WO2020230669A1 - Élément d'émission de surface de cavité verticale utilisant un miroir de réflexion de film multicouche semi-conducteur, et son procédé de production - Google Patents

Élément d'émission de surface de cavité verticale utilisant un miroir de réflexion de film multicouche semi-conducteur, et son procédé de production Download PDF

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WO2020230669A1
WO2020230669A1 PCT/JP2020/018402 JP2020018402W WO2020230669A1 WO 2020230669 A1 WO2020230669 A1 WO 2020230669A1 JP 2020018402 W JP2020018402 W JP 2020018402W WO 2020230669 A1 WO2020230669 A1 WO 2020230669A1
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layer
gan layer
semiconductor
temperature
growth
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進一 田中
和史 田中
裕孝 大野
孝信 赤木
裕介 横林
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スタンレー電気株式会社
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
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    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
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    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
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    • H01S2304/00—Special growth methods for semiconductor lasers
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    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04252—Electrodes, e.g. characterised by the structure characterised by the material
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    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18341—Intra-cavity contacts
    • H—ELECTRICITY
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    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H01S5/18369—Structure of the reflectors, e.g. hybrid mirrors based on dielectric materials

Definitions

  • the present invention relates to a vertical cavity type light emitting device using a semiconductor multilayer film reflector, particularly a vertical cavity type semiconductor light emitting device such as a vertical cavity type surface emitting laser (VCSEL).
  • the present invention also relates to a method for manufacturing the vertical resonator type light emitting element.
  • a vertical resonator type light emitting element using a distributed Bragg reflector is known.
  • DBR distributed Bragg reflector
  • a vertical cavity type surface emitting laser Very Cavity Surface Emitting Laser
  • DBRs having different reflectances are used on the back surface side and the exit surface side as a resonator mirror.
  • a semiconductor multilayer mirror composed of a plurality of semiconductor thin films is used as one DBR.
  • Patent Document 1 discloses a VCSEL using a semiconductor multilayer mirror in which an InAlN layer and a GaN layer are periodically laminated.
  • the present invention has been made in view of the above points, and a vertical cavity type light emitting device having low light mirror loss, high brightness and high light extraction efficiency, and a method for manufacturing the same, using a semiconductor multilayer film reflector. It is intended to be provided.
  • the method for producing a semiconductor laminated structure of the present invention is a manufacturing method for producing a semiconductor laminated structure by a metalorganic vapor phase growth method (MOCVD), which is an InAlN layer growth step for growing an InAlN layer and on the InAlN layer.
  • MOCVD metalorganic vapor phase growth method
  • the step of forming the semiconductor multilayer film by repeating the first GaN layer growing step of growing the first GaN layer at the first growth temperature a plurality of times, and after the formation of the semiconductor multilayer film, the nitrogen source gas and the nitrogen gas are supplied.
  • the first growth temperature is supplied while supplying the material gas of the n-type dopant. It is characterized by including a second GaN layer growth step of growing a second GaN layer on the GaN layer.
  • the method for manufacturing a vertical resonator type light emitting element of the present invention is an InAlN layer growth step in which an InAlN layer is grown by an organic metal vapor phase growth method (MOCVD) and a first GaN at a first growth temperature on the InAlN layer.
  • the first GaN layer growth step for growing the layer is repeated a plurality of times to form the semiconductor multilayer film to form the first multilayer film reflector, and after the semiconductor multilayer film is formed, the nitrogen source gas and the nitrogen gas are supplied.
  • the first growth temperature is supplied while supplying the material gas of the n-type dopant.
  • the vertical resonator type light emitting device of the present invention includes a first multilayer film reflector in which an InAlN layer and a first GaN layer are alternately and repeatedly laminated a plurality of times, and the uppermost layer of the first multilayer film reflector.
  • a second GaN layer formed on the final GaN layer, which is the first GaN layer, and containing an n-type dopant, a light emitting layer formed on the second GaN layer, and a light emitting layer formed on the light emitting layer.
  • the final GaN layer is characterized by containing no aluminum in a region near the surface facing the second GaN layer.
  • the InAlN layer growth step for growing the InAlN layer and the first GaN layer are grown on the InAlN layer at the first growth temperature by the organic metal vapor phase growth method (MOCVD).
  • MOCVD organic metal vapor phase growth method
  • the first GaN layer growth step is repeated a plurality of times to form a semiconductor multilayer film to form a first multilayer film reflector, and after the semiconductor multilayer film is formed, the nitrogen source gas and the nitrogen gas are supplied.
  • the step of raising the temperature to the second growth temperature which is a temperature higher than the first growth temperature, and the execution of the step of raising the temperature
  • the first GaN layer is supplied with the amount gas of the n-type dopant.
  • FIG. 1 is a cross-sectional view schematically showing a laminated structure of the VCSEL element 10 of the embodiment.
  • the substrate 11 is a substrate for growing GaN (gallium nitride) crystals (hereinafter, also simply referred to as a growth substrate).
  • the base layer 13 is made of undoped GaN and is formed on the substrate 11.
  • the semiconductor multilayer film 15 is a semiconductor multilayer film reflector (semiconductor multilayer film mirror) formed on the base layer 13.
  • the n-type semiconductor layer 17 is an n-type GaN layer formed on the semiconductor multilayer film reflector 15.
  • the n-type semiconductor layer 17 is doped with an n-type dopant such as Si.
  • the light emitting layer 20 is formed on the n-type semiconductor layer 17.
  • the light emitting layer 20 is, for example, a light emitting structure layer composed of a plurality of semiconductor layers having a multi-quantum well (MQW) structure.
  • MQW multi-quantum well
  • the p-type AlGaN layer 21 is an AlGaN layer doped with a p-type dopant such as Mg.
  • the p-type AlGaN layer 21 is formed on the light emitting layer 20 and functions as an electron block layer.
  • the p-type GaN layer 23 is a GaN layer formed on the p-type AlGaN layer 21 and doped with a p-type dopant such as Mg.
  • the p-type GaN contact layer 25 is a GaN layer formed on the p-type GaN layer 23 and doped with a p-type dopant such as Mg at a higher concentration than the p-type GaN layer 23.
  • the p-type AlGaN layer 21, the p-type GaN layer 23, and the p-type GaN contact layer 25 are collectively referred to as the p-type semiconductor layer 27.
  • a laminated structure composed of a semiconductor multilayer film 15, an n-type semiconductor layer 17, a light emitting layer 20, and a p-type semiconductor layer 27 as a first reflector is referred to as a semiconductor laminated structure 29.
  • the semiconductor laminated structure 29 includes an n-type semiconductor laminate in which the n-type semiconductor layer 17 is formed on the semiconductor multilayer film 15, and the light emitting layer 20 and the p-type semiconductor layer 27 are formed on the n-type semiconductor laminate. Are laminated and configured.
  • the VCSEL element 10 has an exposed portion 17E in which the n-type semiconductor layer 17 is partially exposed.
  • the n-electrode 31 is provided on the exposed portion 17E and is electrically connected to the n-type semiconductor layer 17.
  • the insulating film 33 is a layer having an insulating property formed on the p-type GaN contact layer 25, and has an opening OP.
  • the translucent electrode 35 is formed on the insulating film 33. Further, the translucent electrode 35 is formed on the p-type GaN contact layer 25 via the opening OP. The translucent electrode 35 is electrically connected to the p-type semiconductor layer 27.
  • the dielectric multilayer film 37 is provided on the translucent electrode 35 on the opening OP.
  • the dielectric multilayer film 37 is a dielectric multilayer film mirror in which two types of dielectric films having different refractive indexes, such as niobium oxide (Nb 2 O 5 ) and silicon oxide (SiO 2 ), are alternately laminated. ..
  • the p-electrode 39 is provided on the translucent electrode 35 and is electrically connected to the translucent electrode 35.
  • FIG. 2 is an enlarged view of a portion A surrounded by a broken line in FIG. 1, and is a cross-sectional view schematically showing a laminated structure of the semiconductor multilayer film 15.
  • the semiconductor multilayer film 15 is configured by alternately and repeatedly laminating InAlN layers 15A and GaN layers 15B on the base layer 13. With such a configuration, the uppermost layer of the semiconductor multilayer film 15 is GaN 15B.
  • the n-type semiconductor layer 17 is formed on the uppermost GaN layer (hereinafter, also referred to as the final GaN layer) 15B.
  • the semiconductor multilayer film 15 is a semiconductor distributed Bragg reflector (semiconductor DBR: Distributed Bragg reflectors). Specifically, the semiconductor multilayer film 15 is configured as a reflecting mirror (semiconductor multilayer mirror) having the emission wavelength of the light emitting layer 20 (for example, the emission wavelength in the air is 445 nm) as the reflection center wavelength.
  • DBR Distributed Bragg reflectors
  • the film thickness of each of the InAlN layer 15A and the GaN layer 15B is designed to have a 1/4 wavelength optical film thickness with respect to the reflection center wavelength.
  • the film thickness d A of the InAlN layer 15A is set to have a 1/4 wavelength optical film thickness with respect to the reflection center wavelength ⁇ . That is, the InAlN layer 15A is a ⁇ / 4 optical film having a refractive index n 1 and a film thickness d A.
  • the thickness d B of the GaN layer 15B is set to have a quarter wave optical thickness with respect to the reflection center wavelength lambda. That, GaN layer 15B is lambda / 4 optical film having a refractive index n 2 and thickness d B.
  • FIG. 3 is a flowchart showing an outline of the manufacturing process of the semiconductor laminated structure 29 and the VCSEL element 10 for use in manufacturing the VCSEL element 10.
  • the semiconductor laminated structure 29 was manufactured by a metalorganic chemical vapor deposition (MOCVD) method.
  • MOCVD metalorganic chemical vapor deposition
  • FIG. 4 is a cross-sectional view showing a state in which the substrate 11, the base layer 13, and the semiconductor multilayer film 15 are formed.
  • a C-plane GaN substrate was used as the substrate 11 which is a growth substrate.
  • C-plane sapphire, A-plane sapphire, R-plane sapphire, semi-polar (semi-polar) plane GaN, non-polar (non-polar) plane GaN, AlN, ZnO, Ga2O3, GaAs, Si, SiC, spinel (MgAl) 2 O 4 ) or the like may be used.
  • the substrate is surface-heated in hydrogen (H 2 ) gas (atmospheric gas) at 1000 ° C. After removing impurities, it is desirable to adjust the substrate temperature to 650 ° C. to grow the AlxGa1-xN buffer layer.
  • the substrate 11 is arranged on the susceptor in the semiconductor layer growth apparatus.
  • a thermocouple is arranged under the susceptor, and the temperature of the thermocouple is referred to as the "board temperature" in the present specification.
  • step S11 first, the temperature of the substrate 11 is raised to 1200 ° C., and trimethylgallium (hereinafter referred to as TMG) and ammonia (NH 3 ) gas are supplied in hydrogen (atmospheric gas) to be composed of undoped GaN.
  • TMG trimethylgallium
  • NH 3 ammonia
  • the formation 13 was grown by 100 nm. In the case of homoepitaxial growth, it is not always necessary to stack the base layer 13 and it is optional.
  • the semiconductor multilayer film 15 was formed.
  • a semiconductor DBR distributed Bragg reflectors made of an InAlN / GaN laminate was grown on the base layer 13. The details of the growth method of the semiconductor DBR are shown below as an example. The growth method of the semiconductor DBR is not limited to this, and other growth methods can also be applied.
  • the InAlN layer 15A was grown on the base layer 13.
  • the temperature of the substrate 11 was adjusted to 950 ° C., and the carrier gas (atmospheric gas) was changed from hydrogen gas to nitrogen (N 2 ) gas.
  • the carrier gas atmospheric gas
  • N 2 nitrogen
  • TMI trimethylindium
  • TMA trimethylaluminum
  • ammonia gas are supplied, and the InAlN layer 15A is 49 nm. grown.
  • the supply of TMI and TMA which are organometallic materials (hereinafter referred to as MO materials), was stopped.
  • the GaN layer 15B as the first GaN layer was grown on the InAlN layer 15A (first GaN layer growth step).
  • the substrate temperature was raised to 1100 ° C. (first growth temperature) for stabilization.
  • the carrier gas was changed from nitrogen gas to hydrogen gas, trimethylgallium (hereinafter referred to as TMG), which is a gallium material gas, and ammonia gas were supplied, and a GaN layer 15B was formed on the InAlN layer 15A at 45 nm. After that, the supply of TMG, which is an MO material, was stopped.
  • the In composition of the InAlN layer was adjusted to be about 18 at%.
  • the wafer (FIG. 4) formed up to the semiconductor multilayer film 15 was once taken out from the reactor, and the wavelength band of the reflected light of the semiconductor multilayer mirror was confirmed.
  • the wavelength band was confirmed by confirming the peak wavelength when white light was irradiated. From the confirmation results, adjustments were made to match the design value of the cavity length, if necessary.
  • the adjustment may be performed, for example, by changing the layer thickness of the n-type semiconductor layer 17 laminated on the semiconductor multilayer film 15.
  • the n-type semiconductor layer 17 and the light emitting layer 20 may be continuously laminated without taking out the wafer from the reaction furnace to manufacture the semiconductor laminated structure 29.
  • step S12 second GaN layer growth step
  • the carrier gas is changed from hydrogen gas to nitrogen gas before the n-type semiconductor layer 17 grows, and the temperature of the substrate 11 is raised from 1100 ° C. to 1200 ° C. (second growth temperature) for stabilization.
  • Second growth temperature the temperature of the substrate 11 is raised from 1100 ° C. to 1200 ° C.
  • Tempoture temperature rise step To change the carrier gas to nitrogen gas, the etching is prevented by of H 2 GaN layer of the semiconductor DBR final layer is to maintain a flat surface.
  • the carrier gas is changed from nitrogen gas to hydrogen gas, and TMG as a material gas for gallium, ammonia gas as a nitrogen source gas, and hydrogen as a material gas for n-type dopant and silicon-containing gas.
  • a dilution concentration of 10 ppm disilane (Si 2 H 6 ) was supplied, and a Si-doped n-type GaN layer (high-temperature n-GaN layer) was formed at 603 nm on the semiconductor multilayer film 15. Then stopping the supply of MO materials and Si 2 H 6. In this way, the n-type semiconductor layer 17 was formed.
  • FIG. 5 is a cross-sectional view showing a state (n-type semiconductor laminate) in which an n-type semiconductor layer 17 as a second GaN layer is formed on the semiconductor multilayer film 15.
  • the carrier gas is changed from nitrogen gas to hydrogen gas when the n-type semiconductor layer 17 is formed immediately before the start of growth in consideration of the arrival time of the gas. That is, it is preferable to start the supply of hydrogen gas and then start the supply of TMG as a material gas for gallium. For example, it is preferable to change the carrier gas 10 seconds before starting the supply of TMG, ammonia gas and disilane.
  • FIG. 6 is a diagram schematically showing the sequence of crystal growth of the semiconductor multilayer film 15 in step S11 and crystal growth of the n-type semiconductor layer 17 in step 12.
  • the horizontal axis represents time T.
  • the vertical axis in FIG. 6 indicates the substrate temperature (growth temperature) Ts.
  • an ON state or an OFF state indicating whether or not the gas is supplied is shown for each supply gas type as the substrate temperature Ts changes with time.
  • nitrogen (N 2 ) is supplied as a carrier gas at the substrate temperature TP1 (950 ° C.) (“ON” in the figure), and the group III MO materials TMA, TMI and V materials.
  • the growth of the GaN layer 15B on the InAlN layer 15A and the InAlN layer 15A was repeated, and the GaN layer (final GaN layer) 15B, which is the uppermost layer of the semiconductor multilayer film 15, was grown.
  • the supply of TMG is stopped (“OFF” in the figure), the carrier gas is switched from hydrogen gas (H 2 ) to nitrogen gas (N 2 ), and the nitrogen source is used.
  • the carrier gas was switched from nitrogen gas (N 2 ) to hydrogen gas (H 2 ), TMG, ammonia gas and disilane (Si 2 H 6 ) were supplied, and Si-doped n-type on the semiconductor multilayer film 15.
  • a GaN layer high temperature n-GaN layer
  • FIG. 7 is a cross-sectional view showing a state in which the light emitting layers 20 are laminated.
  • MQW MultiQuantum Well
  • the barrier layer and the well layer are made of InxAlyGa1-x-yN.
  • the carrier gas was changed from H 2 to N 2.
  • TEG Triethyl gallium
  • NH 3 Triethyl gallium
  • GaN barrier layer
  • TEG, TMI and NH 3 were supplied, and a well layer (InGaN) of 3.0 nm was formed on the barrier layer (GaN). After that, the supply of MO material was stopped.
  • the process group of the barrier layer laminating step and the well layer laminating step was repeated four more times to form an MQW consisting of a total of five pairs of the GaN barrier layer and the InGaN well layer.
  • TEG and NH 3 were supplied to form a final barrier layer of 10.0 nm. After that, the supply of MO material was stopped. The MQW was formed in this way to form the light emitting layer 20 (FIG. 7).
  • a superlattice structure (hereinafter, SLS: SuperLattice Structure) or a bulk strain relaxation layer (InGaN or the like) may be introduced into the question between the n-type semiconductor layer 17 and MQW. Further, the number of quantum wells in MQW is arbitrary by the designer, and the number of layers is not limited.
  • n-type doping such as Si or p-type doping such as magnesium (hereinafter, Mg) on the barrier layer of MQW.
  • Mg magnesium
  • FIG. 8 is a cross-sectional view showing a state in which the p-type semiconductor layer 27 is formed.
  • EBL Electron Blocking Layer
  • TMG, TMA, biscyclopentadienyl magnesium (hereinafter, Cp 2 Mg) and NH 3 were supplied, and a 20 nm-thick p-type AlGaN layer 21 (EBL) was formed on the light emitting layer 20. After that, the supply of MO material was stopped.
  • the temperature of the substrate was raised from 1000 ° C. to 1100 ° C. to stabilize the substrate temperature (carrier gas is H 2 ).
  • carrier gas is H 2 .
  • the Mg-doped p-type GaN layer 23 on the p-type AlGaN layer 21 was 72nm formed.
  • the carrier gas was changed from H 2 to N 2, and the temperature of the substrate was slowly lowered from 1100 ° C. to room temperature while continuing the supply of NH 3 . After the temperature was lowered, the grown wafer was taken out. In this way, the semiconductor laminated structure 29 was manufactured.
  • the VCSEL element 10 was manufactured by the element conversion step (step S15) using the semiconductor laminated structure 29.
  • each layer of the p-type semiconductor layer 27 (p-type AlGaN layer 21, p-type GaN layer 23, and p-type GaN contact layer 25) was desorbed from hydrogen to activate Mg, which is a p-type dopant.
  • a mesa pattern is formed by photoresist, and a mesa structure is formed by dry etching, while an n-type semiconductor layer 17 (high temperature n-GaN layer) is partially formed around the mesa structure.
  • An exposed portion 17E (see FIG. 1) that was specifically exposed was formed. Then the photoresist was removed.
  • an insulating film 33 was formed on the mesa structure and the exposed portion 17E at 150 nm by sputtering. Silicon oxide (hereinafter referred to as SiO 2 ) was used for the insulating film 33.
  • a pattern is formed with a photoresist, etching treatment is performed with buffered hydrofluoric acid (hereinafter, BHF), and an opening OP is formed in the insulating film 33 on the mesa structure as a light emitting opening. Was formed. Then the photoresist was removed.
  • BHF buffered hydrofluoric acid
  • ITO Indium Tin Oxide
  • a pattern is formed with a photoresist, ITO is etched with a mixed acid, and a translucent electrode is formed on the insulating film 33 on the mesa structure and the contact layer exposed at the opening. 35 was formed. After that, the photoresist was removed and heat treatment was performed by RTA to make ITO transparent and improve the conductivity.
  • a pattern was formed with a photoresist, washed with pure water, and dried.
  • a p-side metal layer (p-electrode 39) that does not cover the opening was formed on the transparent electrode by electron beam (hereinafter, EB) vapor deposition at about 300 nm.
  • EB electron beam
  • an n-electrode pattern was formed with a photoresist, washed with pure water, and dried.
  • an n-electrode 31 electrically connected to an exposed portion where the high-temperature n-GaN layer (n-type semiconductor layer 17) was partially exposed was formed at about 700 nm.
  • a laminate of Ti, Al, Pt, and Au was used for the n electrode. Then, after lifting off with a chemical, the photoresist was removed.
  • the grown wafer was organically washed and dried again.
  • a dielectric multilayer film 37 dielectric multilayer mirror, hereinafter also referred to as a dielectric DBR
  • a dielectric DBR dielectric multilayer mirror
  • a dielectric DBR pattern was formed with a photoresist, washed with pure water, and dried.
  • the thickness of the first Nb 2 O 5 layer is about 37.5 nm, and together with about 17 nm of the translucent electrode 35, occupies 0.3 wavelength (0.3 ⁇ ) with respect to the wavelength of 445 nm.
  • the distance from the center of the third pair of well layers to the final GaN layer (semiconductor DBR final layer) of the semiconductor DBR is 4.0 wavelengths (4.0 ⁇ ), from the center.
  • the contact layer has 0.7 wavelengths (0.7 ⁇ )
  • the final GaN layer (semiconductor DBR final layer) of the semiconductor DBR (semiconductor multilayer film 15) to the p-type GaN contact layer 25 has 4.7 wavelengths (4.7).
  • the film thickness is ⁇ ).
  • the remaining 0.3 wavelengths (0.3 ⁇ ) are used in the translucent electrode 35 and the first layer of the dielectric DBR, and the resonator length is 5 ⁇ .
  • the present invention is not limited to this.
  • the emission wavelength is changed, the total film thickness to be laminated changes.
  • the designed resonator length is also arbitrary, it is not limited to 5 times as long as it is an integral multiple of the oscillation wavelength.
  • a pattern was formed with a photoresist, washed with pure water, and dried.
  • a further p-side metal layer (not shown) electrically connected to the p-electrode was formed at about 2200 nm.
  • a laminated body of Ti, Pt, and Au was used for the p electrode (p pad layer).
  • it was lifted off with a chemical to remove the photoresist. In this way, the VCSEL element 10 shown in FIG. 1 was manufactured.
  • the flatness and composition of the surface of the GaN layer (final GaN layer) 15B, which is the uppermost layer of the semiconductor multilayer film 15, were evaluated.
  • the temperature rise step (T9 to T10) in which the temperature is raised to the substrate temperature TP3.
  • the wafers taken out from the reactor were evaluated.
  • the temperature raising step as shown in FIG. 6, the temperature was raised while using nitrogen gas as the carrier gas and supplying ammonia gas as the nitrogen source gas.
  • FIG. 9 shows an SPM image of the evaluation sample. From FIG. 9, it can be seen that a smooth surface of the final GaN layer 15B is obtained.
  • the surface roughness of the evaluation sample was Rms 0.49 nm.
  • FIG. 10 shows an SPM image of Comparative Sample 1.
  • the surface roughness of the final GaN layer 15B tends to be larger in the comparative sample 1 than in the case of the evaluation sample.
  • the surface roughness of Comparative Sample 1 was Rms 4.1 nm.
  • the surface roughness of Comparative Sample 2 was Rms 0.49 nm (not shown).
  • the surface roughness (Rms 0.49 nm) of the comparative sample 2 that is, the surface roughness before the temperature raising step was maintained.
  • the surface roughness was larger than that in the evaluation sample and the comparative sample 2.
  • the film thickness of the final GaN layer 15B tended to decrease.
  • the film thickness of the final GaN layer 15 was reduced by about 38%.
  • Comparative Sample 1 As described above, the supply of ammonia gas was continued, and the temperature rising step was executed using the carrier gas as hydrogen gas. It is considered that the nGaN layer 17 was etched by using hydrogen gas as the carrier gas, resulting in surface roughness and a decrease in film thickness.
  • the surface of the final GaN layer 15B is exposed to a hydrogen gas atmosphere, so that the nitrogen atoms in the final GaN layer 15B are bonded to the hydrogen gas and desorbed from the final GaN layer 15B. It is conceivable to do. It is also possible that this effect causes GaN to decompose and the crystallinity of GaN to decline.
  • the supply of ammonia gas was continued and the temperature rising step was executed using the carrier gas as nitrogen gas. It is considered that the etching of the nGaN layer 17 was suppressed by using nitrogen gas as the carrier gas, and the surface roughness and the decrease in film thickness were suppressed. More specifically, it is presumed that the desorption of nitrogen atoms from the final GaN layer 15B and the decomposition of GaN could be prevented by creating a nitrogen gas atmosphere in the reaction furnace during the temperature raising step.
  • the nitrogen atom is supplemented by the ammonia gas. It is considered that the desorption of nitrogen atoms from the GaN layer can be suppressed.
  • the semiconductor multilayer film 15 having high flatness of the final GaN layer 15B can be manufactured, and a smooth reflective surface of the semiconductor multilayer film 15 as a semiconductor DBR can be obtained. Further, by suppressing the etching of the final GaN layer 15B, the semiconductor multilayer film 15 can be manufactured with the thickness as designed, and the semiconductor DBR having high reflection characteristics as designed can be obtained.
  • the flatness of the final GaN layer 15B by improving the flatness of the final GaN layer 15B, the flatness of the nGaN layer 17, the light emitting layer 20, the p-type semiconductor layer 27, and the dielectric multilayer film 37 laminated on the semiconductor multilayer film 15 can also be improved. ..
  • FIG. 11 is a graph showing the composition analysis results of the wafer of the comparative sample 1 by the secondary ion mass spectrometry (SIMS) near the interface between the final GaN layer 15B and the nGaN layer 17.
  • SIMS secondary ion mass spectrometry
  • a peak of aluminum appears near the interface between the nGaN layer 17 and the final GaN layer 15B. It is considered that the peak of the aluminum is due to the diffusion of aluminum contained in the InAlN layer 15A.
  • Comparative Sample 1 it is also considered that the nitrogen atoms are likely to be desorbed in the hydrogen atmosphere during the temperature raising step, and the crystallinity of GaN is lowered, so that aluminum is easily diffused.
  • the composition of the GaN layer 15B is not as designed.
  • FIG. 12 is a graph showing the results of SIMS analysis near the interface between the final GaN layer 15B and the nGaN layer 17 for the wafer of the evaluation sample. As shown in FIG. 12, the peak of aluminum (Al) as seen in FIG. 11 does not appear in the final GaN layer 15B.
  • the aluminum contained in the InAlN layer 15A is not diffused in the final GaN layer 15B. Therefore, it can be said that the final GaN layer 15B does not contain aluminum derived from the InAlN layer 15A. Further, it can be seen that the final GaN layer 15B does not contain aluminum in the region near the surface facing the nGaN layer 17.
  • the film thickness decrease of the final GaN layer 15B was suppressed during the temperature raising step. It is presumed that one of the factors that suppressed the diffusion of aluminum is that the InAlN layer 15A was less likely to be exposed to a high temperature because the film thickness did not decrease during the temperature raising step.
  • ammonia gas is used as a nitrogen source during the above-mentioned temperature raising step
  • the present invention is not limited to this, and a gas species capable of supplementing nitrogen atoms when nitrogen atoms are desorbed from the GaN layer is not limited to this. It should be.
  • it may be a nitrogen source gas such as hydrazine (N 2 H 2 ).
  • a smooth surface of the final GaN layer 15B can be obtained even when the final GaN layer 15B of the semiconductor multilayer film 15 undergoes the temperature raising step, and the design
  • the final GaN layer 15B can be formed with the same film thickness and composition as designed.
  • a semiconductor laminated structure 29 having high smoothness can be obtained. Therefore, the controllability of the semiconductor multilayer mirror reflectance is good, and the semiconductor laminated structure can be manufactured with a high yield.
  • the manufacturing method of the present invention by forming the dielectric multilayer film 37 on the semiconductor laminated structure 29, a semiconductor having a highly smooth reflecting surface and having a film thickness and composition as designed.
  • a VCSEL device including a multilayer mirror can be manufactured. Therefore, it is possible to provide a vertical resonator type light emitting device having low light mirror loss, high brightness and high light extraction efficiency, and a method for manufacturing the same, by using a semiconductor multilayer film reflector.

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Abstract

L'invention concerne un procédé de production pour produire une structure stratifiée de semi-conducteur par dépôt chimique en phase vapeur organométallique (MOCVD), caractérisé en ce qu'il comprend : une étape consistant à répéter plusieurs fois une étape de croissance de couche d'InAlN consistant à faire croître une couche d'InAlN et une première étape de croissance de couche de GaN de croissance, à une première température de croissance, une première couche de GaN sur la couche d'InAlN, pour former un film multicouche semi-conducteur ; une étape d'élévation de température, après la formation du film multicouche semi-conducteur, de l'élévation de la température à une seconde température de croissance qui est une température plus élevée que la première température de croissance, tout en fournissant un gaz source d'azote et un gaz azote ; et une seconde étape de croissance de couche de GaN, après réalisation de l'étape d'élévation de température, de croissance d'une seconde couche de GaN sur la première couche de GaN tout en fournissant un gaz de matériau dopant de type n.
PCT/JP2020/018402 2019-05-15 2020-05-01 Élément d'émission de surface de cavité verticale utilisant un miroir de réflexion de film multicouche semi-conducteur, et son procédé de production WO2020230669A1 (fr)

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CN115313154A (zh) * 2022-08-30 2022-11-08 电子科技大学 一种垂直腔面发射激光器及其制备方法
WO2023106080A1 (fr) * 2021-12-07 2023-06-15 スタンレー電気株式会社 Élément électroluminescent à cavité verticale
WO2024084898A1 (fr) * 2022-10-17 2024-04-25 スタンレー電気株式会社 Élément électroluminescent à cavité verticale
WO2024181093A1 (fr) * 2023-02-28 2024-09-06 スタンレー電気株式会社 Dispositif électroluminescent de type à résonance verticale et procédé de fabrication de dispositif électroluminescent de type à résonance verticale

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CN113921375A (zh) * 2021-08-25 2022-01-11 厦门市三安集成电路有限公司 一种SiC基GaN外延结构的制作方法

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WO2023106080A1 (fr) * 2021-12-07 2023-06-15 スタンレー電気株式会社 Élément électroluminescent à cavité verticale
CN115313154A (zh) * 2022-08-30 2022-11-08 电子科技大学 一种垂直腔面发射激光器及其制备方法
WO2024084898A1 (fr) * 2022-10-17 2024-04-25 スタンレー電気株式会社 Élément électroluminescent à cavité verticale
WO2024181093A1 (fr) * 2023-02-28 2024-09-06 スタンレー電気株式会社 Dispositif électroluminescent de type à résonance verticale et procédé de fabrication de dispositif électroluminescent de type à résonance verticale

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