WO2020179633A1 - スイッチの駆動装置 - Google Patents

スイッチの駆動装置 Download PDF

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Publication number
WO2020179633A1
WO2020179633A1 PCT/JP2020/008108 JP2020008108W WO2020179633A1 WO 2020179633 A1 WO2020179633 A1 WO 2020179633A1 JP 2020008108 W JP2020008108 W JP 2020008108W WO 2020179633 A1 WO2020179633 A1 WO 2020179633A1
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WIPO (PCT)
Prior art keywords
switch
switches
voltage
state
overcurrent
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PCT/JP2020/008108
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English (en)
French (fr)
Japanese (ja)
Inventor
雅之 丹羽
蘭　明文
Original Assignee
株式会社デンソー
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Priority to CN202080017939.2A priority Critical patent/CN113544953B/zh
Publication of WO2020179633A1 publication Critical patent/WO2020179633A1/ja

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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of AC power input into DC power output; Conversion of DC power input into AC power output
    • H02M7/42—Conversion of DC power input into AC power output without possibility of reversal
    • H02M7/44—Conversion of DC power input into AC power output without possibility of reversal by static converters
    • H02M7/48—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/567—Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors

Definitions

  • This disclosure relates to a switch drive device.
  • Patent Document 1 a drive device for driving an IGBT composed of Si devices is known. This drive device protects the IGBT by switching the IGBT to the off state when it is determined that an overcurrent has flowed to the IGBT.
  • a driving device there is also a driving device that drives an IGBT and a MOSFET that is connected in parallel to the IGBT and is composed of a SiC device.
  • the short-circuit withstand capability of the MOSFET is lower than the short-circuit withstand capability of the IGBT. Therefore, there is a demand for a technique capable of appropriately protecting a MOSFET having a low short circuit resistance when an overcurrent flows in a parallel connection body of the MOSFET and the IGBT.
  • the main object of the present disclosure is to provide a switch drive device capable of appropriately protecting a switch having the smallest short-circuit tolerance among a plurality of switches connected in parallel with each other from overcurrent.
  • the present disclosure relates to a switch drive device that controls drive of a plurality of switches connected in parallel to each other.
  • the plurality of said switches include switches having different short circuit tolerances.
  • a determination unit that determines that an overcurrent has flowed through at least one of the plurality of switches, When it is determined by the determination unit that an overcurrent has flowed, an overcurrent protection unit for switching a plurality of the switches to an off state is provided.
  • the overcurrent protection unit first switches the minimum withstand voltage switch, which is the switch with the smallest short circuit withstand capability, to the off state among the plurality of the switches.
  • the minimum withstand voltage switch of the plurality of switches is first switched to the OFF state, so that the time during which an overcurrent flows through the minimum withstand voltage switch can be shortened.
  • the energy generated by the minimum withstand voltage switch from the time when it is determined that the overcurrent has flowed until the minimum withstand voltage switch is switched to the off state can be reduced, and the energy can be made equal to or less than the short circuit withstand capability of the minimum withstand voltage switch.
  • the minimum withstand voltage switch can be adequately protected from overcurrent.
  • FIG. 1 is an overall configuration diagram of the control system according to the first embodiment.
  • FIG. 2 is a diagram showing the current-voltage characteristics of the first and second switches.
  • FIG. 3 is a diagram showing a drive circuit and its peripheral configuration.
  • FIG. 4 is a flowchart showing a processing procedure of the break circuit.
  • FIG. 5 is a time chart showing an example of the overcurrent protection operation.
  • FIG. 6 is a time chart showing an example of the overcurrent protection operation.
  • FIG. 7 is a time chart showing an example of the overcurrent protection operation according to Comparative Example 1.
  • FIG. 8 is a time chart showing an example of the overcurrent protection operation according to Comparative Example 2.
  • FIG. 9 is a flowchart showing a processing procedure of the break circuit according to the second embodiment.
  • FIG. 10 is a flowchart showing a processing procedure of the break circuit according to the third embodiment.
  • the control system includes a DC power supply 10, an inverter 20, a rotating electric machine 30, and a control device 40.
  • the rotary electric machine 30 is, for example, an in-vehicle main engine.
  • the rotary electric machine 30 is electrically connected to the DC power supply 10 via the inverter 20.
  • a three-phase rotary electric machine 30 is used.
  • the rotary electric machine 30, for example, a permanent magnet synchronous machine can be used.
  • the DC power supply 10 is a storage battery having a terminal voltage of, for example, 100 V or more.
  • the DC power supply 10 is, for example, a secondary battery such as a lithium ion storage battery or a nickel hydrogen storage battery.
  • a capacitor 11 is connected in parallel to the DC power supply 10.
  • the inverter 20 is provided with upper and lower arm switch portions 20H and 20L corresponding to each phase.
  • the upper arm switch unit 20H and the lower arm switch unit 20L are connected in series.
  • the first end of the winding 31 of the rotary electric machine 30 is connected to the connection point between the upper arm switch unit 20H and the lower arm switch unit 20L.
  • the second end of the winding 31 of each phase is connected at a neutral point.
  • Each of the switch units 20H and 20L includes a parallel connection body of the first switch SW1 and the second switch SW2.
  • the positive electrode side of the DC power supply 10 is connected to the high potential side terminals of the first switch SW1 and the second switch SW2 of the upper arm switch unit 20H.
  • the negative side of the DC power supply 10 is connected to the low potential side terminals of the first switch SW1 and the second switch SW2 of the lower arm switch section 20L.
  • the high potential side terminals of the first switch SW1 and the second switch SW2 of the lower arm switch section 20L are connected to the low potential side terminals of the first switch SW1 and the second switch SW2 of the upper arm switch section 20H, respectively. It is connected.
  • the first switch SW1 is an N-channel MOSFET as a SiC device. Therefore, in the first switch SW1, the low potential side terminal is the source and the high potential side terminal is the drain.
  • the second switch SW2 is an IGBT as a Si device. Therefore, in the second switch SW2, the low potential side terminal is the emitter and the high potential side terminal is the collector.
  • a freewheel diode is connected in antiparallel to the second switch SW2, and a body diode is formed in the first switch SW1.
  • FIG. 2 is a diagram showing the relationship between the current flowing through the switch and the voltage Von between the high and low potential side terminals of the switch. Specifically, FIG. 2 shows the voltage-current characteristics of the drain-source voltage Vds and the drain current Id of the MOSFET, and the voltage-current characteristics of the collector-emitter voltage Vce and the collector current Ic of the IGBT.
  • the drain-source voltage Vds for the drain current Id is lower than the collector-emitter voltage Vce for the collector current Ic. That is, in the small current region, the on resistance of the MOSFET is smaller than the on resistance of the IGBT. Therefore, in the small current region, a large amount of current flows in the MOSFET among the MOSFET and the IGBT connected in parallel with each other.
  • the collector-emitter voltage Vce with respect to the collector current Ic is lower than the drain-source voltage Vds with respect to the drain current Id.
  • the on-resistance of the IGBT is smaller than the on-resistance of the MOSFET. Therefore, in the large current region, a large amount of current flows in the IGBT among the MOSFET and the IGBT connected in parallel with each other.
  • the short-circuit tolerance of the first switch SW1 is lower than the short-circuit tolerance of the second switch SW2.
  • the short circuit withstand capability is the time from when the overcurrent starts flowing through the first switch SW1 to when the first switch SW1 is destroyed, or after the overcurrent starts flowing through the first switch SW1. It is energy (specifically, current ⁇ voltage time integrated value) generated in the first switch SW1 until the destruction of the first switch SW1.
  • the rated current of the drain current of the first switch SW1 is smaller than the rated current of the collector current of the second switch SW2, for example.
  • the control device 40 drives the inverter 20 to control the control amount of the rotating electric machine 30 to the command value.
  • the control amount is, for example, torque.
  • the control device 40 drives the drive signals Gc corresponding to the switches SW1 and SW2 to drive the switches SW1 and SW2 of the inverter 20 to the drive circuits 50 individually provided to the switch units 20H and 20L. Output to.
  • the control device 40 generates the drive signal Gc corresponding to each drive circuit 50, for example, by the PWM processing based on the magnitude comparison of the three-phase command voltage and the carrier signal such as a triangular wave whose phases are different from each other by 120° in electrical angle. ..
  • the drive signal Gc takes either an on command for instructing on driving of the switch or an off command for instructing off driving.
  • the drive signal on the upper arm side and the corresponding drive signal on the lower arm side are alternately turned on commands. Therefore, in each phase, the switch of the upper arm switch unit 20H and the switch of the lower arm switch unit 20L are alternately turned on.
  • the control system includes a break circuit 60.
  • the cutoff circuit 60 divides the drive signal Gc output from the control device 40 into a first drive signal G1 corresponding to the first switch SW1 and a second drive signal G2 corresponding to the second switch SW2, and the drive circuit Output to 50.
  • the control device 40 and the cutoff circuit 60 are provided in the low voltage system, and the drive circuit 50 is provided in the high voltage system electrically insulated from the low voltage system.
  • the signal exchange between the cutoff circuit 60 and the drive circuit 50 is, for example, an optical insulation element (for example, a photocoupler) or magnetic insulation capable of transmitting a signal while electrically insulating between the low voltage system and the high voltage system. It may be carried out using an element (for example, a magnetic coupler).
  • control device 40 the drive circuit 50, and the break circuit 60 may be provided by, for example, software recorded in a physical memory device and a computer, hardware, or a combination thereof that executes the software. it can.
  • the drive circuit 50 includes a first charging switch 70, a first constant voltage power source 71, a first charging resistor 72, and a first balance resistor 73.
  • a P-channel MOSFET is used as the first charging switch 70.
  • the first constant voltage power supply 71 is connected to the source of the first charging switch 70, and the first end of the first charging resistor 72 is connected to the drain of the first charging switch 70.
  • the first end of the first balance resistor 73 is connected to the second end of the first charging resistor 72.
  • the gate of the first switch SW1 is connected to the second end of the first balance resistor 73.
  • the drive circuit 50 includes a first discharge resistor 74, a first discharge switch 75, a first protection resistor 76, a first protection switch 77, and a first off holding switch 78.
  • N-channel MOSFETs are used as the first discharge switch 75, the first protection switch 77, and the first off-hold switch 78.
  • the drain of the first discharge switch 75 is connected to the first end of the first balance resistor 73 via the first discharge resistor 74.
  • the source of the first switch SW1 is connected to the source of the first discharge switch 75.
  • the drain of the first protection switch 77 is connected to the first end of the first balance resistor 73 via the first protection resistor 76.
  • the source of the first switch SW1 is connected to the source of the first protection switch 77.
  • the drain of the first off holding switch 78 is connected to the gate of the first switch SW1.
  • the source of the first switch SW1 is connected to the source of the first off holding switch 78.
  • the drive circuit 50 includes a second charging switch 80, a second constant voltage power supply 81, a second charging resistor 82, and a second balance resistor 83.
  • a P-channel MOSFET is used as the second charging switch 80.
  • a second constant voltage power supply 81 is connected to the source of the second charging switch 80, and the first end of the second charging resistor 82 is connected to the drain of the second charging switch 80.
  • the first end of the second balance resistor 83 is connected to the second end of the second charging resistor 82.
  • the gate of the second switch SW2 is connected to the second end of the second balance resistor 83.
  • the output voltage of the second constant voltage power supply 81 is set lower than the output voltage of the first constant voltage power supply 71. However, this setting is not mandatory.
  • the drive circuit 50 includes a second discharge resistor 84, a second discharge switch 85, a second protection resistor 86 as a soft cutoff resistor, a second protection switch 87, and a second off holding switch 88.
  • N-channel MOSFETs are used as the second discharge switch 85, the second protection switch 87, and the second off-holding switch 88.
  • the emitter of the second switch SW2 is connected to the first end of the second balance resistor 83 via the second discharge resistor 84 and the second discharge switch 85.
  • the emitter of the second switch SW2 is connected to the first end of the second balance resistor 83 via the second protection resistor 86 and the second protection switch 87.
  • the gate of the second switch SW2 is connected to the emitter of the second switch SW2 via the second off holding switch 88.
  • the first switch SW1 includes a first sense terminal St1.
  • the first sense terminal St1 outputs a minute current having a correlation with the drain current of the first switch SW1.
  • the first end of the first sense resistor 79 of the drive circuit 50 is connected to the first sense terminal St1, and the source of the first switch SW1 is connected to the second end of the first sense resistor 79. ..
  • a voltage drop occurs in the first sense resistor 79 due to the minute current flowing through the first sense terminal St1. Therefore, the voltage drop amount of the first sense resistor 79 can be used as the correlation value of the drain current.
  • the potential difference of the first sense resistor 79 is input to the drive control unit 90 of the drive circuit 50 as the first sense voltage Vse1. In the present embodiment, among both ends of the first sense resistor 79, the first sense voltage Vse1 when the potential of the first end is higher than that of the second end is defined as positive.
  • the second switch SW2 is provided with a second sense terminal St2.
  • the second sense terminal St2 outputs a minute current having a correlation with the collector current of the second switch SW2.
  • the first end of the second sense resistor 89 of the drive circuit 50 is connected to the second sense terminal St2, and the emitter of the second switch SW2 is connected to the second end of the second sense resistor 89. ..
  • the potential difference of the second sense resistor 89 is input to the drive control unit 90 as the second sense voltage Vse2.
  • the second sense voltage Vse2 when the potential of the first end is higher than that of the second end is defined as positive.
  • the drive control unit 90 drives the first and second switches SW1 and SW2 on and off based on the first and second drive signals G1 and G2 output from the cutoff circuit 60. Specifically, when the drive control unit 90 determines that the first drive signal G1 is on command, the drive control unit 90 drives the first charge switch 70 on and drives the first discharge switch 75 off. As a result, a charging current flows from the first constant voltage power supply 71 to the gate of the first switch SW1, and the gate voltage of the first switch SW1 becomes equal to or higher than the first threshold voltage Vth1. As a result, the first switch SW1 is switched from the off state to the on state.
  • the drive control unit 90 determines that the first drive signal G1 is an off command
  • the drive control unit 90 sets the first charge switch 70 to off drive and drives the first discharge switch 75 on.
  • a discharge current flows from the gate of the first switch SW1 to the source, and the gate voltage of the first switch SW1 becomes less than the first threshold voltage Vth1.
  • the first switch SW1 is switched from the on state to the off state.
  • the drive control unit 90 determines that the second drive signal G2 is on command, the drive control unit 90 drives the second charge switch 80 on and drives the second discharge switch 85 off. As a result, a charging current flows from the second constant voltage power supply 81 to the gate of the second switch SW2, and the gate voltage of the second switch SW2 becomes the second threshold voltage Vth2 or more. As a result, the second switch SW2 is switched from the off state to the on state.
  • the drive control unit 90 determines that the second drive signal G2 is an off command
  • the drive control unit 90 sets the second charge switch 80 to off drive and drives the second discharge switch 85 on.
  • a discharge current flows from the gate of the second switch SW2 to the emitter, and the gate voltage of the second switch SW2 becomes less than the second threshold voltage Vth2.
  • the second switch SW2 is switched from the on state to the off state.
  • the drive control unit 90 performs the off holding process. Specifically, the drive controller 90 has a function of detecting the gate voltage of the first and second switches SW1 and SW2. The drive control unit 90 drives the first off holding switch 78 based on the first drive signal G1 output from the cutoff circuit 60 and the detected gate voltage of the first switch SW1, and is output from the cutoff circuit 60. Based on the second drive signal G2 and the detected gate voltage of the second switch SW2, the off-holding process for driving the second off-holding switch 88 is performed.
  • the drive control unit 90 determines that the first drive signal G1 is an off command and the gate voltage of the first switch SW1 is equal to or less than the first specified voltage V ⁇ 1, the first The off-holding switch 78 is driven on, and the first off-holding switch 78 is driven off in other cases.
  • the first specified voltage V ⁇ 1 is set to a voltage equal to or lower than the first threshold voltage Vth1.
  • the second off holding switch 88 is turned on, and in other cases, the second off holding switch 88 is turned off.
  • the second specified voltage V ⁇ 2 is set to a voltage equal to or lower than the second threshold voltage Vth2.
  • the drive control unit 90 includes a first short circuit determination unit 91 and a second short circuit determination unit 92 (corresponding to a “determination unit”).
  • the first and second short circuit determination units 91 and 92 are provided to determine whether or not an overcurrent (short circuit current) is flowing through the first and second switches SW1 and SW2.
  • the first short-circuit determination unit 91 determines that the input first sense voltage Vse1 exceeds the first determination threshold Voc1, it outputs the first fail signal F1 notifying that an overcurrent is flowing to the first switch SW1. Output to the cutoff circuit 60.
  • the first short-circuit determination unit 91 determines that the first sense voltage Vse1 has become equal to or lower than the first release threshold Vjdg1 smaller than the first determination threshold Voc1 after starting to output the first fail signal F1, The output of the fail signal F1 is stopped.
  • the first release threshold Vjdg1 is set to a value slightly larger than 0 or 0.
  • the second short circuit determination unit 92 determines that the input second sense voltage Vse2 exceeds the second determination threshold Voc2, it outputs the second fail signal F2 notifying that the overcurrent is flowing to the second switch SW2. Output to the cutoff circuit 60.
  • the second short circuit determination unit 92 determines that the second sense voltage Vse2 has become equal to or lower than the second release threshold Vjdg2 after starting to output the second fail signal F2, the second short circuit determination unit 92 stops the output of the second fail signal F2.
  • the second release threshold Vjdg2 is set to a value slightly larger than 0 or 0. Note that the overcurrent is caused by upper and lower arm short circuits, interphase short circuits, ground faults, and the like.
  • step S10 it is determined whether at least one of the first fail signal F1 and the second fail signal F2 is input.
  • step S10 When a negative determination is made in step S10, it is determined that an overcurrent does not flow in any of the first and second switches SW1 and SW2, and the process proceeds to step S11.
  • step S11 the drive signal Gc input from the control device 40 is output to the drive control unit 90 as the first and second drive signals G1 and G2. That is, when the drive signal Gc is an on command, the first and second drive signals G1 and G2 of the on command are output, and when the drive signal Gc is an off command, the first and second drive signals G1 and G2 of the off command are output. Is output.
  • step S10 If an affirmative decision is made in step S10, it is decided that an overcurrent is flowing in at least one of the first and second switches SW1, SW2, and the operation proceeds to step S12.
  • step S12 the first drive signal G1 output to the drive controller 90 is turned off regardless of the input drive signal Gc. In this case, when the input first drive signal G1 is switched to the off command while the drive control unit 90 is outputting at least one of the first and second fail signals F1 and F2, the first charge switch 70, the first discharge switch 75 and the first off holding switch 78 are turned off, and the first protection switch 77 is turned on.
  • the resistance value of the first protection switch 77 is Rs1
  • the resistance value of the first balance resistor 73 is Rb1
  • the resistance value of the second protection switch 87 is Rs2
  • the resistance value of the second balance resistor 83 is Rs1.
  • the value is Rb2.
  • "Rs1 + Rb1 ⁇ Rs2 + Rb2" is set. With this setting, the switching speed when the first switch SW1 is switched to the off state is higher than the switching speed when the second switch SW2 is switched to the off state in the process of step S14 described later.
  • step S13 it is determined whether or not the switching of the first switch SW1 to the off state is completed.
  • the first sense voltage Vse1 becomes equal to or less than the first release threshold value Vjdg1 and the input of the first fail signal F1 is stopped, it is determined that the switching is completed.
  • step S13 If an affirmative determination is made in step S13, the process proceeds to step S14, and the second drive signal G2 output to the drive control unit 90 is turned off regardless of the input drive signal Gc.
  • the drive control unit 90 drives the second charge switch 80, the second discharge switch 85, and the second off holding switch 88 off, and drives the second protection switch 87 on.
  • the second switch SW2 is switched to the off state at a switching speed lower than the switching speed when the first switch SW1 is switched to the off state.
  • the cutoff circuit 60 constitutes an overcurrent protection unit.
  • the overcurrent protection operation by the breaking circuit 60 when the upper and lower arm short circuits occur will be described with reference to FIGS. 5 and 6.
  • the upper and lower arm switch portions 20H and 20L one is an opposing arm and the other is an own arm, and an overcurrent protection operation by the cutoff circuit 60 of the own arm will be described.
  • FIG. 5 describes a case where the first and second switches SW1 and SW2 of the own arm are turned on while at least one of the first and second switches SW1 and SW2 of the opposite arm is short-circuited.
  • 5 (a) and 5 (b) show the transition of the first and second drive signals G1 and G2 output from the breaking circuit 60
  • FIG. 5 (c) shows the gate voltage Vgs (gate) of the first switch SW1.
  • 5D shows the transition of the gate voltage Vge (gate-emitter voltage) of the second switch SW2.
  • 5E and 5F show changes in the first and second sense voltages Vse1 and Vse2, and
  • the first and second drive signals G1 and G2 output from the cutoff circuit 60 to the drive control unit 90 are switched to the ON command.
  • the gate voltage Vgs of the first switch SW1 and the gate voltage Vge of the second switch SW2 start to rise.
  • the first sense voltage Vse1 exceeds the first determination threshold value Voc1. Therefore, the first fail signal F1 is output from the first short circuit determination unit 91 to the cutoff circuit 60, and the first drive signal G1 output from the cutoff circuit 60 to the drive control unit 90 is switched to the off command. .. As a result, at time t4, the gate voltage Vgs of the first switch SW1 starts to decrease.
  • the first sense voltage Vse1 becomes equal to or lower than the first release threshold Vjdg1. Therefore, the output of the first fail signal F1 from the first short circuit determination unit 91 to the cutoff circuit 60 is stopped, and the second drive signal G2 output from the cutoff circuit 60 to the drive control unit 90 is switched to the off command. .. As a result, at time t6, the gate voltage Vge of the second switch SW2 starts to decrease.
  • the decreasing speed ⁇ dVmos of the first sense voltage Vse1 when the first switch SW1 is switched to the off state is higher than the decreasing speed ⁇ dVigbt of the second sense voltage Vse2 when the second switch SW2 is switched to the off state. .. That is, the switching speed when the first switch SW1 is switched to the off state is higher than the switching speed when the second switch SW2 is switched to the off state.
  • the time for the overcurrent to flow through the first switch SW1 can be shortened, and the time integral value (energy) of the loss generated in the first switch SW1 can be set to be equal to or less than the short-circuit tolerance of the first switch SW1.
  • FIG. 5 shows an example in which the first switch SW1 is switched to the off state first when it is determined that an overcurrent has flowed through the first switch SW1, but it is determined that an overcurrent has flowed through the second switch SW2. Also, the first switch SW1 is switched to the off state first.
  • FIG. 6 describes a case where at least one of the first and second switches SW1 and SW2 of the opposite arm fails in a short circuit while the first and second switches SW1 and SW2 of the own arm are driven on.
  • FIGS. 6(a) to 6(h) correspond to FIGS. 5(a) to 5(h).
  • the first and second drive signals G1 and G2 output from the cutoff circuit 60 to the drive control unit 90 are switched to the ON command.
  • the gate voltage Vgs of the first switch SW1 and the gate voltage Vge of the second switch SW2 start to rise.
  • the first sense voltage Vse1 exceeds the first determination threshold Voc1. Therefore, the first fail signal F1 is output from the first short circuit determination unit 91 to the cutoff circuit 60, and the first drive signal G1 output from the cutoff circuit 60 to the drive control unit 90 is switched to the off command. .. As a result, at time t4, the gate voltage Vgs of the first switch SW1 starts to decrease.
  • the first sense voltage Vse1 becomes equal to or lower than the first release threshold Vjdg1. Therefore, the output of the first fail signal F1 from the first short circuit determination unit 91 to the cutoff circuit 60 is stopped, and the second drive signal G2 output from the cutoff circuit 60 to the drive control unit 90 is switched to the off command. .. As a result, the gate voltage Vge of the second switch SW2 begins to decrease.
  • FIG. 7 shows a case where the first and second switches SW1 and SW2 of the own arm are turned on while at least one of the first and second switches SW1 and SW2 of the opposing arm is short-circuited.
  • FIGS. 7(a) to 7(h) correspond to the previous FIGS. 5(a) to 5(h).
  • the first and second drive signals G1 and G2 output from the cutoff circuit 60 to the drive control unit 90 are switched to the ON command.
  • the gate voltage Vgs of the first switch SW1 and the gate voltage Vge of the second switch SW2 start to rise.
  • the cutoff circuit 60 when at least one of the first and second fail signals F1 and F2 is input to the cutoff circuit 60, the cutoff circuit 60 simultaneously switches the first and second drive signals G1 and G2 to the off command. Specifically, at time t3, the first sense voltage Vse1 exceeds the first determination threshold value Voc1. Therefore, the first fail signal F1 is output from the first short circuit determination unit 91 to the cutoff circuit 60, and the first and second drive signals G1 and G2 output from the cutoff circuit 60 to the drive control unit 90 are output. Switched to off command. As a result, at time t4, the gate voltage Vgs of the first switch SW1 and the gate voltage Vge of the second switch SW2 start to decrease.
  • FIG. 8 shows a case where the first and second switches SW1 and SW2 of the own arm are turned on while at least one of the first and second switches SW1 and SW2 of the opposing arm is short-circuited.
  • 8 (a) to 8 (f) correspond to the above FIGS. 5 (a) to 5 (f)
  • FIG. 8 (g) shows the transition of the phase current flowing through the winding 31.
  • times t1 to t4 in FIG. 8 correspond to times t1 to t4 in FIG.
  • Comparative Example 2 when at least one of the first and second fail signals F1 and F2 is input to the cutoff circuit 60, the cutoff circuit 60 has the first and second drive signals G1 and G2 as in Comparative Example 1. Are simultaneously switched to the off command. Further, in Comparative Example 2, the switching speed when the second switch SW2 is switched to the off state is set in two ways. In FIGS. 8D and 8G, the case where the switching speed is low is shown by the broken line, and the case where the switching speed is high is shown by the solid line.
  • the first switch SW1 When it is determined that an overcurrent has flowed to at least one of the first and second switches SW1 and SW2, the first switch SW1 having a smaller short-circuit tolerance among the first and second switches SW1 and SW2 is switched from the second switch SW2. Also switched to the off state first. As a result, the time during which the overcurrent flows through the first switch SW1 can be shortened, and the energy generated by the first switch SW1 can be made equal to or less than the short-circuit tolerance of the first switch SW1. As a result, the first switch SW1 can be appropriately protected from overcurrent.
  • the first switch SW1 that can be switched to the off state first does not generate a large surge voltage due to the switching to the off state. Therefore, the switching speed of the first switch SW1 that is not finally turned off can be higher than that of the second switch SW2 that is finally turned off. In view of this point, the switching speed of the first switch SW1 is set higher than the switching speed of the second switch SW2. Thereby, when switching to the off state, the flow time of the overcurrent of the first switch SW1 can be shortened, and the energy generated in the first switch SW1 can be further reduced.
  • the first switch SW1 When it was determined that an overcurrent had flowed to any one of the first and second switches SW1 and SW2, the first switch SW1 was first switched to the off state. As a result, even when it is determined that the overcurrent flows through the second switch SW2, it is possible to quickly shift to the overcurrent protection operation of the first switch SW1.
  • FIG. 9 shows a procedure of processing executed by the break circuit 60.
  • the same processes as those shown in FIG. 4 above are given the same reference numerals for convenience.
  • step S14 is performed before the switching of the first switch SW1 to the off state is completed. Even in this case, it is possible to obtain an effect similar to the effect of the first embodiment.
  • FIG. 10 shows a procedure of processing executed by the break circuit 60.
  • the same processes as those shown in FIG. 4 above are designated by the same reference numerals for convenience.
  • the first protection resistor 76 and the first protection switch 77 are not provided in the configuration of FIG. 3 described above.
  • step S10 the process proceeds to step S15.
  • step S15 the first drive signal G1 output to the drive control unit 90 is turned off regardless of the input drive signal Gc.
  • the drive control unit 90 switches the first charge switch when the input first drive signal G1 is switched to the off command while at least one of the first and second fail signals F1 and F2 is being output. 70, the first discharge switch 75 and the first off holding switch 78 are turned off, and the first off holding switch 78 is turned on.
  • the first switch SW1 is switched to the off state by using the first off holding switch 78. According to this configuration, the switching speed when the first off holding switch 78 is switched to the off state can be further increased, and the energy generated by the first switch SW1 can be further reduced.
  • the first off holding switch 78 can be diverted as the switch used in the overcurrent protection operation, and it is not necessary to provide the first protection resistor 76 and the first protection switch 77 in the drive circuit 50. Therefore, the number of parts of the drive circuit 50 can be reduced.
  • the number of switches composing the switch section of each arm of each phase may be three or more.
  • the first switch, the second switch, and the third switch are arranged in order of increasing short circuit withstand capability.
  • the first switch among the first to third switches is first switched to the off state, and then the second switch is turned off. It suffices if it is switched to and finally the third switch is switched to the off state.
  • the switches that make up the switch section of each arm of each phase are not limited to the same type of switch.
  • the first and second switches are MOSFETs configured of SiC devices, the short circuit capacitance may differ due to the difference in chip size. Even in such cases, the application of the present disclosure is valid.
  • the drive control unit 90 may have the function of the cutoff circuit 60 without providing the cutoff circuit 60 in the control system.
  • the power conversion circuit is not limited to an inverter, and may be, for example, a full bridge circuit as long as it has upper and lower arm switches.
  • control unit and its method described in the present disclosure are realized by a dedicated computer provided by configuring a processor and a memory programmed to execute one or more functions embodied by a computer program. May be done.
  • control unit and the method described in the present disclosure may be realized by a dedicated computer provided by configuring a processor with one or more dedicated hardware logic circuits.
  • control unit and the method thereof described in the present disclosure are based on a combination of a processor and a memory programmed to execute one or a plurality of functions and a processor configured by one or more hardware logic circuits. It may be realized by one or more dedicated computers configured.
  • the computer program may be stored in a computer-readable non-transitional tangible recording medium as an instruction executed by the computer.

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Power Conversion In General (AREA)
  • Inverter Devices (AREA)
  • Electronic Switches (AREA)
PCT/JP2020/008108 2019-03-01 2020-02-27 スイッチの駆動装置 WO2020179633A1 (ja)

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WO2022230833A1 (ja) * 2021-04-26 2022-11-03 株式会社Flosfia 電力変換回路、電力変換装置および制御システム
JP2022183861A (ja) 2021-05-31 2022-12-13 三菱電機株式会社 パワー半導体装置

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JP2016220101A (ja) * 2015-05-22 2016-12-22 株式会社デンソー パワートランジスタ駆動装置
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