WO2020195523A1 - チップ型セラミック電子部品およびその製造方法 - Google Patents
チップ型セラミック電子部品およびその製造方法 Download PDFInfo
- Publication number
- WO2020195523A1 WO2020195523A1 PCT/JP2020/008132 JP2020008132W WO2020195523A1 WO 2020195523 A1 WO2020195523 A1 WO 2020195523A1 JP 2020008132 W JP2020008132 W JP 2020008132W WO 2020195523 A1 WO2020195523 A1 WO 2020195523A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- glass
- conductive paste
- free
- chip
- sintered layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G13/00—Apparatus specially adapted for manufacturing capacitors; Processes specially adapted for manufacturing capacitors not provided for in groups H01G4/00 - H01G11/00
- H01G13/006—Apparatus or processes for applying terminals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/30—Stacked capacitors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/60—Capacitors
- H10D1/68—Capacitors having no potential barriers
- H10D1/692—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
- H01B1/026—Alloys based on copper
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
- H01G4/1209—Ceramic dielectrics characterised by the ceramic dielectric material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
- H01G4/1209—Ceramic dielectrics characterised by the ceramic dielectric material
- H01G4/1218—Ceramic dielectrics characterised by the ceramic dielectric material based on titanium oxides or titanates
- H01G4/1227—Ceramic dielectrics characterised by the ceramic dielectric material based on titanium oxides or titanates based on alkaline earth titanates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/228—Terminals
- H01G4/232—Terminals electrically connecting two or more layers of a stacked or rolled capacitor
- H01G4/2325—Terminals electrically connecting two or more layers of a stacked or rolled capacitor characterised by the material of the terminals
Definitions
- the present invention relates to a chip-type ceramic electronic component and a method for manufacturing the same, and more particularly to a structure of an external electrode formed on the surface of a ceramic element provided in the chip-type ceramic electronic component and a method for forming the external electrode.
- electrodes are formed.
- the stress that can cause cracks in the ceramic body is first absorbed by peeling from the resin electrode or destruction of the resin electrode itself. , It is possible to prevent the ceramic body from cracking.
- the external electrode includes a glass-free sintered layer that does not contain glass.
- the step of preparing the conductive paste includes a step of preparing a glass-free conductive paste containing nickel powder, a metal powder having a melting point of less than 500 ° C. and a thermosetting resin, but does not contain glass.
- the step of applying the glass-free conductive paste includes a step of applying the glass-free conductive paste so as to cover a part of the surface of the ceramic body.
- the ceramic element coated with the glass-free conductive paste is 400 ° C. higher than the curing temperature of the thermosetting resin. It is characterized by including a step of heat treatment at a temperature higher than the temperature.
- the illustrated external electrode that is, the first external electrode 11, is formed on the first end surface 7 which is a part of the surface of the ceramic element 3, and is electrically connected to the first internal electrode 9.
- the second external electrode formed so as to face the first external electrode 11 is formed on the second end face which is a part of the surface of the ceramic element 3, and the second internal electrode 10 is formed. Is electrically connected to.
- the first external electrode 11 and the second external electrode have substantially the same configuration. Therefore, the configuration of the first external electrode 11 will be described in detail below, and the configuration of the second external electrode will be omitted.
- the ceramic element 3 has already been sintered, and the step of heat-treating the ceramic element 3 coated with the conductive paste is not for sintering the ceramic element 3, that is, it is conductive. It is not for simultaneous firing of the paste and the ceramic element 3. This heat treatment is exclusively for sintering or curing the conductive paste.
- thermosetting resin a solvent such as diethylene glycol monobutyl ether or diethylene glycol monoethyl ether is added to the thermosetting resin.
- the metal sintered body 13 is made of nickel, tin and silver. And when the metal powder containing copper and having a melting point of less than 500 ° C. contains tin and bismuth, the metal sintered body 13 contains nickel, tin and bismuth.
- the heat treatment implementation time and the oxygen concentration in the heat treatment atmosphere are appropriately adjusted so that the above-mentioned state can be obtained in the glass-free sintered layer 12.
- the external electrode 11a is formed on the first glass-free sintered layer 12 when the above-mentioned glass-free sintered layer 12 is used as the first glass-free sintered layer 12. It is characterized by further containing a second glass-free sintered layer 18 that does not contain glass.
- FIG. 3 schematically shows a part of a multilayer ceramic capacitor 1b as a chip-type ceramic electronic component according to a third embodiment of the present invention in a cross-sectional view.
- the elements corresponding to the elements shown in FIG. 1 are designated by the same reference numerals, and duplicate description will be omitted.
- the laminated ceramic capacitor 1b is characterized in that the external electrode 11b further includes a resin-containing conductor layer 19 formed on the glass-free sintered layer 12.
- the glass-free sintered layer 12 is first formed by being applied to a thickness of 5 to 30 ⁇ m, dried at 150 ° C., and heat-treated at, for example, 850 ° C.
- the layer 12 not only has voids 14 and carbon 15 derived from the heat-curable resin, but also has nickel powder and a melting point.
- the layer 12 has voids 14 and carbon 15 derived from the heat-curable resin, but also has nickel powder and a melting point.
- samples 1 to 7 on which a glass-free sintered layer used as an external electrode was formed were subjected to a moisture resistance load test in which a temperature of 125 ° C., a relative humidity of 95%, and an applied voltage of 5 V were applied for 144 hours. "Gender” was evaluated. Regarding “moisture-resistant load reliability”, if the insulation resistance did not decrease, it was evaluated as “ ⁇ ”, and if it decreased, it was evaluated as "x".
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Ceramic Capacitors (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021508856A JP7136334B2 (ja) | 2019-03-28 | 2020-02-27 | チップ型セラミック電子部品およびその製造方法 |
| CN202080024137.4A CN113614866B (zh) | 2019-03-28 | 2020-02-27 | 芯片型陶瓷电子部件及其制造方法 |
| KR1020217026670A KR102558658B1 (ko) | 2019-03-28 | 2020-02-27 | 칩형 세라믹 전자부품의 제조 방법 |
| KR1020237022740A KR102678767B1 (ko) | 2019-03-28 | 2020-02-27 | 칩형 세라믹 전자부품 |
| US17/405,064 US12243689B2 (en) | 2019-03-28 | 2021-08-18 | Chip ceramic electronic component and method for manufacturing the same |
| US18/625,324 US12278050B2 (en) | 2019-03-28 | 2024-04-03 | Chip ceramic electronic component and method for manufacturing the same |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2019062901 | 2019-03-28 | ||
| JP2019-062901 | 2019-03-28 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US17/405,064 Continuation US12243689B2 (en) | 2019-03-28 | 2021-08-18 | Chip ceramic electronic component and method for manufacturing the same |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2020195523A1 true WO2020195523A1 (ja) | 2020-10-01 |
Family
ID=72608992
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/JP2020/008132 Ceased WO2020195523A1 (ja) | 2019-03-28 | 2020-02-27 | チップ型セラミック電子部品およびその製造方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US12243689B2 (https=) |
| JP (1) | JP7136334B2 (https=) |
| KR (2) | KR102558658B1 (https=) |
| CN (1) | CN113614866B (https=) |
| WO (1) | WO2020195523A1 (https=) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPWO2022065004A1 (https=) * | 2020-09-25 | 2022-03-31 | ||
| US20230005656A1 (en) * | 2016-04-21 | 2023-01-05 | Tdk Corporation | Electronic component |
| US12505950B2 (en) * | 2015-01-30 | 2025-12-23 | Samsung Electro-Mechanics Co., Ltd. | Electronic component, and method of manufacturing thereof |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7136333B2 (ja) * | 2019-03-28 | 2022-09-13 | 株式会社村田製作所 | チップ型セラミック電子部品およびその製造方法 |
| KR102911094B1 (ko) * | 2021-02-05 | 2026-01-13 | 삼성전기주식회사 | 적층 세라믹 전자부품 |
| JP2023099275A (ja) * | 2021-12-30 | 2023-07-12 | サムソン エレクトロ-メカニックス カンパニーリミテッド. | セラミック電子部品 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05290622A (ja) * | 1992-04-09 | 1993-11-05 | Sumitomo Metal Mining Co Ltd | Niペースト組成物 |
| JP2015109411A (ja) * | 2013-10-25 | 2015-06-11 | 株式会社村田製作所 | セラミック電子部品 |
| JP2018098327A (ja) * | 2016-12-13 | 2018-06-21 | 太陽誘電株式会社 | 積層セラミックコンデンサおよびその製造方法 |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1051862C (zh) * | 1991-04-20 | 2000-04-26 | 旭化成工业株式会社 | 高温烧结用糊剂及其应用 |
| JP2000216046A (ja) * | 1999-01-26 | 2000-08-04 | Murata Mfg Co Ltd | 積層セラミック電子部品 |
| JP4083971B2 (ja) * | 2000-11-22 | 2008-04-30 | Tdk株式会社 | 積層セラミック電子部品及びその製造方法 |
| CN100383899C (zh) * | 2003-01-30 | 2008-04-23 | 广东风华高新科技股份有限公司 | 高频多层片式陶瓷电容器的制造方法 |
| CN100583328C (zh) * | 2004-04-23 | 2010-01-20 | 株式会社村田制作所 | 电子元件及其制造方法 |
| WO2007072894A1 (ja) * | 2005-12-22 | 2007-06-28 | Namics Corporation | 熱硬化性導電ペースト及びそれを用いて形成した外部電極を有する積層セラミック部品 |
| JP5266874B2 (ja) | 2008-05-23 | 2013-08-21 | パナソニック株式会社 | セラミック電子部品の製造方法 |
| JP5211970B2 (ja) * | 2008-09-17 | 2013-06-12 | 株式会社村田製作所 | セラミック電子部品の製造方法 |
| JP5251589B2 (ja) * | 2009-02-24 | 2013-07-31 | 株式会社村田製作所 | セラミックコンデンサの製造方法 |
| CN102044344A (zh) * | 2009-10-13 | 2011-05-04 | 东莞市长凌电子材料有限公司 | 贴片电容 |
| KR20110067509A (ko) * | 2009-12-14 | 2011-06-22 | 삼성전기주식회사 | 외부전극용 도전성 페이스트 조성물, 이를 포함하는 적층 세라믹 커패시터 및 그 제조방법 |
| WO2012111479A1 (ja) * | 2011-02-16 | 2012-08-23 | 株式会社 村田製作所 | 導電性ペースト、太陽電池、及び太陽電池の製造方法 |
| KR20130005518A (ko) * | 2011-07-06 | 2013-01-16 | 삼성전기주식회사 | 내부전극용 도전성 페이스트 조성물 및 이를 포함하는 적층 세라믹 전자부품 |
| KR20140012322A (ko) * | 2012-07-19 | 2014-02-03 | 삼성전기주식회사 | 적층 세라믹 전자 부품 및 그 제조 방법 |
| JP2015046644A (ja) * | 2014-12-11 | 2015-03-12 | 株式会社村田製作所 | 積層セラミック電子部品 |
| TWI665691B (zh) * | 2017-01-25 | 2019-07-11 | 禾伸堂企業股份有限公司 | 積層陶瓷電容器及其製造方法 |
| KR101941954B1 (ko) * | 2017-07-04 | 2019-01-24 | 삼성전기 주식회사 | 적층 세라믹 커패시터 |
| JP6787364B2 (ja) * | 2018-05-16 | 2020-11-18 | 株式会社村田製作所 | 導電性ペースト |
-
2020
- 2020-02-27 WO PCT/JP2020/008132 patent/WO2020195523A1/ja not_active Ceased
- 2020-02-27 KR KR1020217026670A patent/KR102558658B1/ko active Active
- 2020-02-27 CN CN202080024137.4A patent/CN113614866B/zh active Active
- 2020-02-27 JP JP2021508856A patent/JP7136334B2/ja active Active
- 2020-02-27 KR KR1020237022740A patent/KR102678767B1/ko active Active
-
2021
- 2021-08-18 US US17/405,064 patent/US12243689B2/en active Active
-
2024
- 2024-04-03 US US18/625,324 patent/US12278050B2/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05290622A (ja) * | 1992-04-09 | 1993-11-05 | Sumitomo Metal Mining Co Ltd | Niペースト組成物 |
| JP2015109411A (ja) * | 2013-10-25 | 2015-06-11 | 株式会社村田製作所 | セラミック電子部品 |
| JP2018098327A (ja) * | 2016-12-13 | 2018-06-21 | 太陽誘電株式会社 | 積層セラミックコンデンサおよびその製造方法 |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US12505950B2 (en) * | 2015-01-30 | 2025-12-23 | Samsung Electro-Mechanics Co., Ltd. | Electronic component, and method of manufacturing thereof |
| US20230005656A1 (en) * | 2016-04-21 | 2023-01-05 | Tdk Corporation | Electronic component |
| US12224104B2 (en) * | 2016-04-21 | 2025-02-11 | Tdk Corporation | Electronic component |
| JPWO2022065004A1 (https=) * | 2020-09-25 | 2022-03-31 | ||
| JP7494925B2 (ja) | 2020-09-25 | 2024-06-04 | 株式会社村田製作所 | チップ型セラミック電子部品およびその製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR102558658B1 (ko) | 2023-07-24 |
| US12243689B2 (en) | 2025-03-04 |
| CN113614866B (zh) | 2023-06-27 |
| US20210375545A1 (en) | 2021-12-02 |
| JP7136334B2 (ja) | 2022-09-13 |
| US12278050B2 (en) | 2025-04-15 |
| JPWO2020195523A1 (https=) | 2020-10-01 |
| KR20210114531A (ko) | 2021-09-23 |
| US20240266112A1 (en) | 2024-08-08 |
| KR20230107899A (ko) | 2023-07-18 |
| KR102678767B1 (ko) | 2024-06-26 |
| CN113614866A (zh) | 2021-11-05 |
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