WO2020124914A1 - 柔性显示基板及其制作方法 - Google Patents

柔性显示基板及其制作方法 Download PDF

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Publication number
WO2020124914A1
WO2020124914A1 PCT/CN2019/083991 CN2019083991W WO2020124914A1 WO 2020124914 A1 WO2020124914 A1 WO 2020124914A1 CN 2019083991 W CN2019083991 W CN 2019083991W WO 2020124914 A1 WO2020124914 A1 WO 2020124914A1
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Prior art keywords
layer
flexible display
forming
organic
display substrate
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PCT/CN2019/083991
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English (en)
French (fr)
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郑颖
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武汉华星光电半导体显示技术有限公司
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Priority to US16/481,527 priority Critical patent/US11251410B2/en
Publication of WO2020124914A1 publication Critical patent/WO2020124914A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • H01L27/1244—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits for preventing breakage, peeling or short circuiting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/124—Insulating layers formed between TFT elements and OLED elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/80—Manufacture or treatment specially adapted for the organic devices covered by this subclass using temporary substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • H10K77/111—Flexible substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/311—Flexible OLED
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the invention relates to the field of flexible displays, in particular to a flexible display substrate and a manufacturing method thereof.
  • Flexible display such as flexible active matrix organic light-emitting diode (flexible organic light-emitting diode (FOLED), which has the advantages of self-luminous display, fast response speed, high brightness, wide viewing angle, etc. It can be curled and folded, so compared to traditional hard screen displays, flexible displays have light weight, It is small in size, easy to carry, and has a very broad application prospect.
  • flexible active matrix organic light-emitting diode flexible organic light-emitting diode (FOLED)
  • FOLED flexible organic light-emitting diode
  • the flexible display panel is often bent in the outer foot binding area (pad bending).
  • pad bending there are a large number of inorganic layers and metal lines on the flexible substrate, and the reduction of the bending radius will cause a large concentration of stress, resulting in the cracking of the inorganic film layer of the display panel and the breaking of the metal traces, resulting in display
  • the electrical signals in the panel cannot be conducted smoothly.
  • the thickness of the flexible substrate accounts for the vast majority of the thickness of all the film layers, which results in a sharp increase in bending stress and increases the probability of the inorganic layer and metal line breaking above.
  • the present invention provides a flexible display substrate that performs certain patterning on the external foot binding area, that is, a plurality of grooves are provided in the bending area to effectively reduce the stress in the bending area,
  • the damage resistance of the flexible display substrate is improved when bending, and the inorganic layer is prevented from cracking and metal wire breaking.
  • the technical solution to the above problem is to provide a flexible display substrate with a bending area and a display area, the flexible display substrate including a first organic layer; a first groove extending from one side of the first organic layer To the inside of the first organic layer; the first groove corresponds to the bending region; the middle layer covers the side of the first organic layer away from the first groove; the second organic layer covers On the intermediate layer; a second groove, corresponding to the bending region, extends from the side of the second organic layer away from the first groove to the inside of the second organic layer, the The two sides of the second groove are convex portions; the buffer layer covers the second organic layer, wherein, in the bending area, the buffer layer covers the convex portion; the data line, Covering the buffer layer and corresponding to the bending area.
  • the flexible display substrate further includes an active layer provided on the buffer layer, the active layer has a source area and a drain area; the gate is insulated A layer covering the active layer and the buffer layer; a gate provided on the gate insulating layer; an interlayer dielectric layer covering the gate and the gate insulating layer; contact A hole penetrating from the interlayer dielectric layer to the active layer, and one of the contact holes corresponds to a source region, and the other of the contact holes corresponds to the drain region; source and drain An electrode provided on the interlayer dielectric layer, the source electrode is connected to the source region from the corresponding contact hole, and the drain electrode is connected to the drain region from the corresponding contact hole; A flat layer covers the source electrode, the drain electrode, and the interlayer dielectric layer; an organic light-emitting layer is provided on the flat layer; and an encapsulation layer is provided on the organic light-emitting layer.
  • the flexible display substrate in the bending area, further includes a metal protection layer covering the data line.
  • the viscosity of the materials used for the first organic layer and the second organic layer is 3000-5000 cps, and the thickness of the first organic layer or the second organic layer is 6 ⁇ m-10 ⁇ m.
  • the thickness of the first organic layer is less than or equal to the thickness of the second organic layer.
  • the depth of the first groove and the second groove are both 1 ⁇ m-4 ⁇ m; the first groove corresponds to the second groove.
  • the material of the intermediate layer is one of silicon oxide, silicon nitride, a composite material of silicon oxide and silicon nitride, and aluminum oxide, and the thickness of the intermediate layer is 450nm-550nm .
  • the invention also provides a method for manufacturing a flexible display substrate, comprising the steps of: providing a carrier substrate; forming an inorganic layer on the carrier substrate, and etching the entire inorganic layer in the bending region Several grooves; in the display area, all the inorganic layers are removed; a first organic layer is formed on the carrier substrate and the first organic layer fills and covers all the grooves; an intermediate layer is formed on the On the first organic layer; forming a second organic layer on the intermediate layer, in the bending area, etching a second extending from the surface of the second organic layer to the interior of the second organic layer At the same time, corresponding protrusions are formed on both sides of the second groove; a buffer layer is formed on the second organic layer, and the buffer layer covers the protrusions in the bending region Forming a data line on the buffer layer and corresponding to the bending area; peeling off the carrier substrate and the inorganic layer from the first organic layer, while corresponding to the first organic layer
  • the area between the grooves
  • the following steps are further included: forming an active layer on the buffer layer
  • the active layer has a source region and a drain region; forming a gate insulating layer on the active layer and the buffer layer; forming a gate on the gate insulating layer; forming an interlayer dielectric A layer on the gate and the gate insulating layer; a contact hole is formed from the interlayer dielectric layer to the active layer, and one of the contact holes corresponds to the source region, and the other One of the contact holes corresponds to the drain region; a source electrode and a drain electrode are formed on the interlayer dielectric layer, the source electrode is connected to the source region from the corresponding contact hole, the drain The electrode is connected to the drain region from the corresponding contact hole, wherein the step of forming the data line is synchronized with the step of forming the source and drain; forming a flat layer on the source, the drain
  • a metal protection layer is formed on the data line in the bending region.
  • the beneficial effects of the present invention are: the flexible display substrate of the present invention and the manufacturing method thereof, by performing corresponding patterning treatment on both the first organic layer and the second organic layer, a certain arrangement of grooves is formed so that The gate, source and drain and multiple conductive wirings on the flexible substrate are effective in reducing the stress in the bending area when bending, improving the damage resistance of the flexible display when bending, and avoiding the occurrence of cracks in the inorganic layer and the breakage of the metal line.
  • the bending resistance of the flexible display substrate is effectively improved, and the reliability and life of the flexible display device are improved.
  • FIG. 1 is a structural diagram when an inorganic layer is formed in the manufacturing process of a flexible display substrate according to an embodiment of the present invention.
  • FIG. 2 is a structural diagram of a flexible organic substrate according to an embodiment of the present invention when a first organic layer is formed.
  • FIG. 3 is a structural diagram when an intermediate layer is formed during the manufacturing process of a flexible display substrate according to an embodiment of the present invention.
  • FIG. 4 is a structural diagram when a second organic layer is formed during the manufacturing process of a flexible display substrate according to an embodiment of the present invention.
  • FIG. 5 is a structural diagram when a second groove is formed during the manufacturing process of a flexible display substrate according to an embodiment of the present invention.
  • FIG. 6 is a structural diagram of the flexible display substrate according to an embodiment of the present invention when a buffer layer is formed.
  • FIG. 7 is a structural diagram of a flexible display substrate according to an embodiment of the present invention when a contact hole is formed.
  • FIG. 8 is a structural diagram of forming a source and a drain and a data line during the manufacturing process of a flexible display substrate according to an embodiment of the invention.
  • FIG. 9 is a structural diagram when a flat layer and a metal protective layer are formed during the manufacturing process of the flexible display substrate of the embodiment of the present invention.
  • FIG. 10 is a structural diagram of a flexible display substrate according to an embodiment of the invention.
  • 210a, 210b first organic layer 300 middle layer;
  • 1000a flat layer 1000b metal protective layer;
  • the flexible display substrate 1 of the present invention is provided with a bending area 20 and a display area 10.
  • the bending area 20 is also referred to as the external foot binding area of the flexible display substrate 1.
  • the flexible display substrate 1 includes first organic layers 210a, 210b, an intermediate layer 300, second organic layers 220a, 220b, and buffer layers 400a, 400b in this order from bottom to top.
  • the intermediate layer 300 covers the first organic layers 210a, 210b, the second organic layers 220a, 220b cover the intermediate layer 300, and the buffer layers 400a, 400b cover the second organic layer On layers 220a, 220b.
  • the viscosity of the materials used for the first organic layer 210a, 210b and the second organic layer 220a, 220b is 3000-5000cps, and the thickness of the first organic layer 210a, 210b and the second organic layer 220a, 220b are both 6 ⁇ m -10 ⁇ m, in this embodiment, the thickness of the first organic layer 210 a, 210 b is less than or equal to the thickness of the second organic layer 220 a, 220 b.
  • the material used for the intermediate layer 300 is one of silicon oxide, silicon nitride, a composite material of silicon oxide and silicon nitride, and aluminum oxide.
  • the thickness of the intermediate layer 300 is 450 nm-550 nm, preferably 500 nm.
  • the material of the buffer layers 400a and 400b is one of silicon oxide, silicon nitride, a composite material of silicon oxide and silicon nitride, and aluminum oxide.
  • the thickness of the intermediate layer 300 is 450nm-550nm, preferably 500nm .
  • the flexible display substrate 1 further includes a plurality of first grooves 211, a plurality of second grooves 221, data lines 900, and a metal protection layer 1000b.
  • the first groove 211 is formed on one surface of the first organic layer 210b. That is, the first groove 211 extends from the one surface of the first organic layer 210b to the inside of the first organic layer 210b.
  • the first groove 211 corresponds to the bending region 20.
  • the intermediate layer 300 covers the other surface of the first organic layer 210b.
  • the second groove 221 also corresponds to the bending region 20 and is formed on one surface of the second organic layer 220b away from the first groove 211.
  • the second groove 221 extends from the one surface of the second organic layer 220b away from the first groove 211 to the inside of the second organic layer 220b.
  • the first groove 211 corresponds to the second groove 221.
  • a protrusion 222 is formed on both sides of the second groove 221.
  • the buffer layer 400b covers the convex portion 222;
  • the data line 900 covers the buffer layer 400b and corresponds to the bending area 20.
  • the metal protection layer 1000b is overlaid on the data line 900.
  • the data line 900 may be a source-drain trace.
  • the depths of the first groove 211 and the second groove 221 are both 1 ⁇ m-4 ⁇ m.
  • the flexible display substrate 1 further includes an active layer 500, a gate insulating layer 600, a gate 700, an interlayer dielectric layer 800, a source electrode 910, and a drain
  • the active layer 500 is disposed on the buffer layer 400a, the active layer 500 has a source region 501 and a drain region 502;
  • the gate insulating layer 600 covers the active layer 500 and On the buffer layer 400a;
  • the gate 700 is provided on the gate insulating layer 600;
  • the interlayer dielectric layer 800 covers the gate 700 and the gate insulating layer 600;
  • the contact A hole 930 penetrates from the interlayer dielectric layer 800 to the active layer 500, and one of the contact holes 930 corresponds to the source region 501, and the other of the contact holes 930 corresponds to the drain region 502;
  • the source 910 and the drain 920 are provided on the interlayer dielectric layer 800, the source 910 is connected to the source region 501 from the corresponding contact hole 930, the drain 920 is from The corresponding contact hole 930 is connected to the drain region 502;
  • the flat layer 1000a overlies the source electrode 910, the drain electrode 920, and the interlayer dielectric layer 800;
  • the invention also provides a method for manufacturing the flexible display substrate 1, including the following steps:
  • a carrier substrate 100 is provided.
  • An inorganic layer 110 is formed on the carrier substrate 100, and a plurality of grooves 111 penetrating the inorganic layer 110 are etched in the bending region 20; in the display region 10, the inorganic layer 110 is removed.
  • the inorganic layer 110 is formed on the carrier substrate 100 by a vapor deposition method.
  • the material of the inorganic layer 110 may be silicon oxide or silicon nitride, and the thickness is 1 ⁇ m-4 ⁇ m.
  • the groove 111 is etched on the inorganic layer 110, and the number and density of the groove 111 are set according to actual needs.
  • the inorganic layer 110 located in the display area 10 is removed by etching.
  • the shape of the groove 111 may be a rectangular parallelepiped or a stepped shape, and of course, other shapes.
  • first organic layers 210 a and 210 b are formed on the carrier substrate 100 and the first organic layer 210 b fills and covers all the grooves 111.
  • a plurality of first grooves 211 corresponding to the bending region 20 are formed on one surface of the first organic layer 210b (see FIG. 10).
  • the material used for the first organic layers 210a and 210b is polyimide, and its viscosity is 3000-5000cps.
  • the polyimide is coated on the carrier substrate 100 and the first organic layer 210b fills and covers all the grooves 111.
  • the thickness of the first organic layers 210a, 210b is 6 ⁇ m to 10 ⁇ m.
  • an intermediate layer 300 is formed on the other surfaces of the first organic layers 210a and 210b.
  • the material used for the intermediate layer 300 is one of silicon oxide, silicon nitride, a composite material of silicon oxide and silicon nitride, and aluminum oxide.
  • the first organic layer is formed by vapor deposition
  • the intermediate layer 300 is formed on 210a and 210b, and has a thickness of 450nm-550nm, preferably 500nm.
  • second organic layers 220a and 220b are formed on the intermediate layer 300, and a plurality of surfaces from the second organic layer 220b are etched in the bending region 20
  • the second groove 221 extends to the inside of the second organic layer 220b, and corresponding protrusions 222 are formed on both sides of the second groove 221.
  • the material used for the second organic layers 220a and 220b is polyimide, and its viscosity is 3000-5000cps.
  • the polyimide is coated on the intermediate layer 300, and the thickness of the second organic layers 220a and 220b formed by the polyimide is 6 ⁇ m to 10 ⁇ m.
  • second grooves 221 are etched on the second organic layer 220b of the bending region 20 by etching, the second grooves 221 have a depth of 1-4 ⁇ m, wherein On both sides of the second groove 221, corresponding protrusions 222 are formed.
  • the thickness of the first organic layer 210a, 210b is less than or equal to that of the second organic layer 220a, 220b.
  • the second organic layer 220a is 6 ⁇ m
  • the thickness of 220b is 6 ⁇ m or more than 6 ⁇ m; as another example, the thickness of the first organic layers 210 a and 210 b is 10 ⁇ m, and the thickness of the second organic layers 220 a and 220 b can only be 10 ⁇ m.
  • buffer layers 400 a and 400 b are formed on the second organic layers 220 a and 220 b.
  • the buffer layer 400 b covers the protrusion 222.
  • the material of the buffer layers 400a and 400b is one of silicon oxide, silicon nitride, a composite material of silicon oxide and silicon nitride, and aluminum oxide.
  • the thickness of the intermediate layer 300 is 450nm-550nm, preferably 500nm .
  • the buffer layers 400a and 400b are formed on the second organic layers 220a and 220b by a deposition method. In the bending region 20, the buffer layer 400b is only deposited on the protrusions On 222, it is not deposited in the second groove 221.
  • an active layer 500 is formed on the buffer layer 400 a.
  • the active layer 500 has a source region 501 and a drain region 502.
  • the excimer laser process is used to change the deposited amorphous silicon layer into polysilicon, and the active layer 500 is formed by photoresist coating, exposure, development, etching, stripping, etc.
  • the specific manufacturing process of the active layer 500 has not been improved in the present invention, and the active layer 500 is formed according to actual needs by using corresponding common technologies, which will not be repeated one by one.
  • a gate insulating layer 600 is formed on the active layer 500 and the buffer layer 400a.
  • a vapor deposition method may be used to deposit a silicon oxide layer on the active layer 500 and the buffer layer 400a as the gate insulating layer 600.
  • a gate 700 is formed on the gate insulating layer 600.
  • a method such as sputtering and evaporation may be used to form a metal layer of the gate 700 on the gate insulating layer 600, and pattern the metal layer of the gate 700 to form the gate 700.
  • An interlayer dielectric layer 800 is formed on the gate 700 and the gate insulating layer 600.
  • a method such as chemical vapor deposition may be used to deposit the interlayer dielectric layer 800 on the gate 700 and the gate insulating layer 600.
  • a contact hole 930 penetrating from the interlayer dielectric layer 800 to the active layer 500 to leak out a corresponding region of the active layer 500, and one of the contact holes 930 corresponds to the source region 501, The other contact hole 930 corresponds to the drain region 502.
  • a source electrode 910 and a drain electrode 920 are formed on the interlayer dielectric layer 800 and a data line 900 is formed on the buffer layer 400b and corresponds to the bending region 20; the source electrode 910
  • the corresponding contact hole 930 is connected to the source region 501, and the drain 920 is connected to the drain region 502 from the corresponding contact hole 930.
  • the drain 920 and the source 910 are formed in the display area 10 by sputtering and evaporation, and the data line 900 is formed in the bending area 20 at the same time.
  • the source electrode 910, the drain electrode 920, and the data line 900 may use the same film-forming process to form a conductive film, and perform a one-time patterning process on the conductive film to form the source electrode 910, the The pattern of the drain 920 and the pattern of the data line 900.
  • a flat layer 1000 a is formed on the source electrode 910, the drain electrode 920 and the interlayer dielectric layer 800, and a metal protection layer 1000 b is formed on the data line 900.
  • the flat layer 1000a covers the source electrode 910, the drain electrode 920, and the data line 900.
  • the flat layer 1000a helps to reduce or eliminate the step difference caused by the device layers on the flexible display substrate 1, and provides a relatively flat surface for the device layer to be formed later.
  • An organic light emitting layer 2000 is formed on the flat layer 1000a.
  • An encapsulation layer 3000 is formed on the organic light-emitting layer 2000.
  • the carrier substrate 100 and the inorganic layer 110 are peeled from the first organic layers 210a and 210b, and the first organic layer 210b corresponds to the area between the grooves 111 The first groove 211 is formed.
  • the carrier substrate 100 and the inorganic layer 110 are peeled from the first organic layers 210a and 210b by a laser peeling method to obtain the flexible display substrate 1 of the present invention.

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  • Electroluminescent Light Sources (AREA)

Abstract

一种柔性显示基板及其制作方法，柔性显示基板(1)设有弯折区(20)和显示区(10)，柔性显示基板(1)包括第一有机层(210a、210b)、多个形成于所述第一有机层(210a、210b)的其中一表面上的第一凹槽(211)、覆于所述第一有机层(210a、210b)的另一表面上的中间层(300)、覆于所述中间层(300)上的第二有机层(220a、220b)、形成于所述第二有机层(220a、220b)的远离所述第一凹槽(211)的其中一表面上的第二凹槽(221)、覆盖所述第二有机层(220a、220b)的所述其中一表面上的缓冲层(400a、400b)、以及覆于所述缓冲层(400a、400b)上的数据线(900)。该柔性显示基板及其制作方法，有效较少弯折区域的应力，提高柔性显示器弯折时抗损伤能力，避免无机层发生裂痕及金属线断裂。

Description

柔性显示基板及其制作方法 技术领域
本发明涉及柔性显示器领域，具体为一种柔性显示基板及其制作方法。
 背景技术
随着科技的不断发展，显示技术也一直在持续更新。显示器的未来需求也逐渐朝着更加便捷、时尚，适用环境更为广泛。采用柔性基板制成的柔性器件有望成为下一代光电子器件的主流设备。柔性显示，如柔性有源矩阵有机发光二极体（flexible organic light-emitting diode，FOLED），具有自发光显示、响应速度快、亮度高、视角宽等优点，它可以被卷曲、折叠，因此，相比于传统的硬屏显示器，柔性显示器具有重量轻、体积小，携带便捷，具有十分广阔的应用前景。
柔性显示面板为了实现更小的边界和高屏占比，常会使用在外脚绑定区域进行弯折（pad bending）。但在进行弯折时，在柔性基板上存在大量的无机层和金属线，弯折半径的减少会出现应力的大量集中，导致显示面板的无机膜层开裂已经金属走线断裂的情况，导致显示面板中的电信号无法顺利传导。对于弯折（pad bending）区域的所有膜层而言，柔性基板的厚度占了所有膜层厚度的绝大部分，这就导致了弯折应力急剧增大，增加了上面无机层及金属线断裂的概率。
 技术问题
为了解决上述技术问题：本发明提供一种柔性显示基板，其通过对外脚绑定区域进行一定的图案化，即在弯折区设置有多个凹槽，以有效较少弯折区域的应力，提高柔性显示基板弯折时的抗损伤能力，避免无机层发生裂痕及金属线断裂。
 技术解决方案
解决上述问题的技术方案是：提供一种柔性显示基板，设有弯折区和显示区，所述柔性显示基板包括第一有机层；第一凹槽，从所述第一有机层的一面延伸至所述第一有机层的内部；所述第一凹槽对应所述弯折区；中间层，覆于所述第一有机层远离所述第一凹槽的一面；第二有机层，覆于所述中间层上；第二凹槽，对应于所述弯折区，从所述第二有机层的远离所述第一凹槽的一面延伸至所述第二有机层的内部，所述第二凹槽的两侧为凸起部；缓冲层，覆于所述第二有机层上，其中，在所述弯折区，所述缓冲层覆于所述凸起部上；数据线，覆于所述缓冲层上且对应于所述弯折区。
在本发明一实施例中，在所述显示区，所述柔性显示基板还包括有源层，设于所述缓冲层上，所述有源层具有源极区和漏极区；栅极绝缘层，覆于所述有源层以及所述缓冲层上；栅极，设于所述栅极绝缘层上；层间电介质层，覆于所述栅极和所述栅极绝缘层上；接触孔，从所述层间电介质层贯穿至所述有源层上，且其中一所述接触孔对应于源极区，其中另一所述接触孔对应于所述漏极区；源极和漏极，设于所述层间电介质层上，所述源极从对应的所述接触孔连接至所述源极区，所述漏极从对应的所述接触孔连接至所述漏极区；平坦层，覆于所述源极、所述漏极以及所述层间电介质层上；有机发光层，设于所述平坦层上；封装层，设于所述有机发光层上。
在本发明一实施例中，在所述弯折区，所述柔性显示基板还包括金属保护层，覆于所述数据线上。
在本发明一实施例中，所述第一有机层和第二有机层所用材料的粘度为3000-5000cps，所述第一有机层或所述第二有机层的厚度均为6μm -10μm。
在本发明一实施例中，所述第一有机层的厚度小于或等于所述第二有机层的厚度。
在本发明一实施例中，所述第一凹槽和所述第二凹槽的深度均为1μm -4μm；所述第一凹槽对应于所述第二凹槽。
在本发明一实施例中，所述中间层的所用材料为氧化硅、氮化硅、氧化硅和氮化硅的复合材料、氧化铝中的一种，所述中间层的厚度为450nm-550nm。
本发明还提供了一种柔性显示基板的制作方法，包括以下步骤：提供一承载基底；形成无机层于所述承载基底上，在所述弯折区，刻蚀出贯穿整个所述无机层的若干凹槽；在所述显示区，去除全部所述无机层；形成第一有机层于所述承载基底上且所述第一有机层填充并覆盖所有所述凹槽；形成中间层于所述第一有机层上；形成第二有机层于所述中间层上，在所述弯折区，刻蚀出从所述第二有机层的表面延伸至所述第二有机层的内部的第二凹槽，同时所述第二凹槽的两侧形成对应的凸起部；形成缓冲层于所述第二有机层上，在所述弯折区，所述缓冲层覆于所述凸起部上；形成数据线于所述缓冲层上且对应于所述弯折区；将所述承载基底、所述无机层从所述第一有机层上剥离，同时在所述第一有机层对应所述凹槽之间的区域形成第一凹槽。
在本发明一实施例中，在形成缓冲层步骤与将所述承载基底、所述无机层从所述第一有机层上剥离步骤之间还包括以下步骤：形成有源层于所述缓冲层上，所述有源层具有源极区和漏极区；形成栅极绝缘层于所述有源层以及所述缓冲层上；形成栅极于所述栅极绝缘层上；形成层间电介质层于所述栅极和所述栅极绝缘层上；形成接触孔，从所述层间电介质层贯穿至所述有源层上，且其中一所述接触孔对应于源极区，其中另一所述接触孔对应于所述漏极区；形成源极和漏极于所述层间电介质层上，所述源极从对应的所述接触孔连接至所述源极区，所述漏极从对应的所述接触孔连接至所述漏极区，其中，形成数据线步骤与形成源极和漏极步骤同步进行；形成平坦层于所述源极、所述漏极以及所述层间电介质层上；形成有机发光层于所述平坦层上；形成封装层于所述有机发光层上。
在本发明一实施例中，在形成平坦层步骤过程中，包括在弯折区，形成金属保护层于所述数据线上。
 有益效果
本发明的有益效果是：本发明的柔性显示基板及其制作方法，通过在第一有机层和第二有机层上均进行相应的图案化处理，形成一定排布的凹槽，使得设置在所述柔性基板上的栅极、源漏极和多条导电布线在弯折时，有效较少弯折区域的应力，提高柔性显示器弯折时抗损伤能力，避免无机层发生裂痕及金属线断裂，有效的改善了柔性显示基板的抗弯折效果，提高柔性显示装置的可靠性和寿命。
 附图说明
为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
下面结合附图和实施例对本发明作进一步解释。
图1是本发明实施例的柔性显示基板制作过程中形成无机层时的结构图。
图2是本发明实施例的柔性显示基板制作过程中形成第一有机层时的结构图。
图3是本发明实施例的柔性显示基板制作过程中形成中间层时的结构图。
图4是本发明实施例的柔性显示基板制作过程中形成第二有机层时的结构图。
图5是本发明实施例的柔性显示基板制作过程中形成第二凹槽时的结构图。
图6是本发明实施例的柔性显示基板制作过程中形成缓冲层时的结构图。
图7是本发明实施例的柔性显示基板制作过程中形成接触孔时的结构图。
图8是本发明实施例的柔性显示基板制作过程中形成源极和漏极以及数据线时的结构图。
图9是本发明实施例的柔性显示基板制作过程中形成平坦层和金属保护层时的结构图。
图10是本发明实施例的柔性显示基板的结构图。
以上附图标记为：
1柔性显示基板；
10显示区；                      20弯折区；
100 承载基底；                  110 无机层；
210a、210b第一有机层；          300 中间层；
220a、220b第二有机层；          400a、400b缓冲层；
500有源层；                     600栅极绝缘层；
700栅极；                       800层间电介质层；
900数据线；                     910源极；
920漏极；                       930接触孔；
1000a平坦层；                   1000b金属保护层；
2000 有机发光层；                3000封装层；
111凹槽；                       211第一凹槽；
221第二凹槽；                   222凸起部；
501源极区；                     502漏极区。
 本发明的实施方式
下面详细描述本发明的实施方式，所述实施方式的示例在附图中示出，其中自始至终相同或类似的标号表示相同或类似的元件或具有相同或类似功能的元件。下面通过参考附图描述的实施方式是示例性的，仅用于解释本发明，而不能理解为对本发明的限制。
以下实施例的说明是参考附加的图式，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如「上」、「下」、「前」、「后」、「左」、「右」、「顶」、「底」等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。
请同时参照图4、图10，在其一实施例中，本发明的柔性显示基板1，设有弯折区20和显示区10。其中所述弯折区20又被称为所述柔性显示基板1的外脚绑定区域。所述柔性显示基板1从下至上依次包括第一有机层210a、210b、中间层300、第二有机层220a、220b、以及缓冲层400a、400b。所述中间层300覆于所述第一有机层210a、210b上，所述第二有机层220a、220b覆于所述中间层300上，所述缓冲层400a、400b覆于所述第二有机层220a、220b上。
所述第一有机层210a、210b和第二有机层220a、220b所用材料的粘度为3000-5000cps，所述第一有机层210a、210b和所述第二有机层220a、220b的厚度均为6μm -10μm，本实施例中，所述第一有机层210a、210b的厚度小于或等于所述第二有机层220a、220b的厚度。
所述中间层300的所用材料为氧化硅、氮化硅、氧化硅和氮化硅的复合材料、氧化铝中的一种，所述中间层300的厚度为450nm-550nm，优选为500nm。
所述缓冲层400a、400b的所用材料为氧化硅、氮化硅、氧化硅和氮化硅的复合材料、氧化铝中的一种，所述中间层300的厚度为450nm-550nm，优选为500nm。
请同时参照图5、图10，在所述弯折区20，所述柔性显示基板1还包括多个第一凹槽211、多个第二凹槽221、数据线900以及金属保护层1000b。其中，所述第一凹槽211形成于所述第一有机层210b的其中一表面上。亦即，所述第一凹槽211是从所述第一有机层210b的所述其中一表面延伸至所述第一有机层210b的内部。所述第一凹槽211对应所述弯折区20。所述中间层300覆于所述第一有机层210b的另一表面上。所述第二凹槽221也对应于所述弯折区20，并形成于所述第二有机层220b的远离所述第一凹槽211的其中一表面上。亦即，所述第二凹槽221是从所述第二有机层220b的远离所述第一凹槽211的所述其中一表面延伸至所述第二有机层220b的内部。所述第一凹槽211对应于所述第二凹槽221。在所述第二有机层220b中，所述第二凹槽221的两侧均形成一凸起部222。在所述弯折区20，所述缓冲层400b覆于所述凸起部222上；所述数据线900覆于所述缓冲层400b上且对应于所述弯折区20。所述金属保护层1000b覆于所述数据线900上，本实施例中，所示数据线900可为源漏极走线。所述第一凹槽211和所述第二凹槽221的深度均为1μm -4μm。
如图7至图10所示，在所述显示区10，所述柔性显示基板1还包括有源层500、栅极绝缘层600、栅极700、层间电介质层800、源极910和漏极920、接触孔930、平坦层1000a、有机发光层2000以及封装层3000。其中，所述有源层500设于所述缓冲层400a上，所述有源层500具有源极区501和漏极区502；所述栅极绝缘层600覆于所述有源层500以及所述缓冲层400a上；所述栅极700设于所述栅极绝缘层600上；所述层间电介质层800覆于所述栅极700和所述栅极绝缘层600上；所述接触孔930从所述层间电介质层800贯穿至所述有源层500上，且其中一所述接触孔930对应于源极区501，其中另一所述接触孔930对应于所述漏极区502；所述源极910和漏极920设于所述层间电介质层800上，所述源极910从对应的所述接触孔930连接至所述源极区501，所述漏极920从对应的所述接触孔930连接至所述漏极区502；所述平坦层1000a覆于所述源极910、所述漏极920以及所述层间电介质层800上；所述有机发光层2000设于所述平坦层1000a上；所述封装层3000设于所述有机发光层2000上。
本发明还提供了一种柔性显示基板1的制作方法，包括以下步骤：
如图1所示，提供一承载基底100。形成一无机层110于所述承载基底100上，在所述弯折区20，刻蚀出贯穿所述无机层110的若干凹槽111；在所述显示区10，去除所述无机层110。具体的，采用气相沉积的方法在所述承载基底100上形成所述无机层110，所述无机层110所用材料可以选择氧化硅或者氮化硅，厚度为1μm -4μm。之后，在所述弯折区20，在所述无机层110上，刻蚀出所述凹槽111，所述凹槽111的数量和密度根据实际需要设置。此外，利用刻蚀的方式去除位于所述显示区10内的所述无机层110，所述凹槽111的形状可以是长方体或者台阶形，当然还可以是其他形状。
如图2所示，形成第一有机层210a、210b于所述承载基底100上且所述第一有机层210b填充并覆盖所有所述凹槽111。此时，在所述第一有机层210b的其中一表面上就会形成多个与所述弯折区20相对应的第一凹槽211（见图10）。本实施例中，所述第一有机层210a、210b所用材料选择聚酰亚胺，将其粘度为3000-5000cps。在实际制作过程中，将所述聚酰亚胺涂覆在所述承载基底100上且所述第一有机层210b填充并覆盖所有所述凹槽111，所述聚酰亚胺形成的所述第一有机层210a、210b的厚度为6μm -10μm。
如图3所示，形成中间层300于所述第一有机层210a、210b的另一表面上。所述中间层300所用材料为氧化硅、氮化硅、氧化硅和氮化硅的复合材料、氧化铝中的一种，在实际制作过程中，通过气相沉积法，在所述第一有机层210a、210b上形成所述中间层300，其厚度为450nm-550nm，优选为500nm。
如图4、图5所示，形成第二有机层220a、220b于所述中间层300上，在所述弯折区20，刻蚀出多个从所述第二有机层220b的其中一表面延伸至所述第二有机层220b的内部的第二凹槽221，同时所述第二凹槽221的两侧形成对应的凸起部222。本实施例中，所述第二有机层220a、220b所用材料选择聚酰亚胺，将其粘度为3000-5000cps。在实际制作过程中，将所述聚酰亚胺涂覆在所述中间层300上，所述聚酰亚胺形成的所述第二有机层220a、220b的厚度为6μm -10μm。之后，通过刻蚀法，在所述弯折区20的所述第二有机层220b上刻蚀出一定排布的第二凹槽221，所述第二凹槽221深度为1-4μm，其中，所述第二凹槽221的两侧形成对应的凸起部222。本实施例中，所述第一有机层210a、210b的厚度小于或等于所述第二有机层220a、220b，如所述第一有机层210a、210b的厚度为6μm，那么第二有机层220a、220b的厚度为6μm或者大于6μm；又如所述第一有机层210a、210b的厚度为10μm，所述第二有机层220a、220b的厚度只能是10μm。
如图6所示，形成缓冲层400a、400b于所述第二有机层220a、220b上，在所述弯折区20，所述缓冲层400b覆于所述凸起部222上。所述缓冲层400a、400b的所用材料为氧化硅、氮化硅、氧化硅和氮化硅的复合材料、氧化铝中的一种，所述中间层300的厚度为450nm-550nm，优选为500nm。在实际制作过程中，通过沉积法在所述第二有机层220a、220b上形成所述缓冲层400a、400b，在所述弯折区20，所述缓冲层400b只是沉积在所述凸起部222上，并不沉积在所述第二凹槽221内。
如图7所示，形成有源层500于所述缓冲层400a上，所述有源层500具有源极区501和漏极区502。在实际制作过程中，采用准分子激光工艺将沉积的非晶硅层变成多晶硅，并进行光刻胶涂布、曝光、显影、刻蚀、剥离等工艺形成有源层500，需要说明的是，所述有源层500的具体制作工艺本发明并未作出改进，均根据实际需求，采用对应的常用技术形成有源层500，对此不再一一赘述。
形成栅极绝缘层600于所述有源层500以及所述缓冲层400a上。在实际制作过程中，可采用气相沉积法，在所述有源层500以及所述缓冲层400a上沉积氧化硅层以作为所述栅极绝缘层600。
形成栅极700于所述栅极绝缘层600上。在实际制作过程中，可采用溅射和蒸镀等方法，在所述栅极绝缘层600上形成栅极700金属层，并对该栅极700金属层进行图案化处理，形成所述栅极700。
形成层间电介质层800于所述栅极700和所述栅极绝缘层600上。在实际制作过程中，可采用化学气相沉积等方法，在所述栅极700和所述栅极绝缘层600上沉积所述层间电介质层800。
形成接触孔930，从所述层间电介质层800贯穿至所述有源层500上以使所述有源层500的对应区域漏出，且其中一所述接触孔930对应于源极区501，其中另一所述接触孔930对应于所述漏极区502。
如图8所示，形成源极910和漏极920于所述层间电介质层800上以及形成数据线900于所述缓冲层400b上且对应于所述弯折区20；所述源极910从对应的所述接触孔930连接至所述源极区501，所述漏极920从对应的所述接触孔930连接至所述漏极区502。在实际制作过程中，通过溅射和蒸镀等方法在所述显示区10形成所述漏极920和源极910，同时在所述弯折区20，形成所述数据线900。所述源极910、所述漏极920和所述数据线900可利用同一成膜工艺形成一层导电膜，并且对该导电膜进行一次形图案化处理，形成所述源极910、所述漏极920的图形和所述数据线900的图形。
如图9所示，形成平坦层1000a于所述源极910、所述漏极920以及所述层间电介质层800上，以及形成金属保护层1000b于所述数据线900上。所述平坦层1000a覆盖所述源极910、所述漏极920和所述数据线900。所述平坦层1000a有助于减少或消除所述柔性显示基板1上由各器件层造成的段差，而为后续形成的器件层提供相对平整的表面。
形成有机发光层2000于所述平坦层1000a上。
形成封装层3000于所述有机发光层2000上。
如图10所示，将所述承载基底100、所述无机层110从所述第一有机层210a、210b上剥离，同时在所述第一有机层210b对应所述凹槽111之间的区域形成第一凹槽211。在实际制作过程中，采用激光剥离的方法将所述承载基底100、所述无机层110从所述第一有机层210a、210b上剥离，即可得到本发明的柔性显示基板1。
以上仅为本发明的较佳实施例而已，并不用以限制本发明，凡在本发明的精神和原则之内所作的任何修改、等同替换和改进等，均应包含在本发明的保护范围之内。

Claims (10)

  1. 一种柔性显示基板，设有弯折区和显示区，其中，所述柔性显示基板包括
    第一有机层；
    多个第一凹槽，形成于所述第一有机层的其中一表面；所述第一凹槽对应所述弯折区；
    中间层，覆于所述第一有机层的另一表面；
    第二有机层，覆于所述中间层上；
    多个第二凹槽，形成于所述第二有机层的远离所述第一凹槽的其中一表面，所述第二凹槽的两侧均形成有一凸起部，所述第二凹槽对应所述弯折区；
    缓冲层，覆于所述第二有机层的所述其中一表面上，其中，在所述弯折区，所述缓冲层覆于所述凸起部上；以及
    数据线，覆于所述缓冲层上且对应于所述弯折区。
  2. 根据权利要求1所述的柔性显示基板，其中，在所述显示区，所述柔性显示基板还包括
    有源层，设于所述缓冲层上，所述有源层具有源极区和漏极区；
    栅极绝缘层，覆于所述有源层以及所述缓冲层上；
    栅极，设于所述栅极绝缘层上；
    层间电介质层，覆于所述栅极和所述栅极绝缘层上；
    接触孔，从所述层间电介质层贯穿至所述有源层上，且其中一所述接触孔对应于源极区，其中另一所述接触孔对应于所述漏极区；
    源极和漏极，设于所述层间电介质层上，所述源极从对应的所述接触孔连接至所述源极区，所述漏极从对应的所述接触孔连接至所述漏极区；
    平坦层，覆于所述源极、所述漏极以及所述层间电介质层上；
    有机发光层，设于所述平坦层上；以及
    封装层，设于所述有机发光层上。
  3. 根据权利要求1所述的柔性显示基板，其中，在所述弯折区，所述柔性显示基板还包括金属保护层，覆于所述数据线上。
  4. 根据权利要求1所述的柔性显示基板，其中，所述第一有机层和第二有机层所用材料的粘度为3000 cps -5000cps，所述第一有机层和所述第二有机层的厚度均为6μm -10μm。
  5. 根据权利要求1所述的柔性显示基板，其中，所述第一有机层的厚度小于或等于所述第二有机层的厚度。
  6. 根据权利要求1所述的柔性显示基板，其中，所述第一凹槽和所述第二凹槽的深度均为1μm -4μm；所述第一凹槽对应于所述第二凹槽。
  7. 根据权利要求1所述的柔性显示基板，其中，所述中间层的所用材料为氧化硅、氮化硅、氧化硅和氮化硅的复合材料、氧化铝中的一种，所述中间层的厚度为450nm-550nm。
  8. 一种柔性显示基板的制作方法，其包括以下步骤：
    提供一承载基底；
    形成无机层于所述承载基底上，在所述弯折区，刻蚀出贯穿所述无机层的若干凹槽；在所述显示区，去除所述无机层；
    形成第一有机层于所述承载基底上且所述第一有机层填充并覆盖所述凹槽；
    形成中间层于所述第一有机层上；
    形成第二有机层于所述中间层上，在所述弯折区，刻蚀出多个从所述第二有机层的表面延伸至所述第二有机层的内部的第二凹槽，同时所述第二凹槽的两侧均形成对应的凸起部；
    形成缓冲层于所述第二有机层上，在所述弯折区，所述缓冲层覆于所述凸起部上；
    形成数据线于所述缓冲层上且对应于所述弯折区；以及
    将所述承载基底和所述无机层从所述第一有机层上剥离，从而在所述第一有机层对应所述凹槽之间的区域形成第一凹槽。
  9. 根据权利要求8所述的柔性显示基板的制作方法，其中，在形成缓冲层的步骤与将所述承载基底和所述无机层从所述第一有机层上剥离的步骤之间还包括以下步骤：
    形成有源层于所述缓冲层上，所述有源层具有源极区和漏极区；
    形成栅极绝缘层于所述有源层以及所述缓冲层上；
    形成栅极于所述栅极绝缘层上；
    形成层间电介质层于所述栅极和所述栅极绝缘层上；
    形成接触孔，从所述层间电介质层贯穿至所述有源层上，且其中一所述接触孔对应于源极区，其中另一所述接触孔对应于所述漏极区；
    形成源极和漏极于所述层间电介质层上，所述源极从对应的所述接触孔连接至所述源极区，所述漏极从对应的所述接触孔连接至所述漏极区，其中，形成数据线步骤与形成源极和漏极步骤同步进行；
    形成平坦层于所述源极、所述漏极以及所述层间电介质层上；
    形成有机发光层于所述平坦层上；以及
    形成封装层于所述有机发光层上。
  10. 根据权利要求9所述的柔性显示基板的制作方法，其中，在形成平坦层的步骤过程中，包括
    在弯折区，形成金属保护层于所述数据线上。
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