross-sectional configuration diagram of an image sensor module (fourth example) according to an embodiment of the present invention.
  • FIG. 6 is a configuration diagram showing the contents of each step constituting the manufacturing method for manufacturing the first example so as to be easy to understand.
  • FIG. 7 is a cross-sectional configuration diagram showing a state immediately after the cover glass is placed on the image sensor chip arranged on the substrate in the manufacturing method.
  • FIG. 8 is an enlarged view of part A in FIG. 7, and
  • FIG. 8 (b) is a cross-sectional view taken along the line BB in FIG. 8 (a).
  • FIG. 9 shows the cover glass from the state where the cover glass is placed on the image sensor chip arranged on the substrate in the manufacturing method until a part of the bonding wire is sandwiched between the cover glass and the image sensor chip.
  • 9 (b) is a cross-sectional view taken along the line CC in FIG. 9 (a).
  • FIGS. 1 to 9 a typical embodiment of the present invention will be described with reference to FIGS. 1 to 9.
  • the image sensor module 1 is incorporated in various devices and devices to add an imaging function to these devices and devices. Specifically, the image sensor module 1 converts an image formed by an objective lens provided in these devices or the like into an electric signal by an image sensor chip 2 (imaging element) constituting the image sensor module 1. An image pickup function is added to these devices and the like.
  • the image sensor module 1 according to this embodiment has a structure suitable for being used in an in-vehicle camera, a smartphone, a portable electronic terminal, etc., which are often subjected to vibration or shock.
  • the outline of the image sensor module 1 is shown in FIGS. 1 and 2.
  • the image sensor chip 2 having a quadrangular plate shape smaller than the substrate 3 is in contact with the upper surface 3a of the substrate 3 so that the lower surface 2a of the image sensor chip 2 is in contact with the upper surface 3a of the quadrangular plate-shaped substrate 3. It is arranged as.
  • a sensor region 2c (light receiving portion) is formed in the center of the upper surface 2b of the image sensor chip 2.
  • a quadrangular plate-shaped cover glass 4 having substantially the same size as the image sensor chip 2 is provided, and one surface of the cover glass 4 (hereinafter, this) is placed on the upper surface 2b of the image sensor chip 2.
  • One side of the cover glass 4 is referred to as an inner surface 4a) so as to face each other.
  • the cover glass 4 is arranged on the image sensor chip 2 so that each side thereof is aligned with each corresponding side of the image sensor chip 2.
  • the image sensor chip 2 and the substrate 3 are electrically connected by a bonding wire 5 generated by wire bonding. Specifically, of the plurality of electrodes 2d (bonding pads) formed outside the sensor region of the image sensor chip 2 and the plurality of electrodes 3b formed outside the image sensor chip 2 on the substrate 3. , Corresponding ones are connected to each other by the bonding wire 5.
  • Reference numeral 3c in FIG. 2 is a bump formed on a terminal of wiring (not shown) penetrating the inside of the substrate 3, and the electric signal obtained from the image sensor chip 2 electrically connected to the substrate 3 as described above is It is designed to be output from this bump 3c.
  • the cover glass 4 is fixed to the image sensor chip 2 by the adhesive resin 6.
  • the portion of the upper surface 3a of the substrate 3 other than the location where the image sensor chip 2 and the cover glass 4 are arranged is covered with the sealing resin 7.
  • a gap 8 is formed between the inner surface 4a of the cover glass 4 and the sensor region 2c of the image sensor chip 2.
  • the gap 8 is formed by a part 5a of a bonding wire 5 of wire bonding that is electrically connected to the electrode 2d of the image sensor chip 2.
  • the cover glass 4 sandwiches a part 5a of the bonding wire 5 between the inner surface 4a of the cover glass 4 and the electrode 2d of the image sensor chip 2, and the adhesive resin 6 is attached to the image sensor chip 2. Is fixed by.
  • the gap 8 can be appropriately formed without preparing a special structure for forming the gap 8 between the image sensor chip 2 and the cover glass 4 in the image sensor module 1. It is possible to configure the provided image sensor module 1.
  • the wire diameter of the bonding wire 5 is determined in consideration of the size of the electrode 2d of the image sensor chip 2, the size of the electrode of the substrate 3, the required gap amount of the gap 8, and the like.
  • the ball bond portion 5c described later is provided by the bonding wire 5 having a wire diameter of 15 to 20 ⁇ m. Is formed so as to form a gap 8 having a gap amount of 50 ⁇ m.
  • the electrode 2d of the image sensor chip 2 is a quadrangle having a side of 80 ⁇ m and the gap amount of the gap 8 is required to be 30 ⁇ m
  • the second bond portion 5b described later of the bonding wire 5 having a wire diameter of 30 ⁇ m is required.
  • a gap 8 having a gap amount of 30 ⁇ m is formed.
  • a part 5a of the bonding wire 5 is used as a second bond portion 5b (also referred to as a wedge bond) in the wire bonding.
  • a second bond portion 5b also referred to as a wedge bond
  • the image sensor module 1 it is possible to easily and appropriately provide the image sensor module 1 in which the gap 8 is substantially equal to the wire diameter of the bonding wire 5 constituting the second bond portion 5b.
  • a part 5a of the bonding wire 5 is a ball bond part 5c (also referred to as a first bond) in the wire bonding.
  • the image sensor module 1 it is possible to easily and appropriately provide the image sensor module 1 in which the gap 8 is substantially equal to the height of the ball-shaped protrusion of the ball bond portion 5c.
  • the adhesive resin 6 exists on the entire upper surface 2b of the image sensor chip 2 including the sensor region 2c of the image sensor chip 2, and the electrode on the bonding wire 5
  • the inner surface 4a of the cover glass 4 and the image sensor chip 2 are integrated over the entire upper surface 2b of the image sensor chip 2 in a state of covering a part 5a connected to 2d.
  • a solid gap 8 can be formed in front of the sensor region of the image sensor chip 2.
  • the adhesive resin 6 has a refractive index of light of 1.5.
  • the adhesive resin is in a state where the part 5a as a portion electrically connected to the image sensor chip 2 is mechanically sandwiched between the cover glass 4 and the image sensor chip 2. 6 allows the cover glass 4, the part 5a of the bonding wire 5, and the image sensor chip 2 to be firmly integrated.
  • the image sensor module 1 can be made extremely suitable for use in an in-vehicle camera, a smartphone, or the like, which is often subjected to vibration or shock.
  • the adhesive resin 6 is made to exist only outside the sensor region 2c of the image sensor chip 2 and is connected to the electrode in the bonding wire 5.
  • the inner surface 4a of the cover glass 4 and the image sensor chip 2 are integrated while covering the portion 5a.
  • a hollow gap 8 can be formed in front of the sensor region 2c of the image sensor chip 2.
  • the image sensor chip 2 described above can be easily and appropriately manufactured by a manufacturing method including the following first to fifth steps.
  • a plurality of image sensor chips 2 are die-bonded onto the substrate 3 with a gap between the plurality of image sensor chips 2 and the adjacent image sensor chips 2 (FIG. 6A).
  • a plurality of image sensor chips 2 are spaced apart from the image sensor chips 2 adjacent to each other in the X-axis direction x (see FIG. 6A) of the substrate 3.
  • Die bonding is performed so as to form an X-axis direction column 2e composed of the above, and an interval is provided between the X-axis direction column 2e adjacent to the Y-axis direction (not shown) orthogonal to the X-axis.
  • Die bonding is performed so as to open and form a plurality of X-axis direction rows 2e.
  • the bonding wire 5 is formed on the image sensor chip 2 so that a part 5a on the electrode 2d of the image sensor chip 2 is covered with at least the bonding resin 6.
  • the resin 6 is adhered (FIG. 6 (c)).
  • the adhesive resin 6 is dropped on each image sensor chip 2 so as to cover the entire upper surface 2b of each image sensor chip 2 and the upper side of the end surface in the thickness direction. That is, FIG. 6 shows a process of manufacturing the first example.
  • the cover glass 4 is placed on the image sensor chip 2 via the adhesive resin 6 applied in the third step (FIG. 6 (d)).
  • the cover glass 4 uses a cover glass 4 whose upper surface is coated with a peelable film 4b.
  • a gap 8 having a thickness of a part 5a of the bonding wire 5 is formed between the inner surface 4a of the cover glass 4 mounted in the fourth step and the upper surface 2b of the image sensor chip 2.
  • the cover glass 4 is pressed until the cover glass 4 is in a state of being pressed. Before the start of pressing, the gap 8 between the cover glass 4 and the image sensor chip 2 is not determined.
  • the cover glass 4 is floated on the image sensor chip 2 by the adhesive resin 6 (FIGS. 7 and 8).
  • the pressing is terminated when a state in which a part 5a of the bonding wire 5 is sandwiched between the cover glass 4 and the image sensor chip 2 is created (FIG. 9).
  • the gap 8 between the cover glass 4 and the image sensor chip 2 is controlled by the dimensions of a part 5a of the bonding wire 5.
  • the sealing resin 7 that covers a portion other than the upper surface of the cover glass 4 covered with the film on the upper surface 3a of the substrate 3 is molded (FIG. 6 (e)).
  • the substrate 3 is diced to generate a plurality of image sensor modules 1 based on the single substrate 3 (FIG. 6 (f)). Further, after this dicing or before this dicing, the film 4b is peeled off (FIG. 6 (g)).
  • the present invention is not limited to the embodiments described above, but includes all embodiments that can achieve the object of the present invention.
  • Image sensor module 2 Image sensor chip 2a Lower surface 2b Upper surface 2c Sensor area 2d Electrode 2e X direction row 3 Substrate 3a Upper surface 3b Electrode 3c Bump 4 Cover glass 4a Inner surface 4b Film 5 Bonding wire 5a Part 5b Second bond part 5c Ball bond part 6 Adhesive resin 7 Encapsulating resin 8 Gap

Abstract

Ce module de capteur d'image est obtenu en fournissant un verre de couverture disposé en formant un espace devant une région de capteur dans une puce de capteur d'image, l'espace étant conçu par une partie d'un fil de liaison de liaison de fil électriquement connecté à une électrode de la puce de capteur d'image.
PCT/JP2019/044651 2019-11-14 2019-11-14 Module de capteur d'image et procédé de fabrication de module de capteur d'image WO2021095193A1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
PCT/JP2019/044651 WO2021095193A1 (fr) 2019-11-14 2019-11-14 Module de capteur d'image et procédé de fabrication de module de capteur d'image
CN201980102115.2A CN114651324B (zh) 2019-11-14 2019-11-14 图像传感器模块以及图像传感器模块的制造方法
JP2020559579A JP6889452B1 (ja) 2019-11-14 2019-11-14 イメージセンサモジュール、及び、イメージセンサモジュールの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2019/044651 WO2021095193A1 (fr) 2019-11-14 2019-11-14 Module de capteur d'image et procédé de fabrication de module de capteur d'image

Publications (1)

Publication Number Publication Date
WO2021095193A1 true WO2021095193A1 (fr) 2021-05-20

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PCT/JP2019/044651 WO2021095193A1 (fr) 2019-11-14 2019-11-14 Module de capteur d'image et procédé de fabrication de module de capteur d'image

Country Status (3)

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JP (1) JP6889452B1 (fr)
CN (1) CN114651324B (fr)
WO (1) WO2021095193A1 (fr)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006332680A (ja) * 2005-05-27 2006-12-07 Avago Technologies General Ip (Singapore) Private Ltd イメージセンサをパッケージングするための方法及びパッケージングされたイメージセンサ
WO2008032404A1 (fr) * 2006-09-15 2008-03-20 Fujitsu Microelectronics Limited Dispositif à semi-conducteur et son procédé de fabrication
US8072083B1 (en) * 2006-02-17 2011-12-06 Amkor Technology, Inc. Stacked electronic component package having film-on-wire spacer
JP2014075480A (ja) * 2012-10-04 2014-04-24 Seiko Instruments Inc 光学デバイス及び光学デバイスの製造方法
WO2018030140A1 (fr) * 2016-08-08 2018-02-15 ソニーセミコンダクタソリューションズ株式会社 Élément d'imagerie, procédé de production et dispositif électronique

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9576177B2 (en) * 2014-12-11 2017-02-21 Fingerprint Cards Ab Fingerprint sensing device
TWI642150B (zh) * 2017-08-15 2018-11-21 勝麗國際股份有限公司 堆疊式感測器封裝結構

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006332680A (ja) * 2005-05-27 2006-12-07 Avago Technologies General Ip (Singapore) Private Ltd イメージセンサをパッケージングするための方法及びパッケージングされたイメージセンサ
US8072083B1 (en) * 2006-02-17 2011-12-06 Amkor Technology, Inc. Stacked electronic component package having film-on-wire spacer
WO2008032404A1 (fr) * 2006-09-15 2008-03-20 Fujitsu Microelectronics Limited Dispositif à semi-conducteur et son procédé de fabrication
JP2014075480A (ja) * 2012-10-04 2014-04-24 Seiko Instruments Inc 光学デバイス及び光学デバイスの製造方法
WO2018030140A1 (fr) * 2016-08-08 2018-02-15 ソニーセミコンダクタソリューションズ株式会社 Élément d'imagerie, procédé de production et dispositif électronique

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Publication number Publication date
CN114651324A (zh) 2022-06-21
JPWO2021095193A1 (ja) 2021-11-25
CN114651324B (zh) 2024-05-07
JP6889452B1 (ja) 2021-06-18

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