WO2020134007A1 - 显示面板、电子设备及显示面板的制作方法 - Google Patents

显示面板、电子设备及显示面板的制作方法 Download PDF

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Publication number
WO2020134007A1
WO2020134007A1 PCT/CN2019/094466 CN2019094466W WO2020134007A1 WO 2020134007 A1 WO2020134007 A1 WO 2020134007A1 CN 2019094466 W CN2019094466 W CN 2019094466W WO 2020134007 A1 WO2020134007 A1 WO 2020134007A1
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Prior art keywords
light
layer
display panel
transmitting
pixel definition
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PCT/CN2019/094466
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English (en)
French (fr)
Inventor
高洪
金武谦
赵勇
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武汉华星光电半导体显示技术有限公司
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Application filed by 武汉华星光电半导体显示技术有限公司 filed Critical 武汉华星光电半导体显示技术有限公司
Priority to US16/613,318 priority Critical patent/US11411204B2/en
Publication of WO2020134007A1 publication Critical patent/WO2020134007A1/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/60—OLEDs integrated with inorganic light-sensitive elements, e.g. with inorganic solar cells or inorganic photodiodes
    • H10K59/65—OLEDs integrated with inorganic image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H10K50/852—Arrangements for extracting light from the devices comprising a resonant cavity structure, e.g. Bragg reflector pair
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/875—Arrangements for extracting light from the devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/875—Arrangements for extracting light from the devices
    • H10K59/876—Arrangements for extracting light from the devices comprising a resonant cavity structure, e.g. Bragg reflector pair

Definitions

  • the present application relates to the field of electronic displays, and in particular, to a display panel, an electronic device, and a method of manufacturing the display panel.
  • the under-screen camera technology is a new technology proposed to break through the limit of the screen ratio of the existing display screen. Its principle is to integrate the camera in the display area of the display device, so that the area can realize the functions of display and camera at the same time. In order to achieve a real comprehensive screen.
  • the under-screen camera Since the under-screen camera is hidden inside the display panel, the light entering the camera is inevitably blocked and absorbed by materials such as the encapsulation layer and electrode layer of the display panel, which increases the imaging difficulty. Therefore, the light-transmitting area needs to be processed to improve the light transmittance of the area to improve the imaging level.
  • the present application provides a display panel, an electronic device, and a method for manufacturing the display panel, to solve the problem of improving the light transmittance of the light-transmitting area of the display panel.
  • the present application provides a display panel.
  • the display panel has a laminated structure including a substrate, a thin film transistor layer above the substrate, a pixel definition layer above the thin film transistor layer, and a The light-emitting structure above the pixel definition layer;
  • the light-emitting structure includes a plurality of light-transmitting regions and light-emitting regions arranged at intervals, wherein the plurality of light-transmitting regions are used to correspond to the light sensor; wherein,
  • the light emitting structure includes a first light extraction layer located in the light transmitting area.
  • the light emitting structure includes a cathode provided with a perforation located in the light-transmitting region; wherein the first light extraction layer corresponds to the perforation.
  • the light-emitting structure includes a cathode, at least a portion of the cathode is located in the light-transmitting region, wherein the first light extraction layer is located on a side of the cathode near the substrate.
  • the light emitting structure further includes a second light extraction layer located in the light-transmitting region, wherein the second light extraction layer is located on a side of the cathode away from the substrate.
  • the thin-film transistor layer includes a plurality of light-transmitting units corresponding to the plurality of light-transmitting regions, and a projection area of the first light extraction layer on a horizontal plane is greater than or equal to the thin-film transistor The projected area of the light transmitting unit in the layer on the horizontal plane.
  • the material forming the first light extraction layer is an inorganic substance or a small organic molecule.
  • the material forming the second light extraction layer is an inorganic substance or a small organic molecule.
  • auxiliary light-emitting layer between the pixel definition layer and the first light extraction layer of the light-transmitting area, the auxiliary light-emitting layer is assisted by the light-emitting area adjacent to the light-transmitting area The extended composition of the light emitting layer.
  • the cathode is located in the light-transmitting region and the light-emitting region.
  • the present application also provides an electronic device including a display panel and a light sensor.
  • the display panel is a laminated structure including a substrate, a thin film transistor layer above the substrate, and a thin film transistor layer above the thin film transistor layer A pixel definition layer and a light emitting structure located above the pixel definition layer;
  • the light-emitting structure includes a plurality of light-transmitting regions and light-emitting regions arranged at intervals, wherein the plurality of light-transmitting regions are used to correspond to the light sensor; wherein,
  • the light emitting structure includes a first light extraction layer located in the light transmitting area.
  • the photosensor is located on a side of the substrate away from the thin film transistor layer, and the photosensor is a camera.
  • the method includes the following steps:
  • the pixel definition layer Forming a pixel definition layer above the thin film transistor layer, the pixel definition layer having a through hole;
  • a first light extraction layer is formed on top of the pixel definition layer.
  • the method of forming the first light extraction layer above the top of the pixel definition layer further includes:
  • a method of forming a first light extraction layer above the top of the pixel definition layer includes:
  • a light-transmitting protective material is deposited in the perforation to form a first light extraction layer.
  • a method of forming a first light extraction layer on top of the pixel definition layer includes:
  • the light-transmitting protective material located on the side walls of the anode and the pixel definition layer is removed, and the light-transmitting material located on the top of the pixel definition layer is left to form a first light extraction layer.
  • the present application also provides a first light extraction layer in the light-transmitting region.
  • the first light extraction layer is made of inorganic substances or small organic molecules, which can change the optical structure of the device and adjust its microcavity effect, thereby Improve the light output efficiency of the light transmission area.
  • FIG. 1 is a partial structural schematic diagram of a display panel integrated with a camera in the prior art of the present application
  • FIGS. 2 and 3 are schematic structural diagrams of a display panel integrated with a camera in the first embodiment of the present application;
  • FIGS. 4 and 5 are schematic structural diagrams of a display panel integrated with a camera in a second embodiment of the present application.
  • 6 to 8 are schematic structural diagrams of a display panel integrated with a camera in a third embodiment of the present application.
  • FIG. 1 is a schematic diagram of a partial structure of a display panel integrated with a camera in the prior art of the present application.
  • the display panel includes a substrate and a thin film transistor layer located above the substrate 3.
  • the pixel definition layer has a through hole penetrating the pixel definition layer.
  • An optical sensor array 30 is integrated in the thin film transistor layer.
  • the light emitting structure includes an anode 110 at the bottom of the through hole, a light emitting layer 104 covering the pixel definition layer 102 and the anode 110, a cathode 106 covering the light emitting layer 104, and a third covering the cathode 106 Two light extraction layer 108.
  • the anode and the stacked structure above the anode constitute the light-emitting area 10 of the display panel
  • the pixel defined layer 102 and the pixel defined layer 102 and the stacked structure above constitute the transparent structure of the display panel ⁇ 20 ⁇ The light area 20.
  • the pixel definition layer 102 and the stacked structure above the pixel definition layer 102 are both light-transmitting materials, since light enters the display panel from the light-transmitting area inevitably, The laminated structure absorbs the light transmittance of the display panel.
  • the present application provides a display panel and a manufacturing method thereof to solve the problem of improving the light transmittance of the light-transmitting area of the display panel.
  • the display panel is an OLED display panel.
  • the OLED display panel has the advantages of light and thin, fast response, wide viewing angle, high contrast, and bendability. It is the best choice as an integrated under-screen camera or under-screen fingerprint recognition unit.
  • the present application provides a display panel, wherein the display panel has a laminated structure, including a substrate (not shown in the figure), a thin film transistor layer (not shown in the figure) above the substrate, and a thin film A pixel-defining layer above the transistor layer and a light-emitting structure located above the pixel-defining layer; the light-emitting structure includes a plurality of light-transmitting regions and light-emitting regions arranged at intervals, wherein the plurality of light-transmitting regions 20 are used for corresponding light Sensor; wherein, the light-emitting structure includes a first light extraction layer located in the light-transmitting region.
  • the material of the first light extraction layer is an inorganic substance or a small organic molecule.
  • Inorganic substances or small organic molecules can change the optical structure of the device and adjust its microcavity effect, thereby improving the light output efficiency of the light-transmitting area.
  • the inorganic substance may be zinc selenide (ZnSe), and the small organic molecule may be n-bromopropane (NPB) or other aromatic amine organic substances.
  • the light-emitting structure includes a cathode, and the cathode is provided with a perforation located in the light-transmitting region; wherein, the first light extraction layer corresponds to the perforation.
  • the cathode is located in the light-transmitting region, wherein the first light extraction layer is located on a side of the cathode near the substrate.
  • the light emitting structure further includes a second light extraction layer located in the light-transmitting area, wherein the second light extraction layer is located on a side of the cathode away from the substrate.
  • the thin-film transistor layer includes a plurality of light-transmitting units corresponding to the plurality of light-transmitting regions, and a projected area of the first light extraction layer in the horizontal plane is greater than or equal to that of the light-transmitting unit in the thin-film transistor layer in the horizontal plane shadow area.
  • FIG. 3 is a schematic structural diagram of a display panel integrated with a camera in an embodiment of the present application.
  • the display panel includes a thin film transistor layer, and the thin film transistor layer includes a spacer Multiple thin-film transistor units and multiple light-transmitting units.
  • the light-emitting structure includes a plurality of light-transmitting regions 20 and a plurality of light-emitting regions 10 arranged at intervals, and the light-transmitting regions are located above the light-transmitting unit.
  • the light emitting structure includes an anode 110 at the bottom of the through hole, a light emitting layer 104 covering the pixel definition layer 102 and the anode 110, and a cathode 106 covering the light emitting layer 104 And a second light extraction layer 108 covering the cathode 106.
  • the anode and the laminated structure above the anode constitute the light-emitting area 10 of the display panel
  • the pixel definition layer 102 and the pixel definition layer 102 and the above laminated structure constitute the transparent of the display panel ⁇ 20.
  • the light-transmitting region 20 includes a pixel definition layer 102 above the light-transmitting unit And a first light extraction layer 109 located above the pixel definition layer 102.
  • the material forming the first light extraction layer is an inorganic substance or a small organic molecule.
  • Inorganic substances or small organic molecules can change the excited state of the light-transmitting material in the light-transmitting region, thereby further improving the light-transmitting property of the light-transmitting region.
  • the present application can greatly prevent light from being absorbed when entering the display panel, thereby effectively improving the light transmittance of the display panel.
  • the projected area of the first light extraction layer 109 on the horizontal plane is greater than or equal to that in the thin film transistor layer The projected area of the light transmission unit on the horizontal plane.
  • the auxiliary light-emitting layer 104 is composed of the extension of the auxiliary light-emitting layer 104 in the light-emitting region 10 adjacent to the light-transmitting region 20.
  • a light emitting structure in an OLED display panel includes a light emitting layer between a cathode and an anode, and the light emitting layer includes an auxiliary light emitting laminate layer and a light emitting material layer located in the middle of the auxiliary light emitting laminate layer.
  • the luminescent material layer is only provided at the bottom of the through hole in the pixel definition layer to cover the anode to achieve a luminous effect.
  • the auxiliary light-emitting laminated layer covers the entire pixel definition layer.
  • Retaining the auxiliary light-emitting layer can reduce the depth of the through hole that needs to be etched, as shown in FIG. 4, while simplifying the composition of the material that needs to be etched, thereby simplifying the process flow and saving costs while improving luminous efficiency.
  • FIG. 8 there is an electrode layer 106 between the light-emitting layer of the light-transmitting region 20 and the first light extraction layer 109, and the electrode layer 106 is formed by The extension structure of the electrode layer 106 in the light-emitting region 10 adjacent to the light-transmitting region 20 is described.
  • Retaining the light-emitting layer 104 and the electrode layer 106 in the light-transmitting region 20 can save the process steps of removing the light-emitting layer 104 and the electrode layer 106 by photolithography, thereby saving costs.
  • the removal of the light-emitting layer 104 and the electrode layer 106 can further optimize the light transmittance of the display panel. In practice, the appropriate structure can be selected through the demand for light transmittance.
  • the electrode layer of the light-transmitting region 20 further includes a second light extraction layer 108, and the second light extraction layer 108 is composed of the The extension of the second light extraction layer 108 in the light emitting area 10 adjacent to the light transmitting area 20 is constituted.
  • the material of the second light extraction layer 108 is the same as that of the first light extraction layer 109, and is an inorganic substance or a small organic molecule.
  • the inorganic substance may be zinc selenide (ZnSe), and the small organic molecule may be n-bromopropane (NPB) or other aromatic amine organic substances.
  • the provision of the second light extraction layer 108 can not only further increase the light transmittance of the light-transmitting area of the display panel, but also increase the light transmittance of the light-emitting area and obtain a better display effect.
  • the present application also provides an electronic device.
  • the electronic device includes the display panel as described above, and a light sensor is provided below the light-transmitting area of the display panel.
  • the light sensor may be a pattern recognition device, a pattern acquisition device, or a distance detection device, such as a camera, a fingerprint recognition unit, or the like.
  • FIGS. 6 to 8 are schematic structural views of a camera-integrated display panel in the first embodiment of the present application. Among them, the method includes the following steps:
  • a substrate is provided; a thin-film transistor layer is formed above the substrate, the thin-film transistor layer includes a thin-film transistor unit and a light-transmitting unit, and an optical sensor array 30 is integrated in the thin-film transistor layer; then To form a pixel definition layer 102 above the thin film transistor layer, the pixel definition layer 102 has a through hole exposing the thin film transistor unit; then, an anode 110 at the bottom of the through hole is formed to cover the The pixel definition layer 102 and the light emitting layer 104 of the anode 110.
  • a first light extraction layer 112 covering the light-emitting layer 104 is formed, and the first light extraction layer 112 is patterned so as to cover only the light-emitting layer 104 on top of the pixel definition layer 102 .
  • the method of forming the first light extraction layer 112 on top of the pixel definition layer 102 includes: depositing a light-transmitting protective material on the surface of the cathode 104; removing the side located on the anode 110 and the pixel definition layer 102 The light-transmitting protective material of the wall retains the light-transmitting material on the top of the pixel definition layer 102 to form the first light extraction layer 112.
  • a cathode 106 covering the light emitting layer 104 and the first light extraction layer 112 and a second light extraction layer 108 covering the cathode 106 are formed.
  • the first light extraction layer 112 is located between the cathode 106 and the second light extraction layer 108, that is, the first light extraction layer 112 is formed after the cathode 106 is formed Light extraction layer 102.
  • the location of the first light extraction layer 102 cannot be interpreted as a limitation of the present application, and those skilled in the art can select the location of the first light extraction layer 102 as needed.
  • FIG. 2 and FIG. 3 are schematic structural diagrams of a display panel integrated with a camera in another embodiment of the present application.
  • the method of forming the first light extraction layer 112 above includes:
  • a perforation is formed in the area above the top of the pixel definition layer 102, and the depth of the perforation is less than or equal to the sum of the thicknesses of the light-emitting layer 104 and the cathode 106;
  • the cathode 106 and the light emitting layer 104 expose the top of the pixel definition layer 102, as shown in FIG.
  • a light-transmitting protective material is deposited in the perforation to form the first light extraction layer 112, as shown in FIG. 3.
  • FIGS. 4 and 5 are schematic structural diagrams of a display panel integrated with a camera in still another embodiment of the present application.
  • the method of forming the first light extraction layer 112 above includes:
  • a perforation is formed in the area above the top of the pixel definition layer 102, and the depth of the perforation is less than or equal to the thickness of the light emitting layer 104; that is, the cathode 106 above the pixel definition layer 102 is removed to expose the The top of the light emitting layer 104 is shown in FIG. 4. After that, a light-transmitting protective material is deposited in the through hole to form a first light extraction layer 112, as shown in FIG. 5.
  • Retaining the light-emitting layer 104 and the electrode layer 106 in the light-transmitting region 20 can save the process steps of removing the light-emitting layer 104 and the electrode layer 106 by photolithography, thereby saving costs.
  • the removal of the light-emitting layer 104 and the electrode layer 106 can further optimize the light transmittance of the display panel. In practice, the appropriate structure can be selected through the demand for light transmittance.
  • the present application also provides a first light extraction layer in the light-transmitting region.
  • the first light extraction layer is made of inorganic substances or small organic molecules, which can change the optical structure of the device and adjust its microcavity effect, thereby The light output efficiency of the light-transmitting area is improved to further improve the light transmittance of the light-transmitting area.

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Abstract

一种显示面板、电子设备及显示面板的制作方法，所述显示面板为叠层结构，包括基板、位于所述基板上方的薄膜晶体管层、位于所述薄膜晶体管层上方的像素定义层（102）和位于所述像素定义层（102）上方的发光结构。所述发光结构包括间隔设置的多个透光区（20）和发光区（10）。其中，多个所述透光区（20）用于对应光传感器（30）；其中，所述发光结构包括位于所述透光区（20）的第一光提取层（109），从而能够提高显示面板的透光率。

Description

显示面板、电子设备及显示面板的制作方法 技术领域
本申请涉及电子显示领域，尤其涉及一种显示面板、电子设备及显示面板的制作方法。
 背景技术
屏下摄像头技术是为了突破现有显示屏的屏占比极限而提出的一种新技术，其原理是将摄像头集成在显示设备的显示区中，使该区域能够同时实现显示和摄像的功能，从而实现真正意义上的全面屏。
 技术问题
由于屏下摄像头隐藏在显示面板内部，进入摄像头的光线不可避免的会被显示面板的封装层、电极层等材料阻挡和吸收，增大了成像难度。因此需要对透光区域进行处理，提高该区域光线的透过率，以提高成像水平。
 技术解决方案
本申请提供一种显示面板、电子设备及显示面板的制作方法，以解决提高显示面板的透光区域的透光率。
为解决上述问题，本申请提供了一种显示面板，所述显示面板为叠层结构，包括基板、位于所述基板上方的薄膜晶体管层、位于所述薄膜晶体管层上方的像素定义层和位于所述像素定义层上方的发光结构；
所述发光结构包括间隔设置的多个透光区和发光区，其中，多个所述透光区用于对应光传感器；其中，
所述发光结构包括位于所述透光区的第一光提取层。
根据本申请的其中一个方面，所述发光结构包括阴极，所述阴极上设有位于所述透光区的穿孔；其中，所述第一光提取层对应于所述穿孔。
根据本申请的其中一个方面，所述发光结构包括阴极，所述阴极的至少一部分位于所述透光区，其中，所述第一光提取层位于所述阴极的靠近所述基板的一侧。
根据本申请的其中一个方面，所述发光结构还包括位于所述透光区的第二光提取层，其中，所述第二光提取层位于所述阴极的远离所述基板的一侧。
根据本申请的其中一个方面，所述薄膜晶体管层包括对应于多个所述透光区的多个透光单元，所述第一光提取层在水平面上的投影面积大于或等于所述薄膜晶体管层中的透光单元在水平面上的投影面积。
根据本申请的其中一个方面，形成所述第一光提取层的材料为无机物或有机小分子。
根据本申请的其中一个方面，形成所述第二光提取层的材料为无机物或有机小分子。
根据本申请的其中一个方面，所述透光区的像素定义层和第一光提取层之间具有辅助发光层，所述辅助发光层由与所述透光区相邻的发光区中的辅助发光层的延伸构成。
根据本申请的其中一个方面，所述阴极位于所述透光区和所述发光区。
本申请还提供了一种电子设备，所述电子设备包括显示面板和光传感器，所述显示面板为叠层结构，包括基板、位于所述基板上方的薄膜晶体管层、位于所述薄膜晶体管层上方的像素定义层和位于所述像素定义层上方的发光结构；
所述发光结构包括间隔设置的多个透光区和发光区，其中，多个所述透光区用于对应光传感器；其中，
所述发光结构包括位于所述透光区的第一光提取层。
根据本申请的其中一个方面，所述光传感器位于所述基板的远离所述薄膜晶体管层的一侧，所述光传感器为摄像头。
根据本申请的其中一个方面，该方法包括以下步骤：
提供基板；
形成位于所述基板上方的薄膜晶体管层；
形成位于所述薄膜晶体管层上方的像素定义层，所述像素定义层具有通孔；
形成位于所述通孔底部的阳极；
形成覆盖所述像素定义层和所述阳极的发光层；
形成覆盖所述发光层的阴极；
在所述像素定义层顶部上方形成第一光提取层。
根据本申请的其中一个方面，在所述像素定义层顶部上方形成第一光提取层的方法还包括：
形成覆盖所述第一光提取层和所述阴极的第二光提取层；
覆盖所述阴极的第二光提取层。
根据本申请的其中一个方面，在所述像素定义层顶部上方形成第一光提取层的方法包括：
在所述像素定义层顶部上方的区域中形成穿孔，所述穿孔的深度小于或等于所述发光层和所述阴极层的厚度之和；
在所述穿孔中淀积透光保护材料，形成第一光提取层。
根据本申请的其中一个方面，在所述像素定义层顶部上方形成第一光提取层的方法包括；
在所述阴极表面淀积透光保护材料；
去除位于所述阳极和所述像素定义层侧壁的透光保护材料，保留位于所述像素定义层顶部的透光材料，形成第一光提取层。
 有益效果
本申请通过去除位于所述显示面板中的发光结构中的透光区域中的电极层和发光层，从而避免了进入显示面板的光线被电极层和发光层吸收，避免了光线损失，提高了显示面板的透光率。此外，本申请还在所述透光区域中设置了第一光提取层，所述第一光提取层采用无机物或有机小分子制成，能够改变器件光学结构，调节其微腔效应，从而提高投透光区的出光效率。
 附图说明
图1为本申请现有技术中的集成有摄像头的显示面板的局部结构示意图；
图2和图3为本申请的第一个实施例中的集成有摄像头的显示面板的结构示意图；
图4和图5为本申请的第二个实施例中的集成有摄像头的显示面板的结构示意图；
图6至图8为本申请的第三个实施例中的集成有摄像头的显示面板的结构示意图。
本申请的实施方式
以下各实施例的说明是参考附加的图示，用以例示本申请可用以实施的特定实施例。本申请所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本申请，而非用以限制本申请。在图中，结构相似的单元是用以相同标号表示。
首先对现有技术进行简要说明，参见图1，图1为本申请现有技术中的集成有摄像头的显示面板的局部结构示意图，所述显示面板包括基板、位于所述基板上方的薄膜晶体管层、位于薄膜晶体管层上方的像素定义层102和位于所述像素定义层102上方的发光结构。
所述像素定义层具有贯穿所述像素定义层的通孔。所述薄膜晶体管层中集成有光传感器阵列30。所述发光结构包括位于所述通孔底部的阳极110、覆盖所述像素定义层102和所述阳极110的发光层104，覆盖所述发光层104的阴极106、以及覆盖所述阴极106的第二光提取层108。其中，所述阳极和所述阳极上方的叠层结构构成所述显示面板的发光区域10，所述像素定义层102和所述像素定义层102和上方的叠层结构构成所述显示面板的透光区域20。
现有技术中，虽然所述像素定义层102和所述像素定义层102上方的叠层结构均为透光材料，但由于光线从所述透光区域进入所述显示面板时不可避免的会被所述叠层结构吸收，显示面板的透光率。
因此，本申请提供一种显示面板及其制作方法，以解决提高显示面板的透光区域的透光率。
优选的，所述显示面板为OLED显示面板。OLED显示面板具有轻薄、响应快、广视角、高对比度、可弯折等优点，是作为集成屏下摄像头或屏下指纹识别单元的最优选择。
本申请提供了一种显示面板，其在，所述显示面板为叠层结构，包括基板（图中未示出）、位于所述基板上方的薄膜晶体管层（图中未示出）、位于薄膜晶体管层上方的像素定义层和位于所述像素定义层上方的发光结构；所述发光结构包括间隔设置的多个透光区和发光区，其中，多个所述透光区20用于对应光传感器；其中，所述发光结构包括位于所述透光区的第一光提取层。
所述第一光提取层的材料为无机物或有机小分子。无机物或有机小分子能够改变器件光学结构，调节其微腔效应，从而提高投透光区的出光效率。所述无机物可以是硒化锌（ZnSe），所述有机小分子可以是正溴丙烷( NPB )或其他芳香胺类有机物。
其中，所述发光结构包括阴极，所述阴极上设有位于所述透光区的穿孔；其中，所述第一光提取层对应于所述穿孔。在其他实施例中，所述阴极的至少一部分位于所述透光区，其中，所述第一光提取层位于所述阴极的靠近所述基板的一侧。
其中，所述发光结构还包括位于所述透光区的第二光提取层，其中，所述第二光提取层位于所述阴极的远离所述基板的一侧。所述薄膜晶体管层包括对应于多个所述透光区的多个透光单元，所述第一光提取层在水平面的投影面积大于或等于所述薄膜晶体管层中的透光单元在水平面的投影面积。
下面将结合附图对本申请进行详细说明。
具体的，参见图3，图3为本申请的一个实施例中的集成有摄像头的显示面板的结构示意图，本实施例中，所述显示面板包括薄膜晶体管层，所述薄膜晶体管层包括间隔设置的多个薄膜晶体管单元和多个透光单元。相应的，所述发光结构包括间隔设置的多个透光区20和多个发光区10，所述透光区位于所述透光单元上方。
具体的，在本实施例中，所述发光结构包括位于所述通孔底部的阳极110、覆盖所述像素定义层102和所述阳极110的发光层104，覆盖所述发光层104的阴极106、以及覆盖所述阴极106的第二光提取层108。其中，所述阳极和所述阳极上方的叠层结构构成所述显示面板的发光区10，所述像素定义层102和所述像素定义层102和上方的叠层结构构成所述显示面板的透光区20。
在本实施例中，由于去除了位于所述透光区20上方的发光层104和阴极106，如图2所示，所述透光区20包括位于所述透光单元上方的像素定义层102，以及位于所述像素定义层102上方的第一光提取层109。
本实施例中，形成所述第一光提取层的材料为无机物或有机小分子。无机物或有机小分子能够改变所述透光区域的透光材料的激发态，从而进一步提高所述透光区域的透光性。同时，由于去除了位于所述透光区20上方的发光层104和阴极106，本申请能够极大的避免光线在进入显示面板时被吸收，从而有效的提高了显示面板的透光率。
优选的，在本实施例中，为了确保所述第一光提取层109覆盖所述透光区20，所述第一光提取层109在水平面上的投影面积大于或等于所述薄膜晶体管层中的透光单元在水平面上的投影面积。
优选的，在本申请的另一个实施例中，如图5所示，所述透光区的像素定义层102和第一光提取层119之间具有辅助发光层104，所述辅助发光层104由与所述透光区20相邻的发光区10中的辅助发光层104的延伸构成。
通常，OLED显示面板中的发光结构包括位于阴极和阳极之间发光层，所述发光层包括辅助发光层叠层和位于所述辅助发光层叠层中间的发光材料层。为了节省成本，所述发光材料层仅仅设置在像素定义层中的通孔底部，覆盖所述阳极，实现发光效果。所述辅助发光层叠层则覆盖所述像素定义层整体。在本申请中，位于所述透光区的像素定义层102和第一光提取层119之间具有辅助发光层叠层，而不包含发光材料层。
保留辅助发光层可以减小需要刻蚀的通孔的深度，如图4所示，同时简化需要被刻蚀的材料的组分，进而简化工艺流程，在提高发光效率的同时节约成本。
优选的，在本申请的另一个实施例中，如图8所示，所述透光区20的发光层和第一光提取层109之间具有电极层106，所述电极层106由与所述透光区20相邻的发光区10中的电极层106的延伸构成。
保留所述透光区20中的发光层104和电极层106，能够节约通过光刻去除所述发光层104和电极层106的工艺步骤，从而能够节约成本。而去除所述发光层104和电极层106则能够进一步优化显示面板的透光率。在实际中，可通过对透光率的需求选择合适的结构。
优选的，在本申请的另一个实施例中，如图8所示，所述透光区20的电极层上方还包括第二光提取层108，所述第二光提取层108由与所述透光区20相邻的发光区10中的第二光提取层108的延伸构成。所述第二光提取层108的材料与所述第一光提取层109相同，为无机物或有机小分子。所述无机物可以是硒化锌（ZnSe），所述有机小分子可以是正溴丙烷( NPB )或其他芳香胺类有机物。
设置所述第二光提取层108不仅能够进一步提高所述显示面板透光区的透光率，同时能够提高发光区的透光率，获得更好的显示效果。
本申请还提供了一种电子设备，所述电子设备包括如前所述的显示面板，所述显示面板的透光区下方设置有光传感器。所述光传感器可以是图形识别装置、图形获取装置或距离探测装置，例如摄像头、指纹识别单元等。
相应的，本申请还提供了一种显示面板的制作方法，参见图6至图8，图6至图8为本申请的第一个实施例中的集成有摄像头的显示面板的结构示意图。其中，该方法包括以下步骤：
首先，如图6所示，提供基板；形成位于所述基板上方的薄膜晶体管层，所述薄膜晶体管层包括薄膜晶体管单元和透光单元，所述薄膜晶体管层中集成有光传感器阵列30；之后，形成位于所述薄膜晶体管层上方的像素定义层102，所述像素定义层102具有暴露出所述薄膜晶体管单元的通孔；之后，形成位于所述通孔底部的阳极110，形成覆盖所述像素定义层102和所述阳极110的发光层104。
之后，如图7所示，形成覆盖所述发光层104的第一光提取层112，并将第一光提取层112图形化，使其仅覆盖位于所述像素定义层102顶部的发光层104。具体的，在所述像素定义层102顶部上方形成第一光提取层112的方法包括；在所述阴极104表面淀积透光保护材料；去除位于所述阳极110和所述像素定义层102侧壁的透光保护材料，保留位于所述像素定义层102顶部的透光材料，形成第一光提取层112。
之后，参见图8，形成覆盖所述发光层104和第一光提取层112的阴极106，以及覆盖所述阴极106的第二光提取层108。
当然，在本申请的另一个实施例中，所述第一光提取层112位于所述阴极106和所述第二光提取层108之间，即在形成所述阴极106之后形成所述第一光提取层102。第一光提取层102所在的位置不能解释为对本申请的限制，本领域的技术人员可以根据需要选择第一光提取层102所在的位置。
参见图2和图3，图2和图3为本申请的另一个实施例中的集成有摄像头的显示面板的结构示意图，在本申请的另一个实施例中，在所述像素定义层102顶部上方形成第一光提取层112的方法包括；
在所述像素定义层102顶部上方的区域中形成穿孔，所述穿孔的深度小于或等于所述发光层104和所述阴极106的厚度之和；即，去除位于所述像素定义层102上方的阴极106和发光层104，暴露出所述像素定义层102的顶部，如图2所示。之后，在所述穿孔中淀积透光保护材料，形成第一光提取层112，如图3所示。
参见图4和图5，图4和图5为本申请的又一个实施例中的集成有摄像头的显示面板的结构示意图，在本申请的另一个实施例中，在所述像素定义层102顶部上方形成第一光提取层112的方法包括；
在所述像素定义层102顶部上方的区域中形成穿孔，所述穿孔的深度小于或等于所述发光层104的厚度；即，去除位于所述像素定义层102上方的阴极106，暴露出所述发光层104的顶部，如图4所示。之后，在所述穿孔中淀积透光保护材料，形成第一光提取层112，如图5所示。
保留所述透光区20中的发光层104和电极层106，能够节约通过光刻去除所述发光层104和电极层106的工艺步骤，从而能够节约成本。而去除所述发光层104和电极层106则能够进一步优化显示面板的透光率。在实际中，可通过对透光率的需求选择合适的结构。
本申请通过去除位于所述显示面板中的发光结构中的透光区域中的电极层和发光层，从而避免了进入显示面板的光线被电极层和发光层吸收，避免了光线损失，提高了显示面板的透光率。此外，本申请还在所述透光区域中设置了第一光提取层，所述第一光提取层采用无机物或有机小分子制成，能够改变器件光学结构，调节其微腔效应，从而提高投透光区的出光效率从而进一步提高所述透光区域的透光性。
综上所述，虽然本申请已以优选实施例揭露如上，但上述优选实施例并非用以限制本申请，本领域的普通技术人员，在不脱离本申请的精神和范围内，均可作各种更动与润饰，因此本申请的保护范围以权利要求界定的范围为准。

Claims (15)

  1. 一种显示面板，其中，所述显示面板为叠层结构，包括基板、位于所述基板上方的薄膜晶体管层、位于所述薄膜晶体管层上方的像素定义层和位于所述像素定义层上方的发光结构；
    所述发光结构包括间隔设置的多个透光区和发光区，其中，多个所述透光区用于对应光传感器；其中，
    所述发光结构包括位于所述透光区的第一光提取层。
  2. 根据权利要求1所述的显示面板，其中，所述发光结构包括阴极，所述阴极上设有位于所述透光区的穿孔；其中，所述第一光提取层对应于所述穿孔。
  3. 根据权利要求1所述的显示面板，其中，所述发光结构包括阴极，所述阴极的至少一部分位于所述透光区，其中，所述第一光提取层位于所述阴极的靠近所述基板的一侧。
  4. 根据权利要求3所述的显示面板，其中，所述发光结构还包括位于所述透光区的第二光提取层，其中，所述第二光提取层位于所述阴极的远离所述基板的一侧。
  5. 根据权利要求1所述的显示面板，其中，所述薄膜晶体管层包括对应于多个所述透光区的多个透光单元，所述第一光提取层在水平面上的投影面积大于或等于所述薄膜晶体管层中的透光单元在水平面上的投影面积。
  6. 根据权利要求1所述的显示面板，其中，形成所述第一光提取层的材料为无机物或有机小分子。
  7. 根据权利要求4所述的显示面板，其中，形成所述第二光提取层的材料为无机物或有机小分子。
  8. 根据权利要求1所述的显示面板，其中，所述透光区的像素定义层和第一光提取层之间具有辅助发光层，所述辅助发光层由与所述透光区相邻的发光区中的辅助发光层的延伸构成。
  9. 根据权利要求3所述的显示面板，其中，所述阴极位于所述透光区和所述发光区。
  10. 一种电子设备，其中，所述电子设备包括显示面板和光传感器，所述显示面板为叠层结构，包括基板、位于所述基板上方的薄膜晶体管层、位于所述薄膜晶体管层上方的像素定义层和位于所述像素定义层上方的发光结构；
    所述发光结构包括间隔设置的多个透光区和发光区，其中，多个所述透光区用于对应光传感器；其中，
    所述发光结构包括位于所述透光区的第一光提取层。
  11. 根据权利要求10所述的电子设备，其中，所述光传感器位于所述基板的远离所述薄膜晶体管层的一侧，所述光传感器为摄像头。
  12. 一种显示面板的制作方法，其中，该方法包括以下步骤：
    提供基板；
    形成位于所述基板上方的薄膜晶体管层；
    形成位于所述薄膜晶体管层上方的像素定义层，所述像素定义层具有通孔；
    形成位于所述通孔底部的阳极；
    形成覆盖所述像素定义层和所述阳极的发光层；
    形成覆盖所述发光层的阴极；
    在所述像素定义层顶部上方形成第一光提取层。
  13. 根据权利要求12所述的显示面板的制作方法，其中，在所述像素定义层顶部上方形成第一光提取层的方法还包括：
    形成覆盖所述第一光提取层和所述阴极的第二光提取层；
    覆盖所述阴极的第二光提取层。
  14. 根据权利要求13所述的显示面板的制作方法，其中，在所述像素定义层顶部上方形成第一光提取层的方法包括：
    在所述像素定义层顶部上方的区域中形成穿孔，所述穿孔的深度小于或等于所述发光层和所述阴极层的厚度之和；
    在所述穿孔中淀积透光保护材料，形成第一光提取层。
  15. 根据权利要求13所述的显示面板的制作方法，其中，在所述像素定义层顶部上方形成第一光提取层的方法包括；
    在所述阴极表面淀积透光保护材料；
    去除位于所述阳极和所述像素定义层侧壁的透光保护材料，保留位于所述像素定义层顶部的透光材料，形成第一光提取层。
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