JP7353233B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP7353233B2 JP7353233B2 JP2020084857A JP2020084857A JP7353233B2 JP 7353233 B2 JP7353233 B2 JP 7353233B2 JP 2020084857 A JP2020084857 A JP 2020084857A JP 2020084857 A JP2020084857 A JP 2020084857A JP 7353233 B2 JP7353233 B2 JP 7353233B2
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- Prior art keywords
- circuit pattern
- semiconductor device
- semiconductor
- circuit board
- semiconductor element
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- 239000004065 semiconductor Substances 0.000 title claims description 164
- 229910052751 metal Inorganic materials 0.000 claims description 92
- 239000002184 metal Substances 0.000 claims description 92
- 239000000463 material Substances 0.000 claims description 54
- 239000000758 substrate Substances 0.000 claims description 30
- 229920002799 BoPET Polymers 0.000 claims description 22
- 230000017525 heat dissipation Effects 0.000 claims description 20
- 238000007747 plating Methods 0.000 claims description 20
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 12
- 229910002804 graphite Inorganic materials 0.000 claims description 12
- 239000010439 graphite Substances 0.000 claims description 12
- 239000000853 adhesive Substances 0.000 claims description 6
- 230000001070 adhesive effect Effects 0.000 claims description 6
- 238000005516 engineering process Methods 0.000 description 13
- 239000003522 acrylic cement Substances 0.000 description 12
- 239000003566 sealing material Substances 0.000 description 8
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- 229910010271 silicon carbide Inorganic materials 0.000 description 5
- 230000005669 field effect Effects 0.000 description 3
- 230000020169 heat generation Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- PFNQVRZLDWYSCW-UHFFFAOYSA-N (fluoren-9-ylideneamino) n-naphthalen-1-ylcarbamate Chemical compound C12=CC=CC=C2C2=CC=CC=C2C1=NOC(=O)NC1=CC=CC2=CC=CC=C12 PFNQVRZLDWYSCW-UHFFFAOYSA-N 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- 229920006015 heat resistant resin Polymers 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- -1 polyethylene terephthalate Polymers 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
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- Junction Field-Effect Transistors (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Thin Film Transistor (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Description
以下、本実施の形態に関する半導体装置について説明する。
図1は、本実施の形態に関する半導体装置の構成の例を概略的に示す断面図である。
本実施の形態に関する半導体装置について説明する。なお、以下の説明においては、以上に記載された実施の形態で説明された構成要素と同様の構成要素については同じ符号を付して図示し、その詳細な説明については適宜省略するものとする。
図6は、本実施の形態に関する半導体装置の構成の例を概略的に示す断面図である。
本実施の形態に関する半導体装置について説明する。なお、以下の説明においては、以上に記載された実施の形態で説明された構成要素と同様の構成要素については同じ符号を付して図示し、その詳細な説明については適宜省略するものとする。
図7は、本実施の形態に関する半導体装置の構成の例を概略的に示す断面図である。
本実施の形態に関する半導体装置について説明する。なお、以下の説明においては、以上に記載された実施の形態で説明された構成要素と同様の構成要素については同じ符号を付して図示し、その詳細な説明については適宜省略するものとする。
図8は、本実施の形態に関する半導体装置の構成の例を概略的に示す断面図である。
本実施の形態に関する半導体装置について説明する。なお、以下の説明においては、以上に記載された実施の形態で説明された構成要素と同様の構成要素については同じ符号を付して図示し、その詳細な説明については適宜省略するものとする。
図9は、本実施の形態に関する半導体装置の構成の例を概略的に示す断面図である。
本実施の形態に関する半導体装置について説明する。なお、以下の説明においては、以上に記載された実施の形態で説明された構成要素と同様の構成要素については同じ符号を付して図示し、その詳細な説明については適宜省略するものとする。
以上に記載された実施の形態において説明された半導体装置は、Tj=175℃以上で引きはがし強度が常温の70%以上であるプリント基板を備えることができる。
本実施の形態に関する半導体装置について説明する。なお、以下の説明においては、以上に記載された実施の形態で説明された構成要素と同様の構成要素については同じ符号を付して図示し、その詳細な説明については適宜省略するものとする。
以上に記載された実施の形態において説明された半導体装置は、炭化珪素(SiC)からなる半導体素子18を備えることができる。ここで、炭化珪素(SiC)はワイドギャップ半導体の一種である。ワイドギャップ半導体とは、一般に、およそ2eV以上の禁制帯幅をもつ半導体を指し、窒化ガリウム(GaN)などの3族窒化物、酸化亜鉛(ZnO)などの2族酸化物、セレン化亜鉛(ZnSe)などの2族カルコゲナイド、ダイヤモンドおよび炭化珪素などが知られる。
次に、以上に記載された実施の形態によって生じる効果の例を示す。なお、以下の説明においては、以上に記載された実施の形態に例が示された具体的な構成に基づいて当該効果が記載されるが、同様の効果が生じる範囲で、本願明細書に例が示される他の具体的な構成と置き換えられてもよい。
以上に記載された実施の形態では、それぞれの構成要素の材質、材料、寸法、形状、相対的配置関係または実施の条件などについても記載する場合があるが、これらはすべての局面においてひとつの例であって、限定的なものではないものとする。
Claims (8)
- 上面に第1の回路パターンおよび第2の回路パターンを備えるプリント基板と、
前記第1の回路パターンの上面に配置される半導体素子とを備え、
前記半導体素子は、上面にドレイン電極が配置され、下面にゲート電極およびソース電極が配置され、
前記ゲート電極および前記ソース電極は、第1の接合材を介して前記第1の回路パターンの前記上面に接合され、
前記ドレイン電極は、前記半導体素子の上面に接続される金属部材を介して前記第2の回路パターンの上面に接合され、
前記プリント基板は、
絶縁基板と、
前記絶縁基板の上面に配置される配線層と、
前記配線層の上面に部分的に配置される絶縁層とを備え、
前記第1の回路パターンは、前記絶縁層に覆われずに複数箇所において露出する前記配線層のうちの一部であり、
前記第2の回路パターンは、前記絶縁層の上面に配置される、
半導体装置。 - 請求項1に記載の半導体装置であり、
前記配線層は、前記ゲート電極および前記ソース電極のうちの少なくとも一方と前記第1の接合材を介して接合される箇所にめっき層を備える、
半導体装置。 - 請求項1または2に記載の半導体装置であり、
前記配線層は、前記絶縁基板の側面から露出し、
前記絶縁基板の前記側面から露出している前記配線層に、第2の接合材を介して接合される金属端子をさらに備える、
半導体装置。 - 請求項1から3のうちのいずれか1つに記載の半導体装置であり、
前記プリント基板の下面に粘着する放熱シートと、
前記放熱シートの下面に粘着するベース板とをさらに備え、
前記放熱シートは、
前記プリント基板の前記下面に第1の粘着剤を介して粘着する第1のPETフィルムと、
前記第1のPETフィルムの下面に配置されるグラファイトシートと、
前記グラファイトシートの下面に配置され、かつ、第2の粘着剤を介して前記ベース板の上面に粘着する第2のPETフィルムとを備える、
半導体装置。 - 請求項1から4のうちのいずれか1つに記載の半導体装置であり、
前記プリント基板は、175℃以上で引きはがし強度が常温の70%以上である、
半導体装置。 - 請求項1から5のうちのいずれか1つに記載の半導体装置であり、
前記半導体素子がSiCからなる、
半導体装置。 - 請求項1から6のうちのいずれか1つに記載の半導体装置であり、
前記金属部材は、金属ワイヤーである、
半導体装置。 - 請求項1から6のうちのいずれか1つに記載の半導体装置であり、
前記金属部材は、金属ブロックである、
半導体装置。
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