WO2021095193A1 - Image sensor module and method for manufacturing image sensor module - Google Patents

Image sensor module and method for manufacturing image sensor module Download PDF

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Publication number
WO2021095193A1
WO2021095193A1 PCT/JP2019/044651 JP2019044651W WO2021095193A1 WO 2021095193 A1 WO2021095193 A1 WO 2021095193A1 JP 2019044651 W JP2019044651 W JP 2019044651W WO 2021095193 A1 WO2021095193 A1 WO 2021095193A1
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image sensor
sensor chip
cover glass
bonding
sensor module
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PCT/JP2019/044651
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French (fr)
Japanese (ja)
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中村　博文
高橋　康
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株式会社ティエーブル
アウラディアス合同会社
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Priority to JP2020559579A priority Critical patent/JP6889452B1/en
Priority to CN201980102115.2A priority patent/CN114651324A/en
Priority to PCT/JP2019/044651 priority patent/WO2021095193A1/en
Publication of WO2021095193A1 publication Critical patent/WO2021095193A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures

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  • the present invention relates to an improvement of an image sensor module and a method for manufacturing the same.
  • Patent Documents 1 to 4 there are those shown in Patent Documents 1 to 4 as those provided with a cover glass arranged with a gap in front of the image sensor of the image sensor chip.
  • the main problem to be solved by the present invention is that the gap between the image sensor chip and the cover glass in this type of image sensor module is rational and appropriate without giving the image sensor module a special structure for that purpose. It is in the point that it can be formed in.
  • the image sensor module is provided with a cover glass arranged in a gap in front of the sensor region in the image sensor chip. It ’s a sensor module.
  • the gap is configured to be configured by a portion of wire bonding bonding wires that are electrically connected to the electrodes of the image sensor chip.
  • a part of the bonding wire is used as a ball bonding portion in the wire bonding.
  • a part of the bonding wire is used as a second bonding portion in the wire bonding.
  • one aspect of the present invention is to cover at least a part of the bonding wire with an adhesive resin for the cover glass filled between the imaging chip and the cover glass. .. Alternatively, it is one of the aspects of the present invention that the entire gap is filled with the adhesive resin for the cover glass.
  • a method of manufacturing an image sensor module, a plurality of image sensor chips, and an interval between adjacent image sensor chips are provided.
  • the first step of opening and die bonding on the substrate The second step of electrically connecting the electrodes of the image sensor chip arranged on the substrate and the substrate by the bonding wire of wire bonding in the first step.
  • the gap between the image sensor chip and the cover glass in this type of image sensor module can be reasonably and appropriately formed without giving the image sensor module a special structure for that purpose. ..
  • FIG. 1 is a front view of an image sensor module (first example) according to an embodiment of the present invention.
  • FIG. 2 is a cross-sectional configuration diagram of the first example.
  • FIG. 3 is a cross-sectional configuration diagram of an image sensor module (second example) according to an embodiment of the present invention.
  • FIG. 4 is a cross-sectional configuration diagram of an image sensor module (third example) according to an embodiment of the present invention.
  • FIG. 5 is a cross-sectional configuration diagram of an image sensor module (fourth example) according to an embodiment of the present invention.
  • FIG. 6 is a configuration diagram showing the contents of each step constituting the manufacturing method for manufacturing the first example so as to be easy to understand.
  • FIG. 7 is a cross-sectional configuration diagram showing a state immediately after the cover glass is placed on the image sensor chip arranged on the substrate in the manufacturing method.
  • FIG. 8 is an enlarged view of part A in FIG. 7, and
  • FIG. 8 (b) is a cross-sectional view taken along the line BB in FIG. 8 (a).
  • FIG. 9 shows the cover glass from the state where the cover glass is placed on the image sensor chip arranged on the substrate in the manufacturing method until a part of the bonding wire is sandwiched between the cover glass and the image sensor chip.
  • 9 (b) is a cross-sectional view taken along the line CC in FIG. 9 (a).
  • FIGS. 1 to 9 a typical embodiment of the present invention will be described with reference to FIGS. 1 to 9.
  • the image sensor module 1 is incorporated in various devices and devices to add an imaging function to these devices and devices. Specifically, the image sensor module 1 converts an image formed by an objective lens provided in these devices or the like into an electric signal by an image sensor chip 2 (imaging element) constituting the image sensor module 1. An image pickup function is added to these devices and the like.
  • the image sensor module 1 according to this embodiment has a structure suitable for being used in an in-vehicle camera, a smartphone, a portable electronic terminal, etc., which are often subjected to vibration or shock.
  • the outline of the image sensor module 1 is shown in FIGS. 1 and 2.
  • the image sensor chip 2 having a quadrangular plate shape smaller than the substrate 3 is in contact with the upper surface 3a of the substrate 3 so that the lower surface 2a of the image sensor chip 2 is in contact with the upper surface 3a of the quadrangular plate-shaped substrate 3. It is arranged as.
  • a sensor region 2c (light receiving portion) is formed in the center of the upper surface 2b of the image sensor chip 2.
  • a quadrangular plate-shaped cover glass 4 having substantially the same size as the image sensor chip 2 is provided, and one surface of the cover glass 4 (hereinafter, this) is placed on the upper surface 2b of the image sensor chip 2.
  • One side of the cover glass 4 is referred to as an inner surface 4a) so as to face each other.
  • the cover glass 4 is arranged on the image sensor chip 2 so that each side thereof is aligned with each corresponding side of the image sensor chip 2.
  • the image sensor chip 2 and the substrate 3 are electrically connected by a bonding wire 5 generated by wire bonding. Specifically, of the plurality of electrodes 2d (bonding pads) formed outside the sensor region of the image sensor chip 2 and the plurality of electrodes 3b formed outside the image sensor chip 2 on the substrate 3. , Corresponding ones are connected to each other by the bonding wire 5.
  • Reference numeral 3c in FIG. 2 is a bump formed on a terminal of wiring (not shown) penetrating the inside of the substrate 3, and the electric signal obtained from the image sensor chip 2 electrically connected to the substrate 3 as described above is It is designed to be output from this bump 3c.
  • the cover glass 4 is fixed to the image sensor chip 2 by the adhesive resin 6.
  • the portion of the upper surface 3a of the substrate 3 other than the location where the image sensor chip 2 and the cover glass 4 are arranged is covered with the sealing resin 7.
  • a gap 8 is formed between the inner surface 4a of the cover glass 4 and the sensor region 2c of the image sensor chip 2.
  • the gap 8 is formed by a part 5a of a bonding wire 5 of wire bonding that is electrically connected to the electrode 2d of the image sensor chip 2.
  • the cover glass 4 sandwiches a part 5a of the bonding wire 5 between the inner surface 4a of the cover glass 4 and the electrode 2d of the image sensor chip 2, and the adhesive resin 6 is attached to the image sensor chip 2. Is fixed by.
  • the gap 8 can be appropriately formed without preparing a special structure for forming the gap 8 between the image sensor chip 2 and the cover glass 4 in the image sensor module 1. It is possible to configure the provided image sensor module 1.
  • the wire diameter of the bonding wire 5 is determined in consideration of the size of the electrode 2d of the image sensor chip 2, the size of the electrode of the substrate 3, the required gap amount of the gap 8, and the like.
  • the ball bond portion 5c described later is provided by the bonding wire 5 having a wire diameter of 15 to 20 ⁇ m. Is formed so as to form a gap 8 having a gap amount of 50 ⁇ m.
  • the electrode 2d of the image sensor chip 2 is a quadrangle having a side of 80 ⁇ m and the gap amount of the gap 8 is required to be 30 ⁇ m
  • the second bond portion 5b described later of the bonding wire 5 having a wire diameter of 30 ⁇ m is required.
  • a gap 8 having a gap amount of 30 ⁇ m is formed.
  • a part 5a of the bonding wire 5 is used as a second bond portion 5b (also referred to as a wedge bond) in the wire bonding.
  • a second bond portion 5b also referred to as a wedge bond
  • the image sensor module 1 it is possible to easily and appropriately provide the image sensor module 1 in which the gap 8 is substantially equal to the wire diameter of the bonding wire 5 constituting the second bond portion 5b.
  • a part 5a of the bonding wire 5 is a ball bond part 5c (also referred to as a first bond) in the wire bonding.
  • the image sensor module 1 it is possible to easily and appropriately provide the image sensor module 1 in which the gap 8 is substantially equal to the height of the ball-shaped protrusion of the ball bond portion 5c.
  • the adhesive resin 6 exists on the entire upper surface 2b of the image sensor chip 2 including the sensor region 2c of the image sensor chip 2, and the electrode on the bonding wire 5
  • the inner surface 4a of the cover glass 4 and the image sensor chip 2 are integrated over the entire upper surface 2b of the image sensor chip 2 in a state of covering a part 5a connected to 2d.
  • a solid gap 8 can be formed in front of the sensor region of the image sensor chip 2.
  • the adhesive resin 6 has a refractive index of light of 1.5.
  • the adhesive resin is in a state where the part 5a as a portion electrically connected to the image sensor chip 2 is mechanically sandwiched between the cover glass 4 and the image sensor chip 2. 6 allows the cover glass 4, the part 5a of the bonding wire 5, and the image sensor chip 2 to be firmly integrated.
  • the image sensor module 1 can be made extremely suitable for use in an in-vehicle camera, a smartphone, or the like, which is often subjected to vibration or shock.
  • the adhesive resin 6 is made to exist only outside the sensor region 2c of the image sensor chip 2 and is connected to the electrode in the bonding wire 5.
  • the inner surface 4a of the cover glass 4 and the image sensor chip 2 are integrated while covering the portion 5a.
  • a hollow gap 8 can be formed in front of the sensor region 2c of the image sensor chip 2.
  • the image sensor chip 2 described above can be easily and appropriately manufactured by a manufacturing method including the following first to fifth steps.
  • a plurality of image sensor chips 2 are die-bonded onto the substrate 3 with a gap between the plurality of image sensor chips 2 and the adjacent image sensor chips 2 (FIG. 6A).
  • a plurality of image sensor chips 2 are spaced apart from the image sensor chips 2 adjacent to each other in the X-axis direction x (see FIG. 6A) of the substrate 3.
  • Die bonding is performed so as to form an X-axis direction column 2e composed of the above, and an interval is provided between the X-axis direction column 2e adjacent to the Y-axis direction (not shown) orthogonal to the X-axis.
  • Die bonding is performed so as to open and form a plurality of X-axis direction rows 2e.
  • the bonding wire 5 is formed on the image sensor chip 2 so that a part 5a on the electrode 2d of the image sensor chip 2 is covered with at least the bonding resin 6.
  • the resin 6 is adhered (FIG. 6 (c)).
  • the adhesive resin 6 is dropped on each image sensor chip 2 so as to cover the entire upper surface 2b of each image sensor chip 2 and the upper side of the end surface in the thickness direction. That is, FIG. 6 shows a process of manufacturing the first example.
  • the cover glass 4 is placed on the image sensor chip 2 via the adhesive resin 6 applied in the third step (FIG. 6 (d)).
  • the cover glass 4 uses a cover glass 4 whose upper surface is coated with a peelable film 4b.
  • a gap 8 having a thickness of a part 5a of the bonding wire 5 is formed between the inner surface 4a of the cover glass 4 mounted in the fourth step and the upper surface 2b of the image sensor chip 2.
  • the cover glass 4 is pressed until the cover glass 4 is in a state of being pressed. Before the start of pressing, the gap 8 between the cover glass 4 and the image sensor chip 2 is not determined.
  • the cover glass 4 is floated on the image sensor chip 2 by the adhesive resin 6 (FIGS. 7 and 8).
  • the pressing is terminated when a state in which a part 5a of the bonding wire 5 is sandwiched between the cover glass 4 and the image sensor chip 2 is created (FIG. 9).
  • the gap 8 between the cover glass 4 and the image sensor chip 2 is controlled by the dimensions of a part 5a of the bonding wire 5.
  • the sealing resin 7 that covers a portion other than the upper surface of the cover glass 4 covered with the film on the upper surface 3a of the substrate 3 is molded (FIG. 6 (e)).
  • the substrate 3 is diced to generate a plurality of image sensor modules 1 based on the single substrate 3 (FIG. 6 (f)). Further, after this dicing or before this dicing, the film 4b is peeled off (FIG. 6 (g)).
  • the present invention is not limited to the embodiments described above, but includes all embodiments that can achieve the object of the present invention.
  • Image sensor module 2 Image sensor chip 2a Lower surface 2b Upper surface 2c Sensor area 2d Electrode 2e X direction row 3 Substrate 3a Upper surface 3b Electrode 3c Bump 4 Cover glass 4a Inner surface 4b Film 5 Bonding wire 5a Part 5b Second bond part 5c Ball bond part 6 Adhesive resin 7 Encapsulating resin 8 Gap

Abstract

This image sensor module is obtained by providing a cover glass disposed by making a gap in front of a sensor region in an image sensor chip, the gap being configured by a portion of a wire-bonding bonding wire electrically connected to an electrode of the image sensor chip.

Description

イメージセンサモジュール、及び、イメージセンサモジュールの製造方法Image sensor module and manufacturing method of image sensor module
　この発明は、イメージセンサモジュールの改良、および、その製造方法に関する。 The present invention relates to an improvement of an image sensor module and a method for manufacturing the same.
　イメージセンサモジュールにおいて、イメージセンサチップのイメージセンサの前方に、ギャップを作って配されるカバーガラスを備えたものとして、特許文献１～４に示されるものがある。 In the image sensor module, there are those shown in Patent Documents 1 to 4 as those provided with a cover glass arranged with a gap in front of the image sensor of the image sensor chip.
特開２０１８－６７６０号公報Japanese Unexamined Patent Publication No. 2018-6760 特開２００７－３１１４１６号公報Japanese Unexamined Patent Publication No. 2007-31416 特開２０１６－３３９６３号公報Japanese Unexamined Patent Publication No. 2016-33963 国際公開第２０１６/８４３９４号公報International Publication No. 2016/84394
　前記特許文献１～４のものはいずれも、前記ギャップを、前記イメージセンサチップと前記カバーガラスとの間に別体のスペーサを介在させるか、これに代わる前記カバーガラスの支持体を設けることにより、形成させるようにしている。 In all of Patent Documents 1 to 4, a separate spacer is interposed between the image sensor chip and the cover glass, or a support for the cover glass is provided in place of the gap. , I am trying to form it.
　この発明が解決しようとする主たる問題点は、この種のイメージセンサモジュールにおけるイメージセンサチップとカバーガラスとの間のギャップを、イメージセンサモジュールにそのための格別の構造をもたせることなく、合理的且つ適切に形成できるようにする点にある。 The main problem to be solved by the present invention is that the gap between the image sensor chip and the cover glass in this type of image sensor module is rational and appropriate without giving the image sensor module a special structure for that purpose. It is in the point that it can be formed in.
　前記課題を達成するために、この発明にあっては、第一の観点から、イメージセンサモジュールを、イメージセンサチップにおけるセンサ領域の前方に、ギャップを作って配されるカバーガラスを備えてなるイメージセンサーモジュールであって、
　前記ギャップを、前記イメージセンサチップの電極に電気的に接続されるワイヤーボンディングのボンディングワイヤーの一部によって構成させるようにしてなる、ものとした。 In order to achieve the above object, in the present invention, from the first viewpoint, the image sensor module is provided with a cover glass arranged in a gap in front of the sensor region in the image sensor chip. It ’s a sensor module.
The gap is configured to be configured by a portion of wire bonding bonding wires that are electrically connected to the electrodes of the image sensor chip.
　前記ボンディングワイヤーの一部を、前記ワイヤーボンディングにおけるボールボンド部分としておくことが、この発明の態様の一つとされる。あるいはまた、前記ボンディングワイヤーの一部を、前記ワイヤーボンディングにおけるセカンドボンド部分としておくことが、この発明の態様の一つとされる。 It is one of the aspects of the present invention that a part of the bonding wire is used as a ball bonding portion in the wire bonding. Alternatively, it is one of the aspects of the present invention that a part of the bonding wire is used as a second bonding portion in the wire bonding.
　また、少なくとも前記ボンディングワイヤーの一部を、前記イメージングチップと前記カバーガラスとの間に充填される前記カバーガラスの接着用樹脂によって覆うようにしておくとが、この発明の態様の一つとされる。あるいはまた、前記ギャップの全体に、前記カバーガラスの接着用樹脂を充填しておくことが、この発明の態様の一つとされる。 Further, one aspect of the present invention is to cover at least a part of the bonding wire with an adhesive resin for the cover glass filled between the imaging chip and the cover glass. .. Alternatively, it is one of the aspects of the present invention that the entire gap is filled with the adhesive resin for the cover glass.
　また、前記課題を達成するために、この発明にあっては、第二の観点から、イメージセンサモジュールの製造方法を、複数のイメージセンサチップを、隣り合う前記イメージセンサチップとの間に間隔を開けて、基板上にダイボンディングする第一ステップと、
　前記第一ステップによって前記基板上に配された前記イメージセンサチップの電極と前記基板とをワイヤーボンディングのボンディングワイヤーによって電気的に接続させる第二ステップと、
　前記第二ステップによって形成された前記ボンディングワイヤーにおける前記イメージセンサチップの電極上にある一部が少なくとも接着用樹脂で覆われるように前記イメージセンサチップ上に前記接着用樹脂を付着させる第三ステップと、
　前記第三ステップにおいて塗布された接着用樹脂を介して前記イメージセンサチップ上にカバーガラスを載置させる第四ステップと、
　前記の第四ステップにおいて載置された前記カバーガラスの内面と前記イメージセンサチップの上面との間に前記ボンディングワイヤーの一部の厚さ分のギャップが形成される状態となるまで前記カバーガラスを押圧する第五ステップとを含む、ものとした。 Further, in order to achieve the above object, in the present invention, from the second viewpoint, a method of manufacturing an image sensor module, a plurality of image sensor chips, and an interval between adjacent image sensor chips are provided. The first step of opening and die bonding on the substrate,
The second step of electrically connecting the electrodes of the image sensor chip arranged on the substrate and the substrate by the bonding wire of wire bonding in the first step.
The third step of adhering the adhesive resin onto the image sensor chip so that at least a part of the bonding wire formed by the second step on the electrode of the image sensor chip is covered with the adhesive resin. ,
The fourth step of placing the cover glass on the image sensor chip via the adhesive resin applied in the third step, and the fourth step.
The cover glass is placed until a gap corresponding to a part of the thickness of the bonding wire is formed between the inner surface of the cover glass placed in the fourth step and the upper surface of the image sensor chip. It was assumed that the fifth step of pressing was included.
　この発明によれば、この種のイメージセンサモジュールにおけるイメージセンサチップとカバーガラスとの間のギャップを、イメージセンサモジュールにそのための格別の構造をもたせることなく、合理的且つ適切に形成することができる。 According to the present invention, the gap between the image sensor chip and the cover glass in this type of image sensor module can be reasonably and appropriately formed without giving the image sensor module a special structure for that purpose. ..
図１は、この発明の一実施の形態にかかるイメージセンサモジュール（第一例）の正面構成図である。FIG. 1 is a front view of an image sensor module (first example) according to an embodiment of the present invention. 図２は、前記第一例の断面構成図である。FIG. 2 is a cross-sectional configuration diagram of the first example. 図３は、この発明の一実施の形態にかかるイメージセンサモジュール（第二例）の断面構成図である。FIG. 3 is a cross-sectional configuration diagram of an image sensor module (second example) according to an embodiment of the present invention. 図４は、この発明の一実施の形態にかかるイメージセンサモジュール（第三例）の断面構成図である。FIG. 4 is a cross-sectional configuration diagram of an image sensor module (third example) according to an embodiment of the present invention. 図５は、この発明の一実施の形態にかかるイメージセンサモジュール（第四例）の断面構成図である。FIG. 5 is a cross-sectional configuration diagram of an image sensor module (fourth example) according to an embodiment of the present invention. 図６は、前記第一例を製造する製造方法を構成する各工程の内容を理解しやすいように示した構成図である。FIG. 6 is a configuration diagram showing the contents of each step constituting the manufacturing method for manufacturing the first example so as to be easy to understand. 図７は、前記製造方法において、基板上に配されたイメージセンサチップ上にカバーガラスを載せた直後の状態を示した断面構成図である。FIG. 7 is a cross-sectional configuration diagram showing a state immediately after the cover glass is placed on the image sensor chip arranged on the substrate in the manufacturing method. 図８は、図７におけるＡ部の拡大図であり、図８（ｂ）は図８（ａ）におけるＢ－Ｂ線位置での断面図である。FIG. 8 is an enlarged view of part A in FIG. 7, and FIG. 8 (b) is a cross-sectional view taken along the line BB in FIG. 8 (a). 図９は、前記製造方法において、基板上に配されたイメージセンサチップ上にカバーガラスを載せた状態から、カバーガラスとイメージセンサチップとによってボンディングワイヤーの一部を挟み付けるようになるまでカバーガラスを押圧した状態を示した拡大断面構成図であり、図９（ｂ）は図９（ａ）におけるＣ－Ｃ線位置での断面図である。FIG. 9 shows the cover glass from the state where the cover glass is placed on the image sensor chip arranged on the substrate in the manufacturing method until a part of the bonding wire is sandwiched between the cover glass and the image sensor chip. 9 (b) is a cross-sectional view taken along the line CC in FIG. 9 (a).
　以下、図１～図９に基づいて、この発明の典型的な実施の形態について、説明する。 Hereinafter, a typical embodiment of the present invention will be described with reference to FIGS. 1 to 9.
　この実施の形態にかかるイメージセンサモジュール１は、各種の機器や装置に組み込まれてこれらの機器や装置に撮像機能を付加するものである。具体的には、かかるイメージセンサモジュール１は、これを構成するイメージセンサチップ２（撮像素子）によってこれらの機器などに備えられた対物レンズによって結像された像を電気信号に変換することで、これらの機器などに撮像機能を付加するものである。この実施の形態にかかるイメージセンサモジュール１は、特に、振動や衝撃が作用されることが多い車載カメラ、スマートフォン、携帯型電子端末などに利用されるのに適した構造を備えている。 The image sensor module 1 according to this embodiment is incorporated in various devices and devices to add an imaging function to these devices and devices. Specifically, the image sensor module 1 converts an image formed by an objective lens provided in these devices or the like into an electric signal by an image sensor chip 2 (imaging element) constituting the image sensor module 1. An image pickup function is added to these devices and the like. The image sensor module 1 according to this embodiment has a structure suitable for being used in an in-vehicle camera, a smartphone, a portable electronic terminal, etc., which are often subjected to vibration or shock.
　図１及び図２にイメージセンサモジュール１の概要を示す。図示の例では、四角形の板状をなす基板３の上面３ａに、基板３より小さい四角形の板状をなすイメージセンサチップ２が基板３の上面３ａにイメージセンサチップ２の下面２ａを接しさせるようにして配されている。イメージセンサチップ２の上面２ｂの中央にはセンサ領域２ｃ（受光部）が形成されている。また、イメージセンサチップ２上には、イメージセンサチップ２と実質的に同じ大きさの四角形の板状をなすカバーガラス４が、イメージセンサチップ２の上面２ｂにカバーガラス４の一面（以下、このカバーガラス４の一面を内面４ａと称する。）を向き合わせるようにして、配されている。カバーガラス４はその各辺をイメージセンサチップ２の対応する各辺に沿わせるようにしてイメージセンサチップ２上に配されている。 The outline of the image sensor module 1 is shown in FIGS. 1 and 2. In the illustrated example, the image sensor chip 2 having a quadrangular plate shape smaller than the substrate 3 is in contact with the upper surface 3a of the substrate 3 so that the lower surface 2a of the image sensor chip 2 is in contact with the upper surface 3a of the quadrangular plate-shaped substrate 3. It is arranged as. A sensor region 2c (light receiving portion) is formed in the center of the upper surface 2b of the image sensor chip 2. Further, on the image sensor chip 2, a quadrangular plate-shaped cover glass 4 having substantially the same size as the image sensor chip 2 is provided, and one surface of the cover glass 4 (hereinafter, this) is placed on the upper surface 2b of the image sensor chip 2. One side of the cover glass 4 is referred to as an inner surface 4a) so as to face each other. The cover glass 4 is arranged on the image sensor chip 2 so that each side thereof is aligned with each corresponding side of the image sensor chip 2.
　イメージセンサチップ２と基板３は、ワイヤーボンディングによって生成されるボンディングワイヤー５によって電気的に接続されている。具体的には、イメージセンサチップ２のセンサ領域の外側に形成されている複数の電極２ｄ（ボンディングパッド）と、基板３におけるイメージセンサチップ２の外側に形成されている複数の電極３ｂとのうち、対応するもの同士が前記ボンディングワイヤー５によって接続されている。なお、図２中符号３ｃは基板３内を貫通する図示しない配線の端末に形成されたバンプであり、前記のように基板３と電気的に接続されたイメージセンサチップ２から得られる電気信号はこのバンプ３ｃから出力されるようになっている。 The image sensor chip 2 and the substrate 3 are electrically connected by a bonding wire 5 generated by wire bonding. Specifically, of the plurality of electrodes 2d (bonding pads) formed outside the sensor region of the image sensor chip 2 and the plurality of electrodes 3b formed outside the image sensor chip 2 on the substrate 3. , Corresponding ones are connected to each other by the bonding wire 5. Reference numeral 3c in FIG. 2 is a bump formed on a terminal of wiring (not shown) penetrating the inside of the substrate 3, and the electric signal obtained from the image sensor chip 2 electrically connected to the substrate 3 as described above is It is designed to be output from this bump 3c.
　カバーガラス４は接着用樹脂６によってイメージセンサチップ２に固定されている。 The cover glass 4 is fixed to the image sensor chip 2 by the adhesive resin 6.
　また、基板３の上面３ａにおけるイメージセンサチップ２とカバーガラス４の配置箇所以外の箇所は、封止樹脂７によって覆われている。図示の例では、後述のフィルム４ｂの厚さ分の段差がカバーガラス４の上面と封止樹脂７の上面との間に形成されている。 Further, the portion of the upper surface 3a of the substrate 3 other than the location where the image sensor chip 2 and the cover glass 4 are arranged is covered with the sealing resin 7. In the illustrated example, a step corresponding to the thickness of the film 4b, which will be described later, is formed between the upper surface of the cover glass 4 and the upper surface of the sealing resin 7.
　また、前記カバーガラス４の内面４ａと、イメージセンサチップ２におけるセンサ領域２ｃとの間には、ギャップ８が形成されている。 Further, a gap 8 is formed between the inner surface 4a of the cover glass 4 and the sensor region 2c of the image sensor chip 2.
　この実施の形態にあっては、前記ギャップ８を、前記イメージセンサチップ２の電極２ｄに電気的に接続されるワイヤーボンディングのボンディングワイヤー５の一部５ａによって構成させている。 In this embodiment, the gap 8 is formed by a part 5a of a bonding wire 5 of wire bonding that is electrically connected to the electrode 2d of the image sensor chip 2.
　すなわち、カバーガラス４は、カバーガラス４の内面４ａと、イメージセンサチップ２の電極２ｄとの間で、ボンディングワイヤー５の一部５ａを挟み付けるようにして、イメージセンサチップ２に接着用樹脂６によって固定されている。 That is, the cover glass 4 sandwiches a part 5a of the bonding wire 5 between the inner surface 4a of the cover glass 4 and the electrode 2d of the image sensor chip 2, and the adhesive resin 6 is attached to the image sensor chip 2. Is fixed by.
　これにより、この実施の形態によれば、イメージセンサモジュール１におけるイメージセンサチップ２とカバーガラス４との間のギャップ８を形成させるための格別の構造を用意することなく、かかるギャップ８を適切に備えたイメージセンサモジュール１を構成することが可能となる。 Thereby, according to this embodiment, the gap 8 can be appropriately formed without preparing a special structure for forming the gap 8 between the image sensor chip 2 and the cover glass 4 in the image sensor module 1. It is possible to configure the provided image sensor module 1.
　ボンデイングワイヤー５の線径は、イメージセンサチップ２の電極２ｄの大きさ、基板３の電極の大きさ、必要とされるギャップ８のギャップ量などを考慮して決定される。
　例えば、イメージセンサチップ２の電極２ｄが一辺を４０μｍとする四角形で、ギャップ８のギャップ量が５０μｍ必要とされるときは、線径を１５～２０μｍとするボンディングワイヤー５によって後述のボールボンド部分５ｃを形成してギャップ量５０μｍのギャップ８を形成するようにする。
　また、例えば、イメージセンサチップ２の電極２ｄが一辺を８０μｍとする四角形で、ギャップ８のギャップ量が３０μｍ必要とされるときは、線径を３０μｍとするボンディングワイヤー５の後述のセカンドボンド部分５ｂによりギャップ量３０μｍのギャップ８を形成するようにする。 The wire diameter of the bonding wire 5 is determined in consideration of the size of the electrode 2d of the image sensor chip 2, the size of the electrode of the substrate 3, the required gap amount of the gap 8, and the like.
For example, when the electrode 2d of the image sensor chip 2 is a quadrangle having a side of 40 μm and the gap amount of the gap 8 is required to be 50 μm, the ball bond portion 5c described later is provided by the bonding wire 5 having a wire diameter of 15 to 20 μm. Is formed so as to form a gap 8 having a gap amount of 50 μm.
Further, for example, when the electrode 2d of the image sensor chip 2 is a quadrangle having a side of 80 μm and the gap amount of the gap 8 is required to be 30 μm, the second bond portion 5b described later of the bonding wire 5 having a wire diameter of 30 μm is required. A gap 8 having a gap amount of 30 μm is formed.
　図１及び図２に示される第一例、及び、図３に示される第二例では、前記ボンディングワイヤー５の一部５ａを、前記ワイヤーボンディングにおけるセカンドボンド部分５ｂ（ウエッジボンドとも称する。）としている。このようにした場合、前記ギャップ８が前記セカンドボンド部分５ｂを構成するボンディングワイヤー５の線径と実質的に等しくなるようにしたイメージセンサモジュール１を容易且つ適切に提供することが可能となる。 In the first example shown in FIGS. 1 and 2 and the second example shown in FIG. 3, a part 5a of the bonding wire 5 is used as a second bond portion 5b (also referred to as a wedge bond) in the wire bonding. There is. In this case, it is possible to easily and appropriately provide the image sensor module 1 in which the gap 8 is substantially equal to the wire diameter of the bonding wire 5 constituting the second bond portion 5b.
　図４に示される第三例、及び、図５に示される第四例では、前記ボンディングワイヤー５の一部５ａを、前記ワイヤーボンディングにおけるボールボンド部分５ｃ（ファーストボンドとも称する。）としている。このようにした場合、前記ギャップ８が前記ボールボンド部分５ｃのボール状をなす突起の高さと実質的に等しくなるようにしたイメージセンサモジュール１を容易且つ適切に提供することが可能となる。 In the third example shown in FIG. 4 and the fourth example shown in FIG. 5, a part 5a of the bonding wire 5 is a ball bond part 5c (also referred to as a first bond) in the wire bonding. In this case, it is possible to easily and appropriately provide the image sensor module 1 in which the gap 8 is substantially equal to the height of the ball-shaped protrusion of the ball bond portion 5c.
　前記第一例、及び、第三例では、接着用樹脂６は、イメージセンサチップ２のセンサ領域２ｃを含んだイメージセンサチップ２の上面２ｂの全体に存在しており、ボンディングワイヤー５における前記電極２ｄに接続された一部５ａを覆った状態でカバーガラス４の内面４ａとイメージセンサチップ２とをイメージセンサチップ２の上面２ｂの全体に亘って一体化させている。このようにした場合、イメージセンサチップ２のセンサ領域の前方に中実のギャップ８を形成させることができる。このように、イメージセンサチップ２のセンサ領域２ｃを含んだイメージセンサチップ２の上面２ｂの全体を接着用樹脂６で覆うようにする場合、接着用樹脂６は、光の屈折率を１．５以下とし、かつ、可視光透過率を９５％以上とするものを使用することが好ましい。また、カバーガラス４とイメージセンサチップ２との間でイメージセンサチップ２に対するボンディングワイヤー５の電気的に接続された箇所としての前記一部５ａを機械的に挟み付けた状態で、前記接着用樹脂６によってカバーガラス４とボンディングワイヤー５の一部５ａとイメージセンサチップ２とを強固に一体化させることができる。これによって、イメージセンサモジュール１を振動や衝撃が作用されることが多い車載カメラやスマートフォンなどに利用するのに極めて適したものとすることができる。 In the first example and the third example, the adhesive resin 6 exists on the entire upper surface 2b of the image sensor chip 2 including the sensor region 2c of the image sensor chip 2, and the electrode on the bonding wire 5 The inner surface 4a of the cover glass 4 and the image sensor chip 2 are integrated over the entire upper surface 2b of the image sensor chip 2 in a state of covering a part 5a connected to 2d. In this case, a solid gap 8 can be formed in front of the sensor region of the image sensor chip 2. In this way, when the entire upper surface 2b of the image sensor chip 2 including the sensor region 2c of the image sensor chip 2 is covered with the adhesive resin 6, the adhesive resin 6 has a refractive index of light of 1.5. It is preferable to use one having the following and a visible light transmittance of 95% or more. Further, the adhesive resin is in a state where the part 5a as a portion electrically connected to the image sensor chip 2 is mechanically sandwiched between the cover glass 4 and the image sensor chip 2. 6 allows the cover glass 4, the part 5a of the bonding wire 5, and the image sensor chip 2 to be firmly integrated. As a result, the image sensor module 1 can be made extremely suitable for use in an in-vehicle camera, a smartphone, or the like, which is often subjected to vibration or shock.
　また、前記第二例、及び、第四例では、接着用樹脂６は、イメージセンサチップ２のセンサ領域２ｃの外側にのみ存在するようにしてあり、ボンディングワイヤー５における前記電極に接続された一部５ａを覆った状態でカバーガラス４の内面４ａとイメージセンサチップ２とを一体化させている。このようにした場合、イメージセンサチップ２のセンサ領域２ｃの前方に、中空のギャップ８を形成させることができる。 Further, in the second example and the fourth example, the adhesive resin 6 is made to exist only outside the sensor region 2c of the image sensor chip 2 and is connected to the electrode in the bonding wire 5. The inner surface 4a of the cover glass 4 and the image sensor chip 2 are integrated while covering the portion 5a. In this case, a hollow gap 8 can be formed in front of the sensor region 2c of the image sensor chip 2.
　以上に説明したイメージセンサチップ２は、以下の第一～第五のステップを含む製造方法によって、容易且つ適切に製造することが可能となる。 The image sensor chip 2 described above can be easily and appropriately manufactured by a manufacturing method including the following first to fifth steps.
（第一ステップ）
　先ず、複数のイメージセンサチップ２を、隣り合う前記イメージセンサチップ２との間に間隔を開けて、基板３上にダイボンディングする（図６（ａ））。
　図示の例では、基板３の一部のみを側方から見て表している。典型的には、一枚の基板３上に、この基板３のＸ軸方向ｘ（図６（ａ）参照）に隣り合うイメージセンサチップ２との間に間隔を開けて複数のイメージセンサチップ２からなるＸ軸方向列２ｅが形成されるようにダイボンディングがなされると共に、前記Ｘ軸に直交するＹ軸方向（図示は省略する）に隣り合う前記Ｘ軸方向列２ｅとの間に間隔を開けて複数のＸ軸方向列２ｅを形成させるようにダイボンディングがなされる。 (First step)
First, a plurality of image sensor chips 2 are die-bonded onto the substrate 3 with a gap between the plurality of image sensor chips 2 and the adjacent image sensor chips 2 (FIG. 6A).
In the illustrated example, only a part of the substrate 3 is viewed from the side. Typically, on one substrate 3, a plurality of image sensor chips 2 are spaced apart from the image sensor chips 2 adjacent to each other in the X-axis direction x (see FIG. 6A) of the substrate 3. Die bonding is performed so as to form an X-axis direction column 2e composed of the above, and an interval is provided between the X-axis direction column 2e adjacent to the Y-axis direction (not shown) orthogonal to the X-axis. Die bonding is performed so as to open and form a plurality of X-axis direction rows 2e.
（第二ステップ）
　次いで、前記第一ステップによって前記基板３上に配された前記イメージセンサチップ２の電極２ｄと前記基板３の電極３ｂとをワイヤーボンディングのボンディングワイヤー５によって電気的に接続させる（図６（ｂ））。 (Second step)
Next, the electrode 2d of the image sensor chip 2 arranged on the substrate 3 by the first step and the electrode 3b of the substrate 3 are electrically connected by a bonding wire 5 of wire bonding (FIG. 6B). ).
（第三ステップ）
　次いで、前記第二ステップによって形成された前記ボンディングワイヤー５における前記イメージセンサチップ２の電極２ｄ上にある一部５ａが少なくとも接着用樹脂６で覆われるように前記イメージセンサチップ２上に前記接着用樹脂６を付着させる（図６（ｃ））。
　図示の例では、接着用樹脂６は、各イメージセンサチップ２の上面２ｂの全体と厚さ方向の端面の上部側とを覆うように、各イメージセンサチップ２毎に滴下されている。すなわち、図６は前記第一例を製造する工程を示している。 (Third step)
Next, the bonding wire 5 is formed on the image sensor chip 2 so that a part 5a on the electrode 2d of the image sensor chip 2 is covered with at least the bonding resin 6. The resin 6 is adhered (FIG. 6 (c)).
In the illustrated example, the adhesive resin 6 is dropped on each image sensor chip 2 so as to cover the entire upper surface 2b of each image sensor chip 2 and the upper side of the end surface in the thickness direction. That is, FIG. 6 shows a process of manufacturing the first example.
（第四ステップ）
　次いで、前記第三ステップにおいて塗布された接着用樹脂６を介して前記イメージセンサチップ２上にカバーガラス４を載置させる（図６（ｄ））。
　図示の例では、カバーガラス４は、その上面を剥離可能なフィルム４ｂで被覆したものを使用している。 (4th step)
Next, the cover glass 4 is placed on the image sensor chip 2 via the adhesive resin 6 applied in the third step (FIG. 6 (d)).
In the illustrated example, the cover glass 4 uses a cover glass 4 whose upper surface is coated with a peelable film 4b.
（第五ステップ）
　次いで、前記の第四ステップにおいて載置された前記カバーガラス４の内面４ａと前記イメージセンサチップ２の上面２ｂとの間に前記ボンディングワイヤー５の一部５ａの厚さ分のギャップ８が形成される状態となるまで前記カバーガラス４を押圧する。
　押圧開始前は、カバーガラス４とイメージセンサチップ２との間のギャップ８は定まらない。カバーガラス４は接着用樹脂６によってイメージセンサチップ２上にいわば浮かんでいる（図７、図８）。押圧はカバーガラス４とイメージセンサチップ２との間にボンディングワイヤー５の一部５ａが挟み付けられる状態が作り出された時点で終了する（図９）。これにより、カバーガラス４とイメージセンサチップ２との間のギャップ８がボンディングワイヤー５の一部５ａの寸法によって制御される。 (Fifth step)
Next, a gap 8 having a thickness of a part 5a of the bonding wire 5 is formed between the inner surface 4a of the cover glass 4 mounted in the fourth step and the upper surface 2b of the image sensor chip 2. The cover glass 4 is pressed until the cover glass 4 is in a state of being pressed.
Before the start of pressing, the gap 8 between the cover glass 4 and the image sensor chip 2 is not determined. The cover glass 4 is floated on the image sensor chip 2 by the adhesive resin 6 (FIGS. 7 and 8). The pressing is terminated when a state in which a part 5a of the bonding wire 5 is sandwiched between the cover glass 4 and the image sensor chip 2 is created (FIG. 9). As a result, the gap 8 between the cover glass 4 and the image sensor chip 2 is controlled by the dimensions of a part 5a of the bonding wire 5.
　図示の例では、第五ステップ後、前記基板３の上面３ａにおける前記フィルムで覆われたカバーガラス４の上面以外の箇所を覆う封止樹脂７をモールディングしている（図６（ｅ））。この後、前記基板３はダイシングされて一枚の前記基板３を基にして複数のイメージセンサモジュール１が生成される（図６（ｆ））。また、このダイシング後、あるいは、このダイシングの前に、前記フィルム４ｂの剥ぎ取りがなされる（図６（ｇ））。 In the illustrated example, after the fifth step, the sealing resin 7 that covers a portion other than the upper surface of the cover glass 4 covered with the film on the upper surface 3a of the substrate 3 is molded (FIG. 6 (e)). After that, the substrate 3 is diced to generate a plurality of image sensor modules 1 based on the single substrate 3 (FIG. 6 (f)). Further, after this dicing or before this dicing, the film 4b is peeled off (FIG. 6 (g)).
　なお、当然のことながら、本発明は以上に説明した実施態様に限定されるものではなく、本発明の目的を達成し得るすべての実施態様を含むものである。 As a matter of course, the present invention is not limited to the embodiments described above, but includes all embodiments that can achieve the object of the present invention.
　１　イメージセンサモジュール
　２　イメージセンサチップ
　２ａ　下面
　２ｂ　上面
　２ｃ　センサ領域
　２ｄ　電極
　２ｅ　Ｘ方向列
　３　基板
　３ａ　上面
　３ｂ　電極
　３ｃ　バンプ
　４　カバーガラス
　４ａ　内面
　４ｂ　フィルム
　５　ボンディングワイヤー
　５ａ　一部
　５ｂ　セカンドボンド部分
　５ｃ　ボールボンド部分
　６　接着用樹脂
　７　封止樹脂
　８　ギャップ

                                                                         1 Image sensor module 2 Image sensor chip 2a Lower surface 2b Upper surface 2c Sensor area 2d Electrode 2e X direction row 3 Substrate 3a Upper surface 3b Electrode 3c Bump 4 Cover glass 4a Inner surface 4b Film 5 Bonding wire 5a Part 5b Second bond part 5c Ball bond part 6 Adhesive resin 7 Encapsulating resin 8 Gap

Claims (6)

  1. 　イメージセンサチップにおけるセンサ領域の前方に、ギャップを作って配されるカバーガラスを備えてなるイメージセンサーモジュールであって、
    　前記ギャップを、前記イメージセンサチップの電極に電気的に接続されるワイヤーボンディングのボンディングワイヤーの一部によって構成させるようにしてなる、イメージセンサモジュール。     An image sensor module having a cover glass arranged in a gap in front of the sensor area in the image sensor chip.
    An image sensor module in which the gap is formed by a part of a bonding wire of wire bonding electrically connected to an electrode of the image sensor chip.
  2. 　前記ボンディングワイヤーの一部を、前記ワイヤーボンディングにおけるボールボンド部分としてなる、請求項１に記載のイメージセンサモジュール。 The image sensor module according to claim 1, wherein a part of the bonding wire serves as a ball bonding portion in the wire bonding.
  3. 　前記ボンディングワイヤーの一部を、前記ワイヤーボンディングにおけるセカンドボンド部分としてなる、請求項１に記載のイメージセンサモジュール。 The image sensor module according to claim 1, wherein a part of the bonding wire serves as a second bonding portion in the wire bonding.
  4. 　少なくとも前記ボンディングワイヤーの一部を、前記イメージングチップと前記カバーガラスとの間に充填される前記カバーガラスの接着用樹脂によって覆うようにしてなる、請求項１～請求項３のいずれか１項に記載のイメージセンサモジュール。 The invention according to any one of claims 1 to 3, wherein at least a part of the bonding wire is covered with an adhesive resin for the cover glass filled between the imaging chip and the cover glass. The image sensor module described.
  5. 　前記ギャップの全体に、前記カバーガラスの接着用樹脂を充填してなる、請求項１～請求項３のいずれか１項に記載のイメージセンサモジュール。 The image sensor module according to any one of claims 1 to 3, wherein the entire gap is filled with an adhesive resin for the cover glass.
  6. 　複数のイメージセンサチップを、隣り合う前記イメージセンサチップとの間に間隔を開けて、基板上にダイボンディングする第一ステップと、
    　前記第一ステップによって前記基板上に配された前記イメージセンサチップの電極と前記基板とをワイヤーボンディングのボンディングワイヤーによって電気的に接続させる第二ステップと、
    　前記第二ステップによって形成された前記ボンディングワイヤーにおける前記イメージセンサチップの電極上にある一部が少なくとも接着用樹脂で覆われるように前記イメージセンサチップ上に前記接着用樹脂を付着させる第三ステップと、
    　前記第三ステップにおいて付着された接着用樹脂を介して前記イメージセンサチップ上にカバーガラスを載置させる第四ステップと、
    　前記の第四ステップにおいて載置された前記カバーガラスの内面と前記イメージセンサチップの上面との間に前記ボンディングワイヤーの一部の厚さ分のギャップが形成される状態となるまで前記カバーガラスを押圧する第五ステップとを含む、イメージセンサモジュールの製造方法。     The first step of die-bonding a plurality of image sensor chips onto a substrate at intervals from adjacent image sensor chips,
    The second step of electrically connecting the electrodes of the image sensor chip arranged on the substrate and the substrate by the bonding wire of wire bonding in the first step.
    The third step of adhering the adhesive resin onto the image sensor chip so that at least a part of the bonding wire formed by the second step on the electrode of the image sensor chip is covered with the adhesive resin. ,
    The fourth step of placing the cover glass on the image sensor chip via the adhesive resin adhered in the third step, and the fourth step.
    The cover glass is held until a gap corresponding to a part of the thickness of the bonding wire is formed between the inner surface of the cover glass placed in the fourth step and the upper surface of the image sensor chip. A method of manufacturing an image sensor module, including a fifth step of pressing.
PCT/JP2019/044651 2019-11-14 2019-11-14 Image sensor module and method for manufacturing image sensor module WO2021095193A1 (en)

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