WO2020241346A1 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
WO2020241346A1
WO2020241346A1 PCT/JP2020/019610 JP2020019610W WO2020241346A1 WO 2020241346 A1 WO2020241346 A1 WO 2020241346A1 JP 2020019610 W JP2020019610 W JP 2020019610W WO 2020241346 A1 WO2020241346 A1 WO 2020241346A1
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Prior art keywords
layer
conductive
bonding
bonding layer
semiconductor device
Prior art date
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PCT/JP2020/019610
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English (en)
French (fr)
Inventor
小鵬 呉
拓一 大塚
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ローム株式会社
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Publication date
Application filed by ローム株式会社 filed Critical ローム株式会社
Priority to DE112020002520.9T priority Critical patent/DE112020002520T5/de
Priority to US17/609,739 priority patent/US20220181310A1/en
Priority to CN202080037873.3A priority patent/CN113874991A/zh
Priority to JP2021522233A priority patent/JP7443359B2/ja
Publication of WO2020241346A1 publication Critical patent/WO2020241346A1/ja
Priority to JP2024024424A priority patent/JP2024056982A/ja

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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19105—Disposition of discrete passive components in a side-by-side arrangement on a common die mounting substrate

Definitions

  • the present disclosure relates to a semiconductor device including a semiconductor element.
  • Patent Document 1 discloses an example of such a semiconductor device.
  • a metal pattern (conductive portion) is formed on a support substrate (insulating substrate).
  • the semiconductor element is bonded to the metal pattern via a conductive bonding material.
  • one object of the present disclosure is to provide a semiconductor device suitable for improving the reliability of the bonded state by maintaining an appropriate bonded state between the semiconductor element and the conductive portion. And.
  • the semiconductor device is interposed between a conductive portion having a main surface, a semiconductor element mounted on the main surface, and the conductive portion and the semiconductor element, and the conductive portion.
  • the conductive bonding material includes a metal base layer, a first bonding layer, and a second bonding layer, and the first bonding layer includes a conductive bonding material for conducting conduction bonding between the semiconductor element and the semiconductor element.
  • the second bonding layer is interposed between the metal base layer and the conductive portion. However, it is bonded to the conductive portion by solid-phase diffusion of the metal.
  • FIG. 6 is an enlarged view of part A in FIG. It is the B part enlarged view of FIG.
  • FIG. 6 is an enlarged view of part C in FIG.
  • FIG. 6 is an enlarged view of part D in FIG. It is a figure for demonstrating the joining method of a semiconductor element and a conductive part. It is a top view which shows the semiconductor device which concerns on 2nd Embodiment.
  • FIG. 16 is an enlarged view of part A in FIG.
  • FIG. 16 is an enlarged view of part B in FIG.
  • FIG. 16 is an enlarged view of part C in FIG.
  • FIG. 16 is an enlarged view of part D in FIG.
  • FIG. 2 is a cross-sectional view taken along the line XXII-XXII of FIG.
  • It is a partially enlarged view of FIG.
  • FIG. 23 It is an enlarged view of the part A of FIG.
  • part B of FIG. is the C part enlarged view of FIG.
  • It is an enlarged view of part D of FIG.
  • the semiconductor device A10 includes a support substrate 10, a plurality of conductive portions 20, a first input terminal 31, a second input terminal 32, a first output terminal 33, a second output terminal 34, a plurality of semiconductor elements 40, and a seal.
  • a stop resin 80 (omitted in FIG. 1) is provided.
  • the semiconductor device A10 includes a pair of insulating layers 26, a pair of gate wiring layers 271, a pair of detection wiring layers 272, a pair of gate terminals 35, and a pair of detection terminals 36.
  • Each semiconductor element 40 is, for example, a MOSFET, and the semiconductor device A10 is, for example, a power conversion device (power module).
  • the semiconductor device A10 is used as a drive source for a motor, an inverter device for various electric appliances, a DC / DC converter, and the like.
  • the sealing resin 80 is transmitted and shown (see the alternate long and short dash line).
  • the direction extending through the thickness of the support substrate 10 (or the conductive portion 20) is defined as the “direction z” (sometimes referred to as the “thickness direction”). is there).
  • One direction orthogonal to the direction z is referred to as "direction x”
  • a direction orthogonal to both the direction z and the direction x is referred to as "direction y”.
  • the semiconductor device A10 has a rectangular shape when viewed in the direction z (in other words, in a plan view).
  • the direction x is parallel to one side of the semiconductor device A10 (for example, the left side in FIG.
  • the direction y is parallel to another side of the semiconductor device A10 (for example, the lower side in FIG. 2).
  • the member A when there are two members A and B (or two groups A and B) that are spaced apart from each other in any direction, "the member A is in that direction (with respect to the member B). It may be described as "on one side” or “member B is on the other side (with respect to member A) in that direction”.
  • the first input terminal 31 and the second input terminal 32 are arranged on one side of the direction x, and the first output terminal 33 and the second output terminal 34 are in the direction. It is located on the other side of x.
  • “one side” and “the other side” may be the reverse of this example.
  • the support substrate 10 supports a plurality of conductive portions 20.
  • the support substrate 10 has a square shape when viewed in the direction z.
  • the support substrate 10 has a support surface 10A and a bottom surface 10B that face each other (separate from each other) in the direction z.
  • the support surface 10A faces each conductive portion 20.
  • the bottom surface 10B is exposed from the sealing resin 80.
  • the support substrate 10 includes a first support plate 11, a second support plate 12, and a bottom plate 13.
  • the first support plate 11 is located between the second support plate 12 and the bottom plate 13 in the direction z.
  • the first support plate 11 has electrical insulation.
  • the constituent material of the first support plate 11 is ceramics having excellent thermal conductivity. Examples of the ceramics include aluminum nitride (AlN).
  • Each second support plate 12 is laminated on the first support plate 11 and has a support surface 10A.
  • One corresponding conductive portion 20 is joined to the second support plate 12.
  • the second support plate 12 is made of metal and is made of, for example, a metal foil.
  • the second support plate 12 is made of copper (Cu) or a copper alloy and has conductivity.
  • the second support plate 12 has three regions (support plates) of a first region 121, a second region 122, and a third region 123. These three regions are separated from each other.
  • the bottom plate 13 is laminated on the first support plate 11 on the side opposite to the second support plate 12.
  • the bottom plate 13 includes a bottom surface 10B.
  • the bottom plate 13 is made of metal like the second support plate 12, and is made of, for example, a metal foil made of copper or a copper alloy.
  • the second support plate 12 has conductivity.
  • the area of the bottom plate 13 is smaller than the area of the first support plate 11 when viewed in the direction z.
  • the peripheral edge of the first support plate 11 is located outside the peripheral edge of the bottom plate 13.
  • the support substrate 10 is provided with a recess 13A surrounding the bottom plate 13 when viewed in the direction z.
  • the recess 13A is covered with the sealing resin 80.
  • the support substrate 10 can be formed by using, for example, a DBC (Direct Bonded Copper) substrate.
  • the DBC substrate is composed of a ceramic plate and a pair of copper foils sandwiching the ceramic plate from both sides in the direction z.
  • the ceramic plate becomes the first support plate 11.
  • the second support plate 12 and the bottom plate 13 are formed by partially removing the pair of copper foils by etching, respectively.
  • the joining member 19 is provided so as to cover the support surface 10A of each of the first region 121, the second region 122, and the third region 123. That is, each joining member 19 covers at least a part of the support surface 10A of the support substrate 10.
  • each conductive portion 20 is joined to one corresponding second support plate 12 via a joining member 19.
  • the plurality of conductive portions 20 together with the first input terminal 31, the second input terminal 32, the first output terminal 33, and the second output terminal 34 form a predetermined conductive path in the semiconductor device A10.
  • Each conductive portion 20 has a main surface 20A and a back surface 20B facing opposite sides in the direction z, and the back surface 20B faces the support surface 10A of the support substrate 10.
  • the conductive portion 20 is composed of, for example, a metal plate.
  • the metal plate is made of, for example, copper or a copper alloy.
  • the thickness of the conductive portion 20 is larger than the thickness of the second support plate 12.
  • the conductive portion 20 may have a structure in which, for example, silver plating or a plurality of types of metal plating in which an aluminum layer, a nickel (Ni) layer, and a silver layer are laminated in this order are applied to the surface of the metal plate. Details will be described later (see FIGS. 9 and 10), but in the present embodiment, the conductive portion 20 includes a metal base material 24 and a conductor layer 25 formed on the base material 24. ..
  • the plurality of conductive portions 20 include the first conductive portion 201, the second conductive portion 202, and the third conductive portion 203.
  • the first conductive portion 201 is joined to the first region 121 of the second support plate 12.
  • the second conductive portion 202 is joined to the second region 122 of the second support plate 12.
  • the third conductive portion 203 is joined to the third region 123 of the second support plate 12. Therefore, the first conductive portion 201, the second conductive portion 202, and the third conductive portion 203 are separated from each other.
  • a pair of insulating layers 26 are arranged on the main surfaces 20A of each of the first conductive portion 201 and the second conductive portion 202.
  • the pair of insulating layers 26 are separated from each other in the direction y.
  • the pair of insulating layers 26 have a strip shape extending in the direction x.
  • the constituent material of the insulating layer 26 is, for example, ceramics or glass epoxy resin. Further, the insulating layer 26 may be formed of at least an insulating SiC or the like on its surface.
  • a pair of gate wiring layers 271 are separately arranged on the pair of insulating layers 26.
  • the pair of gate wiring layers 271 have a strip shape extending in the direction x.
  • the pair of detection wiring layers 272 are separately arranged on the pair of insulating layers 26.
  • the pair of detection wiring layers 272 have a strip shape extending in the direction x.
  • the gate wiring layer 271 and the detection wiring layer 272 are arranged side by side on each of the insulating layers 26.
  • the gate wiring layer 271 and the detection wiring layer 272 are made of, for example, a metal foil made of copper or a copper alloy.
  • the first input terminal 31 and the second input terminal 32 are located on one side of the direction x.
  • the first input terminal 31 and the second input terminal 32 are separated from each other in the direction y.
  • DC power (voltage) to be converted into power is input to the first input terminal 31 and the second input terminal 32.
  • the first input terminal 31 is a positive electrode (P terminal).
  • the second input terminal 32 is a negative electrode (N terminal).
  • the first input terminal 31 and the second input terminal 32 are made of a metal plate.
  • the constituent material of the metal plate is copper or a copper alloy.
  • a bent portion 311 formed in a stepped shape is provided at the other end of the first input terminal 31 in the direction x.
  • the bent portion 311 is connected to the main surface 20A of the first conductive portion 201 by solder bonding, ultrasonic bonding, or the like.
  • the first input terminal 31 is electrically connected to the first conductive portion 201.
  • a bent portion 321 formed in a stepped shape is provided at the end on the other side of the second input terminal 32 in the direction x.
  • the bent portion 321 is connected to the main surface 20A of the third conductive portion 203 by solder bonding, ultrasonic bonding, or the like.
  • the second input terminal 32 is electrically connected to the third conductive portion 203.
  • the first output terminal 33 and the second output terminal 34 are located on the other side of the direction x.
  • the first output terminal 33 and the second output terminal 34 are separated from each other in the direction y.
  • AC power (voltage) converted by a plurality of semiconductor elements 40 is output from the first output terminal 33 and the second output terminal 34.
  • the first output terminal 33 and the second output terminal 34 are made of a metal plate.
  • the constituent material of the metal plate is copper or a copper alloy.
  • a bent portion 331 and a bent portion 341 formed to be bent in a stepped manner are provided at one end of the direction x of the first output terminal 33 and the second output terminal 34.
  • the bent portion 331 and the bent portion 341 are connected to the main surface 20A of the second conductive portion 202 by solder bonding, ultrasonic bonding, or the like.
  • the first output terminal 33 and the second output terminal 34 are electrically connected to the second conductive portion 202.
  • the configuration is provided with two output terminals (first output terminal 33 and second output terminal 34), but these may be collectively provided with one output terminal.
  • the pair of gate terminals 35 and the pair of detection terminals 36 are arranged corresponding to the pair of gate wiring layers 271 and the pair of detection wiring layers 272, respectively.
  • the pair of gate terminals 35 and the pair of detection terminals 36 are made of a metal plate, and each of them extends in the direction y.
  • the constituent material of the metal plate is copper or a copper alloy.
  • Each end of the pair of gate terminals 35 and the pair of detection terminals 36 is bent in a stepped shape.
  • the ends of each gate terminal 35 are connected to the corresponding gate wiring layer 271 by solder bonding, ultrasonic bonding, or the like.
  • the ends of each detection terminal 36 are connected to the corresponding detection wiring layer 272 by solder bonding, ultrasonic bonding, or the like.
  • the semiconductor element 40 is, for example, a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) configured by using a semiconductor material mainly composed of silicon carbide (SiC).
  • the semiconductor element 40 is not limited to a MOSFET, and may be a field effect transistor including a MISFET (Metal-Insulator-Semiconductor Field-Effect Transistor) or a bipolar transistor such as an IGBT (Insulated Gate Bipolar Transistor).
  • MISFET Metal-Insulator-Semiconductor Field-Effect Transistor
  • IGBT Insulated Gate Bipolar Transistor
  • the semiconductor element 40 has an element main body 41, a main surface electrode 42, a back surface electrode 43, and a gate electrode (not shown).
  • the element main body 41 has an element main surface 411 and an element back surface 412.
  • the element main surface 411 and the element back surface 412 face opposite to each other in the direction z.
  • the element main surface 411 faces the same side as the main surface 20A of the conductive portion 20 in the direction z. Therefore, the back surface 412 of the element faces the main surface 20A.
  • the main surface electrode 42 is provided on the element main surface 411.
  • a source current flows through the main surface electrode 42 from the inside of the element body 41.
  • the back surface electrode 43 is provided on the back surface 412 of the element.
  • the back surface electrode 43 has a structure in which a plurality of types of metal layers such as silver, nickel, and silver are laminated.
  • a drain current flows through the back electrode 43 toward the inside of the element body 41.
  • the back surface electrode 43 is electrically bonded to the main surface 20A of the conductive portion 20 by the conductive bonding material 49.
  • the gate electrode is provided on the element main surface 411, and a gate voltage for driving the semiconductor element 40 is applied to the gate electrode.
  • the conductive bonding material 49 is interposed between the conductive portion 20 and the semiconductor element 40.
  • the conductive bonding material 49 has a size larger than that of the semiconductor element 40 in the direction z, and the entire semiconductor element 40 overlaps with the conductive bonding material 49 in the direction z.
  • the conductive bonding material 49 has a structure in which a plurality of metal layers are laminated. As shown in FIGS. 5 and 6, in the semiconductor device A10, the conductive bonding material 49 includes a metal base layer 490, a first bonding layer 491, and a second bonding layer 492. As shown in FIGS. 7 to 10, the conductive bonding material 49 further includes a first intermediate layer 493 and a second intermediate layer 494.
  • the metal base layer 490 occupies most of the volume of the conductive bonding material 49.
  • the thickness of the metal base layer 490 is, for example, about 10 to 200 ⁇ m.
  • the constituent material of the metal base layer 490 contains, for example, at least one of aluminum (Al), titanium (Ti), zinc (Zn), hafnium (Hf) and erbium (Er).
  • the constituent material of the metal base layer 490 includes aluminum.
  • the Young's modulus of the metal base layer 490 is 70.3 GPa.
  • the first bonding layer 491 is interposed between the metal base layer 490 and the semiconductor element 40. In this embodiment, as shown in FIGS. 7 and 8, the first bonding layer 491 is formed on the first intermediate layer 493.
  • the constituent material of the first bonding layer 491 contains, for example, at least one of silver (Ag), copper (Cu) and gold (Au). In the present embodiment, the constituent material of the first bonding layer 491 contains silver.
  • the first bonding layer 491 is bonded to the semiconductor element 40 (back surface electrode 43) by solid phase diffusion of metal.
  • the constituent material of the back surface electrode 43 includes, for example, silver.
  • the thickness of the back surface electrode 43 is smaller than the thickness of the first bonding layer 491, and the back surface electrode 43 is formed by, for example, a sputtering method.
  • the second bonding layer 492 is interposed between the metal base layer 490 and the conductive portion 20.
  • the second bonding layer 492 is formed on the second intermediate layer 494.
  • the constituent material of the second bonding layer 492 includes, for example, at least one of silver, copper and gold.
  • the constituent material of the second bonding layer 492 contains silver.
  • the second bonding layer 492 is bonded to the conductive portion 20 (conductor layer 25) by solid phase diffusion of metal.
  • the conductive portion 20 includes a base material 24 and a conductor layer 25 formed on the base material 24, and the second bonding layer 492 and the conductor layer 25 are bonded by solid phase diffusion.
  • the constituent material of the conductor layer 25 includes, for example, silver.
  • each of the constituent materials of the first bonding layer 491 and the second bonding layer 492 is silver
  • the Young's modulus of each of the first bonding layer 491 and the second bonding layer 492 is 82.7 GPa. Therefore, as shown by the Young's modulus of the metal base layer 490 (70.3 GPa) described above, the Young's modulus of the metal base layer 490 is smaller than the Young's modulus of each of the first bonding layer 491 and the second bonding layer 492.
  • the thickness of each of the first bonding layer 491 and the second bonding layer 492 is, for example, about 2 to 5 ⁇ m, which is smaller than the thickness of the metal base layer 490.
  • the first intermediate layer 493 is interposed between the metal base layer 490 and the first bonding layer 491.
  • the first intermediate layer 493 is formed on the metal base layer 490.
  • the second intermediate layer 494 is interposed between the metal base layer 490 and the second bonding layer 492.
  • the second intermediate layer 494 is formed on the metal base layer 490.
  • Each constituent material of the first intermediate layer 493 and the second intermediate layer 494 contains, for example, nickel (Ni).
  • Ni nickel
  • the Young's modulus of each of the first intermediate layer 493 and the second intermediate layer 494 is 200 GPa.
  • the thickness of each of the first intermediate layer 493 and the second intermediate layer 494 is, for example, about 0.2 to 2 ⁇ m, which is smaller than the thickness of the first bonding layer 491 and the second bonding layer 492.
  • the laminated structure of the conductive bonding material 49 is formed by, for example, a sputtering method or a plating process.
  • the sputtering method for example, on both the front and back surfaces of the aluminum sheet material corresponding to the metal base layer 490, the first intermediate layer 493 and the first bonding layer 491, and the metal layer corresponding to the second intermediate layer 494 and the second bonding layer 492. Are sequentially formed.
  • the plating treatment the entire surface of the aluminum sheet material is plated with the constituent materials of the first intermediate layer 493 and the second intermediate layer 494 and the constituent materials of the first bonded layer 491 and the second bonded layer 492. Layers are formed sequentially.
  • the conductive bonding material 49 and the semiconductor element 40 are stacked on the main surface 20A of the conductive portion 20. At this time, the conductive portion 20 (conductor layer 25) and the second bonding layer 492, and the first bonding layer 491 and the semiconductor element 40 (back surface electrode 43) are in contact with each other.
  • the conductive portion 20 (conductor layer 25) and the second bonding layer 492, and the first bonding layer 491 and the semiconductor element 40 (back surface electrode 43) are bonded to each other by solid phase diffusion.
  • Bonding by solid phase diffusion is performed under high temperature and high pressure.
  • bonding by solid phase diffusion is performed while pressing the semiconductor elements 40 stacked and arranged by a flat pressing member 9.
  • the temperature is about 350 ° C. and the pressure is about 40 MPa.
  • the temperature and pressure conditions for solid phase diffusion can be appropriately selected.
  • the solid phase diffusion bonding is assumed to be performed in the atmosphere, but may be performed in a vacuum.
  • the first bonding layer 491 and the back surface electrode 43 (semiconductor).
  • a gap 495 may occur at the interface with the element 40) and at the interface between the second bonding layer 492 and the conductor layer 25 (conductive portion 20).
  • the conductive bonding material 49 is slightly inside the boundary portion between the portion overlapping the semiconductor element 40 and the portion not overlapping (viewed in the direction z).
  • the boundary surface between the first bonding layer 491 and the back surface electrode 43 (semiconductor element 40), the second bonding layer 492, and the conductor layer 25 (conductive portion 20) The boundary surface of is difficult to see. This is because the constituent materials of the first bonding layer 491 and the back surface electrode 43, and the second bonding layer 492 and the conductor layer 25 are all silver and are solid-phase diffusion bonding of the same metal.
  • the boundary surface between the first bonding layer 491 and the back surface electrode 43 (semiconductor element 40) and the boundary surface between the second bonding layer 492 and the conductor layer 25 (conductive portion 20) are schematically shown.
  • the first bonding layer 491 and the back surface electrode 43, and the second bonding layer 492 and the conductor layer 25 are each firmly bonded by solid phase diffusion.
  • the strong bonding state due to solid phase diffusion can be confirmed, for example, by an enlarged photograph (for example, SEM photograph) of the cross section of the bonding portion.
  • the plurality of semiconductor elements 40 include a plurality of first elements 401 and a plurality of second elements 402. As shown in FIGS. 1, 2 and 4, the plurality of first elements 401 are electrically joined to the main surface 20A of the first conductive portion 201. The plurality of first elements 401 are arranged at predetermined intervals along the direction x. The plurality of first elements 401 form an upper arm circuit of the semiconductor device A10.
  • the plurality of second elements 402 are electrically joined to the main surface 20A of the second conductive portion 202.
  • the plurality of second elements 402 are arranged at predetermined intervals along the direction x.
  • the plurality of second elements 402 form a lower arm circuit of the semiconductor device A10.
  • the plurality of first elements 401 are provided in a state of being displaced along the direction x with respect to the plurality of second elements 402.
  • three first elements 401 and three second elements 402 are provided.
  • the number of each of the first element 401 and the second element 402 is not limited to this configuration, and can be freely set according to, for example, the performance required for the semiconductor device A10.
  • Each of the main surface electrodes 42 of the plurality of first elements 401 and the main surface 20A of the second conductive portion 202 are connected via, for example, a wire 70a (for simplification, one wire in FIG. 2). Only 70a is shown).
  • a wire 70a for simplification, one wire in FIG. 2. Only 70a is shown).
  • each of the main surface electrodes 42 of the plurality of first elements 401 is conducted to the second conductive portion 202 via the wire. Therefore, the first output terminal 33 is conductive to each main surface electrode 42 of the plurality of first elements 401 via the second conductive portion 202 and the wire.
  • the first output terminal 33 corresponds to the source terminals of the plurality of first elements 401.
  • Each of the back surface electrodes 43 of the plurality of first elements 401 and the first conductive portion 201 are conductive via the conductive bonding material 49. Therefore, the first input terminal 31 is electrically connected to each back electrode 43 of the plurality of first elements 401 via the first conductive portion 201. The first input terminal 31 corresponds to the drain terminals of the plurality of first elements 401.
  • Each of the main surface electrodes 42 of the plurality of second elements 402 and the main surface 20A of the third conductive portion 203 are connected via, for example, a wire 70b (for simplification, one wire in FIG. 2). Only 70b is shown).
  • each of the main surface electrodes 42 of the plurality of second elements 402 is conducted to the third conductive portion 203 via the wire. Therefore, the second input terminal 32 is conductive to each main surface electrode 42 of the plurality of second elements 402 via the third conductive portion 203 and the wire.
  • the second input terminal 32 corresponds to the source terminal of the plurality of second elements 402.
  • Each of the back surface electrodes 43 of the plurality of second elements 402 and the second conductive portion 202 are conducting with each other via the conductive bonding material 49. Therefore, the second output terminal 34 is conductive to each back electrode 43 of the plurality of second elements 402 via the second conductive portion 202.
  • the second output terminal 34 corresponds to a drain terminal of a plurality of second elements 402.
  • the semiconductor device A10 includes a gate wire and a detection wire (not shown).
  • a plurality of the gate wires are provided corresponding to each of the plurality of first elements 401 and the plurality of second elements 402.
  • Each gate wire corresponding to the first element 401 is connected to a gate electrode (not shown) of the first element 401 and one gate wiring layer 271 located above the first conductive portion 201.
  • Each gate wire corresponding to the second element 402 is connected to a gate electrode (not shown) of the second element 402 and the other gate wiring layer 271 located on the second conductive portion 202.
  • a gate voltage for driving either the plurality of first elements 401 and the plurality of second elements 402 is applied to each of the pair of gate terminals 35 connected to the pair of gate wiring layers 271.
  • a plurality of the detection wires are provided corresponding to each of the plurality of first elements 401 and the plurality of second elements 402.
  • Each detection wire corresponding to the first element 401 is connected to the main surface electrode 42 of the first element 401 and one detection wiring layer 272 located on the first conductive portion 201.
  • Each detection wire corresponding to the second element 402 is connected to the main surface electrode 42 of the second element 402 and the other detection wiring layer 272 located on the second conductive portion 202.
  • each of the pair of detection terminals 36 connected to the pair of detection wiring layers 272 is applied to the plurality of main surface electrodes 42 corresponding to either the plurality of first elements 401 and the plurality of second elements 402.
  • a voltage (voltage corresponding to the source current) is applied.
  • the sealing resin 80 includes a part of each of the support substrate 10, the first input terminal 31, the second input terminal 32, the first output terminal 33, and the second output terminal 34. It covers the conductive portion 20 and the plurality of semiconductor elements 40.
  • the sealing resin 80 covers the pair of insulating layers 26, the pair of gate wiring layers 271, the pair of detection wiring layers 272, and the wires. Further, the sealing resin 80 covers a part of each of the pair of gate terminals 35 and the pair of detection terminals 36.
  • the constituent material of the sealing resin 80 is, for example, a black epoxy resin.
  • the sealing resin 80 has a resin main surface 81 and a resin bottom surface 82.
  • the resin main surface 81 faces the same side as the support surface 10A of the support substrate 10 in the direction z.
  • the resin bottom surface 82 faces the side opposite to the resin main surface 81 in the direction z.
  • the bottom surface 10B of the bottom plate 13 (supporting substrate 10) is exposed from the resin bottom surface 82.
  • the resin bottom surface 82 has a frame shape surrounding the bottom plate 13. The portions of the pair of gate terminals 35 and the pair of detection terminals 36 exposed from the sealing resin 80 are appropriately bent according to the usage pattern of the semiconductor device A10.
  • the conductive bonding material 49 interposed between the conductive portion 20 and the semiconductor element 40 includes a metal base layer 490, a first bonding layer 491, and a second bonding layer 492, and the metal base layer 490 is the first bonding. It is interposed between the layer 491 and the second bonding layer 492. According to such a configuration, when the first bonding layer 491 and the semiconductor element 40 (back surface electrode 43) are bonded, and the second bonding layer 492 and the conductive portion 20 (conductor layer 25) are bonded, an intermediate is formed.
  • the metal base layer 490 of the above functions as a cushion.
  • the pressing force acting on the boundary between the first bonding layer 491 and the semiconductor element 40 (back surface electrode 43) and the boundary between the second bonding layer 492 and the conductive portion 20 (conductor layer 25) is made uniform.
  • the first bonding layer 491 and the semiconductor element 40 (back surface electrode 43), and the second bonding layer 492 and the conductive portion 20 (conductor layer 25) are firmly bonded by solid-phase diffusion bonding, respectively.
  • the semiconductor device A10 including the conductive bonding material 49 it is possible to improve the reliability of the bonding state between the semiconductor element 40 and the conductive portion 20.
  • the Young's modulus of the metal base layer 490 is smaller than the Young's modulus of each constituent material of the first bonding layer 491 and the second bonding layer 492. According to such a configuration, when the conductive bonding material 49 is bonded to the semiconductor element 40 (back surface electrode 43) and the conductive portion 20 (conductor layer 25) by solid phase diffusion, stress is exerted by the relatively soft metal base layer 490. Is relaxed, and the joint boundary can be smoothed. As a result, the first bonding layer 491 and the semiconductor element 40 (back surface electrode 43), and the second bonding layer 492 and the conductive portion 20 (conductor layer 25) are more firmly bonded by solid phase diffusion.
  • the thickness of the metal base layer 490 is larger than the thickness of each of the first bonding layer 491 and the second bonding layer 492.
  • the boundary between the first bonding layer 491 and the semiconductor element 40 (back surface electrode 43) and the boundary between the second bonding layer 492 and the conductive portion 20 (conductor layer 25) are formed.
  • the pressing force acting becomes more uniform. Therefore, the first bonding layer 491 and the semiconductor element 40 (back surface electrode 43), and the second bonding layer 492 and the conductive portion 20 (conductor layer 25) can each be in a stronger conductive bonding state.
  • the conductive bonding material 49 includes a first intermediate layer 493 and a second intermediate layer 494.
  • the first intermediate layer 493 is interposed between the metal base layer 490 and the first bonding layer 491
  • the second intermediate layer 494 is interposed between the metal base layer 490 and the second bonding layer 492.
  • the configuration having the first intermediate layer 493 and the second intermediate layer 494 is conductive with the boundary portion between the first bonding layer 491 and the semiconductor element 40 (back surface electrode 43) and the second bonding layer 492 during bonding by solid phase diffusion. It is suitable for equalizing the pressing force acting on each of the boundary portions of the portions 20 (conductor layer 25).
  • the Young's modulus of the first intermediate layer 493 and the second intermediate layer 494 is relatively large. In this case, the pressing force acting on the bonding boundary portion during solid-phase diffusion bonding becomes more uniform, and the first bonding layer 491 and the semiconductor element 40 (back surface electrode 43), and the second bonding layer 492 and the conductive portion 20 ( The conductor layer 25) can be in a stronger conductive joint state.
  • each constituent material of the first bonding layer 491 and the second bonding layer 492 contains silver. According to such a configuration, when bonding by solid phase diffusion using the conductive bonding material 49, oxidation of the first bonding layer 491 and the second bonding layer 492 is suppressed, and good solid phase diffusion bonding is possible. Become. Further, since each of the back surface electrode 43 and the conductor layer 25 bonded to the first bonding layer 491 and the second bonding layer 492 also contains silver, better solid phase diffusion bonding is possible.
  • the above-mentioned conductive joining material is not particularly limited. It may have the same configuration as 49.
  • the joining member 19 has, for example, a structure in which a plurality of metal layers are laminated, and includes a plurality of metal layers joined by solid phase diffusion.
  • the bonding member 19 may include a metal base layer, a first bonding layer, a second bonding layer, a first intermediate layer, and a second intermediate layer, similarly to the conductive bonding material 49.
  • the specific configurations of the metal base layer, the first bonding layer, the second bonding layer, the first intermediate layer and the second intermediate layer are as follows: the metal base layer 490, the first bonding layer 491, and the second bonding layer 492 in the conductive bonding material 49. , 1st intermediate layer 493 and 2nd intermediate layer 494, respectively.
  • the first bonding layer of the bonding member 19 is bonded to the conductive portion 20 by solid-phase diffusion of metal
  • the second bonding layer of the bonding member 19 is supported by solid-phase diffusion of metal to support substrate 10 (second support plate 12). Is joined to.
  • the semiconductor device A20 according to the second embodiment will be described with reference to FIGS. 12 to 20.
  • the illustrated semiconductor device A20 includes a support member 1, a conductive portion 2, a semiconductor laser element 4, a switching element 5, a capacitor 6, a first wire 71, a second wire 72, a third wire 73, and a translucent resin 8.
  • the semiconductor device A20 is used, for example, as a pulsed laser light source of LiDAR, which is an example of two-dimensional distance measurement, but the present disclosure is not limited thereto.
  • the semiconductor device A20 has a rectangular shape when viewed in the direction z.
  • the translucent resin 8 is omitted.
  • reference numerals 84 to 87 in parentheses indicate four side surfaces of the translucent resin 8 (resin first surface, resin second surface, resin third surface, and resin fourth surface, which will be described later), respectively.
  • the support member 1 supports the semiconductor laser element 4 and the switching element 5 via the conductive portion 2.
  • the support member 1 is made of an insulating material.
  • the material of the support member 1 is not particularly limited, and examples thereof include an epoxy resin and a glass epoxy resin. In the following description, a case where the support member 1 is made of ceramics will be described as an example.
  • the support member 1 has a support surface 1A, a bottom surface 1B, a first surface 14, a second surface 15, a third surface 16 and a fourth surface 17, and is, for example, rectangular in the direction z. The shape.
  • the support surface 1A is a surface facing one side in the direction z, and is a flat surface in the illustrated example.
  • the bottom surface 1B is a surface facing the other side in the direction z opposite to the support surface 1A, and is a flat surface in the illustrated example.
  • the first surface 14 is a surface facing the direction x one side, and is a plane in the illustrated example.
  • the second surface 15 is a surface facing the direction opposite to the first surface 14 x the other side, and is a plane in the illustrated example.
  • the third surface 16 is a surface facing one side in the direction y, and is a plane in the illustrated example.
  • the fourth surface 17 is a surface facing the direction opposite to the third surface 16 x the other side, and is a plane in the illustrated example.
  • the conductive portion 2 is a portion that constitutes a conduction path to the semiconductor laser element 4, the switching element 5, and the like.
  • the material of the conductive portion 2 is not particularly limited, and examples thereof include metals such as copper (Cu), nickel (Ni), titanium (Ti), and gold (Au).
  • the method for forming the conductive portion 2 is not particularly limited, and in the illustrated example, it is formed by plating, for example.
  • the illustrated conductive portion 2 includes a main surface portion 21, a bottom surface portion 22, and a connecting portion 23.
  • the main surface portion 21 is arranged on the support surface 1A of the support member 1.
  • the main surface portion 21 has a thin plate shape with the direction z as the thickness direction.
  • the main surface portion 21 includes a plurality of portions, and in the illustrated example, includes a first main surface portion 211, a second main surface portion 212, a third main surface portion 213, and a fourth main surface portion 214.
  • the first main surface portion 211 is arranged on the fourth surface 17 side in the direction y of the support member 1.
  • the first main surface portion 211 has a main surface 211A facing one side in the direction z.
  • the shape of the first main surface portion 211 is not particularly limited, but in the illustrated example, the convex portion 211B is combined with a long rectangle having the direction x as the longitudinal direction.
  • the convex portion 211B is a portion where the portion of the first main surface portion 211 on the third surface 16 side in the direction y protrudes toward the third surface 16 side in the direction y.
  • the convex portion 211B is located in the direction x center of the first main surface portion 211.
  • the first main surface portion 211 is separated from the first surface 14, the second surface 15, and the fourth surface 17.
  • the second main surface portion 212 is arranged closer to the third surface 16 in the direction y than the first main surface portion 211.
  • the second main surface portion 212 has a main surface 212A facing one side in the direction z.
  • the direction x dimension of the second main surface portion 212 is substantially the same as the direction x dimension of the first main surface portion 211.
  • the direction y dimension of the second main surface portion 212 is larger than the direction y dimension of the first main surface portion 211.
  • the second main surface portion 212 overlaps with the first main surface portion 211 when viewed in the direction y.
  • the shape of the second main surface portion 212 is not particularly limited, but in the illustrated example, a part of the rectangular shape is recessed.
  • the second main surface portion 212 has a recess 212B.
  • the recess 212B is a portion where the portion of the second main surface portion 212 on the fourth surface 17 side in the direction y is recessed toward the third surface 16 side in the direction y.
  • the recess 212B is located in the direction x center of the second main surface portion 212. Further, the concave portion 212B overlaps with the convex portion 211B when viewed in the direction y.
  • the area of the second main surface portion 212 is larger than that of the first main surface portion 211, the third main surface portion 213, and the fourth main surface portion 214.
  • the second main surface portion 212 is separated from the first surface 14 and the second surface 15.
  • the third main surface portion 213 is arranged closer to the third surface 16 in the direction y than the second main surface portion 212.
  • the third main surface portion 213 is arranged on the first surface 14 side in the direction x of the support member 1 and on the third surface 16 side in the direction y.
  • the third main surface portion 213 has a main surface 213A facing one side in the direction z.
  • the shape of the third main surface portion 213 is not particularly limited, and in the illustrated example, it is an elongated rectangular shape having the direction x as the longitudinal direction.
  • the illustrated third main surface portion 213 is separated from the first surface 14 and the third surface 16.
  • the fourth main surface portion 214 is located closer to the second surface 15 in the direction x with respect to the third main surface portion 213, and the third surface portion 214 in the direction y with respect to the second main surface portion 212. It is located closer to 16.
  • the fourth main surface portion 214 has a main surface 214A facing one side in the direction z.
  • the shape of the fourth main surface portion 214 is not particularly limited, and in the illustrated example, it is rectangular.
  • the direction y dimension of the fourth main surface portion 214 is substantially the same as the direction y dimension of the third main surface portion 213.
  • the direction x dimension of the fourth main surface portion 214 is smaller than the direction x dimension of the third main surface portion 213.
  • the area of the fourth main surface portion 214 is smaller than the area of the third main surface portion 213.
  • the fourth main surface portion 214 overlaps with the third main surface portion 213 when viewed in the direction x. Further, the fourth main surface portion 214 overlaps with the first main surface portion 211 and the second main surface portion 212 when viewed in the direction y.
  • the illustrated fourth main surface portion 214 is separated from the second surface 15 and the third surface 16.
  • the bottom surface portion 22 is arranged on the bottom surface 1B of the support member 1.
  • the bottom surface portion 22 includes a first bottom surface portion 221, a second bottom surface portion 222, a third bottom surface portion 223, and a fourth bottom surface portion 224.
  • the bottom surface portion 22 is used as a mounting terminal when mounting the semiconductor device A20 on a circuit board (not shown) or the like.
  • the first bottom surface portion 221 is arranged on the fourth surface 17 side in the direction y of the support member 1.
  • the shape of the first bottom surface portion 221 is not particularly limited, and in the illustrated example, it is an elongated rectangular shape having the direction x as the longitudinal direction.
  • the illustrated first bottom surface portion 221 is separated from the first surface 14, the second surface 15, and the fourth surface 17.
  • the second bottom surface portion 222 is arranged closer to the third surface 16 in the direction y than the first bottom surface portion 221.
  • the direction x dimension of the first bottom surface portion 221 is substantially the same as the direction x dimension of the first bottom surface portion 221.
  • the direction y dimension of the second bottom surface portion 222 is larger than the direction y dimension of the first bottom surface portion 221.
  • the second bottom surface portion 222 overlaps with the first bottom surface portion 221 when viewed in the direction y.
  • the shape of the second bottom surface portion 222 is not particularly limited, and in the illustrated example, it is rectangular.
  • the area of the second bottom surface portion 222 is larger than that of the first bottom surface portion 221 and the third bottom surface portion 223 and the fourth bottom surface portion 224.
  • the illustrated second bottom surface portion 222 is separated from the first surface 14 and the second surface 15.
  • the third bottom surface portion 223 is arranged closer to the third surface 16 in the direction y than the second bottom surface portion 222.
  • the third bottom surface portion 223 is arranged on the first surface 14 side in the direction x of the support member 1 and on the third surface 16 side in the direction y.
  • the shape of the third bottom surface portion 223 is not particularly limited, and in the illustrated example, it is an elongated rectangular shape having the direction x as the longitudinal direction.
  • the illustrated third bottom surface portion 223 is separated from the first surface 14 and the third surface 16.
  • the fourth bottom surface portion 224 is located closer to the second surface 15 in the direction x with respect to the third bottom surface portion 223, and is located on the third surface in the direction y with respect to the second bottom surface portion 222. It is located closer to 16.
  • the shape of the fourth bottom surface portion 224 is not particularly limited, and in the illustrated example, it is rectangular.
  • the direction y dimension of the fourth bottom surface portion 224 is substantially the same as the direction y dimension of the third bottom surface portion 223.
  • the direction x dimension of the fourth bottom surface portion 224 is smaller than the direction x dimension of the third bottom surface portion 223.
  • the area of the fourth bottom surface portion 224 is smaller than the area of the third bottom surface portion 223.
  • the fourth bottom surface portion 224 overlaps with the third bottom surface portion 223 when viewed in the direction x. Further, the fourth bottom surface portion 224 overlaps with the first bottom surface portion 221 and the second bottom surface portion 222 when viewed in the direction y. The illustrated fourth bottom surface portion 224 is separated from the second surface 15 and the third surface 16.
  • the contact portion 23 conducts each portion of the main surface portion 21 and each portion of the bottom surface portion 22.
  • the specific configuration of the communication unit 23 is not particularly limited, and in the illustrated example, as shown in FIGS. 12 and 13, the first communication unit 231, the plurality of second communication units 232, and the plurality of third communication units Includes 233 and 4th Liaison Unit 234.
  • the number of the first contact unit 231 and the second contact unit 232, the third contact unit 233, and the fourth contact unit 234 is not particularly limited.
  • the specific configurations of the first communication unit 231 and the second communication unit 232, the third communication unit 233, and the fourth communication unit 234 are not particularly limited, and in the present embodiment, as shown in FIGS. 12 to 14, the directions In the inner region of the support member 1 in z-view (the region separated from the first surface 14, the second surface 15, the third surface 16 and the fourth surface 17), the support member 1 penetrates in the thickness direction.
  • Such a first connecting portion 231, a second connecting portion 232, a third connecting portion 233, and a fourth connecting portion 234 form a plating layer made of metal on the inner surface of the through hole formed in the support member 1. It is provided by the above, and reaches the support surface 1A and the bottom surface 1B.
  • the insides of the first connecting unit 231 and the second connecting unit 232, the third connecting unit 233 and the fourth connecting unit 234 are resin-filled, but are filled with, for example, metal. It may be a configuration.
  • the first connecting portion 231 is connected to the first main surface portion 211 and the first bottom surface portion 221, and the first main surface portion 211 and the first bottom surface portion 221 are connected to each other. There is.
  • the plurality of second connecting portions 232 are connected to the second main surface portion 212 and the second bottom surface portion 222, and connect the second main surface portion 212 and the second bottom surface portion 222. doing.
  • the plurality of second communication units 232 are arranged in a matrix along the direction x and the direction y.
  • the plurality of third connecting portions 233 are connected to the third main surface portion 213 and the third bottom surface portion 223, and the third main surface portion 213 and the third bottom surface portion 223 are connected to each other. doing.
  • the plurality of third communication units 233 are arranged along the direction x.
  • the plurality of third communication units 233 are arranged closer to the third surface 16 in the direction y.
  • the fourth connecting portion 234 is connected to the fourth main surface portion 214 and the fourth bottom surface portion 224, and the fourth main surface portion 214 and the fourth bottom surface portion 224 are connected to each other. There is. Unlike the illustrated example, the configuration may include a plurality of fourth communication units 234.
  • the semiconductor laser element 4 is a light source of the semiconductor device A20 and includes an active layer made of a semiconductor or the like.
  • the semiconductor laser element 4 has an element body 41, a first laser electrode 44, and a second laser electrode 45.
  • the element main body 41 has an element main surface 411 and an element back surface 412.
  • the element main surface 411 and the element back surface 412 face opposite to each other in the direction z.
  • the element main surface 411 is a surface facing the same side as the main surface 211A in the direction z.
  • the back surface 412 of the element faces the main surface 211A.
  • the first laser electrode 44 is arranged on the element main surface 411.
  • the second laser electrode 45 is arranged on the back surface 412 of the element. In FIG. 12, the first laser electrode 44 is omitted.
  • the first laser electrode 44 is the anode electrode and the second laser electrode 45 is the cathode electrode.
  • the second laser electrode 45 has a configuration in which a plurality of types of metal layers such as silver, nickel, and silver are laminated.
  • the semiconductor laser element 4 is arranged on the first main surface portion 211.
  • the second laser electrode 45 of the semiconductor laser element 4 is electrically bonded to the main surface 211A of the first main surface portion 211 by the conductive bonding material 49.
  • the semiconductor laser device 4 overlaps the convex portion 211B and the concave portion 212B when viewed in the direction y.
  • the semiconductor laser element 4 emits the laser light L to the side facing the fourth surface 17 in the direction y. Further, in the illustrated example, the semiconductor laser element 4 overlaps with the first connecting portion 231 in the direction z.
  • the conductive bonding material 49 is interposed between the conductive portion 2 (the first main surface portion 211 of the main surface portion 21) and the semiconductor laser element 4.
  • the conductive bonding material 49 has a size larger than that of the semiconductor laser element 4 in the direction z, and the entire semiconductor laser element 4 overlaps the conductive bonding material 49 in the direction z.
  • the conductive bonding material 49 has a structure in which a plurality of metal layers are laminated. As shown in FIGS. 15 and 16, in the semiconductor device A20, the conductive bonding material 49 includes a metal base layer 490, a first bonding layer 491, and a second bonding layer 492. Also in the present embodiment, as shown in FIGS. 17 to 20, the conductive bonding material 49 further includes a first intermediate layer 493 and a second intermediate layer 494.
  • the metal base layer 490 occupies most of the volume of the conductive bonding material 49.
  • the thickness of the metal base layer 490 is, for example, about 10 to 200 ⁇ m.
  • the constituent material of the metal base layer 490 contains, for example, at least one of aluminum, titanium, zinc, hafnium and erbium. In the present embodiment, the constituent material of the metal base layer 490 includes aluminum. When the constituent material of the metal base layer 490 is aluminum, the Young's modulus of the metal base layer 490 is 70.3 GPa.
  • the first bonding layer 491 is interposed between the metal base layer 490 and the semiconductor laser device 4. In this embodiment, as shown in FIGS. 17 and 18, the first bonding layer 491 is formed on the first intermediate layer 493.
  • the constituent material of the first bonding layer 491 includes, for example, at least one of silver, copper and gold. In the present embodiment, the constituent material of the first bonding layer 491 contains silver.
  • the first bonding layer 491 is bonded to the semiconductor laser element 4 (second laser electrode 45) by solid-phase diffusion of a metal.
  • the constituent material of the second laser electrode 45 includes, for example, silver.
  • the thickness of the second laser electrode 45 is smaller than the thickness of the first bonding layer 491, and the second laser electrode 45 is formed by, for example, a sputtering method.
  • the second bonding layer 492 is interposed between the metal base layer 490 and the conductive portion 2 (first main surface portion 211). In this embodiment, as shown in FIGS. 19 and 20, the second bonding layer 492 is formed on the second intermediate layer 494.
  • the constituent material of the second bonding layer 492 includes, for example, at least one of silver, copper and gold. In the present embodiment, the constituent material of the second bonding layer 492 contains silver.
  • the second bonding layer 492 is bonded to the conductive portion 2 (first main surface portion 211) by solid phase diffusion of the metal.
  • each of the constituent materials of the first bonding layer 491 and the second bonding layer 492 is silver
  • the Young's modulus of each of the first bonding layer 491 and the second bonding layer 492 is 82.7 GPa. Therefore, as shown by the Young's modulus of the metal base layer 490 (70.3 GPa) described above, the Young's modulus of the metal base layer 490 is smaller than the Young's modulus of each of the first bonding layer 491 and the second bonding layer 492.
  • the thickness of each of the first bonding layer 491 and the second bonding layer 492 is, for example, about 2 to 5 ⁇ m, which is smaller than the thickness of the metal base layer 490.
  • the first intermediate layer 493 is interposed between the metal base layer 490 and the first bonding layer 491.
  • the first intermediate layer 493 is formed on the metal base layer 490.
  • the second intermediate layer 494 is interposed between the metal base layer 490 and the second bonding layer 492.
  • the second intermediate layer 494 is formed on the metal base layer 490.
  • Each constituent material of the first intermediate layer 493 and the second intermediate layer 494 contains, for example, nickel.
  • the Young's modulus of each of the first intermediate layer 493 and the second intermediate layer 494 is 200 GPa.
  • the thickness of each of the first intermediate layer 493 and the second intermediate layer 494 is, for example, about 0.2 to 2 ⁇ m, which is smaller than the thickness of the first bonding layer 491 and the second bonding layer 492.
  • the laminated structure of the conductive bonding material 49 is formed by, for example, a sputtering method or a plating process.
  • the method of forming the conductive bonding material 49 is, for example, the same as that of the conductive bonding material 49 in the semiconductor device A10 described above.
  • the method of joining the conductive portion 2 (first main surface portion 211) and the semiconductor laser element 4 using the conductive bonding material 49 is also the same as the method described with reference to FIG. 11 in the semiconductor device A10 described above. ..
  • the portion of the conductive bonding material 49 that overlaps with the semiconductor laser element 4 when viewed in the direction z is from the semiconductor laser element 4 side. It is slightly dented by receiving pressing pressure. Then, as shown in FIG. 16, in the conductive bonding material 49, the boundary portion between the portion that overlaps with the semiconductor laser element 4 in the direction z and the portion that does not overlap with the semiconductor laser element 4 in the direction z. A step is formed in.
  • the first bonding layer 491 and the second laser electrode A gap 495 may occur at the interface with the 45 (semiconductor laser element 4) and at the interface between the second bonding layer 492 and the first main surface portion 211 (conductive portion 2).
  • the first bonding layer 491 and the second laser electrode A gap 495 may occur at the interface with the 45 (semiconductor laser element 4) and at the interface between the second bonding layer 492 and the first main surface portion 211 (conductive portion 2).
  • the conductive bonding material 49 when viewed in the direction z, is slightly inside (viewed in the direction z) from the boundary portion between the portion where the conductive bonding material 49 overlaps the semiconductor laser element 4 and the portion where the conductive bonding material 49 does not overlap.
  • the boundary surface between the first bonding layer 491 and the second laser electrode 45 (semiconductor laser element 4) and the second bonding layer 492 and the first main surface portion In the portion where the conductive bonding material 49 overlaps the semiconductor laser element 4), the boundary surface between the first bonding layer 491 and the second laser electrode 45 (semiconductor laser element 4) and the second bonding layer 492 and the first main surface portion. There are no voids on the interface with 211 (conductive portion 2). As can be understood from these facts, the first bonding layer 491 and the second laser electrode 45, and the second bonding layer 492 and the first main surface portion 211 are each firmly bonded by solid phase diffusion.
  • the switching element 5 is an element for turning on / off the current to the semiconductor laser element 4.
  • the switching element 5 is a transistor such as an FET made of, for example, Si, SiC, or GaN. When the switching element 5 is made of SiC, it is suitable for speeding up switching.
  • the switching element 5 has an element body 51, a gate electrode 52, a source electrode 53, and a drain electrode 54.
  • the element body 51 is made of a semiconductor material such as Si or SiC, and has an element main surface 511 and an element back surface 512.
  • the element main surface 511 is a surface facing the same side as the main surface 212A in the direction z.
  • the element back surface 512 is a surface facing the same side as the bottom surface 1B in the direction z, and faces the main surface 212A.
  • the gate electrode 52 is arranged on the element main surface 511. In the illustrated example, the gate electrode 52 is arranged closer to the second surface 15 in the direction x and closer to the third surface 16 in the direction y.
  • the shape of the gate electrode 52 is not particularly limited, and in the illustrated example, it is rectangular in the direction z.
  • the source electrode 53 is arranged on the element main surface 511.
  • the source electrode 53 is L-shaped when viewed in the direction z, and is a region on the first surface 14 side in the direction x and a region closer to the fourth surface 17 in the direction y with respect to the gate electrode 52. It is located in.
  • the drain electrode 54 is arranged on the back surface 512 of the element, and in the illustrated example, covers substantially the entire back surface of the element 512.
  • the switching element 5 is arranged on the second main surface portion 212. Specifically, the drain electrode 54 of the switching element 5 is electrically bonded to the main surface 212A of the second main surface portion 212 by the conductive bonding material 59. In the present embodiment, the switching element 5 is arranged on the second main surface portion 212 toward the first surface 14 in the direction x. The switching element 5 overlaps all of the plurality of second communication units 232 in the direction z. The switching element 5 overlaps with the semiconductor laser element 4 when viewed in the direction y.
  • the conductive bonding material 59 is interposed between the conductive portion 2 (the second main surface portion 212 of the main surface portion 21) and the switching element 5.
  • the conductive bonding material 59 has a size larger than that of the switching element 5 when viewed in the direction z, and the entire switching element 5 overlaps the conductive bonding material 59 when viewed in the direction z.
  • the conductive bonding material 59 has a structure in which a plurality of metal layers are laminated.
  • the conductive bonding material 59 like the conductive bonding material 49, includes a metal base layer, a first bonding layer, a second bonding layer, a first intermediate layer, and a second intermediate layer.
  • the specific configurations of the metal base layer, the first bonding layer, the second bonding layer, the first intermediate layer and the second intermediate layer are as follows: the metal base layer 490, the first bonding layer 491, and the second bonding layer 492 in the conductive bonding material 49. , 1st intermediate layer 493 and 2nd intermediate layer 494, respectively.
  • the first bonding layer of the conductive bonding material 59 is bonded to the switching element 5 (drain electrode 54) by solid-phase diffusion of metal
  • the second bonding layer of the conductive bonding material 59 is a conductive portion by solid-phase diffusion of metal. It is joined to 2 (second main surface portion 212).
  • the method of forming the conductive bonding material 59 is, for example, the same as that of the conductive bonding material 49 in the semiconductor device A10 described above.
  • the method of joining the conductive portion 2 (second main surface portion 212) and the switching element 5 using the conductive bonding material 59 is also the same as the method described with reference to FIG. 11 in the semiconductor device A10 described above.
  • the capacitor 6 is for temporarily storing an electric charge that should be a current that energizes the semiconductor laser element 4.
  • the capacitor 6 has an electrode 61 and an electrode 62.
  • the electrode 61 is conductively bonded to the first main surface portion 211 by a bonding member (not shown).
  • the electrode 62 is conductively bonded to the second main surface portion 212 by a bonding member (not shown).
  • the joining member is, for example, solder.
  • the semiconductor device A20 includes two capacitors 6.
  • the two capacitors 6 are connected in parallel with each other. Further, in the present embodiment, the two capacitors 6 are arranged on both sides in the direction x with the semiconductor laser element 4 interposed therebetween. The two capacitors 6 do not overlap the concave portion 212B and the convex portion 211B in the direction y.
  • the plurality of first wires 71 are connected to the source electrode 53 of the switching element 5 and the first laser electrode 44 of the semiconductor laser element 4.
  • the first wire 71 is made of, for example, a metal such as Au, Cu, Al, and in the present embodiment, is made of Au.
  • the number of the plurality of first wires 71 is not particularly limited, and in the illustrated example, it is three.
  • the plurality of first wires 71 are connected to the portion of the source electrode 53 near the fourth surface 17 in the direction y.
  • the plurality of first wires 71 are connected to the first laser electrode 44 of the semiconductor laser element 4 so as to be aligned in the direction y.
  • the plurality of second wires 72 are connected to the source electrode 53 of the switching element 5 and the third main surface portion 213 of the main surface portion 21 of the conductive portion 2.
  • the second wire 72 is made of, for example, a metal such as Au, Cu, Al, and in the present embodiment, is made of Au as well as the first wire 71.
  • the number of the plurality of second wires 72 is not particularly limited, and in the illustrated example, it is two, which is smaller than the number of the plurality of first wires 71. Therefore, the resistance value of the plurality of first wires 71 is smaller than the resistance value of the plurality of second wires 72.
  • the plurality of second wires 72 are connected to the portion of the source electrode 53 near the third surface 16 in the direction y.
  • the plurality of second wires 72 are connected to the third main surface portion 213 so as to be aligned in the direction x.
  • the third wire 73 is connected to the gate electrode 52 of the switching element 5 and the fourth main surface portion 214 of the main surface portion 21 of the conductive portion 2.
  • the third wire 73 is made of, for example, a metal such as Au, Cu, Al, and in the present embodiment, is made of Au.
  • the number of the third wire 73 is not particularly limited, and is one in the illustrated example.
  • the translucent resin 8 is arranged on the support surface 1A of the support member 1, and includes the support surface 1A, the semiconductor laser element 4, the switching element 5, the plurality of capacitors 6, the plurality of first wires 71, and the plurality of second. It covers the wire 72 and the third wire 73.
  • the translucent resin 8 is made of a material that transmits the laser light L from the semiconductor laser element 4, and is made of, for example, a transparent epoxy resin or a silicone resin.
  • the shape of the translucent resin 8 is not particularly limited, and in the present embodiment, as shown in FIGS. 12 and 14, the translucent resin 8 has a resin main surface 81, a resin first surface 84, and a resin second surface 85. , Has a resin third surface 86 and a resin fourth surface 87.
  • the resin main surface 81 is a surface facing the same side as the support surface 1A in the direction z, and is a flat surface in the illustrated example.
  • the first surface 84 of the resin is a surface facing the same side as the first surface 14 in the direction x. In the illustrated example, the first surface 84 of the resin is a flat surface and is flush with the first surface 14.
  • the resin second surface 85 is a surface facing the same side as the second surface 15 in the direction x. In the illustrated example, the resin second surface 85 is flat and flush with the second surface 15.
  • the resin third surface 86 is a surface facing the same side as the third surface 16 in the direction y. In the illustrated example, the resin third surface 86 is flat and flush with the third surface 16.
  • the fourth surface 87 of the resin is a surface facing the same side as the fourth surface 17 in the direction y.
  • the resin fourth surface 87 is a flat surface and is flush with the resin fourth surface 87.
  • the laser light L from the semiconductor laser element 4 is emitted from the resin fourth surface 87 of the translucent resin 8.
  • the conductive bonding material 49 interposed between the conductive portion 2 and the semiconductor laser element 4 includes a metal base layer 490, a first bonding layer 491, and a second bonding layer 492.
  • the first bonding layer 491 and the semiconductor laser element 4 (second laser electrode 45), and the second bonding layer 492 and the conductive portion 2 (first main surface portion 211) are conductively bonded by solid-phase diffusion of a metal, respectively.
  • a metal base layer 490 is interposed between the first bonding layer 491 and the second bonding layer 492.
  • the first bonding layer 491 and the semiconductor laser element 4 (second laser electrode 45), and the second bonding layer 492 and the conductive portion 2 (first main surface portion 211) are respectively solidified by solid phase diffusion.
  • the metal base layer 490 functions as a cushion.
  • the pressure is made uniform. Therefore, the first bonding layer 491 and the semiconductor laser element 4 (second laser electrode 45), and the second bonding layer 492 and the conductive portion 2 (first main surface portion 211) are firmly bonded by solid phase diffusion bonding, respectively. There is.
  • the semiconductor device A20 provided with the conductive bonding material 49, it is possible to improve the reliability of the bonding state between the semiconductor laser element 4 and the conductive portion 2.
  • the Young's modulus of the metal base layer 490 is smaller than the Young's modulus of each constituent material of the first bonding layer 491 and the second bonding layer 492. According to such a configuration, when the conductive bonding material 49 is bonded to the semiconductor laser element 4 (second laser electrode 45) and the conductive portion 2 (first main surface portion 211) by solid phase diffusion, it is relatively soft. The stress is relaxed by the metal base layer 490, and the joint boundary portion can be smoothed. As a result, the first bonding layer 491 and the semiconductor laser element 4 (second laser electrode 45), and the second bonding layer 492 and the conductive portion 2 (first main surface portion 211) are more firmly bonded by solid phase diffusion. ..
  • the thickness of the metal base layer 490 is larger than the thickness of each of the first bonding layer 491 and the second bonding layer 492.
  • the conductive bonding material 49 includes a first intermediate layer 493 and a second intermediate layer 494.
  • the first intermediate layer 493 is interposed between the metal base layer 490 and the first bonding layer 491
  • the second intermediate layer 494 is interposed between the metal base layer 490 and the second bonding layer 492.
  • the configuration having the first intermediate layer 493 and the second intermediate layer 494 includes a boundary portion between the first bonding layer 491 and the semiconductor laser device 4 (second laser electrode 45) and a second bonding layer during bonding by solid phase diffusion. It is suitable for equalizing the pressing force acting on each of the boundary portions between the 492 and the conductive portion 2 (first main surface portion 211).
  • the Young's modulus of the first intermediate layer 493 and the second intermediate layer 494 is relatively large. In this case, the pressing force acting on the bonding boundary during solid-phase diffusion bonding becomes more uniform, and the first bonding layer 491 and the semiconductor laser element 4 (second laser electrode 45) and the second bonding layer 492 are conductive.
  • the portion 2 (first main surface portion 211) may be in a stronger conductive joint state.
  • each constituent material of the first bonding layer 491 and the second bonding layer 492 contains silver. According to such a configuration, when bonding by solid phase diffusion using the conductive bonding material 49, oxidation of the first bonding layer 491 and the second bonding layer 492 is suppressed, and good solid phase diffusion bonding is possible. Become.
  • the conductive bonding material 59 interposed between the conductive portion 2 and the switching element 5 is a metal base layer, a first bonding layer, a second bonding layer, a first intermediate layer, and a second intermediate, similarly to the conductive bonding material 49. Includes layers.
  • the specific configurations of the metal base layer, the first bonding layer, the second bonding layer, the first intermediate layer and the second intermediate layer are as follows: the metal base layer 490, the first bonding layer 491, and the second bonding layer 492 in the conductive bonding material 49. , 1st intermediate layer 493 and 2nd intermediate layer 494, respectively. Therefore, the conductive bonding material 59 can also improve the reliability of the bonding state between the switching element 5 and the conductive portion 20. By providing the conductive bonding material 59, the same effect as described above can be obtained with respect to the conductive bonding material 49.
  • the semiconductor device A30 according to the third embodiment will be described with reference to FIGS. 21 to 28.
  • the illustrated semiconductor device A30 includes a support member 1, a weir portion 18, a conductive portion 2, an LED element 400, a wire 7, and a translucent resin 8.
  • the semiconductor device A30 is used as a light source in various lighting devices, display devices, and the like.
  • the semiconductor device A30 has a rectangular shape when viewed in the direction z.
  • the direction x and the direction y correspond to the directions along the rectangular sides of the semiconductor device A20, respectively.
  • the translucent resin 8 is omitted.
  • the support member 1 supports the LED element 400 via the conductive portion 2.
  • the support member 1 is made of an insulating material.
  • the material of the support member 1 is not particularly limited, and examples thereof include an epoxy resin and a glass epoxy resin. In the following description, a case where the support member 1 is made of ceramics will be described as an example.
  • the support member 1 has a support surface 1A and a bottom surface 1B, and is, for example, rectangular in the direction z.
  • the support surface 1A is a surface facing one side in the direction z, and is a flat surface in the illustrated example.
  • the bottom surface 1B is a surface facing the other side in the direction z opposite to the support surface 1A, and is a flat surface in the illustrated example.
  • the conductive portion 2 is a portion that constitutes a conduction path to the LED element 400.
  • the material of the conductive portion 2 is not particularly limited, and examples thereof include metals such as copper (Cu), nickel (Ni), titanium (Ti), and gold (Au).
  • the method for forming the conductive portion 2 is not particularly limited, and in the illustrated example, it is formed by plating, for example.
  • the illustrated conductive portion 2 includes a main surface portion 21, a bottom surface portion 22, and a connecting portion 23.
  • the main surface portion 21 is arranged on the support surface 1A of the support member 1.
  • the main surface portion 21 has a thin plate shape with the direction z as the thickness direction.
  • the main surface portion 21 includes a first main surface portion 211 and a second main surface portion 212.
  • the first main surface portion 211 is arranged at the center of the support member 1 in the direction z-view.
  • the first main surface portion 211 has a main surface 211A facing one side in the direction z.
  • the shape of the first main surface portion 211 is not particularly limited, but in the illustrated example, it is rectangular.
  • the second main surface portion 212 is arranged closer to the direction x one side than the first main surface portion 211.
  • the shape of the second main surface portion 212 is not particularly limited, and in the illustrated example, it is rectangular.
  • the area of the second main surface portion 212 is smaller than that of the first main surface portion 211.
  • the bottom surface portion 22 is arranged on the bottom surface 1B of the support member 1.
  • the bottom surface portion 22 includes a first bottom surface portion 221 and a second bottom surface portion 222.
  • the bottom surface portion 22 is used as a mounting terminal when the semiconductor device A30 is mounted on a circuit board (not shown) or the like.
  • the first bottom surface portion 221 is arranged at the center of the support member 1 in the direction z-view.
  • the shape of the first bottom surface portion 221 is not particularly limited, and is rectangular in the present embodiment.
  • the second bottom surface portion 222 is arranged closer to the direction x one side than the first bottom surface portion 221.
  • the shape of the second bottom surface portion 222 is not particularly limited, and is rectangular in the present embodiment.
  • the area of the second bottom surface portion 222 is smaller than that of the first bottom surface portion 221.
  • the contact portion 23 conducts each portion of the main surface portion 21 and each portion of the bottom surface portion 22.
  • the specific configuration of the communication unit 23 is not particularly limited, and in the illustrated example, as shown in FIGS. 21 and 22, the first communication unit 231 and the second communication unit 232 are included. In the illustrated example, one first communication unit 231 is provided, but the number of the first communication units 231 is not particularly limited.
  • first connecting unit 231 and the second connecting unit 232 are not particularly limited, and in the present embodiment, as shown in FIGS. 21 and 22, in the inner region of the support member 1 in the direction z view, It penetrates the support member 1 in the thickness direction.
  • Such a first connecting portion 231 and a second connecting portion 232 are provided by filling the through holes formed in the support member 1 with metal, and reach the support surface 1A and the bottom surface 1B. ..
  • the first connecting portion 231 and the second connecting portion 232 may be provided by forming a plating layer made of metal on the inner surface of the through hole formed in the support member 1, in which case.
  • the inside of the first connecting portion 231 and the second connecting portion 232 is filled with resin.
  • the first connecting portion 231 is connected to the first main surface portion 211 and the first bottom surface portion 221 and connects the first main surface portion 211 and the first bottom surface portion 221.
  • the second connecting portion 232 is connected to the second main surface portion 212 and the second bottom surface portion 222, and connects the second main surface portion 212 and the second bottom surface portion 222.
  • the LED element 400 is a light source of the semiconductor device A30, and includes an active layer composed of a semiconductor layer and the like.
  • the LED element 400 has an element main body 41, an electrode pad 421, and a back surface electrode 43.
  • the element body 41 is made of, for example, a GaN-based semiconductor, and emits blue light, for example.
  • the element main body 41 has an element main surface 411 and an element back surface 412.
  • the element main surface 411 and the element back surface 412 face opposite to each other in the direction z.
  • the element main surface 411 is a surface facing the same side as the main surface 211A in the direction z.
  • the back surface 412 of the element is a surface facing the same side as the bottom surface 1B in the direction z, and faces the main surface 211A.
  • the electrode pad 421 is arranged on the element main surface 411.
  • the back surface electrode 43 is arranged on the back surface 412 of the element.
  • the electrode pad 421 is the anode electrode and the back electrode 43 is the cathode electrode.
  • the back electrode 43 is made of, for example, silver.
  • the LED element 400 is arranged on the first main surface portion 211. Specifically, the back electrode 43 of the LED element 400 is electrically bonded to the main surface 211A of the first main surface portion 211 by the conductive bonding material 49. In the LED element 400, the light emitted from the element main body 41 is emitted to the side (direction z one side) facing the element main surface 411. In the illustrated example, the LED element 400 overlaps with the first communication unit 231 in the direction z.
  • the conductive bonding material 49 is interposed between the conductive portion 2 (the first main surface portion 211 of the main surface portion 21) and the LED element 400.
  • the conductive bonding material 49 has a size larger than that of the LED element 400 when viewed in the direction z, and the entire LED element 400 overlaps the conductive bonding material 49 when viewed in the direction z.
  • the conductive bonding material 49 has a structure in which a plurality of metal layers are laminated. As shown in FIGS. 23 and 24, in the semiconductor device A30, the conductive bonding material 49 includes a metal base layer 490, a first bonding layer 491, and a second bonding layer 492. As shown in FIGS. 25 to 28, the conductive bonding material 49 further includes a first intermediate layer 493 and a second intermediate layer 494.
  • the metal base layer 490 occupies most of the volume of the conductive bonding material 49.
  • the thickness of the metal base layer 490 is, for example, about 10 to 200 ⁇ m.
  • the constituent material of the metal base layer 490 contains, for example, at least one of aluminum, titanium, zinc, hafnium and erbium. In the present embodiment, the constituent material of the metal base layer 490 includes aluminum. When the constituent material of the metal base layer 490 is aluminum, the Young's modulus of the metal base layer 490 is 70.3 GPa.
  • the first bonding layer 491 is interposed between the metal base layer 490 and the LED element 400.
  • the first bonding layer 491 is formed on the first intermediate layer 493.
  • the constituent material of the first bonding layer 491 includes, for example, at least one of silver, copper and gold. In the present embodiment, the constituent material of the first bonding layer 491 contains silver.
  • the first bonding layer 491 is bonded to the LED element 400 (back surface electrode 43) by solid phase diffusion of metal.
  • the constituent material of the back surface electrode 43 includes, for example, silver.
  • the thickness of the back surface electrode 43 is smaller than the thickness of the first bonding layer 491, and the back surface electrode 43 is formed by, for example, a sputtering method.
  • the second bonding layer 492 is interposed between the metal base layer 490 and the conductive portion 2 (first main surface portion 211). In this embodiment, as shown in FIGS. 27 and 28, the second bonding layer 492 is formed on the second intermediate layer 494.
  • the constituent material of the second bonding layer 492 includes, for example, at least one of silver, copper and gold. In the present embodiment, the constituent material of the second bonding layer 492 contains silver.
  • the second bonding layer 492 is bonded to the conductive portion 2 (first main surface portion 211) by solid phase diffusion of the metal.
  • each of the constituent materials of the first bonding layer 491 and the second bonding layer 492 is silver
  • the Young's modulus of each of the first bonding layer 491 and the second bonding layer 492 is 82.7 GPa. Therefore, as shown by the Young's modulus of the metal base layer 490 (70.3 GPa) described above, the Young's modulus of the metal base layer 490 is smaller than the Young's modulus of each of the first bonding layer 491 and the second bonding layer 492.
  • the thickness of each of the first bonding layer 491 and the second bonding layer 492 is, for example, about 2 to 5 ⁇ m, which is smaller than the thickness of the metal base layer 490.
  • the first intermediate layer 493 is interposed between the metal base layer 490 and the first bonding layer 491.
  • the first intermediate layer 493 is formed on the metal base layer 490.
  • the second intermediate layer 494 is interposed between the metal base layer 490 and the second bonding layer 492.
  • the second intermediate layer 494 is formed on the metal base layer 490.
  • Each constituent material of the first intermediate layer 493 and the second intermediate layer 494 contains, for example, nickel.
  • the Young's modulus of each of the first intermediate layer 493 and the second intermediate layer 494 is 200 GPa.
  • the thickness of each of the first intermediate layer 493 and the second intermediate layer 494 is, for example, about 0.2 to 2 ⁇ m, which is smaller than the thickness of the first bonding layer 491 and the second bonding layer 492.
  • the laminated structure of the conductive bonding material 49 is formed by, for example, a sputtering method or a plating process.
  • the method of forming the conductive bonding material 49 is, for example, the same as that of the conductive bonding material 49 in the semiconductor device A10 described above.
  • the method of joining the conductive portion 2 (first main surface portion 211) and the LED element 400 using the conductive bonding material 49 is also the same as the method described with reference to FIG. 11 in the semiconductor device A10 described above.
  • the portion of the conductive bonding material 49 that overlaps with the semiconductor laser element 4 when viewed in the direction z is pushed from the semiconductor laser element 4 side. It dents slightly when it receives pressure. Then, as shown in FIG. 24, in the conductive bonding material 49, there is a step at the boundary between the portion that overlaps the LED element 400 when viewed in the direction z and the portion that does not overlap the LED element 400 when viewed in the direction z. Is formed.
  • the first bonding layer 491 and the back surface electrode 43 are located near the boundary between the portion where the conductive bonding material 49 overlaps the LED element 400 and the portion where the conductive bonding material 49 does not overlap when viewed in the direction z.
  • a gap 495 may occur at the interface with the element 400) and at the interface between the second bonding layer 492 and the first main surface portion 211 (conductive portion 2).
  • the conductive bonding material 49 is slightly inside the boundary portion between the portion where the conductive bonding material 49 overlaps the LED element 400 and the portion where the conductive bonding material 49 does not overlap (when viewed in the direction z).
  • the first bonding layer 491 and the back surface electrode 43, and the second bonding layer 492 and the first main surface portion 211 are each firmly bonded by solid phase diffusion.
  • the wire 7 is connected to the electrode pad 421 of the LED element 400 and the second main surface portion 212 of the conductive portion 2.
  • the wire 7 is made of, for example, a metal such as Au, Cu, Al, and in the present embodiment, is made of Au.
  • the weir portion 18 is arranged on the support surface 1A of the support member 1.
  • the weir portion 18 has a frame shape that is closed when viewed in the direction z, has a rectangular outer edge, and has a circular inner edge.
  • the weir portion 18 surrounds the LED element 400 and the translucent resin 8 when viewed in the direction z.
  • the weir portion 18 is made of, for example, a white silicone resin.
  • the translucent resin 8 is filled in the space surrounded by the weir portion 18, and covers a part of the support surface 1A of the support member 1, the LED element 400, and the wire 7.
  • the translucent resin 8 is made of a material that transmits light from the LED element 400, and is made of a material in which a fluorescent material is mixed with, for example, a transparent silicone resin or an epoxy resin.
  • a fluorescent material for example, a material that emits yellow light when excited by blue light from the LED element 400 is adopted. As a result, white light is emitted from the semiconductor device A30.
  • the conductive bonding material 49 interposed between the conductive portion 2 and the LED element 400 includes a metal base layer 490, a first bonding layer 491, and a second bonding layer 492.
  • the first bonding layer 491 and the LED element 400 (back surface electrode 43), and the second bonding layer 492 and the conductive portion 2 (first main surface portion 211) are conductively bonded by solid-phase diffusion of a metal, respectively, and the first bonding is performed.
  • a metal base layer 490 is interposed between the layer 491 and the second bonding layer 492.
  • the metal base layer 490 functions as a cushion.
  • the pressing force acting on the boundary between the first bonding layer 491 and the LED element 400 (back surface electrode 43) and the boundary between the second bonding layer 492 and the conductive portion 2 (first main surface portion 211) are uniform. Is planned. Therefore, the first bonding layer 491 and the LED element 400 (back surface electrode 43), and the second bonding layer 492 and the conductive portion 2 (first main surface portion 211) are firmly bonded by solid phase diffusion bonding, respectively.
  • the semiconductor device A30 provided with the conductive bonding material 49, it is possible to improve the reliability of the bonding state between the LED element 400 and the conductive portion 2.
  • the Young's modulus of the metal base layer 490 is smaller than the Young's modulus of each constituent material of the first bonding layer 491 and the second bonding layer 492. According to such a configuration, when the conductive bonding material 49 is bonded to the LED element 400 (back surface electrode 43) and the conductive portion 2 (first main surface portion 211) by solid phase diffusion, the relatively soft metal base layer 490 This relieves stress and smoothes the joint boundary. As a result, the first bonding layer 491 and the LED element 400 (back surface electrode 43), and the second bonding layer 492 and the conductive portion 2 (first main surface portion 211) are more firmly bonded by solid phase diffusion.
  • the thickness of the metal base layer 490 is larger than the thickness of each of the first bonding layer 491 and the second bonding layer 492.
  • the conductive bonding material 49 includes a first intermediate layer 493 and a second intermediate layer 494.
  • the first intermediate layer 493 is interposed between the metal base layer 490 and the first bonding layer 491
  • the second intermediate layer 494 is interposed between the metal base layer 490 and the second bonding layer 492.
  • the configuration having the first intermediate layer 493 and the second intermediate layer 494 is conductive with the boundary portion between the first bonding layer 491 and the LED element 400 (back surface electrode 43) and the second bonding layer 492 during bonding by solid phase diffusion. It is suitable for equalizing the pressing force acting on each of the boundary portions of the portion 2 (first main surface portion 211).
  • the Young's modulus of the first intermediate layer 493 and the second intermediate layer 494 is relatively large. In this case, the pressing force acting on the bonding boundary portion during solid phase diffusion bonding becomes more uniform, and the first bonding layer 491 and the LED element 400 (back surface electrode 43), and the second bonding layer 492 and the conductive portion 2 ( The first main surface portion 211) may be in a stronger conductive joint state.
  • each constituent material of the first bonding layer 491 and the second bonding layer 492 contains silver. According to such a configuration, when bonding by solid phase diffusion using the conductive bonding material 49, oxidation of the first bonding layer 491 and the second bonding layer 492 is suppressed, and good solid phase diffusion bonding is possible. Become.
  • each layer constituting the conductive bonding material of the present disclosure are not limited to the above-described embodiment.
  • the conductive bonding material has a metal base layer, a first bonding layer, a second bonding layer, a first intermediate layer and a second intermediate layer has been described, but for example, the first intermediate layer and the second intermediate layer have been described. It may be configured not to have.
  • the conductive bonding material in addition to the above-mentioned metal base layer, first bonding layer, second bonding layer, first intermediate layer and second intermediate layer, for example, between the metal base layer and the first bonding layer or with the metal base layer.
  • Another metal layer may be interposed between the second bonding layer 492 and the second bonding layer 492.
  • Appendix 1 A conductive part with a main surface and The semiconductor element mounted on the main surface and A conductive bonding material that is interposed between the conductive portion and the semiconductor element and conductively joins the conductive portion and the semiconductor element is provided.
  • the conductive bonding material includes a metal base layer, a first bonding layer, and a second bonding layer, and the first bonding layer is interposed between the metal base layer and the semiconductor element, and is a solid phase of the metal.
  • a semiconductor device that is bonded to the semiconductor element by diffusion, the second bonding layer is interposed between the metal base layer and the conductive portion, and is bonded to the conductive portion by solid-phase diffusion of a metal.
  • the semiconductor device according to Appendix 1 wherein the Young's modulus of the metal base layer is smaller than the Young's modulus of each of the first bonding layer and the second bonding layer.
  • Appendix 3. The semiconductor device according to Appendix 2, wherein the thickness of the metal base layer is larger than the thickness of each of the first bonding layer and the second bonding layer.
  • Appendix 4. The semiconductor device according to Appendix 3, wherein the constituent material of the metal base layer contains at least one of aluminum, titanium, zinc, hafnium and erbium.
  • Appendix 5 The semiconductor device according to Appendix 4, wherein each of the constituent materials of the first bonding layer and the second bonding layer contains at least one of silver, copper, and gold. Appendix 6.
  • the semiconductor element has an element body and a back surface electrode formed on the element body.
  • Appendix 7. The semiconductor device according to Appendix 6, wherein the thickness of each of the first bonding layer and the second bonding layer is larger than the thickness of the back electrode.
  • Appendix 8. The conductive bonding material includes a first intermediate layer and a second intermediate layer, the first intermediate layer is interposed between the metal base layer and the first bonding layer, and the second intermediate layer is the said.
  • each of the constituent materials of the first intermediate layer and the second intermediate layer contains nickel.
  • Appendix 10. The semiconductor device according to any one of Supplementary note 1 to 9, further comprising a support substrate having a support surface facing the conductive portion. Appendix 11. Further provided with a joining member for joining the conductive portion to the support substrate, The semiconductor device according to Appendix 10, wherein the bonding member includes a plurality of metal layers bonded by solid phase diffusion. Appendix 12.
  • a sealing resin that covers the conductive portion, the semiconductor element, and a part of the support substrate is further provided, the support substrate has a bottom surface opposite to the support surface, and the bottom surface is the seal.
  • the semiconductor element includes a first switching element and a second switching element
  • the conductive portion includes a first conductive portion to which the first switching element is conductively bonded and a second conductive portion to which the second switching element is conductively bonded.
  • the first input terminal is connected to the first conductive portion
  • the second input terminal is connected to the second switching element
  • the first output terminal and the second output terminal are connected to the second conductive portion.
  • the semiconductor device according to Appendix 12 wherein the sealing resin covers a part of each of the first input terminal, the second input terminal, the first output terminal, and the second output terminal. Appendix 14.
  • a support member having a support surface for supporting the semiconductor element is further provided.
  • the semiconductor device according to any one of Supplementary note 1 to 9, wherein the conductive portion includes a main surface portion, a bottom surface portion, and a connecting portion that conducts the main surface portion and the bottom surface portion.
  • the semiconductor element includes a semiconductor laser element and a switching element.
  • the conductive portion includes a first portion and a second portion that are separated from each other.
  • the semiconductor device according to Appendix 14 wherein the semiconductor laser element is conduction-bonded to the first part, and the switching element is conduction-bonded to the second part.
  • Appendix 16 The semiconductor device according to Appendix 15, further comprising a translucent resin that covers the semiconductor laser element, the switching element, and the support surface of the support member. Appendix 17.
  • the semiconductor element includes an LED element.
  • the semiconductor device according to Appendix 14 wherein the translucent resin covers the LED element and at least a part of the support surface of the support member.
  • a frame-shaped weir portion arranged on the support surface of the support member is further provided.
  • A10, A20, A30 Semiconductor device 1 Support member 1A Support surface 1B Bottom plate 10 Support substrate 10A Support surface 10B Bottom surface 11 First support plate 12 Second support plate 121 First region 122 Second region 123 Third region 13 Bottom plate 13A Recess 14 1st surface 15 2nd surface 16 3rd surface 17 4th surface 18 Dam part 19 Joint member 2 Conductive part 20 Conductive part 20A Main surface 20B Back surface 201 1st conductive part 202 2nd conductive part 203 3rd conductive part 21 Main surface part 21A Main surface 211 First main surface portion 211A Main surface 211B Convex portion 212 Second main surface portion 212A Main surface 212B Recessed 213 Third main surface portion 213A Main surface 214 Fourth main surface portion 214A Main surface 22 Bottom portion 221 First bottom surface portion 222 First 2 Bottom part 223 3rd bottom part 224 4th bottom part 23 Communication part 231 1st communication part 232 2nd connection part 233 3rd connection part 234 4th connection part 24 Base material 25 Conductor

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Abstract

半導体装置は、主面を有する導電部と、前記主面に搭載された半導体素子と、前記導電部と前記半導体素子との間に介在し、前記導電部と前記半導体素子とを導通接合させる導電性接合材と、を備える。前記導電性接合材は、金属基層と、第１接合層と、第２接合層とを含む。前記第１接合層は、前記金属基層と前記半導体素子との間に介在し、金属の固相拡散により前記半導体素子と接合されている。前記第２接合層は、前記金属基層と前記導電部との間に介在し、金属の固相拡散により前記導電部と接合されている。

Description

半導体装置
　本開示は、半導体素子を備える半導体装置に関する。
　従来、ＭＯＳＦＥＴやＩＧＢＴなどの半導体素子を搭載した半導体装置が広く知られている。特許文献１には、そのような半導体装置の一例が開示されている。当該半導体装置では、支持基板（絶縁基板）の上に金属パターン（導電部）が形成されている。半導体素子は、当該金属パターンに導電性接合材を介して接合されている。
　特許文献１に開示された半導体装置の使用時には、半導体素子から熱が発生し、周囲の温度が上昇する。特に導電性接合材は、高温に晒される場合がある。導電性接合材が繰り返し高温に晒されると、当該導電性接合材の状態が変化する。その結果、半導体素子と金属パターンとの導通状態が損なわれるおそれがある。
特開２００９－１５８７８７号公報
　上記した事情に鑑み、本開示は、半導体素子と導電部との適切な接合状態を維持することにより、当該接合状態に対する信頼性を向上させるのに適した半導体装置を提供することを一の課題とする。
　本開示の一の側面によって提供される半導体装置は、主面を有する導電部と、前記主面に搭載された半導体素子と、前記導電部と前記半導体素子との間に介在し、前記導電部と前記半導体素子とを導通接合させる導電性接合材と、を備えており、前記導電性接合材は、金属基層と、第１接合層と、第２接合層とを含み、前記第１接合層は、前記金属基層と前記半導体素子との間に介在し、金属の固相拡散により前記半導体素子と接合されており、前記第２接合層は、前記金属基層と前記導電部との間に介在し、金属の固相拡散により前記導電部と接合されている。
　本開示のその他の特徴および利点は、添付図面を参照して以下に行う詳細な説明によって、より明らかとなろう。
第１実施形態に係る半導体装置を示す斜視図である。 図１に示した半導体装置の平面図である。 図２のＩＩＩ－ＩＩＩ線に沿う断面図である。 図２のＩＶ－ＩＶ線に沿う断面図である。 図３の部分拡大図である。 図５の部分拡大図である。 図６のＡ部拡大図である。 図６のＢ部拡大図である。 図６のＣ部拡大図である。 図６のＤ部拡大図である。 半導体素子と導電部との接合方法を説明するための図である。 第２実施形態に係る半導体装置を示す平面図である。 図１２に示した半導体装置の底面図である。 図１２のＸＩＶ－ＸＩＶ線に沿う断面図である。 図１４の部分拡大図である。 図１５の部分拡大図である。 図１６のＡ部拡大図である。 図１６のＢ部拡大図である。 図１６のＣ部拡大図である。 図１６のＤ部拡大図である。 第３実施形態に係る半導体装置を示す平面図である。 図２１のＸＸＩＩ－ＸＸＩＩ線に沿う断面図である。 図２２の部分拡大図である。 図２３の部分拡大図である。 図２４のＡ部拡大図である。 図２４のＢ部拡大図である。 図２４のＣ部拡大図である。 図２４のＤ部拡大図である。
　以下、本開示の好ましい実施の形態につき、図面を参照して具体的に説明する。
　本開示における「第１」、「第２」、「第３」等の用語は、単にラベルとして用いたものであり、必ずしもそれらの対象物に順列を付することを意図していない。
　図１～図１０に基づき、第１実施形態に係る半導体装置Ａ１０について説明する。図示された半導体装置Ａ１０は、支持基板１０、複数の導電部２０、第１入力端子３１、第２入力端子３２、第１出力端子３３、第２出力端子３４、複数の半導体素子４０、および封止樹脂８０（図１では省略）を備える。これらに加え、半導体装置Ａ１０は、一対の絶縁層２６、一対のゲート配線層２７１、一対の検出配線層２７２、一対のゲート端子３５および一対の検出端子３６を備える。各半導体素子４０は、たとえばＭＯＳＦＥＴであり、半導体装置Ａ１０は、たとえば電力変換装置（パワーモジュール）である。半導体装置Ａ１０は、モータの駆動源、様々な電気製品のインバータ装置、およびＤＣ／ＤＣコンバータなどに用いられる。図２～図４において、封止樹脂８０を透過して示している（二点鎖線参照）。
　半導体装置Ａ１０の説明においては、たとえば図１に示すように、支持基板１０（あるいは導電部２０）の厚みを貫通して延びる方向を「方向ｚ」とする（「厚さ方向」と称する場合もある）。方向ｚに対して直交する一の方向を「方向ｘ」とし、方向ｚおよび方向ｘの双方に対して直交する方向を「方向ｙ」とする。図２に示すように、半導体装置Ａ１０は、方向ｚに視て（換言すれば平面視で）矩形状である。また、方向ｘは、半導体装置Ａ１０の一の辺（たとえば図２における左側の辺）に平行であり、方向ｙは、半導体装置Ａ１０の別の辺（たとえば図２における下側の辺）に平行である。半導体装置Ａ１０の説明においては、任意の方向において互いに離間配置された２つの部材ＡおよびＢ（あるいは２つのグループＡおよびＢ）があるとき、「部材Ａは、（部材Ｂに対して）当該方向の一方側にある」または「部材Ｂは、（部材Ａに対して）当該方向の他方側にある」などと記述する場合がある。これによれば、図２において、たとえば、「第１入力端子３１や第２入力端子３２は、方向ｘの一方側に配置されており、第１出力端子３３や第２出力端子３４は、方向ｘの他方側に配置されている」と述べられる。なお、「一方側」および「他方側」はこの例の逆であってもよい。
　支持基板１０は、図１～図４に示すように、複数の導電部２０を支持している。図示の例では、支持基板１０は、方向ｚに視て正方形状である。支持基板１０は、方向ｚにおいて互いに反対側を向く（互いに離間する）支持面１０Ａおよび底面１０Ｂを有する。支持面１０Ａは、各導電部２０に対向している。図３、図４に示すように、底面１０Ｂは、封止樹脂８０から露出している。半導体装置Ａ１０をたとえばヒートシンクに取り付ける際、底面１０Ｂが、当該ヒートシンクに対向する。図示に例では、支持基板１０は、第１支持板１１、第２支持板１２および底板１３を含んでいる。
　図３および図４に示すように、第１支持板１１は、方向ｚにおいて第２支持板１２と底板１３との間に位置する。第１支持板１１は、電気絶縁性を有する。第１支持板１１の構成材料は、熱伝導性に優れたセラミックスである。当該セラミックスとして、たとえば窒化アルミニウム（ＡｌＮ）が挙げられる。
　各第２支持板１２は、第１支持板１１に積層されており、支持面１０Ａを有する。第２支持板１２には、対応する１つの導電部２０が接合されている。第２支持板１２は、金属製であり、たとえば、金属箔により構成される。第２支持板１２は、銅（Ｃｕ）または銅合金からなり、導電性を有する。図に示す例においては、第２支持板１２は、第１領域１２１、第２領域１２２および第３領域１２３の３つの領域（支持板）を有する。これらの３つの領域は、互いに離間している。
　底板１３は、第２支持板１２とは反対側において第１支持板１１に積層されている。底板１３は、底面１０Ｂを含む。底板１３は、第２支持板１２と同じく金属製であり、たとえば、銅または銅合金からなる金属箔により構成される。第２支持板１２は、導電性を有する。図３および図４から理解されるように、方向ｚに視て、底板１３の面積は、第１支持板１１の面積よりも小である。底板１３の周縁よりも外方に、第１支持板１１の周縁が位置する。これにより、方向ｚに視て、支持基板１０には、底板１３を囲む凹部１３Ａが設けられている。凹部１３Ａは、封止樹脂８０に覆われる。
　支持基板１０は、たとえばＤＢＣ（Direct Bonded Copper）基板を用いることにより形成することができる。ＤＢＣ基板は、セラミックス板と、方向ｚの両側からセラミックス板を挟む一対の銅箔とにより構成される。当該セラミックス板が第１支持板１１となる。一対の銅箔をそれぞれエッチングにより部分除去することにより、第２支持板１２および底板１３が形成される。
　図３および図４に示すように、第１領域１２１、第２領域１２２および第３領域１２３の各々の支持面１０Ａを覆うように接合部材１９が設けられている。すなわち、各接合部材１９は、支持基板１０の支持面１０Ａの少なくとも一部を覆っている。
　図３および図４に示すように、各導電部２０は、接合部材１９を介して対応する１つの第２支持板１２に接合されている。複数の導電部２０は、第１入力端子３１、第２入力端子３２、第１出力端子３３および第２出力端子３４とともに、半導体装置Ａ１０における所定の導電経路を構成している。各導電部２０は、方向ｚにおいて互いに反対側を向く主面２０Ａおよび裏面２０Ｂを有し、裏面２０Ｂが、支持基板１０の支持面１０Ａに対向している。
　半導体装置Ａ１０において、導電部２０は、たとえば金属板によって構成される。当該金属板は、たとえば銅または銅合金製である。図３、図４に示すように、導電部２０の厚さは、第２支持板１２の厚さよりも大である。導電部２０は、前記金属板の表面に、たとえば、銀めっきまたはアルミニウム層、ニッケル（Ｎｉ）層、銀層の順に積層された複数種の金属めっきが施された構成であってもよい。詳細は後述（図９、図１０参照）するが、本実施形態では、導電部２０は、金属製の基材２４と、当該基材２４上に形成された導体層２５とを具備している。
　図２～図４に示すように、複数の導電部２０は、第１導電部２０１、第２導電部２０２および第３導電部２０３を含む。第１導電部２０１は、第２支持板１２の第１領域１２１に接合されている。第２導電部２０２は、第２支持板１２の第２領域１２２に接合されている。第３導電部２０３は、第２支持板１２の第３領域１２３に接合されている。このため、第１導電部２０１、第２導電部２０２および第３導電部２０３は、互いに離間している。
　図１、図２および図４に示すように、一対の絶縁層２６が、第１導電部２０１および第２導電部２０２の各々の主面２０Ａに配置されている。一対の絶縁層２６は、方向ｙにおいて互いに離間している。一対の絶縁層２６は、方向ｘに延びる帯状である。絶縁層２６の構成材料は、たとえば、セラミックスまたはガラスエポキシ樹脂である。また、絶縁層２６は、少なくとも表面が絶縁性のＳｉＣなどで形成されていてもよい。
　一対のゲート配線層２７１が、一対の絶縁層２６上に各別に配置されている。一対のゲート配線層２７１は、方向ｘに延びる帯状である。一対の検出配線層２７２は、一対の絶縁層２６上に各別に配置されている。一対の検出配線層２７２は、方向ｘに延びる帯状である。ゲート配線層２７１および検出配線層２７２は、各絶縁層２６上において、並んで配置されている。ゲート配線層２７１および検出配線層２７２は、たとえば、銅または銅合金からなる金属箔により構成される。
　図１および図２に示すように、第１入力端子３１および第２入力端子３２は、方向ｘの一方側に位置する。第１入力端子３１および第２入力端子３２は、方向ｙにおいて互いに離間している。第１入力端子３１および第２入力端子３２には、電力変換対象となる直流電力（電圧）が入力される。第１入力端子３１は、正極（Ｐ端子）である。第２入力端子３２は、負極（Ｎ端子）である。第１入力端子３１および第２入力端子３２は、金属板により構成される。当該金属板の構成材料は、銅または銅合金である。
　第１入力端子３１の方向ｘの他方側の端部には、階段状に屈曲形成された屈曲部３１１が設けられている。この屈曲部３１１が、ハンダ接合または超音波接合などにより第１導電部２０１の主面２０Ａに接続されている。これにより、第１入力端子３１は、第１導電部２０１に導通している。第２入力端子３２の方向ｘの他方側に端部には、階段状に屈曲形成された屈曲部３２１が設けられている。この屈曲部３２１が、ハンダ接合または超音波接合などにより第３導電部２０３の主面２０Ａに接続されている。これにより、第２入力端子３２は、第３導電部２０３に導通している。
　図１および図２に示すように、第１出力端子３３および第２出力端子３４は、方向ｘの他方側に位置する。第１出力端子３３および第２出力端子３４は、方向ｙにおいて互いに離間している。第１出力端子３３および第２出力端子３４から、複数の半導体素子４０により電力変換された交流電力（電圧）が出力される。第１出力端子３３および第２出力端子３４は、金属板により構成される。当該金属板の構成材料は、銅または銅合金である。第１出力端子３３および第２出力端子３４の方向ｘの一方側の端部には、階段状に屈曲形成された屈曲部３３１および屈曲部３４１が設けられている。当該屈曲部３３１および屈曲部３４１が、ハンダ接合または超音波接合などにより第２導電部２０２の主面２０Ａに接続されている。これにより、第１出力端子３３および第２出力端子３４は、第２導電部２０２に導通している。なお、図示した例では２つの出力端子（第１出力端子３３および第２出力端子３４）を具備する構成であるが、これらをまとめて１つの出力端子を備える構成としてもよい。
　一対のゲート端子３５および一対の検出端子３６は、一対のゲート配線層２７１および一対の検出配線層２７２にそれぞれ対応して配置されている。一対のゲート端子３５および一対の検出端子３６は、金属板により構成されており、各々が方向ｙに延びる。当該金属板の構成材料は、銅または銅合金である。
　一対のゲート端子３５および一対の検出端子３６の各々の端部は、階段状に屈曲形成されている。各ゲート端子３５の端部は、ハンダ接合または超音波接合などにより、対応するゲート配線層２７１に接続されている。各検出端子３６の端部は、ハンダ接合または超音波接合などにより、対応する検出配線層２７２に接続されている。
　半導体素子４０は、たとえば、炭化ケイ素（ＳｉＣ）を主とする半導体材料を用いて構成されたＭＯＳＦＥＴ（Metal-Oxide-Semiconductor Field-Effect Transistor）である。半導体素子４０は、ＭＯＳＦＥＴに限らずＭＩＳＦＥＴ（Metal-Insulator-Semiconductor Field-Effect Transistor）を含む電界効果トランジスタや、ＩＧＢＴ（Insulated Gate Bipolar Transistor）のようなバイポーラトランジスタでもよい。半導体装置Ａ１０の説明においては、半導体素子４０はスイッチング素子であり、ｎチャンネル型のＭＯＳＦＥＴである場合を対象とする。
　図５に示すように、半導体素子４０は、素子本体４１、主面電極４２、裏面電極４３およびゲート電極（図示略）を有する。素子本体４１は、素子主面４１１および素子裏面４１２を有する。素子主面４１１および素子裏面４１２は、方向ｚにおいて互いに反対側を向く。素子主面４１１は、方向ｚにおいて導電部２０の主面２０Ａと同じ側を向く。このため、素子裏面４１２は、主面２０Ａに対向している。
　図５に示すように、主面電極４２は、素子主面４１１に設けられている。主面電極４２には、素子本体４１の内部からソース電流が流れる。裏面電極４３は、素子裏面４１２に設けられている。裏面電極４３は、たとえば、銀、またはニッケル、銀など複数種の金属層が積層された構成とされる。裏面電極４３には、素子本体４１の内部に向けてドレイン電流が流れる。裏面電極４３は、導電性接合材４９により導電部２０の主面２０Ａに電気的に接合されている。前記ゲート電極は、素子主面４１１に設けられ、当該ゲート電極には半導体素子４０を駆動するためのゲート電圧が印加される。
　導電性接合材４９は、導電部２０と半導体素子４０との間に介在している。導電性接合材４９は方向ｚに視て半導体素子４０よりも大きいサイズであり、方向ｚに視て半導体素子４０の全体が導電性接合材４９と重なっている。導電性接合材４９は、複数の金属層が積層された構成である。図５および図６に示すように、半導体装置Ａ１０において、導電性接合材４９は、金属基層４９０、第１接合層４９１および第２接合層４９２を含む。図７～図１０に示すように、導電性接合材４９は、さらに第１中間層４９３および第２中間層４９４を含む。
　金属基層４９０は、導電性接合材４９の体積の大半を占めている。金属基層４９０の厚さは、たとえば１０～２００μｍ程度である。金属基層４９０の構成材料は、たとえばアルミニウム（Ａｌ）、チタン（Ｔｉ）、亜鉛（Ｚｎ）、ハフニウム（Ｈｆ）およびエルビウム（Ｅｒ）の少なくともいずれかを含む。本実施形態では、金属基層４９０の構成材料はアルミニウムを含む。金属基層４９０の構成材料がアルミニウムである場合、当該金属基層４９０のヤング率は、７０．３ＧＰａである。
　第１接合層４９１は、金属基層４９０と半導体素子４０との間に介在している。本実施形態では、図７および図８に示すように、第１接合層４９１は第１中間層４９３上に形成されている。第１接合層４９１の構成材料は、たとえば銀（Ａｇ）、銅（Ｃｕ）および金（Ａｕ）の少なくともいずれかを含む。本実施形態では、第１接合層４９１の構成材料は銀を含む。第１接合層４９１は、金属の固相拡散により半導体素子４０（裏面電極４３）に接合されている。裏面電極４３の構成材料は、たとえば銀を含む。裏面電極４３の厚さは第１接合層４９１の厚さよりも小であり、裏面電極４３は、たとえばスパッタリング法により形成される。
　第２接合層４９２は、金属基層４９０と導電部２０との間に介在している。本実施形態では、図９および図１０に示すように、第２接合層４９２は第２中間層４９４上に形成されている。第２接合層４９２の構成材料は、たとえば銀、銅および金の少なくともいずれかを含む。本実施形態では、第２接合層４９２の構成材料は銀を含む。第２接合層４９２は、金属の固相拡散により導電部２０（導体層２５）に接合されている。本実施形態では、導電部２０は基材２４および当該基材２４上に形成された導体層２５を備えており、第２接合層４９２と導体層２５とが固相拡散により接合される。導体層２５の構成材料は、たとえば銀を含む。
　第１接合層４９１および第２接合層４９２の各々の構成材料が銀である場合、当該第１接合層４９１および第２接合層４９２の各々のヤング率は、８２．７ＧＰａである。このため、先述した金属基層４９０のヤング率（７０．３ＧＰａ）が示すとおり、金属基層４９０のヤング率は、第１接合層４９１および第２接合層４９２の各々のヤング率よりも小である。第１接合層４９１および第２接合層４９２の各々の厚さは、たとえば２～５μｍ程度であり、金属基層４９０の厚さよりも小である。
　図７および図８に示すように、第１中間層４９３は、金属基層４９０と第１接合層４９１との間に介在している。本実施形態では、第１中間層４９３は金属基層４９０上に形成されている。図９および図１０に示すように、第２中間層４９４は、金属基層４９０と第２接合層４９２との間に介在している。本実施形態では、第２中間層４９４は金属基層４９０上に形成されている。第１中間層４９３および第２中間層４９４の各々の構成材料は、たとえばニッケル（Ｎｉ）を含む。第１中間層４９３および第２中間層４９４の各々の構成材料がニッケルである場合、当該第１中間層４９３および第２中間層４９４の各々のヤング率は、２００ＧＰａである。第１中間層４９３および第２中間層４９４の各々の厚さは、たとえば０．２～２μｍ程度であり、第１接合層４９１や第２接合層４９２の厚さよりも小である。
　前記導電性接合材４９の積層構造は、たとえばスパッタリング法やめっき処理により形成される。スパッタリング法の場合、たとえば金属基層４９０に対応するアルミニウムのシート材の表裏両面に、第１中間層４９３および第１接合層４９１、ならびに第２中間層４９４および第２接合層４９２に対応する金属層を順次形成する。めっき処理の場合、前記アルミニウムのシート材の表面全体に、第１中間層４９３、第２中間層４９４の構成材料によるめっき層と、第１接合層４９１、第２接合層４９２の構成材料によるめっき層とを順次形成する。このようにして作製されたシート状の積層構造物をカットすることにより、複数個の導電性接合材４９が得られる。
　次に、導電部２０と半導体素子４０とを接合する方法について説明する。
　まず、導電部２０の主面２０Ａ上に、導電性接合材４９および半導体素子４０を積み重ねる。このとき、導電部２０（導体層２５）と第２接合層４９２、および第１接合層４９１と半導体素子４０（裏面電極４３）が、それぞれ互いに接触する。
　次いで、導電部２０（導体層２５）と第２接合層４９２、および第１接合層４９１と半導体素子４０（裏面電極４３）を、固相拡散により互いに接合させる。固相拡散による接合は、高温高圧下で行う。固相拡散による接合は、たとえば図１１に示すように、積層配置された半導体素子４０を平坦な押圧部材９によって押圧しつつ行う。固相拡散させるための条件として、たとえば温度が３５０℃程度、かつ圧力が４０ＭＰａ程度である。ただし、固相拡散させるための温度圧力条件は、適宜選択することが可能である。当該固相拡散接合は、大気中で行う場合を想定しているが、真空中で行ってもよい。
　導電性接合材４９によって導電部２０と半導体素子４０とを固相拡散により接合すると、導電性接合材４９のうち方向ｚに視て半導体素子４０と重なる部位は、半導体素子４０側から押圧力を受けることで僅かに窪む。そうすると、図６にも表れているように、導電性接合材４９において、方向ｚに視て半導体素子４０と重なる部位と、方向ｚに視て半導体素子４０と重ならない部位との境界部分に段差が形成される。
　図６、図８および図１０に示すように、方向ｚに視て導電性接合材４９が半導体素子４０に重なる部位と重ならない部位の境界付近では、第１接合層４９１と裏面電極４３（半導体素子４０）との境界面、および第２接合層４９２と導体層２５（導電部２０）との境界面において、空隙４９５が生じ得る。その一方、図６、図７および図９に示すように、方向ｚに視て導電性接合材４９が半導体素子４０に重なる部位と重ならない部位の境界部分よりも少し内側（方向ｚに視て導電性接合材４９が半導体素子４０に重なる部位）においては、第１接合層４９１と裏面電極４３（半導体素子４０）との境界面および第２接合層４９２と導体層２５（導電部２０）との境界面が視認困難である。このことは、第１接合層４９１と裏面電極４３、および第２接合層４９２と導体層２５について、いずれも構成材料が銀であって、同種金属の固相拡散接合であることに起因する。図８および図１０の拡大図では、第１接合層４９１と裏面電極４３（半導体素子４０）との境界面および第２接合層４９２と導体層２５（導電部２０）との境界面を模式的に点線で表す。このようなことから理解できるように、第１接合層４９１および裏面電極４３、ならびに第２接合層４９２および導体層２５は、それぞれ固相拡散により強固に接合された状態となる。固相拡散による強固な接合状態は、たとえば接合部断面の拡大写真（たとえばＳＥＭ写真）により確認することができる。
　複数の半導体素子４０は、複数の第１素子４０１と、複数の第２素子４０２とを含む。図１、図２および図４に示すように、複数の第１素子４０１は、第１導電部２０１の主面２０Ａに電気的に接合されている。複数の第１素子４０１は、方向ｘに沿って所定の間隔で配列されている。複数の第１素子４０１は、半導体装置Ａ１０の上アーム回路を構成している。
　図１～図４に示すように、複数の第２素子４０２は、第２導電部２０２の主面２０Ａに電気的に接合されている。複数の第２素子４０２は、方向ｘに沿って所定の間隔で配列されている。複数の第２素子４０２は、半導体装置Ａ１０の下アーム回路を構成している。
　図２に示すように、複数の第１素子４０１は、複数の第２素子４０２に対し、方向ｘに沿ってずれた状態で設けられている。図に示す例においては、３つの第１素子４０１および３つの第２素子４０２が設けられている。第１素子４０１および第２素子４０２のそれぞれの個数は本構成に限定されず、たとえば半導体装置Ａ１０に要求される性能に応じて自在に設定可能である。
　複数の第１素子４０１の主面電極４２の各々と、第２導電部２０２の主面２０Ａとは、たとえばワイヤ７０ａを介して接続されている（簡略化のため、図２では１本のワイヤ７０ａのみ示す）。これにより、複数の第１素子４０１の各主面電極４２は、前記ワイヤを介して第２導電部２０２に導通している。したがって、第１出力端子３３は、第２導電部２０２および前記ワイヤを介して複数の第１素子４０１の各主面電極４２に導通している。第１出力端子３３は、複数の第１素子４０１のソース端子に相当する。
　複数の第１素子４０１の裏面電極４３の各々と、第１導電部２０１とは、導電性接合材４９を介して導通している。したがって、第１入力端子３１は、第１導電部２０１を介して複数の第１素子４０１の各裏面電極４３に導通している。第１入力端子３１は、複数の第１素子４０１のドレイン端子に相当する。
　複数の第２素子４０２の主面電極４２の各々と、第３導電部２０３の主面２０Ａとは、たとえばワイヤ７０ｂを介して接続されている（簡略化のため、図２では１本のワイヤ７０ｂのみ示す）。これにより、複数の第２素子４０２の各主面電極４２は、前記ワイヤを介して第３導電部２０３に導通している。したがって、第２入力端子３２は、第３導電部２０３および前記ワイヤを介して複数の第２素子４０２の各主面電極４２に導通している。第２入力端子３２は、複数の第２素子４０２のソース端子に相当する。
　複数の第２素子４０２の裏面電極４３の各々と、第２導電部２０２とは、導電性接合材４９を介して導通している。したがって、第２出力端子３４は、第２導電部２０２を介して複数の第２素子４０２の各裏面電極４３に導通している。第２出力端子３４は、複数の第２素子４０２のドレイン端子に相当する。
　半導体装置Ａ１０においては、図示しないゲートワイヤおよび検出ワイヤを備える。前記ゲートワイヤは、複数の第１素子４０１および複数の第２素子４０２それぞれに対応して複数設けられている。第１素子４０１に対応する各ゲートワイヤは、第１素子４０１のゲート電極（図示略）と、第１導電部２０１の上に位置する一方のゲート配線層２７１とに接続されている。第２素子４０２に対応する各ゲートワイヤは、第２素子４０２のゲート電極（図示略）と、第２導電部２０２の上に位置する他方のゲート配線層２７１とに接続されている。そして、一対のゲート配線層２７１に接続される一対のゲート端子３５の各々には、複数の第１素子４０１および複数の第２素子４０２のどちらかを駆動させるためのゲート電圧が印加される。
　前記検出ワイヤは、複数の第１素子４０１および複数の第２素子４０２それぞれに対応して複数設けられている。第１素子４０１に対応する各検出ワイヤは、第１素子４０１の主面電極４２と、第１導電部２０１の上に位置する一方の検出配線層２７２とに接続されている。第２素子４０２に対応する各検出ワイヤは、第２素子４０２の主面電極４２と、第２導電部２０２の上に位置する他方の検出配線層２７２とに接続されている。そして、一対の検出配線層２７２に接続される一対の検出端子３６の各々から、複数の第１素子４０１および複数の第２素子４０２のどちらかに該当する複数の主面電極４２に印加される電圧（ソース電流に対応した電圧）が印加される。
　封止樹脂８０は、図２～図４に示すように、支持基板１０、第１入力端子３１、第２入力端子３２、第１出力端子３３および第２出力端子３４のそれぞれの一部と、導電部２０および複数の半導体素子４０を覆っている。封止樹脂８０は、一対の絶縁層２６、一対のゲート配線層２７１、一対の検出配線層２７２および前記のワイヤ類を覆っている。さらに、封止樹脂８０は、一対のゲート端子３５および一対の検出端子３６のそれぞれの一部を覆っている。封止樹脂８０の構成材料は、たとえば黒色のエポキシ樹脂である。
　図３および図４に示すように、封止樹脂８０は、樹脂主面８１および樹脂底面８２を有する。樹脂主面８１は、方向ｚにおいて支持基板１０の支持面１０Ａと同じ側を向く。樹脂底面８２は、方向ｚにおいて樹脂主面８１とは反対側を向く。樹脂底面８２から底板１３（支持基板１０）の底面１０Ｂが露出している。樹脂底面８２は、底板１３を囲む枠状である。なお、一対のゲート端子３５および一対の検出端子３６において封止樹脂８０から露出する部分は、半導体装置Ａ１０の使用形態に応じて適宜屈曲させられる。
　次に、半導体装置Ａ１０の作用効果について説明する。
　半導体装置Ａ１０において、導電部２０と半導体素子４０との間に介在する導電性接合材４９は、金属基層４９０、第１接合層４９１および第２接合層４９２を含み、金属基層４９０が第１接合層４９１および第２接合層４９２の間に介在する。このような構成によれば、第１接合層４９１と半導体素子４０（裏面電極４３）とを接合し、また第２接合層４９２と導電部２０（導体層２５）とを接合する際に、中間の金属基層４９０がクッションとして機能する。これにより、第１接合層４９１と半導体素子４０（裏面電極４３）の境界部、および第２接合層４９２と導電部２０（導体層２５）の境界部のそれぞれに作用する押圧力が均一化される。また、第１接合層４９１と半導体素子４０（裏面電極４３）、および第２接合層４９２と導電部２０（導体層２５）が、それぞれ固相拡散接合により強固に接合される。結果として、半導体装置Ａ１０の使用時に半導体素子４０で発生した熱によって導電性接合材４９が繰り返し高温状態に晒されても、導電性接合材４９における接合状態の変化（劣化）が抑制される。したがって、導電性接合材４９を具備する半導体装置Ａ１０によれば、半導体素子４０と導電部２０との接合状態に対する信頼性を向上させることができる。
　本実施形態において、金属基層４９０のヤング率は、第１接合層４９１および第２接合層４９２の各々の構成材料のヤング率よりも小である。このような構成によれば、導電性接合材４９を半導体素子４０（裏面電極４３）と導電部２０（導体層２５）とに固相拡散により接合する際、相対的に軟らかい金属基層４９０によって応力が緩和され、接合境界部の平滑化を図ることができる。これにより、第１接合層４９１と半導体素子４０（裏面電極４３）、および第２接合層４９２と導電部２０（導体層２５）は、固相拡散によってより強固に接合される。
　本実施形態では金属基層４９０の厚さが第１接合層４９１および第２接合層４９２の各々の厚さよりも大である。これにより、固相拡散による接合の際、第１接合層４９１と半導体素子４０（裏面電極４３）の境界部、および第２接合層４９２と導電部２０（導体層２５）の境界部のそれぞれに作用する押圧力がより均一となる。したがって、第１接合層４９１と半導体素子４０（裏面電極４３）、および第２接合層４９２と導電部２０（導体層２５）は、それぞれより強固な導通接合状態となり得る。
　導電性接合材４９は、第１中間層４９３および第２中間層４９４を含む。第１中間層４９３は金属基層４９０と第１接合層４９１との間に介在し、第２中間層４９４は金属基層４９０と第２接合層４９２との間に介在する。第１中間層４９３および第２中間層４９４を有する構成は、固相拡散による接合の際、第１接合層４９１と半導体素子４０（裏面電極４３）の境界部、および第２接合層４９２と導電部２０（導体層２５）の境界部それぞれに作用する押圧力の均一化を図るのに適している。また、第１中間層４９３および第２中間層４９４の各々の構成材料がニッケルであると、第１中間層４９３および第２中間層４９４のヤング率が比較的大きい。この場合、固相拡散接合の際に接合境界部に作用する押圧力がより均一になり、第１接合層４９１と半導体素子４０（裏面電極４３）、および第２接合層４９２と導電部２０（導体層２５）は、より強固な導通接合状態となり得る。
　本実施形態では、第１接合層４９１および第２接合層４９２の各々の構成材料は銀を含む。このような構成によれば、導電性接合材４９を用いた固相拡散による接合の際、第１接合層４９１および第２接合層４９２の酸化が抑制され、良好な固相拡散接合が可能となる。また、第１接合層４９１および第２接合層４９２と接合される裏面電極４３および導体層２５の各々についても銀を含むため、より良好な固相拡散接合が可能となる。
　図３および図４に示され、導電部２０と支持基板１０（第２支持板１２）との間に介在する接合部材１９について、具体的な構成は特に限定されないが、先述の導電性接合材４９と同様の構成としてもよい。接合部材１９は、たとえば複数の金属層が積層された構成であり、固相拡散により接合された複数の金属層を含む。接合部材１９は、導電性接合材４９と同様に、金属基層、第１接合層、第２接合層、第１中間層および第２中間層を含んでいてもよい。これら金属基層、第１接合層、第２接合層、第１中間層および第２中間層の具体的構成は、導電性接合材４９における金属基層４９０、第１接合層４９１、第２接合層４９２、第１中間層４９３および第２中間層４９４とそれぞれ同様である。この場合、接合部材１９の第１接合層が金属の固相拡散により導電部２０に接合され、接合部材１９の第２接合層が金属の固相拡散により支持基板１０（第２支持板１２）に接合される。
　図１２～図２０に基づき、第２実施形態に係る半導体装置Ａ２０について説明する。図示された半導体装置Ａ２０は、支持部材１、導電部２、半導体レーザ素子４、スイッチング素子５、コンデンサ６、第１ワイヤ７１、第２ワイヤ７２、第３ワイヤ７３および透光樹脂８を備える。半導体装置Ａ２０は、たとえば２次元距離計測の一例であるＬｉＤＡＲのパルスレーザ光源として用いられるが、本開示がこれに限定されるわけではない。
　図１２に示すように、半導体装置Ａ２０は、方向ｚに視て矩形状である。図１２においては、透光樹脂８を省略している。図１２において、括弧書きの符号８４～８７は、それぞれ透光樹脂８の４つの側面（後述する樹脂第１面、樹脂第２面、樹脂第３面および樹脂第４面）を示している。
　支持部材１は、導電部２を介して半導体レーザ素子４およびスイッチング素子５を支持している。支持部材１は、絶縁材料からなる。支持部材１の材質は特に限定されず、たとえばエポキシ樹脂やガラスエポキシ樹脂が挙げられる。以降の説明においては、支持部材１がセラミックスからなる場合を例に説明する。本実施形態においては、支持部材１は、支持面１Ａ、底面１Ｂ、第１面１４、第２面１５、第３面１６および第４面１７を有しており、方向ｚに視てたとえば矩形状である。
　支持面１Ａは、方向ｚ一方側を向く面であり、図示された例においては、平面である。底面１Ｂは、支持面１Ａとは反対側の方向ｚ他方側を向く面であり、図示された例においては、平面である。第１面１４は、方向ｘ一方側を向く面であり、図示された例においては、平面である。第２面１５は、第１面１４とは反対側の方向ｘ他方側を向く面であり、図示された例においては、平面である。第３面１６は、方向ｙ一方側を向く面であり、図示された例においては、平面である。第４面１７は、第３面１６とは反対側の方向ｘ他方側を向く面であり、図示された例においては、平面である。
　導電部２は、半導体レーザ素子４およびスイッチング素子５等への導通経路を構成する部位である。導電部２の材質は特に限定されず、銅（Ｃｕ），ニッケル（Ｎｉ），チタン（Ｔｉ），金（Ａｕ）等の金属が挙げられる。また、導電部２の形成手法は特に限定されず、図示された例においては、たとえばめっきによって形成される。
　図示された導電部２は、主面部２１、底面部２２および連絡部２３を含む。
　主面部２１は、支持部材１の支持面１Ａ上に配置されている。主面部２１は、方向ｚを厚さ方向とする薄板状である。主面部２１は、複数の部分を含み、図示された例においては、第１主面部２１１、第２主面部２１２、第３主面部２１３および第４主面部２１４を含んでいる。
　図１２および図１４に示すように、第１主面部２１１は、支持部材１の方向ｙにおける第４面１７側に配置されている。第１主面部２１１は、方向ｚ一方側を向く主面２１１Ａを有する。第１主面部２１１の形状は特に限定されないが、図示された例においては、方向ｘを長手方向とする長矩形に凸部２１１Ｂが組み合わされた形状である。凸部２１１Ｂは、第１主面部２１１の方向ｙにおける第３面１６側の部分が、方向ｙにおいて第３面１６側に突出した部位である。凸部２１１Ｂは、第１主面部２１１の方向ｘ中央に位置する。第１主面部２１１は、第１面１４、第２面１５および第４面１７から離間している。
　図１２および図１４に示すように、第２主面部２１２は、第１主面部２１１よりも方向ｙにおいて第３面１６寄りに配置されている。第２主面部２１２は、方向ｚ一方側を向く主面２１２Ａを有する。第２主面部２１２の方向ｘ寸法は、第１主面部２１１の方向ｘ寸法と略同じである。第２主面部２１２の方向ｙ寸法は、第１主面部２１１の方向ｙ寸法よりも大きい。第２主面部２１２は、方向ｙに視て第１主面部２１１と重なる。第２主面部２１２の形状は特に限定されないが、図示された例においては、矩形状の一部が凹んだ形状である。第２主面部２１２は、凹部２１２Ｂを有する。凹部２１２Ｂは、第２主面部２１２の方向ｙにおける第４面１７側の部分が、方向ｙにおいて第３面１６側に凹んだ部位である。凹部２１２Ｂは、第２主面部２１２の方向ｘ中央に位置する。また、凹部２１２Ｂは、方向ｙに視て凸部２１１Ｂと重なる。第２主面部２１２の面積は、第１主面部２１１、第３主面部２１３および第４主面部２１４よりも大きい。第２主面部２１２は、第１面１４および第２面１５から離間している。
　図１２および図１４に示すように、第３主面部２１３は、第２主面部２１２よりも方向ｙにおいて第３面１６寄りに配置されている。第３主面部２１３は、支持部材１の方向ｘにおける第１面１４側であって、方向ｙにおける第３面１６側に配置されている。第３主面部２１３は、方向ｚ一方側を向く主面２１３Ａを有する。第３主面部２１３の形状は特に限定されず、図示された例においては、方向ｘを長手方向とする長矩形状である。図示された第３主面部２１３は、第１面１４および第３面１６から離間している。
　図１２に示すように、第４主面部２１４は、第３主面部２１３に対して方向ｘにおいて第２面１５寄りに位置しており、第２主面部２１２に対して方向ｙにおいて第３面１６寄りに位置している。第４主面部２１４は、方向ｚ一方側を向く主面２１４Ａを有する。第４主面部２１４の形状は特に限定されず、図示された例においては、矩形状である。図示された例においては、第４主面部２１４の方向ｙ寸法は、第３主面部２１３の方向ｙ寸法と略同じである。また、第４主面部２１４の方向ｘ寸法は、第３主面部２１３の方向ｘ寸法よりも小さい。第４主面部２１４の面積は、第３主面部２１３の面積よりも小さい。第４主面部２１４は、方向ｘに視て第３主面部２１３と重なる。また、第４主面部２１４は、方向ｙに視て第１主面部２１１および第２主面部２１２と重なる。図示された第４主面部２１４は、第２面１５および第３面１６から離間している。
　図１３および図１４に示すように、底面部２２は、支持部材１の底面１Ｂ上に配置されている。図示された例においては、底面部２２は、第１底面部２２１、第２底面部２２２、第３底面部２２３および第４底面部２２４を含む。本実施形態においては、底面部２２は、半導体装置Ａ２０を回路基板（図示略）等に実装する際の実装端子として用いられる。
　図１３および図１４に示すように、第１底面部２２１は、支持部材１の方向ｙにおける第４面１７側に配置されている。第１底面部２２１の形状は特に限定されず、図示された例においては、方向ｘを長手方向とする長矩形状である。図示された第１底面部２２１は、第１面１４、第２面１５および第４面１７から離間している。
　図１３および図１４に示すように、第２底面部２２２は、第１底面部２２１よりも方向ｙにおいて第３面１６寄りに配置されている。第１底面部２２１の方向ｘ寸法は、第１底面部２２１の方向ｘ寸法と略同じである。第２底面部２２２の方向ｙ寸法は、第１底面部２２１の方向ｙ寸法よりも大きい。第２底面部２２２は、方向ｙに視て第１底面部２２１と重なる。第２底面部２２２の形状は特に限定されず、図示された例においては、矩形状である。第２底面部２２２の面積は、第１底面部２２１、第３底面部２２３および第４底面部２２４よりも大きい。図示された第２底面部２２２は、第１面１４および第２面１５から離間している。
　図１３および図１４に示すように、第３底面部２２３は、第２底面部２２２よりも方向ｙにおいて第３面１６寄りに配置されている。第３底面部２２３は、支持部材１の方向ｘにおける第１面１４側であって、方向ｙにおける第３面１６側に配置されている。第３底面部２２３の形状は特に限定されず、図示された例においては、方向ｘを長手方向とする長矩形状である。図示された第３底面部２２３は、第１面１４および第３面１６から離間している。
　図１３に示すように、第４底面部２２４は、第３底面部２２３に対して方向ｘにおいて第２面１５寄りに位置しており、第２底面部２２２に対して方向ｙにおいて第３面１６寄りに位置している。第４底面部２２４の形状は特に限定されず、図示された例においては、矩形状である。図示された例においては、第４底面部２２４の方向ｙ寸法は、第３底面部２２３の方向ｙ寸法と略同じである。また、第４底面部２２４の方向ｘ寸法は、第３底面部２２３の方向ｘ寸法よりも小さい。第４底面部２２４の面積は、第３底面部２２３の面積よりも小さい。第４底面部２２４は、方向ｘに視て第３底面部２２３と重なる。また、第４底面部２２４は、方向ｙに視て第１底面部２２１および第２底面部２２２と重なる。図示された第４底面部２２４は、第２面１５および第３面１６から離間している。
　連絡部２３は、主面部２１の各部と底面部２２の各部とを導通させる。連絡部２３の具体的構成は特に限定されず、図示された例においては、図１２および図１３に示すように、第１連絡部２３１、複数の第２連絡部２３２、複数の第３連絡部２３３および第４連絡部２３４を含む。第１連絡部２３１、第２連絡部２３２、第３連絡部２３３および第４連絡部２３４の個数は、特に限定されない。
　第１連絡部２３１、第２連絡部２３２、第３連絡部２３３および第４連絡部２３４の具体的構成は特に限定されず、本実施形態においては、図１２～図１４に示すように、方向ｚ視における支持部材１の内方領域（第１面１４、第２面１５、第３面１６および第４面１７から離間した領域）において、支持部材１を厚さ方向に貫通している。このような、第１連絡部２３１、第２連絡部２３２、第３連絡部２３３および第４連絡部２３４は、支持部材１に形成された貫通孔の内面に、金属からなるめっき層を形成することによって設けられており、支持面１Ａおよび底面１Ｂに到達している。図示された例においては、第１連絡部２３１、第２連絡部２３２、第３連絡部２３３および第４連絡部２３４の内部は、樹脂が充填された構成であるが、たとえば金属が充填された構成であってもよい。
　図１２～図１４に示すように、第１連絡部２３１は、第１主面部２１１と第１底面部２２１とに繋がっており、第１主面部２１１と第１底面部２２１とを連結している。
　図１２～図１４に示すように、複数の第２連絡部２３２は、第２主面部２１２と第２底面部２２２とに繋がっており、第２主面部２１２と第２底面部２２２とを連結している。図示された例においては、複数の第２連絡部２３２は、方向ｘおよび方向ｙに沿ったマトリクス状に配置されている。
　図１２～図１４に示すように、複数の第３連絡部２３３は、第３主面部２１３と第３底面部２２３とに繋がっており、第３主面部２１３と第３底面部２２３とを連結している。本実施形態においては、複数の第３連絡部２３３は、方向ｘに沿って配列されている。複数の第３連絡部２３３は、方向ｙにおいて第３面１６寄りに配置されている。
　図１２および図１３に示すように、第４連絡部２３４は、第４主面部２１４と第４底面部２２４とに繋がっており、第４主面部２１４と第４底面部２２４とを連結している。図示された例とは異なり、複数の第４連絡部２３４を有する構成であってもよい。
　半導体レーザ素子４は、半導体装置Ａ２０の光源であり、半導体からなる活性層等を含む。本実施形態においては、図１４に示すように、半導体レーザ素子４は、素子本体４１、第１レーザ電極４４および第２レーザ電極４５を有する。素子本体４１は、素子主面４１１および素子裏面４１２を有する。素子主面４１１および素子裏面４１２は、方向ｚにおいて互いに反対側を向く。素子主面４１１は、方向ｚにおいて主面２１１Ａと同じ側を向く面である。素子裏面４１２は、主面２１１Ａに対向している。
　第１レーザ電極４４は、素子主面４１１上に配置されている。第２レーザ電極４５は、素子裏面４１２上に配置されている。図１２においては、第１レーザ電極４４を省略している。本実施形態においては、第１レーザ電極４４がアノード電極であり、第２レーザ電極４５がカソード電極である。第２レーザ電極４５は、たとえば、銀、またはニッケル、銀など複数種の金属層が積層された構成とされる。
　図１２および図１４に示すように、本実施形態においては、半導体レーザ素子４は、第１主面部２１１上に配置されている。具体的には、半導体レーザ素子４の第２レーザ電極４５が導電性接合材４９によって第１主面部２１１の主面２１１Ａに電気的に接合されている。図示された例においては、半導体レーザ素子４は、方向ｙに視て凸部２１１Ｂおよび凹部２１２Ｂと重なっている。半導体レーザ素子４は、方向ｙにおいて第４面１７が向く側にレーザ光Ｌを出射する。また、図示された例においては、半導体レーザ素子４は、方向ｚに視て第１連絡部２３１と重なっている。
　導電性接合材４９は、導電部２（主面部２１の第１主面部２１１）と半導体レーザ素子４との間に介在している。導電性接合材４９は方向ｚに視て半導体レーザ素子４よりも大きいサイズであり、方向ｚに視て半導体レーザ素子４の全体が導電性接合材４９と重なっている。導電性接合材４９は、複数の金属層が積層された構成である。図１５および図１６に示すように、半導体装置Ａ２０において、導電性接合材４９は、金属基層４９０、第１接合層４９１および第２接合層４９２を含む。本実施形態においても、図１７～図２０に示すように、導電性接合材４９は、さらに第１中間層４９３および第２中間層４９４を含む。
　金属基層４９０は、導電性接合材４９の体積の大半を占めている。金属基層４９０の厚さは、たとえば１０～２００μｍ程度である。金属基層４９０の構成材料は、たとえばアルミニウム、チタン、亜鉛、ハフニウムおよびエルビウムの少なくともいずれかを含む。本実施形態では、金属基層４９０の構成材料はアルミニウムを含む。金属基層４９０の構成材料がアルミニウムである場合、当該金属基層４９０のヤング率は、７０．３ＧＰａである。
　第１接合層４９１は、金属基層４９０と半導体レーザ素子４との間に介在している。本実施形態では、図１７および図１８に示すように、第１接合層４９１は第１中間層４９３上に形成されている。第１接合層４９１の構成材料は、たとえば銀、銅および金の少なくともいずれかを含む。本実施形態では、第１接合層４９１の構成材料は銀を含む。第１接合層４９１は、金属の固相拡散により半導体レーザ素子４（第２レーザ電極４５）に接合されている。第２レーザ電極４５の構成材料は、たとえば銀を含む。第２レーザ電極４５の厚さは第１接合層４９１の厚さよりも小であり、第２レーザ電極４５は、たとえばスパッタリング法により形成される。
　第２接合層４９２は、金属基層４９０と導電部２（第１主面部２１１）との間に介在している。本実施形態では、図１９および図２０に示すように、第２接合層４９２は第２中間層４９４上に形成されている。第２接合層４９２の構成材料は、たとえば銀、銅および金の少なくともいずれかを含む。本実施形態では、第２接合層４９２の構成材料は銀を含む。第２接合層４９２は、金属の固相拡散により導電部２（第１主面部２１１）に接合されている。
　第１接合層４９１および第２接合層４９２の各々の構成材料が銀である場合、当該第１接合層４９１および第２接合層４９２の各々のヤング率は、８２．７ＧＰａである。このため、先述した金属基層４９０のヤング率（７０．３ＧＰａ）が示すとおり、金属基層４９０のヤング率は、第１接合層４９１および第２接合層４９２の各々のヤング率よりも小である。また、第１接合層４９１および第２接合層４９２の各々の厚さは、たとえば２～５μｍ程度であり、金属基層４９０の厚さよりも小である。
　図１７および図１８に示すように、第１中間層４９３は、金属基層４９０と第１接合層４９１との間に介在している。本実施形態では、第１中間層４９３は金属基層４９０上に形成されている。図１９および図２０に示すように、第２中間層４９４は、金属基層４９０と第２接合層４９２との間に介在している。本実施形態では、第２中間層４９４は金属基層４９０上に形成されている。第１中間層４９３および第２中間層４９４の各々の構成材料は、たとえばニッケルを含む。第１中間層４９３および第２中間層４９４の各々の構成材料がニッケルである場合、当該第１中間層４９３および第２中間層４９４の各々のヤング率は、２００ＧＰａである。また、第１中間層４９３および第２中間層４９４の各々の厚さは、たとえば０．２～２μｍ程度であり、第１接合層４９１や第２接合層４９２の厚さよりも小である。
　前記導電性接合材４９の積層構造は、たとえばスパッタリング法やめっき処理により形成される。導電性接合材４９の形成方法は、たとえば先述の半導体装置Ａ１０における導電性接合材４９の場合と同様である。導電性接合材４９を用いて導電部２（第１主面部２１１）と半導体レーザ素子４とを接合する方法についても、先述の半導体装置Ａ１０において図１１を参照して説明した方法と同様である。
　導電性接合材４９によって導電部２と半導体レーザ素子４とを固相拡散により接合すると、導電性接合材４９のうち方向ｚに視て半導体レーザ素子４と重なる部位は、半導体レーザ素子４側から押圧力を受けることで僅かに窪む。すると、図１６にも表れているように、導電性接合材４９において、方向ｚに視て半導体レーザ素子４と重なる部位と、方向ｚに視て半導体レーザ素子４と重ならない部位との境界部分に段差が形成される。
　図１６、図１８および図２０に示すように、方向ｚに視て導電性接合材４９が半導体レーザ素子４に重なる部位と重ならない部位の境界付近では、第１接合層４９１と第２レーザ電極４５（半導体レーザ素子４）との境界面、および第２接合層４９２と第１主面部２１１（導電部２）との境界面において、空隙４９５が生じ得る。その一方、図１６、図１７および図１９に示すように、方向ｚに視て導電性接合材４９が半導体レーザ素子４に重なる部位と重ならない部位の境界部分よりも少し内側（方向ｚに視て導電性接合材４９が半導体レーザ素子４に重なる部位）においては、第１接合層４９１と第２レーザ電極４５（半導体レーザ素子４）との境界面および第２接合層４９２と第１主面部２１１（導電部２）との境界面に空隙が存在しない。このようなことから理解できるように、第１接合層４９１および第２レーザ電極４５、ならびに第２接合層４９２および第１主面部２１１は、それぞれ固相拡散により強固に接合された状態となる。
　スイッチング素子５は、半導体レーザ素子４への電流をＯＮ／ＯＦＦするための素子である。スイッチング素子５は、たとえばＳｉやＳｉＣ、あるいはＧａＮ等からなるＦＥＴ等のトランジスタである。スイッチング素子５がＳｉＣからなる場合、スイッチングの高速化を図るのに適している。スイッチング素子５は、図１２および図１４に示すように、素子本体５１、ゲート電極５２、ソース電極５３およびドレイン電極５４を有する。素子本体５１は、ＳｉやＳｉＣ等の半導体材料からなり、素子主面５１１および素子裏面５１２を有する。素子主面５１１は、方向ｚにおいて主面２１２Ａと同じ側を向く面である。素子裏面５１２は、方向ｚにおいて底面１Ｂと同じ側を向く面であり、主面２１２Ａに対向している。
　ゲート電極５２は、素子主面５１１上に配置されている。図示された例においては、ゲート電極５２は、方向ｘにおいて第２面１５寄りに配置されており、方向ｙにおいて第３面１６寄りに配置されている。ゲート電極５２の形状は特に限定されず、図示された例においては、方向ｚに視て矩形状である。
　ソース電極５３は、素子主面５１１上に配置されている。図示された例においては、ソース電極５３は、方向ｚに視てＬ字状であり、ゲート電極５２に対して方向ｘにおける第１面１４側の領域および方向ｙにおける第４面１７寄りの領域に配置されている。
　ドレイン電極５４は、素子裏面５１２上に配置されており、図示された例においては、素子裏面５１２の略全面を覆っている。
　図１２および図１４に示すように、本実施形態においては、スイッチング素子５は、第２主面部２１２上に配置されている。具体的には、スイッチング素子５のドレイン電極５４が導電性接合材５９によって第２主面部２１２の主面２１２Ａに電気的に接合されている。本実施形態においては、スイッチング素子５は、第２主面部２１２上において、方向ｘおける第１面１４寄りに配置されている。スイッチング素子５は、方向ｚに視て複数の第２連絡部２３２のすべてと重なっている。スイッチング素子５は、方向ｙに視て半導体レーザ素子４と重なる。
　導電性接合材５９は、導電部２（主面部２１の第２主面部２１２）とスイッチング素子５との間に介在している。導電性接合材５９は方向ｚに視てスイッチング素子５よりも大きいサイズであり、方向ｚに視てスイッチング素子５の全体が導電性接合材５９と重なっている。導電性接合材５９は、複数の金属層が積層された構成である。導電性接合材５９は、導電性接合材４９と同様に、金属基層、第１接合層、第２接合層、第１中間層および第２中間層を含む。これら金属基層、第１接合層、第２接合層、第１中間層および第２中間層の具体的構成は、導電性接合材４９における金属基層４９０、第１接合層４９１、第２接合層４９２、第１中間層４９３および第２中間層４９４とそれぞれ同様である。導電性接合材５９の第１接合層が金属の固相拡散によりスイッチング素子５（ドレイン電極５４）に接合されており、導電性接合材５９の第２接合層が金属の固相拡散により導電部２（第２主面部２１２）に接合されている。導電性接合材５９の形成方法は、たとえば先述の半導体装置Ａ１０における導電性接合材４９の場合と同様である。導電性接合材５９を用いて導電部２（第２主面部２１２）とスイッチング素子５とを接合する方法についても、先述の半導体装置Ａ１０において図１１を参照して説明した方法と同様である。
　コンデンサ６は、半導体レーザ素子４に通電する電流となるべき電荷を一時的に蓄積するためのものである。図１２に示すように、図示された例においては、コンデンサ６は、電極６１および電極６２を有する。電極６１は、接合部材（図示略）によって第１主面部２１１に導通接合されている。電極６２は、接合部材（図示略）によって第２主面部２１２に導通接合されている。前記接合部材は、たとえばハンダである。本実施形態においては、半導体装置Ａ２０は、２つのコンデンサ６を備える。２つのコンデンサ６は、互いに並列に接続されている。また、本実施形態においては、２つのコンデンサ６は、半導体レーザ素子４を挟んで方向ｘ両側に配置されている。２つのコンデンサ６は、方向ｙに視て凹部２１２Ｂおよび凸部２１１Ｂと重なっていない。
　複数の第１ワイヤ７１は、図１２および図１４に示すように、スイッチング素子５のソース電極５３と半導体レーザ素子４の第１レーザ電極４４とに接続されている。第１ワイヤ７１は、たとえば、Ａｕ、Ｃｕ、Ａｌ等の金属からなり、本実施形態においては、Ａｕからなる。複数の第１ワイヤ７１の本数は特に限定されず、図示された例においては、３本である。複数の第１ワイヤ７１は、ソース電極５３の方向ｙにおける第４面１７寄りの部分に接続されている。複数の第１ワイヤ７１は、半導体レーザ素子４の第１レーザ電極４４に、方向ｙに並ぶように接続されている。
　複数の第２ワイヤ７２は、図１２および図１４に示すように、スイッチング素子５のソース電極５３と導電部２の主面部２１の第３主面部２１３とに接続されている。第２ワイヤ７２は、たとえば、Ａｕ、Ｃｕ、Ａｌ等の金属からなり、本実施形態においては、第１ワイヤ７１と同じくＡｕからなる。複数の第２ワイヤ７２の本数は特に限定されず、図示された例においては、２本であり、複数の第１ワイヤ７１の本数よりも少ない。このため、複数の第１ワイヤ７１の抵抗値は、複数の第２ワイヤ７２の抵抗値よりも小さい。複数の第２ワイヤ７２は、ソース電極５３の方向ｙにおける第３面１６寄りの部分に接続されている。複数の第２ワイヤ７２は、第３主面部２１３に、方向ｘに並ぶように接続されている。
　第３ワイヤ７３は、図１２に示すように、スイッチング素子５のゲート電極５２と導電部２の主面部２１の第４主面部２１４とに接続されている。第３ワイヤ７３は、たとえば、Ａｕ、Ｃｕ、Ａｌ等の金属からなり、本実施形態においては、Ａｕからなる。第３ワイヤ７３の本数は特に限定されず、図示された例においては、１本である。
　透光樹脂８は、支持部材１の支持面１Ａ上に配置されており、当該支持面１Ａ、半導体レーザ素子４、スイッチング素子５、複数のコンデンサ６、複数の第１ワイヤ７１、複数の第２ワイヤ７２および第３ワイヤ７３を覆っている。透光樹脂８は、半導体レーザ素子４からのレーザ光Ｌを透過させる材質からなり、たとえば透明なエポキシ樹脂やシリコーン樹脂からなる。
　透光樹脂８の形状は特に限定されず、本実施形態においては、図１２および図１４に示すように、透光樹脂８は、樹脂主面８１、樹脂第１面８４、樹脂第２面８５、樹脂第３面８６および樹脂第４面８７を有する。
　樹脂主面８１は、方向ｚにおいて支持面１Ａと同じ側を向く面であり、図示された例においては、平面である。樹脂第１面８４は、方向ｘにおいて第１面１４と同じ側を向く面である。図示された例においては、樹脂第１面８４は、平面であり、第１面１４と面一である。樹脂第２面８５は、方向ｘにおいて第２面１５と同じ側を向く面である。図示された例においては、樹脂第２面８５は、平面であり、第２面１５と面一である。樹脂第３面８６は、方向ｙにおいて第３面１６と同じ側を向く面である。図示された例においては、樹脂第３面８６は、平面であり、第３面１６と面一である。樹脂第４面８７は、方向ｙにおいて第４面１７と同じ側を向く面である。図示された例においては、樹脂第４面８７は、平面であり、樹脂第４面８７と面一である。本実施形態においては、半導体レーザ素子４からのレーザ光Ｌは、透光樹脂８の樹脂第４面８７から出射される。なお、樹脂第４面８７を平坦かつ平滑な面とすることにより、レーザ光Ｌの散乱を抑制し、出射効率を高めることができる。
　次に、半導体装置Ａ２０の作用について説明する。
　半導体装置Ａ２０において、導電部２と半導体レーザ素子４との間に介在する導電性接合材４９は、金属基層４９０、第１接合層４９１および第２接合層４９２を含む。第１接合層４９１と半導体レーザ素子４（第２レーザ電極４５）、および第２接合層４９２と導電部２（第１主面部２１１）が、それぞれ金属の固相拡散により導通接合されており、第１接合層４９１と第２接合層４９２との間に金属基層４９０が介在する。このような構成によれば、第１接合層４９１と半導体レーザ素子４（第２レーザ電極４５）、および第２接合層４９２と導電部２（第１主面部２１１）を、それぞれ固相拡散により接合させる際、金属基層４９０がクッションとして機能する。これにより、第１接合層４９１と半導体レーザ素子４（第２レーザ電極４５）の境界部、および第２接合層４９２と導電部２（第１主面部２１１）の境界部のそれぞれに作用する押圧力の均一化が図られる。したがって、第１接合層４９１と半導体レーザ素子４（第２レーザ電極４５）、および第２接合層４９２と導電部２（第１主面部２１１）は、それぞれ固相拡散接合により強固に接合されている。その結果、半導体装置Ａ２０の使用時に半導体レーザ素子４で発生した熱によって導電性接合材４９が繰り返し高温状態に晒されても、導電性接合材４９における接合状態の変化が抑制される。したがって、導電性接合材４９を具備する半導体装置Ａ２０によれば、半導体レーザ素子４と導電部２との接合状態に対する信頼性を向上させることができる。
　本実施形態において、金属基層４９０のヤング率は、第１接合層４９１および第２接合層４９２の各々の構成材料のヤング率よりも小である。このような構成によれば、導電性接合材４９を半導体レーザ素子４（第２レーザ電極４５）と導電部２（第１主面部２１１）とに固相拡散による接合する際、相対的に軟らかい金属基層４９０によって応力が緩和され、接合境界部の平滑化を図ることができる。これにより、第１接合層４９１と半導体レーザ素子４（第２レーザ電極４５）、および第２接合層４９２と導電部２（第１主面部２１１）は、固相拡散によってより強固に接合される。
　本実施形態では金属基層４９０の厚さが第１接合層４９１および第２接合層４９２の各々の厚さよりも大である。これにより、固相拡散による接合の際、第１接合層４９１と半導体レーザ素子４（第２レーザ電極４５）の境界部、および第２接合層４９２と導電部２（第１主面部２１１）の境界部のそれぞれに作用する押圧力がより均一となる。したがって、第１接合層４９１と半導体レーザ素子４（第２レーザ電極４５）、および第２接合層４９２と導電部２（第１主面部２１１）は、それぞれより強固な導通接合状態となり得る。
　導電性接合材４９は、第１中間層４９３および第２中間層４９４を含む。第１中間層４９３は金属基層４９０と第１接合層４９１との間に介在し、第２中間層４９４は金属基層４９０と第２接合層４９２との間に介在する。第１中間層４９３および第２中間層４９４を有する構成は、固相拡散による接合の際、第１接合層４９１と半導体レーザ素子４（第２レーザ電極４５）の境界部、および第２接合層４９２と導電部２（第１主面部２１１）の境界部それぞれに作用する押圧力の均一化を図るのに適している。また、第１中間層４９３および第２中間層４９４の各々の構成材料がニッケルであると、第１中間層４９３および第２中間層４９４のヤング率が比較的大きい。この場合、固相拡散接合の際に接合境界部に作用する押圧力がより均一になり、第１接合層４９１と半導体レーザ素子４（第２レーザ電極４５）、および第２接合層４９２と導電部２（第１主面部２１１）は、より強固な導通接合状態となり得る。
　本実施形態では、第１接合層４９１および第２接合層４９２の各々の構成材料は銀を含む。このような構成によれば、導電性接合材４９を用いた固相拡散による接合の際、第１接合層４９１および第２接合層４９２の酸化が抑制され、良好な固相拡散接合が可能となる。
　導電部２とスイッチング素子５との間に介在する導電性接合材５９は、導電性接合材４９と同様に、金属基層、第１接合層、第２接合層、第１中間層および第２中間層を含む。これら金属基層、第１接合層、第２接合層、第１中間層および第２中間層の具体的構成は、導電性接合材４９における金属基層４９０、第１接合層４９１、第２接合層４９２、第１中間層４９３および第２中間層４９４とそれぞれ同様である。したがって、導電性接合材５９によってもスイッチング素子５と導電部２０との接合状態に対する信頼性を向上させることができる。導電性接合材５９を具備することにより、導電性接合材４９に関して先述したのと同様の効果を奏する。
　図２１～図２８に基づき、第３実施形態に係る半導体装置Ａ３０について説明する。図示された半導体装置Ａ３０は、支持部材１、堰部１８、導電部２、ＬＥＤ素子４００、ワイヤ７および透光樹脂８を備える。半導体装置Ａ３０は、様々な照明装置や表示装置などにおける光源として用いられる。
　図２１に示すように、半導体装置Ａ３０は、方向ｚに視て矩形状である。方向ｘおよび方向ｙは、各々、半導体装置Ａ２０の矩形状をなす辺に沿う方向に対応する。図２１においては、透光樹脂８を省略している。
　支持部材１は、導電部２を介してＬＥＤ素子４００を支持している。支持部材１は、絶縁材料からなる。支持部材１の材質は特に限定されず、たとえばエポキシ樹脂やガラスエポキシ樹脂が挙げられる。以降の説明においては、支持部材１がセラミックスからなる場合を例に説明する。本実施形態においては、支持部材１は、支持面１Ａおよび底面１Ｂを有しており、方向ｚに視てたとえば矩形状である。支持面１Ａは、方向ｚ一方側を向く面であり、図示された例においては、平面である。底面１Ｂは、支持面１Ａとは反対側の方向ｚ他方側を向く面であり、図示された例においては、平面である。
　導電部２は、ＬＥＤ素子４００への導通経路を構成する部位である。導電部２の材質は特に限定されず、銅（Ｃｕ），ニッケル（Ｎｉ），チタン（Ｔｉ），金（Ａｕ）等の金属が挙げられる。また、導電部２の形成手法は特に限定されず、図示された例においては、たとえばめっきによって形成される。
　図示された導電部２は、主面部２１、底面部２２および連絡部２３を含む。
　主面部２１は、支持部材１の支持面１Ａ上に配置されている。主面部２１は、方向ｚを厚さ方向とする薄板状である。図示された例においては、主面部２１は、第１主面部２１１および第２主面部２１２を含む。
　図２１および図２２に示すように、第１主面部２１１は、支持部材１の方向ｚ視における中央に配置されている。第１主面部２１１は、方向ｚ一方側を向く主面２１１Ａを有する。第１主面部２１１の形状は特に限定されないが、図示された例においては、矩形状である。
　図２１および図２２に示すように、第２主面部２１２は、第１主面部２１１よりも方向ｘ一方側寄りに配置されている。第２主面部２１２の形状は特に限定されず、図示された例においては、矩形状である。第２主面部２１２の面積は、第１主面部２１１よりも小さい。
　図２２に示すように、底面部２２は、支持部材１の底面１Ｂ上に配置されている。図示された例においては、底面部２２は、第１底面部２２１および第２底面部２２２を含む。本実施形態においては、底面部２２は、半導体装置Ａ３０を回路基板（図示略）等に実装する際の実装端子として用いられる。
　図２２に示すように、第１底面部２２１は、支持部材１の方向ｚ視における中央に配置されている。第１底面部２２１の形状は特に限定されず、本実施形態では矩形状である。
　図２２に示すように、第２底面部２２２は、第１底面部２２１よりも方向ｘ一方側寄りに配置されている。第２底面部２２２の形状は特に限定されず、本実施形態では矩形状である。第２底面部２２２の面積は、第１底面部２２１よりも小さい。
　連絡部２３は、主面部２１の各部と底面部２２の各部とを導通させる。連絡部２３の具体的構成は特に限定されず、図示された例においては、図２１および図２２に示すように、第１連絡部２３１および第２連絡部２３２を含む。図示した例では１つの第１連絡部２３１を具備するが、第１連絡部２３１の個数は、特に限定されない。
　第１連絡部２３１および第２連絡部２３２の具体的構成は特に限定されず、本実施形態においては、図２１および図２２に示すように、方向ｚ視における支持部材１の内方領域において、支持部材１を厚さ方向に貫通している。このような、第１連絡部２３１および第２連絡部２３２は、支持部材１に形成された貫通孔に金属が充填されることによって設けられており、支持面１Ａおよび底面１Ｂに到達している。図示された例とは異なり、第１連絡部２３１および第２連絡部２３２を支持部材１に形成された貫通孔の内面に金属からなるめっき層を形成することによって設けてもよく、その場合、第１連絡部２３１および第２連絡部２３２の内部に樹脂が充填される。
　図２２に示すように、第１連絡部２３１は、第１主面部２１１と第１底面部２２１とに繋がっており、第１主面部２１１と第１底面部２２１とを連結している。第２連絡部２３２は、第２主面部２１２と第２底面部２２２とに繋がっており、第２主面部２１２と第２底面部２２２とを連結している。
　ＬＥＤ素子４００は、半導体装置Ａ３０の光源であり、半導体層からなる活性層等を含む。本実施形態においては、図２２に示すように、ＬＥＤ素子４００は、素子本体４１、電極パッド４２１および裏面電極４３を有する。素子本体４１は、たとえばＧａＮ系半導体からなり、たとえば青色光を発する。素子本体４１は、素子主面４１１および素子裏面４１２を有する。素子主面４１１および素子裏面４１２は、方向ｚにおいて互いに反対側を向く。素子主面４１１は、方向ｚにおいて主面２１１Ａと同じ側を向く面である。素子裏面４１２は、方向ｚにおいて底面１Ｂと同じ側を向く面であり、主面２１１Ａに対向している。
　電極パッド４２１は、素子主面４１１上に配置されている。裏面電極４３は、素子裏面４１２上に配置されている。本実施形態においては、電極パッド４２１がアノード電極であり裏面電極４３がカソード電極である。裏面電極４３は、たとえば銀によって構成される。
　図２１および図２２に示すように、本実施形態においては、ＬＥＤ素子４００は、第１主面部２１１上に配置されている。具体的にはＬＥＤ素子４００の裏面電極４３が導電性接合材４９によって第１主面部２１１の主面２１１Ａに電気的に接合されている。ＬＥＤ素子４００において、素子本体４１から発せられた光が、素子主面４１１が向く側（方向ｚ一方側）に出射される。図示された例においては、ＬＥＤ素子４００は、方向ｚに視て第１連絡部２３１と重なっている。
　導電性接合材４９は、導電部２（主面部２１の第１主面部２１１）とＬＥＤ素子４００との間に介在している。導電性接合材４９は方向ｚに視てＬＥＤ素子４００よりも大きいサイズであり、方向ｚに視てＬＥＤ素子４００の全体が導電性接合材４９と重なっている。導電性接合材４９は、複数の金属層が積層された構成である。図２３および図２４に示すように、半導体装置Ａ３０において、導電性接合材４９は、金属基層４９０、第１接合層４９１および第２接合層４９２を含む。図２５～図２８に示すように、導電性接合材４９は、さらに第１中間層４９３および第２中間層４９４を含む。
　金属基層４９０は、導電性接合材４９の体積の大半を占めている。金属基層４９０の厚さは、たとえば１０～２００μｍ程度である。金属基層４９０の構成材料は、たとえばアルミニウム、チタン、亜鉛、ハフニウムおよびエルビウムの少なくともいずれかを含む。本実施形態では、金属基層４９０の構成材料はアルミニウムを含む。金属基層４９０の構成材料がアルミニウムである場合、当該金属基層４９０のヤング率は、７０．３ＧＰａである。
　第１接合層４９１は、金属基層４９０とＬＥＤ素子４００との間に介在している。本実施形態では、図２５および図２６に示すように、第１接合層４９１は第１中間層４９３上に形成されている。第１接合層４９１の構成材料は、たとえば銀、銅および金の少なくともいずれかを含む。本実施形態では、第１接合層４９１の構成材料は銀を含む。第１接合層４９１は、金属の固相拡散によりＬＥＤ素子４００（裏面電極４３）に接合されている。裏面電極４３の構成材料は、たとえば銀を含む。裏面電極４３の厚さは第１接合層４９１の厚さよりも小であり、裏面電極４３は、たとえばスパッタリング法により形成される。
　第２接合層４９２は、金属基層４９０と導電部２（第１主面部２１１）との間に介在している。本実施形態では、図２７および図２８に示すように、第２接合層４９２は第２中間層４９４上に形成されている。第２接合層４９２の構成材料は、たとえば銀、銅および金の少なくともいずれかを含む。本実施形態では、第２接合層４９２の構成材料は銀を含む。第２接合層４９２は、金属の固相拡散により導電部２（第１主面部２１１）に接合されている。
　第１接合層４９１および第２接合層４９２の各々の構成材料が銀である場合、当該第１接合層４９１および第２接合層４９２の各々のヤング率は、８２．７ＧＰａである。このため、先述した金属基層４９０のヤング率（７０．３ＧＰａ）が示すとおり、金属基層４９０のヤング率は、第１接合層４９１および第２接合層４９２の各々のヤング率よりも小である。また、第１接合層４９１および第２接合層４９２の各々の厚さは、たとえば２～５μｍ程度であり、金属基層４９０の厚さよりも小である。
　図２５および図２６に示すように、第１中間層４９３は、金属基層４９０と第１接合層４９１との間に介在している。本実施形態では、第１中間層４９３は金属基層４９０上に形成されている。図２７および図２８に示すように、第２中間層４９４は、金属基層４９０と第２接合層４９２との間に介在している。本実施形態では、第２中間層４９４は金属基層４９０上に形成されている。第１中間層４９３および第２中間層４９４の各々の構成材料は、たとえばニッケルを含む。第１中間層４９３および第２中間層４９４の各々の構成材料がニッケルである場合、当該第１中間層４９３および第２中間層４９４の各々のヤング率は、２００ＧＰａである。また、第１中間層４９３および第２中間層４９４の各々の厚さは、たとえば０．２～２μｍ程度であり、第１接合層４９１や第２接合層４９２の厚さよりも小である。
　前記導電性接合材４９の積層構造は、たとえばスパッタリング法やめっき処理により形成される。導電性接合材４９の形成方法は、たとえば先述の半導体装置Ａ１０における導電性接合材４９の場合と同様である。導電性接合材４９を用いて導電部２（第１主面部２１１）とＬＥＤ素子４００とを接合する方法についても、先述の半導体装置Ａ１０において図１１を参照して説明した方法と同様である。
　導電性接合材４９によって導電部２とＬＥＤ素子４００とを固相拡散により接合すると、導電性接合材４９のうち方向ｚに視て半導体レーザ素子４と重なる部位は、半導体レーザ素子４側から押圧力を受けることで僅かに窪む。すると、図２４にも表れているように、導電性接合材４９において、方向ｚに視てＬＥＤ素子４００と重なる部位と、方向ｚに視てＬＥＤ素子４００と重ならない部位との境界部分に段差が形成される。
　図２４、図２６および図２８に示すように、方向ｚに視て導電性接合材４９がＬＥＤ素子４００に重なる部位と重ならない部位の境界付近では、第１接合層４９１と裏面電極４３（ＬＥＤ素子４００）との境界面、および第２接合層４９２と第１主面部２１１（導電部２）との境界面において、空隙４９５が生じ得る。その一方、図２４、図２５および図２７に示すように、方向ｚに視て導電性接合材４９がＬＥＤ素子４００に重なる部位と重ならない部位の境界部分よりも少し内側（方向ｚに視て導電性接合材４９がＬＥＤ素子４００に重なる部位）においては、第１接合層４９１と裏面電極４３（ＬＥＤ素子４００）との境界面および第２接合層４９２と第１主面部２１１（導電部２）との境界面に空隙が存在しない。このようなことから理解できるように、第１接合層４９１および裏面電極４３、ならびに第２接合層４９２および第１主面部２１１は、それぞれ固相拡散により強固に接合された状態となる。
　ワイヤ７は、図２１および図２２に示すように、ＬＥＤ素子４００の電極パッド４２１と導電部２の第２主面部２１２とに接続されている。ワイヤ７は、たとえば、Ａｕ、Ｃｕ、Ａｌ等の金属からなり、本実施形態においては、Ａｕからなる。
　堰部１８は、支持部材１の支持面１Ａ上に配置されている。堰部１８は、方向ｚに視て閉じた枠状であり、外縁が矩形状とされ、内縁が円形とされている。堰部１８は、方向ｚに視てＬＥＤ素子４００および透光樹脂８を囲っている。堰部１８は、たとえば白色のシリコーン樹脂からなる。
　透光樹脂８は、堰部１８によって囲まれた空間に充填されており、支持部材１の支持面１Ａの一部、ＬＥＤ素子４００およびワイヤ７を覆っている。透光樹脂８は、ＬＥＤ素子４００からの光を透過させる材質からなり、たとえば透明なシリコーン樹脂あるいはエポキシ樹脂などに蛍光材料が混入された材質からなる。上記蛍光材料としては、たとえばＬＥＤ素子４００からの青色光によって励起されることにより黄色光を発するものが採用される。これにより、半導体装置Ａ３０からは、白色光が発せられる。
　次に、半導体装置Ａ３０の作用について説明する。
　半導体装置Ａ３０において、導電部２とＬＥＤ素子４００との間に介在する導電性接合材４９は、金属基層４９０、第１接合層４９１および第２接合層４９２を含む。第１接合層４９１とＬＥＤ素子４００（裏面電極４３）、および第２接合層４９２と導電部２（第１主面部２１１）が、それぞれ金属の固相拡散により導通接合されており、第１接合層４９１と第２接合層４９２との間に金属基層４９０が介在する。このような構成によれば、第１接合層４９１とＬＥＤ素子４００（裏面電極４３）、および第２接合層４９２と導電部２（第１主面部２１１）を、それぞれ固相拡散により接合させる際、金属基層４９０がクッションとして機能する。これにより、第１接合層４９１とＬＥＤ素子４００（裏面電極４３）の境界部、および第２接合層４９２と導電部２（第１主面部２１１）の境界部のそれぞれに作用する押圧力の均一化が図られる。したがって、第１接合層４９１とＬＥＤ素子４００（裏面電極４３）、および第２接合層４９２と導電部２（第１主面部２１１）は、それぞれ固相拡散接合により強固に接合されている。その結果、半導体装置Ａ３０の使用時にＬＥＤ素子４００で発生した熱によって導電性接合材４９が繰り返し高温状態に晒されても、導電性接合材４９における接合状態の変化が抑制される。したがって、導電性接合材４９を具備する半導体装置Ａ３０によれば、ＬＥＤ素子４００と導電部２との接合状態に対する信頼性を向上させることができる。
　本実施形態において、金属基層４９０のヤング率は、第１接合層４９１および第２接合層４９２の各々の構成材料のヤング率よりも小である。このような構成によれば、導電性接合材４９をＬＥＤ素子４００（裏面電極４３）と導電部２（第１主面部２１１）とに固相拡散による接合する際、相対的に軟らかい金属基層４９０によって応力が緩和され、接合境界部の平滑化を図ることができる。これにより、第１接合層４９１とＬＥＤ素子４００（裏面電極４３）、および第２接合層４９２と導電部２（第１主面部２１１）は、固相拡散によってより強固に接合される。
　本実施形態では金属基層４９０の厚さが第１接合層４９１および第２接合層４９２の各々の厚さよりも大である。これにより、固相拡散による接合の際、第１接合層４９１とＬＥＤ素子４００（裏面電極４３）の境界部、および第２接合層４９２と導電部２（第１主面部２１１）の境界部のそれぞれに作用する押圧力がより均一となる。したがって、第１接合層４９１とＬＥＤ素子４００（裏面電極４３）、および第２接合層４９２と導電部２（第１主面部２１１）は、それぞれより強固な導通接合状態となり得る。
　導電性接合材４９は、第１中間層４９３および第２中間層４９４を含む。第１中間層４９３は金属基層４９０と第１接合層４９１との間に介在し、第２中間層４９４は金属基層４９０と第２接合層４９２との間に介在する。第１中間層４９３および第２中間層４９４を有する構成は、固相拡散による接合の際、第１接合層４９１とＬＥＤ素子４００（裏面電極４３）の境界部、および第２接合層４９２と導電部２（第１主面部２１１）の境界部それぞれに作用する押圧力の均一化を図るのに適している。第１中間層４９３および第２中間層４９４の各々の構成材料がニッケルであると、第１中間層４９３および第２中間層４９４のヤング率が比較的大きい。この場合、固相拡散接合の際に接合境界部に作用する押圧力がより均一になり、第１接合層４９１とＬＥＤ素子４００（裏面電極４３）、および第２接合層４９２と導電部２（第１主面部２１１）は、より強固な導通接合状態となり得る。
　本実施形態では、第１接合層４９１および第２接合層４９２の各々の構成材料は銀を含む。このような構成によれば、導電性接合材４９を用いた固相拡散による接合の際、第１接合層４９１および第２接合層４９２の酸化が抑制され、良好な固相拡散接合が可能となる。
　以上、本開示の具体的な実施形態を説明したが、本開示はこれに限定されるものではなく、種々な変更が可能である。本開示に係る半導体装置の具体的な構成は、種々に設計変更自在である。
　本開示の導電性接合材を構成する各層の材質や厚さも、上記実施形態に限定されない。上記実施形態では、導電性接合材が金属基層、第１接合層、第２接合層、第１中間層および第２中間層を有する場合について説明したが、たとえば第１中間層および第２中間層を有さない構成としてもよい。導電性接合材については、前記の金属基層、第１接合層、第２接合層、第１中間層および第２中間層に加えて、たとえば金属基層と第１接合層との間や金属基層と第２接合層４９２との間において他の金属層が介在する構成としてもよい。
　本開示は、以下の付記に記載された構成を含む。
　付記１．
　主面を有する導電部と、
　前記主面に搭載された半導体素子と、
　前記導電部と前記半導体素子との間に介在し、前記導電部と前記半導体素子とを導通接合させる導電性接合材と、を備え、
　前記導電性接合材は、金属基層と、第１接合層と、第２接合層とを含み、前記第１接合層は、前記金属基層と前記半導体素子との間に介在し、金属の固相拡散により前記半導体素子と接合されており、前記第２接合層は、前記金属基層と前記導電部との間に介在し、金属の固相拡散により前記導電部と接合されている、半導体装置。
　付記２．
　前記金属基層のヤング率は、前記第１接合層および前記第２接合層の各々のヤング率よりも小である、付記１に記載の半導体装置。
　付記３．
　前記金属基層の厚さは、前記第１接合層および前記第２接合層の各々の厚さよりも大である、付記２に記載の半導体装置。
　付記４．
　前記金属基層の構成材料は、アルミニウム、チタン、亜鉛、ハフニウムおよびエルビウムの少なくともいずれかを含む、付記３に記載の半導体装置。
　付記５．
　前記第１接合層および前記第２接合層の各々の構成材料は、銀、銅および金の少なくともいずれかを含む、付記４に記載の半導体装置。
　付記６．
　前記半導体素子は、素子本体と、前記素子本体に形成された裏面電極と、を有し、
　前記裏面電極と前記第１接合層とが固相拡散により互いに接合されている、付記１ないし５のいずれか１つに記載の半導体装置。
　付記７．
　前記第１接合層および前記第２接合層の各々の厚さは、前記裏面電極の厚さよりも大である、付記６に記載の半導体装置。
　付記８．
　前記導電性接合材は、第１中間層および第２中間層を含み、前記第１中間層は、前記金属基層と前記第１接合層との間に介在し、前記第２中間層は、前記金属基層と前記第２接合層との間に介在する、付記１ないし７のいずれか１つに記載の半導体装置。
　付記９．
　前記第１中間層および前記第２中間層の各々の構成材料は、ニッケルを含む、付記８に記載の半導体装置。
　付記１０．
　前記導電部と対向する支持面を有する支持基板をさらに備える、付記１ないし９のいずれか１つに記載の半導体装置。
　付記１１．
　前記導電部を前記支持基板に接合する接合部材をさらに備え、
　前記接合部材は、固相拡散により接合された複数の金属層を含む、付記１０に記載の半導体装置。
　付記１２．
　　前記導電部および前記半導体素子と、前記支持基板の一部と、を覆う封止樹脂をさらに備え、前記支持基板は、前記支持面と反対側の底面を有し、前記底面は、前記封止樹脂から露出している、付記１０または１１に記載の半導体装置。
　付記１３．
　第１入力端子と、第２入力端子と、第１出力端子と、第２出力端子とをさらに備え、
　前記半導体素子は、第１スイッチング素子および第２スイッチング素子を含み、前記導電部は、前記第１スイッチング素子が導通接合される第１導電部と、前記第２スイッチング素子が導通接合される第２導電部と、を含み、
　前記第１入力端子は前記第１導電部に接続され、前記第２入力端子は前記第２スイッチング素子に接続され、前記第１出力端子および前記第２出力端子は前記第２導電部に接続されており、
　前記封止樹脂は、前記第１入力端子、前記第２入力端子、前記第１出力端子および前記第２出力端子の各々の一部を覆っている、付記１２に記載の半導体装置。
　付記１４．
　前記半導体素子を支持する支持面を有する支持部材をさらに備え、
　前記導電部は、主面部と、底面部と、前記主面部および前記底面部を導通させる連絡部と、を含む、付記１ないし９のいずれか１つに記載の半導体装置。
　付記１５．
　前記半導体素子は、半導体レーザ素子およびスイッチング素子を含み、
　前記導電部は、互いに離間する第１部および第２部を含み、
　前記半導体レーザ素子は、前記第１部に導通接合され、前記スイッチング素子は、前記第２部に導通接合されている、付記１４に記載の半導体装置。
　付記１６．
　前記半導体レーザ素子と、前記スイッチング素子と、前記支持部材の前記支持面とを覆う透光樹脂をさらに備える、付記１５に記載の半導体装置。
　付記１７．
　透光樹脂をさらに備え、
　前記半導体素子は、ＬＥＤ素子を含み、
　前記透光樹脂は、前記ＬＥＤ素子と、前記支持部材の前記支持面の少なくとも一部とを覆う、付記１４に記載の半導体装置。
　付記１８．
　前記支持部材の前記支持面上に配置された枠状の堰部をさらに備え、
　前記支持部材の厚さ方向に視て、前記堰部は、前記透光樹脂を囲んでいる、付記１７に記載の半導体装置。
Ａ１０，Ａ２０，Ａ３０　　半導体装置
１　　　　支持部材
１Ａ　　　支持面
１Ｂ　　　底面
１０　　　支持基板
１０Ａ　　支持面
１０Ｂ　　底面
１１　　　第１支持板
１２　　　第２支持板
１２１　　第１領域
１２２　　第２領域
１２３　　第３領域
１３　　　底板
１３Ａ　　凹部
１４　　　第１面
１５　　　第２面
１６　　　第３面
１７　　　第４面
１８　　　堰部
１９　　　接合部材
２　　　　導電部
２０　　　導電部
２０Ａ　　主面
２０Ｂ　　裏面
２０１　　第１導電部
２０２　　第２導電部
２０３　　第３導電部
２１　　　主面部
２１Ａ　　主面
２１１　　第１主面部
２１１Ａ　主面
２１１Ｂ　凸部
２１２　　第２主面部
２１２Ａ　主面
２１２Ｂ　凹部
２１３　　第３主面部
２１３Ａ　主面
２１４　　第４主面部
２１４Ａ　主面
２２　　　底面部
２２１　　第１底面部
２２２　　第２底面部
２２３　　第３底面部
２２４　　第４底面部
２３　　　連絡部
２３１　　第１連絡部
２３２　　第２連絡部
２３３　　第３連絡部
２３４　　第４連絡部
２４　　　基材
２５　　　導体層
２６　　　絶縁層
２７１　　ゲート配線層
２７２　　検出配線層
３１　　　第１入力端子
３１１　　屈曲部
３２　　　第２入力端子
３２１　　屈曲部
３３　　　第１出力端子
３３１　　屈曲部
３４　　　第２出力端子
３４１　　屈曲部
３５　　　ゲート端子
３６　　　検出端子
４　　　　半導体レーザ素子
４０　　　半導体素子
４００　　ＬＥＤ素子
４０１　　第１素子
４０２　　第２素子
４１　　　素子本体
４１１　　素子主面
４１２　　素子裏面
４２　　　主面電極
４２１　　電極パッド
４３　　　裏面電極
４４　　　第１レーザ電極
４５　　　第２レーザ電極（裏面電極）
４９　　　導電性接合材
４９０　　金属基層
４９１　　第１接合層
４９２　　第２接合層
４９３　　第１中間層
４９４　　第２中間層
４９５　　空隙
５　　　　スイッチング素子
５１　　　素子本体
５１１　　素子主面
５１２　　素子裏面
５２　　　ゲート電極
５３　　　ソース電極
５４　　　ドレイン電極（裏面電極）
５９　　　導電性接合材
６　　　　コンデンサ
６１　　　電極
６２　　　電極
７　　　　ワイヤ
７１　　　第１ワイヤ
７２　　　第２ワイヤ
７３　　　第３ワイヤ
８　　　　透光樹脂
８０　　　封止樹脂
８１　　　樹脂主面
８２　　　樹脂底面
８４　　　樹脂第１面
８５　　　樹脂第２面
８６　　　樹脂第３面
８７　　　樹脂第４面
９　　　　押圧部材
Ｌ　　　　レーザ光
ｘ　　　　方向
ｙ　　　　方向
ｚ　　　　方向（厚さ方向）

Claims (18)

  1. 　主面を有する導電部と、
    　前記主面に搭載された半導体素子と、
    　前記導電部と前記半導体素子との間に介在し、前記導電部と前記半導体素子とを導通接合させる導電性接合材と、を備え、
    　前記導電性接合材は、金属基層と、第１接合層と、第２接合層とを含み、前記第１接合層は、前記金属基層と前記半導体素子との間に介在し、金属の固相拡散により前記半導体素子と接合されており、前記第２接合層は、前記金属基層と前記導電部との間に介在し、金属の固相拡散により前記導電部と接合されている、半導体装置。
  2. 　前記金属基層のヤング率は、前記第１接合層および前記第２接合層の各々のヤング率よりも小である、請求項１に記載の半導体装置。
  3. 　前記金属基層の厚さは、前記第１接合層および前記第２接合層の各々の厚さよりも大である、請求項２に記載の半導体装置。
  4. 　前記金属基層の構成材料は、アルミニウム、チタン、亜鉛、ハフニウムおよびエルビウムの少なくともいずれかを含む、請求項３に記載の半導体装置。
  5. 　前記第１接合層および前記第２接合層の各々の構成材料は、銀、銅および金の少なくともいずれかを含む、請求項４に記載の半導体装置。
  6. 　前記半導体素子は、素子本体と、前記素子本体に形成された裏面電極と、を有し、
    　前記裏面電極と前記第１接合層とが固相拡散により互いに接合されている、請求項１ないし５のいずれか１つに記載の半導体装置。
  7. 　前記第１接合層および前記第２接合層の各々の厚さは、前記裏面電極の厚さよりも大である、請求項６に記載の半導体装置。
  8. 　前記導電性接合材は、第１中間層および第２中間層を含み、前記第１中間層は、前記金属基層と前記第１接合層との間に介在し、前記第２中間層は、前記金属基層と前記第２接合層との間に介在する、請求項１ないし７のいずれか１つに記載の半導体装置。
  9. 　前記第１中間層および前記第２中間層の各々の構成材料は、ニッケルを含む、請求項８に記載の半導体装置。
  10. 　前記導電部と対向する支持面を有する支持基板をさらに備える、請求項１ないし９のいずれか１つに記載の半導体装置。
  11. 　前記導電部を前記支持基板に接合する接合部材をさらに備え、
    　前記接合部材は、固相拡散により接合された複数の金属層を含む、請求項１０に記載の半導体装置。
  12. 　　前記導電部および前記半導体素子と、前記支持基板の一部と、を覆う封止樹脂をさらに備え、前記支持基板は、前記支持面と反対側の底面を有し、前記底面は、前記封止樹脂から露出している、請求項１０または１１に記載の半導体装置。
  13. 　第１入力端子と、第２入力端子と、第１出力端子と、第２出力端子とをさらに備え、
    　前記半導体素子は、第１スイッチング素子および第２スイッチング素子を含み、前記導電部は、前記第１スイッチング素子が導通接合される第１導電部と、前記第２スイッチング素子が導通接合される第２導電部と、を含み、
    　前記第１入力端子は前記第１導電部に接続され、前記第２入力端子は前記第２スイッチング素子に接続され、前記第１出力端子および前記第２出力端子は前記第２導電部に接続されており、
    　前記封止樹脂は、前記第１入力端子、前記第２入力端子、前記第１出力端子および前記第２出力端子の各々の一部を覆っている、請求項１２に記載の半導体装置。
  14. 　前記半導体素子を支持する支持面を有する支持部材をさらに備え、
    　前記導電部は、主面部と、底面部と、前記主面部および前記底面部を導通させる連絡部と、を含む、請求項１ないし９のいずれか１つに記載の半導体装置。
  15. 　前記半導体素子は、半導体レーザ素子およびスイッチング素子を含み、
    　前記導電部は、互いに離間する第１部および第２部を含み、
    　前記半導体レーザ素子は、前記第１部に導通接合され、前記スイッチング素子は、前記第２部に導通接合されている、請求項１４に記載の半導体装置。
  16. 　前記半導体レーザ素子と、前記スイッチング素子と、前記支持部材の前記支持面とを覆う透光樹脂をさらに備える、請求項１５に記載の半導体装置。
  17. 　透光樹脂をさらに備え、
    　前記半導体素子は、ＬＥＤ素子を含み、
    　前記透光樹脂は、前記ＬＥＤ素子と、前記支持部材の前記支持面の少なくとも一部とを覆う、請求項１４に記載の半導体装置。
  18. 　前記支持部材の前記支持面上に配置された枠状の堰部をさらに備え、
    　前記支持部材の厚さ方向に視て、前記堰部は、前記透光樹脂を囲んでいる、請求項１７に記載の半導体装置。
PCT/JP2020/019610 2019-05-24 2020-05-18 半導体装置 WO2020241346A1 (ja)

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