WO2021017320A1 - 有机发光器件、显示装置及有机发光器件的制作方法 - Google Patents

有机发光器件、显示装置及有机发光器件的制作方法 Download PDF

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Publication number
WO2021017320A1
WO2021017320A1 PCT/CN2019/119284 CN2019119284W WO2021017320A1 WO 2021017320 A1 WO2021017320 A1 WO 2021017320A1 CN 2019119284 W CN2019119284 W CN 2019119284W WO 2021017320 A1 WO2021017320 A1 WO 2021017320A1
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layer
cathode
sub
emitting device
organic light
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PCT/CN2019/119284
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English (en)
French (fr)
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王俊媛
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武汉华星光电半导体显示技术有限公司
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Priority to US16/644,914 priority Critical patent/US20210408439A1/en
Publication of WO2021017320A1 publication Critical patent/WO2021017320A1/zh

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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • H10K50/805Electrodes
    • H10K50/82Cathodes
    • H10K50/824Cathodes combined with auxiliary electrodes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • H10K50/805Electrodes
    • H10K50/82Cathodes
    • H10K50/822Cathodes characterised by their shape
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • H10K50/84Passivation; Containers; Encapsulations
    • H10K50/844Encapsulations
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/12Active-matrix OLED [AMOLED] displays
    • H10K59/122Pixel-defining structures or layers, e.g. banks
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/12Active-matrix OLED [AMOLED] displays
    • H10K59/131Interconnections, e.g. wiring lines or terminals
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/60OLEDs integrated with inorganic light-sensitive elements, e.g. with inorganic solar cells or inorganic photodiodes
    • H10K59/65OLEDs integrated with inorganic image sensors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/12Active-matrix OLED [AMOLED] displays
    • H10K59/1201Manufacture or treatment

Definitions

  • the invention relates to the field of display, in particular to an organic light-emitting device, a display device and a manufacturing method of the organic light-emitting device.
  • OLED Organic light-emitting diodes
  • OLED display screens are developing towards a high screen-to-body ratio, and technologies such as flowing sea screens, water drop screens, and full-screen, under-screen cameras have emerged.
  • the camera under panel (CUP) can achieve a display function through a special design, reaching 100% screen-to-body ratio, so the application prospect is more extensive. Due to the poor light transmittance of the pixel definition layer (PDL), anode layer (anode) and cathode layer (cathode), the transmittance of visible light in the camera area under the screen is low, which seriously affects the penetration of the camera area under the screen The light intensity.
  • PDL pixel definition layer
  • anode layer anode layer
  • cathode cathode
  • the purpose of the present invention is to provide an organic light-emitting device, a display device, and a manufacturing method of the organic light-emitting device, which solves the technical problem of low light transmittance of the under-screen camera (CUP) area, and improves the penetration through the under-screen
  • CUP under-screen camera
  • the light intensity of the camera area enhances the light sensitivity of the camera under the screen in the camera area under the screen.
  • the present invention provides an organic light emitting device, which is provided with a display area and an under-screen camera area;
  • the under-screen camera area includes an array substrate, a pixel definition layer, an anode layer, a plurality of sub-pixels, and at least one cathode wiring
  • the pixel definition layer is provided on the array substrate with a plurality of grooves;
  • the anode layer is provided in the grooves;
  • a plurality of the sub-pixels are provided in the corresponding grooves
  • the cathode wiring is arranged on the pixel definition layer and connects a plurality of the sub-pixels in series, and both ends of the cathode wiring extend and are electrically connected to the cathode layer in the display area.
  • cathode trace is linear, wavy, arc or S-line.
  • the sub-pixel includes a light emitting layer and a cathode layer; the light emitting layer is provided on the anode layer in the corresponding groove; the cathode layer is provided on the light emitting layer and completely covers the light emitting layer The upper surface of the layer; the cathode layer is electrically connected to the cathode wiring.
  • the sub-pixels include at least one red sub-pixel, at least one green sub-pixel, and at least one blue sub-pixel.
  • the organic light emitting device further includes a thin film encapsulation layer, which is arranged on the cathode trace.
  • the present invention also provides a display device, including the above-mentioned organic light-emitting device and a sensor, wherein the under-screen camera area is set corresponding to the position of the sensor.
  • the senor includes one or a combination of a camera sensor, a breathing light sensor, a distance sensor, a fingerprint scanner sensor, a microphone sensor, or a transparent antenna sensor.
  • the present invention also provides a manufacturing method of an organic light emitting device, which includes the following steps:
  • At least one cathode wire is formed on the pixel defining layer, the cathode wire is connected to a plurality of the sub-pixels in series, and both ends of the cathode wire are extended to connect to the cathode layer of the display area.
  • the manufacturing method of the organic light emitting device further includes the step of: manufacturing a thin film encapsulation layer on the cathode trace.
  • the production of sub-pixels includes the steps:
  • a cathode layer is formed on the light-emitting layer, and the cathode layer completely covers the upper surface of the light-emitting layer; the cathode layer is electrically connected with the cathode wiring.
  • the beneficial effect of the present invention is to provide an organic light-emitting device, a display device, and a manufacturing method of an organic light-emitting device.
  • FIG. 1 is a schematic cross-sectional structure diagram of an organic light emitting device in an embodiment of the present invention
  • Figure 2 is a partial enlarged view of Figure 1;
  • FIG. 3 is a schematic plan view of an organic light emitting device in an embodiment of the present invention.
  • FIG. 4 is a schematic plan view of another organic light emitting device in an embodiment of the present invention.
  • FIG. 5 is a schematic cross-sectional structure diagram of a display device in an embodiment of the present invention.
  • FIG. 6 is a flowchart of a manufacturing method of an organic light emitting device in an embodiment of the present invention.
  • FIG. 7 is a flow chart of manufacturing the array substrate in FIG. 6;
  • FIG. 8 is a flowchart of making sub-pixels in FIG. 6.
  • Display area 20, camera area under the screen, 30, sensor, 11, glass substrate,
  • the terms “installed”, “connected”, “connected”, “fixed” and other terms should be understood in a broad sense, for example, it can be a fixed connection or a detachable connection. , Or integrated; it can be a mechanical connection or an electrical connection; it can be directly connected or indirectly connected through an intermediate medium, and it can be the internal communication of two components or the interaction relationship between two components.
  • installed can be a fixed connection or a detachable connection. , Or integrated; it can be a mechanical connection or an electrical connection; it can be directly connected or indirectly connected through an intermediate medium, and it can be the internal communication of two components or the interaction relationship between two components.
  • an organic light emitting device 100 is provided, which is provided with a display area 10 and an under-screen camera area 20.
  • the under-screen camera area 20 is circular, rectangular or polygonal.
  • the under-screen camera area 20 includes an array substrate 1, a pixel definition layer 2, an anode layer 3, a plurality of sub-pixels 4, and at least one cathode wiring 5; specifically, the pixel definition layer 2 is provided on the array substrate 1.
  • the cathode wiring 5 is provided on the pixel defining layer 2 and connected to a plurality of the sub-pixels 4 in series, and both ends of the cathode wiring 5 are extended and connected to the cathode layer 8 in the display area 10.
  • the cathode layer 8 and the cathode wiring 5 are located on the same layer and electrically connected.
  • the sub-pixel 4 includes a light-emitting layer 7 and the cathode layer 8; the light-emitting layer 7 is disposed on the anode layer in the corresponding groove 21 3; the cathode layer 8 is provided on the light-emitting layer 7 and completely covers the upper surface of the light-emitting layer 7, that is, the light-emitting layer 7 and the cathode layer 8 are both arranged in a rhombus shape; the cathode layer 8 It is electrically connected to the cathode wire 5.
  • the cathode layer 8 and the cathode wiring 5 can be integrally formed, and both are made of the same material, including indium tin oxide. They are transparent materials, which can increase the light transmittance, thereby increasing the penetration of the screen. The light intensity of the lower camera area 20.
  • the array substrate 1 is a thin film transistor substrate.
  • the thin film transistor (not shown) is located in the display area 10, and is electrically connected to the under-screen camera area through a cathode layer 8 located in the display area 10. 20 of the cathode wiring 5, so as to achieve the display control of a plurality of the sub-pixels 4, and then achieve the maximum light transmittance while displaying images in the camera area 20 under the screen, thereby increasing the penetration of the screen The light intensity of the lower camera area 20.
  • the anode layer 3, the cathode wiring 5, and the cathode layer 8 are made of indium tin oxide, which is a transparent material that can increase light transmittance, thereby increasing the light passing through the under-screen camera area 20 Strong.
  • the array substrate 1 located in the under-screen camera area 20 includes a glass substrate 11, an interlayer insulating layer 12 and a flat organic layer 13.
  • the interlayer insulating layer 12 is disposed on the glass substrate 11; the flat organic layer 13 is disposed on the interlayer insulating layer 12, and the pixel definition layer 2 is disposed on the flat organic layer 13.
  • the cathode wiring 5 is arranged on the pixel definition layer 2 in a straight, wavy, arc or S-line shape, that is, the cathode wiring 5 is arranged on the The pixel definition layer 2 faces away from the surface of the array substrate 1.
  • the difference between the schematic plan views of the organic light emitting device 100 shown in FIGS. 3 and 4 is that the cathode wiring 5 in FIG. 3 is a plurality of straight lines, and the cathode wiring 5 in FIG. 4 is one Wavy line shape. It is only necessary to keep the cathode located in the under-screen camera area 20, that is, the cathode wiring 5, and connect the plurality of sub-pixels 4 in any shape.
  • the groove 21 includes at least one red sub-pixel groove 211, at least one green sub-pixel groove 212, and at least one blue sub-pixel groove 213;
  • the sub-pixel 4 includes at least one red sub-pixel 41.
  • At least one green sub-pixel 42 and at least one blue sub-pixel 43 are correspondingly disposed in the red sub-pixel groove 211, the green sub-pixel groove 212, and the blue sub-pixel groove 213, respectively.
  • the red sub-pixel 41, the green sub-pixel 42 and the blue sub-pixel 43 are prepared by inkjet printing.
  • the sub-pixels 4 are spaced and arranged in an array in the camera area 20 under the screen.
  • the sub-pixels 4 are arranged in a rhombus shape, that is, the grooves 21 are also arranged in a rhombus shape.
  • the area of the green sub-pixel 42 is smaller than the area of the blue sub-pixel 43, and the area of the red sub-pixel 41 is between the area of the green sub-pixel 42 and the area of the blue sub-pixel 43.
  • the area of the green sub-pixel groove 212 is smaller than the area of the blue sub-pixel groove 213, and the area of the red sub-pixel groove 211 is between the area of the green sub-pixel groove 212 and the area of the blue sub-pixel groove 212. Between the area of the pixel groove 213.
  • the organic light-emitting device 100 further includes a thin-film encapsulation layer 6 disposed on the cathode wiring 5. More specifically, the thin film encapsulation layer 6 covers the organic light emitting device 100.
  • the thin film encapsulation layer 6 includes an inorganic water blocking layer or a buffer layer and a stack structure of the two.
  • another embodiment of the present invention also provides a display device 200, including the above-mentioned organic light-emitting device 100 and a sensor 30, wherein the sensor 30 is located under the organic light-emitting device 100, so The camera area 20 under the screen is set corresponding to the position of the sensor 30.
  • the senor 30 includes one or a combination of a camera sensor, a breathing light sensor, a distance sensor, a fingerprint scanner sensor, a microphone sensor, or a transparent antenna sensor.
  • the display device 200 of the present invention can be applied to various occasions and can be combined with various devices and structures.
  • the display device 200 can be either a mobile terminal (mobile phone, smart wearable) or a fixed terminal (PC), or a display Functional other devices, such as tablets, televisions, display windows, etc. It should be understood that, in order to realize functions, the display device 200 of the present invention has other devices, structures, etc. that are not shown in this specification.
  • the light transmittance of the under-screen camera area 20 is increased, thereby increasing the penetration through the screen.
  • the light intensity of the lower camera area 20 enhances the photosensitivity of the sensor 30 of the lower camera area 20, which is preferably a camera sensor, that is, the lower camera.
  • another embodiment of the present invention also provides a manufacturing method of an organic light emitting device 100, including steps S1-S5:
  • Step S1 Fabricate the array substrate 1;
  • Step S2 fabricating a pixel defining layer 2 on the array substrate 1, and fabricating a plurality of grooves on the pixel defining layer 2;
  • Step S3 forming an anode layer 3 on the pixel definition layer 2;
  • Step S4 forming a plurality of sub-pixels 4 on the anode layer 3 in the corresponding groove.
  • the sub-pixel 4 includes a light-emitting layer 7 and a cathode layer 8; the light-emitting layer 7 is provided on the anode layer 3 in the corresponding groove 21; the cathode layer 8 is provided on the light-emitting layer 7 and The upper surface of the light-emitting layer 7 is completely covered.
  • the sub-pixel 4 includes at least one red sub-pixel 41, at least one green sub-pixel 42 and at least one blue sub-pixel 43. The red sub-pixel 41, the green sub-pixel 42 and the blue sub-pixel 43 pass through Prepared by inkjet printing.
  • Step S5 Making at least one cathode wiring 5 on the pixel defining layer 2, the cathode wiring 5 is connected to a plurality of the sub-pixels 4 in series, and both ends of the cathode wiring 5 are extended and connected to the display Zone 10 of the cathode layer 8.
  • the cathode wiring 5 has a linear shape, a wave shape, an arc shape or an S-line shape.
  • the manufacturing method of the organic light emitting device 100 further includes:
  • Step S6 forming a thin film packaging layer 6 on the cathode wiring 5.
  • the thin film encapsulation layer 6 is formed by alternate deposition of an inorganic water blocking layer and a buffered layer.
  • the material of the inorganic water blocking layer can be SiNx, SiOx, SiOxNy, AlOx, HfOx, TiOx, etc., and can be deposited by atomic layer deposition (ALD) , Laser pulse deposition (PLD) process, sputtering (Sputter) process, plasma enhanced chemical vapor deposition (PECVD) process and other methods;
  • the material of the organic buffer layer can be Acrylate, Epoxy resin, Hexamethyl disilicate (HMDSO), aglycone (Alucone), polystyrene (Polystyrene), etc., can be prepared by inkjet printing (IJP), plasma enhanced chemical vapor deposition (PECVD) and other processes.
  • the thin film encapsulation layer 6 is
  • step S1 specifically includes the steps:
  • Step S11 Provide a glass substrate 11;
  • Step S12 forming an interlayer insulating layer 12 on the glass substrate 11;
  • Step S13 forming a flat organic layer 13 on the interlayer insulating layer 12.
  • the manufacturing of the sub-pixel 4 includes the steps:
  • Step S41 forming a light-emitting layer 7 on the anode layer 3 in the corresponding groove 21;
  • Step S42 forming a cathode layer 8 on the light-emitting layer 7, the cathode layer 8 completely covers the upper surface of the light-emitting layer 7; the cathode layer 8 is electrically connected to the cathode wiring 5.
  • the cathode layer 8 and the cathode wiring 5 are located in the same layer and are electrically connected, and the materials of the two are the same, so they can be fabricated and patterned at the same time, and are integrated.
  • the technical effect of the present invention is to provide an organic light-emitting device, a display device, and a manufacturing method of an organic light-emitting device.

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Abstract

一种有机发光器件(100)、显示装置(200)及有机发光器件(100)的制作方法。有机发光器件(100)设有显示区(10)和屏下摄像头区(20);屏下摄像头区(20)包括阵列基板(1)、像素定义层(2)、阳极层(3)、多个子像素(4)以及至少一阴极走线(5);阴极走线(5)设于像素定义层(2)上串联连接多个子像素(4)。显示装置(200)包括有机发光器件(100)以及传感器(30),对应传感器(30)的位置相应设置了摄像头区(20)。

Description

有机发光器件、显示装置及有机发光器件的制作方法 技术领域
本发明涉及显示领域,尤其涉及一种有机发光器件、显示装置及有机发光器件的制作方法。
背景技术
有机发光二极管(OLED)具有自发光性、响应速度快、广视角等特点,应用前景广阔。目前,OLED 显示屏正在向高屏占比发展,流海屏、水滴屏以及全屏即使用屏下摄像头的技术应运而生。
屏下摄像头(Camera under panel,CUP)由于通过特殊的设计可达到显示的功能,达到100%的屏占比,所以应用前景更为广泛。由于像素定义层(PDL)、阳极层(anode)以及阴极层(cathode)的透光率很差,使得在屏下摄像头区的可见光的透光率较低,严重影响了穿过屏下摄像头区的光强。
技术问题
本发明的目的在于,提供一种有机发光器件、显示装置及有机发光器件的制作方法,解决了屏下摄像头(CUP)区的透光率较低的技术问题,提高了穿过所述屏下摄像头区的光强,增强了所述屏下摄像头区屏下摄像头的感光能力。
技术解决方案
为了解决上述问题,本发明提供一种有机发光器件,设有显示区和屏下摄像头区;所述屏下摄像头区包括阵列基板、像素定义层、阳极层、多个子像素以及至少一阴极走线;所述像素定义层设于所述阵列基板上,开设有多个凹槽;所述阳极层设于所述凹槽内;多个所述子像素设于相对应的凹槽内的所述阳极层上;所述阴极走线设于所述像素定义层上并串联连接多个所述子像素,所述阴极走线的两端延伸并电性连接至位于所述显示区的阴极层。
进一步地,所述阴极走线呈直线形、波浪线形、弧线形或S线形。
进一步地,所述子像素包括发光层和阴极层;所述发光层设于相对应的凹槽内的所述阳极层上;所述阴极层设于所述发光层上且完全覆盖所述发光层的上表面;所述阴极层与所述阴极走线电连接。
进一步地,所述子像素包括至少一红色子像素、至少一绿色子像素和至少一蓝色子像素。
进一步地,所述有机发光器件还包括薄膜封装层,设于所述阴极走线上。
本发明还提供一种显示装置,包括以上所述有机发光器件以及传感器,其中,所述屏下摄像头区对应所述传感器的位置设置。
进一步地,所述传感器包括摄像头传感器、呼吸灯传感器、距离传感器、指纹扫描仪传感器、麦克风传感器或透明天线传感器中的一种或其组合。
本发明还提供一种有机发光器件的制作方法,包括以下步骤:
在所述阵列基板上制作像素定义层,并在所述像素定义层上制作多个凹槽;
在所述像素定义层上制作阳极层;
在相对应的凹槽内的所述阳极层上制作多个子像素;以及
在所述像素定义层上制作至少一阴极走线,所述阴极走线串联连接多个所述子像素,所述阴极走线的两端延伸连接至所述显示区的阴极层。
进一步地,所述有机发光器件的制作方法还包括步骤:在所述阴极走线上制作薄膜封装层。
进一步地,所述制作子像素包括步骤:
在相对应的凹槽内的所述阳极层上制作发光层;以及
在所述发光层上制作阴极层,所述阴极层且完全覆盖所述发光层的上表面;所述阴极层与所述阴极走线电连接。
有益效果
本发明的有益效果在于,提供一种有机发光器件、显示装置及有机发光器件的制作方法,通过将位于屏下摄像头区的阴极层替换为阴极走线,提高了所述屏下摄像头区的透光率,从而提高了穿过所述屏下摄像头区的光强,增强了所述屏下摄像头区屏下摄像头的感光能力。
附图说明
图1为本发明的实施例中一种有机发光器件的剖面结构示意图;
图2为图1的局部放大图;
图3为本发明的实施例中一种有机发光器件的平面结构示意图;
图4为本发明的实施例中另一种有机发光器件的平面结构示意图;
图5为本发明的实施例中一种显示装置的剖面结构示意图;
图6为本发明的实施例中一种有机发光器件的制作方法的流程图;
图7为图6中制作阵列基板的流程图;
图8为图6中制作子像素的流程图。
图中部件标识如下:
1、阵列基板,2、像素定义层,3、阳极层,4、子像素,
5、阴极走线,6、薄膜封装层,7、发光层,8、阴极层,
10、显示区,20、屏下摄像头区,30、传感器,11、玻璃基板,
12、层间绝缘层,13、平坦有机层,21、凹槽,41、红色子像素,
42、绿色子像素,43、蓝色子像素,100、有机发光器件,
101、阴极层,200、显示装置,211、红色子像素凹槽,
212、绿色子像素凹槽,213、蓝色子像素凹槽。
本发明的实施方式
以下各实施例的说明是参考附加的图示,用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语,例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等,仅是参考附加图式的方向。因此,使用的方向用语是用以说明及理解本发明,而非用以限制本发明。在图中,结构相似的单元是用以相同标号表示。
在附图中,为了清楚,层和区域的厚度被夸大。例如,为了便于描述,附图中的元件的厚度和尺寸被任意地示出,因此,所描述的技术范围不由附图限定。
在本发明中,除非另有明确的规定和限定,术语“安装”、“相连”、“连接”、“固定”等术语应做广义理解,例如,可以是固定连接,也可以是可拆卸连接,或成一体;可以是机械连接,也可以是电连接;可以是直接相连,也可以通过中间媒介间接相连,可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言,可以根据具体情况理解上述术语在本发明中的具体含义。
请参阅图1-图4所示,本发明的第一实施例中提供一种有机发光器件100,其设有显示区10和屏下摄像头区20。所述屏下摄像头区20为圆形、矩形或多边形。所述屏下摄像头区20包括阵列基板1、像素定义层2、阳极层3、多个子像素4以及至少一阴极走线5;具体地,所述像素定义层2设于所述阵列基板1上,其开设有多个凹槽21;所述阳极层3设于所述凹槽21的底部;多个所述子像素4设于凹槽21内相应的所述阳极层3之上;所述阴极走线5设于所述像素定义层2上并串联连接多个所述子像素4,所述阴极走线5的两端延伸连接至位于所述显示区10的阴极层8。所述阴极层8与所述阴极走线5位于同一层且电连接。
请参阅图2所示,为图1的局部放大图,所述子像素4包括发光层7和所述阴极层8;所述发光层7设于相对应的凹槽21内的所述阳极层3上;所述阴极层8设于所述发光层7上且完全覆盖所述发光层7的上表面,即所述发光层7和所述阴极层8均呈菱形设置;所述阴极层8与所述阴极走线5电连接。可以理解的是,所述阴极层8与所述阴极走线5可一体成型,两者的材质相同,均包括氧化铟锡,为透明材质,可提高透光率,从而提高穿过所述屏下摄像头区20的光强。
请参阅图3所示,所述阵列基板1为薄膜晶体管基板,薄膜晶体管(未图示)位于所述显示区10,通过位于所述显示区10的阴极层8电连接所述屏下摄像头区20的阴极走线5,从而实现对多个所述子像素4的显示控制,进而实现在所述屏下摄像头区20显示画面的同时最大限度的提高透光率,从而提高穿过所述屏下摄像头区20的光强。
所述阳极层3、所述阴极走线5、所述阴极层8的材质均包括氧化铟锡,其为透明材质,可提高透光率,从而提高穿过所述屏下摄像头区20的光强。
本实施例中,位于所述屏下摄像头区20的所述阵列基板1包括玻璃基板11、层间绝缘层12和平坦有机层13。所述层间绝缘层12设于所述玻璃基板11上;所述平坦有机层13设于所述层间绝缘层12上,其中所述像素定义层2设于所述平坦有机层13上。
请参阅图3、图4所示,所述阴极走线5呈直线形、波浪线形、弧线形或S线形设于所述像素定义层2上,即所述阴极走线5设于所述像素定义层2背离所述阵列基板1一侧的表面。图3、图4所示的所述有机发光器件100的平面结构示意图的区别在于,在图3中所述阴极走线5为多条直线形,在图4中所述阴极走线5为一条波浪线形。只要保留位于所述屏下摄像头区20的阴极,即所述阴极走线5,并且使其以任意形状将多个所述子像素4连接起来即可。
本实施例中,所述凹槽21包括至少一红色子像素凹槽211、至少一绿色子像素凹槽212和至少一蓝色子像素凹槽213;所述子像素4包括至少一红色子像素41、至少一绿色子像素42和至少一蓝色子像素43,分别对应设置于所述红色子像素凹槽211、绿色子像素凹槽212和蓝色子像素凹槽213内。所述红色子像素41、所述绿色子像素42和所述蓝色子像素43通过喷墨打印方式制备。
所述子像素4在所述屏下摄像头区20间隔设置呈阵列排布。所述子像素4呈菱形设置,即所述凹槽21也呈菱形设置。所述绿色子像素42的面积小于所述蓝色子像素43的面积,所述红色子像素41的面积介于所述绿色子像素42的面积和所述蓝色子像素43的面积之间。相应的,所述绿色子像素凹槽212的面积小于蓝色子像素凹槽213的面积,所述红色子像素凹槽211的面积介于所述绿色子像素凹槽212的面积和蓝色子像素凹槽213的面积之间。
本实施例中,所述有机发光器件100还包括薄膜封装层6,设于所述阴极走线5上。更具体的,所述薄膜封装层6覆盖所述有机发光器件100。所述薄膜封装层6包括无机阻水层或有缓冲机层以及两者的堆栈结构。
请参阅图5所示,本发明又一实施例还提供一种显示装置200,包括以上所述有机发光器件100以及传感器30,其中,所述传感器30位于所述有机发光器件100的下方,所述屏下摄像头区20对应所述传感器30的位置设置。
本实施例中,所述传感器30包括摄像头传感器、呼吸灯传感器、距离传感器、指纹扫描仪传感器、麦克风传感器或透明天线传感器中的一种或其组合。
本发明的显示装置200可适用于各种场合,可与各种器件、结构相结合,显示装置200既可以是移动终端(手机、智能穿戴)或者固定终端(PC),也可为带有显示功能的其他设备,例如平板电脑、电视机、显示橱窗等。应该理解,为了实现功能,本发明的显示装置200带有在本说明书中未示出的其他器件、结构等。
本发明的显示装置200通过将位于所述屏下摄像头区20的阴极层替换为所述阴极走线5,提高了所述屏下摄像头区20的透光率,从而提高了穿过所述屏下摄像头区20的光强,增强了所述屏下摄像头区20的所述传感器30优选摄像头传感器,即屏下摄像头的感光能力。
请参阅图6所示,本发明再一实施例还提供一种有机发光器件100的制作方法,包括步骤S1-S5:
步骤S1:制作阵列基板1;
步骤S2:在所述阵列基板1上制作像素定义层2,并在所述像素定义层2上制作多个凹槽;
步骤S3:在所述像素定义层2上制作阳极层3;
步骤S4:在相对应的凹槽内的所述阳极层3上制作多个子像素4。所述子像素4包括发光层7和阴极层8;所述发光层7设于相对应的凹槽21内的所述阳极层3上;所述阴极层8设于所述发光层7上且完全覆盖所述发光层7的上表面。所述子像素4包括至少一红色子像素41、至少一绿色子像素42和至少一蓝色子像素43,所述红色子像素41、所述绿色子像素42和所述蓝色子像素43通过喷墨打印方式制备。
步骤S5:在所述像素定义层2上制作至少一阴极走线5,所述阴极走线5串联连接多个所述子像素4,所述阴极走线5的两端延伸连接至所述显示区10的阴极层8。所述阴极走线5呈直线形、波浪线形、弧线形或S线形。
请参阅图6所示,本实施例中,所述有机发光器件100的制作方法还包括:
步骤S6:在所述阴极走线5上制作薄膜封装层6。所述薄膜封装层6由无机阻水层和有缓冲机层交替沉积形成,无机阻水层的材料可为SiNx、SiOx、SiOxNy、AlOx、HfOx、TiOx等,可通过原子层沉积(ALD)工艺、激光脉冲沉积(PLD)工艺、溅射(Sputter)工艺、等离子增强化学气相沉积(PECVD)工艺等方式形成;有机缓冲层的材料可为丙烯酸酯(Acrylate)、环氧树脂(Epoxy resin)、六甲基二硅醚(HMDSO)、糖苷配基(Alucone)、聚苯乙烯(Polystyrene)等,可通过喷墨打印(IJP)、等离子体增强化学气相淀积(PECVD)等工艺制备等。所述薄膜封装层6用于阻隔水氧,以提高所述有机发光器件的使用寿命。
请参阅图7所示,本实施例中,其中步骤S1所述制作阵列基板1具体包括步骤:
步骤S11:提供一玻璃基板11;
步骤S12:在所述玻璃基板11上制作层间绝缘层12;以及
步骤S13:在所述层间绝缘层12上制作平坦有机层13。
请参阅图8所示,本实施例中,所述制作子像素4包括步骤:
步骤S41:在相对应的凹槽21内的所述阳极层3上制作发光层7;以及
步骤S42:在所述发光层7上制作阴极层8,所述阴极层8且完全覆盖所述发光层7的上表面;所述阴极层8与所述阴极走线5电连接。
其中,所述阴极层8与所述阴极走线5位于同一层且电连接,两者材料相同,因此可以同时制作并图形化形成,并且一体化设置。
本发明的技术效果在于,提供一种有机发光器件、显示装置及有机发光器件的制作方法,通过将位于所述屏下摄像头区的阴极层替换为所述阴极走线,提高了所述屏下摄像头区的透光率,从而提高了穿过所述屏下摄像头区的光强,增强了所述屏下摄像头区屏下摄像头的感光能力。
以上所述仅是本发明的优选实施方式,应当指出,对于本技术领域的普通技术人员,在不脱离本发明原理的前提下,还可以做出若干改进和润饰,这些改进和润饰也应视为本发明的保护范围。

Claims (10)

  1. 一种有机发光器件,其设有显示区和屏下摄像头区;
    所述屏下摄像头区包括:
    阵列基板;
    像素定义层,设于所述阵列基板上,开设有多个凹槽;
    阳极层,设于所述凹槽内;
    多个子像素,设于相对应的凹槽内的所述阳极层上;以及
    至少一阴极走线,设于所述像素定义层上并串联连接多个所述子像素,所述阴极走线的两端延伸并电性连接至位于所述显示区的阴极层。
  2. 根据权利要求1所述的有机发光器件,其中,所述阴极走线呈直线形、波浪线形、弧线形或S线形。
  3. 根据权利要求1所述的有机发光器件,其中,所述子像素包括:
    发光层,设于相对应的凹槽内的所述阳极层上;以及
    所述阴极层,设于所述发光层上且完全覆盖所述发光层的上表面;所述阴极层与所述阴极走线电连接。
  4. 根据权利要求1所述的有机发光器件,其中,所述子像素包括至少一红色子像素、至少一绿色子像素和至少一蓝色子像素。
  5. 根据权利要求1所述的有机发光器件,其中,还包括薄膜封装层,设于所述阴极走线上。
  6. 一种显示装置,其包括如权利要求1所述的有机发光器件以及传感器,其中,所述屏下摄像头区对应所述传感器的位置设置。
  7. 根据权利要求6所述的显示装置,其中,所述传感器包括摄像头传感器、呼吸灯传感器、距离传感器、指纹扫描仪传感器、麦克风传感器或透明天线传感器中的一种或其组合。
  8. 一种有机发光器件的制作方法,其包括步骤:
    制作阵列基板;
    在所述阵列基板上制作像素定义层,并在所述像素定义层上制作多个凹槽;
    在所述像素定义层上制作阳极层;
    在相对应的凹槽内的所述阳极层上制作多个子像素;以及
    在所述像素定义层上制作至少一阴极走线,所述阴极走线串联连接多个所述子像素,所述阴极走线的两端延伸连接至所述显示区的阴极层。
  9. 根据权利要求8所述的有机发光器件的制作方法,其还包括:
    在所述阴极走线上制作薄膜封装层。
  10. 根据权利要求8所述的有机发光器件的制作方法,其中,所述制作子像素包括步骤:
    在相对应的凹槽内的所述阳极层上制作发光层;以及
    在所述发光层上制作阴极层,所述阴极层且完全覆盖所述发光层的上表面;所述阴极层与所述阴极走线电连接。
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