WO2020261990A1 - ウエハ載置台及びその製法 - Google Patents

ウエハ載置台及びその製法 Download PDF

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Publication number
WO2020261990A1
WO2020261990A1 PCT/JP2020/022830 JP2020022830W WO2020261990A1 WO 2020261990 A1 WO2020261990 A1 WO 2020261990A1 JP 2020022830 W JP2020022830 W JP 2020022830W WO 2020261990 A1 WO2020261990 A1 WO 2020261990A1
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Prior art keywords
sintered body
ceramic sintered
convex portion
wafer mounting
wafer
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PCT/JP2020/022830
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English (en)
French (fr)
Inventor
央史 竹林
賢一郎 相川
達也 久野
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NGK Insulators Ltd
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NGK Insulators Ltd
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Priority to KR1020217040469A priority Critical patent/KR102672383B1/ko
Priority to CN202080047761.6A priority patent/CN114072901A/zh
Priority to JP2021528133A priority patent/JP7284261B2/ja
Publication of WO2020261990A1 publication Critical patent/WO2020261990A1/ja
Priority to US17/643,600 priority patent/US12087613B2/en
Anticipated expiration legal-status Critical
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7616—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating, a hardness or a material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23Q—DETAILS, COMPONENTS, OR ACCESSORIES FOR MACHINE TOOLS, e.g. ARRANGEMENTS FOR COPYING OR CONTROLLING; MACHINE TOOLS IN GENERAL CHARACTERISED BY THE CONSTRUCTION OF PARTICULAR DETAILS OR COMPONENTS; COMBINATIONS OR ASSOCIATIONS OF METAL-WORKING MACHINES, NOT DIRECTED TO A PARTICULAR RESULT
    • B23Q3/00—Devices holding, supporting, or positioning work or tools, of a kind normally removable from the machine
    • B23Q3/15—Devices for holding work using magnetic or electric force acting directly on the work
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
    • C23C4/02—Pretreatment of the material to be coated, e.g. for coating on selected surface areas
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
    • C23C4/12—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the method of spraying
    • C23C4/134—Plasma spraying
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H10P72/722—Details of electrostatic chucks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7614—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7624—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support

Definitions

  • the present invention relates to a wafer mounting table and a manufacturing method thereof.
  • a wafer mounting table on which a wafer is placed is used in a film forming process such as transporting, exposing, and CVD of a semiconductor wafer, and in microfabrication such as cleaning, etching, and dicing.
  • a wafer mounting table a ceramic sintered body having irregularities formed on its upper surface by erosion processing (blasting), an electrostatic electrode embedded in the ceramic sintered body, and its electrostatic charge Those provided with a terminal for connecting an electrode to an external power source are disclosed.
  • the upper surface of the ceramic sintered body is mirror-finished, the portion where the convex portion is to be formed is covered with a mask, and the portion not covered by the mask is crushed by erosion processing. Is common (see FIG. 2).
  • the present invention has been made to solve such a problem, and a main object thereof is to prevent the generation of particles in a semiconductor process.
  • the wafer mounting table of the present invention A wafer mounting table having a plurality of protrusions on the surface of a ceramic sintered body to support a wafer.
  • the portion of the surface of the ceramic sintered body without the convex portion is a mirror surface having a surface roughness Ra of 0.1 ⁇ m or less.
  • the convex portion is an aerosol deposition (AD) film or a thermal sprayed film made of the same material as the ceramic sintered body. It is a thing.
  • This wafer mounting table can be obtained, for example, by mirror-finishing the surface of the ceramic sintered body and then forming an AD film or a thermal sprayed film at a portion where a convex portion is desired to be formed. Since the portion of the surface of the ceramic sintered body of the wafer mounting table without the convex portion is a mirror surface, it does not cause the generation of particles. Therefore, according to this wafer mounting table, it is possible to prevent the generation of particles in the semiconductor process.
  • the convex portion may have rounded corners (boundary between the top surface and the side surface). In this way, the corner of the convex portion is unlikely to be a stress concentration point with respect to the mechanical external force.
  • the convex portion may be less dense than the ceramic sintered body.
  • the ceramic sintered body can be made dense by adopting hot press firing or the like.
  • the convex portion is an AD film or a thermal sprayed film, the density is lower than that of the ceramic sintered body.
  • the manufacturing method of the wafer mounting table of the present invention is (A) A process of mirror-finishing the surface of the ceramic sintered body and (B) A step of forming a convex portion on the portion of the surface on which the convex portion is desired to be formed by an AD method or a thermal spraying method. Is included.
  • the wafer mounting table of the present invention described above can be manufactured relatively easily.
  • the manufacturing process diagram of the wafer mounting table of this embodiment A manufacturing process diagram of a conventional wafer mounting table.
  • FIG. 1 is a manufacturing process diagram (vertical cross-sectional view) of the wafer mounting table of the present embodiment.
  • the wafer mounting table is provided with a plurality of convex portions that support the wafer on the surface of the disk-shaped ceramic sintered body.
  • the portion of the surface of the ceramic sintered body having no convex portion is a mirror surface having a surface roughness Ra of 0.1 ⁇ m or less.
  • the convex portion is an AD film or a thermal sprayed film made of the same material as the ceramic sintered body.
  • the corners of the convex portion (the boundary between the top surface and the side surface) are rounded in cross section. Looking at the cross section of the wafer mounting table, the convex portion has a lower density than the ceramic sintered body.
  • the ceramic sintered body is made dense by adopting hot press firing.
  • the convex portion is an AD film or a thermal sprayed film
  • the density is lower than that of the ceramic sintered body (for example, the porosity is high).
  • the ceramic sintered body may include at least one of an electrostatic electrode, an RF electrode, and a heater electrode (resistive heating element).
  • the top surface of the convex portion may be polished.
  • the wafer mounting table is manufactured by (a) a step of mirror-finishing the surface of the ceramic sintered body and (b) an AD method (including a plasma AD method) or a thermal spraying method on the portion of the surface where a convex portion is desired to be formed. It includes a step of forming a convex portion.
  • the surface may be covered with a mask so that only the portion of the surface on which the convex portion is to be formed is exposed, and the convex portion may be formed on the exposed portion by the AD method or the thermal spraying method. Since the AD method can form ceramic particles by the impact solidification phenomenon, it is not necessary to sinter the ceramic particles at a high temperature.
  • the convex portion is formed of an AD film rather than a sprayed film. This is because the AD film is relatively dense and has high adhesion to the surface.
  • the convex portion is formed by the thermal spraying method, it is preferable to roughen the portion where the convex portion is to be formed in order to improve the adhesion.
  • the portion of the surface of the ceramic sintered body having no convex portion is a mirror surface, it does not cause the generation of particles. Therefore, according to this wafer mounting table, it is possible to prevent the generation of particles in the semiconductor process.
  • the present invention can be used for, for example, film forming processes such as semiconductor wafer transfer, exposure, and CVD, and microfabrication such as cleaning, etching, and dicing.

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

ウエハ載置台は、セラミック焼結体の表面にウエハを支持する複数の凸部を備えている。セラミック焼結体の表面のうち凸部のない部分は、表面粗さＲａが０．１μｍ以下の鏡面である。凸部は、セラミック焼結体と同じ材質のエアロゾルデポジション膜又は溶射膜である。

Description

ウエハ載置台及びその製法
　本発明は、ウエハ載置台及びその製法に関する。
　従来、半導体ウエハの搬送、露光、ＣＶＤなどの成膜プロセスや、洗浄、エッチング、ダイシングなどの微細加工においては、ウエハを載置するウエハ載置台が使用される。特許文献１には、こうしたウエハ載置台として、上面部にエロージョン加工（ブラスト加工）によって凹凸が形成されたセラミック焼結体と、そのセラミック焼結体に埋設された静電電極と、その静電電極を外部電源に接続する端子とを備えたものが開示されている。
特開２００６－１４７７２４号公報
　セラミック焼結体の上面部にエロージョン加工を施す場合、セラミック焼結体の上面部を鏡面仕上げし、凸部を形成したい箇所をマスクで覆い、マスクで覆われていない箇所をエロージョン加工で粉砕するのが一般的である（図２参照）。
　しかしながら、セラミック焼結体の上面部のうちエロージョン加工面を微視的に観察すると、脱粒しかけた箇所やエロージョン加工のメディアの残渣等が残った箇所が見られることがある。こうした箇所があると、半導体プロセスにおいて好ましくないパーティクルの発生原因になるおそれがある。この点を改善するために、例えば柔らかい材料を用いてエロージョン加工面を表面処理（例えば研磨）することなどが考えられるが、磨いたあとの面は鏡面に比べると粗いため、依然としてパーティクルの発生原因になるおそれがある。
　本発明はこのような課題を解決するためになされたものであり、半導体プロセスにおいてパーティクルの発生を防止することを主目的とする。
　本発明のウエハ載置台は、
　セラミック焼結体の表面にウエハを支持する複数の凸部を備えたウエハ載置台であって、
　前記セラミック焼結体の前記表面のうち前記凸部のない部分は、表面粗さＲａが０．１μｍ以下の鏡面であり、
　前記凸部は、前記セラミック焼結体と同じ材質のエアロゾルデポジション（ＡＤ）膜又は溶射膜である、
　ものである。
　このウエハ載置台は、例えば、セラミック焼結体の表面を鏡面仕上げしたあと凸部を形成したい箇所にＡＤ膜又は溶射膜を形成することにより得られる。このウエハ載置台のセラミック焼結体の表面のうち凸部のない部分は鏡面のため、パーティクルの発生原因になることはない。したがって、このウエハ載置台によれば、半導体プロセスにおいてパーティクルの発生を防止することができる。
　本発明のウエハ載置台において、前記凸部は、角（頂面と側面との境界）が丸みを帯びていてもよい。こうすれば、凸部の角が機械的外力に対する応力集中箇所になり難い。
　本発明のウエハ載置台において、前記凸部は、前記セラミック焼結体に比べて緻密性が低くてもよい。セラミック焼結体はホットプレス焼成などを採用することにより緻密なものにすることができる。一方、凸部はＡＤ膜又は溶射膜のためセラミック焼結体に比べて緻密性が低くなる。
　本発明のウエハ載置台の製法は、
（ａ）セラミック焼結体の表面を鏡面仕上げする工程と、
（ｂ）前記表面のうち凸部を形成したい部分にＡＤ法又は溶射法により凸部を形成する工程と、
　を含むものである。
　このウエハ載置台の製法によれば、上述した本発明のウエハ載置台を比較的容易に作製することができる。
本実施形態のウエハ載置台の製造工程図。 従来のウエハ載置台の製造工程図。
　本発明の好適な実施形態を、図面を参照しながら以下に説明する。図１は本実施形態のウエハ載置台の製造工程図（縦断面図）である。
　ウエハ載置台は、円板状のセラミック焼結体の表面にウエハを支持する複数の凸部を備えたものである。セラミック焼結体の表面のうち凸部のない部分は、表面粗さＲａが０．１μｍ以下の鏡面である。凸部は、セラミック焼結体と同じ材質のＡＤ膜又は溶射膜である。凸部の角（頂面と側面との境界）は、断面でみると丸みを帯びている。ウエハ載置台の断面をみると、凸部は、セラミック焼結体に比べて緻密性が低くなっている。セラミック焼結体は、ホットプレス焼成を採用することにより緻密質になっている。一方、凸部は、ＡＤ膜又は溶射膜のためセラミック焼結体に比べて緻密性が低くなっている（例えば気孔率が高くなっている）。セラミック焼結体は、静電電極、ＲＦ電極及びヒータ電極（抵抗発熱体）の少なくとも一つを内蔵していてもよい。凸部の頂面は研磨されていてもよい。
　ウエハ載置台の製法は、（ａ）セラミック焼結体の表面を鏡面仕上げする工程と、（ｂ）その表面のうち凸部を形成したい部分にＡＤ法（プラズマＡＤ法を含む）又は溶射法により凸部を形成する工程と、を含む。工程（ｂ）では、表面のうち凸部を形成したい部分のみが露出するよう表面をマスクで覆い、露出した箇所にＡＤ法又は溶射法で凸部を形成してもよい。ＡＤ法は、衝撃固化現象でセラミック粒子を成膜することができるため、セラミック粒子を高温で焼結する必要がない。複数の凸部の頂面にウエハを載置した際に凸部とウエハとが擦れることや、半導体プロセスを行う際にプラズマに曝されることで凸部から脱粒するおそれがあることを考慮すると、凸部は溶射膜で形成するよりもＡＤ膜で形成するのが好ましい。ＡＤ膜の方が、相対的に緻密で且つ表面との密着性が高いからである。溶射法で凸部を形成する場合には、密着性を挙げるために凸部を形成したい部分を荒らしておくことが好ましい。
　以上説明した本実施形態のウエハ載置台によれば、セラミック焼結体の表面のうち凸部のない部分は鏡面のため、パーティクルの発生原因になることはない。したがって、このウエハ載置台によれば、半導体プロセスにおいてパーティクルの発生を防止することができる。
　また、凸部の角は、丸みを帯びているため、機械的外力に対する応力集中箇所になり難い。
  本出願は、２０１９年６月２８日に出願された日本国特許出願第２０１９－１２１４８７号を優先権主張の基礎としており、引用によりその内容の全てが本明細書に含まれる。
　本発明は、例えば半導体ウエハの搬送、露光、ＣＶＤなどの成膜プロセスや、洗浄、エッチング、ダイシングなどの微細加工に利用可能である。

Claims (4)

  1. 　セラミック焼結体の表面にウエハを支持する複数の凸部を備えたウエハ載置台であって、
    　前記セラミック焼結体の前記表面のうち前記凸部のない部分は、表面粗さＲａが０．１μｍ以下の鏡面であり、
    　前記凸部は、前記セラミック焼結体と同じ材質のエアロゾルデポジション膜又は溶射膜である、
    　ウエハ載置台。
  2. 　前記凸部は、角が丸みを帯びている、
    　請求項１に記載のウエハ載置台。
  3. 　前記凸部は、前記セラミック焼結体に比べて緻密性が低い、
    　請求項１又は２に記載のウエハ載置台。
  4. （ａ）セラミック焼結体の表面を鏡面仕上げする工程と、
    （ｂ）前記表面のうち凸部を形成したい部分にエアロゾルデポジション法又は溶射法により凸部を形成する工程と、
    　を含むウエハ載置台の製法。
PCT/JP2020/022830 2019-06-28 2020-06-10 ウエハ載置台及びその製法 Ceased WO2020261990A1 (ja)

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Application Number Priority Date Filing Date Title
KR1020217040469A KR102672383B1 (ko) 2019-06-28 2020-06-10 웨이퍼 배치대 및 그 제법
CN202080047761.6A CN114072901A (zh) 2019-06-28 2020-06-10 晶片载置台及其制法
JP2021528133A JP7284261B2 (ja) 2019-06-28 2020-06-10 ウエハ載置台及びその製法
US17/643,600 US12087613B2 (en) 2019-06-28 2021-12-10 Wafer placement table and method of manufacturing the same

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