WO2020031944A1 - 半導体発光装置および半導体発光装置の製造方法 - Google Patents

半導体発光装置および半導体発光装置の製造方法 Download PDF

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Publication number
WO2020031944A1
WO2020031944A1 PCT/JP2019/030656 JP2019030656W WO2020031944A1 WO 2020031944 A1 WO2020031944 A1 WO 2020031944A1 JP 2019030656 W JP2019030656 W JP 2019030656W WO 2020031944 A1 WO2020031944 A1 WO 2020031944A1
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Prior art keywords
submount
light emitting
semiconductor light
emitting device
base
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PCT/JP2019/030656
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English (en)
French (fr)
Japanese (ja)
Inventor
克哉 左文字
西川　透
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パナソニックＩｐマネジメント株式会社
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Priority to CN201980048171.2A priority Critical patent/CN112438000B/zh
Priority to JP2020526644A priority patent/JP6902166B2/ja
Priority to EP19846304.4A priority patent/EP3836318A4/en
Publication of WO2020031944A1 publication Critical patent/WO2020031944A1/ja
Priority to US17/170,630 priority patent/US20210159663A1/en

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    • H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP

Definitions

  • the present disclosure relates to a semiconductor light emitting device and a method for manufacturing the semiconductor light emitting device.
  • Semiconductor light-emitting elements such as semiconductor lasers (LDs) and light-emitting diodes (LEDs) are used in many optical systems because of their advantages such as low cost and simple usage.
  • a semiconductor laser having a relatively small optical output is used as a light source for reading and writing signals in an optical disk device or a light source for optical communication in an optical communication system.
  • the application range of semiconductor lasers has been expanding to light sources for illumination and light sources for laser processing devices.
  • the GaN-based semiconductor laser can be used, for example, as a light source for illumination.
  • a white light source that emits white light can be configured by combining a semiconductor laser that emits blue laser light and a phosphor that absorbs blue light and emits yellow fluorescence.
  • the light emitted from the semiconductor laser can form a smaller condensed spot on the phosphor than the light of the light emitting diode. Therefore, by using a semiconductor laser, an illumination light source with high directivity can be realized. For this reason, an illumination light source using a semiconductor laser is suitable for a spotlight requiring a long-distance irradiation or a high beam of an automobile headlamp.
  • a semiconductor laser that emits laser light with high light output generates a lot of heat. Therefore, in order to efficiently transmit the heat generated by the semiconductor laser to the outside, a package structure having the semiconductor laser mounted thereon must be excellent in heat dissipation.
  • a semiconductor laser used as a light source of an automobile headlamp it is important for a semiconductor laser used as a light source of an automobile headlamp to have a package structure that has excellent heat dissipation properties and is robust against a temperature cycle in a wide temperature range.
  • FIG. 30 shows a package structure of the optical semiconductor device disclosed in Patent Document 1.
  • an optical semiconductor device chip 1010 disclosed in Patent Document 1 is connected to a submount 1020 via AuSn solder 1041.
  • the submount 1020 is connected to a metal heat dissipation block 1030 via AuSn solder 1042.
  • a stripe-shaped groove 1028 is formed on the surface of the submount 1020 on the side connected to the heat radiation block 1030.
  • the submount 1020 and the heat dissipation block 1030 are joined by AuSn solder 1042 so as not to fill the groove 1028.
  • a cavity 1029 is formed in the groove 1028, so that the AuSn solder 1042 and the submount 1020 are elastically deformed around the cavity 1029.
  • thermal strain generated between the submount 1020 and the heat dissipation block 1030 can be reduced.
  • FIG. 31 shows a package structure of a light emitting diode module disclosed in Patent Document 2.
  • a plurality of LED chips 2010 are connected to a wiring board 2020.
  • the wiring board 2020 is connected to the heat dissipation board 2030 via the bonding material 2042.
  • a support member 2050 is disposed between the wiring board 2020 and the heat dissipation board 2030 in addition to the bonding material 2042.
  • a material of the support material 2050 a resin material or a metal bump is used.
  • FIG. 32 shows the package structure of the light emitting device disclosed in Patent Document 3.
  • a ceramic substrate 3020 on which a plurality of light emitting elements 3010 are mounted is connected to a mounting substrate 3030 via a plurality of metal bumps 3040. Resin is embedded between the plurality of metal bumps 3040.
  • Patent Documents 1 to 3 it is difficult to realize a package structure that is excellent in heat dissipation and robust against temperature cycles.
  • the wiring board 2020 and the heat dissipation board 2030 are connected without any gap by the bonding material 2042, so that a heat dissipation area is secured.
  • the thickness of the resin or the metal bump used as the support material 2050 is usually several tens of ⁇ m, so that it is inevitably about the same as the thickness of the bonding material 2042. Further, simply increasing the thickness of the bonding material 2042 also increases the thermal resistance. Further, it is assumed that the resin and the metal bump are deformed by the pressure for bonding, and it is also difficult to control the thickness of the support material 2050 with high accuracy.
  • the present disclosure has been made in order to solve such a problem, and while suppressing an increase in thermal resistance, a semiconductor light emitting device and a semiconductor light emitting device having sufficient strength against thermal strain accompanying a temperature cycle. It is intended to provide a manufacturing method.
  • a first semiconductor light emitting device includes a base, a submount located on the base, and a semiconductor light emitting element located on the submount.
  • the semiconductor light emitting element and the submount are joined with a first joining material
  • the base and the submount are joined with a second joining material
  • a spacer is provided on the base side of the submount.
  • One embodiment of the second semiconductor light emitting device includes a base, a submount located on the base, and having a submount body, and a semiconductor light emitting element located on the submount.
  • the semiconductor light emitting device and the submount are joined with a first joining material, the base and the submount are joined with a second joining material, and the semiconductor light emitting device has power consumption, light output, Is a semiconductor laser that operates in a state where the difference between the two is not less than 3 W, and a decrease in optical output at an operating current If after a temperature cycle test in which a temperature cycle between 125 ° C. and ⁇ 40 ° C. is repeated 1000 times is caused by the temperature cycle.
  • the area of the base side of the main surface of the submount body is a 0.6 mm 2 or more, the thickness of the first bonding material Is smaller than 3 ⁇ m, the average thickness of the second bonding material is d [m], the temperature change width guaranteed in the semiconductor light emitting device is ⁇ T [K], and the thermal expansion coefficient of the submount body is ⁇ .
  • a third semiconductor light emitting device includes a base, a submount positioned on the base, and a semiconductor light emitting element positioned on the submount.
  • the submount is joined with a first joining material
  • the base and the submount are joined with a second joining material
  • a gold layer or a layer containing gold is 1 ⁇ m or more on the outermost surface of the base.
  • the semiconductor light emitting device is a semiconductor laser that operates in a state where the difference between the power consumption and the optical output is 3 W or more, and the average thickness of the second bonding material is d [m].
  • the temperature change width guaranteed in the semiconductor light emitting device is ⁇ T [K]
  • the thermal expansion coefficient of the base material of the submount is ⁇ sub [K ⁇ 1 ]
  • the thermal expansion coefficient of the base is ⁇ stem [K ⁇ 1 ]
  • the second The rigidity of the bonding material is Z [GPa]
  • the width of the submount is W [m]
  • the length of the submount is L [m]
  • the crack generation critical constant of the second bonding material is C When [GN / m], the following (Equation 1) and (Equation 2) are satisfied.
  • a fourth semiconductor light emitting device is a submount having a first main surface and a second main surface facing the first main surface, and a first mount of the submount.
  • a semiconductor light emitting element located on the main surface side of the submount, the submount and the semiconductor light emitting element are joined by a first bonding material, and a spacer is provided on the second main surface side of the submount. There is a first region arranged and a second region where the spacer is not arranged.
  • One embodiment of a method for manufacturing a semiconductor light emitting device is a method for manufacturing a semiconductor light emitting device including a submount having a submount body and a base, wherein the submount body has a semiconductor light emitting element mounted thereon. And a second main surface facing the first main surface, wherein the second main surface of the submount body is a first main surface on which a spacer is disposed. And a second region in which the spacer is not disposed, wherein the method for manufacturing the semiconductor light emitting device includes the step of: Disposing the submount on the base body and cooling the molten bonding material to fix the submount to the base body.
  • FIG. 1 is a diagram showing a configuration of a semiconductor light emitting device of a TO-CAN package type.
  • FIG. 2 is a sectional view of a semiconductor light emitting device of the TO-CAN package type.
  • FIG. 3 is a diagram showing current-light output characteristics of the semiconductor light emitting device before and after a temperature cycle test performed according to the reliability test standard AEC-Q102.
  • FIG. 4 is a diagram showing the structure of a semiconductor light emitting device subjected to a temperature cycle test according to the reliability test standard AEC-Q102.
  • FIG. 5 is a diagram showing the relationship between the thermal resistance and the thermal capacity of the semiconductor light emitting device before and after the temperature cycle test performed according to the reliability test standard AEC-Q102.
  • FIG. 1 is a diagram showing a configuration of a semiconductor light emitting device of a TO-CAN package type.
  • FIG. 2 is a sectional view of a semiconductor light emitting device of the TO-CAN package type.
  • FIG. 3 is a diagram showing current
  • FIG. 6A is a cross-sectional SEM image of the periphery of the second bonding material of the semiconductor light emitting device before the temperature cycle test performed according to the reliability test standard AEC-Q102.
  • FIG. 6B is a cross-sectional SEM image of the periphery of the second bonding material of the semiconductor light emitting device after the temperature cycle test performed according to the reliability test standard AEC-Q102.
  • FIG. 7 is a view showing the structure of a semiconductor light emitting device subjected to a temperature cycle test according to the reliability test standard AEC-Q102
  • FIG. 7A is a cross-sectional view of the semiconductor light emitting device when viewed from the front.
  • FIG. 8 is a diagram showing the relationship between the second bonding material and the left side C of (Equation 1) in the semiconductor light emitting device subjected to the temperature cycle test according to the reliability test standard AEC-Q102.
  • FIG. 9 is a cross-sectional view illustrating a configuration of the semiconductor light emitting device according to the first embodiment.
  • FIG. 10 is a bottom view of the submount in the semiconductor light emitting device according to the first embodiment.
  • FIG. 11 is a diagram illustrating a first mounting mode (junction down mounting) of the semiconductor laser in the semiconductor light emitting device according to the first embodiment.
  • FIG. 12 is a diagram illustrating a second mounting mode (junction-up mounting) of the semiconductor laser in the semiconductor light emitting device according to the first embodiment.
  • FIG. 13 is a bottom view of another example of the submount in the semiconductor light emitting device according to the first embodiment.
  • FIG. 14 is a diagram illustrating a method for manufacturing the semiconductor light emitting device of the comparative example.
  • FIG. 15A is a diagram showing a state when a semiconductor laser is mounted on a submount in the method for manufacturing a semiconductor light emitting device according to the first embodiment.
  • FIG. 15B is a diagram illustrating a state in which the submount on which the semiconductor laser is mounted is mounted on the base in the method for manufacturing the semiconductor light emitting device according to Embodiment 1.
  • FIG. 15C is a diagram showing a state after the submount on which the semiconductor laser is mounted is mounted on the base in the method for manufacturing the semiconductor light emitting device according to Embodiment 1.
  • FIG. 16 is a diagram showing a state in which a semiconductor laser is mounted on a submount using a submount provided with no spacer.
  • FIG. 17 is a diagram showing a state in which a semiconductor laser is mounted on a submount using a submount provided with spacers.
  • FIG. 18 is a diagram showing the effect of the thickness and area of the spacer on the melting of the AuSn solder when the semiconductor laser is mounted on the submount by melting the AuSn solder formed on the submount.
  • FIG. 16 is a diagram showing a state in which a semiconductor laser is mounted on a submount using a submount provided with no spacer.
  • FIG. 17 is a diagram showing a state in which a semiconductor laser is mounted on a submount using a submount provided with spacers.
  • FIG. 18
  • FIG. 19 is a diagram showing a dimensional range of the thickness and area of the spacer for achieving both the ease of melting the AuSn solder and the effect of suppressing the deterioration of the laser characteristics of the semiconductor laser in the chip / submount mounting step.
  • FIG. 20 is a cross-sectional view illustrating a configuration of a semiconductor light emitting device according to a modification of the first embodiment.
  • FIG. 21 is a bottom view of the submount in the semiconductor light emitting device according to the modification of the first embodiment.
  • FIG. 22 is a bottom view of another first example of the submount in the semiconductor light emitting device according to the modification of the first embodiment.
  • FIG. 23 is a bottom view of another second example of the submount in the semiconductor light emitting device according to the modification of the first embodiment.
  • FIG. 24 is a bottom view of another third example of the submount in the semiconductor light emitting device according to the modification of the first embodiment.
  • FIG. 25 is a bottom view of another fourth example of the submount in the semiconductor light emitting device according to the modification of the first embodiment.
  • FIG. 26 is a sectional view showing a configuration of the semiconductor light emitting device according to the second embodiment.
  • FIG. 27 is a cross-sectional SEM image showing the result of the experiment performed in the second embodiment.
  • FIG. 28 is a diagram showing the relationship between the thickness of the surface layer (Au layer) and the thickness of the second bonding material (finished solder thickness) obtained by the experiment performed in the second embodiment.
  • FIG. 29A is a diagram showing a state when a submount on which a semiconductor laser is mounted is mounted on a base (before heating) in the method for manufacturing a semiconductor light emitting device according to Embodiment 2.
  • FIG. 29B is a diagram showing a state when the submount on which the semiconductor laser is mounted is mounted on the base (at the time of heating) in the method for manufacturing the semiconductor light emitting device according to the second embodiment.
  • FIG. 29C is a diagram illustrating a state in which the submount on which the semiconductor laser is mounted is mounted on the base (at the time of continuing heating and pressing) in the method of manufacturing the semiconductor light emitting device according to Embodiment 1.
  • FIG. 30 is a diagram illustrating a package structure of the optical semiconductor device disclosed in Patent Document 1.
  • FIG. 31 is a diagram illustrating a package structure of a light emitting diode module disclosed in Patent Document 2.
  • FIG. 32 is a diagram illustrating a package structure of the light emitting device disclosed in Patent Document 3.
  • FIG. 1 is a diagram showing a configuration of a semiconductor light emitting device 100 of a TO-CAN package type.
  • FIG. 2 is a cross-sectional view of the semiconductor light emitting device 100.
  • the cap 110 is indicated by a broken line.
  • the semiconductor laser 10 is connected and fixed to the submount 20X by a bonding material such as AuSn solder.
  • the semiconductor laser 10 is a GaN-based semiconductor laser made of, for example, a nitride semiconductor material.
  • As the base material of the submount 20X for example, diamond is used.
  • the submount 20X on which the semiconductor laser 10 is mounted is connected and fixed to a metal base (base) 30 by a bonding material such as AuSn solder.
  • the base 30 is a stem with electrode terminals.
  • the base 30 has a stem base 31 and a semi-cylindrical stem post 32 attached to the stem base 31.
  • the submount 20X is fixed to the stem post 32.
  • the stem base 31 is provided with a pair of lead pins 33 as electrode terminals for supplying power to the semiconductor laser 10 from outside.
  • the pair of lead pins 33 is electrically connected to the pair of electrodes of the semiconductor laser 10. Specifically, one of the pair of lead pins 33 and one electrode of the semiconductor laser 10 are connected by a gold wire. Further, the other of the pair of lead pins 33 and a submount connected to the other electrode of the semiconductor laser 10 via a bonding material are connected by a gold wire.
  • a metal cap 110 (can) is attached to the stem base 31.
  • the semiconductor laser 10 and the submount 20X are housed in a cap 110.
  • a glass plate 111 is attached to the cap 110 so that light emitted from the semiconductor laser 10 can be transmitted.
  • the semiconductor light emitting device 100 configured as described above is used as a light source for illumination of an automobile headlamp or the like.
  • the semiconductor laser used for the light source of the automobile headlamp has a wide range from a low temperature to a high temperature. It must operate in a temperature range.
  • the characteristics change even when the temperature rise / fall process (temperature cycle) from ⁇ 40 ° C. to + 125 ° C. is repeated 1,000 times. Is 20% or less. This temperature range is wider than the specifications of information equipment intended for indoor use.
  • the semiconductor light emitting device having the package structure shown in FIGS. 1 and 2 was subjected to a temperature cycle test according to the reliability test standard AEC-Q102 for automobile parts. As shown in FIG. It was found that the light output of the semiconductor light emitting device after the test was lower than that of the semiconductor light emitting device before the temperature cycle test. This is presumably because the optical output decreased due to the increase in the temperature of the semiconductor laser.
  • FIG. 4 is a diagram showing the structure of the semiconductor light emitting device subjected to the temperature cycle test.
  • the semiconductor laser 10 and the submount 20X were joined with the first joining material 41 made of AuSn solder. Further, the submount 20X and the base 30 (stem post 32) were also joined by the second joining material 42 made of AuSn solder.
  • the thermal resistance of the semiconductor light emitting device before and after the temperature cycle test in the heat radiation path from the heat source (laser light generating unit) of the semiconductor laser 10 to the base 30 was measured.
  • the thermal resistances r1, r2, r3, r4, and r5 indicate the thermal resistances of the semiconductor laser 10, the first bonding material 41, the submount 20X, the second bonding material 42, and the base 30, respectively. ing.
  • FIG. 6A is a cross-sectional SEM image of the periphery of the second bonding material 42 before (initial) the temperature cycle test.
  • FIG. 6B is a cross-sectional SEM image of the periphery of the second bonding material 42 after the temperature cycle test (after 500 times).
  • the inventors of the present application have examined the cause of the occurrence of cracks in the second bonding material 42 between the submount 20X and the base 30, and found that the difference in thermal expansion coefficient between the submount 20X and the base 30 was large. As a result, it was found that cracks occurred in the second bonding material 42. This will be described below.
  • a material having high thermal conductivity and electric resistance and having a thermal expansion coefficient relatively close to that of the semiconductor laser is used.
  • a material having high thermal conductivity and electric resistance and having a thermal expansion coefficient relatively close to that of the semiconductor laser is used.
  • diamond, AlN, or SiC is typical as the base material of the submount.
  • the base (stem) to which the submount is joined a metal material which is easy to shape and is relatively inexpensive is used.
  • a metal material which is easy to shape and is relatively inexpensive is used.
  • copper (Cu), iron (Fe), aluminum (Al), or the like is used as a material of the base in the TO-CAN package.
  • the material of the substrate (Cu, Fe, Al, etc.) has a significantly larger coefficient of thermal expansion than the base material of the submount (diamond, AlN, SiC).
  • the thermal resistance of the semiconductor light emitting device a combination of materials having a large difference in thermal expansion coefficient between the submount and the base has to be selected.
  • the joining material can absorb the thermal strain, but if the thermal strain is large, the joining material cannot absorb the thermal strain.
  • the thermal strain when a temperature cycle in which the temperature difference between the high temperature and the low temperature is large is repeated, the difference between the amount of thermal expansion (when the temperature rises) and the amount of thermal shrinkage (when the temperature falls) between the submount and the base increases, and The joining material between the two cannot absorb thermal strain.
  • the joining material such as solder is an alloy material composed of a plurality of metals, Generally, thermal conductivity is low. Therefore, when the bonding material is too thick, the thermal resistance increases.
  • the inventor of the present application conducted a temperature cycle test (1,000 times) using the base material and size of the submount, the thickness of the bonding material (AuSn solder), and the temperature change width as parameters, and experimentally performed the bonding material
  • the critical point at which cracks occur is empirically formulated (modeled).
  • the thickness of the second bonding material 42 is d [m]
  • the temperature change width guaranteed in the semiconductor light emitting device is ⁇ T [K]
  • the submount 20X The thermal expansion coefficient of the base material is ⁇ sub [K ⁇ 1 ]
  • the thermal expansion coefficient of the base 30 is ⁇ stem [K ⁇ 1 ]
  • the rigidity of the second bonding material 42 is Z [GPa]
  • the width of the mount 20X is represented by W [m]
  • the length of the submount 20X is represented by L [m]
  • the crack generation critical constant of the second bonding material 42 as to whether or not the second bonding material 42 is deteriorated.
  • FIG. 8 shows the relationship between the second bonding material 42 and the left side C ⁇ 10 ⁇ 3 [GN / m] based on the experimental results.
  • the points plotted by ⁇ indicate that the laser characteristics did not deteriorate after 1,000 times of the temperature cycle test, and the points plotted by ⁇ indicate the points of 1,000 times.
  • Each of the graphs shows a case in which the laser characteristics are deteriorated after the temperature cycle test.
  • the present inventors have conducted intensive studies. As a result, by appropriately controlling the thickness of the joining material between the submount and the base (stem), while suppressing an increase in thermal resistance, We have obtained the idea that a semiconductor light emitting device having sufficient strength against thermal strain caused by a temperature cycle can be realized. The present disclosure has been made based on such an idea.
  • each drawing is a schematic diagram and is not necessarily strictly illustrated. Therefore, the scale and the like do not always match in each figure.
  • substantially the same components are denoted by the same reference numerals, and redundant description will be omitted or simplified.
  • FIG. 9 is a sectional view showing a configuration of the semiconductor light emitting device 1 according to the first embodiment.
  • FIG. 10 is a bottom view of the submount 20 in the semiconductor light emitting device 1.
  • the semiconductor light emitting device 1 has a semiconductor laser 10 as an example of a semiconductor light emitting element. Like the semiconductor light emitting device shown in FIG. 1 and FIG. It is a semiconductor laser device having a CAN package.
  • the semiconductor light emitting device 1 includes a semiconductor laser 10, a submount 20, and a base 30.
  • the base 30 has a stem base 31 and a stem post 32 (see FIGS. 1 and 2).
  • the semiconductor laser 10 is, for example, a GaN-based semiconductor laser (laser chip) made of a nitride semiconductor material, and emits a blue laser beam having a peak wavelength between 380 nm and 490 nm as an example.
  • the semiconductor laser 10 operates in a state where the difference between the power consumption and the optical output of the semiconductor laser 10 is 3 W or more.
  • the ellipse shown in the semiconductor laser 10 schematically shows the position of the guided light inside the chip during laser oscillation.
  • the semiconductor laser 10 is made so that the injected current is concentrated on this elliptical portion.
  • the ellipse shown in the semiconductor laser 10 is the same in other drawings.
  • the submount 20 is a base on which the semiconductor laser 10 is mounted.
  • the semiconductor laser 10 is located on the submount 20.
  • the submount 20 is located on the base 30. Specifically, the submount 20 is located on the stem post 32 of the base 30. Therefore, the submount 20 is located between the semiconductor laser 10 and the base 30 (stem post 32).
  • the semiconductor laser 10 and the submount 20 are joined by a first joining material 41.
  • the base 30 and the submount 20 are joined by a second joining material 42.
  • the first bonding material 41 and the second bonding material 42 are solder materials such as AnSn solder.
  • the thickness of the first bonding material 41 is smaller than the thickness of the second bonding material 42.
  • the thickness of the first bonding material 41 is preferably smaller than 3 ⁇ m.
  • the thickness of the second bonding material 42 is preferably 3.5 ⁇ m or more, and more preferably 4.5 ⁇ m or more.
  • the semiconductor laser 10 is mounted on the submount 20 via the first bonding material 41.
  • the semiconductor laser 10 may be mounted on the submount 20 by junction-down mounting as shown in FIG. 11, or may be mounted on the submount 20 by junction-up mounting as shown in FIG. It may be.
  • the semiconductor laser 10 includes, for example, an n-type semiconductor layer 12, an active layer 13, and a p-type semiconductor layer 14 having a ridge portion on a semiconductor substrate 11 such as a GaN substrate. It is a formed configuration. On the surface of the p-type semiconductor layer 14, an insulating layer 15 (current blocking layer) made of SiO 2 is formed. Further, a p-side electrode 16 is formed on the ridge portion of the p-type semiconductor layer 14, an n-side electrode 17 is formed on the back surface of the semiconductor substrate 11, and an adhesion auxiliary layer 18 is formed on the insulating layer 15. Have been.
  • the p-side electrode 16 has a two-layer structure of a Pd layer 16a having a thickness of 40 nm and a Pt layer 16b having a thickness of 100 nm in FIG. 11, and a Pd layer 16a having a thickness of 40 nm and a thickness of 35 nm in FIG. And an Au layer 16c having a thickness of 1.6 ⁇ m.
  • the n-side electrode 17 has a three-layer structure including a Ti layer 17a having a thickness of 10 nm, a Pt layer 17b having a thickness of 35 nm, and an Au layer 17c having a thickness of 300 nm. And a Pt layer 17b having a thickness of 35 nm.
  • FIG. 11 the n-side electrode 17 has a three-layer structure including a Ti layer 17a having a thickness of 10 nm, a Pt layer 17b having a thickness of 35 nm, and an Au layer 17c having a thickness of 300 nm.
  • the adhesion auxiliary layer 18 has a two-layer structure of a Ti layer 18a having a thickness of 10 nm and a Pt layer 18b having a thickness of 100 nm, and in FIG. 12, a Ti layer 18a having a thickness of 10 nm and a Pt layer having a thickness of 50 nm. 18b is a two-layer structure. Note that the adhesion auxiliary layer 18 is separated from the insulating layer 15 formed on the side surface of the ridge portion of the p-type semiconductor layer 14.
  • the submount 20 has a submount body 21.
  • the material of the submount body 21 constitutes the base material of the submount 20.
  • the thermal conductivity of the base material (submount body 21) of the submount 20 is preferably 130 W ⁇ m ⁇ 1 ⁇ K ⁇ 1 or more. Further, the thermal expansion coefficient of the base material (submount body 21) of the submount 20 may be 5 ⁇ 10 ⁇ 6 K ⁇ 1 or less.
  • the difference in the coefficient of thermal expansion between the base material of the submount 20 (submount body 21) and the base 30 to which the submount 20 is connected may be greater than 11 ⁇ 10 ⁇ 6 K ⁇ 1 .
  • the submount body 21 is made of, for example, a high heat conductive material such as diamond, SiC or AlN.
  • the submount body 21 is made of diamond. That is, the base material of the submount 20 is diamond.
  • the shape of the submount body 21 is substantially a rectangular parallelepiped. Specifically, the submount main body 21 has a rectangular plate shape.
  • the submount body 21 has a first main surface 21a and a second main surface 21b.
  • the first main surface 21a is a surface on the semiconductor laser 10 side (the surface on which the semiconductor laser 10 is mounted), and the second main surface 21b is a surface facing the first main surface 21a.
  • second main surface 21b is a surface on the side of base 30 (a surface on the side connected to base 30).
  • the area of the second main surface 21b (the surface on the side of the base 30) of the submount body 21 may be 0.6 mm 2 or more.
  • the submount 20 On the base 30 side of the submount 20, there are a first region R1 in which the spacer 22 is disposed and a second region R2 in which the spacer 22 is not disposed.
  • the second main surface 21b of the submount body 21 has a first region R1 and a second region R2. That is, the submount 20 has the spacer 22 in the first region R1 on the second main surface 21b side, and has the spacer 22 in the second region R2 on the second main surface 21b side.
  • the main component of the spacer 22 is, for example, a metal selected from Cu, Al, Au and Ag, or an alloy containing at least one of Cu, Al, Au and Ag.
  • the spacer 22 is made of Cu, and is formed by, for example, a Cu plating method.
  • a first metal film 23 is disposed between the spacer 22 and the second main surface 21b of the submount body 21 in the first region R1.
  • the first metal film 23 is also disposed between the spacer 22 in the second region R2 and the second main surface 21b of the submount body 21.
  • the first metal film 23 is formed on the entire second main surface 21 b of the submount main body 21.
  • the first metal film 23 is a part of the submount 20.
  • the first metal film 23 is used as a negative electrode when the spacer 22 is formed by a plating method.
  • a resist is formed on the surface of the first metal film 23, an opening is formed in a portion of the resist where the spacer 22 is to be formed, plating is performed, and the resist is removed to form a resist on the surface of the first metal film 23.
  • the spacer 22 can be formed. When a plurality of spacers 22 are formed, a plurality of openings may be provided in the resist.
  • the first metal film 23 has a first adhesion layer 23a, a barrier layer 23b, and a deterioration preventing layer 23c.
  • the first adhesion layer 23a, the barrier layer 23b, and the alteration preventing layer 23c are laminated films arranged in this order from the submount main body 21 to the spacer 22.
  • the first adhesion layer 23a is a metal layer having excellent adhesion to the submount main body 21, and is made of, for example, a 0.1 ⁇ m thick Ti layer made of Ti.
  • the barrier layer 23b is a metal layer for preventing the diffusion of Sn, and is composed of, for example, a Pt layer made of Pt having a thickness of 0.2 ⁇ m.
  • the alteration preventing layer 23c is a metal layer for preventing the spacer 22 from altering the surface of the first metal film 23 during the Cu plating process, and is, for example, a 0.5 ⁇ m thick Au layer made of Au.
  • the alteration preventing layer 23c is not formed, when forming the spacer 22, the surface of the first metal film 23 is oxidized to have high resistance, and there is a possibility that a cavity may be formed without local plating. Note that the barrier layer 23b may not be formed in the first metal film 23.
  • the spacer 22 is disposed between the submount body 21 and the base 30.
  • the spacer 22 is provided on the submount main body 21 via the first metal film 23.
  • the spacer 22 is formed on the surface of the first metal film 23 on the alteration preventing layer 23c.
  • the spacer 22 is a part of the submount 20.
  • a plurality of spacers 22 are provided. As shown in FIG. 10, the plurality of spacers 22 are two-dimensionally dispersed. In the present embodiment, a total of four spacers 22 are provided, two in the vertical direction and two in the horizontal direction. Each of the four spacers 22 is arranged near four corners of the submount main body 21. However, each spacer 22 is not arranged at a corner of the submount main body 21 itself. Therefore, the second main surface 21b of the submount body 21 has a corner where the spacer 22 is not arranged.
  • An interval D1 between two adjacent spacers 22 is preferably 100 ⁇ m or more. Further, the side surface of the spacer 22 is preferably separated from the side surface of the submount body 21. In this case, the distance D2 between the side surface of the spacer 22 and the side surface of the submount body 21 is preferably 50 ⁇ m or more. The minimum width D3 of the spacer 22 is preferably 50 ⁇ m or more.
  • the spacer 22 includes a first surface S10 facing the second main surface 21b of the submount main body 21, a second surface S20 opposite to the first surface S10, It has a third surface S30 which is a side surface between the first surface S10 and the second surface S20.
  • the spacer 22 has the second surface S20 and the third surface S30 connected by a first curved surface C1 having an inclination. Therefore, the thickness of the central part of the spacer 22 is larger than the thickness of the peripheral part of the spacer 22.
  • the third surface S30 of the spacer 22 has at least a first side surface S31 and a second side surface S32.
  • third surface S30 of spacer 22 when viewed from the bottom of submount 20, has a curved surface.
  • the shape of the spacer 22 as viewed from the bottom is a long race track shape, and the first side surface S31 and the second side surface S32 are connected by a second curved surface C2.
  • the radius of curvature of the second curved surface C2 is preferably 25 ⁇ m or more.
  • the shape of the spacer 22 as viewed from the bottom may be circular. In this case, the spacer 22 is substantially cylindrical.
  • a second metal film 24 is disposed on the second surface S20 of the spacer 22.
  • the second metal film 24 is also arranged on the third surface S30 of the spacer 22.
  • the second metal film 24 is also arranged in the second region R2 where the spacer 22 is not provided.
  • the second metal film 24 is formed on the entire exposed surface of the first metal film 23 so as to cover the entire second surface S20 and third surface S30 of the spacer 22.
  • the second metal film 24 is a part of the submount 20.
  • the second metal film 24 has a second adhesion layer 24a, a barrier layer 24b, and a surface layer 24c.
  • the second adhesion layer 24a, the barrier layer 24b, and the surface layer 24c are laminated films arranged in this order along the direction from the submount main body 21 to the base 30.
  • the second adhesion layer 24a is a metal layer having excellent adhesion to the first metal film 23 (specifically, the alteration preventing layer 23c), and is formed of, for example, a 0.1 ⁇ m-thick Ti layer made of Ti. Have been.
  • the barrier layer 24b is a metal layer for preventing the diffusion of Sn, and is composed of, for example, a Pt layer made of Pt having a thickness of 0.2 ⁇ m. By the presence of the barrier layer 24b, the region where the second metal film 24 and the second bonding material 42 are alloyed is limited, and the connection between the submount main body 21 and the base 30 can be ensured.
  • the surface layer 24c is a metal layer that functions as a bonding layer that is alloyed and integrated with the second bonding material 42, and is, for example, an Au layer made of Au having a thickness of 0.5 ⁇ m.
  • a third metal film 25 is disposed on the first main surface 21a of the submount body 21. Specifically, the third metal film 25 is formed on the entire first main surface 21 a of the submount main body 21. In the present embodiment, the third metal film 25 is a part of the submount 20.
  • the third metal film 25 has a third adhesion layer 25a, a barrier layer 25b, and a surface layer 25c.
  • the third adhesion layer 25a, the barrier layer 25b, and the surface layer 25c are laminated films arranged in this order along the direction from the submount body 21 to the semiconductor laser 10.
  • the third adhesion layer 25a is a metal layer having excellent adhesion to the submount body 21, and is made of, for example, a 0.1 ⁇ m thick Ti layer made of Ti.
  • the barrier layer 25b is a metal layer for preventing the diffusion of Sn, and is composed of, for example, a Pt layer made of Pt having a thickness of 0.2 ⁇ m.
  • the surface layer 25c is a metal layer to which a gold wire for supplying power to the semiconductor laser 10 is connected, for example, an Au layer having a thickness of 0.5 ⁇ m and made of Au.
  • the fourth metal film 26 is formed on the surface of the third metal film 25 (specifically, on the surface of the surface layer 25c).
  • the fourth metal film 26 is a metal layer for preventing the first bonding material 41 from spreading and wetting on the third metal film 25.
  • the fourth metal film 26 is formed of a Pt layer having a thickness of 0.3 ⁇ m and made of Pt. Have been.
  • a solder layer made of, for example, AuSn solder having a thickness of 2 to 3 ⁇ m is formed as the first bonding material 41.
  • a solder layer made of, for example, AuSn solder having a thickness of 2 to 3 ⁇ m is formed as the first bonding material 41. Specifically, in the case of FIG.
  • the thickness of the first bonding material 41 between the p-side electrode 16 and the fourth metal film 26 is 2 to 3 ⁇ m, and in the case of FIG.
  • the thickness of the first bonding material 41 between the first metal member 26 and the fourth metal film 26 is 2 to 3 ⁇ m.
  • the submount 20 thus configured is bonded to the base 30 by covering at least a part of the second region R2 with the second bonding material 42.
  • the space between the at least two spacers 22 is substantially buried with the second bonding material 42.
  • the second bonding material 42 is formed on the base 30 so as to extend outside the submount 20 in plan view.
  • the second bonding material 42 covers at least a part of the side surface of the submount 20.
  • the lower limit of the thickness of the second bonding material 42 is determined by the following formula as described above. Specifically, the average thickness of the second bonding material 42 in the second region R2 of the submount 20 is d [m], the temperature change width guaranteed in the semiconductor light emitting device 1 is ⁇ T [K], The coefficient of thermal expansion of the base material (submount body 21) of the mount 20 is ⁇ sub [K ⁇ 1 ], the coefficient of thermal expansion of the base 30 is ⁇ stem [K ⁇ 1 ], and the rigidity of the second bonding material 42 is Is set to Z [GPa], the width of the submount 20 (submount main body 21) is set to W [m], the length of the submount 20 (submount main body 21) is set to L [m], and the second bonding material 42 is set. Satisfying the following (Equation 1) and (Equation 2) when the crack generation critical constant of is expressed as C [GN / m].
  • the average thickness d is such that, in one section including the submount 20 and the base 30 of the semiconductor light emitting device 1, the thickness of the second bonding material 42 in the second region R2 where the spacer 22 is not disposed is 100 ⁇ m or more. Averaged over the length of The surface of the base 30 or the submount 20 is not flat but has irregularities. In particular, the surface on which the submount 20 of the base 30 is mounted has irregularities of about ⁇ 3 ⁇ m. The average value in the range is defined as the thickness of the second bonding material 42.
  • a hard solder having excellent mechanical strength is desirable to use as a material of the second bonding material 42.
  • an Au-based alloy particularly AuSn, AuGe, AuSi, AuSb, or the like can be used.
  • AuSn having a relatively low melting point is more desirable. This is because the thermal strain generated from the solidification of the joining material melted at a high temperature to room temperature can be reduced.
  • the upper limit of the thickness d of the second bonding material 42 is not particularly limited, but is preferably 40 ⁇ m or less.
  • the thermal resistance increases by 1 K / W. This is an increase in thermal resistance sufficient to cause a decrease in laser characteristics.
  • the base 30 is joined to the submount 20 via the second joining material 42.
  • the thermal conductivity of the base 30 is preferably larger than 200 W ⁇ m ⁇ 1 ⁇ K ⁇ 1 .
  • the base 30 is made of copper (Cu).
  • the stem base 31 and the stem post 32 are both made of copper.
  • a metal film 50 is formed on a portion of the base 30 where the submount 20 is joined. Specifically, the metal film 50 is formed on the surface of the stem post 32. In the present embodiment, the metal film 50 has a base layer 50a and a surface layer 50b.
  • the base layer 50a is a metal layer serving as a base of the surface layer 50b, and is made of, for example, a Ni layer made of Ni.
  • the surface layer 50b formed on the base layer 50a is a metal layer that functions as a bonding layer that is alloyed and integrated with the second bonding material 42, and is, for example, an Au layer made of Au.
  • the surface layer 50b can be formed on the surface of the underlayer 50a by, for example, a gold plating method.
  • the submount 20X of the semiconductor light emitting device 1X of the comparative example has the spacer 22 and the second metal film 24 formed on the submount 20 of the semiconductor light emitting device 1 of the present embodiment. There is no configuration.
  • the second bonding material 42 is disposed between the base 30 and the submount 20 ⁇ / b> X to which the semiconductor laser 10 is bonded via the first bonding material 41. Thereafter, the second bonding material 42 is melted by heating with a heater, and the submount 20X is pressed against the base 30. Thereafter, the submount 20X and the base 30 can be joined by the second joining material 42 by cooling. At this time, since the spacer 22 is not provided on the submount 20X, when the second bonding material 42 melts (melts), the second bonding material 42 is crushed by the submount 20X. For this reason, the second bonding material 42 between the submount 20X and the base 30 becomes thin, and it is difficult to form the thick second bonding material 42.
  • the semiconductor laser 10 is mounted on the submount 20. Specifically, the semiconductor laser 10 is disposed on the submount 20 on which the first bonding material 41 is previously disposed, and heated by a heater (not shown) to melt the first bonding material 41. The semiconductor laser 10 and the submount 20 are connected via a first bonding material 41. At this time, the Au layer 19 is preferably formed on the mounting surface of the semiconductor laser 10. Thereby, the Au layer 19 and the first bonding material 41 can be easily integrated and bonded.
  • the submount 20 is arranged on the base 30 via the melted second bonding material 42 so that the second main surface 21b of the submount main body 21 faces the base 30. I do.
  • the second bonding material 42 is arranged between the submount 20 and the base 30, and the second bonding material 42 is heated and melted by a heater, and the submount 20 is pressed against the base 30. .
  • the second bonding material 42 is not crushed in a region where the spacer 22 does not exist. Thereby, the second bonding material 42 having a large thickness can be easily formed.
  • the semiconductor light emitting device 1 can be manufactured.
  • the thickness of the second bonding material 42 can be controlled to a desired thickness by the spacer 22 provided on the submount 20.
  • the semiconductor light emitting device 1 includes the base 30, the submount 20 positioned on the base 30, and the semiconductor laser 10 positioned on the submount 20.
  • the laser 10 and the submount 20 are joined by a first joining material 41
  • the base 30 and the submount 20 are joined by a second joining material 42
  • a spacer 22 is provided on the submount 20 side of the base 30.
  • a second region R2 where the spacer 22 is not disposed. At least a part of the second region R2 is formed of the second bonding material 42. It is joined to the base 30 by being covered.
  • the thickness of the second bonding material 42 between the submount 20 and the base 30 can be controlled to a desired thickness by the spacer 22, so that sufficient strength against thermal strain due to a temperature cycle is obtained.
  • the thickness of the second bonding material 42 that can ensure the thickness can be realized with high accuracy.
  • the space between the submount 20 and the base 30 can be easily filled with no gap by the second bonding material 42. Therefore, it is possible to realize the semiconductor light emitting device 1 having a sufficient strength against the thermal strain caused by the temperature cycle while suppressing the increase in the thermal resistance.
  • the average thickness of the second bonding material 42 in the second region R2 of the submount 20 is d [m]
  • the temperature change guaranteed in the semiconductor light emitting device 1 is
  • the width is ⁇ T [K]
  • the coefficient of thermal expansion of the base material of the submount 20 is ⁇ sub [K ⁇ 1 ]
  • the coefficient of thermal expansion of the base 30 is ⁇ stem [K ⁇ 1 ]
  • the second bonding material 42 is Is defined as Z [GPa]
  • the width of the submount 20 is defined as W [m]
  • the length of the submount 20 is defined as L [m]
  • the crack generation critical constant of the second bonding material 42 is defined as C [GN / M] the following (Equation 1) and (Equation 2) are satisfied.
  • the second bonding material 42 is made of AuSn.
  • the crack generation critical constant when the material of the second bonding material 42 is limited to AuSn is D [m]
  • the following (Equation 3) and (Equation 4) are satisfied.
  • the submount 20 has the submount body 21, and the spacer 22 is provided on the submount body 21.
  • the spacer 22 can be easily arranged.
  • a plurality of spacers 22 are provided.
  • the degree of parallelism between the surface of the submount 20 and the surface of the base 30 can be increased, and the inclination of the submount 20 with respect to the base 30 can be reduced. Further, variation in the thickness of the second bonding material 42 can be suppressed.
  • the space between at least two spacers 22 is substantially buried with the second bonding material 42.
  • the heat radiation area from the submount 20 to the base 30 can be increased. That is, a portion embedded with the second bonding material 42 between two adjacent spacers 22 can function as a heat radiation path. Thereby, the thermal resistance between the submount 20 and the base 30 can be reduced. In addition, by being buried with the second bonding material 42 between two adjacent spacers 22, the bonding strength between the submount 20 and the base 30 can be increased.
  • the plurality of spacers 22 are two-dimensionally dispersed.
  • the distance D1 between two adjacent spacers 22 is 100 ⁇ m or more.
  • the submount body 21 is a rectangular parallelepiped, and at least four spacers 22 are provided. Each of the four spacers 22 is It is located near four corners.
  • the parallelism between the surface of the submount 20 and the surface of the base 30 can be increased, and the inclination of the submount 20 with respect to the base 30 can be reduced. Further, the variation in the thickness of the second bonding material 42 can be suppressed.
  • the spacer 22 is not arranged on the second main surface 21b (the surface on the side of the base 30) of the submount main body 21.
  • the spacer 22 can be formed in the second main surface 21b of the submount main body 21, so that the spacer 22 is not damaged in the process of manufacturing the submount 20 (the step of dividing the submount 20). Can be suppressed.
  • the side surface of the spacer 22 is separated from the side surface of the submount body 21.
  • the submount 20 can be easily cut out without damaging the spacer 22 in the process of manufacturing the submount 20.
  • the spacer 22 can be easily formed in the second main surface 21b of the submount body 21.
  • the distance D2 between the side surface of the spacer 22 and the side surface of the submount body 21 is preferably 50 ⁇ m or more.
  • the spacer 22 can be more reliably formed in the second main surface 21b of the submount main body 21 in the process of manufacturing the submount 20.
  • the thickness of the central portion of the spacer 22 is preferably larger than the thickness of the peripheral portion of the spacer 22.
  • the spacer 22 includes the first surface S10 facing the second main surface 21b of the submount main body 21, and the first surface S10 opposite to the first surface S10.
  • a second surface S20 and a third 30S that is a side surface between the first surface S10 and the second surface S20.
  • the second surface S20 and the third surface S30 may be connected by the first curved surface C1.
  • the change in the thickness of the spacer 22 and the thickness of the second bonding material 42 at the end portion of the spacer 22 can be moderated.
  • the third surface S30 may have a curved surface.
  • the third surface S30 has at least a first side surface S31 and a second side surface S32, and the first side surface S31 and the second side surface S32 are connected by a second curved surface C2. .
  • the radius of curvature of the second curved surface C2 is preferably 25 ⁇ m or more.
  • the minimum width D3 of the spacer 22 is preferably 50 ⁇ m or more.
  • the diameter of the spacer 22 is preferably 50 ⁇ m or more.
  • the first metal film 23 is disposed between the spacer 22 in the first region R1 and the second main surface 21b of the submount body 21. .
  • the first metal film 23 is also arranged in the second region R2.
  • the first metal film 23 has the first adhesion layer 23a and the deterioration preventing layer 23c, and the first adhesion layer 23a and the deterioration preventing layer 23c Are arranged in this order from the submount body 21 to the spacer 22.
  • the mechanical strength at the connection between the submount main body 21 and the spacer 22 can be increased. Further, by forming the alteration preventing layer 23c, it is possible to prevent a cavity from being generated in the spacer 22 or a foreign substance from being mixed in the process of forming the spacer 22.
  • the second metal film 24 is disposed on the second surface S20 of the spacer 22.
  • the spacer 22 can be easily joined to the base 30 by the second joining material 42.
  • the second metal film 24 is also arranged on the third surface S30 of the spacer 22.
  • the third surface S30 (side surface) of the spacer 22 and the base 30 are easily bonded via the second bonding material 42. Thereby, the submount 20 and the base 30 can be easily connected.
  • the second metal film 24 is also arranged in the second region R2 where the spacer 22 is not arranged.
  • the submount 20 and the base 30 can be easily connected via the second bonding material 42 even in the second region R2 where the spacer 22 does not exist.
  • the main component of the spacer 22 is a metal selected from Cu, Al, Au, and Ag, or at least one of Cu, Al, Au, and Ag.
  • the heat dissipation path extends not only to the second region R2 where the spacer 22 is not disposed (that is, the region where the second bonding material 42 exists) but also to the first region R1 where the spacer 22 is disposed. Can be enlarged. Thereby, the thermal resistance between the submount 20 and the base 30 can be further reduced.
  • the second bonding material 42 is formed on the base 30 so as to extend to the outside of the submount 20 in plan view.
  • the second bonding material 42 covers at least a part of the side surface of the submount 20.
  • a part of the side surface of the submount 20 can also be used as a heat radiation path, and the bonding area between the submount 20 and the base 30 can be increased. Thereby, the thermal resistance between the submount 20 and the base 30 can be further reduced.
  • the thickness of the first bonding material 41 is smaller than the thickness of the second bonding material 42.
  • the semiconductor laser 10 having a small difference in thermal expansion coefficient and the submount 20 (submount body 21) are joined by the thin first joining material 41, so that the thermal resistance between the semiconductor laser 10 and the submount 20 is reduced.
  • the thickness of the submount 20 and the base 30 having a large difference in thermal expansion coefficient are joined by the thick second joining material 42 while suppressing the occurrence of cracks in the second joining material 42 due to the temperature cycle. Can be. That is, compatibility between temperature cycle resistance and low thermal resistance can be achieved.
  • the area of the surface of the submount 20 on the side of the base 30 is 0.6 mm 2 or more.
  • the area of the second main surface 21b of the submount main body 21 is 0.6 mm 2 or more.
  • the decrease in the light output at the operating current If after the temperature cycle test in which the temperature cycle between 125 ° C. and ⁇ 40 ° C. is repeated 1000 times is the same as before the temperature cycle test.
  • the light output is preferably 20% or less of the operating current If.
  • the semiconductor light emitting device 1 according to the present embodiment can be used as a vehicle light source such as a vehicle-mounted headlamp.
  • the thermal conductivity of the base material of the submount 20 is 130 W ⁇ m ⁇ 1 ⁇ K ⁇ 1 or more.
  • the thermal resistance of the semiconductor light emitting device 1 can be further reduced.
  • the base material of the submount 20 has a coefficient of thermal expansion of 5 ⁇ 10 ⁇ 6 K ⁇ 1 or less.
  • the thermal conductivity of the base 30 may be larger than 200 W ⁇ m ⁇ 1 ⁇ K ⁇ 1 .
  • the thermal resistance of the semiconductor light emitting device 1 can be further reduced.
  • the difference between the base material of the submount 20 and the coefficient of thermal expansion of the base 30 is larger than 11 ⁇ 10 ⁇ 6 K ⁇ 1 .
  • the semiconductor laser 10 operates in a state where the difference between the power consumption and the light output is 3 W or more.
  • the thickness of the spacer 22 be larger than the depth of the recesses.
  • semiconductor laser 10 (laser chip) is mounted on first main surface 21a side of submount 20.
  • the second main surface 21b (back surface) side of the submount 20 is heated by a heater for heating, so that the first main surface 21a side of the submount 20 is heated.
  • the first bonding material 41 AuSn solder formed beforehand is melted, and then the semiconductor laser 10 is mounted on the submount 20, and the semiconductor laser 10 is first mounted on the submount 20 via the bonding material 41. Is joined to.
  • the present inventors have examined the influence of the spacer 22 provided on the second main surface 21b side on the AuSn solder formed on the first main surface 21a side for the submount 20 having the spacer 22. . Specifically, when the thickness (height) H of the spacer 22 of the submount 20 is 5 ⁇ m, 10 ⁇ m, and 15 ⁇ m, when the area of the spacer 22 is changed, it is formed on the first main surface 21 a side. The heater temperature of the heating heater when the AuSn solder melted was measured. FIG. 18 shows the result.
  • the vertical axis represents the heater temperature T heat [° C.] of the heating heater when the AuSn solder is melted
  • the horizontal axis represents the total area S spacer of the spacer 22 with respect to the area S sub of the submount 20 .
  • the area ratio ( Sspacer / Ssub ) is used.
  • the area Ssub of the submount 20 is the area of the entire submount 20 when the submount 20 is projected from the second main surface 21b (back surface) side.
  • the total area S spacer of the spacer 22 is the total area of all the spacers 22 when only the spacer 22 is projected from the second main surface 21b (back surface) side.
  • the total area S area of spacer ratio of the spacer 22 to the area S sub of the sub-mount 20 area of each spacer 22 is then reduced such (S spacer / S sub) is smaller, the heater
  • the heater temperature required to melt the AuSn solder formed on the opposite side increases.
  • the heater temperature required to melt the AuSn solder increases significantly.
  • the first bonding material 41 (AuSn) formed on the first main surface 21a opposite to the second main surface 21b on which the heating heater is arranged is provided. From the viewpoint of melting the solder efficiently, it is preferable that the thickness of the spacer 22 is as small as possible and the total area of the spacer 22 is as large as possible.
  • the heater temperature required to melt the AuSn solder formed on the side opposite to the heater side for heating was 275 ° C.
  • the practical heater temperature should be limited to about 30 ° C. with respect to 275 ° C., that is, up to 305 ° C.
  • the heater temperature when the AuSn solder formed on the side opposite to the heating heater side is melted is in the range of 305 ° C. or less.
  • the area Ssub of the mount 20, the total area Sspacer of the spacer 22, and the thickness H of the spacer 22 may be set.
  • the points plotted by ⁇ indicate that the laser characteristics did not deteriorate after 1,000 times of the temperature cycle test, and the points plotted by ⁇ indicate the points of 1,000 times.
  • Each of the graphs shows a case in which the laser characteristics are deteriorated after the temperature cycle test.
  • the thickness H of the spacer 22 is as large as possible from the viewpoint of suppressing the deterioration of the laser characteristics of the semiconductor laser 10, and the total area S spacer of the spacer 22 is It can be seen that it is better to make as small as possible.
  • the thickness H of the spacer 22 is as small as possible from the viewpoint of efficiently melting the first bonding material 41 (AuSn solder).
  • the thickness H of the spacer 22 is as large as possible, and the total area of the spacer 22 is preferably large . It is better to make S spacer as small as possible.
  • a curve between the curves C1 and C2 shown in FIG. as the range may be set to the size of the thickness H of the total area S location spacer and the spacer 22 in the area of the submount 20 S sub and the spacer 22.
  • the region above the curve C1 is a range in which the AuAn solder can be easily melted when the AuSn solder is melted in the chip / submount mounting process.
  • a region below the curve C2 is a range in which deterioration of the laser characteristics of the conductor laser 10 can be suppressed.
  • FIG. 20 is a cross-sectional view showing a configuration of a semiconductor light emitting device 1A according to a modification of the first embodiment.
  • FIG. 21 is a bottom view of the submount 20A in the semiconductor light emitting device 1A.
  • the semiconductor laser 10 is disposed on the opposite side (the first main surface 21a side) from the bottom surface side (the second main surface 21b side) where the spacers 22 are disposed, and in FIG. Along with the arrangement, the position of the semiconductor laser 10 arranged across the submount body 21 is shown.
  • At least one of the plurality of spacers 22 of the submount 20A overlaps the semiconductor laser 10.
  • a total of six spacers 22 are provided, two in the vertical direction and three in the horizontal direction. Then, as shown in FIG. 21, when the submount 20 is viewed from the normal direction of the second main surface 21 b of the submount body 21, the middle spacer 22 in the lateral direction overlaps with the semiconductor laser 10.
  • the semiconductor laser 10 which is a heat source, and the spacer 22 are moved between the first main surface 21 a and the second main surface 21 b of the submount main body 21. At the shortest distance.
  • the semiconductor light emitting device 1A according to the present modification can lower the thermal resistance as compared with the semiconductor light emitting device 1 according to the first embodiment.
  • the number of the spacers 22 is not limited to six.
  • a total of six spacers 22, three in the vertical direction and three in the horizontal direction may be provided as in a submount 20B shown in FIG. 22, or as in a submount 20C shown in FIG.
  • four horizontally long spacers 22 may be provided side by side in the longitudinal direction (vertical direction), or only one large-area rectangular spacer 22 is provided like a submount 20D shown in FIG.
  • a total of 24 small-area rectangular spacers 22 may be provided, six in the vertical direction and four in the horizontal direction.
  • FIG. 26 is a sectional view showing a configuration of the semiconductor light emitting device 2 according to the second embodiment.
  • the semiconductor light emitting device 2 according to the present embodiment is different from the semiconductor light emitting device 1 according to the first embodiment in the configuration of the submount 20X and the thickness of the surface layer 50b in the metal film 50.
  • the submount 20X according to the present embodiment has a structure in which the spacer 22 and the second metal film 24 are not provided in the submount 20 according to the first embodiment. Further, the thickness of the surface layer 50b in the metal film 50 is 1 ⁇ m or more.
  • the surface layer 50b is a surface layer of the metal film 50, and is a gold layer made of only gold or a layer containing gold.
  • the inventors of the present application have conducted experiments to increase the thickness of the second bonding material 42 by increasing the thickness of the surface layer 50 b formed on the outermost surface of the base 30 without providing the spacer 22 on the submount 20. I found that I could control it. Hereinafter, the experiment will be described.
  • FIG. 27 is a cross-sectional SEM image showing the results of the experiment.
  • FIG. 28 is a diagram showing the relationship between the thickness of the surface layer 50b (Au layer) obtained by this experiment and the thickness of the second bonding material 42 (finished solder thickness).
  • the surface layer 50b made of an Au layer was formed by a gold plating method.
  • the thickness of the second bonding material 42 (the thickness of the finished solder) can be increased by increasing the thickness of the surface layer 50b (Au layer). That is, it was found that the thickness of the second bonding material 42 can be controlled by controlling the thickness of the surface layer 50b. In this case, by setting the thickness of the surface layer 50b to 1 ⁇ m or more, the thickness of the second bonding material 42 can be set to about 3.5 ⁇ m or more.
  • the thickness of the second bonding material 42 is controlled to be an appropriate value by providing the submount 20 with the spacer 22.
  • the thickness of the second bonding material 42 is controlled by controlling the thickness of the surface layer 50b formed on the outermost surface of the base 30.
  • the thickness of the second bonding material 42 can be controlled to be thicker by the thickness of the surface layer 50b. A description will be given below.
  • the second bonding material 42 is disposed on the surface of the base 30 (specifically, the surface of the surface layer 50b). At this time, before the submount 20X on which the semiconductor laser 10 is mounted is mounted on the base 30 (before heating), the area of the surface layer 50b is larger than the area of the second bonding material 42.
  • the submount 20X is pressed against the second bonding material 42 while heating is further continued.
  • a place where the second bonding material 42 escapes laterally is required. Since the second bonding material 42 is not diffused and is in a solid (Au) state, the second bonding material 42 does not spread in the lateral direction.
  • the surface layer 50b is maintained in a constant thickness without being crushed by the submount 20X. That is, the thickness of the second bonding material 42 can be increased by the thickness of the surface layer 50b.
  • the semiconductor light emitting device 2 includes the base 30, the submount 20X positioned on the base 30, and the semiconductor laser 10 positioned on the submount 20X.
  • the submount 20 and the submount 20 are joined by a first joining material 41, and the base 30 and the submount 20X are joined by a second joining material 42.
  • a surface layer 50b is formed as a gold layer or a layer containing gold with a thickness of 1 ⁇ m or more. The effect of the present disclosure is greater as long as the semiconductor laser 10 operates in a state where the difference between the power consumption and the optical output is 3 W or more.
  • the average thickness of the second bonding material 42 is set to d [m], and is guaranteed in the semiconductor light emitting device 2.
  • ⁇ T [K] the thermal expansion coefficient of the base material (submount body 21) of the submount 20X is ⁇ sub [K ⁇ 1 ], and the thermal expansion coefficient of the base 30 is ⁇ stem [K ⁇ 1].
  • the rigidity of the second bonding material 42 is Z [GPa]
  • the width of the submount 20X is W [m]
  • the length of the submount 20X is L [m]
  • the second bonding material 42 is Satisfying the following (Equation 1) and (Equation 2) when the crack generation critical constant of is expressed as C [GN / m].
  • the spacer 22 is not provided on the submount 20X, and the surface of the submount 20X on the side of the base 30 is flat. Thereby, the space between the submount 20X and the base 30 can be easily filled with the second bonding material 42 without any gap. Therefore, it is possible to realize the semiconductor light emitting device 2 having a sufficient strength against thermal strain accompanying a temperature cycle while suppressing an increase in thermal resistance.
  • the semiconductor light emitting device according to the present disclosure has been described based on the first and second embodiments, but the present disclosure is not limited to the first and second embodiments.
  • the spacer 22 is provided on the submount 20, and in the second embodiment, the increase in the thermal resistance is suppressed by increasing the thickness of the outermost surface layer 50b of the base 30.
  • a semiconductor light emitting device having sufficient strength against thermal strain caused by temperature cycling specifically, a semiconductor light emitting device capable of meeting the reliability test standard AEC-Q102 for automobile parts has been realized. Not limited to
  • the temperature cycle test in which the temperature cycle between 125 ° C. and ⁇ 40 ° C. is repeated 1000 times using the semiconductor laser 10 operating in a state where the difference between the power consumption and the optical output is 3 W or more.
  • the decrease in the optical output at the operating current If is not more than 20% of the optical output at the operating current If before the temperature cycle test, the area of the second main surface 21b of the submount body 21 is 0.6 mm 2 or more,
  • the thickness of the bonding material 41 may be smaller than 3 ⁇ m to satisfy the following (Equation 1) and (Equation 2).
  • the semiconductor light emitting devices according to the first and second embodiments have the base 30, the semiconductor light emitting device need not have the base 30.
  • the semiconductor light emitting device includes a submount 20 having a first main surface 21a and a second main surface 21b, and the semiconductor light emitting element 10 located on the first main surface 21a side of the submount 20. You may.
  • the semiconductor light emitting element 10 and the submount 20 are joined by the first joining material 42, and the first region R ⁇ b> 1 where the spacer 22 is arranged is provided on the second main surface 21 a side of the submount 20. And a second region R2 where the spacer 22 is not disposed.
  • the base 30 and the submount 20 can be joined by the method described in the first embodiment without requiring special consideration.
  • the semiconductor light emitting device can be used as a light source for products in various fields such as an optical disc, a display, a headlight for a vehicle, a lighting device, and a laser processing device. It is useful as a light source for parts for use.

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