WO2018059028A1 - 双面显示面板及其制作方法、显示装置 - Google Patents

双面显示面板及其制作方法、显示装置 Download PDF

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Publication number
WO2018059028A1
WO2018059028A1 PCT/CN2017/090020 CN2017090020W WO2018059028A1 WO 2018059028 A1 WO2018059028 A1 WO 2018059028A1 CN 2017090020 W CN2017090020 W CN 2017090020W WO 2018059028 A1 WO2018059028 A1 WO 2018059028A1
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Prior art keywords
layer
organic light
emitting layer
double
forming
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PCT/CN2017/090020
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English (en)
French (fr)
Inventor
田宏伟
牛亚男
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京东方科技集团股份有限公司
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Priority to US15/578,446 priority Critical patent/US10665659B2/en
Publication of WO2018059028A1 publication Critical patent/WO2018059028A1/zh

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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • H10K50/805Electrodes
    • H10K50/81Anodes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • H10K50/805Electrodes
    • H10K50/82Cathodes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/12Active-matrix OLED [AMOLED] displays
    • H10K59/121Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/12Active-matrix OLED [AMOLED] displays
    • H10K59/123Connection of the pixel electrodes to the thin film transistors [TFT]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/12Active-matrix OLED [AMOLED] displays
    • H10K59/128Active-matrix OLED [AMOLED] displays comprising two independent displays, e.g. for emitting information from two major sides of the display
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • H10K50/84Passivation; Containers; Encapsulations
    • H10K50/842Containers
    • H10K50/8428Vertical spacers, e.g. arranged between the sealing arrangement and the OLED
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • H10K50/84Passivation; Containers; Encapsulations
    • H10K50/844Encapsulations
    • H10K50/8445Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers

Definitions

  • the present disclosure relates to the field of display technologies, and in particular, to a double-sided display panel, a manufacturing method thereof, and a display device.
  • the double-sided display panel in the related art is actually a combination of two independent display panels, and the internal structure and the driving system for driving the illumination of two independent display panels are relatively complicated, and there are certain problems not only in the synchronization of the display.
  • the manufacturing cost of the double-sided display panel is relatively high, and the thickness of the product is relatively large, which does not conform to the trend of thinning and thinning of the display panel.
  • the technical problem to be solved by the present disclosure is to provide a double-sided display panel, a manufacturing method thereof, and a display device, which can realize synchronization of double-sided display, and can effectively reduce the thickness and volume of the double-sided display substrate, and reduce the double-sided display. Substrate preparation cost and energy cost.
  • a double-sided display panel including:
  • a first switching thin film transistor for controlling light emission of the first organic light emitting layer
  • the gate of the first switching thin film transistor is multiplexed into a gate of the second switching thin film transistor, or the gate of the first switching thin film transistor is connected to a gate of the second switching thin film transistor.
  • the first luminescent layer is located on a first side of the substrate
  • the second organic luminescent layer is at least partially located on a second side of the substrate, and the first side is opposite the second side.
  • first anode layer and a first cathode layer further including a first anode layer and a first cathode layer, a second anode layer and a second cathode layer,
  • the first organic light emitting layer is located between the first anode layer and the first cathode layer;
  • the second organic light emitting layer is located between the second anode layer and the second cathode layer.
  • first anode layer, the first cathode layer, the first switching thin film transistor, the second switching thin film transistor, and the second anode layer are located on a first side of the substrate;
  • the second cathode layer is located on a second side of the substrate
  • the substrate includes an opening region corresponding to the second anode layer, and the second organic light emitting layer is connected to the second anode layer through the opening region.
  • first pixel defining layer on a side of the first anode layer facing away from the substrate, the first pixel defining layer defining a first pixel region, and the first organic light emitting layer is located in a first pixel region;
  • a second pixel located on a second side of the substrate defines a layer, the second pixel defining layer defines a second pixel region, and the second organic light emitting layer is located within the second pixel region.
  • a second encapsulation layer on a side of the second cathode layer facing away from the substrate.
  • first encapsulation layer and the second encapsulation layer are package films
  • the encapsulation film comprises an inorganic film and an organic film which are alternately stacked.
  • first encapsulation layer and the second encapsulation layer are package substrates
  • the double-sided display panel further includes:
  • a first spacer located between the first pixel defining layer and the first encapsulation layer
  • the above substrate is a flexible substrate.
  • Embodiments of the present disclosure also provide a display device including the double-sided display panel as described above.
  • the embodiment of the present disclosure further provides a method for manufacturing a double-sided display panel for manufacturing the double-sided display panel as described above, the method comprising:
  • the gate of the first switching thin film transistor is multiplexed into a gate of the second switching thin film transistor, or the gate of the first switching thin film transistor is connected to a gate of the second switching thin film transistor.
  • forming the first organic light emitting layer for front display comprises:
  • Forming the second organic light emitting layer for the reverse display further includes:
  • At least a portion of the second organic light-emitting layer is formed on a second side of the flexible substrate opposite the first side.
  • the method further includes:
  • a pixel defining layer defines a first pixel region
  • Forming the first organic light emitting layer further includes:
  • the method further includes include:
  • the method further includes:
  • Forming at least a portion of the second organic light emitting layer further includes:
  • the method further includes:
  • a second cathode layer is formed on the second organic light emitting layer.
  • the method further includes:
  • the method further includes:
  • a second encapsulation layer is formed on a side of the second cathode layer facing away from the flexible substrate.
  • the first organic light emitting layer for front display and the second organic light emitting layer for reverse display are integrated together, while controlling the first switching thin film transistor of the first organic light emitting layer to emit light and controlling the second organic light emitting
  • the gates of the layer-emitting second switching thin film transistors are shared or gated together, which can realize the synchronization of the double-sided display, and can realize the preparation of the double-sided display panel without affecting and increasing the difficulty of the existing process;
  • the utility model not only effectively reduces the thickness and volume of the double-sided display panel, but also reduces the preparation cost and energy consumption cost of the double-sided display panel, simplifies the design difficulty, shortens the production cycle of the double-sided display panel, and improves the double-sided display.
  • the panel's yield and display quality enable rapid preparation and promotion of double-sided display panels.
  • FIG. 1 is a schematic structural view of a double-sided display panel according to an embodiment of the present disclosure
  • FIG. 2 is a schematic structural view of a double-sided display panel according to an embodiment of the present disclosure
  • FIG. 3 is a schematic structural view of a double-sided display panel according to an embodiment of the present disclosure.
  • FIG. 4 is a schematic structural view of a first encapsulation layer according to an embodiment of the present disclosure
  • FIG. 5 is a display device of an embodiment of the present disclosure.
  • first gate insulating layer 9 first active layer 10 etch stop layer
  • first anode layer 14 first pixel defining layer 15 spacer
  • the embodiments of the present disclosure have certain problems in the synchronization of the display on the double-sided display panel in the related art, and the manufacturing cost of the double-sided display panel is relatively high, and the thickness of the product is relatively large, which does not conform to the trend of thinning and thinning of the display panel.
  • the invention provides a double-sided display panel, a manufacturing method thereof, and a display device, which can realize synchronization of double-sided display, and can effectively reduce the thickness and volume of the double-sided display substrate, and reduce the preparation cost and energy of the double-sided display substrate. Cost.
  • Some embodiments of the present disclosure provide a double-sided display panel, including:
  • a first switching thin film transistor for controlling light emission of the first organic light emitting layer
  • the gate of the first switching thin film transistor is multiplexed into a gate of the second switching thin film transistor, or the gate of the first switching thin film transistor is connected to a gate of the second switching thin film transistor.
  • the first organic light emitting layer for front display and the second organic light emitting layer for reverse display are integrated together while controlling the first switching thin film transistor and control of the first organic light emitting layer to emit light
  • the gates of the second switching thin film transistors emitting light of the second organic light emitting layer are shared or gated together, which can realize the synchronization of the double-sided display, and can realize double-sided display without affecting and increasing the difficulty of the existing process.
  • the preparation of the panel not only effectively reduces the thickness and volume of the double-sided display panel, but also reduces the preparation cost and energy consumption cost of the double-sided display panel, simplifies the design difficulty, and shortens the production cycle of the double-sided display panel and improves the production cycle of the double-sided display panel.
  • the yield and display quality of the double-sided display panel enable rapid preparation and promotion of the double-sided display panel.
  • the double-sided display panel further includes a substrate, the double-sided display panel is disposed on the first side of the substrate for the front side, and the organic light-emitting layer for the reverse display is at least partially located on the second side of the substrate, One side is opposite to the second side, and further, the substrate can be a flexible substrate such that the double-sided display panel can be adapted for use in a flexible display.
  • the flexible substrate may be made of polyimide.
  • the double-sided display panel further includes a first anode layer and a first cathode layer, a second anode layer and a second cathode layer, wherein the first organic light-emitting layer is located at a first anode layer and a first cathode layer corresponding thereto The second organic light-emitting layer is located between the second anode layer and the second cathode layer corresponding thereto.
  • the first anode layer, the first cathode layer, the first switching thin film transistor, the second switching thin film transistor, and the second anode layer and the first organic light emitting layer are located at The first side of the substrate;
  • the second cathode layer is located on a second side of the substrate
  • the substrate includes an opening region corresponding to the second anode layer, and the second organic light emitting layer is connected to the second anode layer through the opening region.
  • the double-sided display panel is an OLED (Organic Electro Luminescence) display panel, and the double-sided display panel further includes:
  • first pixel defining layer on a side of the first anode layer facing away from the substrate, the first image
  • the first defining layer defines a first pixel region, and the first organic light emitting layer is located in the first pixel region;
  • a second pixel located on a second side of the substrate defines a layer, the second pixel defining layer defines a second pixel region, and the second organic light emitting layer is located within the second pixel region.
  • the double-sided display panel further includes:
  • a second encapsulation layer on a side of the second cathode layer facing away from the substrate.
  • the first encapsulation layer and the second encapsulation layer are encapsulated films, and the encapsulation film comprises an inorganic film and an organic film which are alternately laminated, so that the double-sided display panel can be applied to a flexible display, and the inorganic film
  • the encapsulating film formed by alternately laminating with the organic film has better water and oxygen barrier properties.
  • the package layer adopts a package substrate
  • the double-sided display panel further includes:
  • a first spacer located between the first pixel defining layer and the first encapsulation layer
  • the double-sided display panel is taken as an example of the OLED display panel, and the double-sided display panel of the present embodiment is described in detail with reference to FIG. 1 .
  • the double-sided display panel of the present embodiment includes a flexible substrate 1, which may be formed on a rigid substrate during fabrication.
  • the flexible substrate 1 includes opposite first and second sides, and a first organic light-emitting layer 16 for front display is formed on a first side of the flexible substrate 1, the first organic light-emitting layer 16 being located on the first anode layer 13 and Between the first cathode layer 19 and the pixel region defined by the first pixel defining layer 14, the first side of the flexible substrate 1 is further formed with a first switching thin film transistor for driving the first organic light emitting layer 16 for display.
  • a switching thin film transistor includes a gate 7, a first active layer 9, a first gate insulating layer 8, a first source 111, and a first drain 112.
  • a second organic light-emitting layer 17 for reverse display is formed on the second side of the flexible substrate 1, and the second organic light-emitting layer 17 is located between the second anode layer 2 and the second cathode layer 20, and is located at the second pixel defining layer 18.
  • the second anode layer 2 and the second switching thin film transistor that drives the second organic light-emitting layer 17 to emit light are both located on the first side of the flexible substrate 1, and the second organic light-emitting layer 17 passes through the flexible substrate 1
  • the open region is connected to the second anode layer 2, and the second switching thin film transistor includes a gate 7, a second source 41, a second drain 42, a second active layer 5, and a second gate insulating layer 6.
  • first switching thin film transistor and the second switching thin film transistor share the same gate, thereby enabling synchronization of the double-sided display.
  • the double-sided display panel further includes a first encapsulation layer 21 on a side of the first cathode layer 19 facing away from the flexible substrate 1 and a first encapsulation layer 22 on a side of the second cathode layer 20 facing away from the flexible substrate 1 .
  • a spacer 15 supporting the first encapsulation layer 21 and the second encapsulation layer 22 is also disposed on the first pixel defining layer 14 and the second pixel defining layer 18, respectively.
  • the double-sided display panel of the embodiment of the present disclosure is not a combination of two independent display panels, but integrates two organic light-emitting layers together, which not only effectively reduces the thickness and volume of the double-sided display panel, but also reduces
  • the manufacturing cost and energy cost of the double-sided display panel simplify the design difficulty, shorten the production cycle of the double-sided display panel, improve the yield and display quality of the double-sided display panel, and realize the rapid display of the double-sided display panel. Preparation and promotion.
  • the first switching thin film transistor and the second switching thin film transistor are designed on the same side of the flexible substrate for the purpose of sharing the gates of the first switching thin film transistor and the second switching thin film transistor, of course, A switching thin film transistor and a second switching thin film transistor may also be located on different sides of the flexible substrate as long as the gates of the first switching thin film transistor and the second switching thin film transistor are connected together.
  • the package may be packaged without using a hard substrate, and the package film may be used for packaging.
  • the spacer may not be provided.
  • the display device may be any product or component having a display function, such as a television, a display, a digital photo frame, a mobile phone, a tablet computer, etc., wherein the display device further includes a flexible circuit board, a printed circuit board, and a backboard.
  • Some embodiments of the present disclosure also provide a method for fabricating a double-sided display panel for fabricating the double-sided display panel as described above, the method comprising:
  • the gate of the first switching thin film transistor is multiplexed into a gate of the second switching thin film transistor, or the gate of the first switching thin film transistor is connected to a gate of the second switching thin film transistor.
  • the first organic light emitting layer for front display and the second organic light emitting layer for reverse display are integrated together, while controlling the first switching thin film transistor of the first organic light emitting layer and controlling the second organic
  • the gate of the second switching thin film transistor emitting light of the light emitting layer is shared or gated together, which can realize the synchronization of the double-sided display, and can realize the preparation of the double-sided display panel without affecting and increasing the difficulty of the existing process.
  • the invention not only effectively reduces the thickness and volume of the double-sided display panel, but also reduces the preparation cost and energy consumption cost of the double-sided display panel, simplifies the design difficulty, shortens the production cycle of the double-sided display panel, and improves the double-sided
  • the display panel yield and display quality enable rapid preparation and promotion of the double-sided display panel.
  • the first organic light-emitting layer and the second organic light-emitting layer may be formed on different sides of the flexible substrate to form the first surface for front display
  • the organic light emitting layer further includes:
  • the first organic light emitting layer is formed on a first side of the flexible substrate opposite to the hard substrate.
  • Forming the second organic light-emitting layer for the reverse display further includes:
  • At least a portion of the second organic light-emitting layer is formed on a second side of the flexible substrate opposite the first side.
  • the double-sided display panel further includes a first switching thin film transistor for driving the first organic light emitting layer for display, a first anode layer and a first cathode layer, a second switching thin film transistor for driving the second organic light emitting layer for display, and a second anode layer And the second cathode layer, before the first organic light-emitting layer is formed on the first side of the flexible substrate opposite to the hard substrate, the method further includes:
  • a pixel defining layer defines a first pixel region
  • Forming the first organic light emitting layer further includes:
  • the method further includes:
  • the method further includes:
  • Forming at least a portion of the second organic light emitting layer further includes:
  • the method further includes:
  • a second cathode layer is formed on the second organic light emitting layer.
  • the method further includes:
  • the method further includes:
  • a second encapsulation layer is formed on a side of the second cathode layer facing away from the flexible substrate.
  • the manufacturing method of the embodiment of the present disclosure specifically includes the following steps.
  • the method for manufacturing the embodiment of the present disclosure is described in detail with reference to FIG. 1 and FIG. :
  • Providing a rigid substrate which may be a glass substrate or a quartz substrate;
  • step 4 Depositing a layer of inorganic material on the flexible substrate 1 through step 3, and forming a pattern of the second passivation layer 3 including via holes by a patterning process;
  • the semiconductor material can be made of low temperature polysilicon
  • a layer of insulating material is deposited on the flexible substrate 1 through step 6, forming a second gate insulating layer 6;
  • step 14 Forming a first pixel defining layer 14 on the flexible substrate 1 through step 14;
  • the completed display device is inverted, the flexible substrate 1 is processed to expose the second anode layer 2;
  • the second encapsulation layer 22 is bonded to complete the encapsulation of the display device on the second side of the flexible substrate 1.
  • the double-sided display panel of the present embodiment can be produced through the above steps 1-25.
  • the package can be packaged without using a hard substrate, and the package film can be used for packaging.
  • the spacer can be omitted.
  • FIG. 3 is a schematic structural view of a double-sided display panel of an embodiment of the present disclosure.
  • the structure of the double-sided display panel of the embodiment of the present disclosure shown in FIG. 3 is substantially the same as the structure of the double-sided display panel of the embodiment of the present disclosure shown in FIG. 1 except that the first switching thin film transistor includes the gate 71 and the second switch.
  • the thin film transistor includes a gate 72, the gate 71 of the first switching thin film transistor is connected to the gate 72 of the second switching thin film transistor, and the gate 71 of the first switching thin film transistor and the gate 72 of the second switching thin film transistor A third gate insulating layer 23 is disposed therebetween.
  • the first encapsulation layer 21 is shown to include only one inorganic film and one organic film, those skilled in the art will appreciate that the first encapsulation layer 21 may include any combination of at least one inorganic film and at least one organic film.
  • the second encapsulation layer 22 may have the same number or different number of inorganic and organic films as the first encapsulation layer.
  • FIG. 5 is a display device 500 according to an embodiment of the present disclosure, which includes the above-described double-sided display panel 501.

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Abstract

一种双面显示面板及其制作方法、显示装置,属于显示技术领域。其中,双面显示面板包括:用于正面显示的第一有机发光层(16);用于反面显示的第二有机发光层(17);用于控制第一有机发光层发光的第一开关薄膜晶体管;以及用于控制第二有机发光层发光的第二开关薄膜晶体管,其中第一开关薄膜晶体管的栅极(7)复用为第二开关薄膜晶体管的栅极,或第一开关薄膜晶体管的栅极与第二开关薄膜晶体管的栅极连接。

Description

双面显示面板及其制作方法、显示装置
相关申请的交叉引用
本申请主张在2016年9月30日在中国提交的中国专利申请号No.201610875420.3的优先权,其全部内容通过引用包含于此。
技术领域
本公开涉及显示技术领域,具体涉及一种双面显示面板及其制作方法、显示装置。
背景技术
目前,市场上的显示装置大多以单面显示为主,在许多场合中,例如在数字标牌、电子通讯器材、收银设施、窗口问询设施、展览馆等公共场所的广告播放设施中往往需要用户从显示装置的正反两面同时观看显示的画面,双面显示获得了越来越多的应用。
然而,相关技术中的双面显示面板实际是两个独立的显示面板的组合体,其内部结构以及驱动两个独立显示面板发光的驱动系统均较为复杂,不仅在显示的同步上存在一定的问题,并且双面显示面板的制作成本也比较高,产品的厚度比较大,不符合显示面板轻薄化的趋势。
发明内容
本公开要解决的技术问题是提供一种双面显示面板及其制作方法、显示装置,能够实现双面显示的同步,并且能够有效地减小双面显示基板的厚度和体积,降低双面显示基板的制备成本与能耗成本。
为解决上述技术问题,本公开的实施例提供技术方案如下:
一方面,提供一种双面显示面板,包括:
用于正面显示的第一有机发光层;
用于反面显示的第二有机发光层;
用于控制所述第一有机发光层发光的第一开关薄膜晶体管;以及
用于控制所述第二有机发光层发光的第二开关薄膜晶体管,
其中,所述第一开关薄膜晶体管的栅极复用为所述第二开关薄膜晶体管的栅极,或所述第一开关薄膜晶体管的栅极与所述第二开关薄膜晶体管的栅极连接。
进一步地,还包括:
基底,
其中,所述第一发光层位于所述基底的第一侧,所述第二有机发光层至少部分地位于所述基底的第二侧,以及所述第一侧与所述第二侧相反。
进一步地,还包括第一阳极层和第一阴极层,第二阳极层和第二阴极层,
所述第一有机发光层位于第一阳极层和第一阴极层之间;
所述第二有机发光层位于第二阳极层和第二阴极层之间。
进一步地,所述第一阳极层、第一阴极层、所述第一开关薄膜晶体管、所述第二开关薄膜晶体管和所述第二阳极层位于所述基底的第一侧;
所述第二阴极层位于所述基底的第二侧;
所述基底包括有对应所述第二阳极层的开口区域,所述第二有机发光层通过所述开口区域与所述第二阳极层连接。
进一步地,还包括:
位于所述第一阳极层背向所述基底一侧的第一像素界定层,所述第一像素界定层限定出第一像素区域,所述第一有机发光层位于第一像素区域内;
位于所述基底的第二侧的第二像素界定层,所述第二像素界定层限定出第二像素区域,所述第二有机发光层位于第二像素区域内。
进一步地,还包括:
位于所述第一阴极层背向所述基底一侧的第一封装层;以及
位于所述第二阴极层背向所述基底一侧的第二封装层。
进一步地,所述第一封装层和所述第二封装层采用封装薄膜,所述封装薄膜包括交替层叠设置的无机薄膜和有机薄膜。
进一步地,所述第一封装层和所述第二封装层采用封装基板,所述双面显示面板还包括:
位于所述第一像素界定层和所述第一封装层之间的第一隔垫物;以及
位于所述第二像素界定层和所述第二封装层之间的第二隔垫物。
进一步地,上述基底为柔性基底。
本公开实施例还提供了一种显示装置,包括如上所述的双面显示面板。
本公开实施例还提供了一种双面显示面板的制作方法,用于制作如上所述的双面显示面板,所述方法包括:
形成用于正面显示的第一有机发光层;
形成用于反面显示的第二有机发光层;
形成用于控制所述第一有机发光层发光的第一开关薄膜晶体管;以及
形成用于控制所述第二有机发光层发光的第二开关薄膜晶体管,
其中,所述第一开关薄膜晶体管的栅极复用为所述第二开关薄膜晶体管的栅极,或所述第一开关薄膜晶体管的栅极与所述第二开关薄膜晶体管的栅极连接。
进一步地,形成用于正面显示的第一有机发光层包括:
提供一硬质基板;
在所述硬质基板上形成一柔性基底;以及
在所述柔性基底的与所述硬质基板相背的第一侧形成所述第一有机发光层,以及
形成用于反面显示的第二有机发光层还包括:
将所述柔性基底从所述硬质基板上剥离;以及
在所述柔性基底与所述第一侧相背的第二侧形成至少部分所述第二有机发光层。
进一步地,在所述柔性基底的与所述硬质基板相背的第一侧形成所述第一有机发光层之前,所述方法还包括:
在所述柔性基底的第一侧依次形成所述第二阳极层、所述第二开关薄膜晶体管、所述第一开关薄膜晶体管、所述第一阳极层和第一像素界定层,所述第一像素界定层限定出第一像素区域;
形成所述第一有机发光层还包括:
在所述第一像素区域内形成所述第一有机发光层;
在所述柔性基底的第一侧形成所述第一有机发光层之后,所述方法还包 括:
在所述第一有机发光层上形成第一阴极层;
在所述柔性基底的第二侧形成至少部分所述第二有机发光层之前,所述方法还包括:
对所述柔性基底进行处理,使所述柔性基底形成暴露出所述第二阳极层的开口区域;
在所述柔性基底的第二侧形成第二像素界定层,所述第二像素界定层限定出第二像素区域;
形成至少部分所述第二有机发光层还包括:
在所述第二像素区域内形成所述第二有机发光层,所述第二有机发光层通过所述开口区域与所述第二阳极层连接;
在所述柔性基底的第二侧形成至少部分所述第二有机发光层之后,所述方法还包括:
在所述第二有机发光层上形成第二阴极层。
进一步地,形成所述第一阴极层之后,所述方法还包括:
在所述第一阴极层背向所述柔性基底的一侧形成第一封装层;
形成所述第二阴极层之后,所述方法还包括:
在所述第二阴极层背向所述柔性基底的一侧形成第二封装层。
本公开的实施例具有以下有益效果:
上述方案中,将用于正面显示的第一有机发光层和用于反面显示的第二有机发光层集成在一起,同时控制第一有机发光层发光的第一开关薄膜晶体管和控制第二有机发光层发光的第二开关薄膜晶体管的栅极共用或者栅极连接在一起,能够实现双面显示的同步,并且能在不影响和增加现有工艺难度的情况下,实现双面显示面板的制备;不仅有效地减小了双面显示面板的厚度和体积,降低了双面显示面板的制备成本与能耗成本,简化了设计难度,而且缩短了双面显示面板的生产周期,提升了双面显示面板的良率和显示质量,从而实现了双面显示面板的快速制备与推广。
附图说明
图1为本公开实施例双面显示面板的结构示意图;
图2为本公开实施例双面显示面板制作过程中的结构示意图;
图3为本公开实施例双面显示面板的结构示意图;
图4为本公开实施例第一封装层的结构示意图;以及
图5为本公开实施例的显示装置。
附图标记
1柔性基底        2第二阳极层      3第二钝化层   41第二源极
42第二漏极       5第二有源层      6第二栅绝缘层
7栅极            71栅极           72栅极
8第一栅绝缘层    9第一有源层      10刻蚀阻挡层
111第一源极      112第一漏极      12第一钝化层
13第一阳极层     14第一像素界定层 15隔垫物
16第一有机发光层 17第二有机发光层 18第二像素界定层
19第一阴极层     20第二阴极层     21第一封装层
22第二封装层     23第三栅绝缘层   211无机薄膜
212有机薄膜      500显示装置      501显示面板
具体实施方式
为使本公开的实施例要解决的技术问题、技术方案和优点更加清楚,下面将结合附图及具体实施例进行详细描述。
本公开的实施例针对相关技术中双面显示面板在显示的同步上存在一定的问题,并且双面显示面板的制作成本也比较高,产品的厚度比较大,不符合显示面板轻薄化的趋势的问题,提供一种双面显示面板及其制作方法、显示装置,能够实现双面显示的同步,并且能够有效地减小双面显示基板的厚度和体积,降低双面显示基板的制备成本与能耗成本。
本公开的一些实施例提供一种双面显示面板,包括:
用于正面显示的第一有机发光层;
用于反面显示的第二有机发光层;
用于控制所述第一有机发光层发光的第一开关薄膜晶体管;以及
用于控制所述第二有机发光层发光的第二开关薄膜晶体管,
其中,所述第一开关薄膜晶体管的栅极复用为所述第二开关薄膜晶体管的栅极,或所述第一开关薄膜晶体管的栅极与所述第二开关薄膜晶体管的栅极连接。
在本公开的实施例中,将用于正面显示的第一有机发光层和用于反面显示的第二有机发光层集成在一起,同时控制第一有机发光层发光的第一开关薄膜晶体管和控制第二有机发光层发光的第二开关薄膜晶体管的栅极共用或者栅极连接在一起,能够实现双面显示的同步,并且能在不影响和增加现有工艺难度的情况下,实现双面显示面板的制备;不仅有效地减小了双面显示面板的厚度和体积,降低了双面显示面板的制备成本与能耗成本,简化了设计难度,而且缩短了双面显示面板的生产周期,提升了双面显示面板的良率和显示质量,从而实现了双面显示面板的快速制备与推广。
进一步地,双面显示面板还包括基底,双面显示面板用于正面显示的有机发光层位于基底的第一侧,以及用于反面显示的有机发光层至少部分地位于基底的第二侧,第一侧与第二侧相反,进一步地,基底可以为柔性基底,这样双面显示面板可以适用于柔性显示中。具体地,柔性基底可以采用聚酰亚胺制成。
进一步地,双面显示面板还包括第一阳极层和第一阴极层,第二阳极层和第二阴极层,所述第一有机发光层位于与其对应的第一阳极层和第一阴极层之间;所述第二有机发光层位于与其对应的第二阳极层和第二阴极层之间。
一具体实施例中,所述第一阳极层、第一阴极层、所述第一开关薄膜晶体管、所述第二开关薄膜晶体管和所述第二阳极层与所述第一有机发光层位于所述基底的第一侧;
所述第二阴极层位于所述基底的第二侧;
所述基底包括有对应所述第二阳极层的开口区域,所述第二有机发光层通过所述开口区域与所述第二阳极层连接。
另一具体实施例中,双面显示面板为OLED(有机电致发光)显示面板,双面显示面板还包括:
位于所述第一阳极层背向所述基底一侧的第一像素界定层,所述第一像 素界定层限定出第一像素区域,所述第一有机发光层位于第一像素区域内;
位于所述基底的第二侧的第二像素界定层,所述第二像素界定层限定出第二像素区域,所述第二有机发光层位于第二像素区域内。
另一具体实施例中,双面显示面板还包括:
位于所述第一阴极层背向所述基底一侧的第一封装层;以及
位于所述第二阴极层背向所述基底一侧的第二封装层。
进一步地,所述第一封装层和所述第二封装层采用封装薄膜,所述封装薄膜包括交替层叠设置的无机薄膜和有机薄膜,这样双面显示面板可以适用于柔性显示中,并且无机薄膜和有机薄膜交替层叠设置形成的封装薄膜具有较好的阻水阻氧性能。
进一步地,在双面显示面板不是应用在柔性显示中时,封装层采用封装基板,双面显示面板还包括:
位于所述第一像素界定层和所述第一封装层之间的第一隔垫物;以及
位于所述第二像素界定层和所述第二封装层之间的第二隔垫物。
下面以双面显示面板为OLED显示面板为例,结合图1对本实施例的双面显示面板进行详细介绍。如图1所示,本实施例的双面显示面板包括柔性基底1,在制作过程中,柔性基底1可以是形成在硬质基板上。柔性基底1包括有相背的第一侧和第二侧,在柔性基底1的第一侧形成有用于正面显示的第一有机发光层16,第一有机发光层16位于第一阳极层13和第一阴极层19之间,且位于第一像素界定层14限定出的像素区域内,柔性基底1的第一侧还形成有驱动第一有机发光层16进行显示的第一开关薄膜晶体管,第一开关薄膜晶体管包括栅极7、第一有源层9、第一栅绝缘层8、第一源极111和第一漏极112。在柔性基底1的第二侧形成有用于反面显示的第二有机发光层17,第二有机发光层17位于第二阳极层2和第二阴极层20之间,且位于第二像素界定层18限定出的像素区域内,其中,第二阳极层2和驱动第二有机发光层17进行发光的第二开关薄膜晶体管均位于柔性基底1的第一侧,第二有机发光层17通过柔性基底1的开口区域与第二阳极层2连接,第二开关薄膜晶体管包括栅极7、第二源极41、第二漏极42、第二有源层5、第二栅绝缘层6。
可以看出,第一开关薄膜晶体管和第二开关薄膜晶体管共用同一个栅极,从而能够实现双面显示的同步。
进一步地,双面显示面板还包括有位于第一阴极层19背向柔性基底1一侧的第一封装层21和位于第二阴极层20背向柔性基底1一侧的第一封装层22,在第一像素界定层14和第二像素界定层18上还分别设置有支撑第一封装层21和第二封装层22的隔垫物15。
本公开的实施例的双面显示面板不是两个独立的显示面板的组合体,而是将两个有机发光层集成在一起,不仅有效地减小了双面显示面板的厚度和体积,降低了双面显示面板的制备成本与能耗成本,简化了设计难度,而且缩短了双面显示面板的生产周期,提升了双面显示面板的良率和显示质量,从而实现了双面显示面板的快速制备与推广。
本公开的实施例中,出于第一开关薄膜晶体管和第二开关薄膜晶体管的栅极共用的目的,将第一开关薄膜晶体管和第二开关薄膜晶体管设计在柔性基底的同一侧,当然,第一开关薄膜晶体管和第二开关薄膜晶体管还可以位于柔性基底的不同侧,只要第一开关薄膜晶体管和第二开关薄膜晶体管的栅极连接在一起即可。
在本公开的实施例的双面显示面板应用在柔性显示中时,可以不采用硬质基板进行封装,采用封装薄膜进行封装,在采用封装薄膜进行封装时,可以不用设置隔垫物。
本公开的一些实施例提供了一种显示装置,包括如上所述的双面显示面板。所述显示装置可以为:电视、显示器、数码相框、手机、平板电脑等任何具有显示功能的产品或部件,其中,所述显示装置还包括柔性电路板、印刷电路板和背板。
本公开的一些实施例还提供了一种双面显示面板的制作方法,用于制作如上所述的双面显示面板,所述方法包括:
形成用于正面显示的第一有机发光层;
形成用于反面显示的第二有机发光层;
形成用于控制所述第一有机发光层发光的第一开关薄膜晶体管;以及
形成用于控制所述第二有机发光层发光的第二开关薄膜晶体管,
其中,所述第一开关薄膜晶体管的栅极复用为所述第二开关薄膜晶体管的栅极,或所述第一开关薄膜晶体管的栅极与所述第二开关薄膜晶体管的栅极连接。
本实施例中,将用于正面显示的第一有机发光层和用于反面显示的第二有机发光层集成在一起,同时控制第一有机发光层发光的第一开关薄膜晶体管和控制第二有机发光层发光的第二开关薄膜晶体管的栅极共用或者栅极连接在一起,能够实现双面显示的同步,并且能在不影响和增加现有工艺难度的情况下,实现双面显示面板的制备;不仅有效地减小了双面显示面板的厚度和体积,降低了双面显示面板的制备成本与能耗成本,简化了设计难度,而且缩短了双面显示面板的生产周期,提升了双面显示面板的良率和显示质量,从而实现了双面显示面板的快速制备与推广。
具体地,在本实施例制作的双面显示面板应用于柔性显示中时,第一有机发光层和第二有机发光层可以形成在柔性基底的不同侧,形成用于正面显示的所述第一有机发光层还包括:
提供一硬质基板;
在所述硬质基板上形成一柔性基底;以及
在所述柔性基底的与硬质基板相背的第一侧形成所述第一有机发光层。
形成用于反面显示的地二有机发光层还包括:
将所述柔性基底从所述硬质基板上剥离;以及
在所述柔性基底与所述第一侧相背的第二侧形成至少部分所述第二有机发光层。
双面显示面板还包括驱动第一有机发光层进行显示的第一开关薄膜晶体管、第一阳极层和第一阴极层,驱动第二有机发光层进行显示的第二开关薄膜晶体管、第二阳极层和第二阴极层,在所述柔性基底的与硬质基板相背的第一侧形成所述第一有机发光层之前,所述方法还包括:
在所述柔性基底的第一侧依次形成所述第二阳极层、所述第二开关薄膜晶体管、所述第一开关薄膜晶体管、所述第一阳极层和第一像素界定层,所述第一像素界定层限定出第一像素区域;
形成所述第一有机发光层还包括:
在所述第一像素区域内形成所述第一有机发光层;
在所述柔性基底的第一侧形成所述第一有机发光层之后,所述方法还包括:
在所述第一有机发光层上形成第一阴极层;
在所述柔性基底的第二侧形成至少部分所述第二有机发光层之前,所述方法还包括:
对所述柔性基底进行处理,使所述柔性基底形成暴露出所述第二阳极层的开口区域;
在所述柔性基底的第二侧形成第二像素界定层,所述第二像素界定层限定出第二像素区域;
形成至少部分所述第二有机发光层还包括:
在所述第二像素区域内形成所述第二有机发光层,所述第二有机发光层通过所述开口区域与所述第二阳极层连接;
在所述柔性基底的第二侧形成至少部分所述第二有机发光层之后,所述方法还包括:
在所述第二有机发光层上形成第二阴极层。
进一步地,形成所述第一阴极层之后,所述方法还包括:
在所述第一阴极层背向所述柔性基底的一侧形成第一封装层;
形成所述第二阴极层之后,所述方法还包括:
在所述第二阴极层背向所述柔性基底的一侧形成第二封装层。
下面以双面显示面板为OLED显示面板,封装层为硬质基板为例,结合图1和图2对本公开的实施例的制作方法进行详细介绍,本公开的实施例的制作方法具体包括以下步骤:
1、提供一硬质基板,硬质基板可以为玻璃基板或石英基板;
2、在清洁过的硬质基板上涂覆一层聚酰亚胺膜,经固化后形成柔性基底1,固化后的柔性基底1的厚度小于
Figure PCTCN2017090020-appb-000001
3、在柔性基底1上沉积一层导电层,通过构图工艺形成第二阳极层2;
4、在经过步骤3的柔性基底1上沉积一层无机材料,通过构图工艺形成包括有过孔的第二钝化层3的图形;
5、在第二钝化层上沉积一层导电层,通过构图工艺形成第二源极41和第二漏极42,第二漏极42通过贯穿第二钝化层3的过孔与第二阳极层2连接;
6、在经过步骤5的柔性基底1上沉积一层半导体材料,通过构图工艺形成第二有源层5的图形,第二有源层5分别与第二源极41和第二漏极42连接,其中,半导体材料可以采用低温多晶硅;
7、在经过步骤6的柔性基底1上沉积一层绝缘材料,形成第二栅绝缘层6;
8、在第二栅绝缘层6上沉积一层导电层,通过构图工艺形成栅极7的图形,栅极7、第二栅绝缘层6、第二漏极42、第二源极41和第二有源层5组成第二开关薄膜晶体管;
9、在经过步骤8的柔性基底1上沉积一层绝缘材料,形成第一栅绝缘层8;
10、在第一栅绝缘层8上沉积一层半导体材料,通过构图工艺形成第一有源层9,其中,半导体材料可以采用低温多晶硅;
11、在经过步骤10的柔性基底1上沉积一层绝缘材料,通过构图工艺形成包括有过孔的刻蚀阻挡层10的图形;
12、在刻蚀阻挡层10上沉积一层导电层,通过构图工艺形成第一源极111和第一漏极112的图形,第一源极111和第一漏极112分别通过贯穿刻蚀阻挡层10的过孔与第一有源层9连接;
13、在经过步骤12的柔性基底1上沉积一层绝缘材料,通过构图工艺形成包括有过孔的第一钝化层12的图形;
14、在第一钝化层12上沉积一层导电材料,通过构图工艺形成第一阳极层13;
15、在经过步骤14的柔性基底1上形成第一像素界定层14;
16、在第一像素界定层14上形成支撑第一封装层21的隔垫物15;
17、在第一像素界定层14限定出的像素区域内形成第一有机发光层16;
18、贴合第一封装层,完成柔性基底1第一侧的显示器件的封装;
19、将已完成的显示器件从硬质基板上剥离;
20、将已完成的显示器件倒置,对柔性基底1进行处理,暴露出第二阳极层2;
22、在经过步骤20的柔性基底1上形成第二像素界定层18;
23、在第二像素界定层18上形成支撑第二封装层22的隔垫物15;
24、在第二像素界定层18限定出的像素区域内形成第二有机发光层17;
25、贴合第二封装层22,完成柔性基底1第二侧的显示器件的封装。
经过上述步骤1-25即可制作得到本实施例的双面显示面板。在本实施例制作的双面显示面板应用在柔性显示中时,可以不采用硬质基板进行封装,采用封装薄膜进行封装,在采用封装薄膜进行封装时,可以不用设置隔垫物。
图3示出了本公开实施例的双面显示面板的结构示意图。图3所示的本公开实施例的双面显示面板的结构与图1所示的本公开实施例的双面显示面板的结构基本相同,除了第一开关薄膜晶体管包括栅极71,第二开关薄膜晶体管包括栅极72,第一开关薄膜晶体管的栅极71与第二开关薄膜晶体管的栅极72相连接,以及第一开关薄膜晶体管的栅极71与第二开关薄膜晶体管的栅极72之间设置有第三栅绝缘层23。
图4为本公开实施例的第一封装层21的结构示意图,其中示例性地将第一封装层示出为封装薄膜,并包括交替层叠设置的无机薄膜211和有机薄膜212。虽然在图中示出了第一封装层21仅包括一个无机薄膜和一个有机薄膜,然而本领域技术人员应理解第一封装层21可包括至少一个无机薄膜和至少一个有机薄膜的任何组合,本公开对此没有限制。第二封装层22可与第一封装层具有相同数量或不同数量的无机薄膜和有机薄膜。
图5为本公开实施例的显示装置500,其包括上述的双面显示面板501。
以上所述是本公开的优选实施方式,应当指出,对于本技术领域的普通技术人员来说,在不脱离本公开所述原理的前提下,还可以作出若干改进和润饰,这些改进和润饰也应视为本公开的保护范围。

Claims (14)

  1. 一种双面显示面板,包括:
    用于正面显示的第一有机发光层;
    用于反面显示的第二有机发光层;
    用于控制所述第一有机发光层发光的第一开关薄膜晶体管;以及
    用于控制所述第二有机发光层发光的第二开关薄膜晶体管,
    其中,所述第一开关薄膜晶体管的栅极复用为所述第二开关薄膜晶体管的栅极,或所述第一开关薄膜晶体管的栅极与所述第二开关薄膜晶体管的栅极连接。
  2. 根据权利要求1所述的双面显示面板,还包括:
    基底,
    其中,所述第一发光层位于所述基底的第一侧,所述第二有机发光层至少部分地位于所述基底的第二侧,以及所述第一侧与所述第二侧相反。
  3. 根据权利要求2所述的双面显示面板,还包括第一阳极层和第一阴极层,第二阳极层和第二阴极层,
    所述第一有机发光层位于第一阳极层和第一阴极层之间;
    所述第二有机发光层位于第二阳极层和第二阴极层之间。
  4. 根据权利要求3所述的双面显示面板,其中,所述第一阳极层、第一阴极层、所述第一开关薄膜晶体管、所述第二开关薄膜晶体管和所述第二阳极层位于所述基底的第一侧;
    所述第二阴极层位于所述基底的第二侧;
    所述基底包括有对应所述第二阳极层的开口区域,所述第二有机发光层通过所述开口区域与所述第二阳极层连接。
  5. 根据权利要求4所述的双面显示面板,还包括:
    位于所述第一阳极层背向所述基底一侧的第一像素界定层,所述第一像素界定层限定出第一像素区域,所述第一有机发光层位于第一像素区域内;以及
    位于所述基底的第二侧的第二像素界定层,所述第二像素界定层限定出 第二像素区域,所述第二有机发光层位于第二像素区域内。
  6. 根据权利要求5所述的双面显示面板,还包括:
    位于所述第一阴极层背向所述基底一侧的第一封装层;以及
    位于所述第二阴极层背向所述基底一侧的第二封装层。
  7. 根据权利要求6所述的双面显示面板,其中,
    所述第一封装层和所述第二封装层采用封装薄膜,所述封装薄膜包括交替层叠设置的无机薄膜和有机薄膜。
  8. 根据权利要求6所述的双面显示面板,其中,所述第一封装层和所述第二封装层采用封装基板,所述双面显示面板还包括:
    位于所述第一像素界定层和所述第一封装层之间的第一隔垫物;以及
    位于所述第二像素界定层和所述第二封装层之间的第二隔垫物。
  9. 根据权利要求2-8中任一项所述的双面显示面板,其中,所述基底为柔性基底。
  10. 一种显示装置,包括如权利要求1-9中任一项所述的双面显示面板。
  11. 一种双面显示面板的制作方法,用于制作如权利要求1-9中任一项所述的双面显示面板,所述方法包括:
    形成用于正面显示的第一有机发光层;
    形成用于反面显示的第二有机发光层;
    形成用于控制所述第一有机发光层发光的第一开关薄膜晶体管;以及
    形成用于控制所述第二有机发光层发光的第二开关薄膜晶体管,
    其中,所述第一开关薄膜晶体管的栅极复用为所述第二开关薄膜晶体管的栅极,或所述第一开关薄膜晶体管的栅极与所述第二开关薄膜晶体管的栅极连接。
  12. 根据权利要求11所述的双面显示面板的制作方法,其中,形成用于正面显示的第一有机发光层还包括:
    提供一硬质基板;
    在所述硬质基板上形成一柔性基底;以及
    在所述柔性基底的与所述硬质基板相背的第一侧形成所述第一有机发光层,以及
    形成用于反面显示的第二有机发光层还包括:
    将所述柔性基底从所述硬质基板上剥离;以及
    在所述柔性基底与所述第一侧相背的第二侧形成至少部分所述第二有机发光层。
  13. 根据权利要求12所述的双面显示面板的制作方法,其中,在所述柔性基底的与所述硬质基板相背的第一侧形成所述第一有机发光层之前,所述方法还包括:
    在所述柔性基底的第一侧依次形成所述第二阳极层、所述第二开关薄膜晶体管、所述第一开关薄膜晶体管、所述第一阳极层和第一像素界定层,所述第一像素界定层限定出第一像素区域;
    形成所述第一有机发光层还包括:
    在所述第一像素区域内形成所述第一有机发光层;
    在所述柔性基底的第一侧形成所述第一有机发光层之后,所述方法还包括:
    在所述第一有机发光层上形成第一阴极层;
    在所述柔性基底的第二侧形成至少部分所述第二有机发光层之前,所述方法还包括:
    对所述柔性基底进行处理,使所述柔性基底形成暴露出所述第二阳极层的开口区域;
    在所述柔性基底的第二侧形成第二像素界定层,所述第二像素界定层限定出第二像素区域;
    形成至少部分所述第二有机发光层还包括:
    在所述第二像素区域内形成所述第二有机发光层,所述第二有机发光层通过所述开口区域与所述第二阳极层连接;
    在所述柔性基底的第二侧形成至少部分所述第二有机发光层之后,所述方法还包括:
    在所述第二有机发光层上形成第二阴极层。
  14. 根据权利要求13所述的双面显示面板的制作方法,其中,
    形成所述第一阴极层之后,所述方法还包括:
    在所述第一阴极层背向所述柔性基底的一侧形成第一封装层;
    形成所述第二阴极层之后,所述方法还包括:
    在所述第二阴极层背向所述柔性基底的一侧形成第二封装层。
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